Helicene molecule-based capacitance-inductance dual-function device and preparation method thereof

Abstract

The invention relates to the technical field of molecular devices, in particular to a helicene molecule-based capacitance-inductance dual-function device and a preparation method thereof. The device comprises a first graphene point electrode, helicene molecules and a second graphene point electrode, the first graphene point electrode and the second graphene point electrode form a graphene point electrode pair, and the helicene molecules are connected between the graphene point electrode pair; the helicene molecules are switched between a capacitance effect and an inductance effect by changing the voltage change rate of alternating current applied to the helicene molecules; when the voltage change rate of the alternating current is 0.1-1.0 V / s, the helicene molecules have an inductance effect; and when the voltage change rate of the alternating current is greater than or equal to 10V / s, the helicene molecules have a capacitance effect. According to the preparation method provided by the invention, preparation is carried out on the basis of the graphene single-molecule field effect transistor, remarkable miniaturization of the size of the device is realized, and a relatively high integration level is shown.

Description

Technical Field

[0001] This invention relates to the field of molecular device technology, and in particular to a capacitive and inductive dual-function device based on helene molecules and its fabrication method. Background Technology

[0002] With the convergence of nanotechnology and molecular engineering, molecular electronics has entered a phase of rapid development in recent years due to its value in breaking through Moore's Law limitations and achieving extreme miniaturization of electronic devices. Single-molecule devices, as the core research object of molecular electronics, rely on their atomically precise structural controllability and unique quantum effects at the nanoscale, demonstrating irreplaceable application prospects in fields such as ultra-high-density storage, micro-sensing, and low-power circuits. Traditional research on single-molecule electronic devices has largely focused on relatively mature devices such as switches and rectifiers. However, research on inductors and capacitors—core components constituting key modules in electronic circuits such as filter networks, timing control, and energy buffers—at the single-molecule scale has long lagged behind. This research gap has gradually become a significant bottleneck restricting the integration of single-molecule circuits into complex functions.

[0003] Inductors use magnetic fields to store energy for signal coupling, frequency selection, and current smoothing, while capacitors rely on electric fields to store energy for charge, signal filtering, and voltage stabilization. Together, they support the signal processing and energy management functions of almost all electronic devices. However, when the device scale shrinks to the single-molecule level, its electrical characteristics differ fundamentally from those of macroscopic systems. In single-molecule systems, electron transport no longer follows classical Ohm's law but is dominated by quantum mechanisms such as quantum tunneling, electron-phonon coupling, and intramolecular charge redistribution. This results in significant differences between the frequency-dependent inductive reactance of a single-molecule inductor and the capacitive reactance of a capacitor and those of macroscopic metal coils and dielectric capacitors.

[0004] Graphene, as a two-dimensional material with excellent electrical properties, is an ideal material for constructing single-molecule devices due to its unique electronic structure and high conductivity. However, a technical strategy for efficiently integrating functional molecules into graphene electrode systems to achieve dual inductive and capacitive functions has not yet been developed. Summary of the Invention

[0005] This invention aims to at least solve one of the technical problems existing in related technologies. Therefore, the first objective of this invention is to provide a capacitive-inductive dual-function device based on helene molecules; the second objective of this invention is to provide a method for fabricating a capacitive-inductive dual-function device based on helene molecules.

[0006] To achieve the first objective, the technical solution adopted by this invention is as follows: A capacitive-inductive dual-function device based on helicene molecules includes a first graphene point electrode, a helicene molecule, and a second graphene point electrode. The first graphene point electrode and the second graphene point electrode form a graphene point electrode pair, and the helicene molecule is connected between the graphene point electrode pairs. The structural formula of the helicene molecule is shown below: ; By changing the rate of change of the alternating current applied to the helicene molecule, the helicene molecule can switch between capacitive and inductive effects; When the voltage change rate of the alternating current is 0.1 to 1.0 V / s, the helicene molecule exhibits an inductive effect; when the voltage change rate of the alternating current is greater than or equal to 10 V / s, the helicene molecule exhibits a capacitive effect. A single helicene molecule is connected between the first graphene point electrode and the second graphene point electrode.

