A multiphase reactive deposition apparatus and a method for analyzing gallium oxide growth behavior

Abstract

This invention discloses a multiphase reactive deposition apparatus and a method for analyzing gallium oxide growth behavior. The method includes: meshing a pre-constructed three-dimensional geometric model of a horizontal reaction chamber to obtain a mesh file; importing the mesh file into fluid dynamics simulation software, setting boundary conditions, and obtaining a physical model; constructing a computational model based on the flow motion of gallium acetylacetonate droplets, vaporization phase transition, gas-phase oxidation reaction, and the deposition process of reaction products on the substrate surface; selecting a multiphase flow solver based on the physical and computational models; inputting material and control parameters into the multiphase flow solver to obtain simulation results; and obtaining α-Ga₂O₃ growth behavior analysis results based on the constructed multiphase reaction coupling model and simulation results. The multiphase reaction coupling model is used to calculate the mutual influence between physical fields. The method provided by this invention can predict gallium oxide growth behavior, providing support for optimizing deposition process parameters and improving thin film growth uniformity.

Description

Technical Field

[0001] This invention belongs to the field of semiconductor materials technology, and specifically relates to a multiphase reactive deposition apparatus and a method for analyzing gallium oxide growth behavior. Background Technology

[0002] Gallium oxide (α-Ga₂O₃), as a wide-bandgap semiconductor material, has broad application prospects in power devices and deep-ultraviolet optoelectronic devices. Currently, α-Ga₂O₃ thin films can be prepared using processes such as metal-organic vapor deposition (MOV), halide vapor deposition (HPV), and atomized chemical vapor deposition (CVD). Among these, Atomized CVD offers advantages in terms of cost, equipment complexity, and system scalability, such as requiring no vacuum environment, simple equipment configuration, and low energy consumption. Therefore, this method shows high application potential in the field of α-Ga₂O₃ heteroepitaxy preparation.

[0003] However, in atomized chemical vapor deposition, the reaction chamber typically contains carrier gas, reactant gas, and precursor droplets simultaneously, exhibiting significant gas-liquid multiphase flow characteristics. The precursor droplets undergo multiple physical and chemical processes within the reaction chamber, including in-flow transport, thermal vaporization, reaction with oxidizing gases, and eventual deposition on the substrate surface. These processes are highly coupled across spatial and temporal scales, and their behavior is influenced by a combination of factors, including the reaction chamber structure, gas inlet method, and temperature field distribution.

[0004] Current research largely focuses on empirical exploration of the impact of process parameters on thin film growth results, while systematic studies on multiphase flow, heat transfer, and reaction behavior within the reaction chamber remain challenging. On the one hand, the processes within the reaction chamber are difficult to directly detect experimentally; on the other hand, the flow field, temperature field, and precursor droplet distribution vary significantly under different structural forms and operating conditions, making it difficult to accurately couple and analyze the reaction mechanism and motion characteristics. Summary of the Invention

[0005] Objective: In order to overcome the shortcomings of the existing technology, the present invention provides a multiphase reactive deposition apparatus and a method for analyzing gallium oxide growth behavior.

[0006] Technical solution: To solve the above technical problems, the technical solution adopted by the present invention is as follows: In a first aspect, a multiphase reactive deposition apparatus is provided, comprising: The horizontal reaction chamber includes a first pipe, a second pipe, and a third pipe connected in sequence; the diameter of the first pipe is smaller than the diameter of the second pipe, which is smaller than the diameter of the third pipe; the free end of the first pipe serves as the first inlet of the horizontal reaction chamber for introducing a mixture of oxygen and nitrogen gas, and the free end of the third pipe serves as the outlet of the horizontal reaction chamber. The second pipe has a second inlet on its side wall for introducing gallium acetylacetonate droplets; the third pipe has a substrate inside, and heating units are arranged at positions corresponding to the substrate on the outer periphery of the pipe.

