Wide-temperature-range perovskite optical storage material and preparation method and application thereof

Abstract

The invention discloses a wide-temperature-range perovskite optical storage material and a preparation method and application thereof, the chemical general formula of the wide-temperature-range perovskite optical storage material is CsCdCl3: xSb < 3 + >, yMn < + >, Mn < + > is Zr < 4 + >, Sn < 2 + >, Hf < 4 + > or Gd < 3 + >, x is more than 0 and less than 0.06, and y is more than 0 and less than 0.02. The perovskite crystal can generate free carriers under excitation of X-rays or 365-nanometer ultraviolet light, the carriers can be stored in a crystal defect trap, and the storage temperature of the carriers covers an ultra-wide temperature range from 100 K to 350 K, so that wide-temperature-range X-ray imaging, information storage and anti-counterfeiting application can be realized.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of luminescent materials, and particularly relates to a wide-temperature-range perovskite material CsCdCl3:Sb 3+ ,M n+ , a preparation method thereof and application thereof as an X-ray optical storage material. BACKGROUND

[0002] The working principle of the X-ray optical storage material is based on its photoelectric property. When the material is irradiated by X-rays, high-energy photons cause the inner-shell electrons of atoms inside the material to be ionized by the photoelectric effect and be completely knocked out of the atoms to generate free carriers (photoelectrons and holes). The carriers migrate in the material, and part of them are captured by crystal defect traps, thereby storing X-ray energy in the form of electric charges. When reading information, the captured carriers are released and recombined by a specific excitation, and an optical or electrical signal is output.

[0003] The currently commercially available X-ray optical storage material is BaFBr(I):Eu 2+ , which significantly decreases in performance at low temperatures (<300 K). This is because the decrease in temperature leads to a decrease in atomic thermal motion, and the efficiency of capturing carriers by crystal defect traps decreases significantly. At the same time, low temperature also severely reduces the carrier mobility, hindering the effective movement of the carriers to the trap positions. In addition, in BaFBr(I):Eu 2+ , there are few shallow trap centers corresponding to below 300 K. These factors together cause the carrier storage amount to decrease sharply at low temperatures, greatly limiting the application of the material in low-temperature operating fields (such as space exploration and polar research). Therefore, to break through the technical bottleneck of the prior art and meet the application requirements in extreme environments, it is crucial to develop a new type of material that has high stability and high storage efficiency in a wide temperature range (especially in the range of 100 K to 350 K).

[0004] In addition, the high-temperature solid-phase synthesis (>800 ℃) of the BaFBr(I):Eu 2+ material faces an irreconcilable contradiction. For example, high temperature can induce uncontrolled volatilization of the I component and lattice distortion, destroying the homogeneity of the Br - / I - solid solution. At the same time, high temperature can cause the reduction stability of Eu 2+ to deteriorate, which needs to rely on complex atmosphere protection. The harsh process conditions further cause particle coarsening, a sharp increase in energy consumption, and batch fluctuations. These high-temperature-dependent defects form a chain of worsening composition-structure-performance, which fundamentally restricts the optical storage efficiency of the material and the feasibility of industrial application. SUMMARY

[0005] The present application aims at overcoming the deficiencies of the prior art, and provides a wide-temperature-range perovskite light storage material and a preparation method thereof, so as to solve the problems of the limitations of traditional materials in the working temperature range and the synthesis process, and thus develop a high-performance light information storage material.

[0006] To achieve the above-mentioned object, the present application adopts the following technical solutions. One of the objects of the present application is to protect a wide-temperature-range perovskite light storage material, which has a chemical general formula of CsCdCl3:xSb 3+ ,yM n+ , wherein M n+ is Zr 4+ , Sn 2+ , Hf 4+ or Gd 3+ , and 0 < x < 0.06 and 0 < y < 0.02.

[0007] Further, the crystal structure thereof belongs to a hexagonal system, and the space group belongs to P63 / mmc.

