Electron gun and ion source collaborative evaporation coating method, control method and control system

Abstract

The invention belongs to the technical field of vacuum coating, and relates to an electron gun and ion source collaborative evaporation coating method, a control method and a control system. The electronic gun and ion source collaborative evaporation coating control method comprises the steps that key parameters in the coating process are continuously collected, and an electronic gun beam initial value and an ion source gas flow initial value are dynamically generated according to state diagnosis results of all the parameters; the beam current value of the electron gun and the gas flow value of the ion source are corrected in real time to inhibit the disturbance of the ion source to the beam current of the electron gun, and the electron gun and the ion source are cooperatively regulated and controlled to ensure the precise control of the coating uniformity; the invention further discloses an electron gun and ion source collaborative evaporation coating method, local hot spot compensation and global uniformity compensation are carried out by adopting a film thickness compensation mechanism so as to accurately control the film thickness. According to the invention, the cooperative control of the electron gun evaporation and ion bombardment process is realized, the film adhesion is enhanced, the evaporation coating rate is improved, and the film thickness uniformity is improved.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of vacuum coating. In particular, it relates to an electron gun and ion source coordinated evaporation coating method, control method and control system. BACKGROUND

[0002] Vacuum coating technology is a key process for preparing thin films on material surfaces, widely used in optical, electronic and mechanical protection fields. With the development of science and technology, the requirements for coating quality and efficiency are continuously improving, driving continuous innovation in the technology.

[0003] Vacuum coating technology in the field of optics, electronics and other fields is facing increasingly stringent quality requirements, but the existing electron gun-ion source coordination system has many problems. First, the ion source will generate a large amount of plasma, changing the overall electromagnetic environment in the coating chamber, which may interfere with the electron beam path emitted by the electron gun, causing the electron beam spot to jump, diverge or focus unstable. The instability of the electron beam spot directly leads to uneven heating of the evaporation source, causing a sharp fluctuation in the evaporation rate; secondly, the ion source usually needs to be connected to the working gas, which will significantly increase the working gas pressure in the chamber. Higher gas pressure will increase the probability of collision between the electron beam and gas molecules, resulting in energy loss of the electron beam, reducing the heating efficiency, and making it more difficult to control the power of the electron gun required to maintain a constant evaporation rate. In addition, due to the fluctuation of evaporation rate and the unevenness of ion assistance, the repeatability of film thickness and thin film performance is difficult to guarantee between different positions of the same furnace and different furnace times. The instability of ion energy and flow will also cause the internal stress of the thin film to fluctuate, which may lead to a decrease in the adhesion of the thin film or easy cracking.

[0004] To solve this problem, the existing technology proposes to continuously collect and fuse key real-time parameters to evaluate the coating state, and then dynamically generate electron beam control target instructions by a decision mechanism to achieve stable control of the evaporation rate; the existing technology also proposes to collect the spot image of the electron gun on the target material, compare the actual spot profile with the theoretical spot profile, and obtain the deviation result, and adjust the electron gun control parameters according to the deviation result to improve the coating precision and quality. But the control method provided by the existing technology only controls the electron gun and does not involve the coordinated control technology of the electron gun and the ion source. The existing technology cannot adjust the disturbance of the ion source to the electron gun evaporation coating process, so it cannot achieve the purpose of accurately controlling the coating precision. SUMMARY

[0005] The electronic gun and ion source cooperative evaporation coating method, control method and control system disclosed by the present application can realize the cooperative control of the electronic gun evaporation and ion bombardment process, enhance the film adhesion, improve the evaporation coating rate and the film thickness uniformity.

[0006] In a first aspect, the present application provides an electronic gun and ion source cooperative evaporation coating control method, which comprises the following steps: dynamically generating an initial value of the electron gun beam current and an initial value of the ion source gas flow rate; adding the feedforward compensation increment to the initial value of the electron gun beam current to obtain an electron gun beam current correction value; wherein the feedforward compensation increment is the product of the feedforward gain, the coupling coefficient, the ion energy and the ion beam current; and the electron gun beam current correction value is used as the input setting value of the electron gun PID controller; The electron gun PID controller receives the output beam current adjustment value at the same time, and adds the output beam current adjustment value to the electron gun beam current correction value to obtain the electron gun beam current execution value; wherein the output beam current adjustment value is the difference between the actual evaporation rate and the preset evaporation rate; The initial value of the ion source gas flow rate is used as the input setting value of the ion source PID controller to control the ion source execution module.

[0007] As a possible implementation manner, the initial value of the electron gun beam current and the initial value of the ion source gas flow rate are dynamically generated, and the generation specifically comprises: data acquisition, specifically including the acquisition of the evaporation rate, the ion energy, the ion beam current and the evaporation source pool state parameter; coating state evaluation, specifically including: evaluating the stability of the evaporation rate according to the moving average and the moving standard deviation of the evaporation rate; the evaporation source pool state parameter specifically includes the temperature distribution and the melting area, and the melting state of the evaporation source pool is evaluated according to the temperature distribution and the melting area; the ion bombardment disturbance intensity is evaluated according to the ion energy and the ion beam current; the coating process index is configured, specifically including the evaporation rate stability index, the melting state index of the evaporation source pool and the ion bombardment disturbance intensity index; the coating state diagnosis result is obtained by comparing the evaluation result with the corresponding coating process index; The initial value of the electron gun beam and the initial value of the ion source gas flow are dynamically generated according to the state diagnosis result.

[0008] As a possible implementation, the feedforward compensation increment is obtained by the following method: Based on the ion beam current, the ion energy and the calibrated coupling coefficient, the disturbance value of the ion source to the electron gun is obtained through the coupling equation; The feedforward gain is configured, and the disturbance value is multiplied by the feedforward gain to obtain the feedforward compensation increment.

[0009] As a possible implementation, the coupling coefficient is corrected in real time, specifically including: The deviation threshold of the evaporation rate is configured; It is judged whether the actual deviation of the evaporation rate is greater than or equal to the deviation threshold; if not, the coupling coefficient is not corrected; if yes, the coupling coefficient is corrected by the recursive least squares method, and the corrected coupling coefficient is transmitted to the coupling equation.

[0010] As a possible implementation, the coupling coefficient is corrected by the recursive least squares method, specifically: the corrected coupling coefficient is denoted as , the coupling coefficient before correction is denoted as , and the corrected coupling coefficient is obtained by the following method : Wherein, , is the ion beam current at the current moment, is the ion energy at the current moment; is the disturbance value error; is the forgetting factor; is the covariance matrix of the recursive least squares method at the last moment.

[0011] As a possible implementation, the feedforward gain is denoted as , which is adaptively adjusted according to the evaporation source molten pool state parameter, specifically as follows: Wherein, is the feedforward gain after adaptive adjustment; is the basic feedforward gain; is the molten area; is the evaporation source molten pool area reference value; is the viscosity coefficient of the evaporation source molten pool; is a parameter for adjusting the influence degree of the evaporation source molten pool state on the feedforward gain; is the evaporation source molten pool state influence coefficient.

[0012] In a second aspect, the present invention provides a method for co-evaporation deposition of electron gun and ion source, comprising the following steps: using a co-evaporation deposition control method of electron gun and ion source to control the electron gun execution module and the ion source execution module to perform thin film deposition; During the thin film deposition process, a film thickness compensation mechanism is used to compensate for local hot spots and global uniformity.