[0007] In some embodiments, the total length of the horizontal reaction chamber is 1.56~1.76m; the diameter of the first inlet is 0.04~0.06m; the second inlet is a pipe with a diameter of 0.04~0.06m and a length of 0.04~0.06m; the diameter of the outlet is 0.1~0.3m; and the length of the heated area of ​​the horizontal reaction chamber is 0.3~0.5m.

[0008] In some embodiments, nitrogen gas is used as a carrier gas to transport the gallium acetylacetonate droplets into a horizontal reaction chamber.

[0009] In a second aspect, a method for analyzing gallium oxide growth behavior based on a multiphase reactive deposition apparatus according to any one of the first aspects is provided, comprising: The constructed three-dimensional geometric model of the horizontal reaction chamber is meshed to obtain a mesh file; Import the mesh file into the fluid dynamics simulation software, set the boundary conditions, and obtain the physical model; A computational model was constructed based on the flow motion of gallium acetylacetonate droplets, vaporization phase transition, gas phase oxidation reaction, and deposition of reaction products on the substrate surface. Select a multiphase flow solver based on the physical and computational models; Input the material parameters and control parameters into the multiphase flow solver to obtain the simulation results; Based on the constructed multiphase reaction coupling model and simulation results, the growth behavior analysis results of α-Ga2O3 are obtained; the multiphase reaction coupling model is used to calculate the mutual influence between physical fields in the horizontal reaction chamber; the physical fields include temperature field and flow field.

[0010] The computational model constructs a complete and unified calculation of the process from Ga source transport to α-Ga₂O₃ thin film deposition within a horizontal reaction chamber. Each sub-model is responsible for a specific physical process, and their interactions are achieved through variable transfer, ultimately yielding deposition result analysis. This provides support for the analysis of gallium oxide growth mechanisms and system optimization. The mass equivalence calculation mechanism simplifies the computational complexity of the reaction and enables a comprehensive description of the transport, reaction, and deposition behavior of gallium acetylacetonate droplets within the horizontal reaction chamber. The multiphase reaction coupling model comprehensively considers the mutual influence between physical fields and their impact on droplet evolution. The method provided by this invention can accurately predict the effects of different process conditions on α-Ga₂O₃ thin films, thus providing reference guidance for optimizing the preparation process of α-Ga₂O₃ thin films.

[0011] In some embodiments, the boundary conditions include the wall type, wall temperature, inlet conditions, and outlet conditions of the horizontal reaction chamber conduit.

[0012] In some embodiments, the computational model constructed based on the flow-dependent motion of gallium acetylacetonate droplets, vaporization phase transition, gas-phase oxidation reaction, and deposition of reaction products on the substrate surface includes: A component transport model was constructed to calculate the physical motion of the gallium source; A mass change model is constructed, and the rate of mass change per unit time is calculated based on the remaining mass of gallium acetylacetonate in a single droplet. The formula is as follows: ; in, m is the rate of change of gallium acetylacetonate mass per unit time. Ga Let be the remaining mass of gallium acetylacetonate in a single droplet, t be time, and Sh be the Sherwood number. Let d be the diffusion coefficient of oxygen. p Let A be the droplet diameter. p The surface area of ​​the fog droplets. C represents the local oxygen concentration in the gas surrounding the droplets. s The equilibrium concentration of the equivalent reaction on the droplet surface; An equivalent reaction model is constructed, and the consumption of oxidant and the generation of α-Ga2O3 are calculated based on the mass conversion relationship of gallium acetylacetonate according to the mass change model. This avoids the computational complexity and numerical instability caused by explicitly solving the continuous concentration field of reaction products.

[0013] In some embodiments, the material parameters include gas phase parameters and liquid phase parameters; The gas phase parameters include the gaseous physical properties of oxygen, nitrogen, and gallium acetylacetonate, including molar mass, specific heat at constant pressure, enthalpy of formation, kinematic viscosity, and Prandtl number.

