Display device, electronic device, and method for manufacturing display device

By employing a multi-layer thin-film encapsulation structure in the display device, and utilizing an oxygen-doped silicon nitride layer to absorb exhaust gas and ammonia, the reliability problem of the display device is solved, the manufacturing process and reliability are improved, and the discoloration of the polarization film is prevented.

CN121285183APending Publication Date: 2026-01-06SAMSUNG DISPLAY CO LTD
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Patent Information

Application Number
CN202510921248.X
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Priority Date
2024-07-05
Filing Date
2025-07-04
Publication Date
2026-01-06

AI Technical Summary

Technical Problem

Existing display devices have reliability issues during manufacturing processes or reliability assessments, particularly due to the reaction of exhaust gases and ammonia generated by organic materials in the thin-film encapsulation layer with iodine ions in the polarization film, causing discoloration of the polarization film.

Method used

A multilayer thin-film encapsulation structure is adopted, wherein the first and third layers are oxygen-doped silicon nitride with porosity and low film density, and the second layer is an inorganic material with high film density, which is used to absorb the generated exhaust gas and ammonia gas, prevent the polarization film from discoloring, and these layers are continuously formed in the same chamber.

Benefits of technology

It improves the manufacturing process and reliability of display devices, prevents discoloration of polarizing films, enhances the protective effect of thin-film encapsulation layers, and improves the overall reliability of display devices.

✦ Generated by Eureka AI based on patent content.

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Abstract

The invention relates to a display device, an electronic device, and a method for manufacturing the display device. The display device includes: a substrate including an emission area and a non-emission area; a display element layer including an emission layer disposed in the emission area of the substrate; the thin film encapsulation layer is arranged on the display element layer, and the thin film encapsulation layer comprises a first encapsulation layer, a second encapsulation layer and a third encapsulation layer; and a polarizing film disposed on the thin film encapsulation layer. The third encapsulation layer includes: a first layer having a hole; a second layer disposed on the first layer and having a film density higher than that of the first layer; and a third layer disposed on the second layer and having a hole.
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Description

[0001] Cross-reference to related applications

[0002] This application claims priority to Korean Patent Application No. 10-2024-0088912, filed on July 5, 2024, and all benefits derived therefrom, the contents of which are incorporated herein by reference in their entirety. Technical Field

[0003] Embodiments of this disclosure relate to display devices, electronic devices, and methods of manufacturing display devices. Background Technology

[0004] With the development of the information society, the demand for display devices is constantly increasing. For example, various electronic devices (such as smartphones, digital cameras, laptops, navigation devices, and smart TVs) are adopting display devices.

[0005] Recently, touch components capable of detecting touch input have been adopted in display devices used in smartphones and tablet computers. These touch components can be directly formed on the display panel, simplifying the manufacturing process and reducing the thickness of the display device.

[0006] Such display devices typically include a display panel for generating and displaying images, as well as various input devices. Recently, touch panels that recognize touch input have been widely used in the display devices of smartphones or tablet computers. The touch panel determines whether touch input has been received, and if so, locates the coordinates of the touch input's position. Summary of the Invention

[0007] Embodiments of this disclosure provide a method for solving reliability problems of display devices.

[0008] These and other embodiments of the present disclosure will become apparent to those skilled in the art after reading the following detailed description and claims.

[0009] One or more embodiments of the invention described herein are set forth in the accompanying drawings and described below.

[0010] In embodiments of this disclosure, a display device includes a display panel, which includes: a substrate including an emitting region and a non-emitting region; a display element layer including an emitting layer disposed in the emitting region of the substrate; a thin-film encapsulation layer disposed on the display element layer, wherein the thin-film encapsulation layer includes a first encapsulation layer, a second encapsulation layer and a third encapsulation layer; and a polarizing film disposed on the thin-film encapsulation layer, wherein the third encapsulation layer includes: a first layer having a hole; a second layer disposed on the first layer and having a film density higher than that of the first layer; and a third layer disposed on the second layer and having a hole.

[0011] In an implementation, each of the first, second, and third layers may comprise oxygen-doped silicon nitride.

[0012] In an implementation, the third layer may have a lower film density than the second layer.

[0013] In this embodiment, the film density of each of the first and third layers may be equal to or less than about 1.9 grams per cubic centimeter (g / cm³). 3 Furthermore, the density of the second layer can be equal to or greater than approximately 1.9 g / cm³. 3 And equal to or less than approximately 2.2 g / cm³ 3 .

[0014] In an implementation, each of the first and third layers may have a compressive stress of about -200 MPa or less, and the second layer has a compressive stress in the range of about -250 MPa to about -150 MPa.

[0015] In one implementation, the second layer may have a lower porosity than the first layer and the third layer.

[0016] In an implementation, the oxygen content of the second layer may be in the range of about 10% to about 20%, and the oxygen content of each of the first and third layers may be equal to or less than about 10%.

[0017] In an implementation, the thickness of the first layer and the thickness of the third layer may be less than the thickness of the second layer.

[0018] In an implementation, the thickness of the first layer and the thickness of the third layer may be in the range of about 10% to about 15% of the total thickness of the thin film encapsulation layer.

[0019] In one implementation, the holes in the first layer may be non-uniform, and the holes in the third layer may also be non-uniform.

[0020] In one embodiment, the second encapsulation layer may include an organic material, and the polarizing film may include iodine ions.

[0021] In one embodiment, the first layer may contact the second encapsulation layer, and the third layer may contact the polarizing film.

[0022] In an embodiment, the display device may further include a touch sensor layer disposed between the thin film encapsulation layer and the polarizing film. The touch sensor layer may include a first touch layer and a second touch layer disposed on the first touch layer. The second touch layer may have a hole and contact the polarizing film, and the film density of the second touch layer may be less than the film density of the first touch layer.

[0023] In this embodiment, the film density of the first touch layer may be equal to or greater than approximately 1.9 g / cm³. 3 And equal to or less than approximately 2.2 g / cm³ 3 Furthermore, the film density of the second touch layer can be equal to or less than approximately 1.9 g / cm³. 3 .

[0024] In embodiments of this disclosure, the electronic device includes a display device.

[0025] In embodiments of this disclosure, a method for manufacturing a display device includes: forming a first encapsulation layer comprising an inorganic material on a substrate, forming a second encapsulation layer comprising an organic material on the first encapsulation layer, and then forming a third encapsulation layer comprising a plurality of different layers on the second encapsulation layer; and forming a polarizing film on the third encapsulation layer, wherein the third encapsulation layer comprises: a first layer contacting the second encapsulation layer and having a hole; a second layer disposed on the first layer and having a film density higher than that of the first layer; and a third layer disposed on the second layer and contacting the polarizing film, and having a hole.

[0026] In one implementation, the first layer can absorb the exhaust gas generated in the second encapsulation layer through the holes in the first layer.

[0027] In an implementation, the film density of the third layer may be less than that of the second layer.

[0028] In this embodiment, the third layer can absorb ammonia (NH3) in the pores of the third layer.

