Preparation tray and preparation method of integrally-formed sputtering chip resistor

Abstract

The invention relates to the technical field of electronic component manufacturing, in particular to a preparation tray and a preparation method of an integrally-formed sputtering chip resistor, and the preparation tray comprises a lower support tray, a support frame, a plurality of hanging plates and an upper support tray. The lower supporting disc is provided with an annular notch and an annular sliding plate sliding in the annular notch, and an inner gear ring is arranged on the top of the sliding plate. The bottom of the hanging plate is provided with a gear meshed with the inner gear ring. When the device is used, all the hanging plates can be driven to synchronously deflect by rotating the inner gear ring, so that the target-substrate distance between a substrate carried by the hanging plates and a sputtering cathode is continuously adjusted, a front electrode and a resistance layer are simultaneously deposited on a ceramic substrate of a patterned mask through one-time vacuum sputtering process, integrated forming is realized, and then low-temperature aging is carried out, so that the device is obtained. The flexible and accurate control of the target-substrate distance is realized, the uniformity and density of the film and the electrical property stability of the product are remarkably improved, and the method is particularly suitable for the flexible and efficient production of high-performance precise film chip resistors.

Description

Technical Field

[0001] This invention relates to the field of electronic component manufacturing technology, specifically to a fabrication tray and method for integrally molded sputtered chip resistors. Background Technology

[0002] Surface mount resistors, as fundamental passive components in electronic circuits, are widely used in consumer electronics, communication equipment, automotive electronics, industrial control, and other fields. With the development of electronic devices towards miniaturization, high-density integration, high frequency and speed, and high reliability, the performance requirements for surface mount resistors are increasingly stringent, especially the stability of the temperature coefficient of resistance (TCR), film uniformity, adhesion strength, and long-term reliability.

[0003] Currently, the conductor and resistive layers of surface mount resistors are mainly fabricated using thick-film screen printing. This process involves printing conductive or resistive paste onto a ceramic substrate using a screen, followed by high-temperature sintering (typically above 800°C) to form the film. While this process is mature and relatively inexpensive, it has the following inherent drawbacks: 1. Poor film density: Organic solvents and binders in the slurry volatilize or decompose during sintering, easily leaving pores, which affect the density and electrical stability of the film. 2. Difficulty in controlling film thickness uniformity: Affected by factors such as screen tension, printing pressure, and paste rheology, the film thickness uniformity is poor, resulting in inconsistent resistivity. 3. Large fluctuations in temperature coefficient of resistance (TCR): The inhomogeneity of film composition and microstructure leads to large TCR dispersion, making it difficult to stably control within a narrow range (e.g., within ±100 ppm / ℃).

[0004] Vacuum sputtering coating technology, as a physical vapor deposition (PVD) technique, boasts advantages such as strong film adhesion, high purity, good density, excellent thickness controllability, and uniform composition. It has been successfully applied in fields such as high-precision thin-film resistors and optical coatings. Introducing sputtering technology into chip resistor manufacturing promises to achieve integrated molding of the resistor layer and electrode layer, fundamentally improving product performance. Traditional sputtering trays are mostly fixed structures, with the distance between the mounting plate and the sputtering cathode (target-substrate distance) being non-adjustable. For chip resistors with different batches or resistance values, custom-made trays with different target-substrate distances are required. Changeovers necessitate machine shutdown for tray and tooling replacement, resulting in long setup times (up to 2-3 hours), low equipment utilization, and an inability to meet the flexible production needs of multi-variety, small-batch production. Furthermore, fixed trays are inconvenient for loading and unloading substrates, impacting production efficiency. Summary of the Invention

[0005] To address the shortcomings of existing technologies, the present invention aims to provide a fabrication tray and method for integrally molded sputtered chip resistors. The fabrication tray, through a unique mechanical transmission structure, achieves synchronous and continuous adjustment of the target-substrate spacing between multiple mounting plates. This allows for flexible adaptation to sputtering processes with varying film thickness requirements without changing the tray, significantly improving the equipment's flexible production capabilities. Combined with an optimized sputtering fabrication method, it enables the integral molding of the front electrode and the resistive layer, resulting in highly dense, highly uniform, and stable thin-film chip resistors.

