Semiconductor laser module and preparation method thereof

Abstract

The invention provides a semiconductor laser module and a preparation method thereof. The semiconductor laser module comprises a plurality of rows of chips and an optical shaping assembly. The optical shaping assembly comprises a space beam combining part, and the space beam combining part comprises a plurality of transmission beam combining parts. Each transmission beam combining part is used for forming light beams emitted by the corresponding row of chips into transmission light beams, so that the coupling loss is reduced, and the photoelectric efficiency is improved; the semiconductor laser module can be used for combining multiple rows of light beams, and the manufacturing cost of the transmission beam combining component is low.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor, in particular to a semiconductor laser module and a preparation method thereof. BACKGROUND

[0002] High-power semiconductor lasers have a large number of applications in material processing, pumping solid-state lasers and other aspects. Most of the existing high-power semiconductor lasers use polarization beam combining method when realizing multi-channel laser fiber coupling, and the spatial beam combining method mostly uses single-row arrangement or double-row arrangement.

[0003] Polarization beam combining causes the decline of photoelectric efficiency due to the polarization degree of the chip and the coupling loss of the polarization transmission beam combining component, and can only be used for the beam combining of two rows of beams, and the cost is also high. SUMMARY

[0004] The purpose of the present application is to provide a semiconductor laser module and a preparation method thereof, which includes a plurality of chips arranged densely, the spatial beam combining method used is more efficient, the coupling efficiency is higher, the beam combining of multiple rows of beams is supported, and the cost is lower.

[0005] In one aspect, the present application provides a semiconductor laser module, comprising: a plurality of rows of chips and an optical shaping assembly; The plurality of rows of chips are arranged at intervals along a first direction, and each row of chips comprises a plurality of the chips; Each row of chips is arranged at intervals in a second direction and is arranged in a stepped manner in a third direction; the chips of different rows are arranged staggered in an output direction; the third direction is perpendicular to a plane formed by the first direction and the second direction; in the plane formed by the first direction and the second direction, the output direction is perpendicular to the second direction; The optical shaping assembly comprises a spatial beam combining component; the spatial beam combining component comprises a plurality of transmission beam combining components; each transmission beam combining component forms a transmission beam from the light beams emitted by a row of chips arranged correspondingly thereto; the light beams emitted by the plurality of rows of chips are combined in the second direction.

[0006] In one embodiment, the plurality of chips are arranged at intervals along the output direction in m rows, and each row comprises n chips; Each transmission beam combining component comprises n transmission grating light guide plates; the light beams emitted by the n chips in each row form transmission beams through the n transmission grating light guide plates respectively; the transmission beams formed by the m rows of chips are combined in the second direction.

[0007] In one embodiment, m is a positive integer greater than 2, and n is a positive integer; the spatial beam combining component comprises (m-1) transmission beam combining components; When m is odd, the light emitted by the (m+1) / 2th row of the chips is emitted directly without passing through any of the transmission beam combining components; the light emitted by each of the remaining m-1 rows of the chips passes through one of the m-1 transmission beam combining components to form a transmission light beam; the light emitted by the (m+1) / 2th row of the chips and the m-1 transmission light beams are all combined at the direction of the light emitted by the (m+1) / 2th row of the chips. When m is even, the light emitted by the m / 2th row of the chips is emitted directly without passing through any of the transmission beam combining components; the light emitted by each of the remaining m-1 rows of the chips passes through one of the m-1 transmission beam combining components to form a transmission light beam; the light emitted by the m / 2th row of the chips and the m-1 transmission light beams are all combined at the direction of the light emitted by the m / 2th row of the chips, or the light emitted by the m / 2+1th row of the chips and the m-1 transmission light beams are all combined at the direction of the light emitted by the m / 2+1th row of the chips.

[0008] In one embodiment, m is a positive integer greater than 1, and n is a positive integer; the spatial beam combining component comprises m transmission beam combining components; When m is odd, the light emitted by each of the m rows of the chips passes through one of the m transmission beam combining components to form a transmission light beam; the m transmission light beams are all combined at the position of the (m+1) / 2th row of the chips. When m is even, the light emitted by each of the m rows of the chips passes through one of the m transmission beam combining components to form a transmission light beam; the m transmission light beams are all combined at the position between the m / 2th row and the m / 2+1th row.

[0009] In one embodiment, the optical shaping assembly comprises, in sequence along the propagation path of the chip light, a collimating lens, a first mirror, and a focusing lens, and the spatial beam combining component is disposed between the first mirror and the focusing lens. The number of collimating lenses and the number of first mirrors are equal to the number of chips; the first mirror is configured to reflect the collimated light beams emitted by the chips to the transmission beam combining components. Each of the transmission beam combining components comprises a plurality of transmission grating light guide plates stacked and spaced apart along the third direction, one of the transmission grating light guide plates being configured to transmit the collimated light beam reflected by one of the first mirrors; the plurality of transmission beam combining components are configured to transmit and combine the plurality of collimated light beams in the third direction to form a collimated combined light.

[0010] In an embodiment, the distance between the chip in the ith preset position and the chip in the (i+1)th preset position is D1, i is a positive integer, i+1≤m; the angle between the length direction of the transmission beam combining component and the first direction is , the length of the transmission beam combining component is L3, and the following is satisfied: .

[0011] In an embodiment, the number of the transmission grating light guide plates is equal to the number of the chips in the corresponding row; the collimating lens comprises a fast-axis collimating lens and a slow-axis collimating lens. The air gap between two adjacent transmission grating light guide plates in the transmission beam combining component along the third direction is d1, the focal length of the fast-axis collimating lens is f2, the fast-axis divergence half-angle of the chip is θ2, the step height difference between two adjacent chips along the first direction is H1, and the height of the transmission beam combining component extending along the third direction is h1, and the following is satisfied: 2*f2*tanθ2≤d1≤m*H1-2*(m-1)*f2*tanθ2; 2*f2*tanθ2≤h1≤(m*H1-2*f2*tanθ2) / (m-1).

[0012] In an embodiment, the width of the slow-axis collimating lens is w1, and the length of the first mirror is L2, and the following is satisfied: .

[0013] In an embodiment, the distance between two adjacent chips in the same row is L1, the slow-axis divergence half-angle of the chip is θ1, the width of the chip is w0, and the focal length of the slow-axis collimating lens is f1, and the following is satisfied: 2tanθ1*f1≤w1≤(L1-w0) / (m-1); f1≥2*D1.

