Sulfur-resistant thin-film resistor and manufacturing method thereof

Abstract

The invention provides a sulfur-resistant thin-film resistor and a manufacturing method thereof. The sulfur-resistant thin-film resistor comprises a substrate, a first inner electrode pair, a resistance layer, a passivation layer, two sulfur-resistant conductive layers and a second inner electrode pair, the sulfur-resistant conductive layers comprise carbon materials, and each sulfur-resistant conductive layer is provided with a groove. The first inner electrode pair is covered with the sulfur-resistant conductive layer which is provided with the groove and contains carbon, so that the first inner electrode pair is prevented from being subjected to vulcanization reaction, and electrical conduction can be carried out through the sulfur-resistant conductive layer with good conductivity.

Description

Technical Field

[0001] This invention relates to a sulfur-resistant thin-film resistor and a method for manufacturing the same, particularly to a sulfur-resistant thin-film resistor comprising a carbon-containing sulfur-resistant conductive layer and a method for manufacturing the same. Background Technology

[0002] Because the internal electrode of the chip resistor contains silver, when sulfur-containing gas intrudes through the gap between the protective layer and the electroplating layer, it may react with the silver to produce silver sulfide (Ag2S). This will cause the internal electrode to break, resulting in resistor failure.

[0003] To prevent sulfidation in resistors, existing thin-film resistors use a resin silver paste coating on the inner electrode and part of the protective layer as a barrier layer to prevent sulfur-containing gases from directly penetrating into the inner electrode and reacting with the silver to form silver sulfide. However, in this existing structure, sulfur-containing gases can still penetrate into the gap between the resin silver paste and the protective layer and come into contact with the inner electrode. In other words, there is still a risk of silver sulfide forming on the inner electrode.

[0004] In view of this, there is an urgent need to provide a sulfur-resistant thin-film resistor and its manufacturing method to effectively prevent sulfur-containing gas from penetrating into the internal electrode. Summary of the Invention

[0005] One aspect of the present invention is to provide a sulfur-resistant thin-film resistor, which has a sulfur-resistant conductive layer containing carbon material disposed on a first inner electrode pair to prevent the intrusion of sulfur-containing gas.

[0006] Another aspect of the present invention is to provide a method for manufacturing a sulfur-resistant thin-film resistor, which prevents the intrusion of sulfur-containing gases by forming a sulfur-resistant conductive layer containing carbon material.

[0007] According to one aspect of the present invention, a sulfur-resistant thin-film resistor is provided. The sulfur-resistant thin-film resistor includes a substrate, wherein the substrate is rectangular, the long side of the substrate along a first direction is greater than the short side of the substrate along a second direction, and the first direction is perpendicular to the second direction; a first inner electrode pair, respectively disposed at both ends of the upper surface of the substrate, wherein the two ends of the upper surface are located at opposite ends of the long side of the substrate; a resistive layer, disposed on the upper surface of the substrate and spanning a portion of the first inner electrode pair; a passivation layer covering the resistive layer; two sulfur-resistant conductive layers, respectively disposed on the first inner electrode pair and covering a portion of the passivation layer, wherein the sulfur-resistant conductive layers comprise carbon material, and each of the sulfur-resistant conductive layers has a trench; a second inner electrode pair, respectively disposed on the sulfur-resistant conductive layers; a back electrode pair, respectively disposed at both ends of the lower surface of the substrate, wherein the two ends of the lower surface are located at opposite ends of the long side of the substrate; and an outer electrode pair, respectively connected to the back electrode pair along the side of the substrate from the second inner electrode pair.

[0008] According to an embodiment of the present invention, the above-mentioned anti-sulfur thin film resistor further includes a first insulating protective layer covering a portion of the passivation layer and the anti-sulfur conductive layer, wherein the first insulating protective layer contacts the first inner electrode pair through a trench; and a second insulating protective layer disposed on a portion of the first insulating protective layer and the second inner electrode pair.

[0009] According to one embodiment of the present invention, each of the first inner electrode pairs is T-shaped. Each of the first inner electrode pairs includes a first portion located at the edges of both ends of the substrate; and a second portion connected to the first portion, wherein the second portion is farther from the edges of both ends of the substrate than the first portion, and the length of the first portion along a second direction is greater than the length of the second portion along the second direction.