[0014] The liquid phase parameters include the liquid physical properties of gallium acetylacetonate and the initial state parameters before the droplets are injected into the horizontal reaction chamber, including liquid density, specific heat at constant pressure, latent heat of vaporization, boiling point, and vaporization temperature.

[0015] Beneficial effects: The multiphase reactive deposition apparatus and gallium oxide growth behavior analysis method provided by this invention have the following advantages: 1. This invention constructs physical and computational models to predict the influence of different process parameters on the growth distribution characteristics of α-Ga2O3 during the design stage, providing reliable technical support for optimizing deposition process parameters and improving the uniformity of film growth; it introduces a mass equivalence calculation mechanism to achieve a synergistic description of the flow, heat transfer and oxidation reaction processes in the horizontal reaction chamber, thereby improving the stability and controllability of the system under complex multiphase reaction conditions. Attached Figure Description

[0016] Figure 1 This is a schematic diagram of the multiphase reactive deposition apparatus in an embodiment of the present invention; Figure 2 This is a cloud map showing the effective concentration distribution of gallium acetylacetonate in a horizontal reaction chamber, calculated based on a multiphase reaction coupling model in an embodiment of the present invention. Figure 3 This is a cloud map showing the effective oxygen concentration distribution in a horizontal reaction chamber, calculated based on a multiphase reaction coupling model in an embodiment of the present invention. Figure 4 This is a diagram showing the evolution of the average diameter of gallium acetylacetonate droplets in a horizontal reaction chamber, calculated based on a multiphase reaction coupling model in this embodiment of the invention. Figure 5 This is a cloud map of the temperature field distribution inside the horizontal reaction chamber calculated based on a multiphase reaction coupling model in an embodiment of the present invention. Figure 6 This is a schematic diagram of the gallium acetylacetonate droplets and their average diameter distribution above the substrate, calculated based on a multiphase reaction coupling model in an embodiment of the present invention. Figure 7 This is a schematic diagram of the concentration distribution of α-Ga2O3 above the substrate calculated in the comparative example of this invention; Figure 8 This is a schematic diagram of the concentration distribution of α-Ga2O3 above the substrate calculated based on the reaction equivalence model in an embodiment of the present invention. Detailed Implementation

[0017] The technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the protection scope of the present invention.

[0018] The present invention will be further described below with reference to specific embodiments.

[0019] Example 1: This example provides a multiphase reactive deposition apparatus, such as... Figure 1 As shown, it includes: The horizontal reaction chamber is composed of first, second and third pipes with different diameters connected together; the first pipe has the smallest diameter, 0.05m, and the third pipe has the largest diameter, 0.2m; the free end of the first pipe serves as the first inlet of the horizontal reaction chamber, used to introduce a mixture of oxygen and nitrogen gas with a volume ratio of oxygen to nitrogen of 1:5; the free end of the third pipe serves as the outlet of the horizontal reaction chamber. The second inlet is located below the second pipe for introducing gallium acetylacetonate droplets; the third pipe contains a substrate made of c-plane sapphire material, and resistance heating units are arranged at corresponding positions on the outer periphery of the pipe and the substrate, specifically including a conductive graphite support and an induction coil to achieve heating.

[0020] The total length of the horizontal reaction chamber is 1.66m; the diameter of the first inlet is 0.05m; the second inlet is a cylindrical pipe with a diameter of 0.05m and a length of 0.05m; the diameter of the outlet is 0.2m; and the length of the heated area of ​​the horizontal reaction chamber is 0.4m.

[0021] The gallium acetylacetonate solution is processed by an ultrasonic atomization device to form micron-sized droplets, which are then transported to a horizontal reaction chamber by nitrogen as a carrier gas.