[0007] In the design of inductors and capacitors, utilizing the rigid and conductive helical conjugated structure is crucial for designing coiled monomolecular wires. Helicenes are polycyclic aromatic compounds formed by ortho-fused benzene rings or other aromatic rings, exhibiting a rigid and helical geometry due to the intramolecular spatial repulsion of the two terminal rings. The delocalized helical π-conjugated system in helicenes provides two charge pathways within the molecule: one through the coiled backbone and the other through interlayer intramolecular π-π stacking. These two charge pathways correspond to different electrical components: inductors and capacitors. The main difference between them lies in their response behavior when an alternating current (AC) field is applied. Capacitors allow AC to pass through, while inductors block AC. Inductors exhibit a delayed current response relative to the applied AC voltage, a phenomenon known as current hysteresis. Specifically, the current reacts more slowly than the voltage. In contrast, capacitors exhibit a current lead effect, characterized by a faster current response than the voltage response when an AC field is applied. Based on the above principles, this invention uses helicene molecules with rigid and conductive conjugated structures as the core functional molecules, and connects them between graphene point electrode pairs through chemical self-assembly to form a dual-functional capacitive and inductive device based on helicene molecules. When the alternating current voltage change rate is 0.1–1.0 V / s, charge selectively flows through the helical backbone to form a conjugated helical backbone transfer path, generating a toroidal current and exhibiting inductor behavior with current hysteresis; the helicene molecule exhibits an inductive effect. When the alternating current voltage change rate is greater than or equal to 10 V / s, charge flow within the device is hindered, and charge can move vertically between the two layers through intramolecular π-π stacking effects to form π-π stacking paths; the helicene molecule exhibits a capacitive effect. By adjusting the alternating current voltage change rate to manipulate the charge transport path, the function of the helicene molecules in the dual-functional capacitive and inductive device based on helicene molecules can be switched between inductor and capacitor modes.

[0008] Preferably, the first graphene point electrode and the second graphene point electrode are single-layer graphene point electrodes.

[0009] Preferably, the first graphene point electrode and the second graphene point electrode are array electrodes.

[0010] Preferably, the first graphene point electrode and the second graphene point electrode are nano-gap electrodes.

[0011] To achieve the second objective, the technical solution adopted by this invention is as follows: A method for fabricating a capacitive-inductive dual-function device based on helene molecules, used to fabricate any of the aforementioned capacitive-inductive dual-function devices based on helene molecules, comprising the following steps: S100. A metal oxide dielectric layer is prepared on a substrate using a thermal evaporation method. S200. Prepare a single layer of graphene on a copper foil using a vapor deposition method, and transfer the single layer of graphene onto the metal oxide dielectric layer to obtain a graphene dielectric layer. S300. Using oxygen plasma etching and electrical burn-off method, graphene point electrode pairs are prepared on the graphene dielectric layer. S400. The graphene point electrode pair is placed in a pyridine solution containing helicene molecules and a condensing agent, so that the helicene molecules and the graphene point electrode pair self-assemble to obtain a device with dual capacitive and inductive functions based on helicene molecules.

[0012] Preferably, in step S100, the metal oxide dielectric layer is selected from the aluminum oxide dielectric layer.

[0013] Preferably, the thickness of the alumina dielectric layer is 30–40 nm.

[0014] Preferably, in step S100, the substrate is selected from silicon wafers.

[0015] Preferably, in step S400, the synthetic route of the helicene molecule is shown in the figure below: .

[0016] Preferably, in step S400, the condensing agent is selected from 1-(3-dimethylaminopropyl)-3-2-ethylcarbodiimide hydrochloride.

[0017] The above-described one or more technical solutions in the embodiments of the present invention have at least one of the following technical effects: This invention provides a dual-functional capacitive and inductive device based on helicene molecules, comprising a first graphene point electrode, a helicene molecule, and a second graphene point electrode. The first and second graphene point electrodes form a graphene point electrode pair, with the helicene molecule connected between the graphene point electrode pairs. By changing the rate of change of the alternating current applied to the helicene molecule, the helicene molecule can switch between capacitive and inductive effects. When the rate of change of the alternating current is 0.1–1.0 V / s, the helicene molecule exhibits an inductive effect; when the rate of change of the alternating current is greater than or equal to 10 V / s, the helicene molecule exhibits a capacitive effect. The delocalized helical π-conjugated system in the helicene molecule provides two charge transfer pathways within the molecule: one through a coiled framework, and the other through intramolecular π-π stacking between layers. These two charge transfer pathways ensure the occurrence of both capacitive and inductive effects in the device, and the realization of these two effects can be switched simply by changing the rate of change of the applied alternating current. The existence and switching mechanism of these two charge transfer paths provide new ideas for the design and implementation of single-molecule logic devices, which helps to precisely control the charge transport path, thereby realizing the inductive and capacitive behavior of helicene molecules under different alternating current voltage change rates.

[0018] Meanwhile, the method for fabricating a dual-function capacitor-inductor based on helene molecules provided by this invention, using graphene monomolecular field-effect transistors as the basis, achieves significant miniaturization of the device size and exhibits high integration. This characteristic provides a new approach for the miniaturization and high-density integration of functional chips.

[0019] Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. Attached Figure Description

[0020] Figure 1 This is a schematic diagram of the structure of a dual-function capacitive and inductive device based on helixene molecules provided in an embodiment of the present invention.

[0021] Figure 2 This is a schematic diagram of two controllable charge transport pathways for helicene molecules provided in an embodiment of the present invention.

[0022] Figure 3 This is a current-voltage (IV) curve of a helene-based dual-function capacitive-inductive device when different voltage change rates (0.1V / s, 1.0V / s, 10V / s, 100V / s) are applied, as provided in Embodiment 2 of the present invention.

[0023] Figure 4 This is the IV curve of the dual-function capacitive and inductive device based on helene molecules provided in Embodiment 2 of the present invention at different scan rates (0.1V / s, 100V / s).