[0010] According to an embodiment of the present invention, each of the above-mentioned sulfur-resistant conductive layers has a first sulfur-resistant conductive portion and a second sulfur-resistant conductive portion, and the trench is located between the first sulfur-resistant conductive portion and the second sulfur-resistant conductive portion.

[0011] According to an embodiment of the present invention, the first sulfur-resistant conductive portion of each of the above-mentioned sulfur-resistant conductive layers is sandwiched between one of the first inner electrode pairs and one of the second inner electrode pairs, and the second sulfur-resistant conductive portion is disposed on the passivation layer.

[0012] According to one embodiment of the present invention, the width of the groove is 50 μm to 200 μm.

[0013] According to one embodiment of the present invention, the sulfur-resistant conductive layer comprises not less than 15 wt% carbon material, and the carbon material comprises graphite or carbon black.

[0014] According to one embodiment of the present invention, the above-mentioned anti-sulfur thin film resistor further includes two connecting layers respectively disposed on the side of the substrate, wherein the external electrode pairs are respectively disposed on the connecting layers.

[0015] According to one embodiment of the present invention, each of the above-mentioned external electrode pairs includes a copper layer, a nickel layer and a tin layer, and the copper layer is in solid contact with one of the interconnect layers.

[0016] According to another aspect of the present invention, a method for manufacturing a sulfur-resistant thin-film resistor is provided. The method includes providing a substrate; forming a first inner electrode pair at both ends of an upper surface of the substrate; forming a resistive layer on the upper surface of the substrate and spanning a portion of the first inner electrode pair; forming a passivation layer covering the resistive layer; forming two sulfur-resistant conductive layers respectively on the first inner electrode pair and covering a portion of the passivation layer, wherein the sulfur-resistant conductive layers comprise carbon material and each of the sulfur-resistant conductive layers has a trench; forming a first insulating protective layer covering portions of the passivation layer and the sulfur-resistant conductive layer; forming a second inner electrode pair respectively on the sulfur-resistant conductive layer and the first insulating protective layer; forming a second insulating protective layer on portions of the first insulating protective layer and the second inner electrode pair; forming a back electrode pair at both ends of a lower surface of the substrate; and forming an outer electrode pair extending from the second inner electrode pair along a side of the substrate to connect to the back electrode pair.

[0017] The anti-sulfur thin film resistor and its manufacturing method of the present invention utilize a grooved and carbon-containing anti-sulfur conductive layer to cover a silver-containing first inner electrode pair, thereby protecting the first inner electrode pair from sulfidation reaction and allowing electrical conduction through the anti-sulfur conductive layer with good conductivity. Attached Figure Description

[0018] A better understanding of the present invention will be obtained by reading the following detailed description in conjunction with the accompanying drawings. It should be noted that, as is standard practice in the industry, many features are not drawn to scale. In fact, for clarity of discussion, the dimensions of many features may be arbitrarily scaled.

[0019] Figure 1 A cross-sectional view is provided to illustrate an anti-sulfur thin-film resistor according to some embodiments of the present invention.

[0020] Figures 2A to 2I This is a top view taken from the top surface of the substrate to illustrate an intermediate stage of the process of an anti-sulfur thin-film resistor according to some embodiments of the present invention.

[0021] Figure 3 This is a bottom view taken from the lower surface of the substrate, illustrating an intermediate stage of the process of an anti-sulfur thin-film resistor according to some embodiments of the present invention. Detailed Implementation

[0022] The following disclosure provides numerous different embodiments or illustrations to implement various features of the invention. The specific examples of components and configurations described below are for the purpose of simplifying the invention. These are, of course, merely illustrative and are not intended to be limiting. For example, a description of a first feature formed on or above a second feature includes embodiments where the first and second features are in direct contact, as well as embodiments where other features are formed between the first and second features such that the first and second features are not in direct contact. Furthermore, the invention repeats element symbols and / or letters in various specific examples. This repetition is for the purpose of simplifying and clarifying the description and does not imply a relationship between the various discussed embodiments and / or configurations.