[0029] In an implementation, the formation of the third encapsulation layer may include forming a first layer, a second layer, and a third layer in the same chamber.

[0030] According to embodiments of this disclosure, the thin-film encapsulation layer in contact with the organic layer includes an inorganic film with porosity, which can improve the reliability of the display device during the manufacturing process or reliability assessment of the display device.

[0031] It should be noted that the effects of the embodiments of this disclosure are not limited to those described above, and other effects of the embodiments of this disclosure will be apparent to those skilled in the art from the following description. Attached Figure Description

[0032] The above and other features of the embodiments of this disclosure will become more apparent from the detailed description of the embodiments with reference to the accompanying drawings, wherein:

[0033] Figure 1 A perspective view showing a display device according to an embodiment of the present disclosure;

[0034] Figure 2 for Figure 1A cross-sectional view of the display device;

[0035] Figure 3 To show the location Figure 2 A plan view of the arrangement of the emission area in the display area of ​​the display device;

[0036] Figure 4 For along Figure 3 A cross-sectional view taken by line X1-X1';

[0037] Figure 5 for Figure 4 A magnified view of region A in the image;

[0038] Figure 6 for Figure 5 Enlarged cross-sectional view of region C;

[0039] Figure 7 for Figure 5 Enlarged cross-sectional view of region E;

[0040] Figure 8 To show Figure 1 A cross-sectional view of a display device according to another embodiment;

[0041] Figure 9 for Figure 8 A cross-sectional view of the display area in a display device;

[0042] Figure 10 for Figure 9 An enlarged cross-sectional view of region P;

[0043] Figure 11 and Figure 12 A cross-sectional view illustrating an embodiment of the process for manufacturing the thin-film encapsulation layer;

[0044] Figure 13 for Figure 12 Enlarged cross-sectional view of region S;

[0045] Figure 14 and Figure 15 To demonstrate manufacturing Figure 4 A cross-sectional view of an implementation method for the thin-film encapsulation layer and polarizing film process;

[0046] Figure 16 for Figure 15 Enlarged cross-sectional view of region T;

[0047] Figure 17 This is a block diagram of an electronic device according to one embodiment of the present disclosure; and

[0048] Figure 18 This is a schematic diagram of an electronic device according to various embodiments of the present disclosure. Detailed Implementation

[0049] The invention will now be described more fully below with reference to the accompanying drawings, in which various embodiments are illustrated. However, the invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. The same reference numerals denote the same elements throughout.

[0050] It will be understood that when an element is referred to as "on" another element, it can be directly on the other element or an intermediary element can exist between them. In contrast, when an element is referred to as "directly on" another element, no intermediary element exists.

[0051] It will be understood that although the terms “first,” “second,” “third,” etc., may be used herein to describe various elements, components, areas, layers, and / or parts, these elements, components, areas, layers, and / or parts should not be limited by these terms. These terms are used only to distinguish one element, component, area, layer, or part from another. Therefore, without departing from the teachings of this document, “first element,” “first component,” “first area,” “first layer,” or “first part” discussed below may be referred to as a second element, second component, second area, second layer, or second part.

[0052] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting. As used herein, the singular forms “a,” “an,” and “the” are intended to include the plural forms, including “at least one,” unless the context clearly indicates otherwise. Thus, reference to “a” element followed by “the” element in the claims includes one element and multiple elements. For example, unless the context clearly indicates otherwise, “element” has the same meaning as “at least one element.” “At least one” is not construed as limited to “a” or “an.” “Or” means “and / or.” As used herein, the term “and / or” includes any and all combinations of one or more of the associated enumerated items. It will be further understood that the terms “comprises” and / or “comprising” or “includes” and / or “including”, when used in this specification, indicate the presence of the described features, areas, integers, steps, operations, elements, components and / or groups thereof, but do not exclude the presence or addition of one or more other features, areas, integers, steps, operations, elements, components and / or groups thereof.

[0053] Furthermore, relative terms such as “down” or “bottom” and “up” or “top” are used herein to describe the relationship between one element and another as illustrated in a figure. It will be understood that relative terms are intended to encompass different orientations of a device beyond those depicted in the figure. For example, if a device in a figure is flipped, an element described as being “down” of other elements will then be oriented “up” of those elements. Therefore, the term “down” can encompass both “down” and “up” orientations, depending on the specific orientation of the figure. Similarly, if a device in a figure is flipped, an element described as being “below” or “under” other elements will then be oriented “above” of those elements. Therefore, the term “below” or “under” can encompass both “up” and “down” orientations.

[0054] As used herein, “about” or “approximately” includes the stated value and means within an acceptable range of deviation for a particular value, considering the measurement in question and the error associated with the measurement of the particular quantity (i.e., the limitations of the measurement system) that a person skilled in the art would determine. For example, the term “about” may mean within one or more standard deviations of the stated value, or within ±30%, ±20%, ±10%, or ±5% of the stated value.

[0055] Unless otherwise defined, all terms used herein (including technical and scientific terms) shall have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure pertains. It will be further understood that terms, such as those defined in commonly used dictionaries, shall be interpreted as having a meaning consistent with their meaning in the relevant field and in the context of this disclosure, and shall not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

[0056] The embodiments are described herein with reference to illustrative cross-sectional illustrations as preferred embodiments. Therefore, variations in the shape of the illustrated area should be anticipated due to factors such as manufacturing techniques and / or tolerances. Consequently, the embodiments described herein should not be construed as limited to a specific shape of the area as illustrated herein, but rather include deviations in shape due to factors such as manufacturing. For example, an illustrated or described flat area may generally have rough and / or non-linear characteristics. Furthermore, the sharp corners of the illustrated area may be rounded. Therefore, the areas illustrated in the figures are schematic in nature, and their shapes are not intended to illustrate the precise shape of the area and are not intended to limit the scope of the claims.

[0057] The embodiments of this disclosure will now be described in detail with reference to the accompanying drawings.

[0058] Figure 1 A perspective view showing a display device according to an embodiment of the present disclosure.

[0059] refer to Figure 1 The display device 10 in this embodiment displays moving or still images. The display device 10 can refer to any electronic device that provides a display screen. For example, the display device 10 may include a television, laptop computer, monitor, electronic billboard, Internet of Things (IoT) device, mobile phone, smartphone, tablet PC, electronic watch, smartwatch, watch phone, head-mounted display device, mobile communication terminal, electronic notebook computer, e-book reader, portable multimedia player (PMP), navigation device, game console, digital camera, and camcorder, etc.

[0060] exist Figure 1 The diagram defines a first direction X (X-axis direction), a second direction Y (Y-axis direction), and a third direction Z (Z-axis direction). The first direction X (X-axis direction) and the second direction Y (Y-axis direction) may be perpendicular to each other, as may the first direction X (X-axis direction) and the third direction Z (Z-axis direction), and the second direction Y (Y-axis direction) and the third direction Z (Z-axis direction) be perpendicular to each other. The first direction X (X-axis direction) may refer to the horizontal direction in the plan view of the diagram, the second direction Y (Y-axis direction) may refer to the vertical direction in the plan view of the diagram, and the third direction Z (Z-axis direction) may refer to the vertical direction of the display device 10 in the diagram, i.e., the thickness direction. As used herein, direction may refer to the direction indicated by the arrow and the opposite direction, unless otherwise specifically stated. When it is desired to distinguish between these two opposite directions, one direction may be referred to as "one side in that direction," and the other direction may be referred to as "the opposite side in that direction." Figure 1 In this context, the side indicated by the arrow pointing in that direction is called the side in that direction, while the opposite side is called the opposite side in that direction.

