Semiconductor laser array, optical communication transmitting module and communication equipment

Abstract

The invention discloses a semiconductor laser array, an optical communication transmitting module and communication equipment, and the semiconductor laser array is characterized in that the light-emitting surfaces of a plurality of VCSEL units sharing the same substrate are provided with semi-spherical surfaces, equivalently, the light-emitting surfaces are provided with off-axis lenses, and emergent light beams are deflected towards the central axis of a laser matrix; the effect that the light beams of the multiple VCSEL units are coupled into the same position is achieved. In the optical communication transmitting module, light beams of a plurality of VCSEL units can be coupled into the same transmission optical fiber. The efficiency of receiving optical signals or optical energy by the single optical fiber core is improved, the data transmission rate and quality are improved, and the requirements of high-speed optical communication and short-distance large-capacity data transmission are met.

Description

Technical Field

[0001] This application relates to the field of laser technology, and in particular to a semiconductor laser array, an optical communication transmitting module, and a communication device. Background Technology

[0002] Vertical cavity surface emitting lasers (VCSELs) are semiconductor laser arrays. Compared to infrared light-emitting diodes (IR LEDs) and edge-emitting lasers (EELs), VCSELs offer many significant advantages, such as narrower spectral density, lower power consumption, and less temperature drift. Due to their unique performance, VCSELs are widely used in various fields. In optical communication, they are key components for high-speed data transmission, providing a stable light source for high-speed optical communication and short-distance, high-capacity data transmission. In optical storage, they facilitate high-density data storage. They also play an indispensable role in laser printing, biomedicine, and optical sensing.

[0003] However, in applications such as high-speed optical communication, short-distance high-capacity data transmission, and visible light display technology, the beam emitted from the VCSEL needs to be coupled into an optical fiber to meet the requirements of low-loss optical transmission. Currently, however, the efficiency of beam coupling into the optical fiber still needs further improvement, and the optical signal and energy received by a single fiber core are relatively low. This not only limits the data transmission rate and quality but also hinders the further development of related technologies. Summary of the Invention

[0004] The purpose of this application is to provide a semiconductor laser array, an optical communication transmitting module, and a communication device that can improve the above-mentioned problems.

[0005] The embodiments of this application are implemented as follows: In a first aspect, this application provides a semiconductor laser array, comprising: At least two VCSEL cells sharing the same substrate, each VCSEL cell having a light-emitting surface comprising a hemisphere configured to deflect the emitted beam of the VCSEL cell toward the central axis of a laser matrix, the central axis being perpendicular to the substrate surface and passing through the geometric center of the substrate surface.

[0006] It is understood that this application, by setting hemispherical surfaces on the emitting surfaces of multiple VCSEL units sharing the same substrate, is equivalent to placing off-axis lenses on the emitting surfaces, deflecting the emitted beams towards the central axis of the laser matrix, thus achieving the effect of coupling the beams of multiple VCSEL units to the same position. This application improves the efficiency of receiving optical signals or optical energy in a single fiber core, which is beneficial to improving data transmission rate and quality, meeting the needs of high-speed optical communication and short-distance, high-capacity data transmission. At the same time, this application avoids the addition of unnecessary optical components, avoids additional losses and assembly errors, and reduces system complexity and cost.

[0007] In an optional embodiment of this application, a transparent insulating layer is further provided on the light-emitting surface. The refractive index of the transparent insulating layer is less than the refractive index of the semiconductor layer in which the hemisphere is located, and the refractive index of the transparent insulating layer is greater than the refractive index of air.

[0008] It is understandable that designing the light-emitting surface of the VCSEL unit as a hemisphere allows the emitted beam to be refracted on the hemisphere and deflected toward the central axis of the laser matrix. Adding a transparent insulating layer with a lower refractive index on the hemisphere allows for further adjustment of the emitted beam according to specific needs.

[0009] In an optional embodiment of this application, the light-emitting surface of the transparent insulating layer facing away from the hemisphere is perpendicular to the central axis.

[0010] It is understandable that the emitted beam of the VCSEL unit is refracted on the hemispherical surface, resulting in a first deflection towards the central axis of the laser matrix. The emitted beam will also undergo a second deflection towards the central axis of the laser matrix on the light-emitting surface of the transparent insulating layer, thereby increasing the deflection angle of the emitted beam of the VCSEL unit.