[0013] As one possible implementation method, local hotspot compensation specifically involves: acquiring the surface film thickness distribution, comparing it with the target uniformity to generate a regional deviation matrix, denoted as... ; the substrate surface Local film thickness deviation at location and velocity compensation ratio Multiplying these together yields the local speed adjustment command for the electron gun scanning motor. The electron gun scanning motor is adjusted according to local speed commands. Perform the task and complete the local hotspot compensation.

[0014] As one possible implementation method, global uniformity compensation specifically involves comparing the real-time film thickness with the target film thickness to obtain the instantaneous deviation of all monitoring points, and averaging the instantaneous deviations of all points to obtain the global average deviation. ; Calculate the compensation command for the output ion source gas flow valve The calculation method is as follows: in, The gain parameter of the ion source PID controller is used to quickly respond to deviations; This is the gain parameter of the ion source PID controller, used to eliminate steady-state error.

[0015] Thirdly, the present invention provides a control system for the coordinated evaporation and coating of an electron gun and an ion source, comprising: The multi-source data sensing module is used to collect evaporation rate, ion energy, ion beam current and evaporation source molten pool state parameters; The data processing module processes multi-source data into standardized data; The coating condition assessment module evaluates the stability of the evaporation rate based on the moving average and moving standard deviation of the evaporation rate. The evaporation source molten pool condition parameters specifically include temperature distribution and melt area, which are used to assess the molten state of the evaporation source molten pool. The module also assesses the severity of ion bombardment disturbance based on ion energy and ion beam current. Furthermore, the module is equipped with coating process indicators, including evaporation rate stability indicators, molten state indicators of the evaporation source molten pool, and indicators of the severity of ion bombardment disturbance. By comparing the assessment results with the corresponding coating process indicators, a coating condition diagnosis result is obtained. The decision control module dynamically generates the initial values ​​of the electron gun beam and the ion source gas flow rate based on the status diagnosis results. The dynamic decoupling module superimposes the feedforward compensation increment onto the initial value of the electron gun beam to obtain the electron gun beam correction value; wherein, the feedforward compensation increment is the product of the feedforward gain, coupling coefficient, ion energy and ion beam current; the electron gun beam correction value serves as the input setting value of the electron gun control module; The electron gun control module simultaneously receives the output beam adjustment amount and superimposes the output beam adjustment amount with the electron gun beam correction value to obtain the electron gun beam execution value; wherein, the output beam adjustment amount is the difference between the measured evaporation rate and the preset evaporation rate; The ion source control module uses the initial value of the ion source gas flow rate as the input setpoint to control the ion source execution module. The execution module includes an electron gun execution module and an ion source execution module.

[0016] Compared with the prior art, the beneficial effects of the present invention are as follows: 1. The present invention provides a method for controlling the synergistic evaporation deposition of electron gun and ion source, which adopts a joint optimization algorithm based on synergistic control of electron gun and ion source, and realizes the synergistic control of electron gun evaporation deposition and ion source assisted deposition through real-time monitoring and feedback mechanism, thereby enhancing the adhesion of the film layer.

[0017] 2. The present invention provides a method for controlling the evaporation coating of electron gun and ion source in a coordinated manner. Through dynamic decoupling and feedforward compensation mechanism, the perturbation of ion bombardment on the evaporation rate is corrected in real time. The perturbation value is quantified based on the decoupling equation, and a compensation signal is generated in advance to correct the electron gun beam. At the same time, the coupling coefficient is updated online by recursive least squares method, and the feedforward gain is adaptively adjusted in combination with the state of the evaporation source molten pool to improve the stability of the evaporation rate.

[0018] 3. The present invention provides a control method for the coordinated evaporation deposition of electron gun and ion source. Through a layered control strategy, in terms of global optimization, a PID controller is used to dynamically adjust the ion source gas flow rate according to the average film thickness deviation to stabilize the deposition rate; in terms of local compensation, a proportional controller is used to drive the electron gun scanning speed to slow down and delay in areas with insufficient film thickness to improve film thickness uniformity. Attached Figure Description

[0019] The accompanying drawings, which are included to provide a further understanding of the invention and form part of this invention, illustrate exemplary embodiments of the invention and are used to explain the invention, but do not constitute an undue limitation of the invention. In the drawings: Figure 1 This is a flowchart of the control system for electron gun-assisted ion source evaporation coating provided in an embodiment of the present invention; Figure 2 The flowchart of the electron gun-assisted ion source evaporation coating steps provided in this embodiment of the invention; Figure 3 The present invention provides an embodiment of the electron gun and ion source coordinated control diagram for evaporation coating based on electron gun and ion source.

[0020] Figure Labels 1- The multi-source data sensing module transmits the evaporation rate signal to the electron gun control module; 2- The multi-source data sensing module transmits ion energy and ion beam signals to the dynamic decoupling module; 3- The decision control module outputs the electron gun beam signal to the dynamic decoupling module; 4- The dynamic decoupling module outputs the suppressed disturbance electron gun beam signal to the electron gun control module; 5. The decision control module outputs the ion source gas flow signal to the ion source control module; 6. The feedback compensation module outputs an ion source gas flow compensation signal to the ion source control module; 7- The feedback compensation module outputs the electron gun scanning speed compensation signal to the electron gun control module; 8. The feedback compensation module outputs a status signal to the status evaluation module for status update; 9. The multi-source data sensing module transmits signals of evaporation rate, ion energy, ion beam current, and evaporation source molten pool status to the data processing module; 10. The data processing module transmits standardized data to the status assessment module; 11- The status assessment module outputs the status diagnosis results to the decision control module. Detailed Implementation

[0021] To facilitate a clear description of the technical solutions in the embodiments of the present invention, the terms "first" and "second" are used to distinguish identical or similar items with essentially the same function and effect. For example, the first threshold and the second threshold are merely used to distinguish different thresholds and do not limit their order. Those skilled in the art will understand that the terms "first" and "second" do not limit the quantity or execution order, and the terms "first" and "second" are not necessarily different.

[0022] It should be noted that in this invention, the terms "exemplary" or "for example" are used to indicate examples, illustrations, or descriptions. Any embodiment or design described as "exemplary" or "for example" in this invention should not be construed as being more preferred or advantageous than other embodiments or designs. Specifically, the use of terms such as "exemplary" or "for example" is intended to present the relevant concepts in a concrete manner.

[0023] In this invention, "at least one" refers to one or more, and "more than one" refers to two or more. "And / or" describes the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A alone, A and B simultaneously, or B alone, where A and B can be singular or plural. The character " / " generally indicates that the preceding and following related objects are in an "or" relationship. "At least one of the following" or similar expressions refer to any combination of these items, including any combination of singular or plural items. For example, "at least one of a, b, or c" can represent: a, b, c, a combination of a and b, a combination of a and c, a combination of b and c, or a, b, and c, where a, b, and c can be single or multiple.

[0024] This invention aims to provide a method for controlling the synergistic evaporation coating of an electron gun and an ion source. It continuously collects key parameters during the coating process, dynamically generates initial values ​​for the electron gun beam current and ion source gas flow rate based on the diagnostic results of each parameter's status, and corrects these values ​​in real time to suppress disturbances from the ion source to the electron gun beam current. The synergistic regulation of the electron gun and ion source ensures precise control of coating uniformity. This invention also discloses a synergistic evaporation coating method using an electron gun and ion source, employing a film thickness compensation mechanism for local hotspot compensation and global uniformity compensation to precisely control the film thickness.