[0006] To achieve the above objectives, the present invention provides the following technical solution: A fabrication tray for integrally molded sputtered chip resistors includes a lower support tray. The top of the lower support tray is provided with an annular groove. A plurality of first bearings are uniformly provided on the top of the lower support tray. The plurality of first bearings are arranged in a ring. An annular slide plate is slidably connected in the annular groove. The top of the annular slide plate is provided with an internal toothed ring. The rotation of the internal toothed ring can drive the annular slide plate to slide smoothly in the annular groove. A support frame, located at the bottom of the lower support plate, is used to support the entire tray structure; Multiple mounting plates are provided, each with a gear fitted onto its bottom shaft. The gear meshes with an internal gear ring, and the bottom shaft of each mounting plate is rotatably mounted in the first bearing. All gears below the mounting plates mesh with the internal gear ring. Therefore, when the internal gear ring rotates, it can simultaneously drive all the mounting plates to deflect synchronously around their axis via gear transmission. An upper support plate is provided on top of multiple hanging plates. Multiple second bearings are provided at the bottom of the upper support plate. The second bearings are sleeved on the outer side of the top shaft of the hanging plate to provide upper support for the rotation of the hanging plate and ensure its smooth rotation. When the internal gear ring rotates, it drives the annular slide plate to slide within the annular groove. The internal gear ring drives multiple gears to rotate synchronously through its teeth, thereby causing multiple mounting plates to deflect around their axis to adjust the target-base distance between the mounting plates and the sputtering cathode.

[0007] The transmission chain, consisting of a ring-shaped slide plate, an internal gear ring, and a gear, causes all the mounting plates to deflect synchronously at a certain angle. After the mounting plate deflects, the relative distance between the substrate it supports and the sputtering cathode changes accordingly.

[0008] As a further embodiment of the present invention, the mounting plate is provided with guide rails, and both the lower support plate and the upper support plate are provided with multiple through holes. The guide rails are used to accurately position and support the carrier for placing the surface mount resistor substrate, preventing the carrier from shifting due to equipment vibration or vacuum airflow during sputtering. The through holes help sputtered particles to uniformly cover the substrate from both the top and bottom, improving film thickness uniformity; facilitate rapid gas balance in the cavity during vacuum evacuation, avoiding the formation of local gas traps; and also assist in heat dissipation, preventing local overheating of the substrate.

[0009] As a further embodiment of the present invention, the support frame includes an annular plate and a plurality of support columns. The support columns are evenly distributed on the top of the annular plate, and the top of each support column is welded to the bottom edge of the lower support plate. The support columns are evenly distributed on the top of the annular plate and welded to the bottom edge of the lower support plate. The annular contact design improves the stability of the tray placement and its adaptability to uneven ground.

[0010] As a further aspect of the present invention, the outer side of the internal toothed ring is provided with multiple slots for manual or tool-driven rotation, making it convenient for operators to apply force with their fingers or tools to drive the internal toothed ring to rotate.

[0011] As a further embodiment of the present invention, the mounting plate can be designed to be independently detachable, which facilitates the replacement of mounting plates with different specifications of carriers according to the size of the surface mount resistors produced, and also facilitates the cleaning and maintenance of the mounting plate.

[0012] The preparation tray also includes a driving device, which is connected to the internal gear ring via a belt drive mechanism. The driving device is used to drive the internal gear ring to rotate, thereby realizing the electric and precise control of the deflection angle of the hanging plate, and can be integrated into the equipment control system.