[0014] In an embodiment, further comprising: an optical fiber arranged on the light output side of the optical shaping assembly, the light beam output from the optical shaping assembly being a shaped light beam; and the optical fiber is arranged horizontally with the shaped light beam.

[0015] In an embodiment, further comprising: an upper housing and a lower housing, a plurality of the chips and the optical shaping assembly are arranged on the surface of the lower housing, and the optical fiber penetrates through the side wall of the lower housing.

[0016] Another aspect of the present application provides a preparation method of a semiconductor laser module, comprising: S1, providing a lower shell and fixedly placing a plurality of chips in the lower shell; the plurality of chips are arranged in multiple rows in a first direction, each row comprising a plurality of chips; the chips in each row are arranged in a second direction and are arranged in a stepped manner in a third direction; the chips in different rows are staggered in an emission direction; the third direction is perpendicular to the plane formed by the first direction and the second direction; in the plane formed by the first direction and the second direction, the emission direction is perpendicular to the second direction; S2, fixedly placing an optical shaping assembly and an optical fiber in the lower shell; the optical shaping assembly comprises: a collimating lens, a first mirror, a spatial beam combining component and a focusing lens arranged in sequence on the propagation path of the chip light; the optical fiber penetrates the side wall of the lower shell; the spatial beam combining component comprises a plurality of transmission beam combining components; each transmission beam combining component forms a transmission light beam from the light beam emitted by the corresponding arranged row of chips; the light beams emitted by the multiple rows of chips are combined in the second direction and transmitted through the optical fiber.

[0017] In one embodiment, the step of fixedly placing the optical shaping assembly and the optical fiber comprises: S21, curing the collimating lens and the optical fiber; S22, placing the first mirror at a first preset position; S23, curing the focusing lens; S24, adjusting and curing the transmission beam combining component, wherein the step of curing one transmission beam combining component comprises: S2401, providing a transmission grid light guide plate and placing it at a second preset position, and arranging a turning prism behind the transmission grid light guide plate, the left and right positions of the turning prism being aligned with the center of the optical fiber; S2402, the light beam emitted by single row of chips is reflected to the transmission grid light guide plate through the first mirror, and then exits into the turning prism; whether the light exiting from the turning prism is complete is observed and confirmed; if the light spot is not complete, the position and angle of the transmission grid light guide plate need to be adjusted; S2403, after the position and angle of the transmission grid light guide plate are adjusted, the turning prism is removed, and the light beam emitted by single row of chips after being powered on passes through the focusing lens and is focused into the optical fiber through the transmission grid light guide plate, and then exits from the optical fiber to a power meter; whether the power value of the power meter reaches a standard power value is observed and judged; if the standard power value is not reached, the position and angle of the transmission grid light guide plate are fine-tuned until the power value of the optical fiber reaches a maximum power value; S2404, according to the steps of S2401-S2403, the position and angle of each of the chips in the row of the transmission grating light guide plate corresponding to the chip are determined, and the position and angle of one of the transmission grating light guide plates in one of the transmission beam combining components are determined, and so on, starting from the bottom piece, one layer after another is stacked and coupled to the top piece of the transmission grating light guide plate; the side of the plurality of transmission grating light guide plates is vertically solidified with a glass piece, and the plurality of transmission grating light guide plates are fixed on the glass piece to complete the solidification of one of the transmission beam combining components.

[0018] The present application has at least the following advantages or benefits: 1. The semiconductor laser module is applied to laser space beam combining, a plurality of rows of chips are arranged at intervals along a first direction, each row of chips is arranged at intervals in a second direction and is arranged in a stepped manner in a third direction, and the chips in different rows are arranged staggered in an output direction. The transmission beam combining component forms a transmission beam from the light beams emitted by the row of chips arranged correspondingly thereto. The light beams emitted by the plurality of rows of chips are combined in the second direction. The inclination angle and specific structural size of the transmission beam combining component can be flexibly adjusted. All or part of the light beams emitted by the plurality of rows of chips pass through the transmission beam combining component for spot arrangement, are combined in the second direction, and then pass through a focusing mirror to be coupled into an optical fiber. In this embodiment, the optical shaping assembly of the semiconductor laser module includes a space beam combining component, and the space beam combining component includes a plurality of transmission beam combining components. Each transmission beam combining component is used to form a transmission beam from the light beams emitted by the row of chips arranged correspondingly thereto, so as to reduce coupling loss and improve photoelectric efficiency; and the semiconductor laser module can be used for beam combining of a plurality of rows of light beams, and the manufacturing cost of the transmission beam combining component is relatively low.

[0019] 2. The semiconductor laser module provided by the present application mainly has the following advantages: 1) from the coupling effect, the integration of a plurality of rows of chips can be realized, the optical path is shortened, and the problem of large optical path difference between the farthest chip and the nearest chip due to too many chips arranged in each row is solved. The longer the optical path of the farthest chip, the lower the output light brightness, and the high temperature is easy to be generated in the fusion of the output optical fiber. The semiconductor laser module provided by the present application has higher output light brightness and better beam quality when the light is coupled into the optical fiber. 2) from the cost point of view, the multi-row chip beam combining does not need polarization beam combining, and the cost of the transmission film and the reflection film is lower, and the coupling efficiency is higher than that of polarization beam combining. The plurality of chips are arranged compactly, and the cost of the copper heat sink is reduced. 3) from the heat dissipation point of view, the chips are arranged alternately and staggered, the distance between adjacent chips is far, the heat dissipation space is larger, and the heat dissipation effect is better.

[0020] 3. Each transmission grating light guide plate processes the light beams emitted by the corresponding single chip independently. n independent transmission grating light guide plates can perform parallel and non-interfering precise shaping on n light beams. For example, each transmission grating light guide plate can also be built-in with micro-optical structures to collimate, expand, and correct astigmatism of the light beams, etc., to lay a solid foundation for subsequent high-quality beam combining.

[0021] 4. In a single-row chip, the optical axes of the n transmission grating light guide plates on the same transmission beam combining component can be accurately aligned with each other through precise mechanical adjustment, so that the n light beams output by them achieve high parallelism and pointing consistency, which is equivalent to completing the beam parallelization in the "one-dimensional" direction first. Beam combining between multiple rows of chips: when the light beams output by each row of chips have become highly parallel beam arrays through the corresponding beam combining components, only a simple angle deflection is needed to make the m parallel beam arrays precisely overlap and converge in the second direction, realizing spatial beam combining. BRIEF DESCRIPTION OF DRAWINGS

[0022] In order to more clearly illustrate the technical solutions in the specific embodiments or prior art of the present application, the drawings needed in the description of the specific embodiments or prior art will be briefly introduced. Obviously, the drawings in the following description are some embodiments of the present application, and other drawings can also be obtained by those skilled in the art without creative labor.