[0023] Furthermore, spatially relative terms, such as "below," "below," "lower," "above," and "upper," are used to facilitate the description of the relationship between a part or feature depicted in the accompanying drawings and other parts or features. In addition to the directions depicted in the drawings, spatially relative terms also include different orientations of the elements during use or operation. The device may be oriented in other ways (rotated 90 degrees or in other orientations), and the spatially relative descriptions used in this invention can also be interpreted in this way.

[0024] The manufacture and use of embodiments of the present invention are discussed in detail below. However, it will be understood that the embodiments provide many applicable inventive concepts that can be implemented in a wide variety of specific contexts. The specific embodiments discussed are for illustrative purposes only and are not intended to limit the scope of the invention.

[0025] As used in this invention, “around,” “about,” “approximately,” or “substantially” generally mean within 20 percent, 10 percent, or 5 percent of the stated value or range.

[0026] As described above, the present invention provides an anti-sulfur thin film resistor and its manufacturing method, which utilizes a grooved and carbon-containing anti-sulfur conductive layer to cover a first inner electrode pair containing silver, so as to protect the first inner electrode pair from sulfidation reaction, and can conduct electricity through the anti-sulfur conductive layer with good conductivity.

[0027] Please see Figure 1 This is a cross-sectional view illustrating an anti-sulfur thin-film resistor 100 according to some embodiments of the present invention. The anti-sulfur thin-film resistor 100 includes a substrate 110. In some embodiments, the material of the substrate 110 may include alumina (Al2O3), aluminum nitride (AlN), beryllium oxide (BeO), a suitable ceramic material, or a combination thereof.

[0028] The sulfur-resistant thin-film resistor 100 includes a first internal electrode 120A, a first internal electrode 120B (collectively referred to as a first internal electrode pair), a resistive layer 130, a passivation layer 140, a sulfur-resistant conductive layer 150A, a sulfur-resistant conductive layer 150B, a second internal electrode 170A, and a second internal electrode 170B (collectively referred to as a second internal electrode pair) disposed on a substrate 110. In some embodiments, the first internal electrode 120A and the first internal electrode 120B are respectively disposed on two ends of the upper surface 110A of the substrate 110, wherein the aforementioned two ends are located at opposite ends of the long side of the substrate 110. In some embodiments, the material of the first internal electrode 120A and the first internal electrode 120B includes glass, silver, a silver-palladium mixture electrode paste, or a combination thereof.

[0029] In some embodiments, the resistive layer 130 is configured to span a portion of the first internal electrode 120A and the first internal electrode 120B. In other words, the resistive layer 130 extends from the portion of the first internal electrode 120A on the upper surface 110A of the substrate 110 to the portion of the first internal electrode 120B. In some embodiments, the material of the resistive layer 130 includes, but is not limited to, nickel-chromium (NiCr), copper-nickel (CuNi), nickel-chromium-silicon (NiCrSi), nickel-chromium-aluminum (NiCrAl), nickel-chromium-aluminum-silicon (NiCrAlSi), nickel-chromium-aluminum-yttrium (NiCrAlY), nickel-chromium-tantalum-molybdenum (NiCrTaMo), tantalum nitride (TaN), copper-manganese-tin (CuMnSn), copper-manganese-nickel (CuMnNi), and gold, or combinations thereof.

[0030] In some embodiments, the passivation layer 140 is configured to completely cover the resistive layer 130. In some embodiments, the passivation layer 140 comprises an insulating material, such as silicon oxide, tantalum oxide, silicon nitride, or a combination thereof.

[0031] In some embodiments, sulfur-resistant conductive layers 150A and 150B are respectively disposed on the first inner electrode 120A and the first inner electrode 120B, and cover a portion of the passivation layer 140. In some embodiments, sulfur-resistant conductive layers 150A and 150B each have a trench 152. In some embodiments, sulfur-resistant conductive layers 150A and 150B comprise conductive carbon material (e.g., graphite or carbon black), and may optionally include electrode paste containing a conductive metal (e.g., nickel). In some embodiments, sulfur-resistant conductive layers 150A and 150B comprise not less than 15 wt% carbon material, preferably from about 15 wt% to about 30 wt%. Since carbon and sulfur do not react chemically, the inclusion of carbon material within the aforementioned specific content range in sulfur-containing conductive layers 150A and 150B can effectively prevent the penetration of sulfur-containing gases, and can effectively conduct electricity through the conductivity of carbon.