[0011] In an optional embodiment of this application, the light-emitting surface of the transparent insulating layer facing away from the hemisphere is perpendicular to the optical axis of the light beam after being deflected by the hemisphere; and a collimating lens is embedded in the light-emitting surface, the collimating lens being configured to collimate the light beam emitted from the light-emitting surface.

[0012] It is understandable that the emitted light beam is incident perpendicularly onto the light-emitting surface of the transparent insulating layer, which minimizes refraction and reflection deviations during light propagation. Furthermore, although the emitted beam of a VCSEL is an oscillating laser beam, it still possesses a certain divergence angle, which can affect fiber coupling efficiency. Therefore, this application embeds a collimating lens on the light-emitting surface to collimate the emitted beam of the VCSEL, preventing an excessively large beam spot when incident on the fiber and thus avoiding wasted coupling efficiency.

[0013] In an optional embodiment of this application, the VCSEL unit includes a bottom semiconductor reflective structure, an active layer, and a top semiconductor reflective structure stacked together. The surface of the top semiconductor reflective structure is the light-emitting surface. A current limiting ring is disposed near the active layer, and the area surrounded by the current limiting ring is the light-emitting area of ​​the VCSEL unit. The vertical projection point of the central axis on the active layer is the target point, and the vertical projection point of the vertex of the hemisphere on the active layer is the center point. The center point is located on the line connecting the center point of the light-emitting area and the target point.

[0014] In an optional embodiment of this application, the diameter of the light-emitting region is smaller than the radius of the vertical projection region of the hemisphere on the active layer.

[0015] In an optional embodiment of this application, the bottom semiconductor reflective structure and / or the top semiconductor reflective structure includes: a top semiconductor layer, a bottom semiconductor layer, and at least one intermediate semiconductor layer disposed between the top semiconductor layer and the bottom semiconductor layer; the refractive index of each semiconductor layer gradually decreases along the central axis and away from the substrate.

[0016] It is understandable that by setting the refractive index of a multilayer semiconductor reflective structure that gradually decreases along the central axis and away from the substrate, the laser cavity length is effectively extended. This suppresses the generation of higher-order mode beams, thereby effectively reducing the overall beam divergence angle of the VCSEL without increasing the physical size, and improving beam quality and the efficiency of coupling into the fiber.

[0017] In an optional embodiment of this application, at least one of the semiconductor layers has a wavy interface. It is understood that the wavy design increases the refraction angle of light at the semiconductor layer interface, lengthening the light propagation path within the cavity, which is equivalent to increasing the cavity length.

[0018] Secondly, this application also discloses an optical communication transmitting module, including a transmission optical fiber and a semiconductor laser array as described in any of the first aspects; the emitted beams of the at least two VCSEL units are deflected and coupled into the fiber core by their respective hemispherical deflectors.

[0019] It is understood that the optical communication transmitting module disclosed in this application achieves efficient coupling of beams emitted from multiple VCSEL units by integrating a semiconductor laser array with a hemispherical light-emitting design and a transmission optical fiber. The hemispherical structure automatically deflects the beam towards the central axis, significantly improving the fiber receiving efficiency and solving the problems of high optical signal loss and low energy in traditional solutions. This design can reduce system complexity in high-speed optical communication and short-distance, high-capacity transmission scenarios while ensuring data transmission rate and quality.

[0020] In an optional embodiment of this application, the optical axis of the beam emitted by the VCSEL unit is deflected by the hemisphere and forms a preset deflection angle with the central axis. The preset deflection angle is smaller than the maximum incident angle that the transmission optical fiber can receive.

[0021] In an optional embodiment of this application, the first spacing between the emission optical axes of two adjacent VCSEL units The second spacing between the tail end of the transmission fiber and the semiconductor laser array The following relationship exists between them: ; in, This represents the maximum incident angle that the transmission optical fiber can receive, satisfying... ,in The numerical aperture represents the optical fiber used for transmission.

[0022] In an optional embodiment of this application, the optical communication transmitting module is further provided with a reflective surface, which is configured to reflect the emitted light beams of the at least two VCSEL units into the transmission optical fiber; the tail portion of the transmission optical fiber is arranged parallel to the substrate.

[0023] It is understandable that the reflective surface allows the emitted beams from multiple VCSEL units to be efficiently coupled into the transmission fiber parallel to the substrate after reflection, improving space utilization. This design simplifies the optical path layout, reduces assembly difficulty, and ensures beam transmission quality, making it suitable for compact optical communication equipment.