[0023] Figure 1 A schematic diagram of a semiconductor laser module provided by the prior art; Figure 2 A perspective view of a semiconductor laser module provided by an embodiment of the present application; Figure 3 A top view of a semiconductor laser module provided by an embodiment of the present application; Figure 4 A light propagation schematic diagram of a semiconductor laser module provided by an embodiment of the present application; Figure 5 A light propagation schematic diagram of a semiconductor laser module provided by another embodiment of the present application; Figure 6 A structural schematic diagram of a transmission beam combining component in a semiconductor laser module provided by an embodiment of the present application; Figure 7 A light spot arrangement schematic diagram of a semiconductor laser module provided by an embodiment of the present application.

[0024] Semiconductor laser module 100: lower housing 101; Chip 10, optical shaping assembly 20, optical fiber 30; Collimating lens 21: fast-axis collimating lens 21a, slow-axis collimating lens 21b, first mirror 22, spatial beam combining component 23, transmissive beam combining component 231, transmissive grating light guide 231a, anti-reflection sheet 24, focusing lens 25, first focusing lens 25a, second focusing lens 25b. DETAILED DESCRIPTION

[0025] To make the objectives, technical solutions, and advantages of the embodiments of the present application clearer, the following will be a clear and complete description of the technical solutions in the embodiments of the present application in conjunction with the accompanying drawings of the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, rather than all the embodiments. The components of the embodiments of the present application described and shown in the accompanying drawings can be arranged and designed in various different configurations.

[0026] Therefore, the following detailed description of the embodiments of the present application provided in the accompanying drawings is not intended to limit the scope of the claimed present application, but only represents selected embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without making creative efforts fall within the scope of protection of the present application.

[0027] It should be noted that: similar reference numbers and letters represent similar items in the following drawings, therefore, once an item is defined in one drawing, it does not need to be further defined and explained in subsequent drawings.

[0028] As Figure 1 shown in the prior art multi-laser fiber 30 coupling, the polarization beam combining method is generally two rows of light paths against each other, coupled to a fiber 30. And the semiconductor laser module 100 provided by the present application mainly has the following advantages: Figures 2-5 1) from the coupling effect, the integration of multiple rows of chips 10 can be realized, the optical path is shortened, and the problem of large optical path difference between the farthest chip 10 and the nearest chip 10 caused by too many chips 10 arranged in each row is solved. The longer the optical path of the farthest chip 10, the lower the output light brightness, and the high temperature problem of the output fiber 30 fusion is easy to produce. The coupling of the semiconductor laser module 100 provided by the following embodiments of the present application and Figures 2-5 the exit light brightness of the semiconductor laser module 100 coupled into the fiber 30 is higher, and the beam quality is better (as Figure 7The figure is a spot arrangement schematic diagram of the semiconductor laser module 100 provided by one embodiment of the application. It can be seen from the figure that the spot arrangement is neat, the light brightness is high, and the beam quality is good. 2) From the cost point of view, the multi-row chip 10 beam combination does not need polarization beam combination, and the cost of the transmission film and the reflection film is lower. At the same time, the coupling efficiency is higher than that of the polarization beam combination. The multiple chips 10 are arranged more compactly, thereby reducing the cost of the copper heat sink. 3) From the heat dissipation point of view, the chips 10 are arranged alternately and staggered, the distance between the adjacent chips 10 is far, the heat dissipation space is larger, and the heat dissipation effect is better.

[0029] Please refer to Figure 2 and Figure 3 , the application provides a semiconductor laser module 100, comprising: multiple rows of chips 10 and an optical shaping assembly 20. The multiple rows of chips 10 are arranged at intervals along a first direction, and each row of chips 10 comprises multiple chips 10. As Figure 2 , three rows of chips 10 are shown, and each row comprises seven chips 10.

[0030] Each row of chips 10 is arranged at intervals in a second direction and in a stepped arrangement in a third direction. The chips 10 in different rows are arranged staggered in an out-light direction. The third direction is perpendicular to the plane formed by the first direction and the second direction. The third direction is the height direction of the chip 10, that is, the fast axis direction of the chip 10. In the plane formed by the first direction and the second direction, the out-light direction is perpendicular to the second direction. The second direction is the slow axis direction of the chip 10, and the third direction is the fast axis direction of the chip 10. The angle between the first direction and the second direction is less than or equal to 90°. When the angle between the first direction and the second direction is 90°, the first direction is the same as the out-light direction.

[0031] The optical shaping assembly 20 comprises a spatial beam combination component 23. The spatial beam combination component 23 comprises multiple transmission beam combination components 231. The transmission beam combination component 231 forms a transmission beam from the light beams emitted by the row of chips 10 corresponding to the transmission beam combination component 231. Specifically, one transmission beam combination component 231 is corresponding to one row of chips 10, that is, one transmission beam combination component 231 is used to form a transmission beam from the light beams emitted by one row of chips 10 (one row of chips 10 may be five, six, seven, eight, nine or other number). The light beams emitted by the multiple rows of chips 10 are combined in the second direction. In some embodiments, the light emitted by all rows of chips 10 needs to be combined after being transmitted by the corresponding transmission beam combination component 231. In other embodiments, the light emitted by one row of chips 10 does not pass through the transmission beam combination component 231. The light emitted by the other rows of chips 10 needs to be combined after being transmitted by the corresponding transmission beam combination component 231 and the light emitted without passing through the transmission beam combination component 231.