[0008] The material can be excited by X-rays and 200-365 nm ultraviolet light to induce free carriers (electrons and holes), and these carriers can be temporarily stored in the traps of the defects of the material crystal; and the storage temperature covers a range from 100 K to 350 K.

[0009] The second object of the present application is to protect a synthesis method of the wide-temperature-range perovskite light storage material, which comprises the following steps. (1) The required cesium-containing compound, cadmium-containing compound, chlorine-containing compound, antimony-containing compound and metal element M-containing compound are weighed according to the stoichiometric ratio respectively; (2) The weighed compounds are fully mixed and uniformly placed in a metal reaction kettle for heat treatment, and then separated to collect the solid to obtain CsCdCl3:Sb 3+ ,M n+ wide-temperature-range perovskite crystal.

[0010] Further, the cesium-containing compound is at least one of cesium carbonate (Cs2CO3) and cesium chloride (CsCl).

[0011] Further, the cadmium-containing compound is at least one of cadmium carbonate (CdCO3) and cadmium chloride (CdCl2).

[0012] Further, the chlorine-containing compound is hydrogen chloride (HCl).

[0013] Further, the antimony-containing compound is at least one of antimony oxide (Sb2O3) and antimony chloride (SbCl3).

[0014] Further, the compound containing the metal element M is at least one of zirconium chloride (ZrCl4), stannous oxide (SnO), hafnium dioxide (HfO2), and gadolinium oxide (Gd2O3).

[0015] Further, the cesium-containing compound, the cadmium-containing compound, the antimony-containing compound, and the compound containing the metal element M in step (1) are weighed under the protection of an inert atmosphere such as nitrogen.

[0016] Further, the heat treatment in step (2) is rapidly increased from room temperature to 160-200 ℃ at a rate of 5 ℃ / min, and then slowly cooled to room temperature at a rate of 2-10 ℃ / h after being kept at 160-200 ℃ for 3-15 hours.

[0017] The third object of the present application is to protect the application of the wide-temperature-range perovskite material as an X-ray optical storage material.

[0018] Further, the material can be specifically used for X-ray imaging, information storage, or anti-counterfeiting.

[0019] The perovskite material of the present application has a Sb 3+ as a core of a thermally excited luminescence center. 3+ The luminescence of Sb 3 originates from the s→p transition of S0. 1 More importantly, the lone pair electron structure of Sb 3+ makes it have a strong electron trapping ability, so it can more deeply participate in the carrier trapping and recombination luminescence process. At the same time, the use of the co-doped ion M n+ not only introduces defects, but also forms a stable defect pair with Sb 3+ that matches the energy level, that is, a combination of “Sb 3+ and a specific regulating ion” is constructed, which can construct a high-efficiency and wide-temperature-range carrier storage-release system, which is crucial for actual information storage applications.

[0020] Compared with the prior art, the present application has the following advantages: 1. The CsCdCl3:Sb 3+ ,M n+ wide-temperature-range perovskite material of the present application can be effectively excited by X-rays or 200-365 nm ultraviolet light to induce free carriers (electrons and holes) and store them in material traps, so it can be used in the fields of X-ray radiography, information storage, or anti-counterfeiting.

[0021] 2. The CsCdCl3:Sb 3+ ,M n+In wide-temperature-range perovskite materials, free electrons and holes are stored in defect traps at temperatures ranging from 100 K to 350 K, making them suitable for wide-temperature-range X-ray imaging.

[0022] 3. The present invention CsCdCl3:Sb 3+ M n+ Wide-temperature-range perovskite materials exhibit high chemical stability and moisture resistance.

[0023] 4. Compared with the harsh process of synthesizing traditional optical storage materials at ultra-high temperature (>900 ℃) and in a reducing hydrogen atmosphere, the present invention can complete the preparation of materials under mild conditions of 160~220 ℃ by solvothermal method. It does not require atmosphere protection, the process conditions are more relaxed, the production cost is significantly reduced, and the industrial equipment used is technically mature and modular in structure, which is conducive to large-scale production. Therefore, it has good industrialization feasibility.