[0024] Figure label: 1. First graphene point electrode; 2. Helene molecule; 3. Second graphene point electrode. Detailed Implementation

[0025] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions of this invention will be clearly and completely described below in conjunction with specific embodiments. Obviously, the described embodiments are only some embodiments of this invention, not all embodiments. Based on the embodiments of this invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this invention. The following embodiments are used to illustrate this invention, but cannot be used to limit the scope of this invention.

[0026] like Figure 1 As shown, a device based on helicene molecules with both capacitive and inductive functions includes a first graphene point electrode 1, a helicene molecule 2, and a second graphene point electrode 3. The first graphene point electrode 1 and the second graphene point electrode 3 form a graphene point electrode pair, and the helicene molecule 2 is connected between the graphene point electrode pairs. The structural formula of the helicene molecule 2 is shown below: ; By changing the rate of change of the alternating current applied to the helicene molecule, the helicene molecule can switch between capacitive and inductive effects. When the voltage change rate of alternating current is 0.1–1.0 V / s, charge selectively flows through the helical skeleton to form a conjugate helical main chain transfer path (e.g., Figure 2 As shown), it generates a toroidal current and exhibits inductor behavior with current hysteresis; helicene molecules have an inductive effect; when the voltage change rate of alternating current is greater than or equal to 10V / s, the charge flow within the device is impeded, and the charge can move vertically between the two layers through the intramolecular π-π stacking effect to form π-π stacking paths (such as...). Figure 2 As shown in the figure, helicene molecules exhibit a capacitance effect.

[0027] In the following embodiments, unless otherwise specified, the experimental methods used are conventional methods, and the materials and reagents used are commercially available, unless otherwise specified, and are carried out in accordance with the techniques or conditions described in the literature in this field or in accordance with the product instructions.

[0028] Example 1 The synthetic route for helicene molecules is shown below: ; Its preparation process is as follows: I. Preparation of compound 2.

[0029] Compound 1 (100 mmol), ethylene glycol (110 mmol), trifluoromethanesulfonic acid (200 mmol), and toluene (500 mL) were added to a dry three-necked flask at 25 °C under nitrogen atmosphere, and the mixture was refluxed at 110 °C for 10 h. The resulting product was filtered and purified by column chromatography to obtain compound 2. 1 H NMR, 13 The C NMR and TOF-ESI+ data are as follows: 1 H NMR (500MHz, CDCl3): δ 7.72(d, J=2.3Hz, 1H), 7.40(dd, J=8.1, 2.3Hz, 1H), 7.09(dt, J=8.2, 1.0Hz, 1H), 5.34(t, J=3.7Hz , 1H), 3.96–3.82 (m, 4H), 3.09 (ddd, J=16.5, 3.7, 1.0Hz, 1H), 3.02 (ddd, J=16.5, 3.7, 1.0Hz, 1H); 13 C NMR (125MHz, CDCl3): δ 136.62, 134.46, 130.95, 130.69, 122.56, 121.61, 104.63, 64.92, 39.38; TOF-ESI+ (m / z): C 10 H 10 Br2O2322.00.

[0030] II. Preparation of compound 3.

[0031] At 25°C, under a nitrogen atmosphere, add 250 mL of a 1,4-dioxane solution of compound 2 with a concentration of 0.2 mmol / mL to a three-necked flask. (55 mmol), potassium acetate (300 mmol), PdCl2(dppf)2 (0.5 mmol), reacted at 100 °C for 5 h, the solvent was concentrated by rotary evaporation, and compound 3 was obtained by silica gel column chromatography. 1 HNMR, 13 The C NMR and TOF-ESI+ data are as follows: 1 H NMR (500MHz, CDCl3): δ 7.52(d, J=2.2Hz, 1H), 7.36(dd, J=7.1, 2.2Hz, 1H), 7.12(dt, J=7.4, 1.0Hz, 1H), 5 .30(t, J=3.6Hz, 1H), 3.96–3.81(m, 4H), 3.06(dd, J=3.6, 1.0Hz, 2H), 1.24(s, 9H); 13 C NMR (125MHz, CDCl3): δ 141.34, 135.21, 134.00, 131.91, 131.20, 122.30, 105.12, 83.78, 64.92, 40.41, 24.84; TOF-ESI+ (m / z): C 16 H 22 BBrO4369.06.

[0032] III. Preparation of compound 4.

