Substrate processing apparatus, temperature control apparatus and temperature control method

Abstract

The plasma processing system of the present invention includes a supply unit (210), a main body (111), and a control unit (2). The supply unit (210) is configured to supply multiple heat media, each at a different temperature. The main body (111) has multiple flow paths (1112) for each heat media to flow independently, and constitutes the plasma processing system. The control unit (2) is configured to control the discharge of heat media other than the first heat media from the flow paths (1112) when the first heat media among the multiple heat media flows from the supply unit (210) into the flow path (1112).

Description

Technical Field

[0001] This invention relates to a substrate processing apparatus, a temperature control device, and a temperature control method. Background Technology

[0002] Patent document 1 discloses the following: "A temperature control system for controlling the temperature of components used in a semiconductor manufacturing apparatus, comprising: a low-temperature temperature control unit storing a liquid conditioned to a first temperature; a high-temperature temperature control unit storing a liquid conditioned to a second temperature higher than the first temperature; a low-temperature flow path for supplying fluid from the low-temperature temperature control unit; a high-temperature flow path for supplying fluid from the high-temperature temperature control unit; a bypass flow path for circulating fluid; a confluence flow path merging with the low-temperature flow path, the high-temperature flow path, and the bypass flow path at a confluence point for supplying fluid from the confluence of the flow paths; a temperature control unit disposed on or near the component for cooling or heating the component by allowing fluid to flow from the confluence flow path; a variable valve disposed upstream of the confluence point on the low-temperature flow path, the high-temperature flow path, and the bypass flow path; and a control device for controlling the opening degree of the variable valve and adjusting the flow distribution ratio of the low-temperature flow path, the high-temperature flow path, and the bypass flow path."

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2013-105359 Summary of the Invention

[0006] The technical problem that the invention aims to solve

[0007] This invention provides a technique that can shorten the time required for the temperature of constituent components to reach stability.

[0008] Technical solutions for solving the problem

[0009] One embodiment of the substrate processing apparatus of the present invention includes a heat medium supply unit, constituent components, and a control unit. The heat medium supply unit is configured to supply multiple heat media, each having a different temperature. The constituent components form multiple flow paths for the multiple heat media to flow independently, and constitute the substrate processing apparatus. The control unit is configured to control the discharge of heat media other than the first heat media from the flow paths when a first heat media among the multiple heat media flows into the flow path from the heat medium supply unit.

[0010] Invention Effects

[0011] According to the present invention, the time required for the temperature of the constituent components to reach stability can be shortened. Attached Figure Description

[0012] Figure 1 This is a diagram illustrating a structural example of a capacitively coupled plasma processing device.

[0013] Figure 2 This is a diagram illustrating an example of the general structure of a temperature control device according to an embodiment.

[0014] Figure 3A This diagram illustrates the control of the heat medium by the temperature control device implemented in this embodiment.

[0015] Figure 3B This diagram illustrates the control of the heat medium by the temperature control device implemented in this embodiment.

[0016] Figure 3C This diagram illustrates the control of the heat medium by the temperature control device implemented in this embodiment.

[0017] Figure 3D This diagram illustrates the control of the heat medium by the temperature control device implemented in this embodiment.

[0018] Figure 3E This diagram illustrates the control of the heat medium by the temperature control device implemented in this embodiment.

[0019] Figure 4A It is a diagram illustrating the flow of heat in the main body during plasma processing.

[0020] Figure 4B It is a diagram illustrating the flow of heat in the main body during plasma processing.

[0021] Figure 5 This is a diagram illustrating an example of another structure of the temperature control device in the embodiment.

[0022] Figure 6A This is a diagram illustrating an example of another structure of the temperature control device in the embodiment.

[0023] Figure 6B This is a diagram illustrating an example of another structure of the temperature control device in the embodiment.

[0024] Figure 7A This is a diagram illustrating an example of another structure of the temperature control device in the embodiment.

[0025] Figure 7B This is a diagram illustrating an example of another structure of the temperature control device in the embodiment.

[0026] Figure 8 This is a diagram that roughly illustrates another example of the structure of the substrate support portion.

[0027] Figure 9 This is a diagram showing an example of the structure of the main body 111 in the embodiment.

[0028] Figure 10 This is a flowchart illustrating an example of the processing flow of a temperature control method implemented in this way. Detailed Implementation

[0029] Hereinafter, embodiments of the substrate processing apparatus, temperature control device, and temperature control method will be described in detail based on the accompanying drawings. However, the substrate processing apparatus, temperature control device, and temperature control method of the present invention are not limited to the following embodiments.

[0030] A substrate processing apparatus is known in which a flow path is formed in the components constituting the substrate processing apparatus, such as a mounting stage for placing a substrate, and the temperature of the components is controlled by changing the temperature of the heat medium circulating in the flow path.

[0031] However, when the temperature of a component is increased or decreased by changing the temperature of the circulating heat medium in the flow path, it takes time for the component temperature to stabilize. Therefore, a technology is needed to shorten the time required for the component temperature to stabilize.

[0032] (Implementation Method)

[0033] (Structure of the substrate processing device)

[0034] An example of the substrate processing apparatus of the present invention will be described. In the embodiments described below, a plasma processing system employing a system structure will be used as an example of the substrate processing apparatus of the present invention.

[0035] The following describes a structural example of a plasma processing system. Figure 1 This is a diagram illustrating a structural example of a capacitively coupled plasma processing device.

[0036] The plasma processing system includes a capacitively coupled plasma processing device 1 and a control unit 2. The capacitively coupled plasma processing device 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. Additionally, the plasma processing device 1 includes a substrate support 11 and a gas inlet. The gas inlet is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas inlet includes a spray head 13. The substrate support 11 is disposed within the plasma processing chamber 10. The spray head 13 is disposed above the substrate support 11. In one embodiment, the spray head 13 constitutes at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the spray head 13, the sidewall 10a of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 has at least one gas supply port for supplying at least one processing gas to the plasma processing space 10s and at least one gas outlet for discharging gas from the plasma processing space. The plasma processing chamber 10 is grounded. The spray head 13 and the substrate support 11 are electrically insulated from the shell of the plasma processing chamber 10.

[0037] The substrate support portion 11 includes a main body portion 111 and a ring assembly 112. In an embodiment, the main body portion 111 corresponds to the constituent components, mounting stage, and object component of the present invention. The main body portion 111 has a central region 111a for supporting a substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 111b of the main body portion 111 surrounds the central region 111a of the main body portion 111 when viewed from above. The substrate W is disposed on the central region 111a of the main body portion 111, and the ring assembly 112 is disposed on the annular region 111b of the main body portion 111 in such a way that it surrounds the substrate W on the central region 111a of the main body portion 111. Therefore, the central region 111a is also referred to as the substrate support surface for supporting the substrate W, and the annular region 111b is also referred to as the annular support surface for supporting the ring assembly 112. In an embodiment, the central region 111a corresponds to the mounting surface of the present invention.

[0038] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive component. The conductive component of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a ceramic component 1111a and an electrostatic electrode 1111b disposed within the ceramic component 1111a. The ceramic component 1111a has a central region 111a. In one embodiment, the ceramic component 1111a also has an annular region 111b. Alternatively, the annular region 111b may be formed by other components surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating component. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating component, or on both the electrostatic chuck 1111 and the annular insulating component. Alternatively, at least one RF / DC electrode coupled to the RF (Radio Frequency) power supply 31 and / or DC (Direct Current) power supply 32, described later, may be disposed within the ceramic component 1111a. In this case, the at least one RF / DC electrode functions as a lower electrode. When the bias RF signal and / or DC signal, described later, are supplied to the at least one RF / DC electrode, the RF / DC electrode is also referred to as a bias electrode. Furthermore, the conductive components of the base 1110 and the at least one RF / DC electrode may also function as multiple lower electrodes. Additionally, the electrostatic electrode 1111b may also function as a lower electrode. Therefore, the substrate support portion 11 includes at least one lower electrode.

[0039] The ring assembly 112 includes one or more annular components. In one embodiment, the one or more annular components include one or more edge rings and at least one cover ring. The edge rings are formed of a conductive or insulating material, and the cover rings are formed of an insulating material.

[0040] Additionally, the substrate support 11 may also include a temperature control module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature control module may include a heater, a heat transfer medium, a flow path, or a combination thereof.