[0024] In summary, this invention starts from a completely new application objective (optical information storage) and selects an Sb with a unique "light emission-storage" dual function. 3+ Using ions as the core and supplemented by specific co-doped ions to precisely control the defect energy level, a perovskite optical storage material with excellent performance in the near-room temperature range was successfully prepared. Attached Figure Description

[0025] Figure 1 The X-ray diffraction patterns are those of the perovskite crystals synthesized in Examples 1-4.

[0026] Figure 2 CsCdCl3:0.04Sb 3+ Perovskite crystals and CsCdCl3:0.04Sb prepared in Example 4 3+ 0.01Gd 3+ Comparison of the emission spectrum (a) and thermoluminescence emission spectrum (b) of perovskite crystals.

[0027] Figure 3 CsCdCl3:0.04Sb 3+ Comparison of thermoluminescence curves of perovskite crystals and perovskite crystals synthesized in Examples 1-4 after X-ray excitation at 100 K.

[0028] Figure 4 The CsCdCl3:0.04Sb synthesized in Example 3 3+ 0.01Hf 4+ Afterglow curve decay diagram of perovskite crystal material after being excited by X-rays at 120 K for 400 seconds.

[0029] Figure 5The CsCdCl3:0.04Sb synthesized in Example 4 3+ 0.01Gd 3+ The relationship between the emission spectrum of perovskite crystal materials excited by X-rays at 100 K and the excitation time.

[0030] Figure 6 The CsCdCl3:0.04Sb synthesized in Example 4 3+ 0.01Gd 3+ Thermoluminescence emission spectrum of perovskite crystal material after being excited by X-rays at 100 K for 500 seconds.

[0031] Figure 7 The CsCdCl3:0.04Sb synthesized in Example 4 3+ 0.01Gd 3+ The absolute afterglow decay curve of perovskite crystal material at room temperature after being excited by 365 nm ultraviolet light for 300 seconds.

[0032] Figure 8 The CsCdCl3:0.04Sb synthesized in Example 4 3+ 0.01Gd 3+ A diagram illustrating the use of perovskite crystal materials in low-temperature X-ray imaging (radiography). Detailed Implementation

[0033] A wide-temperature-range perovskite optical storage material is synthesized by the following steps: (1) Under a nitrogen protective atmosphere, according to the general chemical formula CsCdCl3:xSb 3+ ,yM n+ The molar ratio of each element in the solution (Cs:Cd:Cl:Sb:M=1:1:3:x:y, where M) n+ Zr 4+ Sn 2+ Hf 4+ or Gd 3+ Weigh out the required cesium-containing compound, cadmium-containing compound, antimony-containing compound, and compound containing metal element M respectively (where 0 < x < 0.06, 0 < y < 0.02); and measure out the chlorine-containing compound in air atmosphere. (2) The weighed compound was thoroughly mixed and placed in a polytetrafluoroethylene liner, sealed, and then placed in a metal reactor. The temperature was rapidly increased from room temperature to 160-200 ℃ at a rate of 5 ℃ / min, and held for 3-15 hours. Then the temperature was slowly reduced to room temperature at a rate of 2-10 ℃ / hour. Finally, the solid was separated and collected to obtain the corresponding CsCdCl3:xSb. 3+ ,yM n+ Wide-temperature-range perovskite crystals.

[0034] Wherein, the cesium-containing compound is at least one of cesium carbonate (Cs2CO3) and cesium chloride (CsCl); the cadmium-containing compound is at least one of cadmium carbonate (CdCO3) and cadmium chloride (CdCl2); the chlorine-containing compound is hydrogen chloride (HCl); the antimony-containing compound is at least one of antimony oxide (Sb2O3) and antimony chloride (SbCl3); and the compound containing the metal element M is at least one of zirconium chloride (ZrCl4), stannous oxide (SnO), hafnium dioxide (HfO2), and gadolinium oxide (Gd2O3).

[0035] To make the content of this invention easier to understand, the technical solution of this invention will be further described below with reference to specific embodiments, but this invention is not limited thereto.