[0025] In a first aspect, the present invention provides a method for controlling the synergistic evaporation coating of an electron gun and an ion source, comprising the following steps: Dynamically generate initial values ​​for electron gun beam current and ion source gas flow rate; The feedforward compensation increment is superimposed on the initial value of the electron gun beam to obtain the electron gun beam correction value; wherein, the feedforward compensation increment is the product of the feedforward gain, coupling coefficient, ion energy and ion beam current; the electron gun beam correction value is used as the input setpoint of the electron gun PID controller. The electron gun PID controller simultaneously receives the output beam current adjustment amount and superimposes the output beam current adjustment amount with the electron gun beam current correction value to obtain the electron gun beam current execution value; wherein, the output beam current adjustment amount is the difference between the measured evaporation rate and the preset evaporation rate; The initial value of the ion source gas flow rate is used as the input setpoint for the ion source PID controller to control the ion source execution module.

[0026] Among them, electron gun beam refers to a high-energy-density electron beam generated, accelerated and focused by an electron gun; Among them, the ion source gas flow rate refers to the flow rate of the plasma cloud formed by the electric current of neutral atoms or molecules from which the ion beam is drawn; Among them, the initial values ​​of electron gun beam current and ion source gas flow rate are dynamically generated in real time based on the coating status diagnosis results.

[0027] Feedforward compensation, based on the principle of invariance, refers to adjusting the system input in advance to counteract the impact of disturbances on the system, thereby improving system stability and control accuracy. Feedforward compensation increment refers to the compensation amount calculated by detecting disturbance signals in advance and superimposing it onto the main controller output to counteract the disturbance. As an example, when the comprehensive evaluation result of multiple indicators does not meet the preset coating process requirements, it is judged as not meeting the coating state, triggering the decision-making mechanism to adjust the control target command and use the feedforward compensation increment to correct the electron beam current value.

[0028] Among them, the electron gun beam correction value refers to the value of adding the initial value of the electron gun beam with the feedforward compensation increase using an algebraic method to compensate for the error of the electron gun execution module.

[0029] Among them, the feedforward gain and coupling coefficient are the calculation parameters of the feedforward compensation increment. The feedforward gain is determined by the real-time state of the evaporation source molten pool, and the coupling coefficient is determined by the real-time value of the ion beam.

[0030] Among them, ion energy refers to the energy released by the ionization of atoms or atomic groups, which is collected by the multi-source data sensing module; ion beam refers to the fluid intensity generated by a group of ions moving at approximately the same speed in almost the same direction, which is collected by the multi-source data sensing module.

[0031] The PID controller is a common feedback loop component in industrial control applications, consisting of a proportional unit (P), an integral unit (I), and a derivative unit (D). The PID controller compares the acquired data with reference data, and then uses the difference between the acquired and reference values ​​to calculate a new input value. This ensures that the system data reaches or remains at the reference value. The PID controller can adjust the input value based on historical data and the frequency of differences, making the system more accurate and stable.

[0032] Specifically, based on the coating process requirements (such as material evaporation rate, film thickness requirements, etc.), an initial value for the electron gun beam current is dynamically generated. This value serves as the benchmark for subsequent adjustments, ensuring the system can quickly respond to process changes. Simultaneously, based on the requirements for ion source-assisted coating (such as ion beam intensity, energy, etc.), an initial value for the ion source gas flow rate is dynamically generated. These two initial values ​​serve as input setpoints for the electron gun PID controller and the ion source PID controller, respectively, to control the electron gun execution module and the ion source execution module.

[0033] For ion source control, the initial value of the ion source gas flow rate is used as the input setpoint for the ion source PID controller, which controls the ion source execution module. Through PID control, precise conditions for the ion source gas flow rate are achieved, ensuring stable control of the ion beam. The ion source provides a suitable high-energy ion beam to assist material deposition during the electron gun evaporation coating process, improving film adhesion and density.

[0034] In the coating process, the ion source bombardment inevitably causes fluctuations and interference to the electron gun, resulting in errors in the electron gun execution module. To address this, a feedforward compensation increment is added to the initial electron gun beam current to obtain a corrected beam current value. This corrected beam current value serves as the input setpoint for the electron gun PID controller, used for subsequent closed-loop control to achieve precise control of the actual beam output and evaporation rate. The feedforward compensation increment can compensate for the influence of the ion source on the electron gun beam current in advance, improving system response speed. Through feedforward compensation, the system can more accurately predict the interference of the ion source on the electron gun beam current, reducing control errors.

[0035] As an example, the calculation process for the electron gun beam execution value is as follows: (1) The feedforward compensation increment is superimposed on the initial value of the electron gun beam to generate the corrected setting command. in, This is the correction value for the electron gun beam. This represents the initial value of the electron beam current; (2) The revised As the input setpoint for the electron gun PID controller, the PID controller simultaneously receives the evaporation feedback signal measured by the quartz crystal microbalance, compares it with the target evaporation rate, and outputs the beam current adjustment amount, i.e., the difference between the measured evaporation rate and the target evaporation rate. The final execution instruction is: in, The electron gun ultimately controls the beam; This is the adjustment amount for the output beam current.

[0036] The dynamic adjustment of the ion source gas flow rate is combined with the feedforward compensation of the electron gun beam to achieve efficient synergistic control of the two, enabling the system to respond quickly to process changes, maintain a stable evaporation rate, and improve coating quality.

[0037] Compared with existing technologies, this solution solves the technical problems of low film adhesion and difficulty in controlling film uniformity in traditional coating control methods by using a collaborative evaporation coating of electron gun and ion source. It establishes a real-time panoramic perception of the process status through multi-source sensor data, employs feedforward compensation to mitigate the interference of ion bombardment on the electron gun evaporation coating process, and collaboratively optimizes the parameter matching of the electron gun and ion source to achieve the process objectives.

[0038] Through the above technical solutions, this invention effectively reduces the interference of the ion source on the electron gun, improving film thickness uniformity, film density, and adhesion. By co-controlling the electron gun and ion source, film adhesion and density are enhanced, the film evaporation rate is increased, and film thickness uniformity is optimized. Furthermore, by compensating for gain, the interference of the ion source on the electron gun is effectively reduced, improving system heating efficiency, reducing evaporation rate fluctuations, and lowering the system's control complexity.

[0039] As one possible implementation, the initial values ​​of the electron gun beam current and the ion source gas flow rate are dynamically generated, specifically including: Data acquisition specifically includes collecting evaporation rate, ion energy, ion beam current, and molten pool state parameters of the evaporation source; The coating condition assessment specifically includes: evaluating the stability of the evaporation rate based on the moving average and moving standard deviation of the evaporation rate; assessing the melting state of the evaporation source molten pool based on the temperature distribution and melting area; evaluating the severity of ion bombardment disturbance based on ion energy and ion beam current; configuring coating process indicators, specifically including evaporation rate stability indicators, melting state indicators of the evaporation source molten pool, and indicators of the severity of ion bombardment disturbance; comparing the assessment results with the corresponding coating process indicators to obtain the coating condition diagnosis results. The initial values ​​of the electron gun beam and the ion source gas flow rate are dynamically generated based on the status diagnosis results.

[0040] Evaporation rate refers to the mass of material evaporated per unit area per unit time. This parameter directly affects the density, uniformity, and purity of the coating.

[0041] Ion energy refers to the energy released by the ionization of atoms or atomic groups; ion beam refers to the fluid intensity produced by a group of ions moving at approximately the same velocity in almost the same direction. These two parameters are used to assess the intensity of ion bombardment disturbances.