[0032] In the embodiment, the semiconductor laser module 100 is applied to laser spatial beam combination. The multiple rows of chips 10 are arranged in the first direction with intervals. The chips 10 in each row are arranged in the second direction with intervals and are arranged in the third direction in a stepped manner. The chips 10 in different rows are arranged staggered in the light emitting direction. The transmission beam combination component 231 forms a transmission beam from the light beams emitted by the chips 10 arranged correspondingly. The light beams emitted by the multiple rows of chips 10 are combined in the second direction. The inclination angle and the specific structural size of the transmission beam combination component 231 can be flexibly adjusted. The light beams emitted by the multiple rows of chips 10 are all or partially arranged in a spot by the transmission beam combination component 231, combined in the second direction, and then coupled into the optical fiber 30 by the focusing mirror. In the embodiment, the optical shaping assembly 20 of the semiconductor laser module 100 includes the spatial beam combination component 23, and the spatial beam combination component 23 includes multiple transmission beam combination components 231. Each transmission beam combination component 231 is used to form a transmission beam from the light beams emitted by the chips 10 arranged correspondingly, so as to reduce the coupling loss and improve the photoelectric efficiency. The semiconductor laser module 100 can be used for beam combination of multiple rows of light beams, and the manufacturing cost of the transmission beam combination component 231 is relatively low.

[0033] In one embodiment, the multiple chips 10 are arranged in m rows in the first direction with intervals, and each row includes n chips 10. m and n are both positive integers. Each transmission beam combination component 231 includes n transmission grating light guide plates 231a arranged with intervals. The light beams emitted by the n chips 10 in each row are formed into transmission beams by the n transmission grating light guide plates 231a, respectively. The transmission beams formed by the m rows of chips 10 are combined in the second direction.

[0034] In the embodiment, on one hand, each transmission grating light guide plate 231a independently processes the light beams emitted by the corresponding single chip 10. The n independent transmission grating light guide plates 231a can perform precise shaping on the n light beams in parallel and without interference. For example, each transmission grating light guide plate 231a can also be internally provided with a micro-optical structure (such as a microlens array) to perform collimation, beam expansion, astigmatism correction, etc. on the light beams, so as to lay a solid foundation for subsequent high-quality beam combination.

[0035] In another aspect: In the single row of chips 10, the optical axes of the n transmissive grating light guide plates 231a on the same transmissive beam combining component 231 can be easily and precisely aligned with each other by precise mechanical adjustment, so that the n light beams output by them achieve high parallelism and pointing consistency, which is equivalent to completing the parallelization of the light beams in the "one-dimensional" direction first. In the multi-row of chips 10, the light beams output by each row of chips 10 become highly parallel light beam arrays after passing through the corresponding transmissive beam combining component 231, and only need to be simply and precisely deflected in the second direction (which can be realized by a tilted surface of the transmissive beam combining component 231 itself, or by a subsequent optical element) to make the m parallel light beam arrays precisely and precisely superimposed and combined in the second direction.

[0036] In another aspect of the embodiment, the transmissive grating light guide plates 231a arranged at intervals provide a physical heat dissipation channel, avoiding the concentration and mutual interference of heat.

[0037] In one embodiment, m is a positive integer greater than 2, and n is a positive integer. The spatial beam combining component 23 includes (m-1) transmissive beam combining components 231. m can be equal to 3, 4, 5, 6, etc.

[0038] When m is an odd number (m is an odd number greater than 2), the light emitted by the (m+1) / 2 row of chips 10 is directly emitted without passing through any transmissive beam combining component 231. The light emitted by each of the remaining (m-1) rows of chips 10 passes through one of the (m-1) transmissive beam combining components 231 to form a transmissive light beam. The light emitted by the (m+1) / 2 row of chips 10 and the (m-1) transmissive light beams are all combined in the direction of the light emitted by the (m+1) / 2 row of chips 10. Please refer to Figure 4 , m=3, the light emitted by the second row of chips 10 is directly emitted without passing through any transmissive beam combining component 231. The light emitted by each of the remaining two rows (the first row and the third row) of chips 10 passes through one of the two transmissive beam combining components 231 to form a transmissive light beam. The light emitted by the second row of chips 10 and the two transmissive light beams of the first row and the third row are all combined in the direction of the light emitted by the second row of chips 10.

[0039] When m is even (m is an even number greater than 2), the light emitted by the m / 2th row of chips 10 is emitted directly without passing through any of the transmissive beam combining components 231. The light emitted by each of the remaining (m-1) rows of chips 10 passes through one of the (m-1) transmissive beam combining components 231 to form a transmissive light beam. The light emitted by the m / 2th row of chips 10 and the (m-1) transmissive light beams are all combined at the direction of the light emitted by the m / 2th row of chips 10, or the light emitted by the m / 2+1th row of chips 10 and the (m-1) transmissive light beams are all combined at the direction of the light emitted by the m / 2+1th row of chips 10. Please refer to Figure 5 and Figure 6 m = 4, the light emitted by the second row of chips 10 is emitted directly without passing through any of the transmissive beam combining components 231. The light emitted by each of the remaining three rows of chips 10 passes through one of the three transmissive beam combining components 231 to form a transmissive light beam. The light emitted by the second row of chips 10 and the three transmissive light beams are all combined at the direction of the light emitted by the second row of chips 10 (the light emitted by the second row of chips 10 and the three transmissive light beams are all combined at the direction of the light emitted by the second row of chips 10, or the light emitted by the third row of chips 10 and the three transmissive light beams are all combined at the direction of the light emitted by the third row of chips 10). Figure 5 and Figure 6 at the direction of the light emitted by the second row of chips 10). The direction of the light emitted by the second row of chips 10 refers to the direction of the light emitted by the second row of chips 10 and shaped by the optical shaping component 20. Alternatively, in other embodiments, the light emitted by the third row of chips 10 and the three transmissive light beams are all combined at the direction of the light emitted by the third row of chips 10.

[0040] In this embodiment, m is a positive integer greater than 2. When m is odd, for example: 3, 5, 7 or other odd numbers, the beams are combined to the middle row. When m is even, for example: 4, 6, 8 or other even numbers, the beams are combined to one of the middle rows.

[0041] In one embodiment, m is a positive integer greater than 1, and n is a positive integer. The spatial beam combining component 23 includes m transmissive beam combining components 231. m can be equal to 2, 3, 4, 5, 6, etc.

[0042] When m is odd, the light emitted by each of the m rows of chips 10 passes through one of the m transmissive beam combining components 231 to form a transmissive light beam. The m transmissive light beams are all combined at the position of the (m+1) / 2th row of chips 10. In one embodiment, m = 5, the light emitted by each of the five rows of chips 10 passes through one of the five transmissive beam combining components 231 to form a transmissive light beam. The five transmissive light beams are all combined at the position of the third row of chips 10 (not shown in the figure).