[0032] In some embodiments, the anti-sulfur thin-film resistor 100 may selectively include a first insulating protective layer 160 covering the passivation layer 140, the anti-sulfur conductive layer 150A, and the anti-sulfur conductive layer 150B. In the aforementioned embodiments, the first insulating protective layer 160 may cover the trenches 152 of the anti-sulfur conductive layers 150A and 150B. Due to the trenches 152, the first insulating protective layer 160 can be more preferably attached to the anti-sulfur conductive layers 150A and 150B to prevent interface peeling of the anti-sulfur thin-film resistor 100 due to application cycles or other external forces. In some embodiments, the material of the first insulating protective layer 160 includes resin, epoxy resin, epoxy resin containing inorganic fillers, or a combination thereof.

[0033] In some embodiments, the second internal electrode 170A and the second internal electrode 170B are respectively disposed on the sulfur-resistant conductive layer 150A and the sulfur-resistant conductive layer 150B. In embodiments including the first insulating protective layer 160, the second internal electrode 170A and the second internal electrode 170B also cover a portion of the first insulating protective layer 160 to prevent the intrusion of sulfur-containing gases. In some embodiments, the materials of the second internal electrode 170A and the second internal electrode 170B comprise epoxy resin and silver.

[0034] In some embodiments, the antisulfur thin-film resistor 100 may optionally include a second insulating protective layer 180 disposed on portions of the first insulating protective layer 160 (if present), the second inner electrode 170A, and the second inner electrode 170B. In some embodiments, the material of the second insulating protective layer 180 includes resin, epoxy resin, epoxy resin containing inorganic fillers, or a combination thereof.

[0035] The anti-sulfur thin film resistor 100 further includes a back electrode 190A and a back electrode 190B (which may be collectively referred to as a back electrode pair) disposed on the lower surface 110B of the substrate 110. In some embodiments, the back electrode 190A and the back electrode 190B are respectively disposed on both ends of the lower surface 110B of the substrate 110, wherein the aforementioned two ends are located at opposite ends of the long side of the substrate 110.

[0036] The sulfur-resistant thin-film resistor 100 further includes an external electrode pair 195 extending from the second inner electrode 170A and the second inner electrode 170B along the side 110C of the substrate 110 to connect the back electrode 190A and the back electrode 190B. In some embodiments, the external electrode pair 195 includes a copper layer 195A, a nickel layer 195B, and a tin layer 195C. In the aforementioned embodiments, the thickness of the copper layer 195A is about 5 μm to about 30 μm, and the thicknesses of the nickel layer 195B and the tin layer 195C are about 5 μm to about 10 μm, respectively. Compared to existing high-resistivity thin-film resistors where the external electrode only includes a nickel layer and a tin layer, the external electrode pair 195 of the present invention further includes a copper layer 195A, which can react with sulfur-containing gas to form copper sulfide (CuS), thereby preventing more sulfur-containing gas from penetrating into the interior. In other words, the copper layer 195A is designed as a sulfur reaction sacrificial layer.

[0037] In some embodiments, the anti-sulfur thin-film resistor 100 may optionally include a connection layer 192 disposed on a side 110C of the substrate 110, and an external electrode pair 195 disposed on the connection layer 192, wherein the copper layer 195A of the external electrode pair 195 substantially contacts the connection layer 192. In some embodiments, the connection layer 192 comprises a nickel-chromium alloy (NiCr).

