High-voltage ceramic capacitor and manufacturing method thereof

Abstract

The invention provides a high-voltage ceramic capacitor and a manufacturing method thereof, and relates to the technical field of electronic materials, the high-voltage ceramic capacitor comprises a ceramic dielectric layer and an electrode layer, the ceramic dielectric layer is prepared from the following raw materials in percentage by weight: 85% of barium titanate (BaT iO3), 10% of barium zirconate (BaZrO3), 3% of yttrium oxide (Y2O3) and 2% of niobium pentoxide (Nb2O5), by optimizing the formula and the preparation process of the ceramic dielectric layer, the dielectric constant of the high-voltage ceramic capacitor is remarkably improved, the high-voltage ceramic capacitor has excellent voltage resistance, reliable operation of equipment under a high-voltage condition is ensured, the risk of faults caused by voltage fluctuation is reduced, and the service life of the high-voltage ceramic capacitor is prolonged. In addition, the multi-layer metallized electrode structure effectively improves the mechanical properties of the electrode and the ceramic dielectric layer, improves the tensile strength of the electrode and the pin part, and improves the overall reliability of the capacitor.

Description

TECHNICAL FIELD

[0001] The present application belongs to the technical field of electronic materials, more specifically, relates to a high-voltage ceramic capacitor and a manufacturing method thereof. BACKGROUND

[0002] In today's era of rapid development of electronic technology, high-voltage ceramic capacitors, as key electronic components, play an indispensable role in many fields. However, with the continuous improvement of the performance of electronic devices, the requirements for high-voltage ceramic capacitors are becoming increasingly stringent.

[0003] Traditional high-voltage ceramic capacitors have many limitations in terms of materials and manufacturing processes. In terms of ceramic dielectric materials, the commonly used formula often has difficulty in achieving both high dielectric constant and excellent voltage resistance performance. Insufficient dielectric constant limits the energy storage density of the capacitor, which cannot meet the demand of modern electronic devices for miniaturization and high energy storage; and the lack of voltage resistance performance makes the reliability of the capacitor under high voltage environment greatly discounted, which is prone to failure, affecting the normal operation of the entire electronic system.

[0004] The electrode structure and material are also important factors affecting the performance of the capacitor. The previous electrode design has shortcomings in terms of conductivity, corrosion resistance and bonding strength with the ceramic dielectric layer. Poor conductivity will increase resistance loss and reduce the efficiency of the capacitor; poor corrosion resistance shortens the service life of the capacitor; and poor bonding is prone to electrode shedding and other problems during use, further affecting the performance and reliability of the capacitor.

[0005] In terms of manufacturing process, the existing method has problems such as insufficient precision and insufficient strict control, which makes it difficult to ensure the stability and consistency of product quality. The control of temperature, pressure, time and other parameters in the production process is not accurate enough, resulting in uneven performance of the capacitor, high scrap rate, which not only increases the production cost, but also limits its application in high-end fields.

[0006] In addition, the existing high-voltage ceramic capacitors have large performance fluctuations when the temperature changes, which cannot meet the needs of some special environments. At the same time, with the improvement of environmental protection requirements, some materials and process methods used in traditional manufacturing processes also face environmental pressure.

[0007] In summary, in order to meet the needs of the continuous development of electronic technology, solve the problems of performance, reliability, stability and other aspects of existing high-voltage ceramic capacitors, an innovative high-voltage ceramic capacitor and its manufacturing method are urgently needed to improve its overall performance, adapt to a wider range of application scenarios, and promote the further development of electronic technology. SUMMARY

[0008] To solve the above technical problems, the present application provides a high-voltage ceramic capacitor and a manufacturing method thereof to solve the above problems.

[0009] The manufacturing method of the high-voltage ceramic capacitor comprises two steps of ceramic dielectric layer preparation and electrode layer preparation, wherein the ceramic dielectric layer preparation comprises the following steps:

[0010] S1: weigh barium titanate (BaTiO3), barium zirconate (BaZrO3), yttrium oxide (Y2O3) and niobium pentoxide (Nb2O5) into a ball mill, add deionized water, and ball mill for 14 hours to fully mix the raw materials uniformly;

[0011] S2: place the mixed material in a crucible and put it into a pre-sintering furnace for pre-sintering treatment at 950℃ for 2.5 hours;

[0012] S3: after pre-sintering, the material is crushed, a binder is added for granulation, and then a dry pressing process is adopted to press at a pressure of 10-20 MPa for 0.5-1 minute to form a ceramic green body;

[0013] S4: place the ceramic green body into a high-temperature sintering furnace and sinter at 1250℃ for 5 hours to obtain a dense ceramic dielectric layer;

[0014] The electrode layer preparation comprises the following steps:

[0015] A1: place the prepared ceramic dielectric layer into the vacuum chamber of a magnetron sputtering device, and first deposit a silver layer by sputtering;

[0016] A2: continue to deposit a nickel layer on the silver layer by sputtering;

[0017] A3: form an electrode layer by alternately depositing silver and nickel layers in the order of silver-nickel.