[0033] Compound 3 (40 mmol) was added to a two-necked flask at 25 °C under a nitrogen atmosphere. After adding 20 mmol of K₂CO₃ (100 mmol) and 0.2 mmol of Pd(PPh₃)₄, a toluene-water mixture (110 ml) (toluene to water volume ratio 5:1) was added. The mixture was heated to 110 °C and refluxed for 30 h. After cooling to 25 °C, the reaction mixture was poured into water and extracted three times with dichloromethane (50 ml). The organic phase was collected, dried over anhydrous sodium sulfate, and the solvent was removed to obtain the crude product. The crude product was then purified by silica gel column chromatography to give compound 4. 1 H NMR, 13 The C NMR and TOF-ESI+ data are as follows: 1 H NMR (500MHz, CDCl3): δ 8.28–8.24 (m, 1H), 8.00–7.94 (m, 2H), 7.66 (d, J=1.9Hz, 1H), 7.66–7.54 (m, 3H), 7.50 (dd, J=9.2, 2.4Hz, 1H), 7.45– 7.38(m, 1H), 7.14(2H), 5.17(t, J=3.8Hz, 2H), 3.96–3.82(m, 8H), 3.15(2H), 3.07–3.02(m, 1H), 3.05–2.98(m, 1H); 13 C NMR (125MHz, CDCl3): δ 137.86, 137.26, 136.46, 135.61, 134.59, 134.37, 133.80, 132.40, 132.09, 131.39, 131.34, 131.03, 129.86, 12 9.84, 129.40, 127.86, 127.42, 127.34, 125.93, 125.14, 119.77, 119.57, 104.95, 104.91, 64.93, 38.54, 38.49; TOF-ESI+(m / z): C 30 H 26 Br2O4610.34.

[0034] IV. Preparation of compound 5.

[0035] At 25°C under nitrogen atmosphere, a 0.5 mmol / mL solution of compound 4 in hexafluoroisopropanol (10 mL) was added; the mixture was then cooled to 0°C, and 0.5 mmol of trifluoromethanesulfonic acid was added. The mixture was stirred for 15 min, and the reaction was terminated with phosphate buffer at pH 7. The mixture was then extracted three times with dichloromethane (DCM), and the organic layer was collected. This organic layer was washed with saturated brine, dried over anhydrous sodium sulfate, and the solvent was removed by rotary evaporation to obtain the crude product. Further purification using silica gel column chromatography yielded compound 5. 1 H NMR, 13 The C NMR and TOF-ESI+ data are as follows: 1 H NMR (500MHz, CDCl3): δ 8.68 (d, J=1.7Hz, 1H), 8.58–8.51 (m, 3H), 8.21 (d, J=8.3Hz, 1H), 8.11 (d, J=8.8Hz, 1H), 8.03 (dd, J=9.7, 8.7Hz, 2 H), 7.95 (dd, J=9.2, 1.5Hz, 2H), 7.88 (dd, J=8.1, 2.2Hz, 1H), 7.79 (d, J=8.1Hz, 1H), 7.71 (dd, J=8.3, 2.2Hz, 2H); 13 C NMR (125MHz, CDCl3): δ 133.51, 133.28, 132.30, 132.21, 131.99, 131.86, 130.90, 130.65, 130.59, 130.09, 129.81, 129.33, 129.29, 128.90, 128.15, 127.81, 127.53, 127.42, 127.41, 127.34, 127.15, 126.93, 125.84, 122.79, 120.05, 119.69; TOF-ESI+(m / z): C 26 H 14 Br2486.21.

[0036] V. Preparation of compound 6.

[0037] At 25°C, under a nitrogen atmosphere, a toluene solution (10 mmol) containing compound 5 at a concentration of 0.1 mmol / mL was added to a three-necked flask. (11 mmol), potassium acetate (60 mmol), PdCl2(dppf)2 (0.1 mmol), heated to 100 °C and reacted for 5 h. The solvent was concentrated by rotary evaporation, and then compound 6 was obtained by silica gel column chromatography. 1 H NMR, 13 The C NMR and TOF-ESI+ data are as follows: 1 H NMR (500MHz, CDCl3): δ 8.99(d, J=1.8Hz, 1H), 8.58–8.51(m, 3H), 8.11(dd, J=8.8, 0.7Hz, 1H), 8.07–8.00(m, 2H), 7.95(dd, J=8.8, 1.3Hz, 2H), 7.91–7.77(m, 4H), 7.71(dd, J=8.4, 2.6Hz, 1H), 1.24(s, 10H); 13 C NMR (125MHz, CDCl3): δ 135.20, 133.24, 133.15, 132.80, 132.73, 132.32, 132.21, 131.99, 130.65, 130.59, 130.26, 129.81, 129.29 , 127.81, 127.66, 127.55, 127.43, 127.41, 127.34, 126.93, 126.70, 125.84, 122.83, 119.69, 83.57, 24.84; TOF-ESI+(m / z): C 32 H 26 BBrO2533.27.

[0038] VI. Preparation of Compound 7.