[0013] A method for fabricating an integrally molded sputtered chip resistor using the above-described fabrication tray includes the following steps: S1: Back electrode fabrication. A back electrode pattern is printed on the back of a ceramic substrate using methods such as screen printing, followed by high-temperature sintering to form a robust back electrode. S2: Substrate Cleaning. The sintered substrate is ultrasonically cleaned to thoroughly remove dust, grease, and other contaminants from the surface, ensuring adhesion of subsequent thin films. S3: Coating the mask layer. A mask material (such as photoresist, special ink, etc.) is coated onto the front side of the cleaned and dried substrate. Through patterning processes such as photolithography, printing, or laser ablation, the mask layer covers only non-sputtering areas (such as pre-reserved dicing lines, marking areas, etc.), while completely exposing the areas where the front electrodes and resistors need to be formed. The function of the mask layer is to prevent thin film material from sputtering into non-functional areas and to ensure good adhesion between the resistors and electrodes. S4: Substrate loading. The masked substrate is precisely placed into a dedicated carrier, which is then slid along the guide rails on the mounting plate and secured. S5: Chamber Entry and Preparation. Transfer the entire substrate-loaded fabrication tray into the vacuum chamber of the sputtering equipment, and close and lock the chamber door. Start the vacuum system and evacuate the chamber to the required baseline vacuum level. Then, introduce process gas (such as argon) into the chamber, precisely control the gas flow rate (e.g., 45 sccm) using a mass flow meter, and adjust it to a stable operating pressure (e.g., 0.2-0.3 Pa). S6: Target pretreatment. Turn on the sputtering power supply and perform short-term pre-sputtering (target cleaning) on ​​the target at a lower power to bombard and remove contaminants such as oxide layer and adsorbed gas on the target surface, obtaining a clean target surface and ensuring the purity of the subsequent sputtered film; S7: Sputtering Deposition. This is the core step. Increase the sputtering power to the process setting. Simultaneously, start the orbital drive mechanism of the sample holder (i.e., the tray), causing the entire tray to rotate at a constant speed of 1-5 r / min, ensuring that all substrates in the chamber receive the sputtered particle stream from the target uniformly. Control the sputtering time according to the desired film thickness (usually around 30 minutes). S8: After sputtering, remove the tray and substrate by hollowing out the cavity. Wash the substrate with water to remove the mask layer on the surface, and then dry it. Finally, perform a low-temperature aging treatment (e.g., heat treatment in air at 360°C for 30-60 minutes) to stabilize the microstructure of the thin film, release internal stress, and further optimize the TCR and long-term stability of the resistor.

[0014] As a further embodiment of the present invention, in step S7, the deflection angle of the multiple mounting plates is adjusted by rotating the internal toothed ring, thereby synchronously adjusting the distance between the substrate and the sputtering cathode on all mounting plates, and realizing the uniformity control of the film thickness.

[0015] As a further embodiment of the present invention, the sputtering target is an alloy target, the sputtering method is DC pulse magnetron sputtering, the low-temperature aging temperature is 350-370℃, and the aging time is 30-90 minutes.

[0016] As a further aspect of the present invention, in step S7, the target material is selected from alloy targets with the desired film composition, such as NiCr-based, TaN-based, CrSi-based, etc. DC pulsed magnetron sputtering is preferred to reduce the risk of target poisoning and improve the deposition rate and film quality.

[0017] Compared with the prior art, the beneficial effects of the present invention are: 1. In use, the preparation tray provided by this invention, through an internal gear ring-gear linkage mechanism, achieves synchronous and continuous angular deflection of all mounting plates with a single drive input, thereby precisely adjusting the target-base distance. This design breaks through the limitations of traditional fixed trays, allowing one device and one tray to adapt to various film thickness processes, greatly enhancing the process flexibility of sputtering equipment, reducing changeover downtime and dedicated tooling inventory, and is particularly suitable for multi-variety, small-batch, and highly mixed production modes. The adjustable tray facilitates automated loading and unloading (such as flipping operations). The simplified process flow and reduced changeover time improve overall production efficiency. The electric drive method can be easily integrated into the central control system of the production line to achieve intelligent production.

[0018] 2. In this invention, vacuum sputtering is used instead of thick-film printing, resulting in a dense, non-porous, high-purity film with strong adhesion. Combined with adjustable target-substrate distance control, the uniformity of film thickness can be optimized, reducing batch-to-batch variations.