[0061] In the following description of the surface of the display device 10, for ease of explanation, the surface facing the displayed image (i.e., the side indicated by the arrow pointing Z (Z-axis direction)) will be referred to as the upper surface, and the opposite surface will be referred to as the lower surface. However, it should be understood that this disclosure is not limited thereto. The surface and the opposite surface of each element may be referred to as the front surface and the rear surface, respectively, or as the first surface and the second surface, respectively. In addition, when describing the relative positions of the elements of the display device 10, the side pointing Z (Z-axis direction) may be referred to as the upper side, and the opposite side pointing Z (Z-axis direction) may be referred to as the lower side.

[0062] The shape of the display device 10 can be modified in various ways. In an embodiment, for example, when viewed in a plan view or when viewed in the third direction Z (Z-axis direction), the display device 10 may have one of the following shapes (or planar shapes): such as a rectangle with a longer horizontal side, a rectangle with a longer vertical side, a square, a quadrilateral with rounded corners (vertices), other polygons, a circle, etc.

[0063] In the implementation method, such as Figure 1 As shown, the display device 10 may include a display panel 100, a display driver 200, a circuit board 300, and a touch driver 400.

[0064] The display panel 100 may include a main area MA and a secondary area SBA. The main area MA may include a display area DA comprising pixels for displaying images and a non-display area NDA surrounding the display area DA. The main area MA and the secondary area SBA may be made of flexible materials that are bendable, foldable, or rollable.

[0065] Images can be displayed in the display area DA. No images are displayed in the non-display area NDA. The display area DA can be referred to as the active area, and the non-display area NDA can be referred to as the inactive area. The display area DA generally occupies the center of the display device 10. The non-display area NDA may be located outside the display area DA. The non-display area NDA may be defined as the edge of the main area MA of the display panel 100. The non-display area NDA may include lines providing signals to the display area DA and lines connecting the display driver 200 to the display area DA.

[0066] The auxiliary region SBA may extend from one side of the main region MA. When the auxiliary region SBA bends, it may overlap with the main region MA in the thickness direction (e.g., the third third direction Z or the Z-axis direction). The auxiliary region SBA may include display pads connected to the display driver 200 and the circuit board 300. According to another embodiment, the auxiliary region SBA may be omitted, and the display driver 200 and the display pads may be located in the non-display region NDA.

[0067] The display driver 200 can output signals and voltages for driving the display panel 100. The display driver 200 can be implemented as an integrated circuit (IC) and can be attached to the display panel 100 using chip-on-glass (COG) technology, chip-on-plastic (COP) technology, or ultrasonic bonding. In one embodiment, for example, the display driver 200 can be disposed in an auxiliary region SBA, and can overlap with the main region MA in the thickness direction when the auxiliary region SBA is bent. In another embodiment, for example, the display driver 200 can be mounted on a circuit board 300.

[0068] An anisotropic conductive film (ACF) can be used to attach the circuit board 300 to the display pads of the display panel 100. The circuit board 300 can be electrically connected to the display pads. The circuit board 300 can be a flexible printed circuit board (FPCB), a rigid printed circuit board (RPCB), or a flexible film (e.g., chip on film (COF)).

[0069] The touch driver 400 can be mounted on the circuit board 300. The touch driver 400 can output touch drive signals to drive a plurality of touch electrodes arranged on the outside or inside of the display panel 100.

[0070] Figure 2 for Figure 1 A cross-sectional view of the display device.

[0071] refer to Figure 2 The display panel 100 in this embodiment may include a display layer DPL and a polarizing film 190. The display layer DPL may include a substrate 110, a thin film transistor layer 130, a display element layer 150, and a thin film encapsulation layer 170.

[0072] The substrate 110 may be a base substrate or a base member. The substrate 110 may be a flexible substrate that is bendable, foldable, or rollable. In embodiments, for example, the substrate 110 may include, but is not limited to, a polymer resin (e.g., polyimide (PI)). According to another embodiment, the substrate 110 may include a glass material or a metal material.

[0073] A thin-film transistor layer 130 may be disposed on a substrate 110. The thin-film transistor layer 130 may be disposed in a display area DA, a non-display area NDA, and an auxiliary area SBA. The thin-film transistor layer 130 may include multiple thin-film transistor TFTs (see...). Figure 4 ).

[0074] The display element layer 150 may be disposed on the thin film transistor layer 130. The display element layer 150 may be located in the display area DA. The display element layer 150 may include, but is not limited to, at least one selected from organic light-emitting diodes including organic emission layers, quantum dot light-emitting diodes (quantum LEDs) including quantum dot emission layers, inorganic light-emitting diodes (inorganic LEDs) including inorganic semiconductors, and micro light-emitting diodes (micro LEDs).

[0075] A thin-film encapsulation layer 170 may be disposed on the display element layer 150. The thin-film encapsulation layer 170 may be disposed within the display area DA and the non-display area NDA. The thin-film encapsulation layer 170 may cover the upper and side surfaces of the display element layer 150 and protect the display element layer 150 from external oxygen and moisture. The thin-film encapsulation layer 170 may include at least one inorganic film and at least one organic film for encapsulating the display element layer 150.

[0076] A polarizing film 190 may be disposed on the thin-film encapsulation layer 170. The polarizing film 190 may be a structure designed to effectively prevent visibility degradation due to reflection of external light. The polarizing film 190 may include a linear polarizer and a retardation film. In embodiments, for example, the retardation film may be a λ / 4 plate (quarter-wave plate), but embodiments of this disclosure are not limited thereto.

[0077] In the implementation method, such as Figure 2 As shown, the portion of the display layer DPL corresponding to the subsidiary area SBA is bendable. When a portion of the display layer DPL is bent, the display driver 200, the circuit board 300, and the touch driver 400 can overlap with the main area MA in the third direction Z (Z-axis direction).

[0078] Figure 3 To show the location Figure 2 A plan view showing the arrangement of the emission area in the display area of ​​the display device.

[0079] refer to Figure 3 According to the implementation, the display area DA may include an emitting area EA and a non-emitting area NLA. The non-emitting area NLA may be positioned such that it surrounds the emitting area EA.

[0080] The emission region EA may include a first emission region EA1, a second emission region EA2, and a third emission region EA3 that emit light of different colors. The first emission region EA1, the second emission region EA2, and the third emission region EA3 may emit light of different colors. In an embodiment, for example, the first emission region EA1 may emit red light, the second emission region EA2 may emit green light, and the third emission region EA3 may emit blue light. The color of the light output from the first emission region EA1, the second emission region EA2, and the third emission region EA3 may depend on the emission layer EL described below (see [link to relevant documentation]). Figure 4 It changes according to the type.