[0038] Figures 2A to 2I This is a top view taken from the upper surface 110A of the substrate 110, showing an intermediate stage of the process of the anti-sulfur thin-film resistor 100 according to some embodiments of the present invention. First, please refer to... Figure 2A The first inner electrode 120A and the first inner electrode 120B are disposed on both ends of the upper surface 110A of the substrate 110. The length L of the long side of the substrate 110 is greater than the width W of the short side. In some embodiments, the first inner electrode 120A and the first inner electrode 120B both have a T-shape. The first inner electrode 120A includes a first portion 120A1 located at the edges of both ends and a second portion 120A2 connected to the first portion 120A1, and the first inner electrode 120B includes a first portion 120B1 located at the edges of both ends and a second portion 120B2 connected to the first portion 120B1.

[0039] The first internal electrode 120A and the first internal electrode 120B have a similar configuration. The following description focuses on the first internal electrode 120A. The second portion 120A2 is further away from the edges at both ends compared to the first portion 120A1. The substrate 110 has a length L along its long side in the first direction X and a width W along its short side in the second direction Y. In some specific examples of SMD 0402 resistors, the length L of the long side is 1.0 mm, and the width W of the short side is 0.5 mm. In some embodiments, the distance d of the first portion 120A1 along the first direction X is approximately 50 μm to approximately 150 μm, and the width CW along the second direction Y is approximately 4 / 5 to approximately 1 times the width W of the short side of the substrate 110. In some embodiments, the length C1L of the second portion 120A2 along the first direction X is approximately 1 / 5 to approximately 1 / 3 times the length L of the long side of the substrate 110, and the width C1W along the second direction Y is approximately 1 / 4 to approximately 2 / 3 times the width W of the short side of the substrate 110. In some specific examples of SMD 0402 resistors, the distance d is 75 μm, the width CW is 0.44 mm, the width C1W is 0.25 mm, and the length C1L is 0.15 mm.

[0040] Please see Figure 2B A barrier layer (mask) 125 is formed on the substrate 110, covering portions of the first internal electrodes 120A and 120B, and exposing the sputtering area. In some embodiments, the length RL of the sputtering area along the first direction X is approximately 1 / 2 to approximately 3 / 5 times the length L of the long side of the substrate 110, and the width RW along the second direction Y is approximately 2 / 5 to approximately 4 / 5 times the width W of the short side of the substrate 110. In some specific examples of SMD 0402 resistors, the length RL is 620 μm and the width RW is 350 μm. In some embodiments, the barrier layer 125 is formed by printing or photolithography.

[0041] Next, a resistive layer 130 is formed on the upper surface 110A of the substrate 110 using, for example, sputtering. Then, the barrier layer 125 is removed so that the resistive layer 130 is formed to span the first internal electrode 120A and the first internal electrode 120B, as shown below. Figure 2C As shown.

[0042] Please see Figure 2DIn some embodiments, after the resistive layer 130 is formed, a laser trimming step is performed on the resistive layer 130, that is, the resistance value is adjusted by means of laser or physical processing. Additionally, a barrier layer 135 is formed on the portion of the upper surface 110A of the substrate 110 not covered by the resistive layer 130 to protect the first internal electrode 120A and the first internal electrode 120B, and selectively expose portions of the first internal electrode 120A and the first internal electrode 120B. In some embodiments, the barrier layer 135 is formed by printing or photolithography. In some embodiments, the length PL of the area not covered by the barrier layer 135 along the first direction X is about 3 / 5 to about 3 / 4 times the length L of the long side of the substrate 110, and the width PW of the area not covered by the barrier layer 135 along the second direction Y is about 2 / 5 to about 1 times the width W of the short side of the substrate 110. In some specific examples of resistors with the specification SMD 0402, the length PL is 450μm and the width PW is 750μm.

[0043] Next, please refer to Figure 2E A passivation layer 140 is formed that completely covers the resistive layer 130 (see reference). Figure 2D The barrier layer 135 is removed using a stripping solution. In some embodiments, the passivation layer 140 is formed using methods such as sputtering or chemical vapor deposition (CVD).