[0024] In an optional embodiment of this application, the incident angle of the VCSEL element onto the reflecting surface is... When the angle is less than 45°, the angle between the reflective surface and the substrate The following conditions must be met: ; The angle of incidence of the VCSEL element onto the reflecting surface When the angle is greater than 45°, the angle between the reflective surface and the substrate The following conditions must be met: ; in, Represents the preset deflection angle, This represents the maximum incident angle that the transmission optical fiber can receive, satisfying... ,in The numerical aperture represents the optical fiber used for transmission.

[0025] Thirdly, this application also discloses a communication device, including an optical communication transmitting module and an optical communication receiving module as described in any of the second aspects, wherein the optical signal generated by the optical communication transmitting module is transmitted to the optical communication receiving module through the optical fiber.

[0026] It is understood that the communication device disclosed in this application achieves efficient optical signal transmission by integrating an optical communication transmitting module and a receiving module with a hemispherical deflection design. The transmitting module uses a hemispherical structure to precisely couple multiple VCSEL beams into the optical fiber, while the receiving module completes the optical signal reconstruction, significantly improving data transmission rate and quality. This solution solves the problems of high optical loss and low integration in traditional equipment, and is suitable for scenarios such as high-speed optical communication and short-distance high-capacity transmission, providing a more stable and compact light source solution for 5G and future communication technologies.

[0027] To make the above-mentioned objectives, features and advantages of this application more apparent and understandable, optional embodiments are described below in detail with reference to the accompanying drawings. Attached Figure Description

[0028] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0029] Figure 1 This is a schematic diagram of the optical axis of the emitted beam of a semiconductor laser array provided in this application; Figure 2 This is a schematic diagram of the optical axis of the emitted beam of another semiconductor laser array provided in this application; Figure 3 This is a schematic diagram of the optical axis of the emitted beam of another semiconductor laser array provided in this application; Figure 4 yes Figure 1 A top view of the semiconductor laser array shown; Figure 5 This is a top view of another semiconductor laser array provided in this application; Figure 6 This is a cross-sectional schematic diagram of the bottom semiconductor reflective structure of the VCSEL cell provided in this application; Figure 7 This is another cross-sectional schematic diagram of the bottom semiconductor reflective structure of the VCSEL cell provided in this application; Figure 8 This is a schematic diagram of an optical communication transmitting module provided in this application; Figure 9 This is a schematic diagram of the optical path of another optical communication transmitting module and one of its VCSEL units provided in this application; Figure 10 yes Figure 9 The diagram shows the optical path of another VCSEL unit in the optical communication transmitting module. Detailed Implementation

[0030] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.

[0031] In a first aspect, this application provides a semiconductor laser array, comprising: at least two VCSEL units sharing the same substrate, each VCSEL unit having a light-emitting surface including a hemisphere, the hemisphere being configured to deflect the emitted beam of the VCSEL unit toward the central axis of the laser matrix, the central axis being perpendicular to the substrate surface and passing through the geometric center of the substrate surface.

[0032] like Figure 1 The first semiconductor laser array 10 shown includes a substrate 11 and a first VCSEL unit 12 and a second VCSEL unit 13 disposed on the substrate 11. The first VCSEL unit 12 has a first hemisphere 120 on its light-emitting surface. The refractive index of the semiconductor layer containing the first hemisphere 120 is higher than that of air. Therefore, the first hemisphere 120 can deflect the emitted beam from the first VCSEL unit 12 towards the central axis 101 of the first semiconductor laser array 10. The black dashed line in the figure represents the optical axis path. The second VCSEL unit 13 has a second hemisphere 130 on its light-emitting surface. The refractive index of the semiconductor layer containing the second hemisphere 130 is higher than that of air. Therefore, the second hemisphere 130 can deflect the emitted beam from the second VCSEL unit 13 towards the central axis 101 of the first semiconductor laser array 10. The black dashed line in the figure represents the optical axis path. The central axis 101 is perpendicular to the surface of the substrate 11 and passes through the geometric center of the surface of the substrate 11.

[0033] In an optional embodiment of this application, the VCSEL cell includes a bottom semiconductor reflective structure, an active layer, and a top semiconductor reflective structure stacked together. The surface of the top semiconductor reflective structure is the light-emitting surface. A current limiting ring is disposed near the active layer, and the area surrounded by the current limiting ring is the light-emitting area of ​​the VCSEL cell. The vertical projection point of the central axis on the active layer is the target point, and the vertical projection point of the vertex of the hemisphere on the active layer is the center point. The center point is located on the line connecting the center point of the light-emitting area and the target point.

