Generating device of surface electromagnetic wave radiation source
By adjusting the plasma velocity within the electron beam channel through a plasma excitation unit and an acceleration unit, and combining a slow-wave circuit and an accelerating electrode, the problem of existing electromagnetic wave radiation sources being unable to achieve high frequency and high power has been solved. This results in a high-frequency, broadband, and high-power electromagnetic wave radiation source suitable for industrial applications.
Patent Information
- Application Number
- CN202511546100.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-10-28
- Publication Date
- 2026-02-10
AI Technical Summary
Existing electromagnetic radiation sources cannot pass through narrow electron beam channels, thus failing to achieve high-frequency, wider-bandwidth, and high-power electromagnetic radiation sources, and thus cannot meet the needs of industrial development.
By employing a plasma excitation unit and a plasma acceleration unit, an electron beam channel is formed by adjusting the velocity of the plasma within the electron beam channel. This outputs an electromagnetic wave radiation source at the target frequency, bandwidth, or power. The speed and focusing of the electron beam are adjusted using a slow-wave circuit and an accelerating electrode, thereby achieving high-frequency, broadband, and high-power electromagnetic wave radiation.
It has achieved the generation of high-frequency, wider bandwidth and high-power electromagnetic wave radiation sources, which are suitable for industrial needs and can operate at frequencies up to 1THz, or even infrared frequencies.
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Figure CN121507531A_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of electromagnetic wave technology, and in particular to a device for generating a surface electromagnetic wave radiation source. Background Technology
[0002] In related technologies, when an electron beam passes over the surface of a slow-wave circuit, the kinetic energy carried by the electron beam is transferred to a high-frequency field, thus obtaining an electromagnetic wave radiation source. Connecting this electromagnetic wave radiation source to a transmission channel yields microwave vacuum devices such as oscillators and microwave amplifiers. With the development of industrial technology, there is a desire for electromagnetic wave radiation sources with higher frequencies, wider bandwidths, and greater power, requiring increasingly larger electron beam currents and smaller gaps between the electron beam and the slow-wave current. However, the electron beams in existing electromagnetic wave radiation sources cannot pass through narrow electron beam channels, thus preventing the generation of high-frequency, wider-bandwidth, and high-power electromagnetic wave radiation sources, which fails to meet the current industrial development needs.
[0003] In summary, the technical problems existing in the relevant technologies need to be improved. Summary of the Invention
[0004] The main objective of this application is to provide a surface electromagnetic wave radiation source generating device that can generate a high-frequency, wider-bandwidth, and high-power electromagnetic wave radiation source.
[0005] To achieve the above objectives, embodiments of this application propose a device for generating a surface electromagnetic wave radiation source, the device comprising: A plasma excitation unit, which is used to generate plasma; A plasma acceleration unit includes an electron accelerating power supply, a cathode end face, a slow-wave circuit, several insulating spacers, several accelerating electrodes, and an output end face. The cathode end face is connected to the positive terminal of the electron accelerating power supply, and the output end face is connected to the negative terminal of the electron accelerating power supply. The electron accelerating power supply provides acceleration power. The middle region of the upper surface of the slow-wave circuit, together with the cathode end face, several insulating spacers, several accelerating electrodes, and the middle region of the lower surface of the output end face, form an electron beam channel. Several insulating spacers and several accelerating electrodes are spaced apart between the cathode end face and the output end face to adjust the velocity of the plasma in the electron beam channel, so as to output an electromagnetic wave radiation source at a target frequency, target bandwidth, or target power.
[0006] In some embodiments, the plasma excitation unit includes a plasma excitation power supply, an inner electrode, an outer electrode, a switch, a first capacitor, and a plasma cavity; the plasma excitation power supply, the outer electrode, the inner electrode, and the switch are connected in sequence to form a first excitation closed loop; the outer electrode, the inner electrode, the switch, and the first capacitor are connected in sequence to form a second excitation closed loop; when the switch is closed, plasma is excited by discharge between the inner electrode and the outer electrode; the first capacitor is used to increase the excitation time of the plasma; the plasma cavity is used to store the excited plasma.
[0007] In some embodiments, the plasma excitation unit further includes an insulating component disposed between the inner electrode and the outer electrode.
[0008] In some embodiments, the plasma acceleration unit further includes a second capacitor, and the electron acceleration power supply, the cathode end face, and the output end face are sequentially connected to form a first acceleration closed loop; the cathode end face, the second capacitor, and the output end face are sequentially connected to form a second acceleration closed loop; the connection point of the electron acceleration power supply and the cathode end face in the first closed loop is connected to the connection point of the plasma excitation power supply and the external electrode in the first excitation closed loop.
