Substrate processing apparatus and substrate processing method

Abstract

This application relates to a substrate processing apparatus and a substrate processing method. The substrate processing apparatus includes: a nozzle device having a liquid ejection section; a fluid supply system for supplying a processing liquid having a surface tension lower than that of residual liquid to the nozzle device; a horizontal drive device for maintaining the nozzle device in a position above a rotating substrate and moving it to multiple radially different portions of the substrate; and a control unit for controlling the fluid supply system and the horizontal drive device according to liquid processing conditions. The liquid processing conditions include: a liquid flow rate condition, specifying the flow rate of the processing liquid to be supplied to the nozzle device in each of the multiple portions of the substrate; and a liquid movement condition, specifying the movement speed of the nozzle device when moving in each of the multiple portions of the substrate to supply processing liquid to each of the multiple portions of the substrate.

Description

Technical Field

[0001] This invention relates to a substrate processing apparatus and a substrate processing method for performing specified treatments on a substrate. Background Technology

[0002] Substrate processing apparatus is used to perform various processing on substrates such as semiconductor substrates, substrates for FPD (Flat Panel Display) devices such as liquid crystal display devices or organic EL (Electro Luminescence) display devices, substrates for optical discs, substrates for magnetic disks, substrates for magneto-optical discs, substrates for photomasks, ceramic substrates, or substrates for solar cells.

[0003] In the manufacturing process of semiconductor devices, for example, photolithography is used to form a pattern of photosensitive resist on a substrate. By supplying a solution to the substrate on which the photosensitive resist is formed (solution treatment), various patterns such as wiring circuits are formed on the substrate.

[0004] The chemical treatment is stopped, and a cleaning process is performed to remove any residual chemical solution from the substrate after patterning. During the cleaning process, a cleaning solution is supplied to the chemically treated substrate. This replaces the chemical solution on the substrate. Then, a drying process is performed to remove any remaining cleaning solution from the substrate. Japanese Patent Application Publication No. 2017-157800 discloses a substrate processing system capable of sequentially performing the chemical treatment, cleaning process, and drying process within a single processing unit. Summary of the Invention

[0005] In the processing unit described in Japanese Patent Application Publication No. 2017-157800, a substrate held and rotated by a substrate holding mechanism is subjected to a chemical treatment. During the cleaning process following the chemical treatment, a specified amount of DIW (Deionized Water) is supplied to the upper surface of the substrate as a cleaning solution. After cleaning, IPA (Isopropyl Alcohol) is supplied to the substrate as a drying liquid. This sequentially replaces the DIW on the substrate with IPA. The IPA supplied to the substrate is dispersed to the sides of the substrate due to centrifugal force. This forms a drying zone in the center of the upper surface of the substrate. The drying of the substrate is promoted by supplying N2 gas to the drying zone.

[0006] In the series of processes, each fluid of IPA and N2 gas is supplied to the entire surface of the substrate by supplying fluid from the corresponding nozzle onto the substrate, and by moving the nozzle relative to the substrate.

[0007] However, the excessive consumption of fluid resources, including but not limited to chemical solutions and DIW, such as IPA and N2 gas, increases the cost of substrate processing. Furthermore, from an environmental perspective, an increase in the consumption of organic solvents such as IPA is undesirable. On the other hand, even if the amount of fluids such as IPA and N2 gas used is simply reduced, the substrate manufacturing yield will decrease if high-precision substrate processing cannot be performed.

[0008] The purpose of this invention is to provide a substrate processing apparatus and a substrate processing method that can suppress the consumption of fluid resources used in the processing of the substrate after patterning and perform substrate processing with high precision.

[0009] According to one aspect of the present invention, a substrate processing apparatus is a substrate processing apparatus for removing residual liquid remaining on a substrate after patterning; and includes: a rotation drive unit for rotating a substrate holding unit that holds the substrate; a nozzle device having a liquid ejection section; a fluid supply system for supplying a processing liquid having a surface tension lower than that of the residual liquid to the nozzle device; a movement drive unit for maintaining the nozzle device in one position above the substrate held by the substrate holding unit and moving it to multiple radially different portions of the substrate; and a control unit for controlling the fluid supply system and the movement drive unit according to liquid processing conditions; the liquid ejection section is formed such that, when the nozzle device is in the one position, the processing liquid supplied from the fluid supply system is ejected downwards; the liquid processing conditions include: a liquid flow rate condition that specifies the flow rate of the processing liquid to be supplied to the nozzle device in each of the multiple portions; and a liquid movement condition that specifies the movement speed of the nozzle device when moving in each of the multiple portions in order to supply the processing liquid to each of the multiple portions of the substrate.

[0010] Another aspect of the substrate processing apparatus according to the present invention is a substrate processing apparatus for removing processing liquid remaining on a substrate after patterning and drying the substrate; and comprising: a rotation drive unit for rotating a substrate holding unit that holds the substrate; a nozzle device having a first gas injection unit; a fluid supply system for supplying a first gas to the nozzle device; a movement drive unit for maintaining the nozzle device in one position above the substrate held by the substrate holding unit and moving it to multiple radially different portions of the substrate; and a control unit for controlling the fluid supply system and the movement drive unit according to gas processing conditions; the first gas injection unit is formed such that, when the nozzle device is in the one position, it injects the first gas supplied from the fluid supply system downwards; the gas processing conditions include: a gas flow rate condition that specifies the flow rate of the first gas to be supplied to the nozzle device in each of the multiple portions; and a gas movement condition that specifies the movement speed of the nozzle device when moving in each of the multiple portions in order to supply the first gas to each of the multiple portions of the substrate.

[0011] According to another aspect of the present invention, a substrate processing method is a substrate processing method that uses a nozzle device to remove residual liquid remaining on a patterned substrate from the substrate; the nozzle device has a liquid ejection section; the liquid ejection section is formed such that, when the nozzle device is in a certain position, processing liquid supplied to the nozzle device is ejected downward; the processing liquid has a surface tension lower than that of the residual liquid; the substrate processing method includes the following steps: holding the substrate by a substrate holding section and rotating it; and, according to liquid processing conditions, maintaining the nozzle device in the certain position above the substrate held by the substrate holding section, and moving it to a plurality of radially different portions of the substrate, and supplying the processing liquid to the plurality of portions of the substrate; the liquid processing conditions include: a liquid flow rate condition, specifying the flow rate of processing liquid to be supplied to the nozzle device in each of the plurality of portions; and a liquid movement condition, specifying the movement speed of the nozzle device when moving in each of the plurality of portions in order to supply processing liquid to each of the plurality of portions of the substrate.

[0012] According to another aspect of the present invention, a substrate processing method is a substrate processing method that uses a nozzle device to remove processing liquid remaining on a substrate after patterning and thereby dry the substrate; the nozzle device has a gas injection section; the gas injection section is formed such that a first gas supplied to the nozzle device is injected downwardly when the nozzle device is in a certain position; and the substrate processing method includes the following steps: holding the substrate by a substrate holding section and rotating it; and, according to gas processing conditions, maintaining the nozzle device in the certain position above the substrate held by the substrate holding section, and moving it to a plurality of radially different portions of the substrate, and supplying the first gas to the plurality of portions of the substrate; the gas processing conditions include: a gas flow rate condition, specifying the flow rate of the first gas to be supplied to the nozzle device in each of the plurality of portions; and a gas movement condition, specifying the movement speed of the nozzle device when moving in each of the plurality of portions in order to supply the first gas to each of the plurality of portions of the substrate.

[0013] According to the present invention, it is possible to suppress the consumption of fluid resources used in the processing of the substrate after patterning and to perform substrate processing with high precision. Attached Figure Description

[0014] Figure 1 This is a schematic side view of a substrate processing apparatus according to an embodiment of the present invention.

[0015] Figure 2 It means Figure 1 A schematic top view of the internal structure of the substrate processing apparatus.

[0016] Figure 3 yes Figure 1 A schematic perspective view of the nozzle device.

[0017] Figure 4 yes Figure 1 A schematic top view of the nozzle assembly.

[0018] Figure 5 yes Figure 4 A longitudinal section view of the nozzle device along the QQ line.

[0019] Figure 6 It means Figure 1 A schematic block diagram of the control system of the substrate processing device.

[0020] Figure 7 This is a top view showing an example of multiple segmented regions defined on the upper surface of the substrate W, which is the object of processing.

[0021] Figure 8This is a diagram illustrating an example of liquid handling conditions.

[0022] Figure 9 This is a diagram illustrating an example of gas processing conditions.

[0023] Figure 10 This is a block diagram illustrating an example of the configuration of a functional unit used for control based on liquid processing conditions and gas processing conditions.

[0024] Figure 11 It means Figure 10 The flowchart of the processing flow of multiple functional departments.

[0025] Figure 12 It means Figure 10 The flowchart of the processing flow of multiple functional departments.

[0026] Figure 13 It is used to illustrate its use. Figure 1 A timing diagram illustrating the operation of each component in a substrate processing apparatus when performing a series of processes on a substrate.

[0027] Figure 14 It means according to Figure 13 A schematic side view of the operation of each component of the substrate processing apparatus in a timing diagram.

[0028] Figure 15 It means according to Figure 13 A schematic side view of the operation of each component of the substrate processing apparatus in a timing diagram.

[0029] Figure 16 It means according to Figure 13 A schematic side view of the operation of each component of the substrate processing apparatus in a timing diagram.

[0030] Figure 17 It means according to Figure 13 A schematic side view of the operation of each component of the substrate processing apparatus in a timing diagram.

[0031] Figure 18 It means according to Figure 13 A schematic side view of the operation of each component of the substrate processing apparatus in a timing diagram.

[0032] Figure 19 It means according to Figure 13 A schematic side view of the operation of each component of the substrate processing apparatus in a timing diagram.

[0033] Figure 20 It means according to Figure 13 A schematic side view of the operation of each component of the substrate processing apparatus in a timing diagram.

[0034] Figure 21 It means according to Figure 13 A schematic side view of the operation of each component of the substrate processing apparatus in a timing diagram.

[0035] Figure 22 It means according to Figure 13 A schematic side view of the operation of each component of the substrate processing apparatus in a timing diagram.

[0036] Figure 23 It means according to Figure 13 A schematic side view of the operation of each component of the substrate processing apparatus in a timing diagram.

[0037] Figure 24 It means according to Figure 13 A schematic side view of the operation of each component of the substrate processing apparatus in a timing diagram.

[0038] Figure 25 It means possessing Figure 1 A schematic top view of an example of a substrate processing system of a substrate processing apparatus.

[0039] Figure 26 This is a schematic side view of a substrate processing apparatus according to other embodiments.

[0040] Figure 27 This is a diagram illustrating an example of temperature adjustment conditions.

[0041] Figure 28 This is a block diagram illustrating an example of the configuration of a functional unit used for control based on liquid processing conditions, gas processing conditions, and temperature adjustment conditions.

[0042] Figure 29 It means Figure 28 The flowchart of the processing flow of multiple functional departments.

[0043] Figure 30 This is a schematic side view of a substrate processing apparatus according to another embodiment.

[0044] Figure 31 This is a diagram illustrating an example of gaseous radiation conditions.

[0045] Figure 32 This is a block diagram illustrating an example of the configuration of a functional unit used to perform control based on liquid processing conditions, gas processing conditions, and gas emission conditions.

[0046] Figure 33 It means Figure 32 The flowchart of the processing flow of multiple functional departments. Detailed Implementation

[0047] Hereinafter, a substrate processing apparatus and substrate processing method according to an embodiment of the present invention will be described with reference to the accompanying drawings. In the following description, "substrate" refers to substrates used in FPD (Flat Panel Display) devices or organic EL (ElectroLuminescence) display devices, such as semiconductor substrates, optical disc substrates, magnetic disk substrates, magneto-optical disk substrates, photomask substrates, ceramic substrates, or solar cell substrates. Furthermore, the upper surface of the substrate refers to the surface facing upwards, and the lower surface of the substrate refers to the surface facing downwards. The upper surface of the substrate may be the circuit formation surface (front side) or the surface opposite to the circuit formation surface (back side). Furthermore, the substrate has a circular shape except for the notch when viewed from above.

[0048] Furthermore, the substrate processing apparatus described below performs chemical treatment, cleaning, and drying on the substrate to be processed. In this embodiment, chemical treatment is a process in which a specified pattern is formed on the upper surface of the substrate by supplying a chemical solution to the upper surface of the substrate. Cleaning is a process in which the chemical solution is rinsed off the upper surface of the substrate by supplying a cleaning solution to the upper surface of the substrate after chemical treatment. Drying is a process in which the substrate is dried by supplying a processing liquid having a surface tension lower than that of the cleaning liquid to the upper surface of the substrate after cleaning treatment, thereby replacing the cleaning liquid remaining on the substrate. In the following description, the processing liquid used in the drying process, that is, the processing liquid having a surface tension lower than that of the cleaning liquid, is referred to as the replacement liquid.

[0049] 1. Overview of the Substrate Processing Apparatus

[0050] Figure 1 This is a schematic side view of a substrate processing apparatus according to an embodiment of the present invention. Figure 2 It means Figure 1 A schematic top view of the internal structure of the substrate processing apparatus 1. Figure 2 In the middle, only show Figure 1 A portion of the constituent elements of the substrate processing apparatus 1. For example... Figure 1 As shown, the substrate processing apparatus 1 includes a substrate holding device 20, a cup device 30, a drain device 39, a chemical supply device 40, a cleaning fluid supply system 50, and a replacement fluid supply system 60. Furthermore, the substrate processing apparatus 1 includes a first gas supply system 70, a second gas supply system 80, a third gas supply system 90, a nozzle device 100, a nozzle moving device 150, and a control unit 200.

[0051] Furthermore, the substrate processing apparatus 1 includes a chamber CH that houses all the aforementioned components. The chamber CH has four side portions, a top plate portion, and a bottom. A transfer opening (not shown) is formed on one side portion of the chamber CH for transferring a substrate between the interior and exterior of the chamber CH. Additionally, an FFU (Filter Fan Unit) 10 is provided on the top plate portion of the chamber CH. The FFU 10 generates a downward airflow of clean air inside the chamber CH.

[0052] A substrate holding device 20 is disposed approximately at the bottom center of the chamber CH. The substrate holding device 20 includes a substrate holding part 21 and a rotation drive part 22. The rotation drive part 22 is, for example, an electric motor, and is fixed to the bottom of the chamber CH. The rotation drive part 22 has a rotation shaft extending upward. The substrate holding part 21 is connected to the upper end of the rotation shaft.

[0053] The substrate holding portion 21 is a rotary chuck of a mechanical chuck type that holds the outer peripheral end of the substrate W. Specifically, the substrate holding portion 21 includes a circular plate-shaped rotating base 21a and multiple rotating retaining pins 21b disposed on the periphery of the upper surface of the rotating base 21a. In the substrate holding portion 21, the lower peripheral end and the outer peripheral end of the substrate W disposed on the rotating base 21a are held by the multiple retaining pins 21b. In this state, the substrate W rotates in a horizontal position when the rotation drive portion 22 is activated. Figure 1 and Figure 2 In the figure, the substrate W held by the substrate holding device 20 is represented by a single-dotted line.

[0054] The chemical treatment, cleaning treatment, and drying treatment are performed by supplying various processing liquids to the upper surface of the substrate W, which is held and rotated by the substrate holding device 20. A cup device 30 and a drain device 39 are used to dispose of any liquids that may spill from the rotating substrate W during each treatment.

[0055] The cup device 30 includes an outer cup 30A, an inner cup 30B, and a cup driving unit 31. The outer cup 30A and the inner cup 30B each have a generally cylindrical shape, surrounding the substrate holding part 21 when viewed from above. Figure 2 Furthermore, the outer cup 30A is arranged to extend vertically. The inner diameter of the outer cup 30A is larger than the outer diameter of the inner cup 30B. Therefore, the inner cup 30B is positioned inside the outer cup 30A. In addition, both the outer cup 30A and the inner cup 30B are configured to be movable vertically.

[0056] The cup drive unit 31 includes an actuator such as an electric motor or a cylinder. The cup drive unit 31 moves the outer cup 30A and the inner cup 30B between preset upper and lower cup positions, respectively, according to the processing performed on the substrate W.

[0057] The upper position of each cup 30A and 30B is a height position (vertical position) above the substrate W held by the substrate holding part 21, where the upper end of the cup is higher than the substrate W held by the substrate holding part 21. Thus, when each cup is in the upper position, it catches the processing liquid that spills from the substrate W. On the other hand, the lower position of each cup 30A and 30B is a height position below the substrate W held by the substrate holding part 21, where the upper end of the cup is lower than the substrate W held by the substrate holding part 21. In this embodiment, the upper position of the outer cup 30A is the same as the upper position of the inner cup 30B. Furthermore, the lower position of the outer cup 30A is the same as the lower position of the inner cup 30B.

