Method and device for monitoring etching liquid medicine

Abstract

The invention discloses an etching liquid medicine monitoring method and device, and relates to the technical field of etching liquid medicine monitoring, and the method comprises the steps: S1, collecting the concentration, temperature, pH value and conductivity parameters of an etching liquid medicine; s2, collecting temperature, humidity and illumination parameters of an etching environment; according to the method, multiple parameters including the concentration, the temperature, the pH value and the conductivity of the etching liquid medicine are collected at the same time, the correlation model is established for analysis, the problem that traditional monitoring parameters are single is solved, the state of the etching liquid medicine is comprehensively judged, etching abnormity caused by the comprehensive effect of the multiple parameters is found in time, monitoring accuracy and reliability are improved, and the monitoring cost is reduced. The quality of an etching product is guaranteed, the problem that a traditional method is poor in environmental adaptability is solved by collecting environmental parameters in real time and automatically adjusting a monitoring strategy, adaptation of the monitoring method and environmental conditions is achieved, interference of environmental factors on a monitoring result and an etching process is reduced, monitoring stability is improved, and the monitoring efficiency is improved. And the etching process is ensured to be stably carried out under wide environmental conditions.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of etching liquor monitoring, in particular to an etching liquor monitoring method and device. BACKGROUND

[0002] Etching liquor is a chemical solution used in etching processes to selectively corrode substrates such as metals and semiconductors, forming specific patterns or structures. Its composition varies depending on the etching substrate, for example, in metal etching, common etching liquor may contain acidic substances, oxidizing substances, etc., which together act through chemical corrosion reactions to remove unwanted parts of the substrate surface; in semiconductor etching processes, etching liquor may also contain specific complexing agents, inhibitors, etc., to precisely control etching rate and etching accuracy, meeting the manufacturing needs of microelectronic device microstructures. The performance of etching liquor directly determines the pattern accuracy, surface flatness and structural integrity of the etched substrate, and is a crucial core material in etching processes.

[0003] Monitoring etching liquor is a key link to ensure stable operation of etching processes and product quality. In continuous etching production processes, etching liquor will change in composition concentration and physical and chemical properties due to chemical reactions with the substrate, water evaporation, and impurity introduction; at the same time, environmental factors also affect the performance of etching liquor, if these changes are not timely mastered and adjusted, a series of problems will be caused, by effectively monitoring etching liquor, its state changes can be mastered in real time, and timely adjustment measures can be taken to ensure that the etching process is always in a stable state, reduce the rate of defective products, reduce production costs, at the same time, ensure the continuity of the production process, and improve production efficiency.

[0004] At present, the monitoring technology for etching liquor still has some defects, the existing technology mainly monitors the concentration of etching liquor, ignoring the influence of temperature, pH, conductivity, etc. on etching reaction, in actual etching process, even if the concentration is within the normal range, if the temperature is too high or too low, the etching reaction rate will be accelerated or slowed down; abnormal pH may change the mechanism of etching reaction, leading to poor etching effect, and single parameter monitoring cannot timely discover etching abnormalities caused by multiple parameter comprehensive action, thus affecting product quality, the existing technology does not consider the influence of environmental factors on etching liquor performance and monitoring results, when the environmental temperature changes, the temperature of etching liquor may fluctuate, thus affecting the accuracy of concentration detection, abnormal environmental humidity may cause etching liquor to absorb water or evaporate, changing its composition ratio, and the existing technology cannot adjust the monitoring strategy and parameters according to environmental changes, resulting in reduced stability and reliability of monitoring results under different environmental conditions, it is difficult to ensure the stable operation of etching process in diversified environment, therefore, it is of great significance to develop an etching liquor monitoring method and device. Summary of the Invention

[0005] The purpose of this invention is to overcome the shortcomings of existing technologies and provide an etching solution monitoring method and device. This method can comprehensively judge the state of the etching solution by simultaneously collecting multiple parameters such as the concentration, temperature, pH, and conductivity of the etching solution and establishing a correlation model for analysis. It can promptly detect etching anomalies caused by the combined effect of multiple parameters, improve the accuracy and reliability of monitoring, and ensure the quality of etched products. By collecting environmental parameters in real time and automatically adjusting the monitoring strategy, the monitoring method can be adapted to environmental conditions, reducing the interference of environmental factors on monitoring results and etching processes, improving monitoring stability, and ensuring that the etching process can be carried out stably under a wide range of environmental conditions.

[0006] To solve the above-mentioned technical problems, the present invention provides the following technical solution: a method for monitoring etching solutions, the method comprising the following steps: S1. Collect parameters such as concentration, temperature, pH, and conductivity of the etching solution; S2. Collect temperature, humidity, and light parameters of the etching environment; S3. Establish a multi-parameter correlation model based on historical etching process data. Input the collected multi-parameter data of etching solution into the model, analyze the correlation between each parameter and its correspondence with the etching effect, and determine the state of the etching solution. S4. Based on the collected environmental parameters and the preset environmental parameter and monitoring strategy adjustment rules, determine whether the environmental parameters affect the detection of etching solution parameters and the etching reaction. If they exceed the normal range, adjust the detection threshold of multi-parameter collection and the analysis coefficient of the multi-parameter correlation model. S5. Output the etching solution status judgment result and the adjusted monitoring strategy parameters. If the status is abnormal, generate adjustment prompt information and feed it back to the etching process control terminal.