[0009] In some embodiments, the slow-wave circuit is fabricated using semiconductor processing technology.
[0010] In some embodiments, the slow-wave circuit is fabricated using nanotechnology processes.
[0011] In some embodiments, the slow-wave circuit is provided with a slow-wave fin module, which is composed of a plurality of slow-wave fins.
[0012] In some embodiments, the width of the plurality of accelerating electrodes is the same, and the width of the slow-wave fin module is greater than the width of a single accelerating electrode.
[0013] In some embodiments, the widths of the plurality of accelerating poles are not the same, the width of the slow-wave fin module is smaller than the maximum width of the accelerating pole, and the slow-wave fin module is disposed below the accelerating pole corresponding to the maximum width.
[0014] In some embodiments, the plasma acceleration unit further includes an insulating base plate disposed below the slow-wave circuit.
[0015] The embodiments of this application include at least the following beneficial effects: This application provides a surface electromagnetic wave radiation source generating device. This scheme sets up a plasma excitation unit for generating plasma, and simultaneously sets up a plasma acceleration unit including an electron accelerating power supply, a cathode end face, a slow wave circuit, several insulating spacers, several accelerating electrodes, and an output end face. An electron beam channel is formed in the middle region of the upper surface of the slow wave circuit and the middle region of the lower surface of the cathode end face, several insulating spacers, several accelerating electrodes, and the output end face. After several insulating spacers and several accelerating electrodes are spaced apart between the cathode end face and the output end face, the plasma acceleration unit adjusts the velocity of the plasma in the electron beam channel output by the plasma excitation unit, thereby outputting an electromagnetic wave radiation source with a target frequency, target bandwidth, or target power, and thus obtaining a high-frequency, wider bandwidth, and high-power electromagnetic wave radiation source. Attached Figure Description
[0016] Figure 1 This is an overall schematic diagram of the surface electromagnetic wave radiation source generating device provided in the embodiments of this application; Figure 2 This is a cross-sectional schematic diagram of a plasma acceleration unit provided in an embodiment of this application; Figure 3 This is a circuit diagram of the surface electromagnetic wave radiation source provided in an embodiment of this application; Figure 4 This is a cross-sectional schematic diagram of the plasma excitation unit provided in the embodiments of this application; Figure 5 This is a cross-sectional schematic diagram of another plasma acceleration unit provided in an embodiment of this application. Detailed Implementation
[0017] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of this application and are not intended to limit it. In the following description, when referring to the accompanying drawings, unless otherwise indicated, the same numbers in different drawings represent the same or similar elements. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with those of this application; they are merely examples of apparatuses and methods consistent with some aspects of the embodiments of this application as detailed in the appended claims.
[0018] It is understood that the terms “first,” “second,” etc., used in this application may be used herein to describe various concepts, but unless otherwise stated, these concepts are not limited by these terms. These terms are only used to distinguish one concept from another. For example, without departing from the scope of the embodiments of this application, first information may also be referred to as second information, and similarly, second information may also be referred to as first information. Depending on the context, the words “if,” “when,” or “in response to a determination” as used herein may be interpreted as “when…” or “when…” or “in response to a determination.”
[0019] As used in this application, the terms "at least one", "multiple", "each", "any", etc., "at least one" includes one, two or more, "multiple" includes two or more, "each" refers to each of the corresponding multiples, and "any" refers to any one of the multiples.
[0020] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein is for the purpose of describing embodiments of this application only and is not intended to limit this application.
[0021] In related technologies, when an electron beam passes over the surface of a slow-wave circuit, the kinetic energy carried by the electron beam is transferred to a high-frequency field, thus obtaining an electromagnetic wave radiation source. Connecting this electromagnetic wave radiation source to a transmission channel yields microwave vacuum devices such as oscillators and microwave amplifiers. With the development of industrial technology, there is a growing demand for electromagnetic wave radiation sources with higher frequencies, wider bandwidths, and greater power. This necessitates larger electron beam currents and smaller gaps between the electron beam and the slow-wave current (i.e., smaller electron beam channels), increasing the engineering challenges. However, the electron beams in existing electromagnetic wave radiation sources cannot pass through narrow electron beam channels, thus preventing the generation of high-frequency, wider-bandwidth, and high-power electromagnetic wave radiation sources, which fails to meet the current industrial development needs.
[0022] In view of this, the present application provides a surface electromagnetic wave radiation source generating device that can obtain a high-frequency, wider bandwidth and high-power electromagnetic wave radiation source.