[0019] 3. In use, the method of this invention simultaneously forms the front electrode and the resistive layer through a single sputtering deposition, simplifying the process and avoiding the accumulation of errors caused by multiple printing, alignment, and sintering processes. The resistive element and the electrode are metallurgically bonded, resulting in low and stable interface resistance. Attached Figure Description

[0020] Figure 1 This is a three-dimensional structural diagram of a fabrication tray for a one-piece sputtered chip resistor.

[0021] Figure 2 A cross-sectional view of the fabrication tray for a one-piece sputtered chip resistor.

[0022] Figure 3 A schematic diagram of the support disk for the fabrication tray of a one-piece sputtered chip resistor.

[0023] Figure 4 A process flow diagram of the fabrication method for integrally molded sputtered chip resistors.

[0024] In the diagram: 1. Lower support plate; 11. Annular groove; 12. Annular sliding plate; 13. Internal toothed ring; 2. Support frame; 21. Circular plate; 22. Support column; 3. Hanging plate; 31. Gear; 4. Upper support plate. Detailed Implementation

[0025] To address the shortcomings of existing technologies, this invention provides a fabrication tray and method for integrally molded sputtered chip resistors.

[0026] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0027] Please see Figure 1-4 The present invention provides a material tray for fabricating an integrally molded sputtered chip resistor, including a lower support tray 1. The top of the lower support tray 1 is provided with an annular groove 11. A plurality of first bearings are uniformly provided on the top of the lower support tray 1, and the plurality of first bearings are distributed in an annular pattern. An annular slide plate 12 is slidably connected in the annular groove 11. The top of the annular slide plate 12 is provided with an internal toothed ring 13. The rotation of the internal toothed ring can drive the annular slide plate to slide smoothly in the annular groove.

[0028] The support frame 2 is located at the bottom of the lower support plate 1 and is used to support the entire material tray structure.

[0029] Multiple mounting plates 3 are provided, each with a gear 31 mounted on its bottom shaft. The gear 31 meshes with the internal gear ring 13. The bottom shaft of each mounting plate 3 is rotatably mounted in the first bearing. The gears below the multiple mounting plates all mesh with the internal gear ring. Therefore, when the internal gear ring rotates, it can simultaneously drive all the mounting plates to deflect synchronously around its axis through gear transmission.

[0030] The mounting plates 3 are elongated strip-shaped structures, and their number corresponds to the number of first bearings on the lower support plate 1, for example, 12, 18, or 24, designed according to production capacity requirements. Each mounting plate 3 has an upper shaft and a lower shaft at its upper and lower ends, respectively. The lower shaft of the mounting plate 3 is inserted into the inner ring of the corresponding first bearing on the lower support plate 1, achieving a rotatable connection. Near the bottom of the lower shaft, a gear 31 is fixedly fitted (e.g., connected by a key). All gears 31 on the mounting plates 3 are at the same height and mesh with the teeth on the inner side of the internal gear ring 13. The front side of the mounting plate 3 (the side facing the center of the tray) is machined with parallel guide rails for precisely inserting and fixing the strip carrier that supports the chip resistor substrate.

[0031] The upper support plate 4 is located on top of the multiple hanging plates 3. The bottom of the upper support plate 4 is provided with multiple second bearings. The second bearings are sleeved on the outer side of the top shaft of the hanging plate 3 to provide upper support for the rotation of the hanging plate and ensure its smooth rotation.

[0032] The upper support plate 4 is a circular disc concentric with the lower support plate 1, and its diameter may be slightly smaller. At the bottom edge of the upper support plate 4, corresponding to the position of each hanging plate 3, a second bearing (not individually labeled in the figure) is installed. The upper shaft of the hanging plate 3 is inserted into the inner ring of the corresponding second bearing. In this way, both the upper and lower ends of the hanging plate 3 are supported by bearings, allowing it to rotate very smoothly around its own axis.