[0036] Unless otherwise specified, all raw materials, reagents, instruments and equipment used in this invention can be purchased from the market or prepared by existing methods.

[0037] Example 1 This embodiment provides a CsCdCl3:0.04Sb 3+ 0.01Zr 4+ The chemical synthesis steps for wide-temperature-range perovskite materials are as follows: Cesium carbonate (Cs₂CO₃), cadmium carbonate (CdCO₃), a 36% hydrochloric acid aqueous solution, antimony oxide (Sb₂O₃), and zirconium chloride (ZrCl₄) were used as raw materials. 0.46650 g of Cs₂CO₃, 0.50916 g of CdCO₃, 0.01739 g of Sb₂O₃, and 0.00695 g of ZrCl₄ were weighed out respectively. The weighed materials were placed in a 25 mL white polytetrafluoroethylene (PTFE) liner, and 10.44 mL of hydrochloric acid aqueous solution was added and mixed thoroughly. The PTFE liner was then sealed and placed in a metal reactor. The reactor temperature was increased from room temperature to 160 °C at a rate of 5 °C / min and maintained at this temperature for 10 hours. Finally, the temperature was slowly reduced to room temperature at a rate of 2 °C / hour. The crystals were then poured out from the polytetrafluoroethylene liner, carefully washed with ethanol, and dried under vacuum at 50 °C for 3 hours to obtain CsCdCl3:0.04Sb. 3+ 0.01Zr 4+ Perovskite crystal materials.

[0038] Example 2 This embodiment provides a CsCdCl3:0.04Sb 3+ 0.01Sn 2+ The chemical synthesis steps for wide-temperature-range perovskite materials are as follows: Cesium carbonate (Cs₂CO₃), cadmium carbonate (CdCO₃), a 36% hydrochloric acid aqueous solution, antimony oxide (Sb₂O₃), and stannous oxide (SnO) were used as raw materials. 0.46787 g of Cs₂CO₃, 0.51066 g of CdCO₃, 0.01744 g of Sb₂O₃, and 0.00403 g of SnO were weighed out respectively. The weighed materials were placed in a 25 mL white polytetrafluoroethylene (PTFE) liner, and 10.44 mL of hydrochloric acid aqueous solution was added and mixed thoroughly. The PTFE liner was then sealed and placed in a metal reactor. The reactor temperature was increased from room temperature to 180 °C at a rate of 5 °C / min, maintained at this temperature for 3 hours, and finally slowly cooled to room temperature at a rate of 4 °C / hour. The crystals were then poured out from the polytetrafluoroethylene liner, carefully washed with ethanol, and dried under vacuum at 50 °C for 3 hours to obtain CsCdCl3:0.04Sb. 3+ 0.01Sn 2+ Perovskite crystal materials.

[0039] Example 3 This embodiment provides a CsCdCl3:0.04Sb 3+ 0.01Hf 4+ The chemical synthesis steps for wide-temperature-range perovskite materials are as follows: Cesium carbonate (Cs₂CO₃), cadmium carbonate (CdCO₃), a 36% hydrochloric acid aqueous solution containing hydrogen chloride (HCl), antimony oxide (Sb₂O₃), and hafnium dioxide (HfO₂) were used as raw materials. 0.46681 g of Cs₂CO₃, 0.50950 g of CdCO₃, 0.01740 g of Sb₂O₃, and 0.00628 g of HfO₂ were weighed out respectively. The weighed materials were placed in a 25 mL white polytetrafluoroethylene (PTFE) liner, and 10.44 mL of hydrochloric acid aqueous solution was added and mixed thoroughly. The PTFE liner was then sealed and placed in a metal reactor. The reactor temperature was increased from room temperature to 190 °C at a rate of 5 °C / min and maintained at this temperature for 15 hours. Finally, the temperature was slowly reduced to room temperature at a rate of 10 °C / hour. The crystals were then poured out from the polytetrafluoroethylene liner, carefully washed with ethanol, and dried under vacuum at 50 °C for 3 hours to obtain CsCdCl3:0.04Sb. 3+ 0.01Hf 4+ Perovskite crystal materials.