[0044] Please see Figure 2F A sulfur-resistant conductive layer 150A and a sulfur-resistant conductive layer 150B are formed on the first inner electrode 120A and the first inner electrode 120B, respectively, and cover a portion of the passivation layer 140. In some embodiments, the sulfur-resistant conductive layer 150A and the sulfur-resistant conductive layer 150B are formed by printing. In some embodiments, the width CCW of the sulfur-resistant conductive layer 150A and the sulfur-resistant conductive layer 150B along the second direction Y is about 4 / 5 to about 1 times the width W of the short side of the substrate 110. In some embodiments, the sulfur-resistant conductive layer 150A includes a first sulfur-resistant conductive portion 150A1 and a second sulfur-resistant conductive portion 150A2, and the sulfur-resistant conductive layer 150B includes a first sulfur-resistant conductive portion 150B1 and a second sulfur-resistant conductive portion 150B2, wherein the second sulfur-resistant conductive portions 150A2 and the second sulfur-resistant conductive portions 150B2 are partially disposed on the passivation layer 140. The groove 152 is located between the first sulfur-resistant conductive part 150A1 and the second sulfur-resistant conductive part 150A2, and between the first sulfur-resistant conductive part 150B1 and the second sulfur-resistant conductive part 150B2.

[0045] In some embodiments, the length CCL1 of the first sulfur-resistant conductive portion 150A1 and the first sulfur-resistant conductive portion 150B1 along the first direction X is approximately 100 μm to approximately 250 μm, while the length CCL2 of the second sulfur-resistant conductive portion 150A2 and the second sulfur-resistant conductive portion 150B2 along the first direction X is approximately 1 / 10 to approximately 4 / 10 of the length L of the long side of the substrate 110. The length CCL1 must be controlled within the aforementioned specific range to contact the subsequently formed second inner electrode 170A and second inner electrode 170B, i.e., the first sulfur-resistant conductive portion 150A1 is sandwiched between the first inner electrode 120A and the second inner electrode 170A, and the first sulfur-resistant conductive portion 150B1 is sandwiched between the first inner electrode 120B and the second inner electrode 170B. The length CCL2 must be controlled within the aforementioned specific range to prevent the second sulfur-resistant conductive portions 150A2 and the second sulfur-resistant conductive portions 150B2 from connecting. In some embodiments, the spacing Cg of the trenches 152 along the first direction X is about 50 μm to about 200 μm. The spacing Cg of the trenches 152 must be controlled within the aforementioned range to facilitate the fabrication of sulfur-resistant conductive layers 150A and 150B of suitable size. In other embodiments, the long side length L, length CCL1, length CCL2, and spacing Cg of the substrate 110 have the following relationship:

[0046] (CCL1+CCL2+Cg)×2≤(L-50μm) (1).

[0047] In some specific examples of resistors with the SMD 0402 specification, the width CCW is 460μm, the length CCL1 is 150μm, the length CCL2 is 150μm, and the pitch Cg is 100μm.

[0048] Next, please refer to Figure 2G A first insulating protective layer 160 is formed on the passivation layer 140, covering the second sulfur-resistant conductive portions 150A2, 150B2, and trench 152, and selectively covering portions of the first sulfur-resistant conductive portions 150A1 and 150B1. In some embodiments, the first insulating protective layer 160 is formed by printing or photolithography. In some embodiments, the length G1L of the first insulating protective layer 160 along the first direction X is between (L-100μm) and (L-250μm), and the width G1W along the second direction Y is about 4 / 5 to about 1 times the width W of the short side of the substrate 110. In some specific examples of resistors with an SMD 0402 specification, the length G1L is 800μm and the width G1W is 480μm.

[0049] Please see Figure 2HSecond internal electrodes 170A and 170B are formed on the sulfur-resistant conductive layers 150A and 150B, respectively, and on portions covering the first insulating protective layer 160. In some embodiments, the second internal electrodes 170A and 170B are formed by printing. In some embodiments, the length C2L of the second internal electrodes 170A and 170B along the first direction X is about 1 / 4 to about 1 / 3 times the length L of the long side of the substrate 110, and the width C2W along the second direction Y is about 4 / 5 to about 1 times the width W of the short side of the substrate 110. In some specific examples of SMD 0402 resistors, the length C2L is 350 μm and the width C2W is 480 μm.