[0081] In the implementation method, such as Figure 3 As shown, the first to third emission regions EA1, EA2, and EA3 have the same size and shape as each other, but this disclosure is not limited thereto. The size and shape of the first to third emission regions EA1, EA2, and EA3 can be adjusted differently based on desired characteristics.

[0082] At least one first emission region EA1, at least one second emission region EA2, and at least one third emission region EA3 arranged adjacent to each other may form or jointly define a single pixel group PXG. The pixel group PXG may be the smallest unit for emitting white light. However, the type and / or number of each of the pixels PX forming the pixel group PXG may vary depending on the implementation.

[0083] The non-emitting region (NLA) blocks light emitted from each of the first emitting region EA1, the second emitting region EA2, and the third emitting region EA3. Accordingly, the non-emitting region (NLA) helps prevent the mixing of light emitted from the first emitting region EA1, the second emitting region EA2, and the third emitting region EA3.

[0084] When viewed from above or in a plan view, the pixel defining layer 151 can be positioned to align with the non-emitting region NLA. The pixel defining layer 151 can define the emitting region EA and the non-emitting region NLA. The pixel defining layer 151 can surround the opening OP.

[0085] Figure 4 For along Figure 3 The cross-sectional view taken by line X1-X1'.

[0086] refer to Figure 4 In one embodiment, the thin-film transistor layer 130 may be disposed on the substrate 110. The thin-film transistor layer 130 may include a first buffer layer 111, a thin-film transistor TFT, a gate insulator 113, a first insulating layer 121, a capacitor electrode CPE, a second insulating layer 123, a first connection electrode CNE1, a first via layer 125, a second connection electrode CNE2, and a second via layer 127.

[0087] A first buffer layer 111 may be disposed on the substrate 110. The first buffer layer 111 can prevent the penetration of air or moisture. In an embodiment, for example, the first buffer layer 111 may include an inorganic insulating material.

[0088] A thin-film transistor (TFT) may be disposed on the first buffer layer 111 and may form a pixel circuit connected to each of a plurality of pixels. In an embodiment, for example, the TFT may be a driving transistor or a switching transistor of the pixel circuit. The TFT may include an active layer ACT, a source electrode SE, a drain electrode DE, and a gate electrode GE.

[0089] An active layer ACT may be disposed on the first buffer layer 111. The active layer ACT may overlap with the gate electrode GE in the third direction Z (Z-axis direction) and may be insulated from the gate electrode GE by the gate insulator 113. A portion of the active layer ACT may be made of conductive material, such that a portion of the active layer ACT may define the source electrode SE and the drain electrode DE.

[0090] The gate electrode GE can be disposed on the gate insulator 113. The gate electrode GE can overlap with the active layer ACT, and the gate insulator 113 is inserted between the gate electrode GE and the active layer ACT.

[0091] A gate insulator 113 may be disposed throughout the active layer ACT. The gate insulator 113 may cover the active layer ACT and the first buffer layer 111, and may insulate the active layer ACT from the gate electrode GE. The gate insulator 113 may be provided with a contact hole through which the first connection electrode CNE1 passes.

[0092] A first insulating layer 121 may cover the gate electrode GE and the gate insulator 113. The first insulating layer 121 may have a contact hole through which the first connecting electrode CNE1 passes. The contact hole of the first insulating layer 121 may be connected to the contact hole of the gate insulator 113 and the contact hole of the second insulating layer 123.

[0093] The capacitor electrode CPE may be disposed on the first insulating layer 121. The capacitor electrode CPE may overlap with the gate electrode GE in the third direction Z (Z-axis direction). The capacitor electrode CPE and the gate electrode GE may form a capacitor.

[0094] The second insulating layer 123 may cover the capacitor electrode CPE and the first insulating layer 121. The second insulating layer 123 is provided with a contact hole through which the first connection electrode CNE1 passes. The contact hole of the second insulating layer 123 may be connected to the contact hole of the first insulating layer 121 and the contact hole of the gate insulator 113.

[0095] The first connection electrode CNE1 may be disposed on the second insulating layer 123. The first connection electrode CNE1 can electrically connect the drain electrode DE of the thin-film transistor TFT to the second connection electrode CNE2. The first connection electrode CNE1 may be disposed in or inserted into a contact hole formed in the first insulating layer 121, the second insulating layer 123 and the gate insulator 113 to contact the drain electrode DE of the thin-film transistor TFT.

[0096] A first via layer 125 may cover the first connecting electrode CNE1 and the second insulating layer 123. The first via layer 125 may extend throughout the underlying structure to provide a flat surface. The first via layer 125 may provide a contact hole through which the second connecting electrode CNE2 passes.

[0097] The second connecting electrode CNE2 may be disposed on the first through-hole layer 125. The second connecting electrode CNE2 may be disposed in or inserted into a contact hole formed in the first through-hole layer 125 to contact the first connecting electrode CNE1. The second connecting electrode CNE2 can electrically connect the first connecting electrode CNE1 to the anode electrode AE.

[0098] The second via layer 127 may cover the second connecting electrode CNE2 and the first via layer 125. The second via layer 127 may provide a contact hole through which the anode electrode AE ​​passes.

[0099] The display element layer 150 may be disposed on the second via layer 127. The display element layer 150 may include an anode electrode AE, an emitter layer EL, a cathode electrode CE, and a pixel defining layer 151.

[0100] According to an embodiment, the anode electrode AE ​​may be disposed on the second via layer 127. The anode electrode AE ​​may be electrically connected to the drain electrode DE of the thin-film transistor TFT via the first connecting electrode CNE1 and the second connecting electrode CNE2.

[0101] The anode electrode AE ​​may include a first anode electrode AE1 disposed in a first emission region EA1, a second anode electrode AE2 disposed in a second emission region EA2, and a third anode electrode AE3 disposed in a third emission region EA3. The first anode electrode AE1, the second anode electrode AE2, and the third anode electrode AE3 may be spaced apart from each other on the second via layer 127.

[0102] The anode electrode AE ​​may have a stacked structure comprising layers of high work function materials such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), and indium oxide (In2O3), and layers of reflective materials such as silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), lead (Pb), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), or mixtures thereof. In embodiments, for example, the anode electrode AE ​​may have, but is not limited to, a multilayer structure of ITO / Mg, ITO / MgF2, ITO / Ag, and ITO / Ag / ITO.

[0103] According to embodiments of this disclosure, an emitting layer EL can be disposed on an anode electrode AE. The emitting layer EL may include a first emitting layer EL1 disposed in a first emitting region EA1, a second emitting layer EL2 disposed in a second emitting region EA2, and a third emitting layer EL3 disposed in a third emitting region EA3. The first emitting layer EL1, the second emitting layer EL2, and the third emitting layer EL3 can emit light of different colors. In one embodiment, for example, the first emitting layer EL1 can emit red light, the second emitting layer EL2 can emit green light, and the third emitting layer EL3 can emit blue light; however, this disclosure is not limited thereto.