[0040] Example 4 This embodiment provides a CsCdCl3:0.04Sb 3+ 0.01Gd 3+ The chemical synthesis steps for wide-temperature-range perovskite materials are as follows: Cesium carbonate (Cs₂CO₃), cadmium carbonate (CdCO₃), a 36% hydrochloric acid aqueous solution containing hydrogen chloride (HCl), antimony oxide (Sb₂O₃), and gadolinium oxide (Gd₂O₃) were used as raw materials. 0.48223 g of Cs₂CO₃, 0.49492 g of CdCO₃, 0.01743 g of Sb₂O₃, and 0.00542 g of Gd₂O₃ were weighed out respectively. The weighed materials were placed in a 25 mL white polytetrafluoroethylene (PTFE) liner, and 10.44 mL of hydrochloric acid aqueous solution was added and mixed thoroughly. The PTFE liner was then sealed and placed in a metal reactor. The reactor temperature was increased from room temperature to 200 °C at a rate of 5 °C / min and maintained at this temperature for 10 hours. Finally, the temperature was slowly reduced to room temperature at a rate of 2.5 °C / hour. The crystals were then poured out from the polytetrafluoroethylene liner, carefully washed with ethanol, and dried under vacuum at 50 °C for 3 hours to obtain CsCdCl3:0.04Sb. 3+ 0.01Gd 3+ Perovskite crystal materials.

[0041] Figure 1 The X-ray diffraction patterns of the wide-temperature-range perovskite crystal materials synthesized in Examples 1-4 are shown in the figures. As can be seen from the figures, the diffraction patterns of the perovskite crystal materials prepared in these examples match well with the standard diffraction card PDF#18-0337 for standard CsCdCl3 crystals, indicating that CsCdCl3:Sb was successfully synthesized. 3+ M n+ The crystalline material, with no impurity phase introduced by heterovalent ion doping; and its spectra are not only sharp but also have clear outlines, indicating that the obtained perovskite crystals have high crystallinity.

[0042] Figure 2 Sb was shown 3+ Single-doped CsCdCl3:0.04Sb 3+ Compared with the CsCdCl3:0.04Sb prepared in Example 4 3+ 0.01Gd 3+ A comparison of the emission spectrum (a) and the thermoluminescent emission spectrum (b) is shown; the emission spectrum was acquired after X-ray excitation at 100 K for 2 seconds; the thermoluminescent emission spectrum was acquired after X-ray excitation at 125 K (X-ray generation conditions were 45 kV, 70 μA, 3.15 W). Figure 2 As can be seen from the data, under X-ray excitation, CsCdCl3:0.04Sb 3+ The sample's maximum emission peak is located at 544 nm, while CsCdCl3:0.04Sb 3+ 0.01Gd 3+The maximum emission peak of the sample is located at 564 nm, and the difference between the two emission peaks is 20 nm (a). This indicates that the defect states in the two materials are different. To further demonstrate this difference in defect states, the thermoluminescence emission spectra of the two materials at 125 K after X-ray excitation were compared. The figure shows that CsCdCl3:0.04Sb 3+ The sample's maximum thermoluminescence emission peak is located at 647 nm, while CsCdCl3:0.04Sb 3+ 0.01Gd 3+ The maximum thermoluminescence emission peak of the sample is located at 618 nm, with a difference of 29 nm (b). These results indicate that Gd doping leads to the obtained CsCdCl3:0.04Sb... 3+ 0.01Gd 3+ Perovskite crystals exhibit characteristics similar to CsCdCl3:0.04Sb. 3+ Different defect structures lead to the formation of a new product.