[0058] The draining device 39 includes an outer container 39A and an inner container 39B corresponding to the outer cup 30A and the inner cup 30B, respectively. The outer container 39A and the inner container 39B each have an annular groove that opens upwards, guiding the liquid collected by the corresponding cup to the waste equipment in the plant.

[0059] A drug nozzle 41 is disposed within the chamber CH. The drug supply device 40 includes a drug supply system (not shown) and a drug nozzle moving device. The drug nozzle 41 is supported by the drug nozzle moving device. During drug treatment of the substrate W, the drug nozzle moving device positions the drug nozzle 41 at the center WC of the substrate W held by the substrate holding portion 21. Figure 2 The substrate W moves between a processing position above the substrate W and a standby position to the side of the substrate W. During the processing of the substrate W, the liquid supply system of the liquid supply device 40 supplies liquid to the liquid nozzle 41, which is in the processing position. This supplies liquid to the upper surface of the substrate W, which is held and rotated by the substrate holding part 21.

[0060] As a solution, hydrofluoric acid (HF), a mixture of sulfuric acid and hydrogen peroxide water (SPM), a mixture of ammonia water and hydrogen peroxide water (SC1), a mixture of hydrochloric acid and hydrogen peroxide water (SC2), diluted hydrofluoric acid (DHF), organic bases (such as tetramethylammonium hydroxide (TMAH), etc.), or buffered hydrofluoric acid (BHF) are used.

[0061] Inside the chamber CH, a cleaning fluid nozzle 51 is positioned at a designated location above the substrate holding device 20 and the cup device 30. The cleaning fluid nozzle 51 is fixed with its outlet facing the center WC of the substrate W held by the substrate holding part 21. During the cleaning process of the substrate W, the cleaning fluid supply system 50 supplies cleaning fluid to the cleaning fluid nozzle 51. As a result, cleaning fluid is supplied to the upper surface of the substrate W, which is held and rotated by the substrate holding part 21.

[0062] As cleaning solutions, pure water (deionized water), carbonated water, ozone water, magnetic water, ultra-diluted ammonia water (above 1 ppm and below 100 ppm), ultra-diluted hydrochloric acid water (above 1 ppm and below 100 ppm), reduced water (hydrogen water), or ionized water can be used.

[0063] The nozzle assembly 100 is located within the chamber CH and is supported by the nozzle moving device 150. The nozzle moving device 150 is as follows: Figure 2 As shown, the device includes a base portion 153, a support shaft 154, and an arm 155. The base portion 153 is fixed to the bottom of the chamber CH, located outside the outer cup 30A when viewed from above. The support shaft 154 is provided to extend upward from the base portion 153 by a fixed distance. An arm 155 extending horizontally is mounted on the upper end of the support shaft 154. A nozzle device 100 is mounted on the front end of the arm 155.

[0064] like Figure 1 As shown, the nozzle moving device 150 further includes a horizontal drive device 151 and a vertical drive device 152. Each of the horizontal drive device 151 and the vertical drive device 152 is, for example, built into... Figure 2 The base portion 153 includes an actuator such as an electric motor or a cylinder.

[0065] During the drying process of the substrate W, the horizontal drive device 151 rotates the support shaft 154 about its axis. As a result, the nozzle device 100 moves in an arc-shaped manner when viewed from above between the space above the substrate W held by the substrate holding part 21 and the standby position to the side of the substrate W (see reference). Figure 2 (The arrow is a thick solid line).

[0066] Furthermore, the vertical drive device 152 moves the support shaft 154 in the vertical direction. As a result, during the drying process of the substrate W, the horizontal drive device 151 moves the nozzle device 100 between the upper nozzle position and the lower nozzle position in the space above the substrate W held by the substrate holding part 21.

[0067] In the following description, the height position of the nozzle device 100 refers to the height position of the lower end of the nozzle device 100. The upper nozzle position is a height position higher than the upper cup positions of the outer cup 30A and the inner cup 30B, and a height position higher than the substrate W held by the substrate holding portion 21 by a specified distance (e.g., about 30 mm). The lower nozzle position is a height position lower than the upper nozzle position, and a height position higher than the substrate W held by the substrate holding portion 21.

[0068] During the drying process of the substrate W, the displacement liquid supply system 60, the first gas supply system 70, the second gas supply system 80, and the third gas supply system 90 supply displacement liquid, the first gas, the second gas, and the third gas to the nozzle device 100, respectively.

[0069] As described above, the replacement fluid is a treatment fluid with a lower surface tension than the cleaning fluid used in the cleaning process immediately preceding the drying process. An organic solvent is used as this treatment fluid. In this embodiment, IPA (isopropanol) is used as the replacement fluid. Alternatively, other organic solvents such as HFE (hydrofluoroether), methanol, ethanol, or acetone can be used instead of IPA as the replacement fluid. Furthermore, the replacement fluid can also be a mixture of an organic solvent and pure water.

[0070] In this embodiment, the first gas, the second gas, and the third gas are nitrogen. Alternatively, the first gas, the second gas, and the third gas can be any inert gas; argon or helium can also be used instead of nitrogen. Furthermore, the first gas, the second gas, and the third gas can be the same type of inert gas, and at least one gas can be a different type of inert gas from the others.

[0071] The control unit 200 controls each part of the substrate processing apparatus 1 by performing chemical treatment, cleaning, and drying on the substrate W. Details of the control unit 200 will be described later.

[0072] 2. Composition of the nozzle device 100

[0073] The configuration of the nozzle device 100 will be described. Figure 3 yes Figure 1 A schematic perspective view of the nozzle device 100. Figure 4 yes Figure 1 A schematic top view of the nozzle device 100. Figure 5 yes Figure 4 A longitudinal sectional view of the nozzle device 100 along the QQ line.

[0074] like Figure 3 As shown, the nozzle device 100 includes a nozzle body portion 101 having a generally cylindrical shape. In the substrate processing apparatus 1, the nozzle device 100 is supported by the nozzle moving device 150 in a posture extending in the vertical direction about the axis (central axis) of the nozzle body portion 101.

[0075] The nozzle body 101 has an upper surface 110, a lower surface 120, and an outer peripheral surface 130. The upper surface 110 is circular in shape and faces upward when the nozzle assembly 100 is in one position. The lower surface 120 is circular in shape and faces downward when the nozzle assembly 100 is in one position. The central portion of the lower surface 120 is recessed into a mortar shape. The outer peripheral surface 130 is a cylindrical surface that connects the outer edge of the upper surface 110 and the outer edge of the lower surface 120.

[0076] In the nozzle body portion 101, two through holes 102 and 103 are formed, extending vertically and approaching each other along the axis of the nozzle body portion 101. A component constituting... Figure 1 The displacement fluid supply system 60 is part of the displacement fluid piping 61. In another through-hole 103, a component constituting... Figure 1 The first gas piping 71 is a part of the first gas supply system 70.

[0077] like Figure 5 As shown, with the displacement fluid pipe 61 inserted into the through hole 102, the front end of the displacement fluid pipe 61 is located at the lower end of the nozzle device 100, functioning as a displacement fluid outlet 62 that sprays displacement fluid downwards. On the other hand, with the first gas pipe 71 inserted into the through hole 103, the front end of the first gas pipe 71 is located at the lower end of the nozzle device 100, functioning as a first gas injection port 72 that sprays the first gas downwards. Figure 3 and Figure 5 In the diagram, the flow of the displacement fluid ejected from the nozzle device 100 via the displacement fluid piping 61 is indicated by a thick solid arrow. Furthermore, the flow of the first gas ejected from the nozzle device 100 via the first gas piping 71 is indicated by a thick dashed arrow.

[0078] like Figure 3 As shown, near the lower end of the outer peripheral surface 130 of the nozzle body 101, a second gas injection port 131 and a third gas injection port 132, extending circumferentially, are formed in a ring shape covering the entire circumference of the outer peripheral surface 130. The third gas injection port 132 is positioned above the second gas injection port 131, close to it. Figure 3 In order to make the shape easier to understand, dot patterns are added to the second gas injection port 131 and the third gas injection port 132.

[0079] On the outer peripheral surface of the nozzle body 101, a connection is formed. Figure 1 The second gas piping 81, which is part of the second gas supply system 80, and is connected to form Figure 1 The third gas piping 91 is a part of the third gas supply system 90.

[0080] like Figure 5 As shown, inside the nozzle body 101, a gas flow path 141 is formed to guide the second gas supplied from the second gas pipe 81 to the second gas injection port 131. Furthermore, inside the nozzle body 101, a gas flow path 142 is formed to guide the third gas supplied from the third gas pipe 91 to the third gas injection port 132.

[0081] Therefore, when supplying the second gas to the nozzle device 100, such as Figures 3-5 As indicated by the thick dashed arrow, the second gas is injected from the second gas injection port 131 through the second gas piping 81 and the gas flow path 141. The gas flow of the second gas injected from the second gas injection port 131 extends radially in a direction orthogonal to the axis of the nozzle body 101.

[0082] Furthermore, when supplying the third gas to the nozzle device 100, such as Figures 3-5 As indicated by the arrow with a medium-thick double-dotted line, the third gas is injected from the third gas injection port 132 through the third gas pipe 91 and the gas flow path 142. The airflow of the third gas injected from the third gas injection port 132 is radially extended in the same direction as the airflow of the second gas, orthogonal to the axis of the nozzle body 101.

[0083] 3. Control system of substrate processing apparatus 1

[0084] The control system of substrate processing apparatus 1, and Figure 1 The structure of the control unit 200 will be explained together. Figure 6 It means Figure 1 A schematic block diagram of the control system of the substrate processing apparatus 1. (See diagram below.) Figure 6 As shown, the control unit 200 includes a CPU (Central Processing Unit) 201, RAM (Random Access Memory) 202, ROM (Read Only Memory) 203, and a storage device 204. RAM 202 serves as the operating area for the CPU 201. The system program is stored in ROM 203. The storage device 204 includes a storage medium such as a hard disk or semiconductor memory, storing the substrate cleaning program, liquid processing conditions, and gas processing conditions for performing the series of processes (chemical treatment, cleaning treatment, and drying treatment) on the substrate W.

[0085] Alternatively, the substrate cleaning program can be provided in a recording medium such as CD-ROM (Compact Disk-Read Only Memory) 209 and installed into ROM 203 or storage device 204. Or, the substrate cleaning program can also be sent from an external server of substrate processing apparatus 1 via a communication network and installed into ROM 203 or storage device 204.

[0086] The CPU 201 executes a substrate cleaning procedure and controls the operation of each part of the substrate processing apparatus 1. Specifically, the control unit 200 controls the substrate holding device 20. Therefore, the control unit 200 causes the substrate holding device 20 to hold the substrate W that has been brought into the substrate processing apparatus 1. Furthermore, in order to remove the substrate W from the substrate processing apparatus 1, the control unit 200 releases the substrate holding device 20 from holding the substrate W. Additionally, the control unit 200 causes the substrate W held by the substrate holding device 20 to rotate at a preset speed.

[0087] Furthermore, the control unit 200 controls the cup device 30. Thus, the control unit 200 causes... Figure 1 Each of the outer cup 30A and the inner cup 30B moves between the upper cup position and the lower cup position.

[0088] Furthermore, the control unit 200 controls the liquid supply device 40. Therefore, during liquid treatment, the control unit 200 moves the liquid nozzle 41 within the chamber CH and supplies liquid to the liquid nozzle 41. Additionally, the control unit 200 controls the cleaning fluid supply system 50. Therefore, during cleaning, the control unit 200 supplies cleaning fluid to the cleaning fluid nozzle 51.

[0089] Furthermore, the control unit 200 controls the replacement fluid supply system 60. Thus, when the cleaning fluid on the substrate W is replaced with replacement fluid during the drying process, the control unit 200 supplies replacement fluid to the nozzle device 100.

[0090] Furthermore, the control unit 200 controls the first gas supply system 70, the second gas supply system 80, and the third gas supply system 90. Thus, when removing the displacement liquid from the substrate W during the drying process, the control unit 200 supplies the first gas to the nozzle assembly 100. Additionally, during the drying process, the control unit 200 supplies the second and third gases to the nozzle assembly 100.

[0091] Furthermore, the control unit 200 controls the horizontal drive device 151 and the vertical drive device 152 of the nozzle moving device 150. Thus, during the drying process, the control unit 200 moves the nozzle device 100 within the chamber CH.

[0092] The liquid processing conditions stored in storage device 204 include liquid flow rate conditions and liquid movement conditions. These conditions will be described later. Furthermore, the gas processing conditions stored in storage device 204 include gas flow rate conditions and gas movement conditions. These conditions will also be described later.

[0093] The substrate processing apparatus 1 also includes an operation unit 190. The operation unit 190 includes, for example, a keyboard and pointing devices, and is configured to be operated by a user. By operating the operation unit 190, the user can input the liquid processing conditions and gas processing conditions. The input liquid processing conditions and gas processing conditions are stored in the storage device 204 of the control unit 200.

[0094] 4. Details and specific examples of liquid handling conditions

[0095] In the substrate processing apparatus 1 of this embodiment, multiple segmented regions for identifying the multiple portions are defined on multiple portions of the upper surface of the substrate W held by the substrate holding device 20 (multiple portions of the upper surface of the substrate W when viewed from above).

[0096] Figure 7 This is a top view illustrating an example of multiple segmented regions defined on the upper surface of the substrate W, which is the object of processing. Figure 7 In the middle, together with the substrate W, it is shown Figure 1 The substrate holding device 20 and the nozzle moving device 150.

[0097] exist Figure 7 In the example, a segmentation region R1 is defined at the central portion of the upper surface of substrate W, and a segmentation region R2 is defined outside the central portion of the upper surface of substrate W. Segmentation region R1 has a circular shape with the center WC of substrate W as a reference. The radius La of segmentation region R1 is half the radius of substrate W. Segmentation region R2 encompasses the outer peripheral end of substrate W and has an annular shape surrounding segmentation region R1. Furthermore, segmentation region R2 is adjacent to segmentation region R1. The length Lb between the inner and outer circumferences of segmentation region R2, which is also the width of segmentation region R2 in the radial direction of substrate W, is the same as the length La of segmentation region R1.

[0098] exist Figure 7 In order to make it easier to understand the shapes of the segmented regions R1 and R2 defined on the substrate W, a dot pattern is added to the segmented region R1 and a shading line is added to the segmented region R2.

[0099] During the drying process, as described above, the nozzle moving device 150 moves the nozzle device 100 from the standby position WP on the side of the substrate W to the space above the substrate W. Furthermore, the nozzle moving device 150 moves the nozzle device 100 from the space above the substrate W to the standby position WP.

[0100] exist Figure 7 In the diagram, the moving path MP of the nozzle device 100 during the horizontal drying process is represented by a thick double-dotted line. The moving path MP extends in an arc shape. One end of the moving path MP coincides with the center WC of the substrate W when viewed from above, and the other end of the moving path MP coincides with the standby position WP when viewed from above.

[0101] In the following description, such as Figure 7 The image shows three positions on the moving path MP, indicated by three black dots. These positions are designated as position 1 (p1), position 2 (p2), and position 3 (p3). Position 1 (p1) coincides with the center WC of the substrate W and is located at one end of the moving path MP when viewed from above. Position 2 (p2) is the position on the moving path MP that coincides with the boundaries of the segmented regions R1 and R2 when viewed from above. Position 3 (p3) is the position on the moving path MP that coincides with the outer periphery of the substrate W when viewed from above.

[0102] During the drying process, when the cleaning liquid on the substrate W is replaced with a replacement liquid, the nozzle device 100 sprays the replacement liquid downwards and, when viewed from above, moves from position 1 p1 to position 3 p3 along the movement path MP. In this case, during the movement path MP from position 1 p1 to position 2 p2, the nozzle device 100 is positioned above the substrate W and faces the segmented region R1 of the substrate W. Furthermore, during the movement path MP from position 2 p2 to position 3 p3, the nozzle device 100 is positioned above the substrate W and faces the segmented region R2 of the substrate W.

[0103] Here, the liquid flow rate condition specifies the flow rate (amount of displacement liquid to be supplied per unit time) of the displacement liquid to be supplied to multiple portions (segmented regions R1, R2) of the substrate W. More specifically, in this example, the liquid flow rate condition specifies the flow rate of displacement liquid to be supplied to the nozzle device 100 when the nozzle device 100 moves along the moving path MP, with the nozzle device 100 facing each portion of the substrate W.