[0018] Preferably, the electrode layer formed in A3 is a multilayer metallization structure with silver and nickel layers alternately stacked, and the total thickness is controlled to be 5-10 μm.

[0019] Preferably, the heating rate of the pre-sintering treatment in S2 is 5℃ / min, the sputtering power in A1 is 100-150 W, the sputtering time is 15-20 minutes, the sputtering power in A2 is 80-120 W, and the sputtering time is 10-15 minutes.

[0020] Preferably, the ball milling time of the ceramic dielectric layer in S1 is 12-16 hours, and the rotation speed of the ball mill is 300-500 rpm.

[0021] Preferably, it further comprises a post-processing step: placing the capacitor with the electrode layer into an annealing furnace for annealing treatment at 550℃ for 1.5 hours, and the heating rate of the annealing treatment is 3℃ / min.

[0022] Preferably, the sputtered silver layer and the nickel layer in A1 and A2 have thicknesses of 1-2 μm and 0.5-1 μm, respectively.

[0023] Preferably, in S1, the amount of deionized water added is 30%-40% of the total mass of the raw materials, and the ratio of the material ball in the ball milling process is 1:2-1:3.

[0024] Preferably, in S3, the amount of binder added is 5%-8% of the mass of the material after pre-burning, and the particle size of the granulated particles is 100-200 mesh.

[0025] Preferably, in S1, the weight percentages of barium titanate (BaTiO3), barium zirconate (BaZrO3), yttrium trioxide (Y2O3), and niobium pentoxide (Nb2O5) are 85%, 10%, 3%, and 2%, respectively.

[0026] Preferably, the high-voltage ceramic capacitor prepared by the method has a dielectric constant greater than 5000 at a working voltage of 1000 V, a dielectric constant change rate less than 5% at an ambient temperature of 25℃, a dielectric constant greater than 4000 at a frequency of 500 Hz, and a dielectric constant change rate less than 8% after being placed in an environment of 85℃ and 85% relative humidity for 1000 hours.

[0027] Compared with the prior art, the present application has the following beneficial effects:

[0028] 1. The ceramic dielectric layer formula significantly improves the dielectric constant and voltage resistance of the capacitor, enabling it to operate stably in a higher voltage environment and expanding the application range of the capacitor.

[0029] 2. The multilayer metallized electrode structure with silver and nickel stacked alternately improves the conductivity and corrosion resistance of the electrode, reduces resistance loss, prolongs the service life of the capacitor, and effectively improves the mechanical properties of the electrode and the ceramic dielectric layer in the multilayer metallized electrode structure, thereby improving the tensile strength of the electrode and pin portion, improving the overall reliability of the capacitor, and reducing the risk of failure during use. While improving performance, reasonable material selection and process optimization control production costs, improving the market competitiveness of the product. DETAILED DESCRIPTION

[0030] The embodiments of the present application will be further described in detail below with reference to the examples. The following examples are used to illustrate the present application, but cannot be used to limit the scope of the present application.

[0031] High-voltage ceramic capacitors have a wide range of applications in the field of modern electronic technology, such as power systems, electronic devices, and communication, etc. The present application provides a high-voltage ceramic capacitor with excellent performance and a manufacturing method thereof, which significantly improves the dielectric properties, voltage resistance, service life and reliability of the capacitor by optimizing the material formula and preparation process of the ceramic dielectric layer and the electrode layer.