[0043] Figure 3 CsCdCl3:0.04Sb 3+ Thermoluminescence curves of perovskite crystals and perovskite crystals synthesized in Examples 1-4 after excitation with X-rays (6.94 mGy) at 100 K for 70 seconds (X-ray generation conditions: 30 kV, 50 μA, 1.5 W; heating rate for thermoluminescence testing: 1 K / s). From the figures, it can be observed that CsCdCl3:Sb doped with different metal elements... 3+ M n+ All exhibit thermoluminescent bands with main peaks at 114 K, 125 K, and 173 K, while CsCdCl3:0.04Sb 3+ 0.01Gd 3+ A thermoluminescence band with a main peak at approximately 244 K can also be observed; among which, CsCdCl3:0.04Sb 3+ 0.01Zr 4+ The three thermoluminescent bands cover a temperature range from 100 K to 400 K, CsCdCl3:0.04Sb 3+ 0.01Sn 2+ The three thermoluminescent bands cover a temperature range from 100 K to 300 K, CsCdCl3:0.04Sb 3+ 0.01Hf 4+ The three thermoluminescent bands cover a temperature range from 100 K to 350 K, CsCdCl3:0.04Sb 3+ 0.01Gd 3+ The four thermoluminescent bands cover a temperature range from 100 K to 350 K. This is similar to Sb-doped CsCdCl3:0.04Sb.3+ Compared to crystalline materials, CsCdCl3:0.04Sb 3+ 0.01Zr 4+ The thermoluminescence integral intensity is 1.3 times that of CsCdCl3:0.04Sb 3+ 0.01Sn 2+ The thermoluminescence integral intensity is 1.1 times that of CsCdCl3:0.04Sb 3+ 0.01Hf 4+ The thermoluminescence integral intensity is 1.5 times that of CsCdCl3:0.04Sb 3+ 0.01Gd 3+ The thermoluminescence integral intensity is 1.6 times that of the crystal, indicating that the crystal obtained in the example has a high carrier storage capacity in the temperature range of 100-350 K.

[0044] Figure 4 The CsCdCl3:0.04Sb synthesized in Example 3 3+ 0.01Hf 4+ The isothermal afterglow decay curve of the perovskite crystal material after X-ray excitation at 120 K for 400 seconds (X-ray generation conditions: 45 kV, 70 μA, 3.15 W). As can be seen from the figure, after X-ray excitation, afterglow can be observed for more than 21142 seconds (5.87 hours) at 120 K, and at this time, the afterglow intensity is 13 times that of the photomultiplier tube background signal. These results demonstrate that the CsCdCl3:0.04Sb synthesized in Example 3... 3+ 0.01Hf 4+ Perovskite crystals have very high carrier storage capacity at ultra-low temperature conditions of 120 K.

[0045] Figure 5 The CsCdCl3:0.04Sb synthesized in Example 4 3+ 0.01Gd 3+ The graph shows the relationship between the emission spectrum of perovskite crystal materials excited by X-rays at 100 K and the excitation time. As can be seen from the graph, the maximum emission peak value is at ~560 nm immediately after X-ray excitation; the emission band covers the region from 400 nm to 850 nm. When the excitation time is extended to 92 seconds, the maximum emission peak value becomes 597 nm. Furthermore, with the extension of X-ray excitation time, the emission spectrum of CsCdCl3:0.04Sb... 3+ 0.01Gd 3+ The luminescence intensity increases slowly.

[0046] Figure 6 The CsCdCl3:0.04Sb synthesized in Example 4 3+ 0.01Gd 3+The thermoluminescence emission spectrum of perovskite crystal material excited by X-rays at 100 K for 500 seconds (X-ray generation conditions: 45 kV, 70 μA, 3.15 W; thermoluminescence heating rate: 1 K / s). The figure shows that the thermally excited emission exhibits a broad emission band from 450 nm to 900 nm; the maximum emission value is approximately 610 nm.