[0041] In one embodiment, the substrate support portion 11 has multiple flow paths 1112 for the flow of heat media such as brine or gas, and one or more heaters are disposed within the ceramic component 1111a of the electrostatic chuck 1111. Alternatively, the substrate support portion 11 may include a heat transfer gas supply portion configured to supply heat transfer gas to the gap between the back surface of the substrate W and the central region 111a. The multiple flow paths 1112 do not intersect, and the heat media in each flow path 1112 can flow independently without mixing. In this embodiment, the main body 111 of the substrate support portion 11 has two flow paths 1112a and 1112b formed internally. Flow paths 1112a and 1112b are formed on the lower side of the central region 111a in a non-intersecting manner. Flow paths 1112a and 1112b are formed side-by-side with a partition wall between them. One end of flow path 1112a is connected to a pipe 201a, and the other end is connected to a pipe 202a. One end of flow path 1112b is connected to pipe 201b, and the other end is connected to pipe 202b. Pipes 201a, 201b and pipes 202a, 202b are connected to temperature control device 200. Temperature control device 200 controls the temperature of main body 111 by controlling the hot medium flowing through flow paths 1112a, 1112b via pipes 201a, 201b and pipes 202a, 202b.

[0042] The spray head 13 is configured to introduce at least one process gas from the gas supply unit 20 into the plasma processing space 10s. The spray head 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and a plurality of gas inlets 13c. The process gas supplied to the gas supply port 13a is introduced into the plasma processing space 10s through the gas diffusion chamber 13b and the plurality of gas inlets 13c. Additionally, the spray head 13 includes at least one upper electrode. Furthermore, the gas inlet unit may also include, in addition to the spray head 13, one or more side gas injectors (SGIs) installed at one or more openings formed in the sidewall 10a.

[0043] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from a corresponding gas source 21 to a spray head 13 via a corresponding flow controller 22. Each flow controller 22 may, for example, include a mass flow controller or a pressure-controlled flow controller. The gas supply unit 20 may also include one or more flow modulation devices for modulating or pulsedizing the flow rate of the at least one process gas.

[0044] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This generates plasma from at least one processing gas supplied to the plasma processing space 10. Thus, the RF power supply 31 functions as at least part of a plasma generation unit configured to generate plasma from one or more processing gases within the plasma processing chamber 10. Furthermore, by supplying a bias RF signal to at least one lower electrode, a bias potential is generated on the substrate W, attracting ionic components from the generated plasma to the substrate W.

[0045] In one embodiment, the RF power supply 31 includes a first RF generation unit 31a and a second RF generation unit 31b. The first RF generation unit 31a is configured to be coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit, and is capable of generating a generation source RF signal (generation source RF power) for plasma generation. In one embodiment, the generation source RF signal has a frequency in the range of 10MHz to 150MHz. In one embodiment, the first RF generation unit 31a may also be configured to generate multiple generation source RF signals with different frequencies. The generated one or more generation source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0046] The second RF generation unit 31b is configured to be coupled to at least one lower electrode via at least one impedance matching circuit, and is capable of generating a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than that of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generation unit 31b may also be configured to generate multiple bias RF signals with different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In addition, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0047] Additionally, the power supply 30 may include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generating unit 32a and a second DC generating unit 32b. In one embodiment, the first DC generating unit 32a is configured to be connected to at least one lower electrode and is capable of generating a first DC signal. The generated first bias DC signal is applied to at least one lower electrode. In one embodiment, the second DC generating unit 32b is configured to be connected to at least one upper electrode and is capable of generating a second DC signal. The generated second DC signal is applied to at least one upper electrode.

[0048] In various embodiments, at least one of the first and second DC signals can be pulsed. In this case, a voltage pulse sequence is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses can have rectangular, trapezoidal, triangular, or combinations thereof pulse waveforms. In one embodiment, a waveform generation unit for generating a voltage pulse sequence from the DC signals is connected between the first DC generation unit 32a and at least one lower electrode. Therefore, the first DC generation unit 32a and the waveform generation unit constitute a voltage pulse generation unit. In the case where the voltage pulse generation unit is constituted by the second DC generation unit 32b and the waveform generation unit, the voltage pulse generation unit is connected to at least one upper electrode. The voltage pulses can have positive or negative polarity. In addition, the voltage pulse sequence can include one or more positive voltage pulses and one or more negative voltage pulses in one cycle. Furthermore, the first and second DC generation units 32a, 32b can be provided together with the RF power supply 31, or the first DC generation unit 32a can be provided instead of the second RF generation unit 31b.

[0049] The exhaust system 40 can be connected, for example, to a gas outlet 10e located at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure regulating valve can be used to regulate the pressure within the plasma processing space 10s. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0050] The control unit 2 is capable of processing computer-executable commands to cause the plasma processing apparatus 1 to perform the various steps described herein. The control unit 2 may be configured to control various elements of the plasma processing apparatus 1 to perform the various steps described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 may be implemented, for example, by a computer 2a. The processing unit 2a1 may be configured to perform various control actions by reading a program from the storage unit 2a2 and executing the read program. The program may be pre-stored in the storage unit 2a2 or retrieved via a medium when needed. The retrieved program is stored in the storage unit 2a2 and read and executed by the processing unit 2a1. The medium may be various storage media readable by the computer 2a, or a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 can communicate with the plasma processing device 1 via a communication line such as a LAN (Local Area Network).

[0051] [Structure of temperature control device 200]

[0052] Next, the general structure of the temperature control device 200 that controls the temperature of the main body 111 of the substrate support 11 will be described. Figure 2 This is a diagram illustrating an example of the schematic structure of the temperature control device 200 according to an embodiment. Figure 2 The structure of the main body 111 is shown in a simplified manner.

[0053] The temperature control device 200 includes a supply unit 210. In this embodiment, the supply unit 210 corresponds to the heat medium supply unit of the present invention. The supply unit 210 is configured to supply multiple heat media, each with a different temperature. The type of heat medium, whether liquid or gas, is selected according to the temperature to be adjusted. In this embodiment, the case where the heat medium is a liquid is described. As the heat medium, a liquid material that is in a liquid state at the temperature to be adjusted, has fluidity, and high stability and thermal conductivity is used. Furthermore, when supplying a generation source RF signal or a bias RF signal to the plasma processing chamber 10, a liquid material with high insulation properties is used as the heat medium. The multiple heat media can be the same liquid material or different liquid materials. Examples of liquid heat media include, for example, cooling water, antifreeze, and organic solvents. Furthermore, examples of organic solvents include fluorine fluids, such as Galden (registered trademark), Novec 7200 (registered trademark), Fluorinert (registered trademark), etc. Furthermore, the heat medium is not limited to a liquid; it can also be a gas such as atmosphere, nitrogen (N2), or carbon dioxide (CO2) that has been controlled at a specified temperature. Additionally, it can be a two-phase fluid consisting of a portion of a liquid heat medium vaporized and mixed with the liquid. The supply unit 210 is configured to store multiple heat media each conditioned to a different temperature and to supply multiple heat media separately. In this embodiment, the supply unit 210 has two storage sections 211a and 211b. Pipes 201a and 202a are connected to storage section 211a. Pipes 201b and 202b are connected to storage section 211b.

[0054] Storage section 211a is configured to supply a heat medium at a first temperature. Storage section 211b is configured to supply a heat medium at a second temperature higher than the first temperature. For example, storage section 211a has a container for storing the heat medium, and the temperature of the heat medium is controlled to the first temperature by controlling the temperature of the container. Storage section 211a supplies the heat medium at the first temperature from the container to piping 201a. Storage section 211b has a container for storing the heat medium, and the temperature of the heat medium is controlled to the second temperature higher than the first temperature by controlling the temperature of the container. Storage section 211b supplies the heat medium at the second temperature from the container to piping 201b.

[0055] Pipe 201a transports the heat medium from the storage section 211a to the flow path 1112a. Pipe 201b transports the heat medium from the storage section 211b to the flow path 1112b. Pipe 202a transports the heat medium from the flow path 1112a to the storage section 211a. Pipe 202b transports the heat medium from the flow path 1112b to the storage section 211b. A valve 221a is provided in pipe 201a to open and close pipe 201a. A valve 221b is provided in pipe 201b to open and close pipe 201b. A valve 222a is provided in pipe 202a to open and close pipe 202a. A valve 222b is provided in pipe 202b to open and close pipe 202b. Hereinafter, pipes 201a and 201b will sometimes be collectively referred to as pipe 201, and pipes 202a and 202b will sometimes be collectively referred to as pipe 202. Furthermore, valves 221a and 221b will sometimes be collectively referred to as valve 221, and valves 222a and 222b will sometimes be collectively referred to as valve 222. In an embodiment, pipe 201 corresponds to the first pipe of the present invention, and pipe 202 corresponds to the second pipe of the present invention. Furthermore, in an embodiment, valve 221 corresponds to the first valve of the present invention, and valve 222 corresponds to the fourth valve of the present invention.

[0056] Pipes 201a and 201b are respectively provided with branch pipes 203a and 203b. Pipe 203a branches from the side of valve 221a of pipe 201a near flow path 1112a. Pipe 203b branches from the side of valve 221b of pipe 201b near flow path 1112b. A valve 223a capable of opening and closing pipe 203a is provided in pipe 203a. A valve 223b capable of opening and closing pipe 203b is provided in pipe 203b. Hereinafter, pipes 203a and 203b are sometimes collectively referred to as pipe 203, and valves 223a and 223b are collectively referred to as valve 223. In the embodiment, pipe 203 corresponds to the third pipe of the present invention, and valve 223 corresponds to the second valve of the present invention.