[0022] The growth of α-Ga₂O₃ thin films is mainly based on the following mechanism: a nitrogen-oxygen mixture introduced through the first inlet merges with gallium acetylacetonate droplets entering the horizontal reaction chamber through the second inlet. Under the overall airflow, the droplets are transported to the region above the substrate, where they undergo thermal decomposition and oxidation reactions in a high-temperature and oxygen-rich environment. This oxidation reaction does not occur only when the droplets contact the substrate, but is determined by the local temperature field at the droplet's location, the carrier gas properties, and the precursor phase. When the local conditions meet a preset reaction threshold, the precursor undergoes a mass conversion reaction; when the conditions are not met, the reaction process automatically terminates. The reaction products are transported by the airflow and deposited on the substrate surface, thus forming an α-Ga₂O₃ thin film.

[0023] Example 2: This example provides a multiphase reactive deposition apparatus, referring to Example 1, except that the total length of the horizontal reaction chamber is 1.56m; the diameter of the first inlet is 0.04m; the second inlet is a pipe with a diameter of 0.04m and a length of 0.04m; the diameter of the outlet is 0.1m; and the length of the heated area of ​​the horizontal reaction chamber is 0.3m.

[0024] Example 3: This example provides a multiphase reactive deposition apparatus, referring to Example 1, except that the total length of the horizontal reaction chamber is 1.76m; the diameter of the first inlet is 0.06m; the second inlet is a pipe with a diameter of 0.06m and a length of 0.06m; the diameter of the outlet is 0.3m; and the length of the heated area of ​​the horizontal reaction chamber is 0.5m.

[0025] Example 4: This example provides a method for analyzing the gallium oxide growth behavior based on the multiphase reactive deposition apparatus described in any one of Examples 1, including: A three-dimensional geometric model of the device in Example 1 was established using ICEM software, and the three-dimensional geometric model was meshed using CSDM software to obtain a mesh file suitable for numerical calculation. Import the mesh file into the fluid dynamics simulation software OpenFOAM, and set the corresponding boundary conditions for the three-dimensional geometric model. The boundary conditions are configured in folder 0, including wall boundary type, wall temperature, inlet conditions, and outlet conditions. Specifically, the wall type and its temperature conditions are defined in files P, U, and T, respectively; the inlet conditions for nitrogen, oxygen, and the reaction product α-Ga₂O₃ are set in the corresponding component files.

[0026] In this embodiment, the pipe wall of the horizontal reaction chamber adopts a no-slip boundary condition, and the wall temperature is set in the range of 680K~720K. The inlet adopts a velocity inlet method, and the injection velocity of the nitrogen-oxygen mixed gas and the gallium acetylacetonate droplets is consistent, with a value range of 0.25~0.35m / s; the outlet boundary condition adopts a free flow form.

[0027] A computational model was constructed based on the flow motion of gallium acetylacetonate droplets, vaporization phase transition, gas-phase oxidation reaction, and deposition of reaction products on the substrate surface: In this embodiment, the computational model includes a component transport computational model that incorporates chemical reactions, and the reaction with gallium acetylacetonate as the gallium source is defined as follows: ; To describe the reaction behavior of gallium acetylacetonate droplets within a horizontal reaction chamber, a mass change model based on a diffusion-limited mechanism is introduced. The rate of mass change per unit time is calculated based on the remaining mass of gallium acetylacetonate in a single droplet, using the following formula: ; in, m is the rate of change of gallium acetylacetonate mass per unit time. Ga Let be the remaining mass of gallium acetylacetonate in a single droplet, t be time, and Sh be the Sherwood number. Let d be the diffusion coefficient of oxygen. p Let A be the droplet diameter. p The surface area of ​​the fog droplets. C represents the local oxygen concentration in the gas surrounding the droplets. s The equilibrium concentration of the equivalent reaction on the droplet surface.

[0028] When the local temperature is below the preset reaction temperature threshold, the reaction is suppressed; when the temperature reaches or exceeds the threshold, the above-mentioned mass change process is activated, thereby realizing a continuous description of the thermal decomposition and oxidation reaction process of gallium acetylacetonate.

