Ka-band 2000W solid-state power amplifier

Abstract

The invention discloses a Ka-band 2000W solid-state power amplifier, which relates to the field of power amplifiers, and comprises a Ka monitoring and pre-stage power amplifier, a Ka final-stage power amplifier and a Ka high-power synthesis network, the Ka monitoring and pre-stage output end is in flexible connection with the eight Ka last-stage power amplifiers, and the Ka last-stage power amplifiers are in hard connection with the Ka high-power synthesis network through waveguides. A solid-state system is adopted for design, a domestic GaN solid-state power amplifier chip is utilized for synthesis, the power amplifier adopts a low-voltage working mode, the power chip is long in service life, the linear index of the power amplifier is good, and the power amplifier is different from the defects that a vacuum tube power amplifier is large in size and weight, has breakdown risks during high-voltage working and cannot respond to emergency scenes immediately. The Ka-band high-power amplifier is a development trend of a Ka-band high-power amplifier, and has the advantages of high output power and convenience in maintenance.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of power amplifiers, in particular to a Ka-band 2000W solid-state power amplifier. BACKGROUND

[0002] The statements in this section merely provide background information related to the present disclosure and can not constitute the prior art.

[0003] With the rapid development of millimeter wave communication systems, especially in deep space TT&C, satellite communication and other fields, the current low frequency band resources are increasingly crowded, and the low working frequency band and narrow working frequency band have become the bottleneck restricting its development. Developing millimeter wave communication systems is the trend of the times.

[0004] With the increasing detection distance, the transmission capability of the uplink is increasingly high, and new requirements are put forward for the output power of the Ka-band power amplifier, which is an important part of the Ka-band communication system. The development of Ka-band kilowatt solid-state power amplifier is imminent. Technical research is carried out to lay a solid foundation for future Ka-band communication applications to meet the needs of future millimeter wave communication.

[0005] Ka-band high-power power amplifiers are mainly divided into vacuum tube power amplifiers and solid-state power amplifiers. Although the vacuum tube power amplifier can realize Ka-band 2000W power output, it has the shortcomings of short power tube life, high replacement cost, large volume and weight, high-voltage working risk of breakdown, preheating time, and inability to respond to emergency scenes in time. With the rapid development of microwave integrated technology and domestic GaN power amplifier chips, Ka-band solid-state power amplifier technology has made long-term progress, and its reliability, life and linearity are much better than vacuum tube power amplifiers. The application of vacuum tube power amplifiers in Ka-band is being rapidly replaced.

[0006] Through the publicly available literature, it can be known that the Ka-band solid-state power amplifier technology of hundreds of watts is increasingly mature and has been widely used in satellite communication and TT&C, radar detection, precision guidance and electronic countermeasure type engineering. However, there are few reports on Ka-band solid-state power amplifiers of kilowatts. SUMMARY

[0007] The purpose of the present application is to provide a Ka-band 2000W solid-state power amplifier to solve the above problems in the prior art.

[0008] The technical scheme of the present application is as follows: A Ka-band 2000W solid-state power amplifier, comprising: Ka monitoring and pre-stage, Ka final-stage power amplifier and Ka high-power synthesis network; The Ka monitoring and preamp output terminals are softly connected to eight Ka final stage power amplifiers, and the Ka final stage power amplifiers are hard-connected to the Ka high-power combining network using waveguides.

[0009] Furthermore, the Ka monitor and preamplifier are used to preamplify the small excitation signal to the required driving power and provide sufficient gain, and then output eight equal-amplitude and in-phase radio frequency signals through a 1-to-8 splitter.

[0010] Furthermore, each Ka final stage power amplifier is connected to the Ka monitor and preamplifier via an ultra-stable phase cable to amplify the corresponding RF signal to the 500W level.

[0011] Furthermore, the Ka high-power combining network is hard-connected to eight Ka final-stage power amplifiers via waveguides, and adopts a symmetrical three-stage waveguide magic-T space combining structure to combine eight ≥500W signals in pairs step by step, ultimately combining them into a 2000W level.