[0023] The embodiments of this application will be described in detail below with reference to the accompanying drawings: Reference Figure 1 This application provides a surface electromagnetic wave radiation source generation device, which includes a plasma excitation unit 100 and a plasma acceleration unit 200. The plasma excitation unit 100 is used to generate plasma. Figure 2 and Figure 3As shown, the plasma acceleration unit 200 includes an electron acceleration power supply, a cathode end face 210, a slow-wave circuit 220, several insulating spacers 230, several accelerating electrodes 240, and an output end face 250. The cathode end face 210 is connected to the positive terminal of the electron acceleration power supply, and the output end face 250 is connected to the negative terminal of the electron acceleration power supply. The electron acceleration power supply is used to provide acceleration power. The middle region of the upper surface of the slow-wave circuit 220 and the middle region of the lower surface of the cathode end face 210, several insulating spacers 230, several accelerating electrodes 240, and the output end face 250 form an electron beam channel 300. Several insulating spacers 230 and several accelerating electrodes 240 are spaced apart between the cathode end face 210 and the output end face 250 to adjust the velocity of the plasma in the electron beam channel so as to output an electromagnetic wave radiation source at a target frequency, target bandwidth, or target power.
[0024] It is understood that the cathode end face, output end face, accelerating electrode, and slow wave circuit in this embodiment are all made of conductive material. The insulating spacer is made of insulating material.
[0025] It is understandable that, such as Figure 3 and Figure 4 As shown, the plasma excitation unit 100 includes a plasma excitation power supply, an inner electrode 120, an outer electrode 130, a switch, a first capacitor, and a plasma cavity 110. The plasma excitation power supply, outer electrode 130, inner electrode 120, and switch are connected in sequence to form a first excitation closed loop. The outer electrode 130, inner electrode 120, switch, and first capacitor are connected in sequence to form a second excitation closed loop. When the switch is closed, plasma is excited by discharge between the inner electrode and the outer electrode. The first capacitor is used to increase the excitation time of the plasma. The plasma cavity 110 is used to store the excited plasma.
[0026] Specifically, in the prior art, when the electron gun is in operation, after the internal electrode directly ignites and excites plasma from the plasma cavity, the circuit is turned on, the external circuit of the plasma excitation power supply is short-circuited, and it enters a power-off protection state. However, the capacitive devices in the plasma excitation power supply have limited energy storage and cannot provide sufficient plasma. Furthermore, the internal resistance of the plasma excitation power supply causes repeated on-off switching of the plasma excitation, resulting in an intermittent plasma that cannot provide a stable and continuous plasma for the plasma acceleration unit. Therefore, this embodiment increases the plasma excitation time of the second excitation closed loop by incorporating a first capacitor in the plasma excitation unit. Figure 3 As shown, when the switch is closed, the gap between the inner and outer electrodes discharges continuously, thereby generating continuous plasma.
[0027] It is understandable that, such as Figure 3As shown, the plasma acceleration unit also includes a second capacitor. The electron acceleration power supply, the cathode end face, and the output end face are sequentially connected to form a first acceleration closed loop; the cathode end face, the second capacitor, and the output end face are sequentially connected to form a second acceleration closed loop; the connection point between the electron acceleration power supply and the cathode end face in the first closed loop is connected to the connection point between the plasma excitation power supply and the external electrode in the first excitation closed loop. Specifically, after the plasma excitation unit excites plasma, the plasma is drawn into the electron beam channel, and the plasma movement process within the electron beam channel is controlled by the plasma acceleration unit. For example, it can be accelerated through the electron beam channel to obtain an electromagnetic wave radiation source with a higher operating frequency and a wider bandwidth, or it can pass through the electron beam channel at a constant speed to obtain an electromagnetic wave radiation source with a smaller bandwidth and a higher power.
[0028] It is understandable that, such as Figure 4 As shown, the plasma excitation unit of this embodiment further includes an insulating component 140, which is disposed between the inner electrode 120 and the outer electrode 130. Figure 2 and Figure 5 As shown, the plasma acceleration unit also includes an insulating base plate 270, which is disposed below the slow-wave circuit 220. Specifically, in this embodiment, both the insulating components and the insulating base plate are made of insulating material.
[0029] It is understood that the slow-wave circuit in this embodiment can be fabricated using either semiconductor processing techniques or nanotechnology techniques. Semiconductor processing involves the entire process of manufacturing electronic devices with specific functions on semiconductor materials (such as silicon and germanium) using physical and chemical methods. Nanotechnology refers to the development of new materials and devices by precisely controlling the structure and properties of matter at the nanoscale, encompassing the entire process from molecular self-assembly to nanofabrication.