[0032] To better illustrate the technical solutions and effects of the present application, the following will be described in detail in combination with a plurality of specific embodiments:

[0033] Embodiment 1:

[0034] Preparation of the ceramic dielectric layer:

[0035] Take 85g of barium titanate (BaTiO3), 10g of barium zirconate (BaZrO3), 3g of yttrium trioxide (Y2O3), and 2g of niobium pentoxide (Nb2O5), and put them into a ball mill. Add 30g of deionized water, and ball mill at a speed of 300 revolutions per minute for 12 hours. Put the mixed material into a crucible, and put it into a pre-burning furnace. Increase the temperature to 950℃ at a rate of 5℃ / min, and keep it at this temperature for 2.5 hours for pre-burning treatment. After pre-burning, crush the material, add 5g of binder for granulation, and then use dry pressing forming process to press at a pressure of 10MPa for 0.5 minutes to form a ceramic green body. Put the ceramic green body into a high-temperature sintering furnace, and sinter it at 1250℃ for 5 hours to obtain a dense ceramic dielectric layer.

[0036] Preparation of the electrode layer:

[0037] Put the prepared ceramic dielectric layer into the vacuum chamber of a magnetron sputtering device. First, sputter deposit a silver layer with a thickness of 1μm at a sputtering power of 100W for 15 minutes. Continue to sputter deposit a nickel layer with a thickness of 0.5μm on the silver layer at a sputtering power of 80W for 10 minutes. Alternate the deposition of silver and nickel layers 5 times in the order of silver layer-nickel layer to form an electrode layer with a total thickness of 5μm.

[0038] Post-processing: Put the capacitor with the electrode layer into an annealing furnace, and increase the temperature to 550℃ at a rate of 3℃ / min, and keep it at this temperature for 1.5 hours for annealing treatment.

[0039] Embodiment 2:

[0040] Preparation of the ceramic dielectric layer:

[0041] Take 85 g of barium titanate (BaTiO3), 10 g of barium zirconate (BaZrO3), 3 g of yttrium trioxide (Y2O3) and 2 g of niobium pentoxide (Nb2O5), put them into a ball mill, add 35 g of deionized water, and mill at a speed of 400 revolutions per minute for 14 hours. Put the mixed material into a crucible, put it into a pre-sintering furnace, and heat it to 950°C at a heating rate of 5°C / min, and keep it at this temperature for 2.5 hours for pre-sintering treatment. After pre-sintering, the material is crushed, 6.5 g of binder is added for granulation, and then a dry pressing process is used to press the ceramic green body under a pressure of 15 MPa for 1 minute. The ceramic green body is placed in a high-temperature sintering furnace and sintered at 1250°C for 5 hours to obtain a dense ceramic dielectric layer.

[0042] Electrode layer preparation:

[0043] The prepared ceramic dielectric layer is placed in the vacuum chamber of a magnetron sputtering device. First, a silver layer with a thickness of 1.5 μm is sputter deposited at a sputtering power of 125 W for 18 minutes. Then, a nickel layer with a thickness of 0.8 μm is sputter deposited on the silver layer at a sputtering power of 100 W for 13 minutes. The silver layer-nickel layer is alternately deposited 7 times to form an electrode layer with a total thickness of 8 μm.

[0044] Post-processing: The capacitor with the electrode layer is placed in an annealing furnace and heated to 550°C at a heating rate of 3°C / min, and annealed for 1.5 hours.

[0045] Example 3:

[0046] Ceramic dielectric layer preparation:

[0047] Take 85 g of barium titanate (BaTiO3), 10 g of barium zirconate (BaZrO3), 3 g of yttrium trioxide (Y2O3) and 2 g of niobium pentoxide (Nb2O5), put them into a ball mill, add 40 g of deionized water, and mill at a speed of 500 revolutions per minute for 16 hours. Put the mixed material into a crucible, put it into a pre-sintering furnace, and heat it to 950°C at a heating rate of 5°C / min, and keep it at this temperature for 2.5 hours for pre-sintering treatment. After pre-sintering, the material is crushed, 8 g of binder is added for granulation, and then a dry pressing process is used to press the ceramic green body under a pressure of 20 MPa for 1 minute. The ceramic green body is placed in a high-temperature sintering furnace and sintered at 1250°C for 5 hours to obtain a dense ceramic dielectric layer.

[0048] Electrode layer preparation:

[0049] The prepared ceramic dielectric layer was placed in the vacuum chamber of a magnetron sputtering device, a silver layer with a thickness of 2 μm was first sputtered and deposited, the sputtering power was 150 W, and the sputtering time was 20 minutes. A nickel layer with a thickness of 1 μm was continuously sputtered and deposited on the silver layer, the sputtering power was 120 W, and the sputtering time was 15 minutes. The silver layer-nickel layer was alternately deposited 10 times in order to form an electrode layer with a total thickness of 10 μm of a multilayer metallized structure.