[0007] Further, in step S1, a concentration sensor, a temperature sensor, a pH sensor, and a conductivity sensor are used to collect the concentration, temperature, pH, and conductivity parameters of the etching solution, respectively. Before data collection, each sensor is calibrated. After calibration, the detection ends of each sensor are immersed in the etching solution, maintaining a consistent immersion depth. All sensors are simultaneously activated for data collection. The collection frequency is set according to the production rhythm of the etching process, and the duration of each collection is set. After collection is completed, the effective collected values ​​of each parameter are calculated using the following formula: ,in, For the valid collected values ​​of the parameters, For the first The weight of the data collected each time For the first The raw data of the parameters collected this time. The number of data collections within the duration of a single data collection session. Through the correlation analysis of historical collection data and etching effect, data collected in time periods with smaller deviation from etching effect is assigned a higher weight. Specifically, at least 20 batches of historical collection data are selected, the deviation rate of collection data in each time period from the standard parameter of corresponding etching effect is calculated, the lower the deviation rate, the higher the value, and the sum of all values is 1.

[0008] Further, in the step S3, the historical etching process data covers multiple batches of etching production processes, each batch of data includes the concentration, temperature, pH value and conductivity parameters of etching drug water before, during and after etching, the etching effect data of the corresponding period and the contemporaneous environmental temperature, humidity and illumination data. When establishing a multi-parameter correlation model, the historical data is first de-duplicated and abnormal data beyond the reasonable range is removed, and then the correlation degree of the multi-parameters of etching drug water and etching effect is calculated by model calculation, and the calculation formula is: wherein, is the comprehensive correlation degree of the multi-parameters of etching drug water and etching effect, is the etching effect data in the i-th group of historical data, is the average value of all historical etching effect data, is the i-th etching drug water parameter in the i-th group of historical data, is the corresponding concentration, is the corresponding temperature, is the corresponding pH value, is the corresponding conductivity, is the historical average value of the i-th etching drug water parameter, is the correlation coefficient of the i-th etching drug water parameter, is the number of historical data groups, The correlation degree is determined by the control variable method experiment, that is, the other three parameters are fixed, the i-th parameter is changed, and the change amplitude of etching effect is recorded. The larger the change amplitude, the higher the value, and the sum of all values is 1. After the correlation degree calculation is completed, the mapping relationship between each parameter and etching effect is constructed based on the correlation degree result, the model training is completed, and the verified model is stored in the data processing unit.

[0009] ​​​​​​​​​​Further, in the step S4, the preset environmental parameters and the monitoring strategy adjustment rules are formulated through experiments, the rules divide the normal range and the abnormal interval of the environmental temperature, humidity and illumination, each abnormal interval corresponds to set adjustment amplitude of the multi-parameter acquisition detection threshold and the correction value of the multi-parameter correlation model analysis coefficient, when judging whether the environmental parameters exceed the normal range, the real-time collected environmental temperature, humidity and illumination data are compared with the corresponding normal range respectively, if any parameter exceeds the normal range, the adjustment amplitude and the correction value of the corresponding abnormal interval are called to adjust the multi-parameter acquisition detection threshold, the threshold adjustment calculation formula is: wherein, is the adjusted first etching chemical parameter detection threshold, is the first etching chemical parameter detection threshold before adjustment, is the real-time environmental temperature, is the middle value of the environmental temperature normal range, is the real-time environmental humidity, is the middle value of the environmental humidity normal range, is the real-time environmental illumination intensity, is the middle value of the environmental illumination intensity normal range, , , respectively are the influence coefficients of the environmental temperature, humidity and illumination on the detection threshold, , , are determined through multiple environmental simulation experiments, that is, the parameters of the same batch of etching chemicals are detected under different temperature, humidity and illumination conditions, the actual deviation proportion of the detection threshold when the environmental parameters deviate from the middle value of the normal range is calculated, and the ratio of the proportion to the environmental parameter deviation proportion is the corresponding influence coefficient.

[0010] Further, in the step S5, when outputting the etching chemical state judgment result, the real-time values, normal ranges and state judgment results of each parameter are output in a structured data form, when generating the adjustment prompt information, the abnormal parameter name, the current value and the deviation value of the normal range, and the recommended adjustment direction are labeled, the judgment result, the adjustment prompt information and the adjusted monitoring strategy parameters are synchronously transmitted to the storage module and stored in chronological order.

[0011] Further, in the step S2, the ambient temperature sensor, the ambient humidity sensor and the light sensor are respectively installed at the air inlet of the etching device, above the etching chemical storage tank and in the center of the etching working area. Each sensor is calibrated to zero before data collection, and the data collection frequency is consistent with the etching chemical parameter collection frequency in the step S1. During the data collection process, the working state of the sensor is monitored in real time. If a sensor failure occurs, a fault prompt information is generated and sent to the operator terminal, and a standby sensor is enabled to continue collecting environmental parameters.