[0042] Among them, the evaporation source molten pool refers to the temporary storage area of ​​the target material in the vapor deposition process. Its state stability directly affects the evaporation rate and coating quality; its state parameters include temperature distribution and molten area.

[0043] Among them, coating status assessment refers to quantitative testing or calculation of coating status, and evaluation of coating quality based on the test or calculation results; quantitative evaluation indicators include the stability of evaporation rate, the melting state of the evaporation source molten pool, and the severity of ion bombardment disturbance; as an example, when the evaporation rate is unstable and the ion bombardment disturbance is large, the decision mechanism reduces the ion source gas flow rate and increases the electron gun beam current.

[0044] Specifically, when the coating system starts operating, the multi-source data sensing module collects data on evaporation rate, ion energy, ion beam current, and the state parameters of the evaporation source molten pool. The collected data is then compared with the system's configured standard values ​​(reference values), including: (1) Assess the stability of the evaporation rate based on the moving average and moving standard deviation of the evaporation rate; (2) The specific parameters of the evaporation source molten pool include temperature distribution and melting area. The melting state of the evaporation source molten pool is evaluated based on the temperature distribution and melting area. (3) Assess the severity of ion bombardment disturbance based on ion energy and ion beam current.

[0045] Based on the comparative evaluation results, the coating status diagnosis results are obtained. Based on these diagnosis results, the initial values ​​of the electron gun beam current and the initial values ​​of the ion source gas flow rate are dynamically generated in real time to serve as the basis for the input parameters of the PID controller.

[0046] Compared with existing technologies, this solution solves the problems of traditional coating control methods, such as single control variables, low control efficiency, and poor performance. By real-time monitoring and acquisition of relevant parameters of the electron gun and ion source, and dynamic evaluation of the acquired parameters, accurate control parameters are continuously generated, providing timely and efficient adjustment reference data for the next step of control.

[0047] Through the above technical solution, this invention effectively improves control precision and real-time control, ensuring continuous and stable system operation. It monitors the working status of the electron gun and ion source from multiple dimensions, quantitatively establishes the working condition relationship between the electron gun and ion source, coordinates the control of the coating process, and real-time adjusts to reduce interference from the ion source on the electron gun, thereby improving the stability of evaporation rate control.

[0048] As one possible implementation, the feedforward compensation increment is obtained through the following method: Based on the ion beam current, ion energy, and calibrated coupling coefficient, the perturbation value of the ion source on the electron gun is obtained through the coupling equation. Configure the feedforward gain, and multiply the disturbance value by the feedforward gain to obtain the feedforward compensation increment.

[0049] Among them, the feedforward compensation increment refers to detecting the interference signal in advance and calculating the compensation amount, which is then superimposed on the output of the main controller to cancel the disturbance.

[0050] The coupling coefficient is a measure of the mutual dependence of two entities, and it is a dimensionless parameter.

[0051] As an example, the calculation process for the feedforward compensation increment is as follows: (1) For real-time perturbation calculation, based on the real-time acquisition data of the Faraday cup and energy analyzer, the ion beam current and ion energy are obtained respectively. Combined with the calibrated coupling coefficient, the perturbation value is calculated through the coupling equation: in, Here, k represents the real-time disturbance value, and k is the coupling coefficient. Ion beam current monitored by Faraday cup The ion energy monitored by the energy analyzer; (2) Generate feedforward compensation increment, and convert the disturbance value Multiply by the feedforward gain to convert to electron beam compensation. Increment: Where G is the feedforward gain, which is calibrated by the electron gun response experiment; This is the compensation increment for the electron beam current; (3) Dynamically correct the electron gun setting value, add the feedforward compensation increment to the original electron gun beam value, and generate the corrected setting value command: in, For the corrected electron gun beam, Set the original beam current value; Specifically, during the operation of the coating system, when the coating status is evaluated as not meeting the coating standards, a feedforward compensation mechanism is triggered to suppress the interference of ion bombardment on the evaporation rate.

[0052] The feedforward compensation increment is obtained by multiplying the perturbation value by the feedforward gain, where the feedforward gain is a set coefficient, and the perturbation value is calculated by the coupling equation. The real-time parameters used in the calculation are the ion beam current, ion energy, and coupling coefficient. The ion beam current is obtained by Faraday cup monitoring, the ion energy is obtained by energy analyzer detection, and the coupling coefficient is dynamically corrected by the recursive least squares method based on the relevant parameters of the ion source.

[0053] Compared with existing technologies, this scheme uses feedforward compensation to dynamically correct the electron gun beam current value, reducing the interference of ion bombardment on the electron gun, ensuring the working state of the electron gun, and guaranteeing the stability of the evaporation rate.

[0054] Through the above technical solution, the present invention quantifies the feedforward compensation increment and superimposes the feedforward compensation increment with the initial value of the electron beam to suppress the disturbance of the electron gun by the ion source bombardment, thereby stabilizing the working state of the electron gun and stabilizing the evaporation rate.

[0055] As one possible implementation, real-time correction of the coupling coefficient includes: Configure the deviation threshold for the evaporation rate; Determine whether the actual deviation of the evaporation rate is greater than or equal to the deviation threshold; if not, do not correct the coupling coefficient; if so, correct the coupling coefficient by recursive least squares method and pass the corrected coupling coefficient to the coupling equation.

[0056] Among them, the threshold refers to the lowest or highest value that an effect can produce, i.e., the critical value, which is the allowable error range when the system is within acceptable limits; the deviation threshold refers to the deviation of the actual value from the threshold, measuring the degree of deviation between the actual value and the allowable error. As an example, when the ion source parameters are stable and the evaporation rate deviation exceeds the threshold, real-time identification is initiated, and the k value is dynamically corrected using the recursive least squares method.

[0057] Specifically, when the coating system allows, the evaporation rate parameter is collected through the multi-source data sensing module. The collected value is subtracted from the standard value. When the difference exceeds the deviation threshold, the feedforward compensation mechanism is executed to revise the coupling coefficient in real time. The corrected coupling coefficient is then passed to the coupling equation, and the corrected electron gun beam correction value is finally calculated.

[0058] Compared with existing technologies, this solution monitors the allowable conditions of the coating system in real time, updates the coupling coefficient in a timely manner, and further corrects the electron gun beam execution value in real time by correcting the coupling coefficient, dynamically generating the electron gun and ion source control target commands for the next cycle, so as to achieve the purpose of global process control through the feedforward compensation mechanism.

[0059] Through the above technical solution, this application can optimize and correct the coupling coefficient in real time, achieve efficient control of the electron gun beam, enhance evaporation stability, and improve coating quality.

[0060] As a possible implementation, the coupling coefficient is corrected using the recursive least squares method, specifically: the corrected coupling coefficient is denoted as... The coupling coefficient before correction is denoted as The corrected coupling coefficients are obtained as follows: : in, , The ion beam current at the current moment. The ion energy at the current moment; This represents the error in the disturbance value; Forgetting factor; Let be the covariance matrix of the recursive least squares method from the previous time step.

[0061] Among them, recursive least squares is an online parameter estimation method that updates model parameters recursively and is suitable for dynamic system identification and real-time data processing.

[0062] Specifically, the coating system uses the recursive least squares method to update the coupling coefficient online, which makes the parameter matching between the electron gun and the ion source more accurate and improves the stability of the evaporation rate.