[0043] When m is an even number, the light emitted from each row of chips 10 in the m rows of chips 10 passes through one of the m transmission beam combining components 231 to form a transmitted beam. The m transmitted beams converge at the midpoint between the m / 2th and m / 2+1th rows. This midpoint can be the very center of the m / 2th and m / 2+1th rows, or a position closer to one of the rows. In one embodiment, m=6, the light emitted from each row of chips 10 in the six rows of chips 10 passes through one of the six transmission beam combining components 231 to form a transmitted beam. The six transmitted beams converge at the midpoint between the third and fourth rows (not shown).

[0044] In this embodiment, m is a positive integer greater than 1. When m is an odd number, such as 3, 5, 7 or other odd numbers, the bundle is placed in the middle row, or in any position between rows. When m is an even number, such as 2, 4, 6, 8 or other even numbers, the bundle is placed in the middle position between the m / 2th row and the m / 2+1th row.

[0045] In one embodiment, the optical shaping component 20 includes a collimating lens 21, a first reflecting mirror 22, and a focusing lens 25 arranged sequentially along the light propagation path of the chip 10, and a spatial beam-combining component 23 disposed between the first reflecting mirror 22 and the focusing lens 25.

[0046] like Figure 2 As shown, the collimating lens 21 includes a fast-axis collimating lens 21a and a slow-axis collimating lens 21b. The focusing lens 25 includes a first focusing lens 25a and a second focusing lens 25b. Through the synergistic effect of multiple lenses, collimation and focusing operations on light can be performed more precisely, further optimizing the light transmission quality and ensuring that light maintains good beam characteristics during propagation, thus meeting the requirements of high-precision light transmission.

[0047] The number of collimating lenses 21 and the number of first reflecting mirrors 22 are equal to the number of chips 10. The first reflecting mirrors 22 are used to reflect the light beam emitted from the chip 10 after being collimated by the collimating lenses 21 to the transmission beam combining component 231.

[0048] Each transmission beam combiner 231 includes a plurality of transmission grid light guide plates 231a stacked and spaced along a third direction. One transmission grid light guide plate 231a is used to transmit a collimated light beam reflected by a first reflector 22. The plurality of transmission beam combiners 231 are used to transmit and combine a plurality of collimated light beams located in a third direction to form a collimated beam combiner.

[0049] In the embodiment, the propagation path of the light comprises: a collimated light path (the light emitted by the chip 10 is collimated by the collimating lens 21), a first reflected light path (the first mirror 22 reflects the collimated light at a preset angle, which can be adjusted according to design needs), a transmission and beam combining light path (one of the transmission and beam combining components 231 in the spatial beam combining component 23 transmits and combines the light emitted by the multiple chips 10 in one row of chips 10, and the different transmission and beam combining components 231 are arranged at different positions to transmit and combine the light emitted by the chips 10 in different rows), and a focusing light path (the focused lens 25 focuses the light beam after transmission and beam combination). This staged and targeted light path design can accurately control and guide the light to propagate along the expected path efficiently, ensuring the accuracy and efficiency of light transmission.

[0050] In one embodiment, an anti-reflection sheet 24 is arranged between the transmission and beam combining component 231 and the focused lens 25 in the propagation path of the light. The anti-reflection sheet 24 blocks the light returned by the optical fiber 30 from reaching the chip 10, causing the chip 10 to fail. The anti-reflection sheet 24 arranged in the propagation path of the light improves the stability and reliability of the chip 10, prolongs the service life of the chip 10, and reduces the failure and maintenance costs caused by the returned light.

[0051] In one embodiment, the distance between the chip 10 at the preset position in the ith row and the chip 10 at the corresponding preset position in the ith+1 row is D1, i is a positive integer, and ith+1≤m. The angle between the length extension direction of the transmission and beam combining component 231 and the second direction is θ1, and the length of the transmission and beam combining component 231 is L3, which satisfies: .

[0052] In the embodiment, the length of the transmission and beam combining component 231, the angle between the length extension direction and the second direction, and the distance between the chip 10 at the preset position in the ith row and the chip 10 at the corresponding preset position in the ith+1 row satisfy the design requirements. In the embodiment, the reasonable inclination angle can reduce unnecessary optical phenomena such as reflection and scattering of light during transmission and beam combination, reduce energy loss of light, and avoid interference of stray light on the chip 10 or other optical components, ensuring the quality of light transmission and stable operation of the chip 10.

[0053] In one embodiment, the number of transmission grating light guide plates 231a is equal to the number of the corresponding row of chips 10. The collimating lens 21 comprises a fast-axis collimating lens 21a and a slow-axis collimating lens 21b.

[0054] ​The air gap between two adjacent transmissive grating light guide plates 231a in the third direction in the transmissive combining component 231 is d1, the focal length of the fast-axis collimating lens 21a is f2, the fast-axis divergence half-angle of the chip 10 is θ2, the height difference of the steps between two adjacent chips 10 in the first direction is H1, and the height of the transmissive combining component 231 extending in the third direction is h1, and the following conditions are met: 2*f2*tanθ2≤d1≤m*H1-2*(m-1)*f2*tanθ2. 2*f2*tanθ2≤h1≤(m*H1-2*f2*tanθ2) / (m-1).

[0055] In this embodiment, the requirement for the air gap of the transmissive combining component 231 is limited by 2*f2*tanθ2≤d1≤m*H1-2*(m-1)*f2*tanθ2, that is, the path of the middle collimated light beam is wider than the collimated light beam passing through it, and space is left for the collimated light beams on both sides. The requirement for the refractive path of the light beams on both sides of the transmissive combining component 231 is limited by 2*f2*tanθ2≤h1≤(m*H1-2*f2*tanθ2) / (m-1), that is, the path of the collimated light beams on both sides is wider than the collimated light beam passing through it, and space is left for the middle collimated light beam.

[0056] In one embodiment, the width of the slow-axis collimating lens 21b is w1, and the length of the first mirror 22 is L2, and the following conditions are met: .

[0057] In this embodiment, the interference between the first mirror 22 and the slow-axis collimating lens 21b is prevented by the limitation of , the mutual interference of the elements is avoided to cause optical system failure or performance degradation, and it is ensured that the size is sufficient to reflect all light, ensuring the integrity of the optical signal transmission and the reflection process.

[0058] In one embodiment, the distance between two adjacent chips 10 in the same row is L1, the slow-axis divergence half-angle of the chip 10 is θ1, the width of the chip 10 is w0, and the focal length of the slow-axis collimating lens 21b is f1, and the following conditions are met: 2*tanθ1*f1≤w1≤(L1-w0) / (m-1). f1≥2*D1.