[0057] Pipes 203a and 203b are connected to container 212. Container 212 is positioned lower than the main body 111 and is capable of storing a heat medium. In this embodiment, container 212 corresponds to the first container of the present invention.

[0058] Pipes 204a and 204b are connected to container 212. A valve 224a is provided on pipe 204a, capable of opening and closing pipe 204a. A valve 224b is provided on pipe 204b, capable of opening and closing pipe 204b. Pipe 204a is connected to pipe 202a on the side of pipe 202a closer to the reservoir portion 211a than valve 222a. Pipe 204b is connected to pipe 202b on the side of pipe 202b closer to the reservoir portion 211b than valve 222b. Hereinafter, pipes 204a and 204b will be collectively referred to as pipe 204, and valves 224a and 224b will be collectively referred to as valve 224. In this embodiment, pipe 204 corresponds to the fourth pipe of the present invention, and valve 224 corresponds to the third valve of the present invention.

[0059] In addition, in order to store the heat medium circulating from the storage section 211a and the heat medium circulating from the storage section 211b separately, multiple containers 212 may be provided. For example, two containers 212 may be provided, with pipes 203a and 204a connected to one container 212 and pipes 203b and 204b connected to the other container 212.

[0060] Valves 221a, 221b, 222a, 222b, 223a, 223b, and 224a, 224b can each be switched on and off according to the control from the control unit 2. The control unit 2 controls the hot medium flowing into flow paths 1112a and 1112b by controlling the opening and closing of valves 221a, 221b, 222a, 222b, 223a, 223b, and 224a, 224b.

[0061] [Control of the heat medium]

[0062] Next, the control of the heat medium using the temperature control device 200 will be explained. Figures 3A-3E This diagram illustrates the control of the heat medium using the temperature control device 200 according to the embodiment. Additionally, in Figures 3A-3E In the diagram, valves in the open state are depicted on a white background, while valves in the closed state are depicted in black.

[0063] The supply unit 210 supplies multiple heat media, each with a different temperature. For example, the supply unit 210 supplies heat media at a first temperature from the storage unit 211a to the piping 201a, and supplies heat media at a second temperature from the storage unit 211b to the piping 201b.

[0064] When the heat medium at the first temperature circulates in the main body 111, the control unit 2 controls valves 221a and 222a to the open state, and valves 223a and 224a to the closed state. Thus, as... Figure 3AAs shown, a heat medium at a first temperature supplied from the storage section 211a flows through the flow path 1112a via pipe 201a. The heat medium discharged from the flow path 1112a after passing through it returns to the storage section 211a via pipe 202a. By circulating the heat medium at the first temperature within the main body 111, the temperature of the main body 111 is controlled by the heat medium flowing through the flow path 1112a.

[0065] Next, the control for switching the circulating heat medium in the main body 111 will be explained. When it is necessary to switch the circulating heat medium in the main body 111 from a heat medium at a first temperature to a heat medium at a second temperature, the control unit 2 controls valves 221a and 222a to be closed, and valves 221b and 222b to be open. Thus, as... Figure 3B As shown, the second-temperature heat medium supplied from the storage section 211b flows through the flow path 1112b via the piping 201b. The heat medium discharged from the flow path 1112a after passing through the flow path 1112b returns to the storage section 211b via the piping 202b. On the other hand, since the valve 221a is closed, the flow of the first-temperature heat medium in the flow path 1112a stops. By circulating the second-temperature heat medium in the main body 111, the temperature of the main body 111 is controlled by the heat medium flowing in the flow path 1112b.

[0066] Even after valves 221b and 222b are in the open state, heat medium remains stored in flow path 1112a. In the main body 111, the heat from the second-temperature heat medium flowing in flow path 1112b is absorbed by the heat medium stored in flow path 1112a via the main body 111. Furthermore, the heat capacity of the main body 111 increases accordingly due to the heat medium stored in flow path 1112a. As a result, the temperature change in the main body 111 becomes slow, and it takes time for the temperature to stabilize.

[0067] Therefore, the control unit 2 is configured to, when a first heat medium among a plurality of heat media flows into the flow path 1112, control the discharge of heat media other than the first heat medium from the flow path 1112. For example, when a heat medium at a second temperature flows into the flow path 1112b, the control unit 2 controls the discharge of heat medium from the flow path 1112a. Furthermore, when a heat medium at a first temperature flows into the flow path 1112a, the control unit 2 controls the discharge of heat medium from the flow path 1112b. For example, in cases such as... Figure 3B When the flow of the hot medium is switched, allowing the hot medium at the second temperature to flow into flow path 1112b, the control unit 2 controls valve 223a to be in the open state. Thus, as shown... Figure 3CAs shown, the heat medium stored in flow path 1112a flows into container 212 via pipes 201a and 203a, and is discharged from flow path 1112a. The heat medium flowing into container 212 is stored in container 212. Thus, heat from the second-temperature heat medium flowing in flow path 1112b is suppressed and absorbed by the heat medium stored in flow path 1112a via the main body 111. Furthermore, the increase in heat capacity of the main body 111 due to the heat medium being stored in flow path 1112a can be suppressed. As a result, the time required for the temperature of the main body 111 to stabilize can be shortened.

[0068] Furthermore, when the hot medium is discharged from the flow path 1112, the pressure inside the container 212 can be reduced. For example, as... Figure 3C As shown, an exhaust section 231 for venting air from the container 212 is connected to the container 212. In this embodiment, the exhaust section 231 corresponds to the first pressure-reducing section of the present invention. When the hot medium is discharged from the flow paths 1112a and 1112b, the control unit 2 controls the exhaust section 231 to vent air from the container 212, thereby reducing the pressure inside the container 212. The exhaust section 231 may be the exhaust system 40 or an exhaust device separately provided outside the exhaust system 40. When the hot medium is discharged from the flow paths 1112a and 1112b, by reducing the pressure inside the container 212, the hot medium in the flow paths 1112a and 1112b is attracted to the container 212 and thus quickly discharged from the flow path 1112.

[0069] The heat medium stored in container 212 can be returned to the supply section through the following control. For example, in the case of returning the heat medium stored in container 212 to the storage section 211a, as follows: Figure 3D As shown, control unit 2 controls valve 224a to the open state. Additionally, when returning the hot medium stored in container 212 to storage section 211a, control unit 2 preferably also controls valve 223a to the closed state. Figure 3D During the circulation of the heat medium at the second temperature in the main body 111, the control unit 2 controls valve 224a to the open state and valve 223a to the closed state. As a result, the heat medium stored in the container 212 flows into the storage section 211a via pipes 204a and 202a.

[0070] Furthermore, when allowing the hot medium stored in container 212 to flow into storage sections 211a and 211b, the container 212 can be pressurized. For example, Figure 3DAs shown, a gas supply unit 241 for supplying purge gas is connected to container 212. In this embodiment, the gas supply unit 241 corresponds to the first pressurization unit of the present invention. When the hot medium stored in container 212 flows into storage sections 211a and 211b, the control unit 2 controls the gas supply unit 241 to supply purge gas or the like to container 212 to pressurize the container 212. Dry air can be an example of a purge gas. The gas supply unit 241 can be a gas supply unit 20 or a separate gas supply unit provided outside of the gas supply unit 20. By pressurizing the container 212, the hot medium stored in container 212 is pushed by the pressure inside container 212, thereby rapidly flowing into storage sections 211a and 211b. When the return of the hot medium stored in container 212 to storage section 211a ends, as... Figure 3E As shown, the control unit 2 controls valve 224a to be in the closed state.

[0071] By using the same control method as described above, control unit 2 can switch the heat medium circulating in main body 111 from a heat medium at a second temperature to a heat medium at a first temperature. For example, control unit 2 controls valves 221a and 222a to be open, and valves 221b and 222b to be closed. Furthermore, when heat medium at the first temperature flows into flow path 1112a, control unit 2 controls the discharge of heat medium from flow path 1112b. For example, control unit 2 controls valve 223b to be open. Furthermore, when heat medium stored in container 212 is returned to storage section 211b, control unit 2 controls valve 224b to be open.