[0104] According to an embodiment, the cathode electrode CE may be located on the emission layer EL in the emission region EA and the non-emission region NLA. The cathode electrode CE may be a common electrode. Accordingly, the cathode electrode CE may completely cover the first emission layer EL1, the second emission layer EL2, and the third emission layer EL3.

[0105] The cathode electrode CE can receive a common voltage or a low-level voltage. In this embodiment, when the anode electrode AE ​​receives a voltage equal to the data voltage and the cathode electrode CE receives a low-level voltage, a potential difference is formed between the anode electrode AE ​​and the cathode electrode CE, thereby allowing light to be emitted from the emitting layer EL.

[0106] According to one embodiment, the pixel defining layer 151 may be positioned to align with the non-emitting region NLA. The pixel defining layer 151 may be disposed on the second via layer 127 and may cover the edge of the anode electrode AE.

[0107] In a cross-sectional view, the pixel defining layer 151 may define an emitting region EA and a non-emitting region NLA. In a planar view, the pixel defining layer 151 may surround an opening OP and may expose an anode electrode AE ​​through the opening OP. The opening OP may be positioned to align with the emitting region EA.

[0108] According to embodiments of this disclosure, a thin-film encapsulation layer 170 may be disposed on a display element layer 150. The thin-film encapsulation layer 170 may be disposed in the emitting region EA and the non-emitting region NLA. The thin-film encapsulation layer 170 may include a first encapsulation layer 171, a second encapsulation layer 173, and a third encapsulation layer 175 stacked sequentially on top of each other.

[0109] According to an embodiment, a first encapsulation layer 171 may be disposed on the cathode electrode CE. The first encapsulation layer 171 has a uniform thickness along the contour of the underlying structure and may cover the underlying structure. Accordingly, the first encapsulation layer 171 may have a non-uniform upper surface with different levels or heights.

[0110] The first encapsulation layer 171 may include one or more inorganic insulating materials. In an embodiment, for example, the first encapsulation layer 171 may include at least one selected from aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon oxide, silicon nitride, and silicon oxynitride.

[0111] According to embodiments of this disclosure, a second encapsulation layer 173 may be located on a first encapsulation layer 171. The second encapsulation layer 173 may extend over the first encapsulation layer 171, which has an uneven upper surface with varying levels or heights, to provide a flat surface. The second encapsulation layer 173 may protect the display element layer 150 from particles.

[0112] The second encapsulation layer 173 may include an organic material. In an embodiment, for example, the second encapsulation layer 173 may include a silicone resin, an acrylic resin, an epoxy resin, or a mixture thereof.

[0113] According to embodiments of this disclosure, a third encapsulation layer 175 may be located on the second encapsulation layer 173. The third encapsulation layer 175 may completely cover the second encapsulation layer 173. The third encapsulation layer 175 may include multiple layers with different functions. In an embodiment, the third encapsulation layer 175 may include a first layer 175a, a second layer 175b, and a third layer 175c. The first layer 175a, the second layer 175b, and the third layer 175c may be stacked sequentially on top of each other. The third encapsulation layer 175 may include a porous layer. A more detailed description thereof will be given below.

[0114] In the manufacturing process of the display device 10, the first layer 175a, the second layer 175b, and the third layer 175c can be formed continuously in the same process. This manufacturing process will be described in more detail later.

[0115] A polarizing film 190 may be disposed on the thin-film encapsulation layer 170. The polarizing film 190 may completely cover the thin-film encapsulation layer 170. The polarizing film 190 may include an iodinated organic material. Any repeated detailed descriptions thereof will be omitted.

[0116] Figure 5 for Figure 4 An enlarged cross-sectional view of region A. Figure 6 for Figure 5 Enlarged cross-sectional view of region C. Figure 7 for Figure 5 Enlarged cross-sectional view of region E.

[0117] refer to Figures 5 to 7 The third encapsulation layer 175 according to an embodiment may include an inorganic insulating material. In an embodiment, for example, the third encapsulation layer 175 may include silicon nitride. It should be noted that the third encapsulation layer 175 may include silicon nitride, and may include a certain range of oxygen in the third encapsulation layer 175. In an embodiment, at least one of the first layer 175a, the second layer 175b, and the third layer 175c may include oxygen-doped silicon nitride.

[0118] According to an embodiment, a first layer 175a may be located on a second encapsulation layer 173. The first layer 175a may have pores. A pore in the first layer 175a can refer to a void space formed by chemical bonds. The pores may be non-uniform, and their size or shape may also be non-uniform. The term "having pores" is used interchangeably with various terms (such as "having porosity," "having pores," or "having voids"). The term porosity can refer to the percentage of void space in a layer by volume. In other words, the first layer 175a may also be referred to as a porous inorganic membrane.

[0119] According to an embodiment, a second layer 175b may be disposed on a first layer 175a. The second layer 175b may comprise an inorganic membrane that is denser than the inorganic membrane of the first layer 175a. In this embodiment, the second layer 175b may have a higher membrane density than the first layer 175a. In an embodiment, for example, the membrane density of the first layer 175a may be equal to or less than about 1.9 grams per cubic centimeter (g / cm³). 3 Furthermore, the density of the second 175b membrane layer can reach approximately 1.9 g / cm³. 3 Approximately 2.2 g / cm³ 3 Within the range.

[0120] In the implementation method, such as Figure 5As shown, the second layer 175b may not have porosity, that is, there are no pores in the second layer 175b, but this disclosure is not limited thereto. In an embodiment, the second layer 175b may have a porosity lower than that of the first layer 175a and the third layer 175c.

[0121] The second layer 175b effectively prevents the penetration of moisture from the outside. In an embodiment, for example, the water vapor transmission rate (WVTR) of the second layer 175b may be equal to or less than 10. -3 grams per square meter per day (g / m 2 (·day). Additionally, the second layer 175b can increase interfacial adhesion strength, making it physically difficult for the first layer 175a and the third layer 175c to separate. In an embodiment, for example, the second layer 175b may have a compressive stress in the range of about -250 MPa to about -150 MPa.

[0122] According to an embodiment, a third layer 175c may be disposed on the second layer 175b and may contact the polarizing film 190. The third layer 175c may have pores. In other words, the third layer 175c may also be referred to as a porous inorganic film. The pore characteristics of the third layer 175c may be the same as those of the first layer 175a, and any repeated detailed descriptions thereof will be omitted.

[0123] The third layer 175c may have a lower film density than the second layer 175b. In an embodiment, for example, the film density of the third layer 175c may be equal to or less than about 1.9 g / cm³. 3 Each of the first layer 175a and the third layer 175c may have a compressive stress of approximately -200 MPa or less.

[0124] In some embodiments, each of the first layer 175a and the third layer 175c may include an oxygen content lower than that of the second layer 175b. In embodiments, for example, the oxygen content (e.g., by weight % of oxygen) of each of the first layer 175a and the third layer 175c may be about 10% or less, and the oxygen content of the second layer 175b may be in the range of about 10% to about 20%.