[0039] Compound 6 (10 mmol) was added to a two-necked flask at 25 °C under a nitrogen atmosphere. After adding 10 mmol of K₂CO₃ (50 mmol) and 0.1 mmol of Pd(PPh₃)₄, a toluene-water mixture (60 ml) (toluene to water volume ratio 5:1) was added. The mixture was heated to 110 °C and refluxed for 30 h. After cooling to 25 °C, the reaction mixture was poured into water and extracted three times with dichloromethane (50 ml). The organic layer was collected, dried over anhydrous sodium sulfate, and the solvent was removed to obtain the crude product. The crude product was then purified by silica gel column chromatography to give compound 7. 1 H NMR, 13The C NMR and TOF-ESI+ data are as follows: 1 H NMR (500MHz, CDCl3): δ 8.58–8.51(m, 3H), 8.47(d, J=1.8Hz, 1H), 8.17(d, J=8.8Hz, 1H), 8.13–8.00(m, 4H), 7.95 (dd, J=9.0, 2.1Hz, 2H), 7.88 (dd, J=8.0, 2.2Hz, 1H), 7.79 (dd, J=8.1, 0.8Hz, 1H), 7.71(d d, J=8.4, 2.6Hz, 1H), 7.60–7.54 (m, 2H), 7.20 (dt, J=8.1, 1.0Hz, 2H), 5.20 (t, J=4.9Hz, 1 H), 3.17 (td, J=5.6, 4.8Hz, 2H), 2.65 (tt, J=7.8, 1.1Hz, 2H), 1.82 (tt, J=7.9, 5.8Hz, 2H); 13 C NMR (125MHz, CDCl3): δ156.39, 142.19, 139.30, 138.39, 133.53, 133.22, 132.5 8, 132.32, 132.21, 131.99, 130.65, 130.59, 130.20, 129.81, 129.71, 129.29, 12 9.24, 127.81, 127.75, 127.67, 127.52, 127.42, 127.41, 127.34, 127.06, 126.93, 125.84, 125.31, 124.57, 122.79, 119.69, 79.54, 40.36, 33.59, 29.99, 28.30: TOF-ESI+(m / z): C 40 H 34 BrNO2640.62.

[0040] VII. Preparation of Compound 8.

[0041] At 25°C, under a nitrogen atmosphere, compound 7 (10 mmol), cuprous iodide (2 mmol), and Pd(PPh3)2Cl2 (1 mmol) were added to a two-necked flask and dissolved in anhydrous tetrahydrofuran (10 mL). After cooling to 0°C, trimethylsilylacetylene (40 mmol) and diisopropylethylamine (40 mmol) were added. Then, the temperature was raised to 60°C, and the reaction was carried out for 48 h. The mixture was extracted with diethyl ether, and the organic layer was collected. The organic layer was washed with saturated brine, dried with anhydrous sodium sulfate, filtered, and concentrated by rotary evaporation. The crude product was purified by silica gel column chromatography to obtain compound 8.1 H NMR, 13 The C NMR and TOF-ESI+ data are as follows: 1 H NMR (500MHz, CDCl3): δ 8.58–8.53(m, 3H), 8.47(d, J=1.8Hz, 1H), 8.17(d, J=8.8Hz, 1H), 8.13–8.04(m, 2H), 8.0 1(s, 1H), 8.02–7.97(m, 1H), 7.97–7.92(m, 2H), 7.91–7.85(m, 1H), 7.79(dd, J=8.1, 0.7H z, 1H), 7.61–7.54 (m, 3H), 7.20 (dq, J=8.1, 1.3Hz, 2H), 5.20 (t, J=4.9Hz, 1H), 3.17 (td, J =5.6, 4.8Hz, 2H), 2.65 (tt, J=7.8, 1.1Hz, 2H), 1.82 (tt, J=7.9, 5.8Hz, 2H), 0.25 (s, 7H); 13 C NMR (125MHz, CDCl3): δ156.39, 142.19, 139.30, 138.39, 133.53, 133.28, 132.5 8, 132.32, 131.83, 131.57, 131.01, 130.95, 130.69, 130.20, 129.71, 129.24, 12 8.42, 127.75, 127.67, 127.52, 127.43, 127.33, 127.06, 126.93, 125.84, 125.31, 124.57, 122.86, 120.92, 103.81, 100.20, 79.54, 40.36, 33.59, 29.99, 28.30; TOF-ESI+(m / z): C 45 H 43 NO2Si 657.93.

[0042] 8. Preparation of compound 9.

[0043] Compound 8 (5 mmol) was added to a round-bottom flask at 25 °C under a nitrogen atmosphere. The mixture was cooled to 0 °C, and tetrahydrofuran (25 mL) and methanol (25 mL) were added to dissolve it. K₂CO₃ (25 mmol) was then added. The mixture was heated to 25 °C and stirred for 12 h. The reaction solution was extracted with chloroform, and the organic layer was collected. This organic layer was washed three times with saturated brine, dried over anhydrous sodium sulfate, filtered, and concentrated by rotary evaporation to obtain the crude product. The crude product was purified by silica gel column chromatography to obtain compound 9. 1H NMR, 13 The C NMR and TOF-ESI+ data are as follows: 1 H NMR (500MHz, CDCl3): δ 8.60 (d, J=2.5Hz, 1H), 8.57–8.53 (m, 2H), 8.47 (d, J=1.8Hz, 1H), 8.17 (d, J=8.8Hz, 1H), 8.13–8.0 5(m, 2H), 8.05–7.97(m, 2H), 7.97–7.92(m, 2H), 7.91–7.85(m, 1H), 7.79(dd, J=8.1, 0.7Hz, 1H), 7. 60 (dd, J=6.8, 2.2Hz, 1H), 7.60–7.54 (m, 2H), 7.20 (dt, J=8.1, 1.0Hz, 2H), 5.20 (t, J=4.9Hz, 1H), 3 .28(s, 1H), 3.17(td, J=5.6, 4.8Hz, 2H), 2.65(tt, J=7.8, 1.1Hz, 2H), 1.82(tt, J=7.9, 5.8Hz, 2H); 13 C NMR (125MHz, CDCl3): δ 156.39, 142.19, 139.30, 138.39, 133.53, 133.28, 132.58, 132.34, 132.32, 132.08, 131.71, 131.07, 130.75, 130.69, 130.20, 129.71, 129.24, 127.75, 127.67, 127.52, 127.46, 127.43, 127.33, 127.06, 126.93, 125.84, 125.31, 124.57, 122.86, 119.98, 79.54, 78.93, 78.30, 40.36, 33.59, 29.99, 28.30; TOF-ESI+(m / z): C 42 H 35 NO2585.75.