[0047] Figure 7 The CsCdCl3:0.04Sb synthesized in Example 4 3+ 0.01Gd 3+ The absolute decay curve of the room-temperature isothermal afterglow of perovskite crystal material after being excited by 365 nm ultraviolet light for 300 seconds at room temperature. The figure shows that when the 365 nm light excitation stops for 5 seconds, the CsCdCl3:0.04Sb... 3+ 0.01Gd 3+ The absolute afterglow intensity can reach 1.27 cd / m². 2 When the 365 nm photoexcitation stopped for 200 seconds, the CsCdCl3:0.04Sb 3+ 0.01Gd 3+ The absolute intensity at room temperature remains very high, with an intensity that is the lowest resolution the human eye can perceive in darkness (0.0032 mcd / m²). 2 The value is approximately 2843 times that of CsCdCl3:0.04Sb. These results indicate that CsCdCl3:0.04Sb... 3+ 0.01Gd 3+ Perovskite crystal materials have very rich defect traps when excited by 365 nm ultraviolet light, which can produce very high carrier storage capacity.

[0048] The CsCdCl3:0.04Sb synthesized in Example 4 3+ 0.01Gd 3+ Perovskite crystals were ground into powder in a mortar and passed through a 200-mesh sieve. The powder was then dispersed in silicone resin to form a thin film. A chicken foot and a metal rod, serving as the imaging object, were placed on the prepared film, and the object and film were vertically irradiated with X-rays in darkness. After irradiation, the object was removed from the film, and the film was heated to 280 K. The X-ray imaging results are shown below. Figure 8 . Figure 8 The photographs clearly show the internal structure of the chicken claw bone and the metal rod, confirming the synthesis of CsCdCl3:0.04Sb. 3+ 0.01Gd 3+ Perovskite crystals can be used in X-ray imaging for structural identification and analysis.

[0049] The above description is only a preferred embodiment of the present invention. All equivalent changes and modifications made within the scope of the claims of the present invention should be included in the scope of the present invention.

Claims

1. A wide-temperature-range perovskite optical storage material, characterized in that: Its general chemical formula is CsCdCl3:xSb 3+ ,yM n+ M n+ Zr 4+ Sn 2+ Hf 4+ or Gd 3+ Furthermore, 0 < x < 0.06 and 0 < y < 0.02; the material can be excited by X-rays and 200-365 nm ultraviolet light to induce free charge carriers, and the storage temperature of these charge carriers covers the range of 100~350 K.

2. The wide-temperature-range perovskite optical storage material according to claim 1, characterized in that: Its crystal structure belongs to the hexagonal crystal system, and its space group is P63 / mmc.

3. A method for synthesizing the wide-temperature-range perovskite optical storage material as described in claim 1, characterized in that, It includes the following steps: (1) Weigh out the required cesium-containing compounds, cadmium-containing compounds, chlorine-containing compounds, antimony-containing compounds, and compounds containing metal element M according to their stoichiometric ratios; (2) The weighed compounds were thoroughly mixed and then placed in a metal reactor for heat treatment. After separation, the solids were collected to obtain CsCdCl3:Sb 3+ M n+ Wide-temperature-range perovskite crystals.

4. The method for synthesizing a wide-temperature-range perovskite optical storage material according to claim 3, characterized in that: The cesium-containing compound is at least one of cesium carbonate and cesium chloride; The cadmium-containing compound is at least one of cadmium carbonate and cadmium chloride; The chlorine-containing compound is hydrogen chloride; The antimony-containing compound is at least one of antimony oxide and antimony chloride; The compound containing the metal element M is at least one of zirconium chloride, stannous oxide, hafnium dioxide, and gadolinium oxide.

5. The method for synthesizing a wide-temperature-range perovskite optical storage material according to claim 3, characterized in that: The heat treatment described in step (2) involves rapidly raising the temperature from room temperature to 160-200 ℃ at a rate of 5 ℃ / min, holding it at that temperature for 3-15 hours, and then slowly cooling it back to room temperature at a rate of 2-10 ℃ / hour.

6. The application of a wide-temperature-range perovskite material as described in claim 1 as an X-ray optical storage material.

7. The application according to claim 6, characterized in that: Specifically used for X-ray imaging, information storage, or anti-counterfeiting.

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