[0072] Next, the flow of heat in the main body 111 during plasma processing will be explained. Figure 4A and Figure 4B This diagram illustrates the heat flow within the main body 111 during plasma processing. In the plasma processing apparatus 1, during plasma processing, heat is transferred from the plasma to the main body 111 via the substrate W or directly. The temperatures of the multiple heat transfer media supplied by the supply unit 210 are set to ensure that the substrate W reaches a predetermined temperature, taking into account the temperature rise caused by heat input from the plasma or heating by a heater installed in the main body 111. For example, when the plasma processing apparatus 1 performs processes A and B through plasma processing, a first temperature is set to ensure that the substrate W reaches a temperature suitable for process A. A second temperature is set to ensure that the substrate W reaches a temperature suitable for process B. Figure 4A and Figure 4B This illustrates a scenario where, after process A, in order to implement process B, the heat medium is circulated in flow path 1112b and discharged from flow path 1112a. Figure 4AThis illustrates a situation where, although the heat medium is discharged from flow path 1112a, a portion of the heat medium remains in flow path 1112a. Figure 4B This illustrates the case where the heat medium is discharged from flow path 1112a, and the heat medium is completely removed from flow path 1112a. In process B, heat is removed by utilizing the heat medium circulating in flow path 1112b while heat is input from the plasma, allowing the substrate W to reach a temperature suitable for process B. Figure 4B Thus, with the heat medium completely removed from flow path 1112a, heat from the plasma is introduced into the heat medium of flow path 1112b. This shortens the time required to stabilize the substrate W to a temperature suitable for process B. Furthermore, as... Figure 4A Thus, even if a portion of the heat transfer medium remains in flow path 1112a, the liquid surface of the heat transfer medium leaves the upper surface of flow path 1112a, creating a space without heat transfer medium on the central region 111a side, thus hindering heat transfer. Therefore, the heat from the plasma is primarily input into the heat transfer medium of flow path 1112b. Therefore, as... Figure 4A In this way, even if a portion of the heat medium remains in the flow path 1112a, the time required for the temperature of the main body 111 to stabilize can be shortened, and the time required for the substrate W to stabilize to a temperature suitable for process B can be shortened.

[0073] Furthermore, the structure of the temperature control device 200 described above is one example and is not limited thereto. Next, examples of other structures of the temperature control device 200 will be described.

[0074] Figure 5 This is a diagram illustrating an example of another structure of the temperature control device 200 in the embodiment. Figure 5 The temperature control device 200 shown is Figure 2 Since the temperature control device 200 shown is partly the same, the same reference numerals will be used for the same parts and the descriptions will be omitted. The descriptions will mainly focus on the different parts.

[0075] exist Figure 5 In the temperature control device 200 shown, piping 203a is connected to piping 209a, and piping 203b is connected to piping 209b. Pipes 209a and 209b are connected to a gas supply unit 216. The gas supply unit 216 can supply purge gas to piping 209a and 209b respectively. The gas supply unit 216 can be a gas supply unit 20, or it can be a gas supply unit separately provided outside of the gas supply unit 20.

[0076] When the heat medium at the first temperature circulates in the main body 111, the control unit 2 controls valve 221a to be open and valves 221b and 223a to be closed. Thus, the heat medium at the first temperature circulates through pipes 201a and 202a in the storage section 211a and the flow path 1112a of the main body 111. Furthermore, when the heat medium at the first temperature flows into the flow path 1112a, the control unit 2 controls the discharge of the heat medium from the flow path 1112b. For example, as... Figure 5 As shown, control unit 2 controls valve 223b to the open state. Consequently, the purge gas supplied from gas supply unit 216 flows through pipes 209b, 203b, 201b, flow path 1112b, and pipe 202b. Through the flow of the purge gas, the hot medium returns to the storage unit 211a. Thus, the hot medium is discharged from flow path 1112b. As a result, the time required for the temperature of the main body 111 to stabilize is shortened.

[0077] By using the same control method as described above, control unit 2 can switch the heat medium circulating in main body 111 from a heat medium at a first temperature to a heat medium at a second temperature. For example, control unit 2 controls valve 221b to be open and valves 221a and 223b to be closed. Furthermore, when the heat medium at the second temperature flows into flow path 1112a, control unit 2 controls the discharge of the heat medium from flow path 1112b. For example, control unit 2 controls valve 223a to be open.

[0078] Figure 6A and Figure 6B This is a diagram illustrating an example of another structure of the temperature control device 200 in the embodiment. Figure 6A and Figure 6B The temperature control device 200 shown is Figure 2 and Figure 5 Since the temperature control device 200 shown is partly the same, the same reference numerals will be used for the same parts and the descriptions will be omitted. The descriptions will mainly focus on the different parts.

[0079] exist Figure 6A and Figure 6B Pipes 202a and 202b shown are respectively provided with branch pipes 205a and 205b. Pipe 205a branches from the side of the valve 222a of pipe 202a near the flow path 1112a. Pipe 205b branches from the side of the valve 222b of pipe 202b near the flow path 1112b. Hereinafter, pipes 205a and 205b are sometimes collectively referred to as pipe 205. In the embodiment, pipe 205 corresponds to the fifth pipe of the present invention.

[0080] A valve 225a capable of opening and closing the piping 205a is provided on the piping 205a. A valve 225b capable of opening and closing the piping 205b is provided on the piping 205b. Hereinafter, valves 225a and 225b will sometimes be collectively referred to as valve 225. In an embodiment, valve 225 corresponds to the fifth valve of the present invention.

[0081] Pipe 205a is connected to container 220a. Pipe 205b is connected to container 220b. Containers 220a and 220b are each capable of storing a heat medium. Hereinafter, containers 220a and 220b are sometimes collectively referred to as container 220. In an embodiment, container 220 corresponds to the second container of the present invention.

[0082] When the heat medium at the first temperature circulates in the main body 111, the control unit 2 controls valves 221a and 222a to be open, and controls valves 221b, 223a, and 225a to be closed. Thus, the heat medium at the first temperature circulates through pipes 201a and 202a in the storage section 211a and the flow path 1112a of the main body 111. Furthermore, when the heat medium at the first temperature flows into the flow path 1112a, the control unit 2 controls the discharge of the heat medium from the flow path 1112b. For example, as... Figure 6A As shown, control unit 2 controls valves 223b and 225b to the open state. Consequently, the purge gas supplied from gas supply unit 216 flows through pipes 209b, 203b, 201b, flow path 1112b, pipe 202b, and pipe 205b. Through the flow of the purge gas, the hot medium flows into container 220b. As a result, the hot medium is discharged from flow path 1112b. Consequently, the time required for the temperature of the main body 111 to stabilize is shortened.

[0083] Furthermore, when the hot medium is discharged from flow paths 1112a and 1112b, the pressure inside containers 220a and 220b can be reduced. For example, as Figure 6AAs shown, an exhaust section 232 for venting air from containers 220a and 220b is connected to containers 220a and 220b. In this embodiment, the exhaust section 232 corresponds to the second pressure-reducing section of the present invention. When a hot medium is discharged from flow path 1112a, the control unit 2 controls the exhaust section 232 to vent air from container 220a, thereby reducing pressure inside container 220a. Furthermore, when a hot medium is discharged from flow path 1112b, the control unit 2 controls the exhaust section 232 to vent air from container 220b, thereby reducing pressure inside container 220b. The exhaust section 232 can be the exhaust system 40 or an exhaust device separately provided outside the exhaust system 40. When the hot medium is discharged from flow paths 1112a and 1112b, the hot medium in flow paths 1112a and 1112b is attracted to the containers 220a and 220b by depressurizing the container 220a and 220b, and is then quickly discharged from flow paths 1112a and 1112b.

[0084] The heat medium stored in container 220b can be returned to supply unit 210 by the following control. For example, in the case of returning the heat medium stored in container 220b to storage unit 211b, as follows: Figure 6B As shown, the control unit 2 controls valve 223b to the closed state and valves 222b and 225b to the open state. As a result, the heat medium stored in container 220b flows into storage section 211b via pipes 205b and 202b.

[0085] Alternatively, containers 220a and 220b can also be a single container 220. Furthermore, when the hot medium stored in containers 220a and 220b flows into the storage sections 211a and 211b, the containers 220a and 220b can be pressurized. For example, as... Figure 6BAs shown, a gas supply unit 242 for supplying purge gas is connected to containers 220a and 220b. In this embodiment, the gas supply unit 242 corresponds to the second pressurization unit of the present invention. When a hot medium stored in container 220a flows into the storage section 211a, the control unit 2 controls the gas supply unit 242 to supply purge gas or the like to container 220a to pressurize the container 220a. When a hot medium stored in container 220b flows into the storage section 211b, the control unit 2 controls the gas supply unit 242 to supply purge gas or the like to container 220b to pressurize the container 220b. The gas supply unit 242 may be the gas supply unit 20, or it may be a gas supply unit separately provided outside of the gas supply unit 20. By pressurizing containers 220a and 220b, the heat medium stored in containers 220a and 220b is propelled by the pressure within containers 220a and 220b, thereby rapidly flowing into storage sections 211a and 211b. After the return of the heat medium stored in container 220a to storage section 211a is completed, control unit 2 closes valve 225a, and after the return of the heat medium stored in container 220b to storage section 211b is completed, it closes valve 225b.