[0012] Furthermore, the parameter information of the eight Ka final stage power amplifiers is reported to the Ka monitoring and preamplifier via CAN bus communication to monitor and control their parameters. At the same time, the forward and reverse power output of the Ka band 2000W power amplifier is detected and corresponding power control is performed.

[0013] Furthermore, the parameter information includes: output power, reflected power, and operating current.

[0014] Furthermore, the Ka monitoring and front-end include: Predistortion module, 20W power module, detection unit, monitoring and processing unit and power supply unit; The predistortion module has independently adjustable amplitude compensation and phase compensation links, which are used to improve the amplitude early compression and slow compression nonlinearity characteristics of GaN power chips, so that the third-order intermodulation index of the whole machine meets the linearity requirements. The 20W power module is located after the predistortion module and is used to amplify small signals to a medium power level to meet the input requirements of the Ka final stage power amplifier. The detection unit is used for real-time detection of the forward and reverse power after synthesis by the Ka high-power combining network; The monitoring and processing unit completes the monitoring and reporting of the parameters of this socket and the final stage power amplifier.

[0015] Furthermore, the Ka-band final stage power amplifier is a 500W solid-state power amplifier in the Ka band, comprising: Drive unit, final stage unit, monitoring and processing unit, and power supply unit; The driving unit is initially synthesized using four 10W-level GaN power chips; The final stage unit is synthesized using 96 GaN power chips with a power rating of 10W each; The monitoring and processing unit collects the forward / reverse power, current, voltage, and temperature parameters of the machine in real time, and reports them to the Ka monitoring and front-end via the CAN bus. It completes over-temperature, over-reflection, and over-current protection, as well as power on / off and ALC command execution, realizing module-level in-situ hot-swappable maintenance.

[0016] Furthermore, the synthesis method of the final-level unit is as follows: Two 10W-level GaN power chips are combined to form the most basic power module. Eight such power modules are then combined into a standardized power component. Based on this, six power components are then combined to achieve a power output of 500W.

[0017] Furthermore, the Ka final stage power amplifier has a reserved amplitude and phase modulator inside, which can be used for amplitude and phase adjustment of a single signal when necessary.

[0018] Compared with existing technologies, the advantages of this invention are: 1. Solid-state design. This invention's Ka-band 2000W solid-state power amplifier is designed using a solid-state design, synthesized using domestically produced GaN solid-state power amplifier chips. The amplifier operates at low voltage, resulting in a long power chip lifespan and excellent linearity. Unlike vacuum tube amplifiers, which are large in size and weight, pose a risk of breakdown under high voltage, and cannot respond to emergency scenarios in a timely manner, this amplifier gradually replaces vacuum tube amplifiers, representing the development trend of high-power Ka-band amplifiers.

[0019] 2. High Output Power. This invention employs a solid-state system, achieving a continuous wave output power ≥2000W, on the order of kilowatts, a level rarely reported in existing literature. It requires a single Ka-band final stage power amplifier with an output power exceeding 500W, while simultaneously employing spatial combining technology to achieve high-efficiency combining in the Ka band, reaching an output power in the 2000W range. High requirements are placed on the output power of the final stage power amplifier, as well as the amplitude and phase consistency and stability of each signal path. High-efficiency combining is achieved through precise control of the attenuation and phase values ​​of each input cable of the Ka-band final stage power amplifier and the waveguides of each branch of the combining network, as well as the gain and phase adjustment of the Ka-band final stage power amplifier.

[0020] 3. Easy Maintenance. This invention designs the Ka monitoring, preamplifier, and Ka final stage power amplifier units as a standardized 4U rack-mountable enclosure. The main components inside the enclosure, such as the power amplifier module, power supply, and monitoring unit, are modularized and can all be replaced in situ. Not only can the structure be replaced in situ, but the technical specifications remain consistent, and the power synthesis efficiency is not affected by module replacement. The power amplifier's fan is designed as a separately detachable fan assembly, making maintenance simple and convenient. Attached Figure Description

[0021] Figure 1This is a schematic diagram of the Ka-band 2000W solid-state power amplifier of the present invention; Figure 2 yes Figure 1 Ka monitoring and front-end principle diagram; Figure 3 yes Figure 1 A schematic diagram of the Ka-band 500W solid-state power amplifier principle; Figure 4 yes Figure 1 A schematic diagram of the Ka high-power combining network principle. Detailed Implementation

[0022] It should be noted that relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0023] The features and performance of the present invention will be further described in detail below with reference to embodiments.