[0125] In some embodiments, the height (or thickness) Ha of the first layer 175a may be less than the height Hb of the second layer 175b. Additionally, the height Hc of the third layer 175c may be less than the height Hb of the second layer 175b. In embodiments, for example, each of the height Ha of the first layer 175a and the height Hc of the third layer 175c may be in the range of about 10% to about 15% of the total height H175 of the third encapsulation layer 175. The height Ha of the first layer 175a may be approximately equal to the height Hc of the third layer 175c, but this disclosure is not limited thereto.

[0126] refer to Figure 6 According to the embodiment, the first layer 175a can absorb the exhaust gas formed in the organic layer through the pores. As described above, the pores of the first layer 175a can refer to the void spaces formed by the chemical bonds of silicon (Si), nitrogen (N), oxygen (O) and hydrogen (H) contained in the first layer 175a.

[0127] In the manufacturing process of the display device 10, the second encapsulation layer 173, which includes an organic material, can generate venting. Typically, venting from the second encapsulation layer 173 can degrade the reliability of the display device 10. Therefore, in the display device 10 according to an embodiment of the present disclosure, the first layer 175a, having porosity, is formed in direct contact with the second encapsulation layer 173, which is an organic layer, so that venting generated from the second encapsulation layer 173 can be effectively absorbed into the pores of the first layer 175a. This manufacturing process will be described in more detail later.

[0128] refer to Figure 7 According to the embodiment, the third layer 175c can absorb ammonia (NH3) in the pores. As mentioned above, the pores of the third layer 175c can refer to the void spaces formed by the chemical bonds of silicon (Si), nitrogen (N), oxygen (O) and hydrogen (H) contained in the third layer 175c.

[0129] According to one embodiment, the third layer 175c may include ammonia (NH3) that failed to react on the surface and inside during the manufacturing process or reliability assessment. In this embodiment, for example, if the ammonia (NH3) contained in the third layer 175c and the iodine ions (I-) contained in the polarizing film 190... - If they react with each other, there may be a defect where the polarizing film changes color at 190°.

[0130] Accordingly, in the display device 10 according to an embodiment of the present disclosure, the third layer 175c having holes is formed to be in direct contact with the polarizing film 190 containing iodine ions, so that ammonia (NH3) can be effectively absorbed in the holes of the third layer 175c. This manufacturing process will be described in more detail later.

[0131] Figure 8 To show Figure 1 A cross-sectional view of a display device according to another embodiment.

[0132] refer to Figure 8 ,according to Figure 8 The display layer DPL included in the display device 30 of the embodiment can be coupled with the display layer DPL according to the embodiment. Figure 2 The display layer DPL included in the display device 10 of the embodiment is basically the same, except that the former includes a touch sensor layer 180 on the thin film encapsulation layer 170. In this embodiment, such as Figure 8As shown, the display panel 100 included in the display device 30 may include a substrate 110, a thin-film transistor layer 130, a display element layer 150, a thin-film encapsulation layer 170, a touch sensor layer 180, and a polarizing film 190. In the following description, the differences between the display device 30 and the display device 10 will be focused on, and similarities will be omitted or simplified. Figure 2 Any repeated detailed descriptions of the same or similar elements shown in the diagram.

[0133] In one embodiment, the touch sensor layer 180 may be disposed on the thin-film encapsulation layer 170. The touch sensor layer 180 may be positioned to cover the display area DA and the non-display area NDA. The touch sensor layer 180 may sense the user's touch through mutual capacitance sensing or self-capacitance sensing.

[0134] A polarizing film 190 may be located on the touch sensor layer 180. The polarizing film 190 may contact the touch sensor layer 180. Any repeated detailed descriptions thereof will be omitted.

[0135] Figure 9 for Figure 8 A cross-sectional view of the display area in a display device. Figure 10 for Figure 9 An enlarged cross-sectional view of region P. In the following description, the differences between display device 30 and display device 10 will be focused on, and details will be omitted or simplified. Figure 3 Any repeated detailed descriptions of the same or similar elements shown in the diagram.

[0136] refer to Figure 9 In one embodiment, the third layer 175c of the third encapsulation layer 175 included in the display device 30 is in contact with the touch sensor layer 180. The third layer 175c can be completely covered by the touch sensor layer 180.

[0137] According to embodiments of this disclosure, a touch sensor layer 180 may be disposed on a thin-film encapsulation layer 170. The touch sensor layer 180 may include a touch buffer layer 181, a touch electrode TE, and a touch insulating layer 183.

[0138] A touch buffer layer 181 may be disposed on the thin-film encapsulation layer 170, and in some embodiments, the touch buffer layer 181 may be omitted. The touch buffer layer 181 may comprise one or more inorganic insulating materials. In embodiments, for example, the touch buffer layer 181 may comprise at least one selected from alumina, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon oxide, silicon nitride, and silicon oxynitride.

[0139] The touch electrode TE may be disposed in the non-emitting region NLA and may be located on the touch buffer layer 181. The touch electrode TE may include any electrode capable of sensing the user's touch. The touch electrode TE may include a conductive metallic material. In embodiments, for example, the touch electrode TE may include copper (Cu), aluminum (Al), and magnesium (Mg).

[0140] A touch insulating layer 183 may be disposed on the touch buffer layer 181 and the touch electrode TE. The touch insulating layer 183 may completely cover the touch buffer layer 181 and the touch electrode TE. The touch insulating layer 183 may include multiple layers with different functions (or different physical or chemical properties). The touch insulating layer 183 may include a first touch layer 183d and a second touch layer 183e. The first touch layer 183d and the second touch layer 183e may be stacked sequentially on top of each other. The touch insulating layer 183 may include a porous layer. A more detailed description thereof will be given below.

[0141] A polarizing film 190 may be located on the touch sensor layer 180. The polarizing film 190 may completely cover the touch sensor layer 180. Any repeated detailed descriptions thereof will be omitted.

[0142] refer to Figure 9 and Figure 10 The touch insulating layer 183 according to the embodiment may include an inorganic insulating material. In the embodiment, for example, the touch insulating layer 183 may include silicon nitride.

[0143] According to an embodiment, the first touch layer 183d and the second touch layer 183e of the touch sensor layer 180 included in the display device 30 may overlap with the first layer 175a, the second layer 175b, and the third layer 175c of the third encapsulation layer 175 in the third direction Z (Z-axis direction). The first layer 175a, the second layer 175b, and the third layer 175c of the third encapsulation layer 175 included in the display device 30 may have the same structure and characteristics as the first layer 175a, the second layer 175b, and the third layer 175c of the third encapsulation layer 175 included in the display device 10. Accordingly, any repeated detailed descriptions will be omitted.

[0144] According to an embodiment, the first touch layer 183d can be positioned to contact the touch buffer layer 181 and the touch electrode TE. The first touch layer 183d can prevent the penetration of moisture from the outside. In an embodiment, for example, the water vapor transmission rate (WVTR) of the first touch layer 183d can be equal to or less than about 10. -3 g / m 2• Day. Additionally, the first touch layer 183d can increase the interfacial adhesion strength, making it physically difficult for the touch buffer layer 181 and the second touch layer 183e to separate. In an embodiment, for example, the first touch layer 183d may have a compressive stress in the range of about -250 MPa to about -150 MPa.