[0086] By using the same control method as described above, control unit 2 can switch the heat medium circulating in main body 111 from a heat medium at a first temperature to a heat medium at a second temperature. For example, control unit 2 controls valves 221b and 222b to be open, and controls valves 221a, 223b, and 225b to be closed. Furthermore, when the heat medium at the second temperature flows into flow path 1112a, control unit 2 controls the discharge of the heat medium from flow path 1112b. For example, control unit 2 controls valves 223a and 225a to be open. Furthermore, when the heat medium stored in container 220a is returned to storage section 211b, control unit 2 controls valve 223a to be closed, and controls valves 222a and 225a to be open.

[0087] Figure 7A and Figure 7B This is a diagram illustrating an example of another structure of the temperature control device 200 in the embodiment. Figure 7A and Figure 7B The temperature control device 200 shown is Figure 6A and Figure 6B Since the temperature control device 200 shown is partly the same, the same reference numerals will be used for the same parts and the descriptions will be omitted. The descriptions will mainly focus on the different parts.

[0088] exist Figure 7A and Figure 7BIn the temperature control device 200 shown, container 220a is connected to pipe 206a, and container 220b is connected to pipe 206b. A valve 226a is provided on pipe 206a, capable of opening and closing pipe 206a. A valve 226b is provided on pipe 206b, capable of opening and closing pipe 206b. Pipe 206a is connected to pipe 202a on the side of pipe 202a closer to the reservoir portion 211a than valve 222a. Pipe 206b is connected to pipe 202b on the side of pipe 202b closer to the reservoir portion 211b than valve 222b. Hereinafter, pipes 206a and 206b will sometimes be collectively referred to as pipe 206, and valves 226a and 226b will sometimes be collectively referred to as valve 226. In this embodiment, pipe 206 corresponds to the sixth pipe of the present invention, and valve 226 corresponds to the sixth valve of the present invention.

[0089] When the heat medium at the first temperature circulates in the main body 111, the control unit 2 controls valves 221a and 222a to be open, and controls valves 221b, 223a, and 225a to be closed. Thus, the heat medium at the first temperature circulates through pipes 201a and 202a in the storage section 211a and the flow path 1112a of the main body 111. Furthermore, when the heat medium at the first temperature flows into the flow path 1112a, the control unit 2 controls the discharge of the heat medium from the flow path 1112b. For example, as... Figure 7A As shown, control unit 2 controls valves 223b and 225b to the open state and valve 222b to the closed state. As a result, the purge gas supplied from gas supply unit 216 flows through pipes 209b, 203b, 201b, flow path 1112b, 202b, and 205b. Through the flow of the purge gas, the hot medium flows into container 220b. Consequently, the time required for the temperature of the main body 111 to stabilize is shortened.

[0090] Furthermore, when the hot medium is discharged from flow paths 1112a and 1112b, the pressure inside containers 220a and 220b can be reduced. For example, with Figure 6A Similarly, an exhaust section 232 can be connected to containers 220a and 220b to exhaust air from the containers 220a and 220b.

[0091] The heat medium stored in container 220b can be returned to supply unit 210 by the following control. For example, in the case of returning the heat medium stored in container 220b to storage unit 211b, as follows: Figure 7B As shown, the control unit 2 controls valves 223b, 222b, and 225b to be closed, and controls valve 226b to be open. As a result, the heat medium stored in container 220b flows into storage section 211b via pipes 206b and 202b.

[0092] Alternatively, containers 220a and 220b can also be a single container 220. Furthermore, when the hot medium stored in containers 220a and 220b flows into the storage sections 211a and 211b, the containers 220a and 220b can be pressurized. For example, with... Figure 6B Similarly, a gas supply unit 242 can be connected to containers 220a and 220b to pressurize the contents of containers 220a and 220b.

[0093] By using the same control method as described above, control unit 2 can switch the heat medium circulating in main body 111 from a heat medium at a first temperature to a heat medium at a second temperature. For example, control unit 2 controls valves 221b and 222b to be open, and controls valves 221a, 223b, and 225b to be closed. Furthermore, when the heat medium at the second temperature flows into flow path 1112b, control unit 2 controls the discharge of the heat medium from flow path 1112a. For example, control unit 2 controls valves 223a and 225a to be open, and controls valve 222a to be closed. Furthermore, when the heat medium stored in container 220a is returned to storage section 211a, control unit 2 controls valves 223a, 222a, and 225a to be closed, and controls valve 226a to be open.

[0094] Furthermore, in the above embodiment, the example described is that the temperature control device 200 switches between two heat media at different temperatures. However, the technology of the present invention is not limited to this. The temperature control device 200 may also be configured to switch between three or more heat media at different temperatures. Figure 8 This is a diagram that roughly represents another example of the structure of the main body 111. Figure 8 The structure of the main body 111 is shown in a simplified manner. Figure 8 The main body 111 shown has three flow paths 1112 (1112a, 1112b, 1112c) formed inside. Flow paths 1112a, 1112b, and 1112c are formed on the lower side of the central region 111a in a non-intersecting manner. A pipe 201a is connected to one end of flow path 1112a, and a pipe 202a is connected to the other end. A pipe 201b is connected to one end of flow path 1112b, and a pipe 202b is connected to the other end. A pipe 201c is connected to one end of flow path 1112c, and a pipe 202c is connected to the other end. Branch pipes 203a, 203b, and 203c are respectively provided on pipes 202a, 202b, and 202c. A valve 223a capable of opening and closing pipe 203a is provided on pipe 203a. A valve 223b is installed in pipe 203b to open and close pipe 203b. A valve 223c is installed in pipe 203c to open and close pipe 203c. Figure 8The main body 111 of the structure shown can supply three types of heat media. The temperature control device 200 described above is configured to add a flow path to supply three types of heat media, allowing for the switching of three heat media at different temperatures into the flow path. Figure 8 The flow paths 1112a, 1112b, and 1112c of the main body 111 are shown.

[0095] Furthermore, the main body 111 can also be configured to reduce heat transfer between the multiple flow paths 1112. For example, the main body 111 can be configured to reduce heat transfer by providing a portion with a higher thermal resistance than the surrounding area in the partition wall portion between the multiple flow paths 1112. Figure 9 This is a diagram showing an example of the structure of the main body 111 in the embodiment. Figure 9 The main body 111 shown has flow paths 1112a and 1112b formed therein. Flow paths 1112a and 1112b are formed side by side, and a partition wall 1113 is provided between each of the flow paths 1112a and 1112b. A gap 1114, which is a portion with higher thermal resistance than the surrounding area, is provided in each of the partition walls 1113. The gap 1114 extends from the back side 111c of the central region 111a of the main body 111 through the flow paths 1112a and 1112b to the side of the flow paths 1112a and 1112b closer to the central region 111a. By providing gaps 1114 between the flow paths 1112a and 1112b, the heat transfer between the flow paths 1112a and 1112b is reduced, and heat transfer between the heat medium in the flow paths 1112a and 1112b can be suppressed.

[0096] Next, the processing flow of the temperature control method of the embodiment will be explained. Figure 10 This is a flowchart illustrating an example of the processing flow of the temperature control method in the embodiment. The processing of the temperature control method in the embodiment is performed when switching the heat medium circulating in the main body 111.

[0097] The control unit 2 controls the flow of a first heat medium from the supply unit 210 into the flow path 1112 of the main body 111, which has multiple flow paths 1112 for which multiple heat media can flow independently (step S10). For example, the control unit 2 controls the flow of a heat medium at a first temperature from the supply unit 210 into the flow path 1112a formed in the main body 111.

[0098] When the first heat medium flows into the flow path 1112, the control unit 2 controls the discharge of heat medium other than the first heat medium from the flow path 1112 (step S11) and ends the process. For example, the control unit 2 controls the discharge of heat medium from the flow path 1112b formed in the main body 111.

[0099] Furthermore, the above-described embodiment illustrates, as an example, that as a component constituting the plasma processing apparatus 1, a plurality of flow paths 1112 are formed in the main body portion 111 on which the substrate W is mounted, and the temperature of the main body portion 111 is controlled by controlling the heat medium flowing into each flow path 1112. However, the technology of the present invention is not limited to this. For example, multiple flow paths may also be formed in other components of the plasma processing apparatus 1, such as the plasma processing chamber 10 and the spray head 13, and the temperature of these other components may be controlled by controlling the heat medium flowing into each flow path. The technology of the present invention enables the temperature of the target component to be controlled by forming multiple flow paths in the target component and controlling the heat medium flowing into each flow path.

[0100] Furthermore, in the above embodiments, the example described is a plasma processing apparatus 1 that uses plasma to process the substrate W. However, the technology of the present invention is not limited to this. Any apparatus that processes the substrate W is acceptable, and the technology of the present invention can be applied even to other processing apparatuses that do not use plasma.