[0024] Example 1 Please see Figures 1-4 A Ka-band 2000W solid-state power amplifier specifically includes the following modules: Ka monitoring and preamplifier, Ka final stage power amplifier and Ka high power synthesis network; The Ka monitoring and preamp output terminals are softly connected to eight Ka final stage power amplifiers, and the Ka final stage power amplifiers are hard-connected to the Ka high-power combining network using waveguides.

[0025] In this embodiment, specifically, the Ka monitor and preamplifier are used to preamplify the small excitation signal to the required driving power and provide sufficient gain, and then output eight equal-amplitude and in-phase radio frequency signals through a 1-to-8 splitter.

[0026] In this embodiment, specifically, each Ka final stage power amplifier is connected to the Ka monitor and the preamplifier via an ultra-stable phase cable, which is used to amplify the corresponding RF signal to the 500W level.

[0027] In this embodiment, specifically, the Ka high-power combining network is hard-connected to eight Ka final-stage power amplifiers via waveguides. It employs a symmetrical three-stage waveguide Magic-T spatial combining structure to combine eight ≥500W signals in pairs, ultimately synthesizing a 2000W level signal. That is, the Ka high-power combining network utilizes spatial combining and Magic-T microwave performance for three-stage binary combining. The network is designed with a symmetrical structure, ensuring good phase and amplitude consistency across channels, effectively improving power combining efficiency. Specifically, the Ka high-power combining network uses a symmetrical three-stage waveguide Magic-T combining structure to combine eight 500W power signals in pairs, ultimately synthesizing a 2000W level signal. The symmetrical form ensures phase and amplitude consistency for each channel, and the low insertion loss of the waveguide Magic-T structure effectively improves the overall power amplifier combining efficiency.

[0028] In this embodiment, specifically, the output power, reflected power, operating current, and other parameter information of the eight Ka final stage power amplifiers are reported to the Ka monitoring and preamplifier via CAN bus communication to complete the monitoring and control of their parameters. At the same time, the forward and reverse power output of the Ka band 2000W power amplifier is detected and corresponding power control is performed.

[0029] In this embodiment, it should be noted that Ka monitoring and preamplifier are the driver stage power amplifier and the main monitoring stage of this power amplifier. Among them, as the driver stage, it provides a signal gain of about 50dB and a large dynamic high-precision attenuation control of 40dB, realizing a large dynamic power output of 1W-2000W. At the same time, a linearizer is designed for the characteristics of GaN power chips to improve the nonlinearity of the power amplifier. As a system monitoring level, it communicates with eight Ka final stage power amplifiers via CAN bus or serial port to detect and control their output power, reflected power, current, voltage, and other parameters, as well as the RF switch, ALC control, current, and voltage parameters of this plug-in box. On the other hand, it communicates with the host computer via network port or serial port to monitor all parameters.