[0104] Furthermore, the liquid movement conditions define the moving speed of the nozzle device 100 when it moves in the space above each part of the substrate W in order to supply displacement liquid to multiple portions (segmented regions R1, R2) of the substrate W. More specifically, in this example, the liquid movement conditions define the horizontal moving speed of the nozzle device 100 when it faces each portion of the substrate W while supplying displacement liquid to the substrate W.

[0105] Figure 8 This is a diagram illustrating an example of liquid handling conditions. In Figure 8 The upper section uses a diagram to illustrate the liquid flow conditions in liquid handling. Figure 8 In the chart above, the vertical axis represents the flow rate of the displacement fluid ejected from the nozzle device 100, and the horizontal axis represents... Figure 7 The position on the movement path MP.

[0106] according to Figure 8 The liquid flow rate conditions are defined such that the ejection flow rate of the displacement liquid when the nozzle device 100 is positioned opposite the partition region R1 of the substrate W is fixed at a flow rate f01. On the other hand, the ejection flow rate of the displacement liquid when the nozzle device 100 is positioned opposite the partition region R2 of the substrate W is defined such that it increases at a fixed ratio as the nozzle device 100 moves from the second position p2 to the third position p3. Therefore, the ejection flow rate of the displacement liquid when the nozzle device 100 is in the third position p3 becomes a flow rate f02 that is greater than the ejection flow rate (flow rate f01) of the displacement liquid when the nozzle device 100 is in the second position p2. In the liquid flow rate conditions of this example, the flow rate f01 is, for example, 200 (ml / min), and the flow rate f02 is, for example, 500 (ml / min).

[0107] exist Figure 8 The following section uses diagrams to illustrate the liquid movement conditions in liquid handling. Figure 8 In the chart above, the vertical axis represents the moving speed of the nozzle device 100, and the horizontal axis represents... Figure 7 The position on the movement path MP.

[0108] according to Figure 8 The liquid movement conditions are specified such that the moving speed of the nozzle device 100 when it is in a position opposite to the segmented region R1 decreases as the nozzle device 100 moves from the first position p1 to the second position p2. More specifically, the moving speed of the nozzle device 100 is specified as a maximum speed v01 at the first position p1 and a speed v02 lower than v01 at the second position p2. Furthermore, the moving speed of the nozzle device 100 varies slowly within a fixed range from the first position p1 and a fixed range from the second position p2, and varies relatively rapidly in other parts.

[0109] Furthermore, the moving speed of the nozzle device 100 when in a position opposite to the segmented region R2 is specified such that it decreases as the nozzle device 100 moves from the second position p2 towards the third position p3. More specifically, the moving speed of the nozzle device 100 is specified as speed v02 at the second position p2 and speed 0 at the third position p3. Moreover, the moving speed of the nozzle device 100 is specified such that it changes slowly from the second position p2 to approximately the midpoint between the second position p2 and the third position p3, and then changes sharply near the third position p3.

[0110] Here, we envision a situation where, in the space above a rotating substrate W, the nozzle device 100 moves along a moving path MP from a first position p1 to a third position p3 at a fixed speed. In this case, the closer the nozzle device 100 is to the first position p1, which is the center WC of the substrate W, the smaller the area on the substrate W facing the nozzle device 100 per unit time. Furthermore, the closer the nozzle device 100 is to the third position p3, which is the outer periphery of the substrate W, the larger the area on the substrate W facing the nozzle device 100 per unit time. Therefore, when the nozzle device 100 is moved, and fluid is further supplied to the substrate W from the nozzle device 100 at a fixed flow rate, the area closer to the center WC of the substrate W receives more fluid per unit time. Conversely, the area closer to the outer periphery of the substrate W receives less fluid per unit time. Therefore, relative to the center WC and its surrounding area, the fluid processing efficiency on the substrate W decreases near the outer periphery of the substrate W.

[0111] In response to this problem, according to Figure 8 In the liquid handling conditions, when the cleaning liquid on the substrate W is replaced with a replacement liquid during the drying process, the spray volume of the replacement liquid from the nozzle device 100 and the moving speed of the nozzle device 100 are adjusted. This prevents excessive amounts of replacement liquid supplied to the center WC and its periphery of the substrate W per unit time. Furthermore, by increasing the amount of replacement liquid supplied to the outer peripheral end and its vicinity of the substrate W per unit time, the replacement efficiency of the cleaning liquid by the replacement liquid is improved in the outer peripheral end and its vicinity of the substrate W.

[0112] 5. Details and specific examples of gas processing conditions

[0113] During the drying process, when removing the displacement liquid from the substrate W, the nozzle device 100 sprays the first gas downwards, and when viewed from above, moves along the movement path MP from the first position p1 to the third position p3. In this case, the nozzle device 100 is sequentially aligned with the segmented regions R1 and R2 of the substrate W.

[0114] Here, the gas flow rate condition specifies the flow rate (amount of the first gas to be supplied per unit time) of the first gas that should be supplied (injected) to multiple portions (segmented regions R1, R2) of the substrate W. More specifically, in this example, the gas flow rate condition specifies the flow rate of the first gas to be supplied to the nozzle device 100 when the nozzle device 100 moves along the moving path MP, with the nozzle device 100 facing each portion of the substrate W.

[0115] Furthermore, the gas movement conditions define the moving speed of the nozzle device 100 when it moves in the space above each part of the substrate W in order to supply the first gas to multiple portions (segmented regions R1, R2) of the substrate W. More specifically, in this example, the gas movement conditions define the horizontal moving speed of the nozzle device 100 when it faces each portion of the substrate W while supplying the first gas to the substrate W.

[0116] Figure 9 This is a diagram illustrating an example of gas processing conditions. In Figure 9 The upper section uses a diagram to illustrate the gas flow conditions in the gas processing setup. Figure 9 In the chart above, the vertical axis represents the injection flow rate of the first gas ejected from the nozzle device 100, and the horizontal axis represents... Figure 7 The position on the movement path MP.

[0117] according to Figure 9 Regarding the gas flow conditions, the injection flow rate of the first gas when the nozzle device 100 is positioned opposite the partition region R1 of the substrate W is fixed at a flow rate f11. On the other hand, the injection flow rate of the first gas when the nozzle device 100 is positioned opposite the partition region R2 of the substrate W is specified such that it increases at a fixed ratio as the nozzle device 100 moves from the second position p2 to the third position p3. Therefore, the injection flow rate of the first gas when the nozzle device 100 is in the third position p3 becomes a flow rate f12 that is greater than the injection flow rate (flow rate f11) of the first gas when the nozzle device 100 is in the second position p2. In the gas flow conditions of this example, the flow rate f11 is, for example, 50 (l / min), and the flow rate f12 is, for example, 100 (l / min).

[0118] exist Figure 9 The following section uses diagrams to illustrate the gas movement conditions in the gas processing conditions. Figure 9 In the chart above, the vertical axis represents the moving speed of the nozzle device 100, and the horizontal axis represents... Figure 7 The position on the movement path MP.

[0119] according to Figure 9The gas movement conditions, the moving speed of the nozzle device 100 when it is in a position opposite to the segmented region R1, and Figure 8 Similarly, the liquid movement conditions are defined such that the speed decreases as the nozzle device 100 moves from the first position p1 towards the second position p2. More specifically, the movement speed of the nozzle device 100 is defined as a maximum speed v11 at the first position p1 and a speed v12 lower than v11 at the second position p2. Furthermore, the movement speed of the nozzle device 100 varies slowly within a fixed range from the first position p1 and a fixed range from the second position p2, and varies relatively rapidly in other parts.

[0120] Furthermore, the moving speed of the nozzle device 100 when it is positioned opposite to the segmented region R2 is... Figure 8 Similarly, the liquid movement conditions are defined such that the nozzle device 100 decreases as it moves from the second position p2 towards the third position p3. More specifically, the movement speed of the nozzle device 100 is defined as speed v12 at the second position p2 and speed 0 at the third position p3. Furthermore, the movement speed of the nozzle device 100 is defined such that it changes slowly from the second position p2 to approximately the midpoint between the second position p2 and the third position p3, and then changes sharply near the third position p3.

[0121] Thus, according to Figure 9 In the liquid processing conditions, when removing the displacement liquid from the substrate W during the drying process, the injection rate of the first gas from the nozzle device 100 and the moving speed of the nozzle device 100 are adjusted. This prevents excessive amounts of the first gas supplied to the center WC and its periphery of the substrate W per unit time. Furthermore, by increasing the amount of the first gas supplied to the outer peripheral end and its vicinity of the substrate W per unit time, the removal efficiency of the displacement liquid by the first gas is improved in the outer peripheral end and its vicinity of the substrate W.

[0122] 6. Functional unit for controlling based on liquid handling conditions and gas handling conditions

[0123] Figure 10 This is a block diagram illustrating an example of the configuration of a functional unit used for control based on liquid processing conditions and gas processing conditions. For example... Figure 10As shown, the CPU 201 of the control unit 200, serving as a functional unit for controlling liquid and gas processing conditions, includes an operation receiving unit 211, a movement condition acquisition unit 212, a flow rate condition acquisition unit 213, a horizontal movement control unit 214, a displacement fluid flow control unit 215, and a first gas flow control unit 216. These functional units are implemented by the CPU 201 of the control unit 200 executing the substrate cleaning program stored in the storage device 204. Furthermore, some or all of these functional units may also be implemented using hardware such as electronic circuits.

[0124] Operations Acceptance Department 211 accepts applications from Figure 6 The operation unit 190 inputs liquid processing conditions and gas processing conditions. In addition, the operation receiving unit 211 stores the received liquid processing conditions and gas processing conditions in the storage device 204.

[0125] During the drying process of the substrate W, the movement condition acquisition unit 212 acquires the liquid movement conditions from the liquid processing conditions stored in the storage device 204. Furthermore, the movement condition acquisition unit 212 acquires the gas movement conditions from the gas processing conditions stored in the storage device 204. The movement condition acquisition unit 212 then provides the acquired liquid movement conditions and gas movement conditions to the horizontal movement control unit 214.

[0126] During the drying process of the substrate W, the flow condition acquisition unit 213 acquires the liquid flow conditions from the liquid processing conditions stored in the storage device 204. Furthermore, the flow condition acquisition unit 213 acquires the gas flow conditions from the gas processing conditions stored in the storage device 204. The flow condition acquisition unit 213 then provides the acquired liquid flow conditions and gas flow conditions to the displacement fluid flow control unit 215 and the first gas flow control unit 216, respectively.

[0127] When the drying process of substrate W begins, the horizontal movement control unit 214 controls the liquid movement based on the liquid movement conditions provided by the movement condition acquisition unit 212. Figure 6 The horizontal drive device 151 of this embodiment includes a pulse motor as a drive source. In this case, the horizontal movement control unit 214 controls the rotation angle of the pulse motor by providing one or more drive pulses to the horizontal drive device 151. At this time, the horizontal movement control unit 214 detects the rotation angle of the pulse motor by counting the number of drive pulses provided to the horizontal drive device 151.

[0128] Furthermore, the horizontal movement control unit 214 detects the position of the nozzle device 100 on the movement path MP based on the detected rotation angle of the pulse motor. In other words, the horizontal movement control unit 214 detects the relative position of the nozzle device 100 with respect to the substrate W in the horizontal plane.

[0129] Alternatively, the horizontal drive unit 151 may also have a motor with a built-in encoder. In this case, the horizontal movement control unit 214 can detect the rotation angle of the motor and the position of the nozzle device 100 on the movement path MP based on the output signal of the encoder of the horizontal drive unit 151.

[0130] In addition, the horizontal movement control unit 214 provides information indicating the position of the nozzle device 100 on the detected movement path MP to the displacement fluid flow control unit 215 and the first gas flow control unit 216.

[0131] When the replacement fluid flow control unit 215 replaces the cleaning fluid on the substrate W with replacement fluid during the drying process of the substrate W, it controls the flow based on the fluid flow conditions and information provided by the horizontal movement control unit 214. Figure 6 The displacement fluid supply system 60. Thus, displacement fluid is supplied to the nozzle device 100 at a flow rate according to the liquid flow conditions, based on the position of the nozzle device 100 relative to the substrate W.

[0132] When the first gas flow control unit 216 removes the displacement liquid on the substrate W during the drying process, it controls the gas flow based on the gas flow conditions and information provided by the horizontal movement control unit 214. Figure 6 The first gas supply system 70. Thus, based on the position of the nozzle device 100 relative to the substrate W, the first gas is supplied to the nozzle device 100 at a flow rate according to the gas flow conditions.

[0133] Figure 11 and Figure 12 It means Figure 10 A flowchart of the processing flow for multiple functional units. Additionally, in Figure 11 and Figure 12 In the middle, because it shows Figure 10 The processing of multiple functional units is omitted, so the processing related to the vertical movement of the nozzle device 100 and the processing of supplying the second gas and the third gas to the nozzle device 100 are omitted.

[0134] pass Figure 6 The CPU 201 executes the substrate cleaning procedure and begins the drying process of the substrate W at a specified time. In the initial state, the storage device 204 stores liquid processing conditions and gas processing conditions in advance based on the operation of the user's operation unit 190.

[0135] When the drying process of substrate W begins, the movement condition acquisition unit 212 and the flow condition acquisition unit 213 acquire the liquid movement condition and the liquid flow condition, respectively (step S10). Next, the control unit 200 controls the rotation drive unit 22 of the substrate holding device 20 to rotate the substrate W at a specified speed (step S11).

[0136] Next, the horizontal movement control unit 214 controls the horizontal direction drive device 151 to move the nozzle device 100 to the first position p1 (step S12). When the nozzle device 100 reaches the first position p1, the horizontal movement control unit 214 begins to move the nozzle device 100 according to the obtained liquid movement conditions (step S13).

[0137] Next, the horizontal movement control unit 214 counts the drive pulses provided to the horizontal direction drive device 151, and detects the position of the nozzle device 100 in the movement path MP based on the count (step S14).

[0138] Next, the displacement fluid flow control unit 215 determines the flow rate of displacement fluid to be supplied to the nozzle device 100 at the current time based on the fluid flow conditions and the detected position of the nozzle device 100 (step S15).

[0139] Next, the displacement fluid flow control unit 215 controls the displacement fluid supply system 60 to supply displacement fluid to the nozzle device 100 at a determined flow rate (step S16). Then, the horizontal movement control unit 214 determines whether the nozzle device 100 is in the third position p3 (step S17).

[0140] If the nozzle device 100 is not in the third position p3, the process returns to step S14. On the other hand, if the nozzle device 100 is in the third position p3, the displacement fluid flow control unit 215 stops supplying displacement fluid to the nozzle device 100 (step S18).

[0141] Next, the movement condition acquisition unit 212 and the flow rate condition acquisition unit 213 acquire the gas movement conditions and the gas flow rate conditions, respectively (step S19). Furthermore, the horizontal movement control unit 214 controls the horizontal direction drive device 151 to move the nozzle device 100 back to the first position p1 (step S20). When the nozzle device 100 reaches the first position p1, the horizontal movement control unit 214 begins to move the nozzle device 100 according to the acquired gas movement conditions (step S21).

[0142] Next, the horizontal movement control unit 214 detects the position of the nozzle device 100 in the movement path MP in the same way as in step S14 (step S22).

[0143] Next, the first gas flow control unit 216 determines the flow rate of the first gas to be supplied to the nozzle device 100 at the current time based on the gas flow conditions and the detected position of the nozzle device 100 (step S23).

[0144] Next, the first gas flow control unit 216 supplies the first gas to the nozzle device 100 at a determined flow rate by controlling the first gas supply system 70 (step S24). Then, the horizontal movement control unit 214 determines whether the nozzle device 100 is in the third position p3 (step S25).

[0145] If the nozzle device 100 is not in the third position p3, the process returns to step S22. On the other hand, if the nozzle device 100 is in the third position p3, the first gas flow control unit 216 stops supplying the first gas to the nozzle device 100 (step S26).

[0146] Finally, the control unit 200 stops the rotation of the substrate W by controlling the rotation drive unit 22 of the substrate holding device 20 (step S27), and moves the nozzle device 100 to the standby position WP (step S28). Thus, the drying process of the substrate W is completed.

[0147] 7. Operation of substrate processing apparatus 1

[0148] For passing Figure 6 The specific operation example of the substrate processing apparatus 1 when the CPU201 executes the substrate cleaning program and performs a series of processes on the substrate W will be described. Figure 13 It is used to illustrate its use. Figure 1 A timing diagram illustrating the operation of each component in a substrate processing apparatus 1 when performing a series of processes on a substrate. Figures 14-24 It means according to Figure 13 A schematic side view of the operation of each component of the substrate processing apparatus 1, which is a timing diagram. The diameter of the substrate W, which is the object of processing in this example, is set to 300 mm.