[0034] like Figure 1 As shown, the first VCSEL unit 12 includes a bottom semiconductor reflective structure 14, an active layer 121, and a first top semiconductor reflective structure 122 stacked together, and the second VCSEL unit 13 includes a bottom semiconductor reflective structure 14, an active layer 131, and a second top semiconductor reflective structure 132 stacked together. Although Figure 1 The first VCSEL unit 12 and the second VCSEL unit 13 shown share the same bottom semiconductor reflective structure 14, but this application also includes cases where different VCSEL units have different bottom semiconductor reflective structures, which will not be described here.

[0035] Continue to refer to Figure 1 A first current limiting ring 124 surrounding a first light-emitting region 123 is disposed near the active layer 121 of the first VCSEL unit 12, and a second current limiting ring 134 surrounding a second light-emitting region 133 is disposed near the active layer 131 of the second VCSEL unit 13. Figure 4 As shown, the light beam from the first light-emitting region 123 in the first VCSEL unit 12 is deflected to the first beam-combining region 15 by the first hemisphere 120, and the light beam from the second light-emitting region 133 in the second VCSEL unit 13 is deflected to the first beam-combining region 15 by the second hemisphere 130. The central axis 101 passes through the center of the first beam-combining region 15, and its vertical projection point on the active layer 121 is the target point O. The vertical projection point of the first hemisphere 120 on the active layer 121 is the first center point O1; the first center point O1 is located on the line connecting the center point Q1 of the first light-emitting region 123 and the target point O. The vertical projection point of the second hemisphere 130 on the active layer 121 is the second center point O2; the second center point O2 is located on the line connecting the center point Q2 of the second light-emitting region 133 and the target point O.

[0036] also, Figure 1 A first top electrode 125 is provided at the surface edge of the first top semiconductor reflective structure 122, a second top electrode 135 is provided at the surface edge of the second top semiconductor reflective structure 132, and a bottom electrode 140 is provided on the surface of the substrate 11 opposite to the bottom semiconductor reflective structure 14.

[0037] In an optional embodiment of this application, the diameter of the light-emitting region is smaller than the radius of the vertical projection region of the hemisphere on the active layer.

[0038] Continue to refer to Figure 4 The diameter of the first light-emitting region 123 is smaller than the radius of the vertical projection region of the first hemisphere 120 in the active layer 121; the diameter of the second light-emitting region 133 is smaller than the radius of the vertical projection region of the second hemisphere 130 in the active layer 131.

[0039] It is understood that this application, by setting hemispherical surfaces on the emitting surfaces of multiple VCSEL units sharing the same substrate, is equivalent to placing off-axis lenses on the emitting surfaces, deflecting the emitted beams towards the central axis of the laser matrix, thus achieving the effect of coupling the beams of multiple VCSEL units to the same position. This application improves the efficiency of receiving optical signals or optical energy in a single fiber core, which is beneficial to improving data transmission rate and quality, meeting the needs of high-speed optical communication and short-distance, high-capacity data transmission. At the same time, this application avoids the addition of unnecessary optical components, avoids additional losses and assembly errors, and reduces system complexity and cost.

[0040] Apart from Figure 1 and Figure 4 The illustration shows a first semiconductor laser array 10 with two VCSEL units. This application also includes other semiconductor laser arrays with more than two VCSEL units, as shown here. Figure 5 For example. Figure 5 The fourth semiconductor laser array 40 shown includes a substrate 41 and a third VCSEL unit 42, a fourth VCSEL unit 43, a fifth VCSEL unit 44, and a sixth VCSEL unit 45 disposed on the substrate 41. The light beam from the third emitting region 423 of the third VCSEL unit 42 is deflected to the second beam combining region 46 by the third hemisphere 420; the light beam from the fourth emitting region 433 of the fourth VCSEL unit 43 is deflected to the second beam combining region 46 by the fourth hemisphere 430; the light beam from the fifth emitting region 443 of the fifth VCSEL unit 44 is deflected to the second beam combining region 46 by the fifth hemisphere 440; and the light beam from the sixth emitting region 453 of the sixth VCSEL unit 45 is deflected to the second beam combining region 46 by the sixth hemisphere 450.

[0041] In an optional embodiment of this application, a transparent insulating layer is further provided on the light-emitting surface. The refractive index of the transparent insulating layer is less than the refractive index of the semiconductor layer in which the hemisphere is located, and the refractive index of the transparent insulating layer is greater than the refractive index of air.