[0029] To achieve stable coupled computation of multiphase flow processes and chemical reaction processes, a reaction equivalent model for multiphase droplet oxidation is proposed. This model uses liquid precursor droplets as the reaction carrier and describes the change in precursor mass over time to equivalently characterize its oxidation behavior in a high-temperature, oxygen-containing environment. In the numerical calculation, instead of directly solving for the continuous concentration field of reaction products in the computational domain, the model calculates the mass change of the precursor at each discrete time step based on the local temperature, droplet characteristic size, and diffusion parameters at the droplet's location. This mass change is used to characterize the reaction intensity, and the equivalent consumption of oxidant and the equivalent generation of reaction products are calculated using stoichiometry.

[0030] Considering the cavity size and reactive gas velocity range of the two-dimensional cavity model, as well as the oxidation reaction process, the multiphase reactive flow solver buoyantReactingFoam was selected. This solver, an extension of sprayFoam, enables coupled calculations of the droplet spray process and the chemical reaction process. During the calculation, the PIMPLE algorithm is used for pressure-velocity coupling, combined with the Lagrangian method for droplet tracking. Simultaneously, decomposeDict is used for parallel partitioned calculations to improve solution efficiency and shorten computation time.

[0031] Material and control parameters are set in the solver. Material parameters are divided into two categories: gas phase parameters and liquid phase parameters. Gas phase parameters include the physical properties of nitrogen, oxygen, and the vaporized gallium acetylacetonate, such as molar mass, specific heat at constant pressure, enthalpy of formation, kinematic viscosity, and Prandtl number. These parameters are defined using a thermophysical model. The physical properties of nitrogen and oxygen are directly adopted from the OpenFOAM built-in database; the molar mass, specific heat at constant pressure, and enthalpy of formation of gallium acetylacetonate are referenced from FLUENT data.

[0032] Liquid phase parameters include the liquid properties of gallium acetylacetonate and initial state parameters before droplet injection, such as liquid density, specific heat at constant pressure, latent heat of vaporization, boiling point, and vaporization temperature. These parameters were obtained by constructing a new gallium acetylacetonate liquid property library and correlating it with buoyantreactingFoam. Based on literature data and FLUENT data, the liquid density of gallium acetylacetonate was set to 1420 kg / m³. 3 Its specific heat at constant pressure is 1892 J / (kg·K), latent heat of vaporization is 228474 J / kg, boiling point is 413.15 K, and vaporization temperature is 333.15 K.

[0033] The initial injection conditions for the droplets are set in the cloudProperties file. In this embodiment, the initial droplet temperature is set to 300K, and the droplets are injected at the same and uniform rate as the carrier gas (nitrogen). Based on existing literature and experimental fitting results, the mass injection rate of the droplets is set to 1 mg / s, and the droplet size distribution adopts the Rosin-Rammler distribution model, where the maximum droplet size is 1 × 10⁻⁶. -4 m, minimum particle size is 1×10 -7 m, with an average particle size of 1×10 -5 m, with a distribution index of 3.5.

[0034] Control parameters are configured in the controlDict file, including the initial time step, total simulation duration, result output interval, maximum Courant number, and maximum time step. In this embodiment, the initial time step is set to 0.01s, and adaptive time step adjustment is enabled; the simulation time range is 0~25s, the result output interval is 0.5s, the maximum Courant number and the maximum time step are set to 0.5s and 0.1s respectively, and the output file format is binary.

[0035] After setting the material and control parameters, the solver is started to solve the multiphase reactive flow problem for the flow, heat transfer, and oxidation reaction of gallium acetylacetonate in the horizontal reaction chamber. Based on the mass change model, the flow, heat transfer, and oxidation reaction of gallium acetylacetonate in the horizontal reaction chamber are coupled and solved. Finally, the calculation results of the temperature field, velocity field, mass change distribution of gallium acetylacetonate in the droplets, gas phase component distribution, droplet size evolution, and particle number distribution inside the horizontal reaction chamber are obtained.