[0044] IX. Preparation of compound 10.

[0045] At 25°C, under a nitrogen atmosphere, compound 7 (5 mmol), cuprous iodide (1 mmol), and Pd(PPh3)2Cl2 (0.5 mmol) were added to a two-necked flask. Anhydrous tetrahydrofuran (10 mL) was then added to dissolve the compounds, resulting in a mixed solution. The solution was cooled to 0°C, and then compound 9 (50 mmol) and diisopropylethylamine (20 mmol) were added. The mixture was heated to 60°C and reacted for 48 h. The reaction solution was extracted with diethyl ether, and the organic layer was collected. This organic layer was washed with saturated brine, dried over anhydrous sodium sulfate, filtered, and concentrated by rotary evaporation to obtain the crude product. The crude product was purified by silica gel column chromatography to obtain compound 10. 1 H NMR, 13 The C NMR and TOF-ESI+ data are as follows: 1 H NMR (500MHz, CDCl3): δ 8.58(d, J=2.0Hz, 1H), 8.56–8.53(m, 2H), 8.47(d, J=1.8Hz, 1H), 8.17(d, J=8.8Hz, 1H), 8. 13–8.04 (m, 2H), 8.02 (s, 1H), 8.02–7.97 (m, 1H), 7.97–7.92 (m, 2H), 7.91–7.85 (m, 1H), 7.7 9(dd, J=8.1, 0.7Hz, 1H), 7.61–7.54(m, 3H), 7.20(dt, J=8.1, 1.0Hz, 2H), 5.20(t, J=4.9Hz, 1H), 3.17 (td, J=5.6, 4.8Hz, 2H), 2.65 (tt, J=7.8, 1.1Hz, 2H), 1.82 (tt, J=7.9, 5.8Hz, 2H); 13 C NMR (125MHz, CDCl3): δ 156.39, 142.19, 139.30, 138.39, 133.53, 133.28, 132.58, 132.37, 132.3 2, 131.93, 131.71, 130.99, 130.70, 130.69, 130.20, 129.71, 129.24, 127. 75, 127.67, 127.55, 127.52, 127.43, 127.33, 127.06, 126.93, 125.84, 125.31, 124.57, 122.86, 120.58, 89.52, 79.54, 40.36, 33.59, 29.99, 28.30; TOF-ESI+(m / z): C 82 H 68 N2O4 1145.46.

[0046] 10. Preparation of compound 11.

[0047] At 25°C and under a nitrogen atmosphere, compound 10 (1 mmol) and a 50% (v / v) trifluoroacetic acid solution in dichloromethane (10 mL) were added to a two-necked flask. After stirring for 2 h, a saturated sodium bicarbonate solution was added, and the mixture was extracted and repeatedly washed until neutral. The collected organic layer was rotary evaporated to remove the solvent, yielding compound 11. 1 H NMR, 13 The C NMR and TOF-ESI+ data are as follows: 1 H NMR (500MHz, CDCl3): δ 8.58(d, J=2.1Hz, 1H), 8.56–8.53(m, 2H), 8.47(d, J=1.8Hz, 1H), 8.17(d, J=8.8Hz, 1H), 8. 13–8.05(m, 2H), 8.05–7.97(m, 2H), 7.97–7.92(m, 2H), 7.88(dd, J=8.1, 2.1Hz, 1H), 7.79( dd, J=8.0, 0.8Hz, 1H), 7.61–7.54 (m, 3H), 7.20 (dt, J=8.1, 1.0Hz, 2H), 2.77 (tt, J=6.3, 5. 4Hz, 2H), 2.65 (tt, J=7.6, 1.1Hz, 2H), 1.83 (tt, J=7.7, 5.4Hz, 2H), 1.60 (d, J=12.6Hz, 1H); 13 C NMR (125MHz, CDCl3): δ141.74, 139.30, 138.39, 133.53, 133.28, 132.58, 132.37, 132.32, 131.93, 131.71, 130.99, 130.70, 130.69, 130.20, 129.71 , 129.21, 127.75, 127.67, 127.55, 127.52, 127.43, 127.33, 127.06, 126. 93, 125.84, 125.31, 124.57, 122.86, 120.58, 89.52, 41.70, 33.91, 33.06; TOF-ESI+(m / z): C 72 H 52 N2945.22.