[0012] Further, in the step S3, when analyzing the correlation between parameters and the corresponding relationship with the etching effect, the real-time collected multi-parameter data of the etching chemical is first converted into standardized data, and then the correlation coefficients of concentration and temperature, and pH and conductivity are calculated through the multi-parameter correlation model. The real-time parameter combination is compared with the parameter combination in the historical data that meets the etching effect standard in terms of similarity. If the similarity is lower than the preset threshold, it is determined that the state of the etching chemical is abnormal. If the similarity is higher than or equal to the preset threshold, it is determined that the state of the etching chemical is normal.

[0013] An etching chemical monitoring device suitable for the etching chemical monitoring method described above, which comprises a multi-parameter collection module, an environmental parameter collection module, a data processing module, a monitoring adjustment module and a storage module, and each module is connected through a data transmission line; The multi-parameter collection module comprises a concentration sensor, a temperature sensor, a pH sensor and a conductivity sensor, which are used to collect the concentration, temperature, pH and conductivity parameters of the etching chemical and transmit them to the data processing module; The environmental parameter collection module comprises an ambient temperature sensor, an ambient humidity sensor and a light sensor, which are used to collect the temperature, humidity and light parameters of the etching environment and transmit them to the data processing module; The data processing module comprises a data receiving unit and a model storage and running unit. The data receiving unit receives the parameter data transmitted by each module, and the model storage and running unit stores the multi-parameter correlation model and analyzes the etching chemical parameter data to determine the state; The monitoring adjustment module stores the environmental parameters and the monitoring strategy adjustment rules, generates adjustment instructions according to the environmental parameters and sends them to the multi-parameter collection module and the data processing module; The storage module is used to store parameter data, determination results and adjustment instructions.

[0014] Further, the detection end surface of each sensor in the multi-parameter acquisition module is coated with a polytetrafluoroethylene corrosion-resistant coating, and each sensor of the environmental parameter acquisition module is sleeved with a dustproof and waterproof shell, the shell is made of ABS material, a ventilation hole is formed in the side surface of the shell, and a dust screen is arranged in the ventilation hole, the storage module adopts an SD card expansion storage chip, has a timing automatic backup function, and stores data to a cloud server according to a set time period.

[0015] Compared with the prior art, the etching liquid monitoring method and device have the following beneficial effects: The present application solves the problem of single monitoring parameter in the prior art by simultaneously collecting the concentration, temperature, pH and conductivity of the etching liquid and establishing a correlation model for analysis, realizes comprehensive judgment of the etching liquid state, discovers etching abnormalities caused by the comprehensive action of multiple parameters in time, improves monitoring accuracy and reliability, guarantees etching product quality, solves the problem of poor environmental adaptability of the prior art by collecting environmental parameters in real time and automatically adjusting the monitoring strategy, realizes the adaptation of the monitoring method to environmental conditions, reduces the interference of environmental factors on the monitoring result and the etching process, improves monitoring stability, and ensures stable etching process under a wide range of environmental conditions.

[0016] Other advantages, objects, and features of the present application will be apparent to those skilled in the art from the following specification, and it is intended to be covered by the following claims, based on the examination of the following specification, or can be taught from the practice of the present application. BRIEF DESCRIPTION OF DRAWINGS

[0017] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the drawings needed to be used in the embodiments or prior art description. Obviously, the drawings in the following description are only some embodiments of the present application, and those skilled in the art can also obtain other drawings according to these drawings without creating any creative labor.

[0018] Figure 1 A flowchart of an etching liquid monitoring method; Figure 2 A flowchart of an etching liquid monitoring method; Figure 3 A structural schematic diagram of an etching liquid monitoring device. DETAILED DESCRIPTION

[0019] In order to further illustrate the technical means and effects adopted by the present application to achieve the predetermined application purpose, the following will describe the specific embodiments, structures, features and effects of the present application in detail with reference to the drawings and preferred embodiments.

[0020] This invention provides a method and apparatus for monitoring etching solutions, which constitutes a complete technical solution. (See attached document.) Figure 1 , Figure 2 and Figure 3 The core content is as follows: The etching solution monitoring method includes: collecting parameters such as concentration, temperature, pH, and conductivity of the etching solution, using corresponding sensors, calibrating the sensors before data acquisition, ensuring consistent immersion depth of the detection end and synchronous data acquisition, and calculating effective data acquisition values; collecting parameters such as temperature, humidity, and light intensity of the etching environment, with sensors located at specific positions, zero-point calibration before data acquisition, and frequency consistent with the etching solution parameter acquisition, and activating backup sensors in case of failure; establishing a multi-parameter correlation model based on multiple batches of historical process data, first processing historical data, calculating the correlation between multiple etching solution parameters and etching effect, constructing mapping relationships and validating the model, and inputting real-time etching solution parameters to determine the status; comparing real-time environmental parameters with the normal range according to preset rules, and adjusting the etching solution parameter detection threshold and model analysis coefficients if the parameters exceed the range; outputting the etching solution status results and adjusted monitoring parameters in a structured manner, and generating prompts containing abnormal parameters, deviation values, and suggested adjustment directions when abnormalities occur, feeding back to the control terminal and storing relevant data.