[0033] When the internal gear ring 13 rotates, it drives the annular slide plate 12 to slide in the annular groove 11. The internal gear ring 13 drives multiple gears 31 to rotate synchronously through its teeth, thereby driving multiple hanging plates 3 to deflect around their axis to adjust the target distance between the hanging plate 3 and the sputtering cathode.

[0034] The transmission chain of annular slide plate-internal gear ring-gear allows all mounting plates to deflect synchronously at a certain angle. After the mounting plate deflects, the relative distance between the substrate it supports and the sputtering cathode (target-substrate distance) changes accordingly.

[0035] In some embodiments, the mounting plate 3 is provided with guide rails, and both the lower support plate 1 and the upper support plate 4 are provided with multiple through holes. The guide rails are used to accurately position and support the carrier, such as a jig strip or tray, for placing the chip resistor substrate, preventing the carrier from shifting due to equipment vibration or vacuum airflow during sputtering. The through holes help sputtered particles to uniformly cover the substrate from both the top and bottom, improving film thickness uniformity; facilitate rapid gas balance in the cavity during vacuum evacuation, avoiding the formation of local gas traps; and also assist in heat dissipation, preventing local overheating of the substrate.

[0036] In some embodiments, the support frame 2 includes an annular plate 21 and a plurality of support columns 22. The support columns 22 are evenly distributed on the top of the annular plate 21, and the top of the support columns 22 is welded to the bottom edge of the lower support plate 1. The support columns are evenly distributed on the top of the annular plate and welded to the bottom edge of the lower support plate. The annular contact design improves the stability of the tray placement and adaptability to uneven ground.

[0037] In some embodiments, the outer side of the internal toothed ring 13 is provided with a plurality of slots for manual or tool-driven rotation, so that the operator can apply force with fingers or tools to drive the internal toothed ring to rotate.

[0038] In some embodiments, the mounting plate may be designed to be independently detachable, which facilitates the replacement of mounting plates with different specifications of carriers according to the size of the surface mount resistors produced, and also facilitates the cleaning and maintenance of the mounting plate.

[0039] In some embodiments, the drive device is connected to the internal gear ring 13 via a belt drive mechanism to drive the internal gear ring 13 to rotate, thereby achieving electric and precise control of the deflection angle of the hanging plate, and can be integrated into the equipment control system.

[0040] When the target-substrate distance needs adjustment, the operator (or via motor drive) rotates the internal gear ring 13. The internal gear ring 13 drives the annular slide plate 12 at its bottom to slide within the annular groove 11, maintaining smooth movement. The rotation of the internal gear ring 13, through the meshing of its teeth with all gears 31, drives all gears 31 to rotate synchronously and in the same direction. Since the gears 31 are fixed to the lower shaft of the mounting plate 3, all mounting plates 3 also synchronously deflect around their axis by the same angle (e.g., tilting 0-30 degrees from the vertical position towards the center). After the mounting plate 3 deflects, the distance between the substrate it supports and the sputtering cathode directly in front (or to the side, depending on the cathode arrangement) changes accordingly. By calibrating the average target-substrate distance and deposition rate corresponding to different angles, the film thickness can be precisely controlled by setting the angle. When loading or flipping is required, all mounting plates 3 can be rotated 180 degrees so that the supporting surface faces outwards for easy operation.