[0042] It's understandable that designing the emitting surface of the VCSEL unit as a hemispherical surface allows the emitted beam to be refracted and deflected towards the central axis of the laser matrix. Adding a transparent insulating layer with a lower refractive index to the hemispherical surface further facilitates adjustments to the emitted beam according to specific requirements. This transparent insulating layer can be made of silicon dioxide (SiO2) or silicon nitride (SiN). x At least one of the following: magnesium fluoride (MgF2), etc., the refractive index of which is between the refractive index of air (about 1.0) and the refractive index of the semiconductor layer (usually GaAs) on which the hemisphere is located (about 3.5).

[0043] In addition, the transparent insulating layer not only deflects light but also provides insulation and protection. Although the transparent insulating layer covers the light-emitting surface, it also has corresponding edge grooves to expose the top electrode.

[0044] In an optional embodiment of this application, the light-emitting surface of the transparent insulating layer facing away from the hemisphere is perpendicular to the central axis.

[0045] like Figure 2 The second semiconductor laser array 20 shown is in Figure 1 Based on the first semiconductor laser array 10 shown, the second semiconductor laser array 20 further includes a first transparent insulating layer 21 on the first hemisphere 120, with the first light-emitting surface 211 of the first transparent insulating layer 21 facing away from the hemisphere and perpendicular to the central axis 101; a second transparent insulating layer 22 is further included on the second hemisphere 130, with the second light-emitting surface 221 of the second transparent insulating layer 22 facing away from the hemisphere and perpendicular to the central axis 101. The emitted beam of the VCSEL undergoes a first deflection toward the central axis upon entering the first and second transparent insulating layers 21 and 22, and a second deflection toward the central axis upon exiting the first and second transparent insulating layers 21 and 22.

[0046] It is understandable that the emitted beam of the VCSEL unit is refracted on the hemispherical surface, resulting in a first deflection towards the central axis of the laser matrix. The emitted beam will also undergo a second deflection towards the central axis of the laser matrix on the light-emitting surface of the transparent insulating layer, thereby increasing the deflection angle of the emitted beam of the VCSEL unit.

[0047] In an optional embodiment of this application, the light-emitting surface of the transparent insulating layer facing away from the hemisphere is perpendicular to the optical axis of the light beam after being deflected by the hemisphere; and a collimating lens is embedded in the light-emitting surface, which is configured to collimate the light beam emitted from the light-emitting surface.

[0048] like Figure 3 The third semiconductor laser array 30 shown is in Figure 1Based on the first semiconductor laser array 10 shown, a third transparent insulating layer 31 is further disposed on the first hemispherical surface 120 of the third semiconductor laser array 30. The third light-emitting surface 311 of the third transparent insulating layer 31, facing away from the hemispherical surface, is perpendicular to the optical axis of the beam after deflection by the hemispherical surface. A first collimating lens 33 is also disposed on the third light-emitting surface 311, so that the beam emitted from the third light-emitting surface 311 is a collimated beam. Figure 1 Based on the first semiconductor laser array 10 shown, a fourth transparent insulating layer 32 is further disposed on the second hemispherical surface 130 of the third semiconductor laser array 30. The fourth light-emitting surface 321 of the fourth transparent insulating layer 32, which faces away from the hemispherical surface, is perpendicular to the optical axis of the beam after deflection by the hemispherical surface. A second collimating lens 34 is also disposed on the fourth light-emitting surface 321, so that the beam emitted from the fourth light-emitting surface 321 is a collimated beam.

[0049] It is understandable that the emitted light beam is incident perpendicularly onto the light-emitting surface of the transparent insulating layer, which minimizes refraction and reflection deviations during light propagation. Furthermore, although the emitted beam of a VCSEL is an oscillating laser beam, it still possesses a certain divergence angle, which can affect fiber coupling efficiency. Therefore, this application embeds a collimating lens on the light-emitting surface to collimate the emitted beam of the VCSEL, preventing an excessively large beam spot when incident on the fiber and thus avoiding wasted coupling efficiency.

[0050] In optional embodiments of this application, the bottom semiconductor reflective structure and / or the top semiconductor reflective structure include: a top semiconductor layer, a bottom semiconductor layer, and at least one intermediate semiconductor layer disposed between the top semiconductor layer and the bottom semiconductor layer; the refractive index of each semiconductor layer gradually decreases along the central axis and away from the substrate.