[0021] The etching solution monitoring method comprises five modules, all connected via data transmission lines: a multi-parameter acquisition module collects etching solution parameters using corresponding sensors; an environmental parameter acquisition module collects environmental parameters using specific sensors; a data processing module includes a data receiving unit and a model storage and operation unit, which respectively receive data, store models, and analyze the etching solution status; a monitoring and adjustment module stores rules and generates adjustment instructions; and a storage module stores relevant data. The multi-parameter acquisition module's sensor detection ends are coated with an anti-corrosion coating, the environmental parameter acquisition module's sensors are encased in a dustproof and waterproof shell, and the storage module supports scheduled backups to the cloud. Example 1

[0022] This embodiment applies to the metal layer etching process in semiconductor chip manufacturing. This process requires the use of an etching solution containing specific acidic substances and complexing agents to selectively etch the metal layer on the chip surface to form circuit patterns. Because semiconductor chip circuits require extremely high precision, even slight changes in the concentration, temperature, pH, and conductivity of the etching solution, or fluctuations in the etching environment's temperature, humidity, and light intensity, can lead to over-etching, under-etching, or irregular pattern edges, thus affecting chip performance or even causing it to be scrapped. Therefore, see... Figure 1 , Figure 2 and Figure 3 The etching solution monitoring method and device of the present invention are required to achieve precise monitoring of the etching solution status and environmental adaptation adjustment, so as to ensure the stable operation of the semiconductor chip metal layer etching process and the qualification of product quality.

[0023] In the embodiment, first, the etching liquor monitoring device is started, and parameter collection preparation work is carried out. For etching liquor parameter collection, the concentration sensor, the temperature sensor, the pH sensor and the conductivity sensor in the multi-parameter collection module need to be calibrated first. The calibration process refers to the standard process of sensor factory, and the detection accuracy of each sensor is ensured to meet the process requirements. After calibration, the detection end of each sensor is inserted into the liquor in the etching liquor storage tank at the same time, the position of each sensor is adjusted, the immersion depth of all detection ends is kept consistent, and the detection data deviation caused by the difference in immersion depth is avoided. According to the production rhythm of the semiconductor chip metal layer etching process, the collection frequency of each sensor is set, and the duration of each collection is determined.

[0024] After the collection is started, each sensor synchronously collects data at the set frequency, and completes multiple data collection in a single collection duration. After the collection is completed, the effective collection value of each parameter is calculated according to the formula, which is: wherein, is the effective collection value of the parameter, is the weight of the th collection data, which is determined by the correlation analysis of historical collection data and etching effect. Higher weight is allocated to the data of the collection period with smaller deviation from the etching effect, and the sum of all is 1; is the original data of the parameter collected in the th collection; is the collection number in a single collection duration.

[0025] At the same time, the environmental parameter collection module starts environmental parameter collection. The environmental temperature sensor is installed at the air inlet of the etching equipment, the environmental humidity sensor is installed above the etching liquor storage tank, and the light sensor is installed in the central area of the etching working area. Before collection, each environmental sensor is zero-point calibrated to ensure accurate detection reference, and the environmental parameter collection frequency is set to be consistent with the etching liquor parameter collection frequency. During the collection process, the device monitors the working state of each environmental sensor in real time. If a sensor fails, a fault prompt message is generated and sent to the operator terminal, and a standby sensor is automatically enabled to ensure uninterrupted environmental parameter collection and continuous acquisition of temperature, humidity and light data of the etching environment.

[0026] After parameter acquisition, the data processing module receives multi-parameter data of the etching solution and environmental parameters. The model storage and execution unit calls a pre-built multi-parameter correlation model based on historical etching process data. This historical data covers multiple batches of semiconductor chip metal layer etching production processes. Each batch of data includes etching solution concentration, temperature, pH, and conductivity parameters before, during, and after etching, as well as etching effect data for the corresponding time period and ambient temperature, humidity, and illumination data during the same period. When building the model, the historical data has been deduplicated, and abnormal data exceeding reasonable ranges has been removed.

[0027] Subsequently, the correlation between multiple parameters of the etching solution and the etching effect was calculated using the following formula: ,in, To determine the comprehensive correlation between multiple parameters of the etching solution and the etching effect, For the first Etching effect data from a set of historical data. This is the average of all historical etching effect data. For the first The first set of historical data Parameters of the etching solution, Corresponding concentration Corresponding temperature Corresponding pH level Corresponding conductivity, For the first Historical average values ​​of etching solution parameters For the first The correlation coefficients of the etching solution parameters were determined experimentally using the controlled variable method, and all The sum is 1. This represents the number of historical data sets. Based on the correlation results, a mapping relationship between each parameter and the etching effect is constructed, and after successful model verification, it is stored in the model storage and execution unit.