[0149] Figure 13 The left end shows 10 items that are the control objects of the operation of the substrate processing apparatus 1. The 10 items are "medicine solution", "cleaning solution", "nozzle height position", "nozzle horizontal position", "displacement solution", "first gas", "second and third gas", "outer cup height position", "inner cup height position" and "substrate rotation speed", which are arranged vertically from the top section (segment 1) to the bottom section (segment 10).

[0150] To the right of the 10 items, a common timeline is used to show the control content corresponding to these items in chronological order. To the right of the first item, "Medicinal Solution," it shows whether medicinal solution is supplied from the medicinal solution supply device 40 to the medicinal solution nozzle 41 (supply or stop). To the right of the second item, "Cleaning Fluid," it shows whether cleaning fluid is supplied from the cleaning fluid supply system 50 to the cleaning fluid nozzle 51 (supply or stop).

[0151] To the right of the third item, "Height Position of Nozzle Device," the vertical position (upper nozzle position and lower nozzle position) of the nozzle device 100 in the substrate processing apparatus 1 is shown. To the right of the fourth item, "Horizontal Position of Nozzle Device," the horizontal position of the nozzle device 100 in the substrate processing apparatus 1 is shown. The "standby position" shown as the horizontal position is... Figure 7 The standby position WP. Furthermore, "substrate outer periphery end" refers to the position of the nozzle device 100 when, viewed from above, the nozzle device 100 coincides with the outer periphery end of the substrate W, that is, when the nozzle device 100 is above the outer periphery end of the substrate W. Figure 7 The third position p3). Furthermore, "substrate center" refers to the position of the nozzle device 100 when viewed from above, coinciding with the center WC of the substrate W, that is, when the nozzle device 100 is above the center WC of the substrate W. Figure 7 The first position (p1).

[0152] To the right of item 5, "Displacement Fluid," it indicates whether displacement fluid is supplied from displacement fluid supply system 60 to nozzle device 100 (supply or stop). To the right of item 6, "First Gas," it indicates whether first gas is supplied from first gas supply system 70 to nozzle device 100 (supply or stop). To the right of item 7, "Second and Third Gases," it indicates whether second and third gases are supplied from second gas supply system 80 and third gas supply system 90 to nozzle device 100 (supply or stop).

[0153] To the right of item 8, "Height Position of the Outer Cup," the vertical position of the outer cup 30A in the substrate processing apparatus 1 is shown. To the right of item 9, "Height Position of the Inner Cup," the vertical position of the inner cup 30B in the substrate processing apparatus 1 is shown. To the right of item 10, "Rotation Speed ​​of the Substrate," the variation in the rotation speed of the substrate W, held and rotated by the substrate holding device 20, is shown.

[0154] exist Figures 14-24 In the schematic side view of the side view, Figure 7 The positions p1, p2, and p3 on the movement path MP are represented by thick dashed arrows.

[0155] First, in the initial state (time point t0), the "medicine solution" is stopped from being supplied to the medicine solution nozzle 41. Furthermore, the "cleaning fluid" is stopped from being supplied to the cleaning fluid nozzle 51. Additionally, the "displacement fluid," "first gas," and "second and third gases" are stopped from being supplied to the nozzle device 100. Furthermore, the "nozzle height position" remains at the nozzle upper position, the "nozzle horizontal position" remains in the standby position, and the "outer cup height position" and "inner cup height position" remain at the cup lower position. Furthermore, in the initial state, since the substrate W is not yet held in the substrate holding device 20, the "substrate rotation speed" is 0 rpm.

[0156] At time t1, substrate W is introduced into chamber CH of substrate processing apparatus 1 and placed onto substrate holding portion 21. Substrate W is then held by substrate holding portion 21. Next, from time t2 to time t3, substrate W undergoes chemical treatment. Specifically, from time t2, rotation of substrate W held by substrate holding portion 21 begins. Furthermore, its rotational speed increases from 0 rpm to a relatively high first speed and is maintained at the first speed. In this embodiment, the first speed is 1500 rpm.

[0157] While the rotational speed of substrate W is maintained at the first speed, such as Figure 14 As shown, the drug nozzle 41 is positioned above the substrate W at a processing location (position 1 p1 in this example). Furthermore, during a predetermined fixed period, drug solution L1 is ejected from the drug nozzle 41 toward the center WC of the substrate W. As a result, the liquid film of drug solution L1 extends to the entire upper surface of the substrate W.

[0158] As described above, the drug solution is processed. During the drug solution processing, the drug solution L1 is scattered from the rotating substrate W. To catch the scattered drug solution L1, an outer cup 30A is positioned on top of the container one moment before time point t2. Thus, the drug solution L1 caught by the outer cup 30A is discarded through the outer container 39A. Figure 14 In the middle, the height position of the upper end of the outer cup 30A, which is located on the cup, is indicated by the symbol RP.

[0159] Next, after stopping the ejection of chemical solution L1 from the chemical nozzle 41 onto the substrate W, a cleaning process is performed on the substrate W from time point t3 to time point t4. During the cleaning process, the rotational speed of the substrate W is maintained at the first speed. Furthermore, as... Figure 15 As shown, cleaning fluid L2 is sprayed from cleaning fluid nozzle 51 toward the center WC of substrate W. As a result, the liquid film of cleaning fluid L2 extends to the entire upper surface of substrate W, and the residual drug solution L1 on substrate W is replaced by cleaning fluid L2.

[0160] exist Figure 15Within the bubble frame marked with double dots, a partially enlarged cross-sectional view of the substrate W during the cleaning process is shown. According to this cross-sectional view, multiple grooves with depths in a direction orthogonal to the substrate W (vertical in this example) are formed on the upper surface of the substrate W in a specified pattern. Cleaning fluid L2 fills the entire interior of each groove.

[0161] As described above, a cleaning process is performed. During the cleaning process, the cleaning fluid L2 mainly scatters from the rotating substrate W. To catch the scattered cleaning fluid L2, the inner cup 30B is positioned on top of the container one moment before time t3. Thus, the cleaning fluid L2 caught by the inner cup 30B is discarded through the inner container 39B. Figure 15 In subsequent drawings, the height of the upper end of the inner cup 30B, which is located on the cup, is indicated by the symbol RP.

[0162] Next, after the cleaning process is completed, the substrate is dried from time point t4 to time point t6. During the drying process, firstly, as a preliminary step, from time point t4 to time point t5, the cleaning solution L2 remaining on the substrate W is replaced with replacement solution L3. Time points t41 and t42, as described below, represent specific time points between time points t4 and t5.

[0163] Specifically, as time t4 passes, while the nozzle device 100 remains at the nozzle position HP, the nozzle device 100 moves along... Figure 7 The movement path MP moves horizontally from the standby position WP to the first position p1. This movement action is related to... Figure 11 The movement of the nozzle device 100 corresponds to the process in step S12. The nozzle position HP is a height position higher than the cup positions of the outer cup 30A and the inner cup 30B. Thus, as Figure 16 As shown, the lower end of the nozzle device 100 ( Figure 5 The displacement liquid outlet 62 and the first gas injection outlet 72 are aligned with the center WC of the substrate W.

[0164] At time t4, the second gas and the third gas are also supplied to the nozzle device 100 from the second gas supply system 80 and the third gas supply system 90. Thus, as... Figure 16 As indicated by the thick solid arrow, from near the lower end of the nozzle assembly 100 (specifically, Figure 5 The second gas injection port 131 and the third gas injection port 132 form a gas flow F23 of the second gas and the third gas in the horizontal direction. In this embodiment, the flow rate of the second gas supplied to the nozzle device 100 is 72.5 L / min, and the flow rate of the third gas supplied to the nozzle device 100 is also 72.5 L / min.

[0165] Furthermore, at time point t4, by controlling the substrate holding device 20, the rotational speed of the substrate W decreases from a first speed to a second speed lower than the first speed, and is maintained at the second speed. In this embodiment, the second speed is 100 rpm.

[0166] At time t41, a small period following time t4, the supply of displacement fluid L3 from the displacement fluid supply system 60 to the nozzle device 100 begins. In this case, as... Figure 17 As shown, from the lower end of the nozzle device 100 ( Figure 5 The displacement liquid outlet 62) sprays displacement liquid L3 toward the center WC of the substrate W. As a result, the liquid film of displacement liquid L3 extends to the entire upper surface of the substrate W. At this time, as... Figure 17 As shown in the upper section of the bubble frame with double-dotted lines, the displacement fluid L3, ejected in a direction orthogonal to the substrate W, is smoothly guided into the interior of multiple grooves formed on the substrate W. Furthermore, because the displacement fluid L3 is ejected from the nozzle device 100 at the upper nozzle position HP, it impacts the surface of the substrate W with higher energy compared to the case where it is ejected from the nozzle device 100 at the lower nozzle position. Thus, the displacement fluid L3 more effectively replaces the cleaning fluid L2 remaining inside the groove located at the center WC of the substrate W.

[0167] However, in areas other than the center WC of substrate W, the displacement fluid L3 flows horizontally towards the periphery of substrate W, making it difficult to penetrate the interior of each tank. Therefore, as Figure 17 As shown in the lower section of the bubble frame with double-dotted lines, it is highly likely that most of the tank interior will retain residual cleaning fluid L2. Therefore, in this example, from time t42 to time t5, after a small period from time t41, while the nozzle device 100 is maintained at the nozzle position HP, the nozzle device 100 moves horizontally from position 1 p1 to position 3 p3. This movement is similar to... Figure 11 The operation of the nozzle device 100 begins in step S13. Therefore, the moving speed of the nozzle device 100 is adjusted according to its position on the moving path MP.

[0168] When the nozzle device 100 moves along the moving path MP, such as Figure 18 As shown, as the nozzle device 100 moves, the cleaning fluid L2 located in the tank directly below the nozzle device 100 is forcibly replaced by the replacement fluid L3. Then, as... Figure 19 As shown, at time t5, the nozzle device 100 reaches the outer peripheral end of the substrate, thereby filling all the grooves on the substrate W with replacement fluid L3 and removing cleaning fluid L2. The time from time t42 to time t5 is, for example, 5 seconds.

[0169] As described above, in the process of replacing the cleaning solution L2 on the substrate W with the replacement solution L3, the nozzle device 100 is maintained at the nozzle position HP. Furthermore, as described above, the nozzle position HP is located above the cup positions of the outer cup 30A and the inner cup 30B. Therefore, when the replacement solution L3 is sprayed onto the outer peripheral end of the substrate W and its surrounding area, the nozzle device 100 does not interfere with the outer cup 30A and the inner cup 30B.

[0170] The action of supplying displacement fluid L3 to nozzle device 100 from time point t42 to time point t5 and Figure 11 The processing corresponds to steps S14 to S17. Therefore, the supply amount of the displacement liquid L3 to the nozzle device 100, that is, the flow rate of the displacement liquid L3 ejected from the nozzle device 100 to the substrate W, is adjusted according to the position on the moving path MP.

[0171] For example, the flow rate of the replacement fluid L3 ejected from the nozzle device 100 is maintained at 200 (ml / min) during the period from when the nozzle device 100 moves from the first position p1 to the second position p2. Furthermore, the flow rate of the replacement fluid L3 ejected from the nozzle device 100 increases from 200 (ml / min) to 500 (ml / min) at a fixed rate during the period from when the nozzle device 100 moves from the second position p2 to the third position p3.

[0172] Next, as a post-drying process, from time point t5 to time point t6, the displacement solution L3 remaining on the substrate W is removed. Time points t51, t52, t53, and t54, as described below, represent specific time points between time point t5 and time point t6.

[0173] Specifically, as time t5 elapses, the supply of displacement fluid L3 from the displacement fluid supply system 60 to the nozzle device 100 is stopped. Then, as... Figure 20 As shown, with the nozzle device 100 maintained at the nozzle position HP, the nozzle device 100 moves along... Figure 7 The movement path MP moves horizontally from position 3 p3 to position 1 p1. This movement action is related to... Figure 12 The movement of the moving nozzle device 100 corresponds to the process in step S20.

[0174] Next, at time t51, a small period after time t5, with the nozzle device 100 positioned above the center WC of the substrate W, the first gas is supplied from the first gas supply system 70 to the nozzle device 100. This supply operation occurs during... Figure 12The process is performed between step S20 and step S21. Here, the flow rate of the first gas supplied to the nozzle device 100 is 5 L / min, 25 L / min, or 50 L / min. In this case, as... Figure 21 As shown, from the lower end of the nozzle device 100 ( Figure 5 The first gas is injected from the first gas injection port 72 toward the center WC of the substrate W.

[0175] At the start of the first gas injection, the nozzle device 100 is in the upper nozzle position HP. Therefore, a relatively large distance is ensured between the nozzle device 100 and the substrate W. Consequently, the impact generated when the first gas injected from the nozzle device 100 collides with the substrate W is sufficiently low compared to the case where the first gas is injected in the lower nozzle position. Therefore, as... Figure 21 As shown in the bubble frame with double dashed lines, at time t51, the displacement liquid L3 on the substrate W is almost unaffected by the first gas.

[0176] Next, at time t52, the rotational speed of the substrate W increases from the second speed to a third speed, which is higher than the second speed but lower than the first speed, and is maintained at the third speed. In this embodiment, the third speed is 300 rpm.

[0177] Furthermore, from time point t52 to time point t53, such as Figure 22 As shown, the height position of the nozzle device 100 decreases from the upper nozzle position HP to the lower nozzle position LP. The lower nozzle position LP is a height position that is lower than the upper nozzle position HP and higher than the substrate W. As a result, the impact of the first gas ejected from the nozzle device 100 when it collides with the substrate W gradually increases.

[0178] At this time, as Figure 22 As shown in the bubble frame with double-dotted lines, the first gas, injected in a direction orthogonal to the substrate W, is smoothly guided into the interior of multiple grooves forming a pattern on the substrate W. Thus, the cleaning solution L2 remaining inside the groove located at the center WC of the substrate W is completely removed by the replacement solution L3 at time t53.

[0179] However, in areas other than the center WC of the substrate W, because the first gas is not sprayed to the bottom of each tank, it is difficult to completely remove the displacement liquid L3 remaining inside the tank. Therefore, in this example, from time point t53 to time point t6, while the nozzle device 100 is maintained at the lower nozzle position LP, the nozzle device 100 moves horizontally from the center of the substrate to the outer periphery of the substrate. This movement is related to... Figure 12The operation of the nozzle device 100 begins in step S21. Therefore, the moving speed of the nozzle device 100 is adjusted according to its position on the moving path MP.

[0180] When the nozzle device 100 moves along the moving path MP, such as Figure 23 As shown, as the nozzle device 100 moves, the displacement fluid L3 in the tank directly below the nozzle device 100 is forcibly blown away by the first gas and removed. Then, as... Figure 24 As shown, at time t6, the nozzle device 100 reaches the outer peripheral end of the substrate, thereby completely removing the displacement liquid L3 from all the grooves on the substrate W, and the substrate W dries. The time from time t53 to time t6 is, for example, 10 seconds.

[0181] However, when the outer cup 30A and inner cup 30B are in the upper cup position, if the nozzle device 100, which is in the lower nozzle position LP, moves toward the outer peripheral end of the substrate W, the nozzle device 100 is more likely to interfere with the outer cup 30A and inner cup 30B. Therefore, in this example, at time t54, one moment before the nozzle device 100 reaches the outer peripheral end of the substrate, the height position of the outer cup 30A and inner cup 30B changes from the upper cup position to the lower cup position.

[0182] The action of supplying the first gas to the nozzle device 100 from time t53 to time t6, and the... Figure 12 The processing corresponds to steps S22 to S25. Therefore, the supply amount of the first gas to the nozzle device 100, that is, the flow rate of the first gas injected from the nozzle device 100 to the substrate W, is adjusted according to the position on the moving path MP.

[0183] For example, the flow rate of the first gas injected from the nozzle device 100 is maintained at 50 (l / min) during the period when the nozzle device 100 moves from the first position p1 to the second position p2. Furthermore, the flow rate of the first gas injected from the nozzle device 100 increases from 50 (l / min) to 100 (l / min) at a fixed rate during the period when the nozzle device 100 moves from the second position p2 to the third position p3.

[0184] As described above, the drying process ends at time t6. After the drying process is completed, the supply of the first gas, the second gas, and the third gas to the nozzle device 100 is stopped. Furthermore, the height position of the nozzle device 100 is adjusted to the nozzle upper position HP, and the nozzle device 100 returns to the standby position. Additionally, the rotation of the substrate W is stopped. In this state, the substrate W is removed from the chamber CH of the substrate processing apparatus 1.