[0059] In this embodiment, the arrangement of the slow-axis collimating lens 21b and the chip 10 is prevented from interfering and blocking the light path by the limitation of 2*tanθ1*f1≤w1≤(L1-w0) / (m-1), and it is ensured that the size of the slow-axis collimating lens 21b can collimate all light. The focal length of the slow-axis collimating lens 21b is specified by f1≥2*D1, so that the slow-axis collimating lens 21b is located on the other side of the chip 10, without affecting the arrangement of the chip 10.

[0060] In one embodiment, the optical fiber 30 is further included, disposed on the light-emitting side of the optical shaping component 20, and the light beam transmitted through the optical shaping component 20 is a shaped beam. The optical fiber 30 and the shaped beam are horizontally arranged.

[0061] In this embodiment, when the beam adjusted by the optical shaping component 20 is aligned with the end face of the optical fiber 30, the beam can enter the optical fiber 30 with extremely low loss, greatly improving the coupling efficiency, making more laser power available and reducing energy waste.

[0062] In one embodiment, the system further includes an upper housing (not shown) and a lower housing 101, with multiple chips 10 and optical shaping components 20 disposed on the surface of the lower housing 101, and an optical fiber 30 penetrating the sidewall of the lower housing 101. In this embodiment, the upper housing and lower housing 101 may be made of copper tubing to reduce the production cost of the semiconductor laser module 100.

[0063] In a specific embodiment: such as Figure 3 As shown, the horizontal spacing between two adjacent chips 10 in the second direction is set to 4 mm, and the vertical spacing between two adjacent chips 10 in the plane perpendicular to the second direction is set to 6 mm. The step height difference between the first chip 10 in the first row and the first chip 10 in the second row in the third direction is 0.42 mm. The step height difference between the first chip 10 in the second row and the first chip 10 in the third row in the third direction is also 0.42 mm. The slow-axis divergence half-angle of the chip 10 is 4°, the fast-axis divergence half-angle of the chip 10 is 24°, the heat sink width of the chip 10 is 4 mm, the number of chips 10 in each row is 7, and the step height difference between the first chip 10 and the 7th chip 10 is 1.26 mm. The focal length of the slow-axis collimating lens 21b is 13 mm, the focal length of the fast-axis collimating lens 21a is 0.36 mm, the width of the slow-axis collimating lens 21b is 3.5 mm, and the length of the first reflecting mirror 22 is 5 mm. The air gap between the two transmission beam combining components 231 (transmission prisms) is 0.84 mm. Each transmission beam combining component 231 contains a transmission grid light guide plate 231a, each piece of which is 0.42 mm thick. These plates are stacked on top of each other, leaving a 0.42 mm air gap in between. Each transmission grid light guide plate 231a is made of quartz, with a length of 19.5 mm and a width of 9 mm. Both transmission beam combining components 231 are placed at a 45° angle, but their tilt directions are different (i.e., one transmission beam combining component 231 is tilted at a 45° angle relative to a second direction, and the other is tilted at a 45° angle relative to the light emission direction). The two transmission beam combining components 231 transmit the first and third rows of light beams respectively, while the air gap in the transmission grid light guide plate 231a transmits the second row of light beams.

[0064] The application also provides a preparation method of the semiconductor laser module 100, comprising: S1, providing the lower shell 101 and fixedly placing the plurality of chips 10 in the lower shell 101. The plurality of chips 10 are arranged in multiple rows along a first direction, and each row includes a plurality of chips 10. The chips 10 at corresponding positions of each row are arranged in a second direction and are arranged in a stepped manner in a third direction. The chips 10 of different rows are arranged staggered in an out-light direction. The third direction is perpendicular to a plane formed by the first direction and the second direction. In the plane formed by the first direction and the second direction, the out-light direction is perpendicular to the second direction. In this step, the arrangement of the chips 10 in the lower shell 101 can be achieved by installing and placing according to the size design when the lower shell 101 is processed.

[0065] S2, fixedly placing the optical shaping assembly 20 and the optical fiber 30 in the lower shell 101. The optical shaping assembly 20 includes a collimating lens 21, a first mirror 22, a spatial beam combining component 23, and a focusing lens 25 arranged in sequence on the propagation path of the light of the chip 10. The optical fiber 30 penetrates the side wall of the lower shell 101. The spatial beam combining component 23 includes a plurality of transmission beam combining components 231. Each transmission beam combining component 231 forms a transmission light beam from the light beam emitted by the corresponding arranged row of chips 10. The light beams emitted by the multiple rows of chips 10 are combined in the second direction and transmitted through the optical fiber 30.

[0066] In this embodiment, the spatial beam combining component 23 includes a plurality of transmission beam combining components 231. The inclination angle and the specific structural size of the transmission beam combining component 231 can be flexibly adjusted. Each transmission beam combining component 231 is used to form a transmission light beam from the light beam emitted by the corresponding arranged row of chips 10, thereby reducing the coupling loss and improving the photoelectric efficiency; and the semiconductor laser module 100 can be used for the beam combining of multiple rows of light beams, and the manufacturing cost of the transmission beam combining component 231 is relatively low.

[0067] In one embodiment, the step of fixedly placing the optical shaping assembly 20 and the optical fiber 30 includes: S21, curing the collimating lens 21 and the optical fiber 30. In this step, the collimating lens 21 includes a fast-axis collimating lens 21a arranged near the light outlet of the chip 10 and a slow-axis collimating lens 21b arranged at a certain distance from the fast-axis collimating lens 21a. The fast-axis collimating lens 21a and the slow-axis collimating lens 21b are respectively used for fast-axis collimation and slow-axis collimation of the light emitted by the chip 10. The fast-axis collimating lens 21a and the slow-axis collimating lens 21b are respectively fixedly arranged on the bottom of the lower shell 101. In this step, the optical fiber 30 is arranged on the side wall of the lower shell 101 and extends outwardly through the lower shell 101.

[0068] S22, the first mirror 22 is placed in the first preset position. Specifically, it includes: single-chip 10 power, the first mirror 22 is placed in the first preset position, and the pitch angle of the first mirror 22 is adjusted. When it is determined that the pitch angle of the first mirror 22 meets the preset requirements, the first mirror 22 is point glued and cured. The position of the first mirror 22 is set to ensure that the centroid coordinates of the beam analyzer remain unchanged at the near-field position and the far-field position, and then the coupling of the first mirror 22 is completed.