[0028] After converting the real-time collected multi-parameter data of the etching solution into standardized data, it is input into a multi-parameter correlation model to calculate the correlation coefficients between concentration and temperature, and between pH and conductivity. The real-time parameter combinations are then compared with the parameter combinations in historical data that achieved the required etching effect to determine the state of the etching solution. If the similarity is higher than or equal to a preset threshold, the etching solution is considered to be in a normal state; if the similarity is lower than the preset threshold, the etching solution is considered to be in an abnormal state.

[0029] Subsequently, the monitoring adjustment module calls the preset environmental parameters and the monitoring strategy adjustment rules, which are formulated through multiple sets of environmental simulation experiments, dividing the normal range and the abnormal interval of the environmental temperature, humidity, and illumination, and each abnormal interval corresponds to the adjustment range of the multiple parameter acquisition detection threshold and the correction value of the multiple parameter correlation model analysis coefficient. The real-time collected environmental temperature, humidity, and illumination data are compared with the corresponding normal range respectively, if any parameter exceeds the normal range, the adjustment range and the correction value of the corresponding abnormal interval are called, and the detection threshold of the multiple parameter acquisition is adjusted through the formula, the formula is: wherein, is the adjusted detection threshold of the i-th etching chemical parameter, is the detection threshold of the i-th etching chemical parameter before adjustment, is the real-time environmental temperature, is the middle value of the normal range of the environmental temperature, is the real-time environmental humidity, is the middle value of the normal range of the environmental humidity is the real-time environmental illumination intensity, is the middle value of the normal range of the environmental illumination intensity, , , are the influence coefficients of the environmental temperature, humidity, and illumination on the detection threshold respectively, which are determined through multiple sets of environmental simulation experiments. At the same time, the analysis coefficient of the multiple parameter correlation model is adjusted according to the correction value, to ensure that the model analysis result is adapted to the current environmental condition. Finally, the data processing module outputs the etching chemical state judgment result and the adjusted monitoring strategy parameters, and outputs the real-time values of each parameter, the normal range, and the state judgment result in the form of structured data, for intuitive viewing by the operator. If the etching chemical state is abnormal, an adjustment prompt information is generated, marking the abnormal parameter name, the current value, the deviation value from the normal range, and the recommended adjustment direction, and the adjustment prompt information is fed back to the etching process control end to guide the operator to adjust the etching chemical. At the same time, the judgment result, the adjustment prompt information, and the adjusted monitoring strategy parameters are transmitted to the storage module simultaneously, the storage module uses an SD card expansion storage chip to store the data in chronological order, and automatically backs up the stored data to the cloud server at a set time interval, for subsequent process tracing and data analysis.

[0030] Finally, the data processing module outputs the etching chemical state judgment result and the adjusted monitoring strategy parameters, and outputs the real-time values of each parameter, the normal range, and the state judgment result in the form of structured data, for intuitive viewing by the operator. If the etching chemical state is abnormal, an adjustment prompt information is generated, marking the abnormal parameter name, the current value, the deviation value from the normal range, and the recommended adjustment direction, and the adjustment prompt information is fed back to the etching process control end to guide the operator to adjust the etching chemical. At the same time, the judgment result, the adjustment prompt information, and the adjusted monitoring strategy parameters are transmitted to the storage module simultaneously, the storage module uses an SD card expansion storage chip to store the data in chronological order, and automatically backs up the stored data to the cloud server at a set time interval, for subsequent process tracing and data analysis.

[0031] ​In summary, through the complete etching liquor monitoring process described above, the embodiment realizes the synchronous collection and correlation analysis of multiple parameters of etching liquor in the etching process of the metal layer of the semiconductor chip, solves the defects of traditional monitoring which only focuses on a single parameter, can timely discover etching abnormalities caused by the comprehensive action of multiple parameters, improves the monitoring accuracy and reliability, effectively reduces the chip scrap situation caused by abnormal etching liquor parameters. At the same time, by collecting environmental parameters in real time and automatically adjusting the monitoring strategy, the adaptation of the monitoring method to the environmental conditions is realized, the interference of environmental factors on the monitoring results and the etching process is reduced, the stable progress of the etching process under different environmental conditions is ensured, and the production quality and production efficiency of the semiconductor chip are further improved, which provides strong support for the stable operation of the semiconductor chip manufacturing process. Embodiment two

[0032] The embodiment is applied to the copper foil etching process in printed circuit board manufacturing. The process needs to use acidic etching liquor to selectively corrode the copper foil on the surface of the printed circuit board to form circuit traces. The circuit trace width, pitch and copper foil residual amount of the printed circuit board directly affect the circuit signal transmission performance, while the concentration, temperature, pH value and conductivity changes of the etching liquor, as well as the fluctuations of the environmental temperature, humidity and illumination in the etching workshop, may all cause abnormal copper foil etching rate, trace edge burr or incomplete etching, and thus cause circuit board short circuit or open circuit failure. Therefore, referring to Figure 1 , Figure 2 and Figure 3 , the etching liquor monitoring method and device of the embodiment are needed to realize real-time control and environmental adaptability adjustment of the etching liquor state, and to ensure the stability and product qualification rate of the printed circuit board copper foil etching process.