[0048] Example 2 The process for fabricating a capacitive-inductive dual-function device based on helixene molecules is as follows: 1. Fabrication of an aluminum oxide dielectric layer on a silicon substrate.

[0049] Photoresist is spin-coated onto a 1cm×1cm silicon wafer (silicon substrate). A photolithography machine is used to place a mask on the spin-coated silicon wafer for photolithography. After photolithography, the silicon wafer is transferred to a vacuum thermal evaporation chamber to deposit chromium with a thickness of 6-9nm and gold with a thickness of 30-35nm to obtain the lead electrode. Photoresist is spin-coated again onto the lead electrode and placed on the stage of the photolithography machine. The mask is replaced to perform photolithography on the gate to obtain the bottom gate. After the bottom gate is prepared, a 30-40nm aluminum film is deposited on the surface of the bottom gate by vacuum thermal evaporation. Then, the bottom gate is immersed in an acetone solution to remove the photoresist and obtain an aluminum oxide dielectric layer.

[0050] II. A graphene dielectric layer is prepared on an alumina dielectric layer, and a metal electrode is prepared on the graphene dielectric layer.

[0051] Monolayer graphene was obtained on a clean copper foil using chemical vapor deposition. Methyl methacrylate (PMMA 950) was spin-coated onto the monolayer graphene, and then baked at 180°C for 2 minutes. Excess PMMA and graphene on the back side were removed by oxygen plasma etching for 3 seconds to obtain a PMMA-monolayer graphene-copper foil. The PMMA-monolayer graphene-copper foil was then cut into small pieces and transferred to a ferric chloride solution to dissolve the copper foil, yielding a PMMA-monolayer graphene film. The PMMA-monolayer graphene film was then immersed in hydrochloric acid solution, aqueous solution, and potassium hydroxide solution before being transferred onto an alumina dielectric layer. After standing, drying, and desizing, a graphene dielectric layer was obtained. Photolithography strips are formed on the graphene dielectric layer, and excess monolayer graphene is removed by oxygen plasma etching to obtain a substrate with graphene strips; electrodes are photolithographically formed on the substrate, and 8-10 nm chromium and 60-80 nm gold are deposited by vapor deposition to obtain metal electrodes.

[0052] III. Constructing graphene point electrodes using graphene dielectric layers.

[0053] Photoresist is spin-coated onto a substrate with graphene strips on the photolithographically lithographically patterned electrodes. A custom strip mask is used to lithographically pattern the graphene strips. After exposure and development, the remaining strip-shaped photoresist protects part of the graphene. This is then subjected to a 5s oxygen plasma etching process, while the exposed graphene is removed by the oxygen plasma etching. The photoresist is then removed by immersion in acetone to obtain a substrate with a central graphene stripe. 8-10 nm chromium and 60-80 nm gold are successively deposited onto this substrate using thermal evaporation. The photoresist is then removed by immersion in acetone to obtain a graphene array electrode. A 150 nm long and 5 nm wide dashed line is etched onto this graphene array electrode using electron beam lithography. The electrode is then developed using methyl isobutyl ketone (MIBK) diluted with isopropanol (MIBK to isopropanol volume ratio 1:3), fixed with isopropanol, and finally lithographically etched by oxygen plasma and electrically ablated to obtain a graphene nano-gap electrode array.

[0054] In this embodiment, the graphene nano-gap electrode array includes 169 pairs of graphene point electrodes.

[0055] Fourth, individual helicene molecules are self-assembled with graphene point electrode pairs to obtain a dual-function capacitive and inductive device based on helicene molecules.

[0056] At 25℃, 16.5 mg of helicene molecules were added to a three-necked flask, followed by 10 ml of anhydrous pyridine to dissolve the helicene molecules. Then, a graphene point electrode pair was placed in the three-necked flask, and 30 mg of 1-(3-dimethylaminopropyl)-3-2-ethylcarbodiimide hydrochloride was added. Under a nitrogen atmosphere, the reaction was carried out for 48 h to allow the –NH2 at both ends of the helicene molecules to form amide covalent bonds with the –COOH at the ends of the graphene point electrodes. The device was removed from the three-necked flask, rinsed three times with deionized water and ethanol, and dried with nitrogen for later use. This yielded a dual-function capacitive and inductive device based on helicene molecules. The current-voltage (IV) characteristic curves of the device were measured by applying alternating currents with different voltage change rates, as follows: A capacitive-inductive dual-function device based on helixene molecules was placed on the photodetector stage of a Physical Property Measurement System (PPMS). Electrical probes were connected to the two metal electrodes of the device to form an electrical circuit. Tests were conducted using alternating current with different voltage change rates (0.1V / s, 1V / s, 10V / s, and 100V / s). The results are as follows: Figure 3As shown in the figure, when the voltage change rate is 1V / s, the current response exhibits a significant current hysteresis effect, meaning the current drops to zero at a non-zero positive voltage. This demonstrates the characteristics of an inductor, where the voltage reaches its minimum value faster than the current. The current hysteresis effect continues to be observed when the voltage change rate decreases to 0.1V / s. However, when the voltage change rate increases to 10V / s, the current lead effect replaces the current hysteresis effect, and the current drops to zero at a non-zero negative voltage, demonstrating the characteristics of a capacitor. By further increasing the device frequency to 100V / s, the current advance becomes even more pronounced, and an almost pure monomolecular capacitor is obtained.