[0185] 8. Effects of the implementation method

[0186] (a) According to the substrate processing apparatus 1, in the pre-processing step of drying the substrate W, the cleaning liquid L2 remaining on the substrate W is replaced with a replacement liquid L3. At this time, the amount of replacement liquid L3 supplied to each of the multiple portions (segmented regions R1, R2) of the substrate W is adjusted. In addition, the moving speed of the nozzle device 100 when moving in each of the multiple portions (segmented regions R1, R2) of the substrate W is adjusted. As a result, the cleaning liquid L2 remaining on the substrate W can be appropriately replaced with replacement liquid L3 according to the portion of the substrate W. Therefore, the cleaning liquid L2 on the substrate W can be appropriately removed. In addition, the consumption of replacement liquid L3 can be reduced. As a result, the consumption of replacement liquid L3 used in the processing of the substrate W after pattern formation can be suppressed, and the substrate W can be processed with high precision.

[0187] Specifically, such as Figure 8 As shown in the example, under the liquid flow conditions, it is envisioned that the flow rate of the replacement liquid L3 corresponding to the center WC and its periphery of the substrate W is set to be relatively low, while the flow rate of the replacement liquid L3 corresponding to the outer peripheral end and its periphery of the substrate W is set to be relatively high. Using this liquid flow condition, in the pre-drying process of the substrate W, it is possible to prevent the supply of excessive replacement liquid L3 to the center WC of the substrate W. Furthermore, a sufficient amount of replacement liquid L3 for removing the cleaning liquid L2 can be supplied to the outer peripheral end of the substrate W, thereby improving the replacement efficiency of the cleaning liquid L2.

[0188] In addition, such as Figure 8 As shown in the example, in the liquid movement conditions, it is envisioned that the movement speed corresponding to the center WC and its periphery of the substrate W is set to be relatively high, while the movement speed corresponding to the outer peripheral end and its periphery of the substrate W is set to be relatively low. Using this liquid movement condition, in the pre-drying process of the substrate W, it is possible to suppress the supply of excessive displacement liquid L3 to the center WC of the substrate W. Furthermore, a sufficient amount of displacement liquid L3 for removing cleaning liquid L2 can be supplied to the outer peripheral end of the substrate W, thereby improving the displacement efficiency of cleaning liquid L2.

[0189] (b) According to the substrate processing apparatus 1, in the post-drying process of the substrate W, the displacement liquid L3 remaining on the substrate W is removed by a first gas. At this time, the amount of the first gas supplied to each of the multiple portions (segmented regions R1, R2) of the substrate W is adjusted. Furthermore, the moving speed of the nozzle device 100 during the movement of each of the multiple portions (segmented regions R1, R2) of the substrate W is adjusted. Thus, the displacement liquid L3 remaining on the substrate W can be appropriately blown away with the first gas according to the portion of the substrate W. Therefore, the displacement liquid L3 on the substrate W can be appropriately removed. Furthermore, the consumption of the first gas can be reduced. As a result, the consumption of the first gas used in the processing of the substrate W after pattern formation can be suppressed, and the substrate W can be processed with high precision.

[0190] Specifically, such as Figure 9 As shown in the example, under the gas flow conditions, it is envisioned that the flow rate of the first gas corresponding to the center WC and its periphery of the substrate W is set to be relatively low, while the flow rate of the first gas corresponding to the outer peripheral end and its periphery of the substrate W is set to be relatively high. Using these gas flow conditions, in the subsequent process of drying the substrate W, it is possible to suppress the supply of excessive first gas to the center WC of the substrate W. Furthermore, a sufficient amount of first gas for removing the displacement liquid L3 can be supplied to the outer peripheral end of the substrate W, thereby improving the removal efficiency of the displacement liquid L3.

[0191] In addition, such as Figure 9 As shown in the example, in the gas movement conditions, it is envisioned that the movement speed corresponding to the center WC and its periphery of the substrate W is set to be relatively high, while the movement speed corresponding to the outer peripheral end and its periphery of the substrate W is set to be relatively low. Using this gas movement condition, in the subsequent process after the drying treatment of the substrate W, it is possible to suppress the supply of excessive first gas to the center WC of the substrate W. Furthermore, a sufficient amount of first gas for removing the displacement liquid L3 can be supplied to the outer peripheral end of the substrate W, thereby improving the removal efficiency of the displacement liquid L3.

[0192] (c) In the substrate processing apparatus 1, in the pre-drying process, the nozzle device 100 is positioned at the nozzle upper position HP, and the displacement liquid outlet 62 faces the center WC of the substrate W. In this state, displacement liquid L3 is ejected downward from the displacement liquid outlet 62 of the nozzle device 100. Furthermore, the nozzle device 100 moves horizontally from the center of the substrate to the outer peripheral end of the substrate. In this case, compared to the case where the nozzle device 100 is at the nozzle lower position LP, the nozzle device 100 remains at a height away from the substrate W. In particular, the nozzle upper position HP is higher than the upper ends of the outer cup 30A and inner cup 30B located at the cup upper position. Therefore, when the nozzle device 100 moves towards the outer peripheral end of the substrate, the nozzle device 100 does not interfere with the outer cup 30A and inner cup 30B.

[0193] Furthermore, as the nozzle device 100 moves horizontally from the center of the substrate to the outer periphery, the displacement liquid L3 covers a wider area of ​​the upper surface of the substrate W and is ejected in a direction orthogonal to the substrate W. At this time, the displacement liquid L3, ejected from the upper position HP of the nozzle, impacts the surface of the substrate W with higher energy compared to when ejected from the lower position LP of the nozzle. Therefore, the displacement liquid L3 more effectively displaces the cleaning liquid L2 remaining inside the tank on the substrate W, successfully removing the cleaning liquid L2 remaining inside the tank.

[0194] Next, in the post-drying process, the nozzle device 100 is positioned at the upper nozzle position HP, with the first gas injection port 72 facing the center WC of the substrate W. In this state, the first gas is injected downwards from the first gas injection port 72 of the nozzle device 100. While maintaining the injection of the first gas, the nozzle device 100 descends from the upper nozzle position HP to the lower nozzle position LP. At this time, the degree of impact generated when the first gas injected from the first gas injection port 72 collides with the substrate W gradually increases as the nozzle device 100 moves from the upper nozzle position HP to the lower nozzle position LP. Therefore, compared to the case where the first gas is injected when the nozzle device 100 is in the lower nozzle position LP, the change in impact of the displacement liquid L3 applied to the substrate W can be mitigated. Therefore, the scattering of the displacement liquid L3 caused by the first gas colliding with the substrate W can be reduced. Thus, the decrease in the cleanliness of the substrate W caused by the displacement liquid L3 scattering from the substrate W re-adhering to the substrate W can be suppressed.

[0195] Then, with the nozzle device 100 in the lower nozzle position LP and the first gas continuing to be sprayed, the nozzle device 100 moves horizontally from the center of the substrate to the outer periphery of the substrate. In this case, the first gas covers a wide area of ​​the upper surface of the substrate W and is sprayed in a direction orthogonal to the substrate W. As a result, the first gas more effectively displaces the displacement liquid L3 remaining inside the multiple grooves on the substrate W. Therefore, the displacement liquid L3 remaining inside each groove is successfully removed, and the substrate W dries. During the drying process, because the displacement liquid L3 has a lower surface tension than the cleaning liquid L2, the pattern formed on the substrate W is less susceptible to damage (pattern collapse, etc.) caused by the surface tension of the displacement liquid L3. As a result, the cleaning liquid L2 remaining on the substrate W after pattern formation can be properly removed from the substrate W.

[0196] (d) When the nozzle device 100 is located in the space above the substrate W, the second gas is injected from the second gas injection port 131. In this case, the second gas flow is formed at a position above the substrate W in a planar manner extending in a direction parallel to the upper surface of the substrate W. As a result, it is possible to suppress particles that are dispersed at a position above the second gas injection port 131 from falling onto the substrate W. Therefore, it is possible to suppress the decrease in the cleanliness of the dried substrate W.

[0197] (e) When the nozzle device 100 is located in the space above the substrate W, a second gas is injected from the second gas injection port 131, and a third gas is injected from the third gas injection port 132. The airflow of the third gas injected from the third gas injection port 132 blocks the flow of gas between the space above the third gas injection port 132 and the space below the third gas injection port 132. This further prevents contaminants such as particulate matter from falling onto the substrate W from the space above the third gas injection port 132.

[0198] Furthermore, with the nozzle device 100 in one orientation, the third gas injection port 132 is positioned above the second gas injection port 131. Therefore, when both the second and third gases are simultaneously injected from the nozzle device 100, the space below the third gas injection port 132 and above the substrate W can be filled with the second gas. Thus, the space surrounding the substrate W can be maintained as a clean and non-reactive environment, i.e., a chemically stable environment.

[0199] 9. A substrate processing system equipped with substrate processing apparatus 1

[0200] Figure 25 It means possessing Figure 1 A schematic top view of an example of a substrate processing system of substrate processing apparatus 1. (See attached image.) Figure 25 As shown, the substrate processing system 800 in this example includes a substrate loading / unloading section 801 and a substrate processing section 802.

[0201] The substrate loading / unloading section 801 is equipped with multiple (in this example, three) carrier placement stages 810, a transfer robot 821, and a control device 830. Each carrier placement stage 810 holds a container C that holds multiple substrates W. The transfer robot 821 includes multiple (e.g., four) arms configured to hold and transfer the substrates W. The control device 830 includes a CPU and memory or a microcomputer, controlling the various components within the substrate processing system 800.

[0202] A transfer robot 822 and multiple (four in this example) substrate processing units 1 are provided in the substrate processing section 802. Viewed from above, the four substrate processing units 1 are arranged to surround the transfer robot 822. These substrate processing units 1 are... Figure 1 The substrate processing apparatus 1. That is to say, in Figure 25 In the substrate processing system 800, Figure 1 The substrate processing apparatus 1 is provided as a processing unit constituting the substrate processing system 800. The transfer robot 822 includes multiple (e.g., 4) hands and is configured to hold and transfer the substrate W.

[0203] In the substrate processing system 800, a transfer robot 821 removes an unprocessed substrate W from any of a plurality of carriers C placed on a plurality of carrier placement stages 810 and hands it over to a transfer robot 822. The transfer robot 822 then transfers the substrate W to one of a plurality of substrate processing apparatuses 1. Thus, in one substrate processing apparatus 1, the aforementioned series of processes (chemical treatment, cleaning, and drying) are performed.

[0204] Furthermore, the transfer robot 822 removes the processed substrate W from one of the multiple substrate processing devices 1 and hands it over to the transfer robot 821. The transfer robot 821 receives the processed substrate W and houses it in an empty carrier C.

[0205] According to each substrate processing apparatus 1, the consumption of fluid resources (displacement liquid L3 and first gas) used in processing the substrate W after patterning can be suppressed, and the substrate W can be processed with high precision. Therefore, according to the substrate processing system 800, the cost required for processing the substrate W can be reduced, and the substrate processing can be performed with high efficiency and a high yield.

[0206] 10. Other implementation methods

[0207] (a) In the substrate processing apparatus 1 of the described embodiment, although two segmented regions R1 and R2 for identifying the multiple portions are defined on the upper surface of the substrate W, the present invention is not limited thereto. Three or more segmented regions arranged radially on the upper surface of the substrate W may also be defined. In this case, the lengths of the multiple segmented regions radially on the substrate W may be the same or different.

[0208] Furthermore, as described above, when three or more segmented regions are defined on the substrate W, the flow rate of the displacement liquid L3 to be supplied to each of the three or more segmented regions is specified in the liquid flow condition. Furthermore, in the liquid movement condition, the moving speed of the nozzle device 100 when moving in the space above each segmented region of the substrate W to supply the displacement liquid L3 to each of the three or more segmented regions is specified.

[0209] Furthermore, when three or more segmented regions are defined on the substrate W, the flow rate of the first gas to be supplied to each of the three or more segmented regions is specified in the gas flow conditions. Furthermore, in the gas movement conditions, the moving speed of the nozzle device 100 when moving in the space above each segmented region of the substrate W to supply the first gas to each of the three or more segmented regions is specified.

[0210] Furthermore, multiple segmented regions may not be defined on the upper surface of substrate W. In this case, the liquid flow rate conditions can also be... Figure 7 The flow rate conditions for multiple replacement fluids L3 are set in a manner that corresponds to multiple parts of the movement path MP. Furthermore, the gas flow rate conditions can also be set in a manner consistent with... Figure 7 The movement path MP corresponds to multiple parts, and multiple conditions for the flow rate of the first gas are set accordingly. Furthermore, each of the liquid movement condition and the gas movement condition can be configured to correspond to... Figure 7 The conditions for setting multiple moving speeds of the nozzle device 100 are determined by the method that the multiple parts of the moving path MP correspond to each other.

[0211] (b) In the substrate processing apparatus 1 of the described embodiment, the control unit 200 can also adjust the rotational speed of the substrate W when supplying the displacement liquid L3 or the first gas to each of the multiple portions (segmented regions R1, R2) of the substrate W by controlling the rotational drive unit 22. For example, the control unit 200 can also control the rotational drive unit 22 to rotate the substrate W at a first rotational speed when supplying the displacement liquid L3 or the first gas to the segmented region R1. Furthermore, when supplying the displacement liquid L3 or the first gas to the segmented region R2, the substrate W can also be rotated at a second rotational speed different from the first rotational speed. In these cases, each of the liquid processing conditions and gas processing conditions stored in the storage device 204 may include conditions representing the relationship between the multiple portions of the substrate W and the rotational speed of the substrate W.

[0212] (c) In the described embodiment, although it has been explained that the flow rates of the fluids corresponding to the center WC and its periphery of the substrate W are set to be lower, and the flow rates of the fluids corresponding to the outer peripheral end and its periphery of the substrate W are set to be higher, the present invention is not limited thereto. It is also possible, depending on the pattern formed on the substrate W, to set the flow rates of the fluids corresponding to the center WC and its periphery of the substrate W to be higher, and the flow rates of the fluids corresponding to the outer peripheral end and its periphery of the substrate W to be lower, in both liquid and gas flow conditions.

[0213] (d) In the described embodiment, although it has been explained that the moving speed corresponding to the center WC and its periphery of the substrate W is set higher and the moving speed corresponding to the outer peripheral end and its periphery of the substrate W is set lower in both liquid and gas moving conditions, the present invention is not limited thereto. Depending on the pattern formed on the substrate W, the moving speed corresponding to the center WC and its periphery of the substrate W may be set lower and the moving speed corresponding to the outer peripheral end and its periphery of the substrate W may be set higher in both liquid and gas moving conditions.

[0214] (e) In the substrate processing apparatus 1 of the embodiment, the displacement liquid supply system 60 may also be configured to supply displacement liquid L3 heated to a specified temperature to the nozzle device 100. Figure 26 This is a schematic side view of the substrate processing apparatus 1 in another embodiment. Regarding... Figure 26 The configuration and operation of the substrate processing apparatus 1, in relation to the embodiment described above. Figure 1 The differences in the structure and operation of the substrate processing apparatus 1 will be explained.

[0215] like Figure 26As shown, in the substrate processing apparatus 1 of this example, the displacement solution supply system 60 includes a displacement solution supply source 63 and a displacement solution temperature adjustment unit 64. The displacement solution supply source 63 is, for example, a tank for storing displacement solution L3, and supplies displacement solution L3 to the displacement solution temperature adjustment unit 64. The displacement solution temperature adjustment unit 64 includes, for example, piping and a heater, and heats the displacement solution L3 supplied from the displacement solution supply source 63 to a temperature higher than room temperature (e.g., 25°C). Specifically, the displacement solution temperature adjustment unit 64 adjusts the temperature of the displacement solution to, for example, about 60°C to 70°C by heating the displacement solution L3.

[0216] In this configuration, during the pre-drying process, a displacement solution at approximately 60°C to 70°C can be supplied from the displacement solution supply system 60 to the nozzle device 100. This displaces the cleaning solution L2 remaining on the cleaned substrate W with the displacement solution L3, which is at a temperature higher than room temperature. Furthermore, by supplying the substrate W with the displacement solution L3 at a temperature higher than room temperature, the temperature of the substrate W can be maintained above room temperature. Consequently, during the subsequent drying process, the displacement solution L3 on the substrate W evaporates easily, shortening the drying time required for the substrate W.

[0217] In addition, Figure 26 In the substrate processing apparatus 1, the control unit 200 can also adjust the temperature of the replacement liquid L3 supplied to each of the multiple portions (segmented regions R1, R2) of the substrate W by controlling the replacement liquid temperature adjustment unit 64. For example, the control unit 200 can also supply replacement liquid L3 at a first temperature to segmented region R1 and supply replacement liquid L3 at a second temperature different from the first temperature to segmented region R2 by controlling the replacement liquid temperature adjustment unit 64.