[0063] Through the above technical solution, this invention solves the problem of excessive evaporation rate fluctuations caused by coupling in traditional methods. By updating the coupling coefficient online, the evaporation rate can be controlled in real time, resulting in a higher parameter matching degree between the electron gun and the ion source, and a more stable operation of the coating system.

[0064] As one possible implementation, the feedforward gain is denoted as... The parameters of the molten pool at the evaporation source are adaptively adjusted as follows: in, This is the adaptively adjusted feedforward gain; Based on the feedforward gain; The melting area; This is the baseline value for the molten pool area of ​​the evaporation source; The viscosity coefficient of the molten pool from the evaporation source; Parameters for adjusting the influence of the molten pool state of the evaporation source on the feedforward gain; This is the influence coefficient of the evaporation source molten pool state.

[0065] Among them, the evaporation source molten pool state parameters refer to the temperature distribution and melting area of ​​the evaporation source molten pool.

[0066] Specifically, the coating system monitors and collects relevant parameters of the evaporation source molten pool in real time, and adjusts the gain coefficient in real time to achieve adaptive gain for the coating system's operating conditions.

[0067] Through the above technical solution, this solution solves the problem of insufficient ability of traditional methods to adjust the system operating conditions. By updating the feedforward gain in real time, the system operating conditions can be adaptively adjusted, resulting in a higher parameter matching degree between the electron gun and the ion source, and a more stable operation of the coating system.

[0068] In a second aspect, the present invention provides a method for co-evaporation deposition of electron gun and ion source, comprising the following steps: using a co-evaporation deposition control method of electron gun and ion source to control the electron gun execution module and the ion source execution module to perform thin film deposition; During the thin film deposition process, a film thickness compensation mechanism is used to compensate for local hot spots and global uniformity.

[0069] Among them, the film thickness compensation mechanism refers to the technology used to offset processing errors. Its core lies in correcting the thickness deviation caused by factors such as material characteristics and process fluctuations through a combination of hardware and software.

[0070] Among them, local hot spot compensation refers to eliminating the temperature gradient on the surface of the evaporating material by dynamically adjusting the electron beam focus (accuracy ±2%), and reducing the splashing phenomenon by combining the groove design of the ingot-shaped evaporating material.

[0071] Among them, global uniformity compensation refers to using a scanning optical probe to monitor the film thickness (repeatability <3nm) and combining it with planetary rotation of the substrate (adjustable speed range 5-60rpm) to achieve a thickness deviation of <1%.

[0072] Specifically, when the coating system is used for coating, a high-precision thin film preparation is achieved by using a synergistic evaporation coating method with electron gun and ion source, combined with physical vapor deposition (PVD) technology. The core of this method is to achieve precise control of the thin film through the synergistic effect of electron beam evaporation and ion beam assistance.

[0073] The electron gun, as the core component, emits electrons through a hot cathode (such as a tungsten filament), which are accelerated by a high-voltage electric field and bombard the target material, causing the material to heat up to an evaporation state instantly. The ion source (such as a gallium liquid metal ion gun) provides auxiliary bombardment during the deposition process, generating plasma through ionized gas (such as nitrogen) to improve the density and adhesion of the thin film.

[0074] During the coating process, a film thickness compensation mechanism is adopted. The average film thickness deviation is corrected by dynamically adjusting the ion source gas flow rate through the PID controller, and the electron gun scanning speed is optimized by dynamically adjusting the proportional controller to improve film thickness uniformity. A panoramic view of the process status is constructed through a multi-source sensor network. Combined with the independently operating electron gun / ion source PID control loop and dynamic decoupling module, a closed-loop optimization architecture is formed to shorten the response time to process disturbances and ultimately meet the process stability requirements of high-precision coating equipment.

[0075] Compared to existing technologies, the electron gun and ion source synergistic evaporation deposition method for controlling the deposition system allows for a denser microcrystalline arrangement in the thin film, increasing density by over 30% and enhancing adhesion. The electron beam current is adjusted via a dynamic compensation mechanism, ensuring film thickness deviation is less than 1%. This thickness compensation mechanism allows for dynamic adjustment of the electron beam focus (accuracy ±2%) and substrate rotation speed, resolving localized hotspot issues. Furthermore, the electron gun and ion source parameters can be independently controlled, achieving precise matching between evaporation rate and ion bombardment.

[0076] Through the above technical solutions, this invention eliminates the rate interference of ion bombardment on the evaporation process in real time through a dynamic decoupling control mechanism. Combined with a panoramic perception and closed-loop optimization strategy based on multi-source data fusion, it improves the stability of the coating process and the quality of the film. It uses a feedforward compensation algorithm to dynamically correct the disturbance of the evaporation rate by the ion source, and combines the recursive least squares method to optimize the coupling coefficient and the adaptive gain under operating conditions online, thereby improving the parameter matching accuracy between the electron gun and the ion source and solving the evaporation rate fluctuation caused by coupling in traditional methods. Based on real-time monitoring of film thickness distribution using a scanning optical probe, a hierarchical control-global level strategy is adopted to dynamically adjust the ion source gas flow rate through a PID controller to correct the average film thickness deviation. At the local level, a proportional controller dynamically optimizes the electron gun scanning speed, thus optimizing the film thickness uniformity. A panoramic view of the process status is constructed through a multi-source sensor network. Combined with independently operating electron gun / ion source PID control loops and a dynamic decoupling module, a closed-loop optimization architecture is formed, shortening the response time to process disturbances and ultimately meeting the process stability requirements of high-precision coating equipment.

[0077] As one possible implementation method, local hotspot compensation specifically involves: acquiring the surface film thickness distribution, comparing it with the target uniformity to generate a regional deviation matrix, denoted as... ; the substrate surface Local film thickness deviation at location and velocity compensation ratio Multiplying these together yields the local speed adjustment command for the electron gun scanning motor. The electron gun scanning motor is adjusted according to local speed commands. Perform the task and complete the local hotspot compensation.

[0078] Among them, local hot spot compensation refers to eliminating the temperature gradient on the surface of the evaporating material by dynamically adjusting the electron beam focus (accuracy ±2%), and reducing the splashing phenomenon by combining the groove design of the ingot-shaped evaporating material.

[0079] The deviation matrix, in the thin film deposition process, is a key data point used to quantify the difference between the film thickness distribution on the substrate surface and the target uniformity. As an example, the local speed adjustment command is: K v The proportionality coefficient between local film thickness deviation and velocity compensation is obtained through experimental calibration (e.g., the velocity change ratio corresponding to a unit deviation).

[0080] Specifically, the deviation matrix directly reflects the defect distribution of deposition uniformity by quantifying the difference between the actual film thickness and the target thickness at various locations on the substrate surface. Its generation relies on high-precision measurement techniques (such as scanning optical probes, ellipsometrists, and X-ray reflection methods) and constructs continuous two-dimensional data through interpolation algorithms. This matrix provides the basis for dynamic compensation, achieving local film thickness correction by adjusting the scanning motor speed (Δv(x,y) = Kv·Δd(x,y)). As an example, when a positive deviation occurs (film thickness is too thick), the electron gun scanning speed is reduced; when a negative deviation occurs (film thickness is insufficient), the electron gun scanning speed is increased, thus achieving dynamic compensation.

[0081] Through the above technical solution, this invention can achieve closed-loop control of high-precision thin film deposition by quantitative analysis of the deviation matrix, improving uniformity to the nanometer level.