[0033] In the embodiment, first, the deployment and initialization of the etching liquor monitoring device are completed. For the etching liquor parameter collection link, the concentration sensor, temperature sensor, pH sensor and conductivity sensor in the multi-parameter collection module need to be calibrated in advance. The calibration operation strictly follows the sensor calibration specification, and the sensor detection accuracy is verified through standard solution and standard environment to ensure data collection accuracy. After calibration, the detection ends of the sensors are simultaneously inserted into the etching liquor in the etching tank, the sensor position is fixed through the support, the immersion depth of all detection ends is ensured to be the same, and data deviation caused by the difference in the contact area of the detection ends with the etching liquor is avoided. According to the production rhythm of the printed circuit board copper foil etching process, the collection frequency of each sensor is set, and the duration of a single collection is determined to ensure that the collected data can reflect the dynamic changes of the etching liquor state.

[0034] After the collection is started, each sensor synchronously collects data at the set frequency, and completes multiple data collection within the duration of a single collection. After the collection is completed, the effective collection value of each parameter is calculated according to the formula: wherein, For the valid collected values ​​of the parameters, For the first The weight of each data acquisition is determined by analyzing the correlation between historical data acquisition and the quality of the etched copper foil. Data from acquisition periods with smaller deviations from the copper foil etching effect are assigned higher weights, and all... The sum is 1; For the first The raw data of the parameters collected this time; This refers to the number of data collections within the duration of a single data collection session.

[0035] Simultaneously with the acquisition of etching solution parameters, the environmental parameter acquisition module initiates environmental data collection. An ambient temperature sensor is installed at the outlet of the air inlet duct in the etching workshop, an ambient humidity sensor is installed 1 meter above the etching tank, and a light sensor is installed at the top center of the etching work area to ensure that each sensor accurately captures key parameters of the etching environment. Before data acquisition, each environmental sensor undergoes zero-point calibration to eliminate sensor drift errors, and the environmental parameter acquisition frequency is set to be consistent with the etching solution parameter acquisition frequency, achieving synchronous correspondence between the solution and environmental parameters. During the acquisition process, the device monitors the working status of each environmental sensor in real time. If a sensor experiences data interruption or abnormal fluctuation, a fault warning message is immediately generated and sent to the terminal device of the workshop operator. Simultaneously, the device automatically switches to a backup sensor to continue acquisition, ensuring the continuity of environmental parameter acquisition and preventing monitoring interruptions due to sensor failure.

[0036] After parameter acquisition is complete, the data receiving unit of the data processing module receives multi-parameter data of the etching solution and environmental parameters, and transmits them to the model storage and execution unit. This unit pre-stores a multi-parameter correlation model based on historical data from multiple batches of printed circuit board copper foil etching processes. This historical data covers parameters such as solution concentration, temperature, pH, and conductivity before, during, and after each batch of etching, as well as copper foil etching effect data for the corresponding time period and ambient temperature, humidity, and light intensity data from the workshop during the same period. During model building, the historical data has been pre-processed to remove duplicate data and eliminate abnormal data that exceeds the reasonable range of the process.

[0037] Subsequently, the correlation between multiple parameters of the etching solution and the etching effect was calculated using the following formula: ,in, To determine the comprehensive correlation between multiple parameters of the etching solution and the etching effect, For the first Etching effect data from a set of historical data. This is the average of all historical etching effect data. For the first The first set of historical data Parameters of the etching solution, corresponding concentration, corresponding temperature, corresponding pH value, corresponding conductivity, is the historical average value of the first etching chemical parameter, is the correlation coefficient of the first etching chemical parameter, which is determined by the control variable method experiment, that is, fixing the other three parameters unchanged, changing the first parameter and recording the change range of the copper foil etching effect, the greater the change range, the higher the value, and the sum of all is 1, is the number of historical data groups. Based on the correlation degree result, the mapping relationship between each parameter and the etching effect is constructed, and after the model accuracy is verified by multiple batches of data, it is stored in the model storage and operation unit.

[0038] After the real-time collected multi-parameter data of the etching chemical is converted into standardized data, it is input into the multi-parameter correlation model, the correlation coefficients of concentration, temperature, pH value and conductivity are calculated, the mutual influence between each parameter is analyzed, and the real-time parameter combination is compared with the parameter combination in the historical data which meets the copper foil etching effect standard. If the similarity is higher than or equal to the preset threshold, it is determined that the etching chemical state is normal, and the current etching process can be continued; if the similarity is lower than the preset threshold, it is determined that the etching chemical state is abnormal, and adjustment prompts need to be generated subsequently.