[0051] Taking the bottom semiconductor layer as an example, such as Figure 6 As shown Figure 1 The diagram shows a magnified view of the bottom semiconductor reflective structure 14 in the first semiconductor laser array 10. The bottom semiconductor reflective structure 14 includes a bottom semiconductor layer 141, a first intermediate semiconductor layer 142, a second intermediate semiconductor layer 143, and a top semiconductor layer 144, stacked sequentially. The refractive index of the bottom semiconductor layer 141 is greater than that of the first intermediate semiconductor layer 142, the refractive index of the first intermediate semiconductor layer 142 is greater than that of the second intermediate semiconductor layer 143, and the refractive index of the second intermediate semiconductor layer 143 is greater than that of the top semiconductor layer 144. Specifically, the bottom semiconductor layer 141 can be made of Al. 0.12 Ga 0.88 As material, the first intermediate semiconductor layer 142 can be made of Al. 0.35 Ga 0.88 As material, the second intermediate semiconductor layer 143 can be made of Al.0.7 Ga 0.88 As material, the top semiconductor layer 144 can be made of Al. 0.9 Ga 0.88 As material.

[0052] Along the central axis and away from the substrate, the increased proportion of Al in each semiconductor layer may lead to increased resistance. Therefore, Si or Be elements are doped into each semiconductor layer to adjust conductivity. The doping concentration can gradually increase along the central axis and away from the substrate; for example, the doping concentration of the bottom semiconductor layer 141 is less than that of the first intermediate semiconductor layer 142, the doping concentration of the first intermediate semiconductor layer 142 is less than that of the second intermediate semiconductor layer 143, and the doping concentration of the second intermediate semiconductor layer 143 is less than that of the top semiconductor layer 144.

[0053] It is understandable that by setting the refractive index of a multilayer semiconductor reflective structure that gradually decreases along the central axis and away from the substrate, the laser cavity length is effectively extended. This suppresses the generation of higher-order mode beams, thereby effectively reducing the overall beam divergence angle of the VCSEL without increasing the physical size, and improving beam quality and the efficiency of coupling into the fiber.

[0054] In an optional embodiment of this application, the interface of at least one semiconductor layer has a wavy surface. For example... Figure 7 As shown, the interface between the bottom semiconductor layer 141 and the first intermediate semiconductor layer 142 is wavy. It can be understood that the wavy surface design makes the refraction angle of light at the semiconductor layer interface larger, which lengthens the propagation path of light in the cavity and is equivalent to increasing the cavity length.

[0055] Secondly, this application also discloses an optical communication transmitting module, including a transmission optical fiber and a semiconductor laser array as described in any of the first aspects; the emitted beams of at least two VCSEL units are deflected and coupled into the fiber core by their respective hemispherical deflection surfaces.

[0056] like Figure 8 The optical communication transmitting module shown includes a transmission optical fiber 81 and a semiconductor laser array 82, although Figure 8 The semiconductor laser array 82 in the middle adopts Figure 1 The first semiconductor laser array 10 is shown, but in reality, the semiconductor laser array 82 can be as follows: Figures 1 to 3 Any semiconductor laser array in the array.

[0057] It is understood that the optical communication transmitting module disclosed in this application achieves efficient coupling of beams emitted from multiple VCSEL units by integrating a semiconductor laser array with a hemispherical light-emitting design and a transmission optical fiber. The hemispherical structure automatically deflects the beam towards the central axis, significantly improving the fiber receiving efficiency and solving the problems of high optical signal loss and low energy in traditional solutions. This design can reduce system complexity in high-speed optical communication and short-distance, high-capacity transmission scenarios while ensuring data transmission rate and quality.

[0058] In an optional embodiment of this application, the optical axis of the beam emitted by the VCSEL unit is deflected by the hemispherical surface and forms a preset deflection angle with the central axis. The preset deflection angle is smaller than the maximum incident angle that the transmission optical fiber can receive.

[0059] like Figure 8 As shown, the first spacing between the output optical axes of two adjacent VCSEL units The second spacing between the transmission fiber tail and the semiconductor laser array The following relationship exists between them: ; in, This represents the maximum angle of incidence that the transmission fiber can receive, satisfying... ,in Numerical aperture representing the optical fiber used for transmission.

[0060] In optional embodiments of this application, such as Figure 9 As shown, the optical communication transmitting module is also provided with a reflective surface 90, which is configured to reflect the emitted beams of at least two VCSEL units into the transmission optical fiber; the tail end of the transmission optical fiber is arranged parallel to the substrate.