[0057] Current-voltage (IV) relationship of a helene-based dual-function capacitive-inductive device at different scan rates, such as Figure 4 As shown, compared to the zero point indicated by the dashed line in the figure, at low scan rates (e.g., 0.1V / s), the change in current lags behind the change in voltage. Specifically, when the voltage increases from a negative value to a positive value, the current begins to rise before the voltage reaches zero, but the voltage is not completely zero when it reaches zero; the positive scan curve appears to the right of the dashed line. This lag is a typical characteristic of inductors, indicating that charge is mainly transported through the helical conjugated backbone of molecules, similar to the ring current in an inductor. At high scan rates (e.g., 100V / s), the change in current precedes the change in voltage. Specifically, when the voltage decreases from a positive value to a negative value, the current begins to decrease before the voltage reaches zero, and the voltage is not completely zero when the current reaches zero; the reverse scan curve appears to the right of the dashed line. This leading phenomenon is a typical characteristic of capacitors, indicating that charge is mainly transported through the π-π stacking path within molecules, similar to the electric field effect in a capacitor.

[0058] From the above test results, it can be seen that the dual-function capacitor-inductor device based on helene molecules provided by the present invention possesses the characteristics of both a capacitor and an inductor.

[0059] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A device with dual capacitive and inductive functions based on helene molecules, characterized in that, The system includes a first graphene point electrode, a helicene molecule, and a second graphene point electrode. The first and second graphene point electrodes form a graphene point electrode pair, and the helicene molecule is connected between the graphene point electrode pairs. The structural formula of the helicene molecule is shown below: ； By changing the rate of change of the alternating current applied to the helicene molecule, the helicene molecule can switch between capacitive and inductive effects; When the voltage change rate of the alternating current is 0.1 to 1.0 V / s, the helicene molecule exhibits an inductive effect; when the voltage change rate of the alternating current is greater than or equal to 10 V / s, the helicene molecule exhibits a capacitive effect. A single helicene molecule is connected between the first graphene point electrode and the second graphene point electrode.

2. The capacitive-inductive dual-function device based on helene molecules as described in claim 1, characterized in that, The first graphene point electrode and the second graphene point electrode are monolayer graphene point electrodes.

3. The capacitive-inductive dual-function device based on helene molecules as described in claim 1, characterized in that, The first graphene point electrode and the second graphene point electrode are array electrodes.

4. The capacitive-inductive dual-function device based on helene molecules as described in claim 3, characterized in that, The first graphene point electrode and the second graphene point electrode are nano-gap electrodes.

5. A method for fabricating a capacitive-inductive dual-function device based on helixene molecules, characterized in that, The method for fabricating a capacitive-inductive dual-function device based on helixene molecules as described in any one of claims 1 to 4 comprises the following steps: S100. A metal oxide dielectric layer is prepared on a substrate using a thermal evaporation method. S200. Prepare a single layer of graphene on a copper foil using a vapor deposition method, and transfer the single layer of graphene onto the metal oxide dielectric layer to obtain a graphene dielectric layer. S300. Using oxygen plasma etching and electrical burn-off method, graphene point electrode pairs are prepared on the graphene dielectric layer. S400. The graphene point electrode pair is placed in a pyridine solution containing helicene molecules and a condensing agent, so that the helicene molecules and the graphene point electrode pair self-assemble to obtain a device with dual capacitive and inductive functions based on helicene molecules.

6. The method for fabricating a capacitive-inductive dual-function device based on helene molecules as described in claim 5, characterized in that, In step S100, the metal oxide dielectric layer is selected from the aluminum oxide dielectric layer.

7. The method for fabricating a capacitive-inductive dual-function device based on helene molecules as described in claim 6, characterized in that, The thickness of the alumina dielectric layer is 30–40 nm.

8. The method for fabricating a capacitive-inductive dual-function device based on helene molecules as described in claim 5, characterized in that, In step S100, the substrate is selected from silicon wafers.

9. The method for fabricating a capacitive-inductive dual-function device based on helene molecules as described in claim 5, characterized in that, In step S400, the synthetic route for the helicene molecule is as follows: 。 10. The method for fabricating a capacitive-inductive dual-function device based on helene molecules as described in claim 5, characterized in that, In step S400, the condensing agent is selected from 1-(3-dimethylaminopropyl)-3-2-ethylcarbodiimide hydrochloride.

Images