[0218] A specific example is given. In the substrate processing apparatus 1 of this example, the storage device 204 of the control unit 200 ( Figure 6 The control unit 200 also stores temperature adjustment conditions. Based on the temperature adjustment conditions stored in the control unit 200, the replacement fluid temperature adjustment unit 64 is controlled.

[0219] Here, the temperature adjustment condition specifies the temperature at which the displacement fluid L3 supplied to multiple portions (segmented regions R1, R2) of the substrate W should be adjusted when supplying displacement fluid L3 to the substrate W. More specifically, in this example, the temperature adjustment condition specifies the temperature at which the displacement fluid L3 supplied to the respective portions of the substrate W should be when the nozzle device 100 moves along the moving path MP, with the nozzle device 100 facing each other.

[0220] Figure 27 This is a diagram illustrating an example of temperature adjustment conditions. In Figure 27 The temperature adjustment conditions are illustrated in the diagram. Figure 27 In the chart, the vertical axis represents the temperature of the replacement fluid L3, and the horizontal axis represents... Figure 7 The position on the movement path MP.

[0221] according to Figure 27 The temperature adjustment conditions are specified such that the temperature of the displacement liquid L3 when the nozzle device 100 is positioned opposite the partition region R1 of the substrate W is fixed at a first temperature t01. On the other hand, the temperature of the displacement liquid L3 when the nozzle device 100 is positioned opposite the partition region R2 of the substrate W is fixed at a second temperature t02, which is higher than the first temperature t01.

[0222] In a rotating substrate W, the temperature at the periphery tends to drop more easily than the central portion. Therefore, when a displacement solution L3 at a predetermined temperature is supplied from the nozzle device 100 to the segmentation regions R1 and R2, the temperature of the displacement solution L3 in the segmentation region R2 tends to drop due to the temperature of the substrate W. The lower the temperature of the displacement solution L3, the lower its displacement efficiency in replacing the cleaning solution L2; conversely, the higher the temperature of the displacement solution L3, the higher its displacement efficiency.

[0223] Therefore, in Figure 27 In the temperature adjustment conditions, the temperature of the replacement fluid L3 supplied to the outer peripheral end and nearby portion of the substrate W is set to be higher than the temperature of the replacement fluid L3 supplied to the central portion of the upper surface of the substrate W. As a result, the replacement efficiency of the cleaning fluid L2 by the replacement fluid L3 is improved throughout the entire upper surface of the substrate W. Furthermore, in the temperature adjustment conditions of this example, the first temperature t01 is, for example, 65 (°C), and the second temperature t02 is, for example, 70 (°C).

[0224] Figure 28 This is a block diagram illustrating an example of the configuration of a functional unit used for control based on liquid handling conditions, gas handling conditions, and temperature adjustment conditions. (About...) Figure 28 An example of its composition, illustrating the relationship with Figure 10 The examples are different.

[0225] like Figure 28 As shown, the CPU 201 of the control unit 200 is a functional unit for performing control based on liquid handling conditions, gas handling conditions, and temperature adjustment conditions, in addition to Figure 10 In addition to its components, it also includes a temperature condition acquisition unit 217 and a liquid temperature control unit 218. These functional units are implemented by the CPU 201 of the control unit 200 executing the substrate cleaning program stored in the storage device 204. Furthermore, part or all of the temperature condition acquisition unit 217 and the liquid temperature control unit 218 can also be implemented by hardware such as electronic circuits.

[0226] The operation receiving unit 211 receives temperature adjustment conditions input from the operation unit 190. Furthermore, the operation receiving unit 211 stores the received temperature adjustment conditions in the storage device 204.

[0227] During the drying process of the substrate W, the temperature condition acquisition unit 217 acquires the temperature adjustment conditions stored in the storage device 204. Furthermore, the temperature condition acquisition unit 217 provides the acquired temperature adjustment conditions to the liquid temperature control unit 218.

[0228] The horizontal movement control unit 214 provides the liquid temperature control unit 218 with information indicating the position of the nozzle device 100 on the movement path MP. During the drying process of the substrate W, when the cleaning liquid L2 on the substrate W is replaced with the replacement liquid L3, the liquid temperature control unit 218 controls the liquid temperature based on temperature adjustment conditions and the information provided from the horizontal movement control unit 214. Figure 27 The displacement fluid temperature adjustment unit 64. Thereby, the displacement fluid L3 is supplied to the nozzle device 100 at a temperature according to the temperature adjustment conditions, based on the position of the nozzle device 100 relative to the substrate W.

[0229] Figure 29 It means Figure 28 A flowchart illustrating the processing flow of multiple functional units. Additionally... Figure 28 The processing flow of multiple functional departments, except for a portion, is related to... Figure 11 and Figure 12 The processing flow shown in the flowchart is the same. Therefore, in Figure 29 In Chinese, omission and Figure 11 and Figure 12 A diagram illustrating a common part of the processing described. Regarding... Figure 29 The flowchart illustrates the process. Figure 11 and Figure 12 The examples are different.

[0230] In this example, when the drying process of substrate W begins, the movement condition acquisition unit 212, the flow rate condition acquisition unit 213, and the temperature condition acquisition unit 217 acquire the liquid movement conditions, liquid flow rate conditions, and temperature adjustment conditions, respectively (step S10a). Next, the control unit 200 sequentially performs... Figure 11 The processing steps S11 to S15.

[0231] Next, the liquid temperature control unit 218 determines the temperature of the replacement fluid L3 that should be supplied to the nozzle device 100 at the current moment based on the temperature adjustment conditions and the position of the nozzle device 100 detected in the previous step S14 (step S15a).

[0232] Next, the displacement fluid flow control unit 215 and the liquid temperature control unit 218 control the displacement fluid supply system 60 to supply displacement fluid L3 to the nozzle device 100 at a determined flow rate and temperature (step S16a). Then, proceed with... Figure 11 and Figure 12 The processing steps S17 to S28 are completed, and the series of processing steps ends.

[0233] exist Figure 27 In the temperature adjustment conditions, the temperature of the replacement fluid L3 supplied to the segmented area R2 is set higher than the temperature of the replacement fluid L3 supplied to the segmented area R1. However, depending on the type of cleaning fluid L2 and replacement fluid L3, or the processing environment, the temperature of the replacement fluid L3 supplied to the segmented area R2 may also be set lower than the temperature of the replacement fluid L3 supplied to the segmented area R1.

[0234] exist Figure 26 In the substrate processing apparatus 1, the temperature adjustment unit 64 of the displacement liquid supply system 60 adjusts the temperature of the displacement liquid L3 supplied to the substrate W, but the temperature of the displacement liquid L3 supplied to the substrate W can also be adjusted indirectly through the substrate W.

[0235] Figure 30 This is a schematic side view of a substrate processing apparatus 1 according to another embodiment. Figure 30 The substrate processing apparatus 1 has a substrate temperature adjustment unit 65 to replace Figure 26 The displacement fluid temperature adjustment unit 64. The substrate temperature adjustment unit 65 is configured to adjust the temperature of the substrate W held by the substrate holding unit 21.

[0236] Specifically, the substrate temperature adjustment unit 65 may also be a back-side cleaning device that supplies a processing liquid (e.g., pure water) at a temperature higher than room temperature to the periphery of the lower surface of the substrate W held by the substrate holding unit 21. Alternatively, the substrate temperature adjustment unit 65 may be, for example, a heater disposed inside the rotating base 21a that heats at least a portion of the substrate W. Alternatively, the substrate temperature adjustment unit 65 may be a liquid supply device that supplies a processing liquid (e.g., pure water) at a temperature higher than room temperature to the center of the lower surface of the substrate W via the rotation shaft of the rotation drive unit 22.

[0237] In this case, the temperature adjustment conditions may include conditions for controlling the operation of the substrate temperature adjustment unit 65. Therefore, the liquid temperature control unit 218 of the control unit 200 can also control the substrate temperature adjustment unit 65 based on the temperature adjustment conditions and the position of the nozzle device 100 on the substrate W. For example, the liquid temperature control unit 218 may stop the operation of the substrate temperature adjustment unit 65 when the nozzle device 100 is in a position opposite to the dividing region R1, and activate the substrate temperature adjustment unit 65 when the nozzle device 100 is in a position opposite to the dividing region R2. Thus, for example, by raising the temperature of the substrate W only when the nozzle device 100 is in the dividing region R2, the temperature of the displacement liquid L3 supplied to the substrate W can be raised via the substrate W.

[0238] In addition, depending on the type of cleaning fluid L2 and replacement fluid L3, or the processing environment, the liquid temperature control unit 218 may activate the substrate temperature adjustment unit 65 when the nozzle device 100 is in a position opposite to the dividing area R1, and deactivate the substrate temperature adjustment unit 65 when the nozzle device 100 is in a position opposite to the dividing area R2.

[0239] (f) In the substrate processing apparatus 1 of the described embodiment, although a rotary chuck that holds the outer peripheral end of the substrate W is used as the substrate holding part 21, the present invention is not limited thereto. As the substrate holding part 21, an adsorption type rotary chuck that adsorbs and holds the central part of the lower surface of the substrate W can also be used.

[0240] (g) In the substrate processing apparatus 1 of the described embodiment, although the upper position of the outer cup 30A is the same as the upper position of the inner cup 30B, and the lower position of the outer cup 30A is the same as the lower position of the inner cup 30B, the present invention is not limited thereto. The upper position of the outer cup 30A and the upper position of the inner cup 30B may be different from each other. Furthermore, the lower position of the outer cup 30A and the lower position of the inner cup 30B may also be different from each other. In addition, the outer cup 30A and the inner cup 30B may be configured to not interfere with each other and be able to move up and down independently. In this case, the nozzle upper position HP of the nozzle device 100 is preferably set above the upper end of the outer cup 30A and the upper end of the inner cup 30B which are in the upper position.

[0241] (h) In the post-drying process of the embodiment described above, although in order to prevent interference between the nozzle device 100 and the outer cup 30A and the inner cup 30B, the outer cup 30A and the inner cup 30B are lowered from the upper cup position to the lower cup position during the horizontal movement of the nozzle device 100 which is in the lower nozzle position LP, the present invention is not limited thereto.

[0242] Because the nozzle device 100 is small enough, even if the first gas is injected from the nozzle device 100 to the outer peripheral end of the substrate W, the outer cup 30A and inner cup 30B, which are in the cup position, will not interfere with each other. The outer cup 30A and inner cup 30B can also be kept in the cup position during the drying process.

[0243] Furthermore, the range of horizontal movement of the nozzle device 100 can be limited as long as it can spray the first gas onto the entire patterning area on the substrate W by moving the nozzle device 100 horizontally within a range that does not interfere with the outer cup 30A and inner cup 30B located on the cup. Alternatively, the range of horizontal movement of the nozzle device 100 can be limited as long as it can sufficiently dry the entire substrate W by moving the nozzle device 100 horizontally within a range that does not interfere with the outer cup 30A and inner cup 30B located on the cup. Here, limiting the range of horizontal movement of the nozzle device 100 means moving the nozzle device 100 horizontally within a range from the center of the substrate to a position a fixed distance inward from the outer periphery of the substrate. In these cases, the outer cup 30A and inner cup 30B can be maintained in the cup position during the drying process.

[0244] (i) Although the nozzle device 100 of the described embodiment has two second gas injection ports 131 and a third gas injection port 132 formed on the outer peripheral surface 130, the present invention is not limited thereto. It is also possible that one of the second gas injection ports 131 and the third gas injection port 132 is not formed.

[0245] (j) In the substrate processing apparatus 1 of the described embodiment, the flow rates of the second and third gases ejected from the nozzle device 100 may also be adjusted when the first gas is supplied to each of the plurality of portions (divided regions R1, R2) of the substrate W. Specific examples of this substrate processing apparatus 1 will be described.

[0246] In the substrate processing apparatus 1 of this example, the storage device 204 of the control unit 200 ( Figure 6 The control unit 200 also stores gas emission conditions. Based on the gas emission conditions stored in the control unit 200, the second gas supply system 80 is controlled. Figure 1 ) and the third gas supply system 90 ( Figure 1 ).

[0247] Here, the gas emission conditions specify the injection flow rates of the second and third gases that should be ejected from the nozzle device 100 in various portions (segmented regions R1, R2) of the substrate W when the first gas is supplied to the substrate W. More specifically, in this example, the gas emission conditions specify the flow rates of the second and third gases that should be supplied to the nozzle device 100 when the nozzle device 100 moves along the moving path MP, with the nozzle device 100 facing each other towards the various portions of the substrate W.

[0248] Figure 31 This is a diagram illustrating an example of gaseous radiation conditions. In Figure 31 The diagram illustrates the gaseous radiation conditions. Figure 31 In the chart, the vertical axis represents the injection flow rates of the second and third gases ejected from the nozzle device 100, and the horizontal axis represents... Figure 7 The position on the movement path MP.

[0249] according to Figure 31 Under the gas emission conditions, the injection flow rates of the second and third gases when the nozzle device 100 is positioned opposite the partition region R1 of the substrate W are fixed at flow rate f21. On the other hand, the injection flow rates of the second and third gases when the nozzle device 100 is positioned opposite the partition region R2 of the substrate W are specified such that they increase at a fixed ratio as the nozzle device 100 moves from the second position p2 to the third position p3. Therefore, the injection flow rates of the second and third gases when the nozzle device 100 is in the third position p3 become a flow rate f22 that is greater than the injection flow rates (flow rate f21) of the second and third gases when the nozzle device 100 is in the second position p2. In the gas emission conditions of this example, the flow rate f21 is, for example, 72.5 (l / min), and the flow rate f22 is, for example, 150 (l / min).

[0250] When the substrate W is dried by spraying the first gas into the segmented region R2 containing the outer peripheral end of the substrate W, the displacement liquid L3 is more likely to disperse from the substrate W than when the substrate W is dried by spraying the first gas into the segmented region R1 located in the center of the substrate W.

[0251] Therefore, in Figure 31 In the gas emission conditions, the injection flow rates of the second and third gases when the nozzle device 100 is located on the segmented region R2 are set to be higher than the injection flow rates of the second and third gases when the nozzle device 100 is located on the segmented region R1. This suppresses the leakage of a large number of droplets from the substrate W to the outer peripheral end and its vicinity compared to the third gas injection port 132. Figure 3 The space above the third gas injection port 132 ( ). Furthermore, it can prevent the space above the third gas injection port 132 ( ). Figure 3Pollutants and other substances floating in the upper space fall onto the substrate W.

[0252] Figure 32 This is a block diagram illustrating an example of the configuration of a functional unit used for controlling liquid processing conditions, gas processing conditions, and gas emission conditions. (Regarding...) Figure 32 An example of its composition, illustrating the relationship with Figure 10 The examples are different.

[0253] like Figure 32 As shown, the CPU 201 of the control unit 200 serves as a functional unit for performing control based on liquid handling conditions, gas handling conditions, and gas emission conditions, in addition to Figure 10 In addition to its components, it also includes a radiation condition acquisition unit 219 and a second gas flow control unit 220. These functional units are implemented by the CPU 201 of the control unit 200 executing the substrate cleaning program stored in the storage device 204. Furthermore, part or all of the radiation condition acquisition unit 219 and the second gas flow control unit 220 can also be implemented by hardware such as electronic circuits.

[0254] The operation receiving unit 211 receives gas emission conditions input from the operation unit 190. Furthermore, the operation receiving unit 211 stores the received gas emission conditions in the storage device 204. The emission condition acquisition unit 219 acquires the gas emission conditions stored in the storage device 204 during the substrate W drying process. Furthermore, the emission condition acquisition unit 219 provides the acquired gas emission conditions to the second gas flow control unit 220.

[0255] The horizontal movement control unit 214 provides the second gas flow control unit 220 with information indicating the position of the nozzle device 100 on the movement path MP. When removing the displacement liquid L3 from the substrate W during the drying process, the second gas flow control unit 220 controls the second gas supply system 80 and the third gas supply system 90 based on the gas emission conditions and the information provided from the horizontal movement control unit 214. Thus, according to the position of the nozzle device 100 relative to the substrate W, the second gas and the third gas are radially ejected from the second gas injection port 131 and the third gas injection port 132 of the nozzle device 100 at flow rates according to the gas emission conditions.

[0256] Figure 33 It means Figure 32 A flowchart illustrating the processing flow of multiple functional units. Additionally... Figure 32 The processing flow of multiple functional departments, except for a portion, is related to... Figure 11 and Figure 12 The processing flow shown in the flowchart is the same. Therefore, in Figure 33 In Chinese, omission and Figure 11 and Figure 12A diagram illustrating a common part of the processing described. Regarding... Figure 33 The flowchart illustrates the process. Figure 11 and Figure 12 The examples are different.