[0036] The simulation results were post-processed and analyzed using the visualization software ParaView. Based on the constructed multiphase reaction coupling model, the interaction between physical fields such as temperature field and flow field (including pressure field and velocity field) was calculated. The droplet transport, phase change and oxidation reaction processes in the horizontal reaction chamber were solved jointly. The spatial distribution of reactants and products, droplet size evolution and statistical characteristic parameters in the substrate region were extracted to characterize the growth behavior of α-Ga2O3 film in the initial nucleation stage.

[0037] like Figure 2 As shown, the four simulation cloud maps are the effective concentration distribution cloud maps of gallium acetylacetonate captured when the simulation duration is 1s, 6s, 12s, and 18s, respectively. Figure 3 The four simulated cloud maps are the oxygen effective concentration distribution cloud maps captured when the simulation duration is 1s, 6s, 12s, and 18s, respectively. Figure 4 and Figure 5 And so on.

[0038] Combination Figures 2-4 As shown, after introducing a multiphase reaction coupling model, the effective concentration distribution of gallium acetylacetonate in the horizontal reaction chamber is jointly regulated by the temperature field and droplet size evolution, exhibiting significant differences in the region above the substrate. This difference is not solely determined by the flow field, but rather stems from the coupling relationship between the droplet surface reaction rate and local oxygen concentration and temperature conditions in the model of this invention.

[0039] Further integration Figure 5 and Figure 6 It can be seen that when the local temperature or the number of droplets does not reach the set reaction threshold, the reaction rate remains at a low level; when both meet the interfacial reaction conditions, the reaction rate increases significantly. Therefore, the reaction behavior exhibits obvious condition-triggered characteristics, rather than occurring uniformly across the entire field. This coupling mechanism creates a dynamic equilibrium between droplet evaporation, precursor diffusion, and surface oxidation reactions, thereby regulating the droplet-scale evolution process and its spatial distribution.

[0040] Figure 8 The diagram shows the concentration distribution of α-Ga2O3 above the substrate calculated based on the reaction equivalence model of this invention for simulation durations of 4s, 6s, 8s, 10s, 12s, 13s, 14s, 15s, 17s, and 19s.

[0041] Comparative Example 1: The method and steps for analyzing gallium oxide growth behavior are the same as in Example 2, except that an equivalent reaction model was not introduced for equivalent calculation.

[0042] Figure 7 The diagram shows the concentration distribution of α-Ga2O3 above the substrate calculated without introducing a reaction equivalent model for simulation durations of 4s, 6s, 8s, 10s, 12s, 13s, 14s, 15s, 17s, and 19s.

[0043] contrast Figure 7 and Figure 8 It can be seen that, without the introduction of the reaction equivalent model of the present invention, gallium acetylacetonate undergoes uncontrolled reaction or premature dissipation during transport, resulting in a significant decrease in the effective concentration of α-Ga2O3 above the substrate along the axial direction, large spatial differences in deposition distribution, insufficient deposition or excessive consumption in local areas, and poor uniformity.

[0044] After introducing the reaction equivalent model of this invention, the average growth rate of α-Ga2O3 in the region above the substrate is significantly improved, the fluctuation range of the deposition rate is significantly reduced, and no large-scale premature consumption phenomenon occurs in the high-reaction zone. This indicates that the present invention achieves controllable adjustment of the reaction occurrence location and improvement of the reaction rate.

[0045] The above description is only a preferred embodiment of the present invention. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the principle of the present invention, and these improvements and modifications should also be considered within the scope of protection of the present invention.

Claims

1. A multiphase reactive deposition apparatus, characterized in that, include: The horizontal reaction chamber includes a first pipe, a second pipe, and a third pipe connected in sequence; the diameter of the first pipe is smaller than the diameter of the second pipe, which is smaller than the diameter of the third pipe; the free end of the first pipe serves as the first inlet of the horizontal reaction chamber for introducing a mixture of oxygen and nitrogen gas, and the free end of the third pipe serves as the outlet of the horizontal reaction chamber. The second pipe has a second inlet on its side wall for introducing gallium acetylacetonate droplets; the third pipe has a substrate inside, and heating units are arranged at positions corresponding to the substrate on the outer periphery of the pipe.