[0030] It is understandable that, such as Figure 2 and Figure 5 As shown, the slow-wave circuit includes a slow-wave fin module 260, which is composed of several slow-wave fins. Specifically, as... Figure 2 As shown, several accelerating electrodes have the same width, but the width of the slow-wave fin module is greater than the width of a single accelerating electrode. Figure 2 In the structure shown, the plasma is accelerated below the insulating sheet and its velocity is uniformly distributed below the accelerating electrode. Because the width of the slow-wave fin module is greater than the width of a single accelerating electrode, the electron beam formed by the plasma is continuously accelerated within the interaction region. The higher the velocity of the electron beam, the higher the operating frequency of the resulting electromagnetic radiation source, and the wider the corresponding bandwidth. For example... Figure 5As shown, the widths of the several accelerating electrodes are different. The width of the slow-wave fin module is smaller than the maximum width of the accelerating electrode, and the slow-wave fin module is located below the accelerating electrode corresponding to the maximum width. Since the electron beam formed by the plasma is accelerated below the insulating sheet and moves at a constant speed below the accelerating electrode, and since the accelerating electrode directly above the slow-wave fin module is wider, the electron beam can pass through the electron beam channel at a constant speed, thus obtaining an electromagnetic wave with a small bandwidth but greater power.
[0031] In some embodiments, when the inner cavity of the surface electromagnetic radiation source generating device of this application embodiment is in a certain low-pressure environment, after the switches of the electron accelerating power supply and the plasma excitation power supply are closed, plasma is excited by discharge between the inner electrode and the outer electrode. The plasma continuously diffuses to the electron beam channel entrance, and even fills the internal space of the plasma cavity. Under the action of the plasma accelerating unit, the electrons near the electron beam channel entrance are pulled into the electron beam channel by the plasma accelerating unit. The plasma at other locations and the plasma subsequently excited by the plasma excitation unit replenish the vicinity of the electron beam channel entrance; while positively charged ions bombard the cathode end face, inner electrode, and outer electrode. Electrons continuously bombard the first accelerating electrode, causing it to become negatively charged, and the potential gradually decreases until its potential decreases to a certain level, and the electrons can no longer bombard the first accelerating electrode. A dynamic induced electrostatic field is generated in the electron channel to achieve dynamic electrostatic focusing, constraining the electrons to fill the electron beam channel, thereby obtaining an electron beam with a shape similar to the electron beam channel; then, the electrons bombard the second, third, ..., nth accelerating electrodes in sequence, further increasing the aspect ratio (longitudinal velocity / lateral velocity) of the electron velocity. Furthermore, the greater the voltage between the cathode end face and the output end face, the greater the distance between the cathode end face and the output end face, and the smaller the electron beam channel, the greater the aspect ratio (longitudinal velocity / lateral velocity) of the electron velocity. Because the accelerating electrode and the slow-wave circuit apply dynamic electrostatic focusing to the electron beam, the narrow side of the electron beam channel can be made very small, thus adapting to slower-wave circuits with higher frequencies. When the electron beam grazes the surface of the slow-wave circuit, the kinetic energy carried by the electron beam is converted into high-frequency field energy. The electron beam, having completed energy conversion, exits the electron beam channel and then forms electromagnetic waves through Cherenko radiation. Simultaneously, by adjusting the width ratio between the slow-wave fin module and the accelerating electrode on the slow-wave circuit, electromagnetic waves with higher frequencies and wider bandwidths can be obtained. For example, a strip electron beam with electromagnetic wave radiation sources above 200 GHz can be obtained, or a strip electromagnetic wave with higher power can be obtained. Moreover, this embodiment, by employing semiconductor processing technology and nanotechnology processing technology, allows the operating frequency to easily reach 1 THz, and even infrared frequency electromagnetic waves can be obtained.
[0032] The embodiments described in this application are for the purpose of more clearly illustrating the technical solutions of the embodiments of this application, and do not constitute a limitation on the technical solutions provided by the embodiments of this application. As those skilled in the art will know, with the evolution of technology and the emergence of new application scenarios, the technical solutions provided by the embodiments of this application are also applicable to similar technical problems.
[0033] Those skilled in the art will understand that the technical solutions shown in the figures do not constitute a limitation on the embodiments of this application, and may include more or fewer steps than shown, or combine certain steps, or different steps.
[0034] The device embodiments described above are merely illustrative. The units described as separate components may or may not be physically separate; that is, they may be located in one place or distributed across multiple network units. Some or all of the modules can be selected to achieve the purpose of this embodiment according to actual needs.
