Semiconductor device
By replacing capacitors with data storage patterns in DRAM devices, specific layouts of bit lines, board lines, channels, and word lines are formed, solving the process challenges caused by the horizontal extension of capacitors and improving integration and operating characteristics.
CN122294494APending Publication Date: 2026-06-26SAMSUNG ELECTRONICS CO LTD
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Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- SAMSUNG ELECTRONICS CO LTD
- Filing Date
- 2025-12-19
- Publication Date
- 2026-06-26
AI Technical Summary
Technical Problem
In DRAM devices, the horizontal extension of capacitors presents process challenges and results in low integration density.
Method used
By replacing capacitors with data storage patterns, an improved semiconductor device is formed, including first and second channels, transistors, and data storage patterns, through a specific layout of bit lines, plate lines, channels, and word lines formed on a substrate, thereby increasing integration.
Benefits of technology
This achieves improved integration and operating characteristics of semiconductor devices, avoids the complex processes of capacitors, and reduces structural size while maintaining data storage.
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Figure CN122294494A_ABST
Abstract
A semiconductor device includes: a bit line on a substrate; a plate line on the substrate, the plate line being spaced apart from the bit line in a first direction substantially parallel to an upper surface of the substrate facing the bit line; a first channel between the bit line and the plate line; a first word line, wherein the first channel is between the first word line and the substrate and extends in a second direction substantially parallel to the upper surface of the substrate and intersecting the first direction; a second channel between the first channel and the substrate; a data storage pattern between the bit line and the plate line, the data storage pattern being at the same distance from the substrate as the second channel; and a second word line between the second channel and the substrate, the second word line extending in the second direction.
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