[0039] Then, the monitoring and adjustment module calls the preset environmental parameter and monitoring strategy adjustment rule, which is formulated through multiple workshop environment simulation experiments, and divides the normal range and abnormal interval of environmental temperature, humidity and illumination. Each abnormal interval corresponds to the adjustment range of the multi-parameter acquisition detection threshold and the correction value of the multi-parameter correlation model analysis coefficient. The real-time collected environmental temperature, humidity and illumination data are compared with the corresponding normal range respectively, if any parameter exceeds the normal range, the adjustment range and correction value of the corresponding abnormal interval are called, and the multi-parameter acquisition detection threshold is adjusted through the formula, the formula is: , wherein, is the adjusted first etching chemical parameter detection threshold, is the first etching chemical parameter detection threshold before adjustment, is the real-time environmental temperature, is the middle value of the normal range of environmental temperature, is the real-time environmental humidity, is the middle value of the normal range of environmental humidity, is the real-time environmental illumination intensity, is the middle value of the normal range of environmental illumination intensity, , respectively, are the influence coefficients of the environment temperature, humidity and illumination on the detection threshold value. Meanwhile, the analysis coefficients of the multi-parameter correlation model are adjusted according to the correction values, so that the model analysis result can adapt to the current environment condition and the analysis error caused by the environment factor is avoided.

[0040] Finally, the data processing module outputs the etching chemical state judgment result and the adjusted monitoring strategy parameters. When outputting, the state judgment result of the real-time value of each parameter in the normal range is displayed on the workshop monitoring screen in the form of structured data, so that the operator can quickly master the chemical state. If the etching chemical state is abnormal, adjustment prompt information is generated, the deviation value of the abnormal parameter name and the current value from the normal range is marked, and the adjustment direction is suggested. The adjustment prompt information is fed back to the etching process control end to guide the operator to adjust the process parameters. At the same time, the judgment result adjustment prompt information and the adjusted monitoring strategy parameters are synchronously transmitted to the storage module. The storage module uses an SD card expansion storage chip to store data in time stamp order, and automatically backs up the stored data to the cloud server at a set time interval, so as to facilitate subsequent tracing of the etching process to analyze the cause of quality problems.

[0041] In summary, through the complete etching chemical monitoring process described above, the embodiment realizes the synchronous collection and deep correlation analysis of the multiple parameters of the etching chemical in the copper foil etching process of the printed circuit board, solves the problem that the traditional monitoring only focuses on a single parameter and cannot find the comprehensive abnormality of multiple parameters, can timely identify the deviation of the etching chemical state, effectively reduces the circuit board scrap caused by abnormal chemical parameters, and improves the product qualification rate. At the same time, by collecting the environmental parameters in real time and automatically adjusting the monitoring strategy, the interference of environmental fluctuations on the monitoring result and the etching process is avoided, so that the etching process can still be carried out stably when the workshop environment changes, further ensuring the production quality and production efficiency of the printed circuit board, and providing reliable support for the large-scale stable production of the printed circuit board manufacturing process.

[0042] The above is only a preferred embodiment of the present application, and does not limit the present application in any form. Although the present application has been disclosed as above with a preferred embodiment, it is not intended to limit the present application. Any person skilled in the art can make some changes or modifications to the above disclosed technical content without departing from the scope of the technical solution of the present application, and any equivalent embodiments with equivalent changes are equivalent to the above embodiments. Any modification, change, equivalent change and modification of the above embodiments based on the technical essence of the present application are still within the scope of the technical solution of the present application.

Claims

1. An etching bath monitoring method, characterized by, The method comprises the following steps: S1, collecting the concentration, temperature, pH, and conductivity parameters of the etching solution; S2, collecting the temperature, humidity, and illumination parameters of the etching environment; S3, establishing a multi-parameter correlation model based on historical etching process data, inputting the collected multi-parameter data of the etching solution into the model, analyzing the correlation between the parameters and the corresponding relationship with the etching effect, and judging the state of the etching solution; S4, judging whether the environmental parameters affect the detection of the etching solution parameters and the etching reaction according to the collected environmental parameters and the preset environmental parameter-monitoring strategy adjustment rules, adjusting the detection threshold of the multi-parameter collection and the analysis coefficient of the multi-parameter correlation model if the parameters are out of the normal range; S5, outputting the etching solution state judgment result and the adjusted monitoring strategy parameters, generating adjustment prompt information and feeding back to the etching process control end if the state is abnormal.

2. The method of claim 1, wherein the etching solution is a hydrofluoric acid solution. In step S1, a concentration sensor, a temperature sensor, a pH sensor, and a conductivity sensor are used to collect the concentration, temperature, pH, and conductivity parameters of the etching solution, respectively. Before data collection, each sensor is calibrated. After calibration, the sensor's detection end is immersed in the etching solution, ensuring a consistent immersion depth. All sensors are activated synchronously for data collection. The collection frequency is set according to the production rhythm of the etching process, and the duration of each collection session is set. After collection is complete, the effective collected values ​​for each parameter are calculated using the following formula: ,in, For the valid collected values ​​of the parameters, For the first The weight of the data collected each time For the first The raw data of the parameters collected this time. This refers to the number of data collections within the duration of a single data collection session.