[0101] Furthermore, in the above embodiments, as an example of a plasma source, a plasma processing apparatus 1 using capacitively coupled plasma (CCP) was described, but the plasma source is not limited to this. Examples of plasma sources other than capacitively coupled plasma include inductively coupled plasma (ICP), microwave-excited surface wave plasma (SWP), electron cyclotron resonance plasma (ECP), and helical wave-excited plasma (HWP).

[0102] Furthermore, in the above embodiment, the case where the control unit 2 of the plasma processing apparatus 1 controls the temperature control device 200 was described as an example. However, the technology of the present invention is not limited to this. The temperature control device 200 may have a control unit for controlling the temperature control device 200 in addition to the control unit 2.

[0103] The embodiments have been described above. As described above, the plasma processing system of the above embodiment includes a supply unit 210 (heat medium supply unit), a main body 111 (constituent component), and a control unit 2. The supply unit 210 is configured to supply multiple heat media, each at a different temperature. The main body 111 has multiple flow paths 1112 for each of the multiple heat media to flow independently, thus constituting the plasma processing system. The control unit 2 is configured to control the flow of heat media other than the first heat media from the supply unit 210 into the flow path 1112 when the first heat media among the multiple heat media flows into the flow path 1112. As a result, the plasma processing system of the embodiment can shorten the time required for the temperature of the main body 111 to stabilize.

[0104] Furthermore, the plasma processing system of the above embodiment also includes multiple pipes 201 (first pipes), 201b, multiple pipes 202 (second pipes), multiple valves 221 (first valves), multiple pipes 203 (third pipes), and multiple valves 223 (second valves). The multiple pipes 201 are respectively connected to one end of multiple flow paths 1112 of the main body 111 and to the supply unit 210, conveying multiple heat media supplied from the supply unit 210 to the multiple flow paths 1112. The multiple pipes 202 are respectively connected to the other end of the multiple flow paths 1112 of the main body 111 and to the supply unit 210, conveying heat media discharged from the multiple flow paths 1112 to the supply unit 210. Multiple valves 221 are respectively provided on the multiple pipes 201, enabling the multiple pipes 201 to be opened and closed respectively. The multiple pipes 203 branch from the multiple pipes 201, and each branch from the side of the pipe 201 closer to the flow path 1112 than the valve 221. Multiple valves 223 are respectively installed in multiple pipes 203, and can be opened and closed individually. The control unit 2 is configured such that, when the first heat medium flows into the flow path 1112, it controls the valve 221 of the pipe 201 supplying the first heat medium to be open, controls the valve 221 of the pipe 201 supplying heat media other than the first heat medium to be closed, and controls the valve 223 of the branch pipe 203 from the pipe 201 supplying heat media other than the first heat medium to be open. Therefore, the plasma processing system of this embodiment can discharge heat media other than the first heat medium from the flow path 1112 when the first heat medium of the multiple heat media flows into the flow path 1112 from the supply unit 210. Thus, the plasma processing system of this embodiment can shorten the time required for the temperature of the main body 111 to stabilize.

[0105] Furthermore, the plasma processing system of the above embodiment also includes a container 212 (first container). The container 212 is positioned lower than the main body 111 and is connected to multiple pipes 203, enabling it to store a heat medium. Thus, the plasma processing system of this embodiment can allow a heat medium other than the first heat medium stored in the flow path 1112 to flow into the container 212 by gravity without the need for a pump or the like. Furthermore, the plasma processing system of this embodiment can store the discharged heat medium other than the first heat medium in the container 212.

[0106] Furthermore, the plasma processing system of the above embodiment also includes an exhaust section 231 (first pressure reduction section). The exhaust section 231 is configured to reduce the pressure inside the container 212. The control section 2 is configured to control the valve 223 of the pipe 203 branching from the pipe 201 that carries a heat medium other than the first heat medium to be in a closed state while reducing the pressure inside the container 212 using the exhaust section 231. As a result, in the plasma processing system of the embodiment, the heat medium in the flow path 1112 is drawn into the container 212 and then rapidly discharged from the flow path 1112.

[0107] Furthermore, the plasma processing system of the above embodiment also includes multiple pipes 204 (fourth pipes) and multiple valves 224 (third valves). The multiple pipes 204 connect the container 212 to the multiple pipes 202. Multiple valves 224 are respectively provided on the multiple pipes 204, and can be opened and closed individually. The control unit 2 is configured to, when returning the heat medium stored in the container 212 to the supply unit 210, control the valves 224 of the pipes 204 connected to the pipes 202 supplying heat medium other than the first heat medium to the supply unit 210 to be in an open state. Thus, the plasma processing system of this embodiment can return the heat medium stored in the container 212 to the supply unit 210.

[0108] Furthermore, the plasma processing system of the above embodiment also includes a gas supply unit 241 (first pressurization unit). The gas supply unit 241 is configured to pressurize the container 212. The control unit 2 is configured to, while pressurizing the container 212 using the gas supply unit 241, control the valve 224 of the pipe 204 connected to the pipe 202 supplying the heat medium other than the first heat medium to the supply unit 210 to be in an open state when the heat medium stored in the container 212 is returned to the supply unit 210. Thus, the plasma processing system of this embodiment can rapidly return the heat medium stored in the container 212 to the supply unit 210.

[0109] Furthermore, the plasma processing system of the above embodiment also includes a gas supply unit 216. The gas supply unit 216 is connected to a plurality of pipes 203 and is configured to supply purge gas to the plurality of pipes 203. The control unit 2 is configured to control the gas supply unit 216 to supply purge gas to the pipes 203 branching from the pipes 201 that transport heat media other than the first heat media, when the first heat media of the plurality of heat media flows into the flow path 1112 from the supply unit 210. Thus, the plasma processing system of this embodiment can rapidly discharge heat media other than the first heat media from the flow path 1112 when the first heat media of the plurality of heat media flows into the flow path 1112 from the supply unit 210.

[0110] Furthermore, the plasma processing system of the above embodiment also includes multiple valves 222 (fourth valves), multiple pipes 205 (fifth pipes), multiple valves 225 (fifth valves), and a container 220 (second container). The multiple valves 222 are respectively installed on the multiple pipes 202, enabling them to be opened and closed individually. The multiple pipes 205 branch off from the multiple pipes 202, and each branch off from the side of the pipe 202 closer to the flow path 1112 than the valve 222. The multiple valves 225 are respectively installed on the multiple pipes 205, enabling them to be opened and closed individually. The container 220 is connected to the multiple pipes 205 and is capable of storing the heat medium. The control unit 2 is configured such that, when the first heat medium flows into the flow path 1112, it controls the valve 222 of the pipe 202 that supplies the first heat medium to be open, controls the valve 222 of the pipe 202 that supplies heat media other than the first heat medium to be closed, controls the valve 225 of the pipe 205 branching off from the pipe 202 that supplies the first heat medium to be closed, and controls the valve 225 of the pipe 205 branching off from the pipe 202 that supplies heat media other than the first heat medium to be open. Therefore, the plasma processing system of this embodiment can allow heat media other than the first heat medium stored in the flow path 1112 to flow into the container 220. Furthermore, the plasma processing system of this embodiment can store the discharged heat media other than the first heat medium in the container 220.

[0111] Furthermore, the plasma processing system of the above embodiment also includes an exhaust section 232 (second pressure reduction section). The exhaust section 232 is configured to reduce the pressure inside the container 220. The control section 2 is configured to control the valve 225 of the pipe 205 branching from the pipe 202 that carries the heat medium other than the first heat medium to be in the open state while using the exhaust section 232 to reduce the pressure inside the container 220. As a result, in the plasma processing system of the embodiment, the heat medium in the flow path 1112 is drawn into the container 220 and rapidly discharged from the flow path 1112.

[0112] Furthermore, the plasma processing system of the above embodiment also includes multiple pipes 206 (sixth pipes) and multiple valves 226 (sixth valves). The multiple pipes 206 connect the container 220 to the multiple pipes 202, and are respectively connected to the side of the multiple pipes 202 closest to the supply unit 210 to the valve 222. The multiple valves 226 are respectively provided on the multiple pipes 206, and can be opened and closed individually. The control unit 2 is configured to keep the valves 226 of the pipes 206 connected to the pipes 202 supplying the supply unit 210 to deliver a heat medium other than the first heat medium to the supply unit 210 in an open state when the heat medium stored in the container 220 is returned to the supply unit 210. Thus, the plasma processing system of this embodiment can return the heat medium stored in the container 220 to the supply unit 210.

[0113] Furthermore, the plasma processing system of the above embodiment also includes a gas supply unit 242 (second pressurization unit). The gas supply unit 242 is configured to pressurize the container 220. The control unit 2 is configured to, while pressurizing the container 220 using the gas supply unit 242, control the valve 226 of the pipe 206 connected to the pipe 202 supplying the heat medium other than the first heat medium to the supply unit 210 to be in an open state when the heat medium stored in the container 220 is returned to the supply unit 210. Thus, the plasma processing system of this embodiment can rapidly return the heat medium stored in the container 220 to the supply unit 210.