[0050] Post-processing: The capacitor with the electrode layer was placed in an annealing furnace, and the temperature was raised to 550℃ at a rate of 3℃ / min, and annealing treatment was carried out for 1.5 hours.

[0051] Comparative Example 1:

[0052] A conventional ceramic dielectric formula (containing only barium titanate) and a common electrode structure (a single silver layer) were used, and the preparation was carried out according to the conventional manufacturing process parameters.

[0053] Comparative Example 2:

[0054] A ceramic dielectric composition similar to the present application was used, but the manufacturing process parameters were not accurately controlled, such as the pre-sintering temperature, sintering temperature and time, etc.

[0055] Experimental Example:

[0056] The high-voltage ceramic capacitors prepared in Examples 1-3 and Comparative Examples 1-2 were tested for performance, and the test results are shown in the following table:

[0057]

[0058] From the above data comparison, it can be seen that:

[0059] The dielectric constant of Examples 1-3 using the ceramic dielectric layer formula and manufacturing method of the present application is significantly higher than that of Comparative Examples 1 and 2, and the dielectric constant change rate at different temperatures is smaller, indicating that the present application can improve the dielectric performance and temperature stability of the capacitor;

[0060] The voltage resistance of the capacitor in the examples is significantly higher than that of the comparative examples, indicating that the manufacturing method of the present application can enhance the voltage resistance performance of the capacitor, so that it can stably operate in a higher voltage environment, and expand the application range;

[0061] The equivalent series resistance of the capacitor in the examples is smaller than that of the comparative examples, which reduces the resistance loss and improves the performance of the capacitor;

[0062] The service life of the capacitor in the examples is much longer than that of the comparative examples, which reflects that the multilayer metallized electrode structure of silver and nickel alternately stacked and the optimized post-processing steps in the present application can effectively prolong the service life of the capacitor.

[0063] The differences among the embodiments 1, 2 and 3 mainly lie in:

[0064] 1. Preparation of the ceramic dielectric layer:

[0065] Deionized water addition: 30 g for the embodiment 1, 35 g for the embodiment 2 and 40 g for the embodiment 3;

[0066] Ball milling speed and time: 300 rpm for 12 hours for the embodiment 1, 400 rpm for 14 hours for the embodiment 2 and 500 rpm for 16 hours for the embodiment 3;

[0067] Binder addition: 5 g for the embodiment 1, 6.5 g for the embodiment 2 and 8 g for the embodiment 3;

[0068] Dry pressing process parameters: 10 MPa for 5 minutes for the embodiment 1, 15 MPa for 8 minutes for the embodiment 2 and 20 MPa for 10 minutes for the embodiment 3.

[0069] 2. Preparation of the electrode layer:

[0070] Sputtering parameters for the silver and nickel layers: 1 μm thickness, 100 W sputtering power and 15 minutes sputtering time for the silver layer and 0.5 μm thickness, 80 W sputtering power and 10 minutes sputtering time for the nickel layer in the embodiment 1; 1.5 μm thickness, 125 W sputtering power and 18 minutes sputtering time for the silver layer and 0.8 μm thickness, 100 W sputtering power and 13 minutes sputtering time for the nickel layer in the embodiment 2; 2 μm thickness, 150 W sputtering power and 20 minutes sputtering time for the silver layer and 1 μm thickness, 120 W sputtering power and 15 minutes sputtering time for the nickel layer in the embodiment 3;

[0071] Total thickness of the electrode layer: 5 μm for the embodiment 1, 8 μm for the embodiment 2 and 10 μm for the embodiment 3.

[0072] The embodiments 1, 2 and 3 have no difference in post-treatment. In the three embodiments, the post-treatment is to put the capacitor with the electrode layer into an annealing furnace, to heat up to 550 °C at a heating rate of 3 °C / min and to anneal for 1.5 hours.

[0073] wherein:

[0074] The difference in the preparation of the ceramic dielectric layer:

[0075] Different deionized water addition: affects the mixing degree and fluidity of the materials in the ball milling process, thereby possibly affecting the uniformity of the raw materials and the effect of the subsequent treatment;

[0076] Difference in ball milling speed and time: Changes in speed and time can affect the degree of refinement and mixing uniformity of the raw materials, which in turn affect the microstructure and performance of the ceramic dielectric layer.

[0077] Difference in binder addition amount: Different addition amounts can affect the granulation effect and the forming quality of the ceramic green body, which may affect the density and performance of the final ceramic dielectric layer.

[0078] Changes in dry pressing process parameters: Differences in pressure and holding time can affect the density and strength of the ceramic green body, which in turn affect the performance of the final ceramic dielectric layer.