[0257] In this example, when the drying process of substrate W begins, the following steps are performed: Figure 11 The processing steps S10 to S18 are then performed. Next, the movement condition acquisition unit 212, the flow rate condition acquisition unit 213, and the emission condition acquisition unit 219 acquire the liquid movement condition, the liquid flow rate condition, and the gas emission condition, respectively (step S19a). Following this, the control unit 200 sequentially performs... Figure 12 The processing steps S20 to S22.

[0258] Next, the first gas flow control unit 216 and the second gas flow control unit 220 determine the flow rates of the first gas, the second gas and the third gas that should be supplied to the nozzle device 100 at the current moment based on the gas flow conditions and gas emission conditions and the position of the nozzle device 100 detected in the previous step S22 (step S23a).

[0259] Next, the first gas flow control unit 216 and the second gas flow control unit 220 control the first gas supply system 70, the second gas supply system 80, and the third gas supply system 90 to supply the first gas, the second gas, and the third gas to the nozzle device 100 at determined flow rates (step S24a). Then, the following steps are performed. Figure 11 and Figure 12 The processing steps S25 to S28 are completed, and the series of processing steps ends.

[0260] Furthermore, when the second gas flow control unit 220 replaces the cleaning liquid on the substrate W with the replacement liquid during the drying process of the substrate W, it can also control the flow according to the gas emission conditions. Figure 1 The second gas supply system 80 and the third gas supply system 90.

[0261] also, Figure 31 The gas emission conditions are used interchangeably for both the second and third gas injection flow rates. However, the gas emission conditions corresponding to the second gas injection flow rate and the gas emission conditions corresponding to the third gas injection flow rate may be different.

[0262] 11. Correspondence between the constituent elements of the technical solution and the various parts of the implementation method

[0263] Hereinafter, examples of the correspondence between the constituent elements of the technical solution and the elements of the implementation method will be described, but the present invention is not limited to the following examples. Various other elements having the structure or function described in the technical solution can also be used as constituent elements of the technical solution.

[0264] In the described embodiment, the cleaning liquid L2 is an example of a residual liquid, the substrate processing apparatus 1 and the substrate processing system 800 are examples of substrate processing apparatuses, the substrate holding part 21 is an example of a substrate holding part, the rotary drive part 22 is an example of a rotary drive part, the displacement liquid outlet 62 is an example of a liquid ejection part, the nozzle device 100 is an example of a nozzle device, the displacement liquid L3 is an example of a processing liquid, and the displacement liquid supply system 60 and the first gas supply system 70 are examples of fluid supply systems.

[0265] Furthermore, the segmented regions R1 and R2 of the substrate W are examples of multiple parts of the substrate, the nozzle moving device 150 is an example of a moving drive unit, the control unit 200, the horizontal moving control unit 214, the displacement liquid flow control unit 215 and the first gas flow control unit 216 are examples of control units, the first gas injection port 72 is an example of a first gas injection unit, the upper nozzle position HP is an example of an upper position, the lower nozzle position LP is an example of a lower position, and the second gas injection port 131 is an example of a second gas injection unit.

[0266] 12. Summary of Implementation Methods

[0267] (Item 1) The substrate processing apparatus in Item 1 is

[0268] A device for removing residual liquid from a substrate after patterning; and comprising:

[0269] The rotation drive unit rotates the substrate holding unit that holds the substrate.

[0270] A nozzle device having a liquid ejection section;

[0271] A fluid supply system supplies a treatment fluid having a surface tension lower than that of the residual liquid to the nozzle device;

[0272] The moving drive unit maintains the nozzle device in one posture above the substrate held by the substrate holding unit, and moves it to multiple radially different portions of the substrate; and

[0273] The control unit controls the fluid supply system and the moving drive unit according to the liquid handling conditions; and

[0274] The liquid ejection section is formed such that, when the nozzle device is in the aforementioned posture, the processing liquid supplied from the fluid supply system is ejected downwards.

[0275] The liquid processing conditions include:

[0276] Liquid flow conditions specify the flow rate of the treatment liquid to be supplied to the nozzle device in each of the plurality of sections; and

[0277] Liquid movement conditions define the movement speed of the nozzle device when it moves through each of the plurality of portions of the substrate in order to supply the processing liquid to each of the plurality of portions of the substrate.

[0278] The amount of processing liquid supplied to each of the plurality of portions of the substrate is adjusted according to the substrate processing apparatus. Furthermore, the moving speed of the nozzle device during the movement of each of the plurality of portions of the substrate is adjusted. This allows for the appropriate replacement of residual liquid on the substrate with processing liquid according to the portion of the substrate. Therefore, residual liquid on the substrate can be appropriately removed. Furthermore, the consumption of processing liquid can be reduced. As a result, the consumption of fluid resources used in processing the substrate after patterning can be suppressed, and substrate processing can be performed with high precision.

[0279] (Item 2) can also be, according to the substrate processing apparatus of Item 1, wherein

[0280] The nozzle device further includes a first gas injection section; and

[0281] The fluid supply system is configured to supply a first gas to the nozzle device;

[0282] The first gas injection unit is formed such that, when the nozzle device is in the aforementioned posture, the first gas supplied from the fluid supply system is injected downwards.

[0283] The control unit

[0284] The fluid supply system and the movement drive unit are controlled such that the first gas is injected from the first gas injection section of the nozzle device onto the substrate while the processing liquid is present on the substrate held by the substrate holding section.

[0285] In this configuration, the first gas can be sprayed onto the substrate from the nozzle device. Thus, after the residual liquid on the substrate is replaced with the processing liquid, the processing liquid on the substrate can be blown away by spraying the first gas onto various parts of the substrate. This allows the substrate to be dried.

[0286] (Item 3) can also be, according to the substrate processing apparatus of Item 2, wherein

[0287] The control unit controls the fluid supply system and the moving drive unit according to the gas processing conditions; and

[0288] The gas processing conditions include:

[0289] Gas flow conditions specify the flow rate of the first gas to be supplied to the nozzle device in each of the plurality of parts; and

[0290] Gas movement conditions define the movement speed of the nozzle device when it moves through each of the plurality of portions of the substrate in order to supply the first gas to each of the plurality of portions of the substrate.

[0291] In this case, the amount of the first gas supplied to each of the multiple portions of the substrate is adjusted. Furthermore, the moving speed of the nozzle device during the movement of each of the multiple portions of the substrate is adjusted. Therefore, the processing liquid remaining on the substrate can be appropriately replaced with the first gas according to the portion of the substrate. Thus, the processing liquid on the substrate can be appropriately removed. Furthermore, the consumption of the first gas can be reduced. As a result, the consumption of fluid resources used in processing the substrate after patterning can be further suppressed, and substrate processing can be performed with higher precision.

[0292] (Item 4) can also be, according to the substrate processing apparatus of Item 3, wherein

[0293] The moving drive unit enables the nozzle device, which is in one posture, to move between an upper position (a specified distance above the substrate held by the substrate holding unit) and a lower position (above the upper position but above the substrate); and

[0294] The control unit

[0295] The rotation drive unit is controlled to rotate the substrate held by the substrate holding part in a manner that causes the substrate to rotate.

[0296] When the residual liquid is present on the substrate held by the substrate holding part, the fluid supply system and the movement drive unit are controlled according to the liquid processing conditions, as liquid replacement control.

[0297] After the liquid replacement control, while the processing liquid is present on the substrate, the first gas replacement control of the moving drive unit is performed with the nozzle device in the upper position and the first gas injection section facing the center of the substrate.

[0298] Following the first gas replacement control, a second gas replacement control is performed, in which the first gas is injected from the first gas injection unit and the nozzle device is lowered from the upper position to the lower position, thereby controlling the fluid supply system and the movement drive unit.

[0299] After the second gas replacement control, with the nozzle device in the lower position, a third gas replacement control is performed on the fluid supply system and the movement drive unit in such a way that the first gas is injected from the first gas injection unit and the nozzle device in the lower position moves from the center of the substrate toward the outer peripheral end of the substrate.

[0300] In this configuration, residual liquid on the substrate is replaced with a processing liquid through liquid displacement control. Then, through first gas displacement control, the nozzle device is positioned in the upper position, with the first gas injection section facing the center of the substrate. In this state, through second gas displacement control, gas is injected downwards from the first gas injection section of the nozzle device. Maintaining the downward injection of gas from the first gas injection section, the nozzle device descends from the upper position to the lower position. At this time, the degree of impact generated when the first gas injected from the first gas injection section collides with the substrate gradually increases as the nozzle device moves from the upper position to the lower position. Therefore, compared to the case where the first gas is injected when the nozzle device is in the lower position, the change in the impact of the processing liquid applied to the substrate can be mitigated. Therefore, the scattering of processing liquid caused by the first gas colliding with the substrate can be reduced. Thus, the decrease in substrate cleanliness caused by the re-adhesion of scattered processing liquid onto the substrate can be suppressed.

[0301] On the substrate after patterning, multiple grooves with depths perpendicular to the substrate are formed. According to this configuration, by controlling the third gas replacement, the first gas can be injected over a wider area of ​​the upper surface of the substrate in a direction perpendicular to the substrate. This allows the first gas to more effectively displace the processing liquid remaining inside the grooves on the substrate. Therefore, the processing liquid remaining inside the grooves is smoothly removed, and the substrate dries. During this drying process, because the processing liquid removed from the substrate has a lower surface tension than the residual liquid, the pattern formed on the substrate is less susceptible to damage caused by the surface tension of the processing liquid. As a result, residual liquid remaining on the substrate after patterning can be appropriately removed from the substrate.

[0302] (Item 5) can also be, according to Item 4, the substrate processing apparatus, wherein

[0303] The third gas replacement control includes the control unit controlling the fluid supply system and the moving drive unit according to the gas processing conditions.

[0304] In this configuration, the substrate can be properly dried during the third gas replacement control. Furthermore, the consumption of the first gas can be reduced. In other words, the consumption of fluid resources used in the processing of the substrate after patterning can be further suppressed, and the substrate can be processed with higher precision.

[0305] (Item 6) may also be the substrate processing apparatus according to Item 4 or Item 5, wherein

[0306] The nozzle device also includes a second gas injection section; and

[0307] The fluid supply system is configured to supply a second gas to the nozzle device;

[0308] The second gas injection section is configured such that, when the nozzle device is in the aforementioned posture and positioned in the space above the substrate held by the substrate holding section, the second gas supplied from the fluid supply system is radially injected toward the outer peripheral end of the substrate when viewed from above.

[0309] The control unit

[0310] During the second gas replacement control and the third gas replacement control, the fluid supply system is further controlled by injecting the second gas from the second gas injection unit.

[0311] In this configuration, during the second and third gas replacement controls, a second gas flow is formed above the substrate, extending in a planar manner parallel to the upper surface of the substrate. This suppresses the falling of particles dispersed above the second gas jet onto the substrate. Consequently, a decrease in the cleanliness of the dried substrate is prevented.

[0312] (Item 7) The substrate processing apparatus in Item 7 is

[0313] An apparatus for removing residual processing liquid from a substrate after patterning and drying the substrate; and comprising:

[0314] The rotation drive unit rotates the substrate holding unit that holds the substrate.

[0315] The nozzle device has a first gas injection section;

[0316] A fluid supply system supplies a first gas to the nozzle device;

[0317] The moving drive unit maintains the nozzle device in one posture above the substrate held by the substrate holding unit, and moves it to multiple radially different portions of the substrate; and

[0318] The control unit controls the fluid supply system and the moving drive unit according to the gas processing conditions; and

[0319] The first gas injection unit is formed such that, when the nozzle device is in the aforementioned posture, the first gas supplied from the fluid supply system is injected downwards.

[0320] The gas processing conditions include:

[0321] Gas flow conditions specify the flow rate of the first gas to be supplied to the nozzle device in each of the plurality of parts; and

[0322] Gas movement conditions define the movement speed of the nozzle device when it moves through each of the plurality of portions of the substrate in order to supply the first gas to each of the plurality of portions of the substrate.

[0323] According to the substrate processing apparatus, the amount of the first gas supplied to each of the plurality of portions of the substrate is adjusted. Furthermore, the moving speed of the nozzle device during the movement of each of the plurality of portions of the substrate is adjusted. Thus, the processing liquid remaining on the substrate can be appropriately blown away with the first gas according to the portion of the substrate. Therefore, the processing liquid on the substrate can be appropriately removed. Furthermore, the consumption of the first gas can be reduced. As a result, the consumption of fluid resources used in processing the substrate after patterning can be suppressed, and substrate processing can be performed with high precision.

[0324] (Item 8) can also be, according to Item 7, the substrate processing apparatus, wherein

[0325] The treatment solution is used to remove residual liquid on the substrate after patterning and has a surface tension lower than that of the residual liquid; and

[0326] The moving drive unit enables the nozzle device, which is in a certain posture, to move between an upper position that is a specified distance above the substrate held by the substrate holding unit, and a lower position that is both below the upper position and above the substrate.

[0327] The control unit

[0328] The rotation drive unit is controlled to rotate the substrate held by the substrate holding part in a manner that causes the substrate to rotate.

[0329] With the processing liquid replacing the residual liquid present on the substrate, the first gas replacement control of the moving drive unit is performed with the nozzle device in the upper position and the first gas injection section facing the center of the substrate.

[0330] Following the first gas replacement control, a second gas replacement control is performed, in which the first gas is injected from the first gas injection unit and the nozzle device is lowered from the upper position to the lower position, thereby controlling the fluid supply system and the movement drive unit.

[0331] After the second gas replacement control, with the nozzle device in the lower position, the fluid supply system and the moving drive unit are controlled according to the gas processing conditions, as the third gas replacement control.

[0332] In this configuration, the nozzle device is positioned in the upper position with the first gas displacement control facing the center of the substrate. In this state, gas is ejected downwards from the first gas displacement section of the nozzle device via the second gas displacement control. While maintaining the downward ejection of gas from the first gas displacement section, the nozzle device descends from the upper position to the lower position. At this time, the impact of the first gas ejected from the first gas displacement section when it collides with the substrate gradually increases as the nozzle device moves from the upper to the lower position. Therefore, compared to the case where the first gas is ejected when the nozzle device is in the lower position, the change in the impact of the processing liquid applied to the substrate can be mitigated. Thus, the scattering of processing liquid caused by the first gas colliding with the substrate can be reduced. Consequently, the decrease in substrate cleanliness caused by the re-adhesion of scattered processing liquid from the substrate can be suppressed.

[0333] On the substrate after patterning, multiple grooves with depths perpendicular to the substrate are formed. According to this configuration, by controlling the third gas replacement, the first gas can cover a wider area of ​​the upper surface of the substrate and be sprayed in a direction perpendicular to the substrate. Thus, the first gas more effectively displaces the processing liquid remaining inside the grooves on the substrate. Therefore, the processing liquid remaining inside the grooves is smoothly removed, and the substrate dries. During this drying process, because the processing liquid removed from the substrate has a lower surface tension than the residual liquid, the pattern formed on the substrate is less susceptible to damage caused by the surface tension of the processing liquid. As a result, residual liquid remaining on the substrate after patterning can be appropriately removed from the substrate.

[0334] (Item 9) may also be, according to Item 8, the substrate processing apparatus, wherein

[0335] The nozzle device also has a liquid ejection section; and

[0336] The fluid supply system is configured to supply the treatment fluid to the nozzle device;

[0337] The liquid ejection section is formed such that, when the nozzle device is in the aforementioned posture, the processing liquid supplied from the fluid supply system is ejected downwards.

[0338] The control unit

[0339] With the residual liquid present on the substrate held by the substrate holding part, the fluid supply system and the liquid replacement control of the moving drive unit are controlled to spray the processing liquid onto the substrate from the liquid ejection part of the nozzle device.

[0340] After the liquid replacement control, the first gas replacement control is performed.

[0341] In this configuration, a processing liquid can be sprayed onto the substrate from the nozzle device. This allows the processing liquid to replace any residual liquid on the substrate. Then, by spraying a first gas onto various parts of the substrate, the processing liquid on the substrate can be blown away. This allows the substrate to be dried.

[0342] (Item 10) may also be, according to Item 9, the substrate processing apparatus, wherein

[0343] The control unit performs liquid replacement control by controlling the fluid supply system and the moving drive unit according to the liquid processing conditions; and

[0344] The liquid processing conditions include:

[0345] Liquid flow conditions specify the flow rate of the treatment liquid to be supplied to the nozzle device in each of the plurality of sections; and

[0346] Liquid movement conditions define the movement speed of the nozzle device when it moves through each of the plurality of portions of the substrate in order to supply the processing liquid to each of the plurality of portions of the substrate.