[0114] Furthermore, the main body 111 is configured to reduce heat transfer between the multiple flow paths 1112. The main body 111 can suppress heat transfer between the heat medium in the flow paths 1112.

[0115] Furthermore, the embodiments disclosed herein should be considered exemplary and not restrictive in all respects. In fact, the above-described embodiments can be implemented in various ways. Moreover, the above-described embodiments can be omitted, substituted, or modified in various ways without departing from the scope of the claimed technical solution and its spirit.

[0116] In addition, the following notes are further disclosed regarding the above-described implementation methods.

[0117] (Note 1)

[0118] A substrate processing apparatus comprising:

[0119] The heat medium supply unit is configured to supply multiple heat media, each at a different temperature.

[0120] The components constituting the substrate processing apparatus have multiple flow paths capable of allowing the multiple heat transfer media to flow independently; and

[0121] The control unit is configured to control the discharge of heat media other than the first heat media from the flow path when the first heat media among the plurality of heat media flows into the flow path from the heat media supply unit.

[0122] (Note 2)

[0123] According to the substrate processing apparatus described in Appendix 1, it further includes:

[0124] Multiple first pipes, each connecting one end of one of the multiple flow paths of the constituent component to the heat medium supply unit, transport the multiple heat medium supplied from the heat medium supply unit to the multiple flow paths;

[0125] Multiple second pipes, which are respectively connected to the other end of the multiple flow paths of the constituent components and the heat medium supply unit, transport the heat medium discharged from the multiple flow paths to the heat medium supply unit;

[0126] Multiple first valves are respectively installed on the multiple first pipes, and are capable of opening and closing the multiple first pipes respectively;

[0127] Multiple third pipes, each branching from the multiple first pipes, and each branching from the side of the first pipe closer to the flow path than the first valve; and

[0128] Multiple second valves are respectively installed on the multiple third pipes, and are capable of opening and closing the multiple third pipes respectively.

[0129] The control unit is configured to, when the first heat medium flows into the flow path, control the first valve of the first pipe that supplies the first heat medium to be in an open state, control the first valve of the first pipe that supplies heat medium other than the first heat medium to be in a closed state, and control the second valve of the third pipe that branches off from the first pipe that supplies heat medium other than the first heat medium to be in an open state.

[0130] (Note 3)

[0131] According to the substrate processing apparatus described in Appendix 2, wherein,

[0132] It also has a first container, which is positioned lower than the constituent components and connected to the plurality of third pipes, capable of storing the heat medium.

[0133] (Note 4)

[0134] According to the substrate processing apparatus described in Appendix 3, wherein,

[0135] It also has a first pressure-reducing section, which is configured to reduce the pressure inside the first container.

[0136] The control unit is configured to simultaneously depressurize the pressure inside the first container using the first pressure-reducing unit and control the second valve of the third pipe of the first pipe branch that transports a heat medium other than the first heat medium to be in an open state.

[0137] (Note 5)

[0138] According to the substrate processing apparatus described in Appendix 3 or 4, it further comprises:

[0139] Multiple fourth piping, connecting the first container to the multiple second piping; and

[0140] Multiple third valves are respectively installed on the multiple fourth pipes, and are capable of opening and closing the multiple fourth pipes respectively.

[0141] The control unit is configured to, when the heat medium stored in the first container is returned to the heat medium supply unit, control the third valve of the fourth pipe connected to the second pipe that supplies heat medium other than the first heat medium to the heat medium supply unit to be in an open state.

[0142] (Note 6) According to the substrate processing apparatus described in Note 5, wherein,

[0143] It also has a first pressurization section, which is configured to pressurize the contents of the first container.

[0144] The control unit is configured to, while pressurizing the first container using the first pressurization unit, control the third valve of the fourth pipe connected to the second pipe supplying a heat medium other than the first heat medium to the heat medium supply unit to be in an open state when the heat medium stored in the first container is returned to the heat medium supply unit.

[0145] (Note 7)

[0146] According to the substrate processing apparatus described in Appendix 2, wherein,

[0147] It also includes a gas supply unit connected to the plurality of third pipes, configured to supply purge gas to the plurality of third pipes.

[0148] The control unit is configured to control the gas supply unit to supply purging gas to the third pipe of the first pipe branch that delivers a heat medium other than the first heat medium when the first heat medium flows into the flow path.

[0149] (Note 8)

[0150] According to Appendix 7, the substrate processing apparatus further includes:

[0151] Multiple fourth valves are respectively installed on the multiple second pipes, and are capable of opening and closing the multiple second pipes respectively;

[0152] Multiple fifth pipes, each branching from the multiple second pipes, and each branching from the side of the second pipes closer to the flow path than the fourth valve;

[0153] Multiple fifth valves, each installed on multiple fifth pipes, are capable of opening and closing the multiple fifth pipes respectively; and

[0154] The second container, connected to the plurality of fifth pipes, is capable of storing the heat medium.

[0155] The control unit is configured to, when the first heat medium flows into the flow path, control the fourth valve of the second pipe that supplies the first heat medium to be in an open state, control the fourth valve of the second pipe that supplies heat medium other than the first heat medium to be in a closed state, control the fifth valve of the fifth pipe that branches off from the second pipe that supplies the first heat medium to be in a closed state, and control the fifth valve of the fifth pipe that branches off from the second pipe that supplies heat medium other than the first heat medium to be in an open state.

[0156] (Note 9)

[0157] According to Appendix 8, the substrate processing apparatus, wherein,

[0158] It also has a second pressure-reducing section, which is configured to reduce the pressure inside the second container.

[0159] The control unit is configured to simultaneously depressurize the pressure inside the second container using the second pressure-reducing unit and control the fifth valve of the fifth pipe of the second pipe branch that transports a heat medium other than the first heat medium to be in an open state.

[0160] (Postscript 10)

[0161] According to Appendix 8 or 9, the substrate processing apparatus further comprises:

[0162] A plurality of sixth pipes, connecting the second container to the plurality of second pipes, and respectively connected to the side of the plurality of second pipes closer to the heat medium supply section than the fourth valve; and

[0163] Multiple sixth valves are respectively installed on the multiple sixth pipes, and are capable of opening and closing the multiple sixth pipes respectively.

[0164] The control unit is configured to, when the heat medium stored in the second container is returned to the heat medium supply unit, control the sixth valve of the sixth pipe connected to the second pipe that supplies heat medium other than the first heat medium to the heat medium supply unit to be in an open state.

[0165] (Postscript 11)

[0166] According to the substrate processing apparatus described in Appendix 10, wherein,

[0167] It also has a second pressurizing section, which is configured to pressurize the contents of the second container.

[0168] The control unit is configured to, while pressurizing the second container using the second pressurization unit, keep the sixth valve of the sixth pipe connected to the second pipe that supplies a heat medium other than the first heat medium to the heat medium supply unit in an open state when the heat medium stored in the second container is returned to the heat medium supply unit.

[0169] (Postscript 12)

[0170] According to any one of the appendices 1 to 11, the substrate processing apparatus, wherein,

[0171] The constituent components are configured to reduce heat transfer between the plurality of flow paths.

[0172] (Postscript 13)

[0173] According to any one of the appendices 1 to 12, the substrate processing apparatus, wherein,

[0174] The constituent component is a mounting stage on which a mounting surface for mounting a substrate is formed, and the plurality of flow paths are formed in the region below the mounting surface.

[0175] (Postscript 14)

[0176] A temperature control device, comprising:

[0177] A heat medium supply unit, configured to supply multiple heat media, each at a different temperature; and

[0178] The control unit is configured to, for a target component that is subject to temperature control and has multiple flow paths that are respectively connected to the heat medium supply section and allow the multiple heat mediums to flow independently, control the discharge of heat mediums other than the first heat medium from the flow path of the target component when the first heat medium among the multiple heat mediums flows into the flow path of the target component from the heat medium supply section.

[0179] (Postscript 15)

[0180] A temperature control method, comprising:

[0181] A step of causing a first heat medium of a plurality of heat media to flow from a heat media supply unit into a flow path formed in a component constituting a substrate processing apparatus, wherein the heat media supply unit is configured to supply the plurality of heat media, each having a different temperature, and the component forms a plurality of flow paths respectively connected to the heat media supply unit and capable of allowing the plurality of heat media to flow independently; and

[0182] When the first heat medium flows into the flow path, a step is performed to control the discharge of heat medium other than the first heat medium from the flow path among the plurality of heat mediums.