[0069] S23, the focusing lens 25 is cured. When the focusing lens 25 is cured in this step, it is ensured that the light beam does not shift left and right and up and down. The specific steps include: the exit end of the optical fiber 30 is aligned with the power meter. A diaphragm is provided and arranged between the incident end face of the optical fiber 30 and the focusing lens 25, so that the center of the diaphragm corresponds to the center of the optical fiber 30, thereby realizing the alignment of the focusing lens 25.

[0070] S24, the transmission beam combining component 231 is adjusted and cured, wherein the step of curing a transmission beam combining component 231 includes: S2401, a transmission grating light guide plate 231a is provided, placed in the second preset position, and a turning prism is arranged behind the transmission grating light guide plate 231a, and the left and right positions of the turning prism are aligned with the center of the optical fiber 30.

[0071] S2402, the light beam emitted by the single-chip 10 is reflected to the transmission grating light guide plate 231a through the first mirror 22, exits into the turning prism, and the light exiting from the turning prism is observed and confirmed. If the light spot is not complete, the position and angle of the transmission grating light guide plate 231a need to be adjusted.

[0072] S2403, after the position and angle of the transmission grating light guide plate 231a are adjusted, the turning prism is removed, and the light beam emitted by the single-chip 10 after power-on passes through the transmission grating light guide plate 231a and is focused into the optical fiber 30 through the focusing lens 25, and then exits from the optical fiber 30 to the power meter. The power change of the power meter is observed, and it is judged whether the exiting power value reaches the standard power value. If it does not reach the standard power value, the position and angle of the transmission grating light guide plate 231a are fine-tuned until the power value of the optical fiber 30 reaches the maximum exiting power value.

[0073] S2404, according to the steps of S2401-S2403, the position and angle of each chip 10 in a row of chips 10 corresponding to the transmission grating light guide plate 231a are determined, and the position and angle of a transmission grating light guide plate 231a in a transmission beam combining component 231 are determined, and so on. Starting from the bottom piece, one layer after another is coupled to the top piece of the transmission grating light guide plate 231a. The side of the plurality of transmission grating light guide plates 231a is vertically cured, and the plurality of transmission grating light guide plates 231a are fixed on the glass sheet to complete the curing of a transmission beam combining component 231.

[0074] In this embodiment, the adjustment and curing process of the collimating lens 21, the first reflecting mirror 22, the transmission beam combining component 231, the curing focusing lens 25 and the optical fiber 30 are refined. After curing a transmission beam combining component 231, another one or more transmission beam combining components 231 are further cured according to the method of S2401-S2404, so that each transmission beam combining component 231 forms a transmission beam from the light beams emitted by the corresponding row of chips 10 arranged with it, thereby reducing the coupling loss and improving the photoelectric efficiency. The semiconductor laser module 100 can be used for the beam combining of multiple rows of light beams, and the manufacturing cost of the transmission beam combining component 231 is reduced.

[0075] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, and not to limit them; although the present application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the foregoing embodiments, or make equivalent replacement for part or all of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A semiconductor laser module comprising: Multiple rows of chips (10) and an optical shaping assembly (20); The multiple rows of chips (10) are arranged in a first direction, and each row of chips (10) comprises a plurality of the chips (10); It is characterized in that, Each row of chips (10) is arranged in a second direction and in a third direction in a stepped manner; the chips (10) in different rows are arranged in a staggered manner in an outgoing direction; the third direction is perpendicular to a plane formed by the first direction and the second direction; in the plane formed by the first direction and the second direction, the outgoing direction is perpendicular to the second direction; The optical shaping assembly (20) comprises a spatial beam combining component (23); the spatial beam combining component (23) comprises a plurality of transmission beam combining components (231); the transmission beam combining components (231) form transmission beams from the light beams emitted by the chips (10) arranged correspondingly; the light beams emitted by the multiple rows of chips (10) are combined in the second direction.

2. The semiconductor laser module according to claim 1, characterized in that The multiple rows of chips (10) are arranged in the outgoing direction, and each row comprises n chips (10); Each transmission beam combining component (231) comprises n transmission grid light guide plates (231a); the light beams emitted by the n chips (10) in each row form transmission beams through the n transmission grid light guide plates (231a) respectively; the transmission beams formed by the m rows of chips (10) are combined in the second direction.

3. The semiconductor laser module according to claim 2, characterized in that m is a positive integer greater than 2, and n is a positive integer; the spatial beam combining component (23) comprises m-1 transmission beam combining components (231); When m is an odd number, the light emitted by the (m+1) / 2th row of chips (10) is directly emitted without passing through any transmission beam combining component (231); the light emitted by each of the remaining m-1 rows of chips (10) forms a transmission beam through one of the m-1 transmission beam combining components (231); the light emitted by the (m+1) / 2th row of chips (10) and the m-1 transmission beams are combined in the direction of the light emitted by the (m+1) / 2th row of chips (10); When m is an even number, the light emitted by the m / 2th row of chips (10) is directly emitted without passing through any transmission beam combining component (231); the light emitted by each of the remaining m-1 rows of chips (10) forms a transmission beam through one of the m-1 transmission beam combining components (231); the light emitted by the m / 2th row of chips (10) and the m-1 transmission beams are combined in the direction of the light emitted by the m / 2th row of chips (10), or the light emitted by the m / 2+1th row of chips (10) and the m-1 transmission beams are combined in the direction of the light emitted by the m / 2+1th row of chips (10).

4. The semiconductor laser module according to claim 2, characterized in that m is a positive integer greater than 1, and n is a positive integer; the spatial beam combining component (23) comprises m transmission beam combining components (231); When m is an odd number, the light emitted by each of the m rows of chips (10) passes through one of the m transmissive beam combining components (231) to form a transmissive light beam; the m transmissive light beams are combined at a position between the (m+1) / 2 row of chips (10); When m is an even number, the light emitted by each of the m rows of chips (10) passes through one of the m transmissive beam combining components (231) to form a transmissive light beam; the m transmissive light beams are combined at a position between the m / 2 row and the m / 2+1 row of chips (10).