3. The method of claim 1, wherein the etching solution is a hydrofluoric acid solution. In step S3, the historical etching process data covers multiple batches of etching production processes. Each batch of data includes etching solution concentration, temperature, pH, and conductivity parameters before, during, and after etching, as well as etching effect data for the corresponding time period and ambient temperature, humidity, and light data during the same period. When establishing a multi-parameter correlation model, the historical data is first deduplicated and abnormal data exceeding reasonable ranges are removed. Then, the correlation between the multiple parameters of the etching solution and the etching effect is calculated using the model. The calculation formula is as follows: ,in, To determine the comprehensive correlation between multiple parameters of the etching solution and the etching effect, For the first Etching effect data from a set of historical data. This is the average of all historical etching effect data. For the first The first set of historical data Parameters of the etching solution, For the first Historical average values ​​of etching solution parameters For the first The correlation coefficient of each etching solution parameter For the number of historical data sets, after completing the correlation calculation, a mapping relationship between each parameter and the etching effect is constructed based on the correlation results. After completing the model training, the model is validated, and the validated model is stored in the data processing unit.

4. The method of claim 1, wherein the etching solution is a hydrofluoric acid solution. In step S4, the preset environmental parameters and monitoring strategy adjustment rules are formulated through experiments. The rules define normal and abnormal ranges for ambient temperature, humidity, and light intensity. Each abnormal range corresponds to an adjustment range for the multi-parameter acquisition and detection threshold, as well as a correction value for the multi-parameter correlation model analysis coefficients. When determining whether an environmental parameter exceeds the normal range, the real-time collected ambient temperature, humidity, and light intensity data are compared with their corresponding normal ranges. If any parameter exceeds the normal range, the adjustment range and correction value for the corresponding abnormal range are retrieved, and the multi-parameter acquisition detection threshold is adjusted. The threshold adjustment calculation formula is as follows: ,in, For the adjusted number Detection thresholds for individual etching solution parameters For the first time before the adjustment Detection thresholds for individual etching solution parameters For real-time ambient temperature, This represents the midpoint of the normal range for ambient temperature. For real-time ambient humidity, This represents the midpoint of the normal range for ambient humidity. For real-time ambient light intensity, This represents the median value within the normal range of ambient light intensity. , , These are the influence coefficients of ambient temperature, humidity, and light intensity on the detection threshold, respectively.

5. The method of claim 1, wherein the etching solution is a hydrofluoric acid solution. In the step S5, when outputting the etching solution state judgment result, the real-time values, normal range, and state judgment result of each parameter are output in a structured data form. When generating the adjustment prompt information, the abnormal parameter name, the deviation value of the current value from the normal range, and the recommended adjustment direction are labeled. The judgment result, adjustment prompt information, and adjusted monitoring strategy parameters are simultaneously transmitted to the storage module and stored in chronological order.

6. The method of claim 1, wherein the etching solution is a hydrofluoric acid solution. In the step S2, the environmental temperature sensor, the environmental humidity sensor, and the illumination sensor are respectively installed at the air inlet of the etching equipment, above the etching solution storage tank, and in the central area of the etching working area. Each sensor is calibrated to zero before collection, and the collection frequency is consistent with that of the etching solution parameter collection in step S1. During the collection process, the working state of the sensor is monitored in real time. If a sensor fails, a fault prompt information is generated and sent to the operator terminal, and a backup sensor is enabled to continue collecting environmental parameters.

7. The method of claim 1, wherein the etching solution is a hydrofluoric acid solution. In the step S3, when analyzing the correlation between the parameters and the corresponding relationship with the etching effect, the real-time collected multi-parameter data of the etching solution are first converted into standardized data, and then the correlation coefficients of concentration and temperature, pH and conductivity are calculated through the multi-parameter correlation model. The real-time parameter combination is compared with the parameter combination in the historical data that meets the etching effect standard in terms of similarity. If the similarity is lower than the preset threshold, it is determined that the etching solution state is abnormal. If the similarity is higher than or equal to the preset threshold, it is determined that the etching solution state is normal.

8. An etching liquor monitoring apparatus adapted for use in an etching liquor monitoring method according to any one of claims 1 to 7, characterised in that, The device comprises a multi-parameter collection module, an environmental parameter collection module, a data processing module, a monitoring adjustment module, and a storage module, which are connected through data transmission lines; The multi-parameter collection module comprises a concentration sensor, a temperature sensor, a pH sensor, and a conductivity sensor, which are used to collect the concentration, temperature, pH, and conductivity parameters of the etching solution and transmit them to the data processing module; The environmental parameter collection module comprises an environmental temperature sensor, an environmental humidity sensor, and an illumination sensor, which are used to collect the temperature, humidity, and illumination parameters of the etching environment and transmit them to the data processing module; The data processing module comprises a data receiving unit and a model storage and operation unit, the data receiving unit receives parameter data transmitted by each module, the model storage and operation unit stores a multi-parameter correlation model and analyzes etching chemical parameter data to determine a state; The monitoring and adjusting module stores environmental parameters and monitoring strategy adjusting rules, generates adjusting instructions according to the environmental parameters and sends the adjusting instructions to the multi-parameter collecting module and the data processing module; The storage module is used for storing parameter data, a judgment result and adjusting instructions.

9. The etch liquor monitoring apparatus of claim 8, wherein, The detection end surface of each sensor in the multi-parameter collecting module is coated with an anti-corrosion coating, each sensor of the environmental parameter collecting module is externally sleeved with a dustproof and waterproof shell, the storage module adopts an SD card expansion storage chip and has a timing automatic backup function, and storage data is backed up to a cloud server at a set time interval.

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