[0145] According to an embodiment, the second touch layer 183e may be disposed on the first touch layer 183d and may contact the polarizing film 190. The second touch layer 183e may have pores. In other words, the second touch layer 183e may also be referred to as a porous inorganic film. The pore characteristics of the second touch layer 183e may be the same as the pore characteristics of the first layer 175a of the third encapsulation layer 175 described above. Accordingly, any repeated detailed descriptions will be omitted.

[0146] The second touch layer 183e may have a relatively lower film density than the first touch layer 183d. In an embodiment, for example, the film density of the first touch layer 183d may be about 1.9 g / cm³. 3 Approximately 2.2 g / cm³ 3 Within this range, and the film density of the second touch layer 183e can be equal to or less than about 1.9 g / cm³. 3 .

[0147] In some embodiments, the second touch layer 183e may include an oxygen content lower than that of the first touch layer 183d. In embodiments, for example, the oxygen content of the second touch layer 183e may be about 10% or less, and the oxygen content of the first touch layer 183d may be in the range of about 10% to about 20%.

[0148] In some embodiments, the height He of the second touch layer 183e may be less than the height Hd of the first touch layer 183d. In some embodiments, for example, the height He of the second touch layer 183e may be in the range of about 10% to about 15% of the height H183 of the touch insulating layer 183.

[0149] In the implementation method, such as Figure 10 As shown, the first touch layer 183d may not have pores, but this disclosure is not limited thereto. In another embodiment, the first touch layer 183d may include a lower porosity than the second touch layer 183e.

[0150] According to one embodiment, the second touch layer 183e may include ammonia (NH3) that failed to react on the surface and internally during the manufacturing process or reliability assessment. In this embodiment, for example, if the ammonia (NH3) contained in the second touch layer 183e and the iodine ions (I- ions) contained in the polarizing film 190... -If they react with each other, a defect such as discoloration of the polarizing film 190 may occur. Accordingly, in the display device 30 according to an embodiment of the present disclosure, the second touch layer 183e having holes is formed to directly contact the polarizing film 190 containing iodine ions so that ammonia (NH3) can be absorbed into the holes of the second touch layer 183e.

[0151] The manufacturing process will be described in detail below. Figure 4 An implementation method for the thin-film encapsulation layer and polarizing film of a display device. Figure 11 and Figure 12 A cross-sectional view illustrating an embodiment of the process for manufacturing a thin-film encapsulation layer. Figure 13 for Figure 12 An enlarged cross-sectional view of region S.

[0152] refer to Figures 11 to 13 In this embodiment, a first encapsulation layer 171 and a second encapsulation layer 173 are formed on the display element layer 150. The structure and characteristics of the display element layer 150, the first encapsulation layer 171, and the second encapsulation layer 173 are the same as those described above. Figure 4 The structure and characteristics of the display element layer 150, the first encapsulation layer 171 and the second encapsulation layer 173 are substantially the same, and any repeated detailed descriptions thereof will be omitted.

[0153] Subsequently, a third encapsulation layer 175 is formed on the second encapsulation layer 173 (see...). Figure 4 The first layer 175a. The process for forming the first layer 175a and the reactions within the membrane will be described below.

[0154] In this embodiment, the first layer 175a is deposited as a contact with the second encapsulation layer 173. Figure 12 (P1 in the text). The first layer 175a can be formed by a chemical vapor deposition (CVD) process. The process for forming the first layer 175a can be a deposition process using high-energy plasma.

[0155] The first layer 175a may include multiple pores. The deposition conditions can be determined by adjusting the amount of reactive gases (e.g., silane, hydrogen, ammonia, and nitrogen) under low-power conditions to make the first layer 175a porous.

[0156] In this embodiment, during the deposition of the first layer 175a, the second encapsulation layer 173 may release exhaust gas due to the high-energy plasma used to form the first layer 175a. Figure 13 (P2 in the text). A portion of the exhaust gas can be removed as flue gas in the deposition chamber forming the first layer 175a, but some exhaust gas may remain in the display device 10.

[0157] In this implementation, because the first layer 175a has multiple pores, the remaining exhaust gas can be absorbed into the pores of the first layer 175a. Figure 13 (P3 in the text).

[0158] Figure 14 and Figure 15 To demonstrate manufacturing Figure 4 A cross-sectional view illustrating an implementation method of the thin-film encapsulation layer and polarizing film process. Figure 16 for Figure 15 An enlarged cross-sectional view of region T.

[0159] Subsequently, reference Figures 14 to 16 The second layer 175b is deposited on the first layer 175a of the third encapsulation layer 175. In this process, the deposition conditions can be determined by adjusting the amount of reactive gases (e.g., silane, hydrogen, ammonia, and nitrogen) under higher power conditions than those of the deposition process that forms the first layer 175a, so that the second layer 175b has pores.

[0160] Through this process, the second layer 175b of the third encapsulation layer 175 can have a higher film density and oxygen content than the first layer 175a. In this embodiment, as described, the second layer 175b can have denser film properties than the first layer 175a. Any further detailed description will be omitted.

[0161] Subsequently, the third layer 175c is deposited on the second layer 175b of the third encapsulation layer 175.

[0162] The third layer 175c may include multiple pores. The deposition conditions for making the third layer 175c porous can be determined by adjusting the amount of reactive gases (e.g., silane, hydrogen, ammonia, and nitrogen) under low power conditions.

[0163] Although the first layer 175a, the second layer 175b, and the third layer 175c can be formed separately in the embodiment shown in the accompanying drawings, they can also be formed continuously in the same chamber. In this embodiment, the first layer 175a, the second layer 175b, and the third layer 175c can be formed in the same chamber by simply changing the deposition conditions. Therefore, the display device 10 according to the embodiment can be easily manufactured.

[0164] Finally, the polarizing film 190 is attached to the entire surface of the third layer 175c. The internal reaction of the third layer 175c will be described below.

[0165] refer to Figure 16In this embodiment, the third layer 175c may include ammonia (NH3) internally or on its surface. The ammonia (NH3) included in the third layer 175c can be classified into a first type Ta and a second type Tb. The first type Ta may be part of the reactive gas that failed to become silicon nitride during the process of forming the third layer 175c and remains there. On the other hand, the second type Tb may be formed due to the reaction between moisture (H2O) introduced from the outside and silicon nitride (SiN). Although the formation methods of the first type Ta and the second type Tb are different, the first type Ta and the second type Tb may also be the same ammonia (NH3). In this embodiment, as described above, if the ammonia (NH3) contained in the third layer 175c reacts with the iodine ions (I- ions) contained in the polarizing film 190... - If the polarizing film 190 reacts, it may change color, and thus the reliability of the display device 10 may deteriorate.

[0166] Accordingly, in the display device 10 according to the embodiments of the present disclosure, ammonia (NH3) can be effectively absorbed in the pores of the third layer 175c, so that the ammonia (NH3) remaining inside the third layer 175c does not react with the iodine ions (I- ions) contained in the polarization film 190. - )reaction.

