Gallium oxide epitaxial wafer and preparation method thereof

By using HVPE technology to perform a two-stage growth process on a (011)-plane gallium oxide substrate and controlling the gas flow ratio, the problems of striped morphology and polycrystalline defects in gallium oxide epitaxial layers were solved, realizing a nanoscale surface and high-thickness gallium oxide epitaxial wafer, thus improving device performance.

CN122279739APending Publication Date: 2026-06-26CHINA ELECTRONICS TECH GRP NO 46 RES INST
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Patent Information

Application Number
CN202610264719.9
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2026-03-05
Publication Date
2026-06-26

AI Technical Summary

Technical Problem

Existing technologies suffer from problems such as striped morphology, particle aggregation, and polycrystalline defects when preparing gallium oxide epitaxial layers, resulting in poor epitaxial quality and failing to meet the requirements of high-voltage, high-power gallium oxide devices.

Method used

Using HVPE technology, a two-stage growth method is designed for (011)-plane gallium oxide substrates. The flow ratio of oxygen, chlorine and hydrogen is controlled to promote the generation of gallium chloride and the lateral diffusion of oxygen atoms, suppress crystal defects, and combine high flow rates of oxygen and hydrogen chloride to generate gallium oxide, thereby achieving rapid and high-thickness growth.

Benefits of technology

A gallium oxide epitaxial wafer with a nanoscale surface and high thickness was obtained, which reduced the epitaxial defect density and improved the quality of the epitaxial film, making it suitable for high-voltage and high-power gallium oxide devices.

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Abstract

The invention relates to the technical field of semiconductors, and particularly discloses a gallium oxide epitaxial wafer and a preparation method thereof. The preparation method of the gallium oxide epitaxial wafer comprises the following steps: S1, placing a (011)-surface gallium oxide substrate in a reaction chamber, introducing carrier gas, and then introducing oxygen, chlorine and hydrogen for first growth; s2, introducing oxygen and hydrogen chloride, and performing second growth on the gallium oxide substrate grown for the first time to obtain a gallium oxide epitaxial wafer; wherein in the step S1, the flow ratio of the oxygen to the chlorine is (2-3): 1; in the step S2, the flow of the oxygen is 200-400 sccm, and the flow ratio of the oxygen to the hydrogen chloride is (5-20): 1. According to the invention, the growth times and growth conditions of the gallium oxide epitaxial wafer in the preparation process are optimized, the epitaxial defect density is reduced, the epitaxial film quality is improved, and the preparation of the high-thickness gallium oxide epitaxial wafer with low surface defects and a nanoscale surface is realized.
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