[0079] Different effects on the preparation of electrode layers:

[0080] Sputtering parameters of silver and nickel layers (thickness, power, time): Changes in these parameters can affect the deposition quality, thickness uniformity, and adhesion of the silver and nickel layers, which in turn affect the electrical conductivity, corrosion resistance, and adhesion strength of the electrode layer. As seen from the electrode break stress test data, with the increase in the sputtering thickness and number of layers of silver and nickel in the multi-layer metallized electrode, the electrode break stress gradually increases, i.e., the mechanical properties of the electrode gradually improve.

[0081] Difference in total thickness of electrode layers: Changes in thickness can affect the electrical properties such as capacitance and resistance of the capacitor, as well as the reliability and service life of the electrode layer.

[0082] The present application provides a high-voltage ceramic capacitor with excellent performance and a manufacturing method thereof. By optimizing the material formulation and preparation process of the ceramic dielectric layer and the electrode layer, the performance of the capacitor is significantly improved.

[0083] In the preparation of the ceramic dielectric layer, Example 1 uses 85g of barium titanate, 10g of barium zirconate, 3g of yttrium trioxide, and 2g of niobium pentoxide, with the addition of 30g of deionized water, a ball milling speed of 300 revolutions per minute, and a ball milling time of 12 hours. Example 2 uses 35g of deionized water, a ball milling speed of 400 revolutions per minute, and a ball milling time of 14 hours. Example 3 uses 40g of deionized water, a ball milling speed of 500 revolutions per minute, and a ball milling time of 16 hours. In the dry pressing process, Example 1 uses a pressure of 10MPa and a holding time of 5 minutes, Example 2 uses a pressure of 15MPa and a holding time of 8 minutes, and Example 3 uses a pressure of 20MPa and a holding time of 10 minutes.

[0084] In the preparation of the electrode layer, Example 1 uses a silver layer thickness of 1μm, a sputtering power of 100W, and a sputtering time of 15 minutes, a nickel layer thickness of 0.5μm, a sputtering power of 80W, and a sputtering time of 10 minutes, with a total thickness of 5μm. Example 2 uses a silver layer thickness of 1.5μm, a sputtering power of 125W, and a sputtering time of 18 minutes, a nickel layer thickness of 0.8μm, a sputtering power of 100W, and a sputtering time of 13 minutes, with a total thickness of 8μm. Example 3 uses a silver layer thickness of 2μm, a sputtering power of 150W, and a sputtering time of 20 minutes, a nickel layer thickness of 1μm, a sputtering power of 120W, and a sputtering time of 15 minutes, with a total thickness of 10μm.

[0085] The capacitors prepared in Examples 1-3 and Comparative Examples 1-2 were tested for performance, and the results showed that the dielectric constant of Example 1 reached 5500 at 1000V and 25℃, the dielectric constant variation rate was 3%, the withstand voltage was 5000V, the equivalent series resistance was 0.08Ω, and the service life was 10000 hours; the dielectric constant of Example 2 was 6000, the variation rate was 2%, the withstand voltage was 5500V, the resistance was 0.06Ω, and the service life was 12000 hours; the dielectric constant of Example 3 was 6500, the variation rate was 1%, the withstand voltage was 6000V, the resistance was 0.05Ω, and the service life was 15000 hours. The dielectric constant of Comparative Example 1 was only 3000, the variation rate was 10%, the withstand voltage was 3000V, the resistance was 0.2Ω, and the service life was 5000 hours; the dielectric constant of Comparative Example 2 was 4000, the variation rate was 8%, the withstand voltage was 4000V, the resistance was 0.15Ω, and the service life was 8000 hours.

[0086] The data clearly show that the examples of the present application are significantly superior to the comparative examples in terms of dielectric constant, temperature stability, withstand voltage capability, equivalent series resistance, and service life, etc. key performance indicators. This fully proves that the ceramic dielectric layer formula and manufacturing method of the present application, as well as the silver and nickel alternating stacked multilayer metallized electrode structure and the optimized post-processing steps, can effectively improve the performance of high-voltage ceramic capacitors, and has broad application prospects and market value.

[0087] In addition, the materials used in the present application are common and easy to obtain raw materials, and the manufacturing process is also innovative and optimized on the basis of existing technology, without the need to introduce complex and expensive equipment and technology, with good economy and feasibility.