[0050] Please see Figure 2I A second insulating protective layer 180 is formed on portions of the first insulating protective layer 160, the second internal electrode 170A, and the second internal electrode 170B. In some embodiments, the second insulating protective layer 180 is formed by printing or photolithography. In some embodiments, the length G2L of the second insulating protective layer 180 along the first direction X is about 1 / 3 to about 2 / 3 times the length L of the long side of the substrate 110, and the width G2W along the second direction Y is about 4 / 5 to about 1 times the width W of the short side of the substrate 110. In some specific examples of resistors with an SMD 0402 specification, the length G2L is 500 μm and the width G2W is 500 μm.

[0051] Please see Figure 3 This is a bottom view, taken from the lower surface 110B of the substrate 110, illustrating an intermediate stage of the process of an anti-sulfur thin-film resistor 100 according to some embodiments of the present invention. Back electrodes 190A and 190B are formed at both ends of the lower surface 110B of the substrate 110. In some embodiments, the back electrodes 190A and 190B are formed by printing. In some embodiments, the length BCL of the back electrodes 190A and 190B along the first direction X is approximately 1 / 5 to approximately 1 / 3 times the length L of the long side of the substrate 110, and the width BCW along the second direction Y is approximately 4 / 5 to approximately 1 times the width W of the short side of the substrate 110.

[0052] Please refer to the previous document. Figure 1 ,exist Figure 2I and Figure 3After the process is completed, a connection layer 192 can be formed on the side 110C of the substrate 110, and a copper layer 195A, a nickel layer 195B, and a tin layer 195C (i.e., the external electrode pair 195) are sequentially formed, extending from the second inner electrode 170A and the second inner electrode 170B along the connection layer 192 to connect the back electrode 190A and the back electrode 190B. In some embodiments, the connection layer 192 is formed by sputtering, while the external electrode pair 195 is formed by electroplating.

[0053] Based on the above, the present invention provides a sulfur-resistant thin-film resistor and its manufacturing method. The method involves covering a first inner electrode with a grooved, carbon-containing sulfur-resistant conductive layer to protect the first inner electrode from sulfidation reaction, and allowing electrical conduction through the sulfur-resistant conductive layer with good conductivity. Furthermore, covering the second inner electrode with a first insulating protective layer and a sulfur-resistant conductive layer can more effectively prevent the intrusion of sulfur-containing gases. Moreover, the newly added copper layer on the outer electrode of the present invention can serve as a sacrificial layer for sulfur gas reaction, further preventing sulfur-containing gases from penetrating into the interior.

[0054] Although the present invention has been disclosed above with reference to several embodiments, it is not intended to limit the present invention. Those skilled in the art can make various modifications and refinements without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be determined by the appended claims.

[0055] [Symbol Explanation]

[0056] 100: Sulfur-resistant thin-film resistor

[0057] 110:Substrate

[0058] 110A: Upper surface

[0059] 110B: Lower surface

[0060] 110C: Side

[0061] 120A, 120B: First internal electrode

[0062] 120A1, 120B1: Part 1

[0063] 120A2, 120B2: Part Two

[0064] 125: Barrier Layer

[0065] 130: Resistive layer

[0066] 135: Barrier Layer

[0067] 140: Passivation layer

[0068] 150A, 150B: Sulfur-resistant conductive layer

[0069] 150A1, 150B1: First sulfur-resistant conductive part

[0070] 150A2, 150B2: Second sulfur-resistant conductive part

[0071] 152: Trench

[0072] 160: First insulating protective layer

[0073] 170A, 170B: Second internal electrode

[0074] 180: Second insulating protective layer

[0075] 190A, 190B: Back electrode

[0076] 192: Connection Layer

[0077] 195: External electrode pair

[0078] 195A: Copper layer

[0079] 195B: Nickel layer

[0080] 195C: Tin layer

[0081] Cg: Spacing

[0082] d: distance

[0083] L,C1L,RL,PL,CCL1,CCL2,G1L,C2L,G2L,BCL: Length

[0084] W, CW, C1W, RW, PW, CCW, G1W, C2W, G2W, BCW: Width

[0085] X: First direction

[0086] Y: Second direction.