[0030] In this embodiment, for details, please refer to... Figure 2 The Ka monitoring and front-end include: Predistortion module, 20W power module, detection unit, monitoring and processing unit and power supply unit; The predistortion module has independently adjustable amplitude and phase compensation links to improve the early and slow amplitude compression nonlinear characteristics of GaN power chips, ensuring that the overall third-order intermodulation performance meets linearity requirements. It should be noted that the predistortion module is a multi-functional module that performs 40dB attenuation control on small signal levels to achieve large dynamic power control. It utilizes multi-stage amplification to provide the required link gain for the system. Although GaN power chips have become the development direction of millimeter-wave solid-state power amplifier technology due to their high power density, high efficiency, wide bandwidth, and high temperature tolerance, their early and slow amplitude compression characteristics still result in poor linearity. Predistortion linearization technology is needed to improve linearity indicators such as third-order intermodulation. To address this challenge, this design employs a linearizer that allows independent adjustment of the amplitude and phase compensation of the link, ensuring good linearity of the power amplifier. The 20W power module is located after the predistortion module and is used to amplify the small signal to a medium power level to meet the input requirements of the Ka final stage power amplifier; that is, the 20W power module achieves medium power amplification on the basis of the small signal power amplification of the predistortion module to meet the input requirements of the Ka final stage power amplifier. The detection unit is used for real-time detection of the forward and reverse power after synthesis by the Ka high-power combining network; The monitoring and processing unit completes the monitoring and reporting of the parameters of this socket and the final stage power amplifier.

[0031] In this embodiment, for details, please refer to... Figure 3 The Ka final stage power amplifier is the final stage amplification unit of this power amplifier. It adopts a solid-state system and uses domestically produced GaN power chips for multi-stage power synthesis. The single-unit output power is not less than 500W.

[0032] In this embodiment, specifically, the Ka-band final stage power amplifier is a 500W solid-state power amplifier in the Ka band, comprising: Drive unit, final stage unit, monitoring and processing unit, and power supply unit; The driving unit is initially synthesized using four 10W-level GaN power chips; The final stage unit is synthesized using 96 GaN power chips with a power rating of 10W each; The monitoring and processing unit collects the forward / reverse power, current, voltage, and temperature parameters of the machine in real time, and reports them to the Ka monitoring and front-end via the CAN bus. It completes over-temperature, over-reflection, and over-current protection, as well as power on / off and ALC command execution, realizing module-level in-situ hot-swappable maintenance.

[0033] In this embodiment, specifically, the synthesis method of the final-level unit is as follows: Two 10W-level GaN power chips are combined to form the most basic power module. Eight such power modules are then combined into a standardized power component. Based on this, six power components are then combined to achieve a power output in the 500W range. It should be noted that the power combining uses high-density and high-efficiency combining technology, which not only achieves high combining efficiency within the operating bandwidth to meet the high power requirements of the power amplifier, but also significantly increases the combining density and reduces the overall size and weight of the equipment. A single 500W power amplifier is designed in a standard 3U-4U socket size, which can meet the requirements of miniaturization of a single unit.

[0034] In this embodiment, it should be noted that, based on strictly controlling the amplitude and phase consistency of each final stage power, an amplitude and phase adjuster is reserved inside the Ka final stage power amplifier, which can be used for amplitude and phase adjustment of single-channel signals when necessary, especially phase adjustment, to further improve the synthesis efficiency.

[0035] Meanwhile, a high heat flux density heat dissipation design can be completed to meet the heat dissipation requirements of the power amplifier. A solution combining heat pipe vapor chamber with phase change thermal pad and traditional forced convection air cooling is adopted. This heat dissipation solution combines the advantages of air cooling and liquid cooling to a certain extent, which not only meets the heat dissipation needs of the equipment, but also reduces the complexity of the system and improves the reliability and engineering applicability of the equipment.

[0036] In this embodiment, for details, please refer to... Figure 4 The Ka high-power combining network efficiently combines eight 500W-level power signals. It adopts a spatially symmetrical three-stage waveguide magic T combining method. As can be seen from the microwave characteristics of the waveguide magic T, two power amplifiers are connected to the two arms respectively, and the two signals are combined in phase at the H-arm. The combining network design is simple. Due to its symmetry, the amplitude and phase of each channel are relatively consistent, which is easy to implement in engineering. Moreover, the waveguide structure has good power tolerance and is suitable for high-power combining applications. At the same time, dual directional couplers are configured for forward and reverse power coupling of the combined power for detection purposes.

[0037] The embodiments described above merely illustrate specific implementation methods of this application, and while the descriptions are detailed and specific, they should not be construed as limiting the scope of protection of this application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of the technical solution of this application, and these modifications and improvements all fall within the scope of protection of this application.