5. The semiconductor laser module according to any one of claims 1 to 4, characterized in that The optical shaping assembly (20) comprises, in sequence along the propagation path of the light from the chips (10), collimating lenses (21), first reflecting mirrors (22), and focusing lenses (25), and the spatial beam combining component (23) is arranged between the first reflecting mirror (22) and the focusing lens (25). The number of collimating lenses (21) and the number of first reflecting mirrors (22) are equal to the number of chips (10); the first reflecting mirror (22) is configured to reflect the collimated light beams emitted by the chips (10) through the collimating lenses (21) to the transmissive beam combining component (231). Each transmissive beam combining component (231) comprises a plurality of transmissive grid light guide plates (231a) arranged in layers along the third direction, one of which is configured to transmit the collimated light beams reflected by one of the first reflecting mirrors (22); and the plurality of transmissive beam combining components (231) are configured to transmit and combine the collimated light beams in the third direction to form collimated combined light.

6. The semiconductor laser module according to claim 5, characterized in that The distance between the chip (10) in the i-th row preset position and the chip (10) in the i+1-th row corresponding preset position is D1, i is a positive integer, i+1≤m; the angle between the length extension direction of the transmission beam combining component (231) and the second direction is , the length of the transmission beam combining component (231) is L3, and the following is satisfied: .

7. The semiconductor laser module according to claim 5, characterized in that The number of transmissive grid light guide plates (231a) is equal to the number of the corresponding row of chips (10); and the collimating lens (21) comprises a fast-axis collimating lens (21a) and a slow-axis collimating lens (21b). The air gap between two adjacent transmissive grid light guide plates (231a) in the transmissive beam combining component (231) along the third direction is d1, the focal length of the fast-axis collimating lens (21a) is f2, the fast-axis divergence half-angle of the chip (10) is θ2, the step height difference between two adjacent chips (10) along the first direction is H1, and the height of the transmissive beam combining component (231) along the third direction is h1, which satisfy: 2*f2*tanθ2≤d1≤m*H1-2*(m-1)*f2*tanθ2; 2*f2*tanθ2≤h1≤(m*H1-2*f2*tanθ2) / (m-1).

8. The semiconductor laser module according to claim 7, characterized in that The width of the slow-axis collimating lens (21b) is w1, and the length of the first mirror (22) is L2, and the following is satisfied: .

9. The semiconductor laser module according to claim 8, characterized in that The distance between two adjacent chips (10) in the same row is L1, the slow-axis divergence half-angle of the chip (10) is θ1, the width of the chip (10) is w0, and the focal length of the slow-axis collimating lens (21b) is f1, which satisfy: 2tanθ1*f1≤w1≤(L1-w0) / (m-1); and f1≥2*D1.

10. The semiconductor laser module according to claim 5, characterized in that Further comprising: An optical fiber (30) is arranged on the light exit side of the optical shaping assembly (20), and the light beam transmitted through the optical shaping assembly (20) is a shaped light beam; The optical fiber (30) is arranged horizontally with the shaped light beam.

11. The semiconductor laser module according to claim 10, characterized in that Further comprising: An upper shell and a lower shell (101), a plurality of the chips (10) and the optical shaping assembly (20) are arranged on the surface of the lower shell (101), and the optical fiber (30) penetrates the side wall of the lower shell (101).

12. A method of manufacturing a semiconductor laser module, characterized by, Comprising: S1, providing a lower shell (101) and fixedly arranging a plurality of chips (10) in the lower shell (101); the plurality of chips (10) are arranged in multiple rows in a first direction, each row includes a plurality of chips (10); the chips (10) at corresponding positions in each row are arranged in a second direction and arranged in a stepped manner in a third direction; the chips (10) in different rows are arranged staggered in an light exit direction; the third direction is perpendicular to the plane formed by the first direction and the second direction; in the plane formed by the first direction and the second direction, the light exit direction is perpendicular to the second direction; S2, fixedly arranging an optical shaping assembly (20) and an optical fiber (30) in the lower shell (101); the optical shaping assembly (20) includes: a collimating lens (21), a first mirror (22), a spatial beam combining component (23), and a focusing lens (25) arranged in sequence on the propagation path of the light of the chip (10); the optical fiber (30) penetrates the side wall of the lower shell (101); the spatial beam combining component (23) includes a plurality of transmission beam combining components (231); each transmission beam combining component (231) forms a transmission light beam from the light beam emitted by a row of chips (10) arranged corresponding thereto; the light beams emitted by the multiple rows of chips (10) are combined in the second direction and transmitted through the optical fiber (30).

13. The method of claim 12, wherein the semiconductor laser module is prepared by a process comprising: Wherein, The step of fixedly arranging the optical shaping assembly (20) and the optical fiber (30) includes: S21, curing the collimating lens (21) and the optical fiber (30); S22, placing the first mirror (22) at a first preset position; S23, curing the focusing lens (25); S24, adjusting and curing the transmission beam combining component (231), wherein the step of curing one transmission beam combining component (231) includes: S2401, providing a transmission grating light guide plate (231a) and placing it at a second preset position, and arranging a turning prism behind the transmission grating light guide plate (231a), the left and right positions of the turning prism are aligned with the center of the optical fiber (30); S2402, the light beam emitted by single-channel energization of the chip (10) is reflected to the transmission grating light guide plate (231a) through the first mirror (22), exits into the turning prism, and observes and confirms whether the light exiting from the turning prism is complete; if the light spot is not complete, the position and angle of the transmission grating light guide plate (231a) need to be adjusted. S2403, the position and angle of the transmission grating light guide plate (231a) is adjusted, the turning prism is removed, the light beam emitted by the single chip (10) is focused into the optical fiber (30) through the focusing lens (25) after the single chip (10) is powered on, and the light beam is emitted to the power meter through the optical fiber (30). The power change of the power meter is observed, whether the emitted power value reaches the standard power value is judged, if the standard power value is not reached, the position and angle of the transmission grating light guide plate (231a) is fine-tuned until the power value emitted by the optical fiber (30) reaches the maximum emitted power value; S2404, according to the steps of S2401-S2403, the position and angle of the transmission grating light guide plate (231a) corresponding to each chip (10) in the row of chips (10) is determined, the position and angle of one transmission grating light guide plate (231a) in one transmission beam combining component (231) is determined, and so on. From the bottom piece, one layer is added to the top piece of the transmission grating light guide plate (231a). The side of the plurality of transmission grating light guide plates (231a) is vertically solidified, and the plurality of transmission grating light guide plates (231a) is fixed on the glass sheet to complete the solidification of one transmission beam combining component (231).

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