[0061] It is understandable that the reflective surface allows the emitted beams from multiple VCSEL units to be efficiently coupled into the transmission fiber parallel to the substrate after reflection, improving space utilization. This design simplifies the optical path layout, reduces assembly difficulty, and ensures beam transmission quality, making it suitable for compact optical communication equipment.

[0062] In an optional embodiment of this application, the incident angle at the incident reflecting surface of the VCSEL unit When less than 45°, such as Figure 9 The incident angle of the first VCSEL unit 12 at the incident reflection surface of the emitted optical axis is 90°. The angle between the reflective surface 90 and the substrate 11 is less than 45°. The following conditions must be met: ; The angle of incidence at the incident reflection surface of the VCSEL unit. When the angle is greater than 45°, such as Figure 10The incident angle of the second VCSEL unit 13 at the incident reflection surface 90° of the output optical axis The angle between the reflective surface 90 and the substrate 11 is greater than 45°. The following conditions must be met: ; in, Represents the preset deflection angle. This represents the maximum angle of incidence that the transmission fiber can receive, satisfying... ,in Numerical aperture representing the optical fiber used for transmission.

[0063] Thirdly, this application also discloses a communication device, including an optical communication transmitting module and an optical communication receiving module as described in any of the second aspects, wherein the optical signal generated by the optical communication transmitting module is transmitted to the optical communication receiving module through an optical fiber.

[0064] It is understood that the communication device disclosed in this application achieves efficient optical signal transmission by integrating an optical communication transmitting module and a receiving module with a hemispherical deflection design. The transmitting module uses a hemispherical structure to precisely couple multiple VCSEL beams into the optical fiber, while the receiving module completes the optical signal reconstruction, significantly improving data transmission rate and quality. This solution solves the problems of high optical loss and low integration in traditional equipment, and is suitable for scenarios such as high-speed optical communication and short-distance high-capacity transmission, providing a more stable and compact light source solution for 5G and future communication technologies.

[0065] The terms "first," "second," "first," or "second" as used in the various embodiments of this disclosure may modify various components regardless of their order and / or importance, but these terms do not limit the corresponding components. The above terms are configured only for the purpose of distinguishing an element from other elements. For example, "first user equipment" and "second user equipment" refer to different user equipments, although both are user equipment. For example, without departing from the scope of this disclosure, a first element may be referred to as a second element, and similarly, a second element may be referred to as a first element.

[0066] When a component (e.g., a first component) is referred to as being "(operably or communicatively) coupled" or "(operably or communicatively) coupled to" or "connected to" another component (e.g., a second component), it should be understood that the first component is directly connected to the second component or that the first component is indirectly connected to the second component via yet another component (e.g., a third component). Conversely, it can be understood that when a component (e.g., a first component) is referred to as being "directly connected" or "directly coupled" to another component (the second component), no component (e.g., a third component) is inserted between the two.

[0067] It should be noted that, in this document, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes that element. Furthermore, components, features, and elements with the same names in different embodiments of this application may have the same meaning or different meanings, the specific meaning of which must be determined by its interpretation in that specific embodiment or further in conjunction with the context of that specific embodiment.

[0068] The above description is merely an optional embodiment of this application and an explanation of the technical principles employed. Those skilled in the art should understand that the scope of the invention involved in this application is not limited to technical solutions formed by specific combinations of the above-described technical features, but should also cover other technical solutions formed by arbitrary combinations of the above-described technical features or their equivalents without departing from the above-described inventive concept. For example, technical solutions formed by substituting the above-described features with (but not limited to) technical features with similar functions disclosed in this application.

[0069] Depending on the context, the words “if” or “suppose” as used here can be interpreted as “when” or “in response to determination” or “in response to detection.” Similarly, depending on the context, the phrases “if determination” or “if detection (of the stated condition or event)” can be interpreted as “when determination” or “in response to determination” or “when detection (of the stated condition or event)” or “in response to detection (of the stated condition or event).”

[0070] The above description is merely an optional embodiment of this application and an explanation of the technical principles employed. Those skilled in the art should understand that the scope of the invention involved in this application is not limited to technical solutions formed by specific combinations of the above-described technical features, but should also cover other technical solutions formed by arbitrary combinations of the above-described technical features or their equivalents without departing from the above-described inventive concept. For example, technical solutions formed by substituting the above-described features with (but not limited to) technical features with similar functions disclosed in this application.