[0038] This background section is provided to generally present the context of the invention. The work of the currently named inventors, the work to the extent described in this background section, and aspects of this section that did not constitute prior art at the time of application are neither expressly nor impliedly acknowledged as prior art to the invention.

Claims

1. A Ka-band 2000W solid-state power amplifier, characterized in that, include: Ka monitoring and preamplifier, Ka final stage power amplifier and Ka high power synthesis network; The Ka monitoring and preamp output terminals are softly connected to eight Ka final stage power amplifiers, and the Ka final stage power amplifiers are hard-connected to the Ka high-power combining network using waveguides.

2. The Ka-band 2000W solid-state power amplifier according to claim 1, characterized in that, The Ka monitor and preamplifier are used to preamplify the small excitation signal to the required driving power and provide sufficient gain, and then output eight equal-amplitude and in-phase RF signals through a 1-to-8 splitter.

3. A Ka-band 2000W solid-state power amplifier according to claim 2, characterized in that, Each Ka final stage power amplifier is connected to the Ka monitor and preamplifier via an ultra-stable phase cable, and is used to amplify the corresponding RF signal to the 500W level.

4. A Ka-band 2000W solid-state power amplifier according to claim 3, characterized in that, The Ka high-power combining network is hard-connected to eight Ka final-stage power amplifiers via waveguides. It adopts a symmetrical three-stage waveguide magic-T space combining structure to combine eight ≥500W signals in pairs, ultimately combining them into a 2000W level.

5. A Ka-band 2000W solid-state power amplifier according to claim 4, characterized in that, The parameter information of the eight Ka final stage power amplifiers is reported to the Ka monitor and preamplifier via CAN bus communication to monitor and control their parameters. At the same time, the forward and reverse power output of the Ka band 2000W power amplifier is detected and corresponding power control is performed.

6. A Ka-band 2000W solid-state power amplifier according to claim 5, characterized in that, The parameter information includes: output power, reflected power, and operating current.

7. A Ka-band 2000W solid-state power amplifier according to claim 6, characterized in that, The Ka monitoring and front-end include: Predistortion module, 20W power module, detection unit, monitoring and processing unit and power supply unit; The predistortion module has independently adjustable amplitude compensation and phase compensation links, which are used to improve the amplitude early compression and slow compression nonlinearity characteristics of GaN power chips, so that the third-order intermodulation index of the whole machine meets the linearity requirements. The 20W power module is located after the predistortion module and is used to amplify small signals to a medium power level to meet the input requirements of the Ka final stage power amplifier. The detection unit is used for real-time detection of the forward and reverse power after synthesis by the Ka high-power combining network; The monitoring and processing unit completes the monitoring and reporting of the parameters of this socket and the final stage power amplifier.

8. A Ka-band 2000W solid-state power amplifier according to claim 7, characterized in that, The Ka-band final stage power amplifier is a 500W solid-state power amplifier in the Ka band, including: Drive unit, final stage unit, monitoring and processing unit, and power supply unit; The driving unit is initially synthesized using four 10W-level GaN power chips; The final stage unit is synthesized using 96 GaN power chips with a power rating of 10W each; The monitoring and processing unit collects the forward / reverse power, current, voltage, and temperature parameters of the machine in real time, and reports them to the Ka monitoring and front-end via the CAN bus. It completes over-temperature, over-reflection, and over-current protection, as well as power on / off and ALC command execution, realizing module-level in-situ hot-swappable maintenance.

9. A Ka-band 2000W solid-state power amplifier according to claim 8, characterized in that, The synthesis method of the final-level unit is as follows: Two 10W-level GaN power chips are combined to form the most basic power module. Eight such power modules are then combined into a standardized power component. Based on this, six power components are then combined to achieve a power output of 500W.

10. A Ka-band 2000W solid-state power amplifier according to claim 9, characterized in that, The Ka final stage power amplifier has a reserved amplitude and phase adjuster inside, which can be used for amplitude and phase adjustment of a single signal when necessary.

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