[0347] In this case, the amount of processing liquid supplied to each of the multiple portions of the substrate is adjusted. Furthermore, the moving speed of the nozzle device is adjusted as each of the multiple portions of the substrate moves. Therefore, residual liquid remaining on the substrate can be appropriately replaced with processing liquid according to the portion of the substrate. Thus, residual liquid on the substrate can be appropriately removed. Furthermore, the consumption of processing liquid can be reduced. As a result, the consumption of fluid resources used in processing the substrate after patterning can be further suppressed, and substrate processing can be performed with higher precision.

[0348] (Item 11) may also be a substrate processing apparatus according to any one of items 8 to 10, wherein

[0349] The nozzle device also includes a second gas injection section; and

[0350] The fluid supply system is configured to supply a second gas to the nozzle device;

[0351] The second gas injection section is configured such that, when the nozzle device is in the aforementioned posture and positioned in the space above the substrate held by the substrate holding section, the second gas supplied from the fluid supply system is radially injected toward the outer peripheral end of the substrate when viewed from above.

[0352] The control unit

[0353] During the second gas replacement control and the third gas replacement control, the fluid supply system is further controlled by injecting the second gas from the second gas injection unit.

[0354] In this configuration, during the second and third gas replacement controls, a second gas flow is formed above the substrate, extending in a planar manner parallel to the upper surface of the substrate. This suppresses the falling of particles dispersed above the second gas jet onto the substrate. Consequently, a decrease in the cleanliness of the dried substrate is prevented.

[0355] (Item 12) The substrate processing method in Item 12 is

[0356] A method for removing residual liquid from a substrate after patterning using a nozzle device; and

[0357] The nozzle device has a liquid ejection section;

[0358] The liquid ejection section is formed such that, when the nozzle device is in one position, the processing liquid supplied to the nozzle device is ejected downwards;

[0359] The treatment fluid has a lower surface tension than the residual fluid; and

[0360] The substrate processing method includes the following steps:

[0361] The substrate is held and rotated by a substrate holding portion; and

[0362] According to the liquid processing conditions, the nozzle device in the aforementioned posture is maintained above the substrate held by the substrate holding portion, and moved to multiple radially different portions of the substrate, and the processing liquid is supplied to the multiple portions of the substrate;

[0363] The liquid processing conditions include:

[0364] Liquid flow conditions specify the flow rate of the treatment fluid to be supplied to the nozzle device in each of the plurality of sections; and

[0365] Liquid movement conditions define the movement speed of the nozzle device when moving through each of the plurality of portions of the substrate in order to supply processing liquid to each of the plurality of portions of the substrate.

[0366] According to the substrate processing method, the amount of processing liquid supplied to each of the plurality of portions of the substrate is adjusted. Furthermore, the moving speed of the nozzle device during the movement of each of the plurality of portions of the substrate is adjusted. Therefore, residual liquid remaining on the substrate can be appropriately replaced with processing liquid according to the portion of the substrate. Thus, residual liquid on the substrate can be appropriately removed. Furthermore, the consumption of processing liquid can be reduced. As a result, the consumption of fluid resources used in processing the substrate after patterning can be suppressed, and substrate processing can be performed with higher precision.

[0367] (Item 13) The substrate processing method in Item 13 is

[0368] It is a substrate processing method that uses a nozzle device to remove the processing liquid remaining on the substrate after patterning and thus dry the substrate.

[0369] The nozzle device has a gas injection section;

[0370] The gas injection section is formed such that, when the nozzle device is in a certain position, the first gas supplied to the nozzle device is injected downwards; and

[0371] The substrate processing method includes the following steps:

[0372] The substrate is held and rotated by a substrate holding portion; and

[0373] According to the gas processing conditions, the nozzle device in the aforementioned posture is maintained above the substrate held by the substrate holding portion, and moved to multiple radially different portions of the substrate, and the first gas is supplied to the multiple portions of the substrate;

[0374] The gas processing conditions include:

[0375] Gas flow conditions specify the flow rate of the first gas to be supplied to the nozzle device in each of the plurality of parts; and

[0376] Gas movement conditions define the movement speed of the nozzle device when it moves through each of the plurality of portions of the substrate in order to supply the first gas to each of the plurality of portions of the substrate.

[0377] According to the substrate processing apparatus, the amount of the first gas supplied to each of the plurality of portions of the substrate is adjusted. Furthermore, the moving speed of the nozzle device during the movement of each of the plurality of portions of the substrate is adjusted. Thus, the processing liquid remaining on the substrate can be appropriately blown away with the first gas according to the portion of the substrate. Therefore, the processing liquid on the substrate can be appropriately removed. Furthermore, the consumption of the first gas can be reduced. As a result, the consumption of fluid resources used in processing the substrate after patterning can be suppressed, and substrate processing can be performed with high precision.

[0378] (Item 14) may also be a substrate processing apparatus according to any one of items 1 to 6, wherein

[0379] The substrate processing apparatus further comprises:

[0380] The temperature adjustment unit adjusts the temperature of the processing liquid sprayed from the nozzle device onto the substrate held by the substrate holding unit, or the processing liquid on the substrate; and

[0381] The control unit controls the temperature adjustment unit according to the temperature adjustment conditions that the processing liquid supplied to each of the plurality of parts should be adjusted.

[0382] In this case, the temperature of the processing liquid supplied to multiple portions of the substrate is adjusted. Therefore, it is possible to supply each of the multiple portions of the substrate with a processing liquid adjusted to an appropriate temperature. As a result, the processing efficiency of the substrate is improved.

[0383] (Item 15) may also be, according to Item 6, the substrate processing apparatus, wherein

[0384] The control unit further controls the fluid supply system in accordance with the gas emission conditions of the second gas that should be supplied to the nozzle device in each of the plurality of parts.

[0385] In this configuration, the flow rate of the second gas, radially ejected from the nozzle device, is adjusted when the nozzle device is located at each of the multiple portions of the substrate. That is, the degree of effect obtained by ejecting the second gas is appropriately adjusted according to the position of the nozzle device on the substrate. Therefore, waste of the second gas can be suppressed, and a decrease in the cleanliness of the dried substrate can be prevented.

[0386] (Item 16) may also be the substrate processing apparatus according to Item 9 or Item 10, wherein

[0387] The substrate processing apparatus further comprises:

[0388] The temperature adjustment unit adjusts the temperature of the processing liquid sprayed from the nozzle device onto the substrate held by the substrate holding unit, or the processing liquid on the substrate; and

[0389] The control unit controls the temperature adjustment unit according to the temperature adjustment conditions that the processing liquid supplied to each of the plurality of parts should be adjusted.

[0390] In this case, the temperature of the processing liquid supplied to multiple portions of the substrate is adjusted. Therefore, it is possible to supply each of the multiple portions of the substrate with a processing liquid adjusted to an appropriate temperature. As a result, the processing efficiency of the substrate is improved.

[0391] (Item 17) may also be the substrate processing apparatus according to Item 11, wherein

[0392] The control unit further controls the fluid supply system in accordance with the gas emission conditions of the second gas that should be supplied to the nozzle device in each of the plurality of parts.

[0393] In this configuration, the flow rate of the second gas, radially ejected from the nozzle device, is adjusted when the nozzle device is located at each of the multiple portions of the substrate. That is, the degree of effect obtained by ejecting the second gas is appropriately adjusted according to the position of the nozzle device on the substrate. Therefore, waste of the second gas can be suppressed, and a decrease in the cleanliness of the dried substrate can be prevented.

Claims

1. A substrate processing apparatus for removing residual liquid remaining on a patterned substrate from the substrate; and comprising: The rotation drive unit rotates the substrate holding unit that holds the substrate. A nozzle device having a liquid ejection section; A fluid supply system supplies a treatment fluid having a surface tension lower than that of the residual liquid to the nozzle device; The moving drive unit maintains the nozzle device in one posture above the substrate held by the substrate holding unit, and moves it to multiple radially different portions of the substrate when viewed from above; and The control unit controls the fluid supply system and the moving drive unit according to the liquid handling conditions; and The liquid ejection section is formed such that, when the nozzle device is in the aforementioned posture, the processing liquid supplied from the fluid supply system is ejected downwards. The liquid processing conditions include: Liquid flow conditions specify the flow rate of the treatment liquid to be supplied to the nozzle device in each of the plurality of sections; and Liquid movement conditions define the movement speed of the nozzle device when moving through each of the plurality of portions of the substrate in order to supply the processing liquid to each of the plurality of portions of the substrate.

2. The substrate processing apparatus according to claim 1, wherein the nozzle device further comprises a first gas injection section; and The fluid supply system is configured to supply a first gas to the nozzle device; The first gas injection unit is formed such that, when the nozzle device is in the aforementioned posture, the first gas supplied from the fluid supply system is injected downwards. The control unit The fluid supply system and the movement drive unit are controlled such that the first gas is injected from the first gas injection section of the nozzle device onto the substrate while the processing liquid is present on the substrate held by the substrate holding section.

3. The substrate processing apparatus according to claim 2, wherein the control unit controls the fluid supply system and the movement drive unit according to gas processing conditions; and The gas processing conditions include: Gas flow conditions specify the flow rate of the first gas to be supplied to the nozzle device in each of the plurality of parts; and Gas movement conditions define the movement speed of the nozzle device when it moves through each of the plurality of portions of the substrate in order to supply the first gas to each of the plurality of portions of the substrate.

4. The substrate processing apparatus according to claim 3, wherein the moving drive unit enables the nozzle device, which is in a certain posture, to move between an upper position that is a specified distance above the substrate held by the substrate holding unit, and a lower position that is lower than the upper position and higher than the substrate; and The control unit The rotation drive unit is controlled to rotate the substrate held by the substrate holding part. When the residual liquid is present on the substrate held by the substrate holding part, the fluid supply system and the movement drive unit are controlled according to the liquid processing conditions, as liquid replacement control. After the liquid replacement control, while the processing liquid is present on the substrate, the first gas replacement control of the moving drive unit is performed with the nozzle device in the upper position and the first gas injection section facing the center of the substrate. Following the first gas replacement control, a second gas replacement control is performed, in which the first gas is injected from the first gas injection unit and the nozzle device is lowered from the upper position to the lower position, thereby controlling the fluid supply system and the movement drive unit. After the second gas replacement control, with the nozzle device in the lower position, a third gas replacement control is performed on the fluid supply system and the movement drive unit in such a way that the first gas is injected from the first gas injection unit and the nozzle device in the lower position moves from the center of the substrate toward the outer peripheral end of the substrate.

5. The substrate processing apparatus according to claim 4, wherein the third gas displacement control includes the control unit controlling the fluid supply system and the movement drive unit according to the gas processing conditions.

6. The substrate processing apparatus according to claim 4 or 5, wherein the nozzle device further comprises a second gas injection section; and The fluid supply system is configured to supply a second gas to the nozzle device; The second gas injection section is configured such that, when the nozzle device is in the aforementioned posture and positioned in the space above the substrate held by the substrate holding section, the second gas supplied from the fluid supply system is radially injected toward the outer peripheral end of the substrate when viewed from above. The control unit During the second gas replacement control and the third gas replacement control, the fluid supply system is further controlled by injecting the second gas from the second gas injection unit.

7. A substrate processing apparatus for drying a substrate by removing processing liquid remaining on the substrate after patterning; and comprising: The rotation drive unit rotates the substrate holding unit that holds the substrate. The nozzle device has a first gas injection section; A fluid supply system supplies a first gas to the nozzle device; The moving drive unit maintains the nozzle device in one posture above the substrate held by the substrate holding unit, and moves it to multiple radially different portions of the substrate when viewed from above; and The control unit controls the fluid supply system and the moving drive unit according to the gas processing conditions; and The first gas injection unit is formed such that, when the nozzle device is in the aforementioned posture, the first gas supplied from the fluid supply system is injected downwards. The gas processing conditions include: Gas flow conditions specify the flow rate of the first gas to be supplied to the nozzle device in each of the plurality of parts; and Gas movement conditions define the movement speed of the nozzle device when it moves through each of the plurality of portions of the substrate in order to supply the first gas to each of the plurality of portions of the substrate.

8. The substrate processing apparatus according to claim 7, wherein the processing liquid is used to remove residual liquid remaining on the substrate after patterning and has a surface tension lower than that of the residual liquid; and The moving drive unit enables the nozzle device, which is in a certain posture, to move between an upper position that is a specified distance above the substrate held by the substrate holding unit, and a lower position that is both below the upper position and above the substrate. The control unit The rotation drive unit is controlled to rotate the substrate held by the substrate holding part in a manner that causes the substrate to rotate. With the processing liquid replacing the residual liquid present on the substrate, the first gas replacement control of the moving drive unit is performed with the nozzle device in the upper position and the first gas injection section facing the center of the substrate. Following the first gas replacement control, a second gas replacement control is performed, in which the first gas is injected from the first gas injection unit and the nozzle device is lowered from the upper position to the lower position, thereby controlling the fluid supply system and the movement drive unit. After the second gas replacement control, with the nozzle device in the lower position, the fluid supply system and the moving drive unit are controlled according to the gas processing conditions, as the third gas replacement control.

9. The substrate processing apparatus according to claim 8, wherein the nozzle device further comprises a liquid ejection section; and The fluid supply system is configured to supply the treatment fluid to the nozzle device; The liquid ejection section is formed such that, when the nozzle device is in the aforementioned posture, the processing liquid supplied from the fluid supply system is ejected downwards. The control unit With the residual liquid present on the substrate held by the substrate holding part, the fluid supply system and the liquid replacement control of the moving drive unit are controlled to spray the processing liquid onto the substrate from the liquid ejection part of the nozzle device. After the liquid replacement control, the first gas replacement control is performed.

10. The substrate processing apparatus according to claim 9, wherein the control unit performs the liquid replacement control by controlling the fluid supply system and the movement drive unit according to liquid processing conditions; and The liquid processing conditions include: Liquid flow conditions specify the flow rate of the treatment liquid to be supplied to the nozzle device in each of the plurality of sections; and Liquid movement conditions define the movement speed of the nozzle device when it moves through each of the plurality of portions of the substrate in order to supply the processing liquid to each of the plurality of portions of the substrate.

11. The substrate processing apparatus according to any one of claims 8 to 10, wherein the nozzle apparatus further comprises a second gas injection section; and The fluid supply system is configured to supply a second gas to the nozzle device; The second gas injection section is configured such that, when the nozzle device is in the aforementioned posture and positioned in the space above the substrate held by the substrate holding section, the second gas supplied from the fluid supply system is radially injected toward the outer peripheral end of the substrate when viewed from above. The control unit During the second gas replacement control and the third gas replacement control, the fluid supply system is further controlled by injecting the second gas from the second gas injection unit.

12. A substrate processing method comprising using a nozzle device to remove residual liquid remaining on a patterned substrate from the substrate; and The nozzle device has a liquid ejection section; The liquid ejection section is formed such that, when the nozzle device is in one position, the processing liquid supplied to the nozzle device is ejected downwards; The treatment fluid has a lower surface tension than the residual fluid; and The substrate processing method includes the following steps: The substrate is held and rotated by a substrate holding portion; and According to the liquid processing conditions, the nozzle device in the aforementioned posture is maintained above the substrate held by the substrate holding portion, and moved to multiple radially different portions of the substrate when viewed from above, and the processing liquid is supplied to the multiple portions of the substrate; The liquid processing conditions include: Liquid flow conditions specify the flow rate of the treatment liquid to be supplied to the nozzle device in each of the plurality of sections; and Liquid movement conditions define the movement speed of the nozzle device when it moves through each of the plurality of portions in order to supply processing liquid to each of the plurality of portions of the substrate.

13. A substrate processing method, which uses a nozzle device to remove processing liquid remaining on a patterned substrate to dry the substrate; The nozzle device has a gas injection section; The gas injection section is formed such that, when the nozzle device is in a certain position, the first gas supplied to the nozzle device is injected downwards; and The substrate processing method includes the following steps: The substrate is held and rotated by a substrate holding portion; and According to the gas processing conditions, the nozzle device in the aforementioned posture is maintained above the substrate held by the substrate holding portion, and is moved to multiple radially different portions of the substrate when viewed from above, and the first gas is supplied to the multiple portions of the substrate; The gas processing conditions include: Gas flow conditions specify the flow rate of the first gas to be supplied to the nozzle device in each of the plurality of parts; and The gas movement conditions define the movement speed of the nozzle device when it moves through each of the plurality of portions in order to supply the first gas to each of the plurality of portions of the substrate.

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