[0071] The above description is merely an optional embodiment of this application and is not intended to limit this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A semiconductor laser array, characterized in that, include: At least two VCSEL cells sharing the same substrate, each VCSEL cell having a light-emitting surface comprising a hemisphere configured to deflect the emitted beam of the VCSEL cell toward the central axis of a laser matrix, the central axis being perpendicular to the substrate surface and passing through the geometric center of the substrate surface.

2. The semiconductor laser array according to claim 1, characterized in that, A transparent insulating layer is also provided on the light-emitting surface. The refractive index of the transparent insulating layer is less than the refractive index of the semiconductor layer in which the hemisphere is located, and the refractive index of the transparent insulating layer is greater than the refractive index of air.

3. The semiconductor laser array according to claim 2, characterized in that, The light-emitting surface of the transparent insulating layer, which is opposite to the hemisphere, is perpendicular to the central axis.

4. The semiconductor laser array according to claim 2, characterized in that, The light-emitting surface of the transparent insulating layer facing away from the hemisphere is perpendicular to the optical axis of the light beam after being deflected by the hemisphere; and a collimating lens is embedded in the light-emitting surface, which is configured to collimate the light beam emitted from the light-emitting surface.

5. The semiconductor laser array according to any one of claims 1 to 4, characterized in that, The VCSEL unit includes a bottom semiconductor reflective structure, an active layer, and a top semiconductor reflective structure stacked together. The surface of the top semiconductor reflective structure is the light-emitting surface. A current limiting ring is disposed near the active layer, and the area surrounded by the current limiting ring is the light-emitting area of ​​the VCSEL unit. The vertical projection point of the central axis on the active layer is the target point, and the vertical projection point of the vertex of the hemisphere on the active layer is the center point. The center point is located on the line connecting the center point of the light-emitting area and the target point.

6. The semiconductor laser array according to claim 5, characterized in that, The diameter of the light-emitting region is smaller than the radius of the vertical projection region of the hemisphere on the active layer.

7. The semiconductor laser array according to claim 5, characterized in that, The bottom semiconductor reflective structure and / or the top semiconductor reflective structure include: a top semiconductor layer, a bottom semiconductor layer, and at least one intermediate semiconductor layer disposed between the top semiconductor layer and the bottom semiconductor layer; the refractive index of each semiconductor layer gradually decreases along the central axis and away from the substrate.

8. The semiconductor laser array according to claim 7, characterized in that, At least one of the semiconductor layers has a wavy interface.

9. An optical communication transmitting module, characterized in that, include: The transmission optical fiber and the semiconductor laser array as described in any one of claims 1 to 8; The emitted beams from the at least two VCSEL units are deflected and coupled into the fiber core by their respective hemispherical surfaces.

10. The optical communication transmitting module according to claim 9, characterized in that, The optical axis of the beam emitted by the VCSEL unit is deflected by the hemisphere and forms a preset deflection angle with the central axis. The preset deflection angle is smaller than the maximum incident angle that the transmission optical fiber can receive.

11. The optical communication transmitting module according to claim 10, characterized in that, The first spacing between the output optical axes of two adjacent VCSEL units The second spacing between the tail end of the transmission fiber and the semiconductor laser array The following relationship exists between them: ； in, This represents the maximum incident angle that the transmission optical fiber can receive, satisfying... ,in The numerical aperture represents the optical fiber used for transmission.

12. The optical communication transmitting module according to claim 9, characterized in that, The optical communication transmitting module is further provided with a reflective surface, which is configured to reflect the emitted light beams of the at least two VCSEL units into the transmission optical fiber; the tail end of the transmission optical fiber is arranged parallel to the substrate.

13. The optical communication transmitting module according to claim 11, characterized in that, The angle of incidence of the VCSEL element onto the reflecting surface When the angle is less than 45°, the angle between the reflective surface and the substrate The following conditions must be met: ； The angle of incidence of the VCSEL element onto the reflecting surface When the angle is greater than 45°, the angle between the reflective surface and the substrate The following conditions must be met: ； in, Represents the preset deflection angle, This represents the maximum incident angle that the transmission optical fiber can receive, satisfying... ,in The numerical aperture represents the optical fiber used for transmission.

14. A communication device, characterized in that, Includes an optical communication transmitting module and an optical communication receiving module as described in any one of claims 9 to 13, wherein the optical signal generated by the optical communication transmitting module is transmitted to the optical communication receiving module through the optical fiber.

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