2. The multiphase reactive deposition apparatus according to claim 1, characterized in that, The total length of the horizontal reaction chamber is 1.56~1.76m; the diameter of the first inlet is 0.04~0.06m; the second inlet is a pipe with a diameter of 0.04~0.06m and a length of 0.04~0.06m; the diameter of the outlet is 0.1~0.3m; and the length of the heated area of ​​the horizontal reaction chamber is 0.3~0.5m.

3. The multiphase reactive deposition apparatus according to claim 1, characterized in that, Nitrogen gas is used as a carrier gas to transport the gallium acetylacetonate droplets into the horizontal reaction chamber.

4. A method for analyzing the gallium oxide growth behavior based on the multiphase reactive deposition apparatus according to any one of claims 1 to 3, characterized in that, include: The constructed three-dimensional geometric model of the horizontal reaction chamber is meshed to obtain a mesh file; Import the mesh file into the fluid dynamics simulation software, set the boundary conditions, and obtain the physical model; A computational model was constructed based on the flow motion of gallium acetylacetonate droplets, vaporization phase transition, gas phase oxidation reaction, and deposition of reaction products on the substrate surface. Select a multiphase flow solver based on the physical and computational models; Input the material parameters and control parameters into the multiphase flow solver to obtain the simulation results; Based on the constructed multiphase reaction coupling model and simulation results, the growth behavior analysis results of α-Ga2O3 are obtained; the multiphase reaction coupling model is used to calculate the mutual influence between physical fields in the horizontal reaction chamber; the physical fields include temperature field and flow field.

5. The method for analyzing gallium oxide growth behavior according to claim 4, characterized in that, The boundary conditions include the wall type, wall temperature, inlet conditions, and outlet conditions of the horizontal reaction chamber pipeline.

6. The gallium oxide growth behavior analysis method according to claim 4, characterized in that, The computational model constructed based on the flow-in motion of gallium acetylacetonate droplets, vaporization phase transition, gas-phase oxidation reaction, and deposition of reaction products on the substrate surface includes: A component transport model was constructed to calculate the physical motion of the gallium source; A mass change model is constructed, and the rate of mass change per unit time is calculated based on the remaining mass of gallium acetylacetonate in a single droplet. The formula is as follows: ； in, m is the rate of change of gallium acetylacetonate mass per unit time. Ga Let be the remaining mass of gallium acetylacetonate in a single droplet, t be time, and Sh be the Sherwood number. Let d be the diffusion coefficient of oxygen. p Let A be the droplet diameter. p The surface area of ​​the fog droplets. C represents the local oxygen concentration in the gas surrounding the droplets. s The equilibrium concentration of the equivalent reaction on the droplet surface; An equivalent reaction model was constructed, and the consumption of oxidant and the amount of α-Ga2O3 generated were calculated by equivalently calculating the mass conversion relationship of gallium acetylacetonate.

7. The method for analyzing gallium oxide growth behavior according to claim 4, characterized in that, The material parameters include gas phase parameters and liquid phase parameters; The gas phase parameters include the gaseous physical properties of oxygen, nitrogen, and gallium acetylacetonate, including molar mass, specific heat at constant pressure, enthalpy of formation, kinematic viscosity, and Prandtl number. The liquid phase parameters include the liquid physical properties of gallium acetylacetonate and the initial state parameters before the droplets are injected into the horizontal reaction chamber, including liquid density, specific heat at constant pressure, latent heat of vaporization, boiling point, and vaporization temperature.

8. The method for analyzing gallium oxide growth behavior according to claim 4, characterized in that, The control parameters include the initial time step, total simulation duration, result output interval, maximum Courant number, and maximum time step.

Images