[0041] This embodiment provides a method for preparing chip resistors using the preparation tray described in the above embodiment. The specific steps are as follows: S1: Back electrode fabrication. A back electrode pattern is printed on the back of a ceramic substrate using methods such as screen printing, followed by high-temperature sintering to form a robust back electrode. S2: Substrate Cleaning. The sintered substrate is ultrasonically cleaned to thoroughly remove dust, grease, and other contaminants from the surface, ensuring adhesion of subsequent thin films. S3: Coating the mask layer. A mask material (such as photoresist, special ink, etc.) is coated onto the front side of the cleaned and dried substrate. Through patterning processes such as photolithography, printing, or laser ablation, the mask layer covers only non-sputtering areas (such as pre-reserved dicing lines, marking areas, etc.), while completely exposing the areas where the front electrodes and resistors need to be formed. The function of the mask layer is to prevent thin film material from sputtering into non-functional areas and to ensure good adhesion between the resistors and electrodes. S4: Substrate loading. The masked substrate is precisely placed into a dedicated carrier, which is then slid along the guide rails on the mounting plate and secured. S5: Chamber Entry and Preparation. Transfer the entire substrate-loaded fabrication tray into the vacuum chamber of the sputtering equipment, and close and lock the chamber door. Start the vacuum system and evacuate the chamber to the required baseline vacuum level. Then, introduce process gas (such as argon) into the chamber, precisely control the gas flow rate (e.g., 45 sccm) using a mass flow meter, and adjust it to a stable operating pressure (e.g., 0.2-0.3 Pa). S6: Target pretreatment. Turn on the sputtering power supply and perform short-term pre-sputtering (target cleaning) on ​​the target at a lower power to bombard and remove contaminants such as oxide layer and adsorbed gas on the target surface, obtaining a clean target surface and ensuring the purity of the subsequent sputtered film; S7: Sputtering Deposition. This is the core step. Increase the sputtering power to the process setting value. Simultaneously, start the revolution drive mechanism of the sample holder (i.e., the tray), so that the entire tray rotates at a constant speed of 1-5 r / min, ensuring that all substrates in the chamber can uniformly receive the sputtered particle stream from the target. Control the sputtering time (usually around 30 minutes) according to the required film thickness. During this process, the deflection angle of all the mounting plates can be adjusted in real time or in stages by driving the internal gear ring, thereby synchronously changing the target-substrate distance between all substrates and the sputtering cathode. By precisely controlling this key parameter of target-substrate distance, the deposition rate and film thickness distribution can be actively controlled, achieving high-precision management of film thickness and uniformity. In this invention, a continuous metal or alloy film can be deposited simultaneously in the exposed area of ​​the substrate through a single sputtering process. This film serves as both a front electrode and a resistor through its own resistive properties (or after subsequent fine-tuning), achieving integrated "electrode-resistor" molding.

[0042] S8: After sputtering, remove the tray and substrate by hollowing out the cavity. Wash the substrate with water to remove the mask layer on the surface, and then dry it. Finally, perform a low-temperature aging treatment (e.g., heat treatment in air at 360°C for 30-60 minutes) to stabilize the microstructure of the thin film, release internal stress, and further optimize the TCR and long-term stability of the resistor.

[0043] In step S7, the deflection angle of the multiple mounting plates 3 is adjusted by rotating the internal toothed ring 13, thereby synchronously adjusting the distance between the substrate and the sputtering cathode on all mounting plates 3, and achieving uniform control of the film thickness.

[0044] The sputtering target is an alloy target, the sputtering method is DC pulse magnetron sputtering, the low-temperature aging temperature is 350-370℃, and the aging time is 30-90 minutes.

[0045] In step S7, the target material is selected from alloy targets with the desired film composition, such as NiCr-based, TaN-based, and CrSi-based targets. DC pulsed magnetron sputtering is preferred to reduce the risk of target poisoning and improve the deposition rate and film quality.

[0046] In this embodiment, the material tray can also be upgraded to be automated by fixing a servo motor under the annular plate 21 of the support frame 2. A small gear is installed on the output shaft of the servo motor. This small gear is connected to a pulley mounted on the outer edge of the internal gear ring 13 via a synchronous belt. Through the equipment control system, the servo motor can be programmed to rotate at a specific angle, thereby precisely controlling the deflection angle of all the hanging plates 3. An angle encoder provides feedback to achieve closed-loop control. This system can realize automatic recall of process recipes and perform dynamic angle adjustments during sputtering (e.g., periodic small-amplitude oscillations can be performed to compensate for edge effects), further improving the control level of film thickness uniformity.

[0047] The above description is only a preferred embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any equivalent substitutions or modifications made by those skilled in the art within the scope of the technology disclosed in the present invention, based on the technical solution and inventive concept of the present invention, should be covered within the scope of protection of the present invention.