[0088] In summary, the high-voltage ceramic capacitor and its manufacturing method of the present application provide an innovative, efficient, reliable and economical solution for the field of electronic materials. It not only meets the growing demand for high-performance high-voltage capacitors in modern electronic devices, but also brings new opportunities and breakthroughs for the development of related industries. In the future, with the continuous progress of electronic technology and the expansion of application fields, the present application is expected to play an important role in more fields and promote the development of the entire industry to a higher level.

[0089] The embodiments of the present application are given for the purpose of illustration and description, and are not exhaustive or limit the present application to the disclosed form. Many modifications and variations will be apparent to those of ordinary skill in the art. The embodiments are chosen and described in order to better illustrate the principles and practical applications of the present application, and to enable those of ordinary skill in the art to understand the present application in order to design various embodiments with various modifications for specific purposes.

Claims

1. A method of manufacturing a high voltage ceramic capacitor, characterized by, The method comprises two steps of ceramic medium layer preparation and electrode layer preparation, wherein the ceramic medium layer preparation comprises the following steps: S1: Put barium titanate (BaTiO3), barium zirconate (BaZrO3), yttrium trioxide (Y2O3) and niobium pentoxide (Nb2O5) into a ball mill, add deionized water, and ball mill for 14 hours; S2: Put the mixed material into a crucible and put it into a pre-sintering furnace for pre-sintering treatment at 950℃ for 2.5 hours; S3: After pre-sintering, the material is crushed, a binder is added for granulation, and then a dry pressing process is adopted to press at a pressure of 10-20MPa for 5-10 minutes to form a ceramic green body; S4: Put the ceramic green body into a high-temperature sintering furnace and sinter at 1350℃ for 5 hours to obtain a dense ceramic medium layer; The electrode layer preparation comprises the following steps: A1: Put the prepared ceramic medium layer into the vacuum chamber of a magnetron sputtering device, and first deposit a silver layer by sputtering; A2: Continue to deposit a nickel layer on the silver layer by sputtering; A3: Form an electrode layer by alternately depositing silver and nickel layers in the order of silver-nickel.

2. The method of manufacturing a high voltage ceramic capacitor of claim 1, wherein, The electrode layer formed in A3 is a multilayer metallization structure with silver and nickel layers stacked alternately, and the total thickness is controlled to be 5-10μm.

3. The method of manufacturing a high voltage ceramic capacitor of claim 1, wherein, The heating rate of the pre-sintering treatment in S2 is 5℃ / min, the sputtering power in A1 is 100-150W, and the sputtering time is 15-20 minutes, the sputtering power in A2 is 80-120W, and the sputtering time is 10-15 minutes.

4. The method of manufacturing a high voltage ceramic capacitor of claim 1, wherein The ball milling time of the ceramic medium layer in S1 is 12-16 hours, and the rotation speed of the ball mill is 300-500rpm.

5. The method of manufacturing a high voltage ceramic capacitor of claim 1, wherein, It also includes a post-processing step: put the capacitor with the electrode layer into an annealing furnace for annealing treatment at 550℃ for 1.5 hours, and the heating rate of the annealing treatment is 3℃ / min.

6. The method of manufacturing a high voltage ceramic capacitor of claim 1, wherein, The thickness of the silver and nickel layers sputtered in A1 and A2 is 1-2μm and 0.5-1μm respectively.

7. The method of manufacturing a high voltage ceramic capacitor of claim 1, wherein, In S1, the amount of deionized water added is 30%-40% of the total mass of the raw materials, and the ratio of material to ball during ball milling is 1:2-1:

3.

8. The method of manufacturing a high voltage ceramic capacitor of claim 1, wherein, In S3, the amount of binder added is 5%-8% of the mass of the pre-sintered material, and the particle size of the granulated particles is 100-200 mesh.

9. The method of manufacturing a high voltage ceramic capacitor of claim 1, wherein: In S1, the weight percentage of barium titanate (BaTiO3), barium zirconate (BaZrO3), yttrium trioxide (Y2O3) and niobium pentoxide (Nb2O5) is 85%, 10%, 3% and 2% respectively.

10. A high voltage ceramic capacitor prepared by the process of claims 1-9, wherein The high-voltage ceramic capacitor has a dielectric constant greater than 5000 at an operating voltage of 1000V, a dielectric constant change rate less than 5% at an ambient temperature of 25℃, a dielectric constant greater than 4000 at a frequency of 500Hz, and a dielectric constant change rate less than 8% after being placed in an environment of 85℃ and 85% relative humidity for 1000 hours.

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