[0035] Those skilled in the art will understand that all or some of the steps in the methods disclosed above, as well as the functional modules / units in the systems and devices, can be implemented as software, firmware, hardware, or suitable combinations thereof.
[0036] The terms “first,” “second,” “third,” “fourth,” etc. (if present) in the specification and accompanying drawings of this application are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of this application described herein can be implemented in orders other than those illustrated or described herein. Furthermore, the terms “comprising” and “having,” and any variations thereof, are intended to cover non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.
[0037] It should be understood that in this application, "at least one (item)" means one or more, and "more than" means two or more. "And / or" is used to describe the relationship between related objects, indicating that three relationships can exist. For example, "A and / or B" can represent three cases: only A exists, only B exists, and both A and B exist simultaneously, where A and B can be singular or plural. The character " / " generally indicates that the preceding and following related objects are in an "or" relationship. "At least one (item) of the following" or similar expressions refer to any combination of these items, including any combination of single or plural items. For example, at least one (item) of a, b, or c can represent: a, b, c, "a and b", "a and c", "b and c", or "a and b and c", where a, b, and c can be single or multiple.
[0038] The units described above as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the units can be selected to achieve the purpose of this embodiment according to actual needs.
[0039] The preferred embodiments of the present application have been described above with reference to the accompanying drawings, but this does not limit the scope of the claims of the present application. Any modifications, equivalent substitutions, and improvements made by those skilled in the art without departing from the scope and substance of the embodiments of the present application shall be within the scope of the claims of the present application.
Claims
1. A device for generating a surface electromagnetic wave radiation source, characterized in that, The device includes: A plasma excitation unit, which is used to generate plasma; A plasma acceleration unit includes an electron accelerating power supply, a cathode end face, a slow-wave circuit, several insulating spacers, several accelerating electrodes, and an output end face. The cathode end face is connected to the positive terminal of the electron accelerating power supply, and the output end face is connected to the negative terminal of the electron accelerating power supply. The electron accelerating power supply provides acceleration power. The middle region of the upper surface of the slow-wave circuit, together with the cathode end face, several insulating spacers, several accelerating electrodes, and the middle region of the lower surface of the output end face, form an electron beam channel. Several insulating spacers and several accelerating electrodes are spaced apart between the cathode end face and the output end face to adjust the velocity of the plasma in the electron beam channel, so as to output an electromagnetic wave radiation source at a target frequency, target bandwidth, or target power.
2. The apparatus according to claim 1, characterized in that, The plasma excitation unit includes a plasma excitation power supply, an inner electrode, an outer electrode, a switch, a first capacitor, and a plasma cavity. The plasma excitation power supply, the outer electrode, the inner electrode, and the switch are connected in sequence to form a first excitation closed loop. The outer electrode, the inner electrode, the switch, and the first capacitor are connected in sequence to form a second excitation closed loop. When the switch is closed, plasma is excited by discharge between the inner electrode and the outer electrode. The first capacitor is used to increase the excitation time of the plasma. The plasma cavity is used to store the excited plasma.
3. The apparatus according to claim 2, characterized in that, The plasma excitation unit further includes an insulating component disposed between the inner electrode and the outer electrode.
4. The apparatus according to claim 2, characterized in that, The plasma acceleration unit further includes a second capacitor. The electron acceleration power supply, the cathode end face, and the output end face are sequentially connected to form a first acceleration closed loop. The cathode end face, the second capacitor, and the output end face are sequentially connected to form a second acceleration closed loop. The connection point of the electron acceleration power supply and the cathode end face in the first closed loop is connected to the connection point of the plasma excitation power supply and the external electrode in the first excitation closed loop.
5. The apparatus according to claim 1, characterized in that, The slow-wave circuit is fabricated using semiconductor processing technology.
6. The apparatus according to claim 1, characterized in that, The slow-wave circuit was fabricated using nanotechnology.
7. The apparatus according to claim 5 or 6, characterized in that, The slow-wave circuit is equipped with a slow-wave fin module, which consists of several slow-wave fins.
8. The apparatus according to claim 7, characterized in that, The width of the plurality of accelerating electrodes is the same, and the width of the slow-wave fin module is greater than the width of a single accelerating electrode.
9. The apparatus according to claim 1, characterized in that, The widths of the plurality of accelerating poles are not the same, the width of the slow wave fin module is smaller than the maximum width of the accelerating pole, and the slow wave fin module is disposed below the accelerating pole corresponding to the maximum width.
10. The apparatus according to claim 1, characterized in that, The plasma acceleration unit also includes an insulating base plate, which is disposed below the slow-wave circuit.