[0082] As one possible implementation method, global uniformity compensation specifically involves comparing the real-time film thickness with the target film thickness to obtain the instantaneous deviation of all monitoring points, and averaging the instantaneous deviations of all points to obtain the global average deviation. ; Calculate the compensation command for the output ion source gas flow valve The calculation method is as follows: in, The gain parameter of the ion source PID controller is used to quickly respond to deviations; This is the gain parameter of the ion source PID controller, used to eliminate steady-state error.

[0083] Among them, global uniformity compensation refers to using a scanning optical probe to monitor the film thickness (repeatability <3nm) and combining it with planetary rotation of the substrate (adjustable speed range 5-60rpm) to achieve a thickness deviation of <1%.

[0084] Specifically, by monitoring the film thickness distribution in real time (e.g., using scanning optical probes, ellipsometrists, sensor feedback), the system can dynamically adjust parameters such as substrate rotation rate, gas flow rate, or RF power. As an example, when a thinner film is detected in an edge region, the deposition time or gas flow rate in that region can be increased to make the thickness distribution more uniform.

[0085] Through the above technical solution, this invention systematically solves the thickness deviation problem in the deposition process by real-time monitoring, dynamic control, and algorithmic collaboration, effectively improving film quality, reducing costs, and expanding the process.

[0086] Thirdly, the present invention provides a control system for the coordinated evaporation and coating of an electron gun and an ion source, comprising: The multi-source data sensing module is used to collect evaporation rate, ion energy, ion beam current and evaporation source molten pool state parameters; The data processing module processes multi-source data into standardized data; The coating condition assessment module evaluates the stability of the evaporation rate based on the moving average and moving standard deviation of the evaporation rate. The evaporation source molten pool condition parameters specifically include temperature distribution and melt area, which are used to assess the molten state of the evaporation source molten pool. The module also assesses the severity of ion bombardment disturbance based on ion energy and ion beam current. Furthermore, the module is equipped with coating process indicators, including evaporation rate stability indicators, molten state indicators of the evaporation source molten pool, and indicators of the severity of ion bombardment disturbance. By comparing the assessment results with the corresponding coating process indicators, a coating condition diagnosis result is obtained. The decision control module dynamically generates the initial values ​​of the electron gun beam and the ion source gas flow rate based on the status diagnosis results. The dynamic decoupling module superimposes the feedforward compensation increment onto the initial value of the electron gun beam to obtain the electron gun beam correction value; wherein, the feedforward compensation increment is the product of the feedforward gain, coupling coefficient, ion energy and ion beam current; the electron gun beam correction value serves as the input setting value of the electron gun control module; The electron gun control module simultaneously receives the output beam adjustment amount and superimposes the output beam adjustment amount with the electron gun beam correction value to obtain the electron gun beam execution value; wherein, the output beam adjustment amount is the difference between the measured evaporation rate and the preset evaporation rate; The ion source control module uses the initial value of the ion source gas flow rate as the input setpoint to control the ion source execution module. The execution module includes an electron gun execution module and an ion source execution module.

[0087] Among them, the multi-source data sensing module is an intelligent system module that integrates multiple sensor technologies to realize the collection and fusion of multi-dimensional environmental information. Its core function is to improve the comprehensiveness and accuracy of data collection through the collaborative work of heterogeneous sensors. As an example, a quartz crystal microbalance can be used to collect evaporation rate parameters, a Faraday cup can be used to collect ion beam current, an energy analyzer can be used to collect ion energy, and a scanning optical probe can be used to collect the film thickness on the substrate surface.

[0088] The data processing module is crucial for ensuring the precision and stability of the coating process. Its design requires the integration of real-time data acquisition, intelligent algorithms, and multi-source collaborative control technologies. As an example, the data processing module can acquire the necessary parameters through an ARM embedded module (such as the S3C2440 processor) and utilize the Linux kernel's driver layer to achieve data standardization.

[0089] The coating status assessment module is a core functional unit for ensuring the quality of the coating process, and its design needs to integrate multi-dimensional detection technology and intelligent analysis algorithms. As an example, the coating status assessment module can integrate multi-source sensor data through an ARM embedded module (such as the S3C2440 processor), and the Linux kernel driver layer can achieve real-time processing.

[0090] The decision control module is the core hub in an intelligent system, responsible for realizing the process from environmental perception to action execution. As an example, the decision control module can employ algorithms such as PID control and fuzzy logic.

[0091] The dynamic decoupling module is mainly used to eliminate multi-physics coupling interference and improve the stability and accuracy of the coating process.

[0092] The electron gun control module is the core component of the coating system, encompassing the entire process of electron beam emission, acceleration, focusing, and deflection. As an example, the electron emission level can be modulated by negative pressure at the control electrode (Wehnelt cylinder), combined with a PID algorithm to achieve precise beam current control of 0.1-1 A, with an evaporation rate reaching 20 Å / s.

[0093] The ion source control module is the core unit for plasma generation and beam modulation, and its technical implementation involves high-voltage power supply management, real-time control algorithms, and multi-system coordination. As an example, the EPICS architecture, combined with a PLC and a serial server, can achieve layered control of the high-current ion source, vacuum system, and cooling system. The execution module includes an electron gun execution module and an ion source execution module. As an example, the electron gun execution module can use a tungsten filament or barium oxide cathode, and control the filament heating current (accuracy ±0.1A) through a PID algorithm at 6.67 × 10⁻⁶. -2 Thermionic electrons are generated in a vacuum environment and accelerated to 2 / 3 of the speed of light by a high-voltage electric field. The ion source execution module can drive gas ionization via a radio frequency power supply (2-60MHz), and the matching circuit dynamically adjusts the impedance (response time <10μs). The primary focusing system uses a cylindrical lens or a membrane-aperture lens, combined with a segmented accelerating tube (electrode length 20-30mm), to achieve a uniform electric field distribution, with ion energy control accuracy of ±0.01keV.

[0094] Specifically, a multi-source data sensing module collects raw data in real time. In this embodiment, a quartz crystal microbalance is used to collect the evaporation rate, a Faraday cup to collect the ion beam current, an energy analyzer to collect the ion energy, and a scanning optical probe to collect parameters such as the molten pool area of ​​the evaporation source. After converting each parameter into standard data, the coating status evaluation module uses a configured algorithm to evaluate the coating status parameters, such as the film thickness uniformity. When the film thickness deviation exceeds the error threshold, the decision control module is activated to generate the initial values ​​of the electron gun beam current and the ion source gas flow rate based on the diagnostic results. Simultaneously, the dynamic decoupling module calculates the feedforward compensation increment based on the configured algorithm, the real-time corrected feedforward gain, and the coupling coefficient. This increment is then superimposed on the initial electron gun beam value to obtain the electron gun beam correction value. Furthermore, the difference between the collected evaporation value and the measured evaporation value is used to generate a beam adjustment output to the electron gun control module. The electron gun control module then superimposes the beam output adjustment amount with the electron gun beam correction value to obtain the electron gun beam execution value. This value is ultimately transmitted to the electron gun execution module to adjust the electron gun beam value in real time, thereby reducing the interference caused by ion source bombardment on the electron gun and ensuring the stability of the coating system.

[0095] Specifically, the coating status is evaluated in real time based on the data acquisition and analysis results. When the coating status does not meet the coating process requirements, the initial value of the electron gun beam current and the initial value of the ion source gas flow rate are generated according to the preset coating process requirements and the real-time acquired data. The initial value of the electron gun beam current is corrected by feedforward compensation increment to obtain the electron gun beam current correction value. This value is further superimposed with the output beam current adjustment amount to obtain the electron gun beam current execution value.