Claims

1. A sulfur-resistant thin-film resistor, characterized in that, Include: A substrate, wherein the substrate is rectangular, the longer side of the substrate along a first direction is greater than the shorter side of the substrate along a second direction, and the first direction is perpendicular to the second direction; The first inner electrode pair is respectively disposed on both ends of the upper surface of the substrate, wherein the two ends of the upper surface are located at opposite ends of the long side of the substrate; A resistive layer is disposed on the upper surface of the substrate and spans a portion of the first inner electrode pair; A passivation layer covers the resistive layer; Two sulfur-resistant conductive layers are respectively disposed on the first inner electrode pair and cover a portion of the passivation layer, wherein the two sulfur-resistant conductive layers contain carbon material, and each of the two sulfur-resistant conductive layers has a trench. The second inner electrode pair is respectively disposed on the two sulfur-resistant conductive layers; Back electrode pairs are respectively disposed at both ends of the lower surface of the substrate, wherein the two ends of the lower surface are located at opposite ends of the long side of the substrate; as well as The outer electrode pairs extend from the second inner electrode pair along the side of the substrate to connect to the back electrode pair.

2. The anti-sulfur thin film resistor according to claim 1, characterized in that, Also includes: A first insulating protective layer covers a portion of the passivation layer and the two sulfur-resistant conductive layers, wherein the first insulating protective layer contacts the first inner electrode pair through the trench; and The second insulating protective layer is disposed on a portion of the first insulating protective layer and the second inner electrode pair.

3. The sulfur-resistant thin-film resistor according to claim 1, characterized in that, Each of the first internal electrode pairs is T-shaped, and each of the first internal electrode pairs comprises: The first part is located at the edges of the two ends of the substrate; as well as The second part connects to the first part, wherein the second part is farther from the edges of the two ends of the substrate than the first part, and the length of the first part along the second direction is greater than the length of the second part along the second direction.

4. The anti-sulfur thin film resistor according to claim 1, characterized in that, Each of the two sulfur-resistant conductive layers has a first sulfur-resistant conductive portion and a second sulfur-resistant conductive portion, and the trench is located between the first sulfur-resistant conductive portion and the second sulfur-resistant conductive portion.

5. The anti-sulfur thin film resistor according to claim 4, characterized in that, The first sulfur-resistant conductive portion of each of the two sulfur-resistant conductive layers is sandwiched between one of the first inner electrode pair and one of the second inner electrode pair, and the second sulfur-resistant conductive portion is disposed on the passivation layer.

6. The anti-sulfur thin film resistor according to claim 1, characterized in that, The width of the groove is 50 μm to 200 μm.

7. The anti-sulfur thin film resistor according to claim 1, characterized in that, The two sulfur-resistant conductive layers contain no less than 15 wt% carbon material, and the carbon material contains graphite or carbon black.

8. The anti-sulfur thin film resistor according to claim 1, characterized in that, Also includes: Two connecting layers are respectively disposed on the side portion of the substrate, wherein the external electrode pairs are respectively disposed on the two connecting layers.

9. The anti-sulfur thin film resistor according to claim 8, characterized in that, Each of the external electrode pairs comprises a copper layer, a nickel layer, and a tin layer, and the copper layer is in solid contact with one of the two connecting layers.

10. A method for manufacturing a sulfur-resistant thin-film resistor, characterized in that, Include: Provide substrate; The first internal electrode pair is formed at both ends of the upper surface of the substrate; A resistive layer is formed on the upper surface of the substrate and spans a portion of the first inner electrode pair; A passivation layer is formed to cover the resistive layer; Two sulfur-resistant conductive layers are formed on the first inner electrode pair and cover a portion of the passivation layer, wherein the two sulfur-resistant conductive layers comprise carbon material and each of the two sulfur-resistant conductive layers has a trench. A first insulating protective layer is formed to cover a portion of the passivation layer and the two sulfur-resistant conductive layers; A second internal electrode pair is formed on the two sulfur-resistant conductive layers and the first insulating protective layer, respectively; A second insulating protective layer is formed on a portion of the first insulating protective layer and the second inner electrode pair; Back electrode pairs are formed at both ends of the lower surface of the substrate; as well as External electrode pairs are formed, extending from the second inner electrode pair along the side of the substrate to connect to the back electrode pair.

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