[0167] Thus, it can form Figure 4 The thin film encapsulation layer 170 and polarizing film 190 are shown in the figure.

[0168] In the display device 10 according to an embodiment of the present disclosure, an inorganic insulating film (inorganic film) having pores is formed in direct contact with a film containing organic material, such that reactive material generated in the film containing organic material can be absorbed into the pores. This improves the reliability of the display device 10 according to the embodiment.

[0169] The display device according to one embodiment of the present disclosure can be applied to various electronic devices. The electronic device according to one embodiment of the present disclosure includes the aforementioned display device, and may further include modules or devices with additional functions in addition to the display device.

[0170] Figure 17 This is a block diagram of an electronic device according to one embodiment of the present disclosure.

[0171] refer to Figure 17 An electronic device 1 according to one embodiment of the present disclosure may include a display module 11, a processor 12, a memory 13, and a power module 14.

[0172] The processor 12 may include at least one of a central processing unit (CPU), an application processor (AP), a graphics processing unit (GPU), a communication processor (CP), an image signal processor (ISP), and a controller.

[0173] The memory 13 can store data information required for the operation of the processor 12 or the display module 11. When the processor 12 executes the application program stored in the memory 13, it transmits image data signals and / or input control signals to the display module 11, and the display module 11 can process the received signals and output image information through the display screen.

[0174] The power module 14 may include a power supply module (e.g., a power adapter or battery) and a power conversion module that converts the power supplied by the power supply module to generate the power required for the operation of the electronic device 1.

[0175] At least one of the components of an electronic device 1 according to one embodiment of the present disclosure may be included in a display device 10 according to an embodiment of the present disclosure. Additionally, some modules that are functionally included in a single module may be included in the display device 10, and other modules may be provided separately from the display device 10. For example, the display device 10 may include a display module 11, and the processor 12, memory 13, and power module 14 may be provided in the form of other devices in the electronic device 1 besides the display device 10.

[0176] Figure 18 This is a schematic diagram of an electronic device according to various embodiments of the present disclosure.

[0177] refer to Figure 18 The various electronic devices used in the display device 10 according to embodiments of the present disclosure may include not only image display electronic devices (e.g., smartphone 10_1a, tablet PC (personal computer) 10_1b, laptop computer 10_1c, TV 10_1d, and desktop monitor 10_1e), but also wearable electronic devices including display modules (e.g., smart glasses 10_2a, head-mounted display 10_2b, and smartwatch 10_2c) and vehicle electronic devices 10_3 including display modules (e.g., CID (central information display) and interior mirror display arranged on the dashboard, center console, and instrument panel of a car).

[0178] Although embodiments of the present disclosure have been described with reference to the accompanying drawings, those skilled in the art will understand that various modifications and changes can be made without departing from the technical concept or essential characteristics of the present disclosure. Therefore, it should be understood that the embodiments mentioned above are illustrative in all respects rather than limiting.

[0179] This invention should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete and will fully convey the concept of the invention to those skilled in the art.

[0180] Although the invention has been specifically shown and described with reference to embodiments thereof, those skilled in the art will understand that various changes in form and detail may be made without departing from the spirit or scope of the invention as defined by the appended claims.

Claims

1. A display device comprising a display panel, the display panel comprising: a substrate comprising an emission area and a non-emission area; a display element layer comprising an emission layer disposed in the emission area of the substrate; a thin film encapsulation layer disposed on the display element layer, wherein the thin film encapsulation layer comprises a first encapsulation layer, a second encapsulation layer, and a third encapsulation layer; and a polarizing film disposed on the thin film encapsulation layer, wherein the third encapsulation layer comprises: a first layer having a hole; a second layer disposed on the first layer and having a film density higher than that of the first layer; and a third layer disposed on the second layer and having a hole. 2.The display device of claim 1, wherein each of the first layer, the second layer, and the third layer comprises silicon nitride doped with oxygen. 3.The display device of claim 2, wherein the third layer has a film density lower than that of the second layer. 4.The display device of claim 3, wherein 5.The display device of claim 4, wherein each of the first layer and the third layer has a film density equal to or less than 1.9 g / cm 3 and The film density of the second layer is equal to or greater than 1.9 g / cm 3 and equal to or less than 2.2 g / cm 3 . each of the first layer and the third layer has a compressive stress of -200 MPa or less, and the second layer has a compressive stress in a range of -250 MPa to -150 MPa. 6.The display device of claim 4, wherein the second layer has a porosity lower than that of the first layer and that of the third layer. 7.The display device of claim 1, wherein an oxygen content of the second layer is in a range of 10% to 20%, and an oxygen content of each of the first layer and the third layer is equal to or less than 10%. 8.The display device of claim 1, wherein each of a thickness of the first layer and a thickness of the third layer is less than a thickness of the second layer. 9.The display device of claim 8, wherein each of the thickness of the first layer and the thickness of the third layer is in a range of 10% to 15% of a total thickness of the thin film encapsulation layer. 10.The display device of claim 8, wherein holes of the first layer are non-uniform, and holes of the third layer are non-uniform. 11.The display device of claim 1, wherein the second encapsulation layer comprises an organic material, and the polarizing film comprises iodine ions. 12.The display device of claim 11, wherein the first layer contacts the second encapsulation layer, and the third layer contacts the polarizing film. 13.The display device of claim 1, further comprising: a touch sensor layer disposed between the thin film encapsulation layer and the polarizing film, wherein the touch sensor layer comprises a first touch layer and a second touch layer disposed on the first touch layer, wherein the second touch layer has a hole and contacts the polarizing film, and wherein a film density of the second touch layer is less than a film density of the first touch layer. 14.The display device of claim 13, wherein 15.An electronic device comprising the display device of any one of claims 1 to 14. the film density of the first touch layer is equal to or greater than 1.9 g / cm 3 and equal to or less than 2.2 g / cm 3 , and the film density of the second touch layer is equal to or less than 1.9 g / cm 3 . ​ 16. A method for manufacturing a display device, the method comprising: forming a first encapsulation layer containing an inorganic material over a substrate, forming a second encapsulation layer including an organic material over the first encapsulation layer, and then forming a third encapsulation layer including a plurality of different layers over the second encapsulation layer; and forming a polarizing film over the third encapsulation layer, wherein the third encapsulation layer includes: a first layer in contact with the second encapsulation layer and having a hole; a second layer provided over the first layer and having a film density higher than a film density of the first layer; and a third layer provided over the second layer and in contact with the polarizing film and having a hole.

17. The method according to claim 16, wherein the first layer absorbs exhaust gas generated in the second encapsulation layer in the hole of the first layer.

18. The method according to claim 17, wherein a film density of the third layer is less than a film density of the second layer.

19. The method according to claim 18, wherein the third layer absorbs ammonia gas in the hole of the third layer.

20. The method of claim 19 wherein the forming of the third encapsulation layer comprises: forming the first layer, the second layer, and the third layer in the same chamber.

Citation Information

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