[0096] The output beam adjustment amount is the difference between the evaporation rate collected by the quartz crystal microbalance and the preset evaporation rate. The feedforward compensation increment is obtained by multiplying the disturbance value by the feedforward gain; the disturbance value is output by the dynamic decoupling module, and the feedforward gain is adaptively adjusted by the state of the evaporation source molten pool. Specifically, it is calculated by formula based on the state parameters of the evaporation source molten pool (molten pool area, melting area, and melt viscosity coefficient in the molten pool) and preset parameter values.

[0097] The perturbation value is obtained by multiplying the ion beam data collected by the Faraday cup, the ion energy collected by the energy analyzer, and the decoupling coefficient. The decoupling coefficient is updated in real time according to the change of the evaporation rate. Specifically, it is calculated by recursive least squares method based on parameters such as the ion beam current, ion energy, and perturbation error at the current moment.

[0098] Compared with existing technologies, this solution solves the technical problems of low film adhesion and difficulty in controlling film uniformity in traditional coating control methods by using a collaborative evaporation coating of electron gun and ion source. It establishes a real-time panoramic perception of the process status through multi-source sensor data, employs feedforward compensation increments to mitigate the interference of ion bombardment on the electron gun evaporation coating process, and collaboratively optimizes the parameter matching of the electron gun and ion source to achieve the process objectives.

[0099] By employing the aforementioned technical solution, combined with the core electron gun and ion source co-evaporation coating control method, this invention effectively reduces the interference of the ion source on the electron gun, improving film thickness uniformity, film density, and adhesion. Through the co-control of the electron gun and ion source, film adhesion and density are enhanced, the coating evaporation rate is increased, and film thickness uniformity is optimized. Furthermore, by compensating for gain, the interference of the ion source on the electron gun is effectively reduced, improving system heating efficiency, decreasing evaporation rate fluctuations, and lowering the system's control complexity.

[0100] Example 1 like Figure 1 , Figure 2 As shown, the multi-source data sensing module collects raw data in real time, such as evaporation rate, ion energy, ion beam current, and the state of the evaporation source molten pool, and transmits the raw sensing data to the data processing module. The data processing module preprocesses the multi-source data and outputs standardized data to the state assessment module; the state assessment module evaluates the process state based on fuzzy logic algorithms, such as evaporation stability, temperature distribution, and film thickness distribution, and outputs the state diagnosis results to the decision control module; the decision control module receives the state assessment structure, generates control target commands, outputs the electron gun beam current value to the dynamic decoupling module, and outputs the ion source gas flow rate to the ion source control module; the dynamic decoupling module eliminates the interference of the ion source on the evaporation rate through feedforward compensation, optimizes the coupling coefficient and adaptive gain in real time, and outputs the optimized electron gun correction commands to the electron gun control module; the electron gun module... The module receives the evaporation rate from the multi-source data sensing module and compares it with the target rate, outputting a beam current adjustment value. It also receives the electron gun beam current value from the dynamic decoupling module, superimposes the beam current adjustment value with the electron gun beam current value, and outputs the final electron gun beam current value. The ion source module independently executes PID closed-loop control, receiving decision commands as setpoints and outputting execution signals to the actuators. The feedback compensation module receives process feedback, such as film thickness distribution. For global control, it uses PID control to adjust the ion source gas flow rate and correct the average film thickness deviation. For local compensation, it uses proportional control to adjust the electron gun scanning speed for areas with insufficient film thickness. It outputs a compensation signal to the state assessment module for state diagnosis and updates, and outputs correction commands to the decision control module to optimize the target for the next cycle.

[0101] Specifically, such as Figure 3As shown, a dynamic decoupling control algorithm is used to suppress the interference of ion bombardment on the evaporation rate through feedforward compensation. The specific implementation process is as follows: For real-time perturbation calculation, based on real-time data from the Faraday cup and energy analyzer, and combined with calibrated coupling coefficients, the following coupling equations are used: in, For real-time perturbations, k is the coupling coefficient. Ion beam current monitored by Faraday cup The ion energy monitored by the energy analyzer; Generate feedforward compensation amount, and convert the disturbance value Multiply by the feedforward gain to convert into a compensation increment for the electron beam: Where G is the feedforward gain, which is calibrated by the electron gun response experiment; This is the compensation increment for the electron beam current; The electron gun setting is dynamically corrected, and the compensation amount is added to the original beam setting to generate the corrected setting command. in, For the corrected electron gun beam, Set the original beam current value; Perform closed-loop control and modify the results. As the input setpoint for the electron gun PID controller, the PID controller simultaneously receives the evaporation feedback signal measured by the quartz crystal microbalance, compares it with the target evaporation rate, and outputs the beam current adjustment amount. The final execution command is: in, The electron gun ultimately controls the beam; For output beam current adjustment; Specifically, dynamic optimization of feedforward compensation is achieved through online identification, and the specific implementation process is as follows: Real-time identification is initiated when the ion source parameters are stable and the evaporation rate deviation exceeds a threshold. A recursive minimum... Least squares dynamic correction of k value: in, , The ion beam current monitored at the current time t. The ion energy is the value monitored at the current time t. For model prediction error, The forgetting factor is 0.95-0.99. Let be the covariance matrix of the previous time step. The coupling coefficient at the previous time step; Feedforward compensation The operating condition is adaptive, and the feedforward gain G is adjusted in real time according to the state of the molten pool of the evaporation source: in, This is the adaptively adjusted feedforward gain. Based on the feedforward gain, To monitor the molten pool area of ​​the evaporation source using an infrared thermal imager, The viscosity coefficient is obtained by looking up a table based on the molten pool temperature of the evaporation source; The coefficient representing the influence of the evaporation source molten pool state. The parameter is used to adjust the degree to which the state of the molten pool affects the feedforward gain.

[0102] like Figure 1 As shown, a film thickness compensation mechanism is implemented through decision-making. Real-time acquisition of film thickness distribution on substrate surface using a scanning optical probe. , with target uniformity Compare and generate the region deviation matrix Then, a hierarchical control strategy is initiated. Global uniformity is achieved using a PI controller, which calculates the output compensation signal based on the global average deviation. in, This is the gain parameter of the PI controller, used for rapid response to deviations; This is the gain parameter of the PI controller, used to eliminate steady-state error; This is to provide compensation commands to the ion source gas flow valve. The average deviation over the entire region; The ion source gas flow valve is dynamically adjusted to modify the overall deposition rate by changing the plasma density. Simultaneously, a proportional controller is used to generate position-dependent compensation values ​​for local hotspots. in, This is to output local speed adjustment commands to the electron gun scanning motor; Location of substrate surface Local film thickness deviation at the location; This is the speed compensation ratio coefficient.

[0103] The electron gun scanning motor is used to adjust the local scanning speed, reducing the speed in areas with insufficient film thickness to extend the deposition time. Global gas flow compensation and local scanning path correction are calculated independently to avoid interference.

[0104] Although the invention has been described herein in conjunction with various embodiments, those skilled in the art will understand and implement other variations of the disclosed embodiments by reviewing the accompanying drawings, disclosure, and other materials. In this specification, the word "comprising" does not exclude other components or steps, and "a" or "an" does not exclude multiple components. A single processor or other unit can implement several functions listed in the specification. While certain measures are described in different embodiments, this does not mean that these measures cannot be combined to produce good results.