Claims

1. A preparation tray of an integrally formed sputtering chip resistor, characterized by, Including lower support disc (1), the top of lower support disc (1) is equipped with annular notch (11), the top of lower support disc (1) is uniformly equipped with a plurality of first bearing, a plurality of first bearing is annular distribution, annular notch (11) is slidably connected with annular slide plate (12), the top of annular slide plate (12) is equipped with inner tooth ring (13); Support frame (2) is equipped with the bottom of lower support disc (1); A plurality of hanging plate (3), the bottom shaft of each hanging plate (3) is equipped with gear (31), gear (31) is engaged with inner tooth ring (13), the bottom shaft of hanging plate (3) is rotatably installed in first bearing; Upper support disc (4) is equipped with the top of a plurality of hanging plate (3), the bottom of upper support disc (4) is equipped with a plurality of second bearing, the second bearing is equipped with the top shaft of hanging plate (3); When inner tooth ring (13) rotates, annular slide plate (12) is slid in annular notch (11), inner tooth ring (13) drives a plurality of gear (31) synchronous rotation through gear teeth, thereby drive a plurality of hanging plate (3) deflection around its axis, to adjust the target base distance between hanging plate (3) and sputtering cathode.

2. The preparation disc of the integrally formed sputtering chip resistor according to claim 1, wherein, The hanging plate (3) is provided with a guide rail, and the lower support disc (1) and the upper support disc (4) are both provided with a plurality of through holes.

3. The preparation disc of the integrally formed sputtering chip resistor according to claim 1, wherein, The support frame (2) comprises a ring plate (21) and a plurality of support columns (22), the support columns (22) are uniformly arranged on the top of the ring plate (21), and the top ends of the support columns (22) are welded with the bottom edges of the lower support disc (1).

4. The preparation disc of the integrally formed sputtering chip resistor according to claim 1, wherein, The outer side of the inner tooth ring (13) is provided with a plurality of notches for manually or tool driven rotation.

5. The preparation tray of the integrally formed sputtered chip resistor according to claim 1, wherein, The preparation tray further comprises a driving device connected with the inner tooth ring (13) through a belt transmission mechanism for driving the rotation of the inner tooth ring (13).

6. A method of manufacturing an integrally formed sputtered chip resistor using the tray of any of claims 1-5, wherein, The preparation tray further comprises a driving device connected with the inner tooth ring (13) through a belt transmission mechanism for driving the rotation of the inner tooth ring (13). The preparation tray further comprises a driving device connected with the inner tooth ring (13) through a belt transmission mechanism for driving the rotation of the inner tooth ring (13). S1: printing back electrode paste on the back of the ceramic substrate and high temperature sintering; S2: ultrasonic cleaning the sintered substrate to remove surface contaminants; S3: coating a mask layer on the surface of the substrate, the mask layer covers the non-sputtering area, and exposes the resistance body and electrode area to be sputtered; S4: loading the substrate into the carrier, and installing the carrier on the hanging plate (3) of the preparation tray; S5: placing the preparation tray into the vacuum cavity of the sputtering equipment, closing the hatch and pumping, introducing argon, adjusting the gas flow to 40-50 sccm, and maintaining the working vacuum degree at 0.2-0.3 Pa; S6: turn on the sputtering power, clean the target material, and remove the surface oxide layer of the target material; S7: start the sample holder rotation, the speed is 1-5 r / min, start sputtering deposition, control the sputtering time to form the required thickness of the front electrode and resistance layer; S8: after sputtering, water washing, drying and low temperature aging treatment are carried out on the substrate.

7. The method of claim 6, wherein the method further comprises the step of: In step S7, the deflection angle of the plurality of hanging plates (3) is adjusted by rotating the inner tooth ring (13), so as to synchronously adjust the distance between the substrate and the sputtering cathode on all the hanging plates (3), and realize the uniformity control of the film thickness.

8. The method of claim 6, wherein the sputtered patch resistor is formed in one piece. The sputtering target is an alloy target, the sputtering mode is direct current pulse magnetron sputtering, the low-temperature aging temperature is 350-370 DEG C, and the aging time is 30-90 minutes.

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