[0183] Explanation of reference numerals in the attached figures

[0184] 1. Plasma processing device

[0185] 2. Control Department

[0186] 2a Computer

[0187] 2a1 Processing Department

[0188] 2a2 Storage Unit

[0189] 2a3 Communication Interface

[0190] 10. Plasma processing chamber

[0191] 11. Substrate support

[0192] 13 Spray heads

[0193] 20 Gas Supply Department

[0194] 30 power supply

[0195] 40 Exhaust System

[0196] 111 Main Body

[0197] 111a Central Area

[0198] 111b Annular region

[0199] 111c Back

[0200] 112 Ring Components

[0201] 200 Temperature control device

[0202] 201, 201a, 201b, 201c piping

[0203] 202, 202a, 202b, 202c piping

[0204] 203, 203a, 203b, 203c piping

[0205] 204, 204a, 204b piping

[0206] 205, 205a, 205b piping

[0207] 206, 206a, 206b piping

[0208] 209a, 209b piping

[0209] 210 Supply Department

[0210] 211a Storage Section

[0211] 211b Storage Section

[0212] 212 Container

[0213] 216 Gas Supply Department

[0214] Containers 220, 220a, and 220b

[0215] Valves 221, 221a, and 221b

[0216] 222, 222a, 222b valves

[0217] Valves 223, 223a, 223b, and 223c

[0218] 224, 224a, 224b valves

[0219] 225, 225a, 225b valves

[0220] 226, 226a, 226b valves

[0221] Exhaust sections 231 and 232

[0222] Gas Supply Departments 241 & 242

[0223] 1110 Base

[0224] 1111 Electrostatic Chuck

[0225] 1111a Ceramic Components

[0226] 1111b Electrostatic electrode

[0227] 1112, 1112a, 1112b, 1112c flow path

[0228] 1113 Spacer

[0229] 1114 Gap

[0230] W substrate.

Claims

1. A substrate processing apparatus characterized by comprising: has: a hot medium supply section configured to supply a plurality of hot media each having a different temperature; a constituent section constituting a substrate processing apparatus, which is formed with a plurality of flow paths through which the plurality of hot media can flow independently of each other; and a control section configured to control the plurality of hot media so that a first hot medium among the plurality of hot media is supplied from the hot medium supply section to the flow paths, and the hot media other than the first hot medium are discharged from the flow paths.

2. The substrate processing apparatus according to claim 1, wherein Further has: a plurality of first pipes each connecting one end of the plurality of flow paths of the constituent section and the hot medium supply section, and each transporting the plurality of hot media supplied from the hot medium supply section to the plurality of flow paths; a plurality of second pipes each connecting the other end of the plurality of flow paths of the constituent section and the hot medium supply section, and each transporting the hot media discharged from the plurality of flow paths to the hot medium supply section; a plurality of first valves each provided in the plurality of first pipes, and each capable of opening and closing the plurality of first pipes; a plurality of third pipes each branched from the plurality of first pipes, and each branched from the first pipe on a side of the first valve other than the side of the flow paths; and a plurality of second valves each provided in the plurality of third pipes, and each capable of opening and closing the plurality of third pipes, the control section is configured to control the first valves of the first pipes transporting the first hot medium to be in an open state, and the first valves of the first pipes transporting the hot media other than the first hot medium to be in a closed state, and the second valves of the third pipes branched from the first pipes transporting the hot media other than the first hot medium to be in an open state, when the first hot medium is caused to flow into the flow paths.

3. The substrate processing apparatus according to claim 2, further having: a first container disposed at a position lower than the constituent section, connected to the plurality of third pipes, and capable of storing the hot media.

4. The substrate processing apparatus according to claim 3, further having: a first decompression section configured to decompress the first container, the control section is configured to control the second valves of the third pipes branched from the first pipes transporting the hot media other than the first hot medium to be in an open state while decompressing the first container by the first decompression section.

5. The substrate processing apparatus of claim 3, wherein Further has: a plurality of fourth pipes connecting the first container and the plurality of second pipes; and a plurality of third valves each provided in the plurality of fourth pipes, and each capable of opening and closing the plurality of fourth pipes, the control section is configured to control the third valves of the fourth pipes connected to the second pipes transporting the hot media other than the first hot medium to the hot medium supply section to be in an open state when the hot media stored in the first container are caused to return to the hot medium supply section.

6. The substrate processing apparatus according to claim 5, further having: a first pressurization section configured to pressurize the first container, the control section is configured to control the second valves of the third pipes branched from the first pipes transporting the hot media other than the first hot medium to be in an open state while pressurizing the first container by the first pressurization section. The control section is configured to control the third valve of the fourth pipe connected to the second pipe that transports a heat medium other than the first heat medium to the heat medium supply section to an open state while pressurizing the inside of the first container using the first pressurizing section in a case where the heat medium stored in the first container is returned to the heat medium supply section.

7. The substrate processing apparatus according to claim 2, wherein: a gas supply section connected to the plurality of third pipes and configured to be capable of supplying purge gas to the plurality of third pipes, the control section is configured to control the gas supply section to supply purge gas to the third pipe branched from the first pipe that transports a heat medium other than the first heat medium in a case where the first heat medium flows into the flow path.

8. The substrate processing apparatus of claim 7, wherein further comprising: a plurality of fourth valves respectively provided in the plurality of second pipes and capable of respectively opening and closing the plurality of second pipes; a plurality of fifth pipes respectively branched from the plurality of second pipes and respectively branched from a side of the second pipe closer to the flow path than the fourth valve; a plurality of fifth valves respectively provided in the plurality of fifth pipes and capable of respectively opening and closing the plurality of fifth pipes; and a second container connected to the plurality of fifth pipes and capable of storing a heat medium, the control section is configured to control the fourth valve of the second pipe that transports the first heat medium to an open state, and control the fourth valve of the second pipe that transports a heat medium other than the first heat medium to a closed state, control the fifth valve of the fifth pipe branched from the second pipe that transports the first heat medium to a closed state, and control the fifth valve of the fifth pipe branched from the second pipe that transports a heat medium other than the first heat medium to an open state in a case where the first heat medium flows into the flow path.

9. The substrate processing apparatus according to claim 8, wherein: a second depressurizing section configured to be capable of depressurizing the inside of the second container is further included, the control section is configured to control the fifth valve of the fifth pipe branched from the second pipe that transports a heat medium other than the first heat medium to an open state while depressurizing the inside of the second container using the second depressurizing section.

10. The substrate processing apparatus of claim 8, wherein further comprising: a plurality of sixth pipes connecting the second container and the plurality of second pipes and respectively connected to a side of the plurality of second pipes closer to the heat medium supply section than the fourth valve; and a plurality of sixth valves respectively provided in the plurality of sixth pipes and capable of respectively opening and closing the plurality of sixth pipes, the control section is configured to control the sixth valve of the sixth pipe connected to the second pipe that transports a heat medium other than the first heat medium to the heat medium supply section to an open state in a case where the heat medium stored in the second container is returned to the heat medium supply section.

11. The substrate processing apparatus according to claim 10, wherein: a second pressurizing section configured to be capable of pressurizing the inside of the second container is further included, the control section is configured to control the sixth valve of the sixth pipe connected to the second pipe that transports a heat medium other than the first heat medium to the heat medium supply section to an open state while pressurizing the inside of the second container using the second pressurizing section. The control unit is configured to, while pressurizing the second container using the second pressurization unit, keep the sixth valve of the sixth pipe connected to the second pipe that supplies a heat medium other than the first heat medium to the heat medium supply unit in an open state when the heat medium stored in the second container is returned to the heat medium supply unit.

12. The substrate processing apparatus according to any one of claims 1 to 11, characterized in that: The constituent components are configured to reduce heat transfer between the plurality of flow paths.

13. The substrate processing apparatus according to any one of claims 1 to 11, characterized in that: The constituent component is a mounting stage on which a mounting surface for mounting a substrate is formed, and the plurality of flow paths are formed in the region below the mounting surface.

14. A temperature control device, characterized by have: A heat medium supply unit, configured to supply multiple heat media, each at a different temperature; and The control unit is configured to, for a target component that is subject to temperature control and has multiple flow paths that are respectively connected to the heat medium supply section and allow the multiple heat mediums to flow independently, control the discharge of heat mediums other than the first heat medium from the flow path of the target component when the first heat medium among the multiple heat mediums flows into the flow path of the target component from the heat medium supply section.

15. A temperature control method characterized by, include: The step of causing a first heat medium among a plurality of heat media to flow from a heat media supply unit into a flow path formed in a component constituting a substrate processing apparatus, wherein the heat media supply unit is configured to supply the plurality of heat media each having a different temperature, and the component constituting an apparatus has a plurality of flow paths respectively connected to the heat media supply unit and capable of allowing the plurality of heat media to flow independently. and When the first heat medium flows into the flow path, a step is performed to control the discharge of heat medium other than the first heat medium from the flow path among the plurality of heat mediums.

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