[0105] Although the invention has been described in conjunction with specific features and embodiments, it is obvious that various modifications and combinations can be made therein without departing from the spirit and scope of the invention. Accordingly, this specification and drawings are merely illustrative of the invention and are considered to cover any and all modifications, variations, combinations, or equivalents within the scope of the invention. Clearly, those skilled in the art can make various alterations and modifications to the invention without departing from its spirit and scope. Thus, if such modifications and modifications fall within the scope of the invention and its equivalents, the invention is also intended to include such modifications and modifications.

Claims

1. A method for controlling the synergistic evaporation deposition of an electron gun and an ion source, characterized in that, Includes the following steps: Dynamically generate initial values ​​for electron gun beam current and ion source gas flow rate; The feedforward compensation increment is superimposed on the initial value of the electron gun beam to obtain the electron gun beam correction value; wherein, the feedforward compensation increment is the product of the feedforward gain, coupling coefficient, ion energy and ion beam current; the electron gun beam correction value is used as the input setpoint of the electron gun PID controller. The electron gun PID controller simultaneously receives the output beam current adjustment amount and superimposes the output beam current adjustment amount with the electron gun beam current correction value to obtain the electron gun beam current execution value; wherein, the output beam current adjustment amount is the difference between the measured evaporation rate and the preset evaporation rate; The initial value of the ion source gas flow rate is used as the input setpoint for the ion source PID controller to control the ion source execution module.

2. The method for controlling the synergistic evaporation coating of electron gun and ion source according to claim 1, characterized in that, The initial values ​​of the electron gun beam current and the ion source gas flow rate are dynamically generated, specifically including: Data acquisition specifically includes collecting evaporation rate, ion energy, ion beam current, and molten pool state parameters of the evaporation source; The coating condition assessment specifically includes: evaluating the stability of the evaporation rate based on the moving average and moving standard deviation of the evaporation rate; assessing the melting state of the evaporation source molten pool based on the temperature distribution and melting area; evaluating the severity of ion bombardment disturbance based on ion energy and ion beam current; configuring coating process indicators, specifically including evaporation rate stability indicators, melting state indicators of the evaporation source molten pool, and indicators of the severity of ion bombardment disturbance; comparing the assessment results with the corresponding coating process indicators to obtain the coating condition diagnosis results. The initial values ​​of the electron gun beam and the ion source gas flow rate are dynamically generated based on the status diagnosis results.

3. The method for controlling the synergistic evaporation coating of electron gun and ion source according to claim 1, characterized in that, The feedforward compensation increment is obtained through the following method: Based on the ion beam current, ion energy, and calibrated coupling coefficient, the perturbation value of the ion source on the electron gun is obtained through the coupling equation. Configure the feedforward gain, and multiply the disturbance value by the feedforward gain to obtain the feedforward compensation increment.

4. The method for controlling the synergistic evaporation coating of electron gun and ion source according to claim 3, characterized in that, Real-time correction of coupling coefficients, specifically including: Configure the deviation threshold for the evaporation rate; Determine whether the actual deviation of the evaporation rate is greater than or equal to the deviation threshold; if not, do not correct the coupling coefficient; if so, correct the coupling coefficient by recursive least squares method and pass the corrected coupling coefficient to the coupling equation.

5. The method for controlling the synergistic evaporation coating of electron gun and ion source according to claim 4, characterized in that, The coupling coefficient is corrected using the recursive least squares method, specifically as follows: the corrected coupling coefficient is denoted as... The coupling coefficient before correction is denoted as The corrected coupling coefficients are obtained as follows: : in, , The ion beam current at the current moment. The ion energy at the current moment; This represents the error in the disturbance value; Forgetting factor; Let be the covariance matrix of the recursive least squares method from the previous time step.

6. The method for controlling the synergistic evaporation coating of electron gun and ion source according to claim 1, characterized in that, Feedforward gain is denoted as The parameters of the molten pool at the evaporation source are adaptively adjusted as follows: in, This is the adaptively adjusted feedforward gain; Based on the feedforward gain; The melting area; This is the baseline value for the molten pool area of ​​the evaporation source; The viscosity coefficient of the molten pool from the evaporation source; Parameters for adjusting the influence of the molten pool state of the evaporation source on the feedforward gain; This is the influence coefficient of the evaporation source molten pool state.

7. A method for synergistic evaporation deposition of an electron gun and an ion source, characterized in that, Includes the following steps: The electron gun and ion source co-evaporation deposition control method according to any one of claims 1 to 6 is used to control the electron gun execution module and the ion source execution module to perform thin film deposition. During the thin film deposition process, a film thickness compensation mechanism is used to compensate for local hot spots and global uniformity.

8. The method for synergistic evaporation coating of electron gun and ion source according to claim 7, characterized in that, Local hotspot compensation specifically involves: collecting the surface film thickness distribution, comparing it with the target uniformity to generate a regional deviation matrix, denoted as... ; the substrate surface Local film thickness deviation at location and velocity compensation ratio Multiplying these together yields the local speed adjustment command for the electron gun scanning motor. The electron gun scanning motor is adjusted according to local speed commands. Perform the task and complete the local hotspot compensation.

9. The method for synergistic evaporation coating of electron gun and ion source according to claim 7, characterized in that, Global uniformity compensation specifically involves comparing the real-time film thickness with the target film thickness to obtain the instantaneous deviation of all monitoring points, and then averaging the instantaneous deviations of all points to obtain the global average deviation. ; Calculate the compensation command for the output ion source gas flow valve The calculation method is as follows: in, The gain parameter of the ion source PID controller is used to quickly respond to deviations; This is the gain parameter of the ion source PID controller, used to eliminate steady-state error.

10. A control system for the coordinated evaporation and deposition of an electron gun and an ion source, characterized in that, include: The multi-source data sensing module is used to collect evaporation rate, ion energy, ion beam current and evaporation source molten pool state parameters; The data processing module processes multi-source data into standardized data; The coating condition assessment module evaluates the stability of the evaporation rate based on the moving average and moving standard deviation of the evaporation rate. The evaporation source molten pool condition parameters specifically include temperature distribution and melt area, which are used to assess the molten state of the evaporation source molten pool. The module also assesses the severity of ion bombardment disturbance based on ion energy and ion beam current. Furthermore, the module is equipped with coating process indicators, including evaporation rate stability indicators, molten state indicators of the evaporation source molten pool, and indicators of the severity of ion bombardment disturbance. By comparing the assessment results with the corresponding coating process indicators, a coating condition diagnosis result is obtained. The decision control module dynamically generates the initial values ​​of the electron gun beam and the ion source gas flow rate based on the status diagnosis results. The dynamic decoupling module superimposes the feedforward compensation increment onto the initial value of the electron gun beam to obtain the electron gun beam correction value; wherein, the feedforward compensation increment is the product of the feedforward gain, coupling coefficient, ion energy and ion beam current; the electron gun beam correction value serves as the input setting value of the electron gun control module; The electron gun control module simultaneously receives the output beam adjustment amount and superimposes the output beam adjustment amount with the electron gun beam correction value to obtain the electron gun beam execution value; wherein, the output beam adjustment amount is the difference between the measured evaporation rate and the preset evaporation rate; The ion source control module uses the initial value of the ion source gas flow rate as the input setpoint to control the ion source execution module. The execution module includes an electron gun execution module and an ion source execution module.

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