High-side intelligent electronic switch, integrated circuit chip, chip product and automobile

Abstract

The utility model provides a high-side intelligent electronic switch, an integrated circuit chip, a chip product and an automobile, the high-side intelligent electronic switch comprises an N-type switch tube and a P-type switch tube, a control circuit comprises a logic control unit, a first driving unit and a second driving unit, the first driving unit comprises a boost module and a first driving module, and the second driving unit comprises a second driving module and a third driving module. The second driving unit comprises a second driving module, in the normal working mode, the boosting module works, the output voltage of the boosting module is larger than the voltage of the power supply end, and the logic control unit controls the N-type switching tube to be turned on and turned off through the first driving unit; and in the bypass mode, the boost module stops working, and the logic control unit controls the P-type switching tube to be turned on and turned off through the second driving unit. According to the scheme, when the high-side intelligent electronic switch provides small current, the P-type switching tube is driven to be turned on and turned on, a boosting module does not need to work, and self power consumption of the intelligent electronic switch is reduced on the premise that normal work of a load is guaranteed.

Description

Technical Field

[0001] The present application relates to the technical field of intelligent semiconductor switches, and in particular to a high-side intelligent electronic switch, an integrated circuit chip, a chip product, and an automobile. Background Art

[0002] In the field of automotive electronics, to ensure driving safety, the power switch in the intelligent electronic switch is usually connected as a high-side switch so that the load can be quickly stopped when a short circuit occurs in the vehicle's load to ensure the vehicle's driving safety.

[0003] In the prior art, power switches are typically implemented using N-type switching tubes due to their low cost and strong driving capability. When the N-type switching tube is connected as a high-side switch and turned on, its source voltage is approximately equal to the voltage at the power supply end. At this time, the driving unit used to drive the N-type switching tube to turn on needs to use a boost circuit to increase the voltage output to the gate of the N-type switching tube to control the N-type switching tube to turn on.

[0004] However, in practical applications, high-side applications for driving N-type switch tubes require a boost circuit to operate normally, which results in a high self-power consumption problem of the intelligent electronic switch when the load connected to it is small. Summary of the Invention

[0005] The present application provides a high-side intelligent electronic switch, an integrated circuit chip, a chip product, and an automobile to solve the problem of high self-power consumption of the intelligent electronic switch when the load connected to it is small.

[0006] In a first aspect, the present application provides a high-side intelligent electronic switch, comprising a power supply terminal, a power ground terminal, a load output terminal, a control circuit, a main power switch, and a bypass switch;

[0007] The main power switch is an N-type switch tube, the bypass switch is a P-type switch tube, the control circuit includes a logic control unit, a first drive unit and a second drive unit, the first drive unit includes a boost module and a first drive module, the boost module is connected to the power supply end of the first drive module, and the second drive unit includes a second drive module;

[0008] The power supply terminal and the power ground terminal are used to be connected to a battery, the load output terminal is used to be connected to a load, the drain and source of the N-type switch tube, and the source and drain of the P-type switch tube are correspondingly connected to the power supply terminal and the load output terminal, the control terminal of the N-type switch tube is connected to the first drive module, and the control terminal of the P-type switch tube is connected to the second drive module, and the first drive module and the second drive module are both connected to the logic control unit;

[0009] In normal working mode, the boost module works, the output voltage of the boost module is greater than the voltage of the power supply end, and the logic control unit controls the N-type switch tube to turn on and conduct via the first drive module and controls the P-type switch tube to turn off and cut off via the second drive module; in bypass mode, the boost module stops working, the logic control unit controls the P-type switch tube to turn on and conduct via the second drive module and controls the N-type switch tube to turn off and cut off via the first drive module, and in normal mode, the absolute value of the gate-source voltage of the N-type switch tube is greater than the absolute value of the gate-source voltage of the P-type switch tube in the bypass mode.

[0010] Optionally, the area occupied by the P-type switch tube is less than half the area occupied by the N-type switch tube.

[0011] Optionally, the maximum current value flowing through the P-type switch tube in the bypass mode is smaller than the maximum current value flowing through the N-type switch tube in the normal operating mode.

[0012] Optionally, the second driving unit is a current limiting driving unit, which is connected to the logic control unit and the P-type switch tube. In the bypass mode, the logic control unit controls the P-type switch tube to turn on and conduct via the current limiting driving unit, and the current flowing through the P-type switch tube is less than or equal to the first current limiting value set by the current limiting driving unit.

[0013] As an example, the current limiting driving unit includes a P-type transistor and a constant current source;

[0014] Wherein, one end of the constant current source is connected to the power ground terminal or the load output terminal, the other end of the constant current source is connected to the drain of the P-type transistor, the source of the P-type transistor and the source of the P-type switch tube are both connected to the power supply terminal, the drain of the P-type transistor is connected to its control terminal and the control terminal of the P-type switch tube, the drain of the P-type switch tube is connected to the load output terminal, and the control terminal of the current limiting drive unit is connected to the logic control unit;

[0015] In bypass mode, the logic control unit controls the operation of the current limiting drive unit, and the first current limiting value set by the current limiting drive unit is related to the current value provided by the constant current source and the current mirror ratio of the P-type transistor and the P-type switch tube.

[0016] Optionally, the P-type switching tube includes a P-type MOS tube, and the ratio of the first current limiting value to the current value provided by the constant current source is equal to the ratio of the width-to-length ratio of the P-type switching tube to the width-to-length ratio of the P-type transistor.

[0017] As another example, the current limiting driving unit includes a second driving module, a P-type sampling tube, a first resistor, a current limiting switch tube and a current limiting operational amplifier unit;

[0018] The source of the P-type sampling tube is connected to the source of the P-type switching tube, the drain of the P-type sampling tube is connected to the drain of the P-type switching tube via a first resistor, the control end of the P-type sampling tube and the control end of the P-type switching tube are both connected to the output end of the second driving module, the output end of the second driving module is also connected to the first end of the current limiting switching tube, the second end of the current limiting switching tube is connected to the source of the P-type switching tube, the control end of the current limiting switching tube is connected to the output end of the current limiting operational amplifier unit, the first input end of the current limiting operational amplifier unit is connected to the connection point between the P-type sampling tube and the first resistor, and the first input end of the current limiting operational amplifier unit is used to access a reference voltage;

[0019] In the bypass mode, the logic control unit controls the branch where the P-type sampling tube and the first resistor are located to be turned on and the current limiting operational amplifier unit to work, so that the current limiting driving unit works. The first current limiting value set by the current limiting driving unit is related to the maximum output voltage of the second driving module and the size of the reference voltage.

[0020] Optionally, in normal operating mode, the N-type switch tube is turned on and operates in a linear resistance region; in bypass mode, the P-type switch tube is turned on and operates in a saturation region.

[0021] In a second aspect, an embodiment of the present application provides an integrated circuit chip, comprising a high-side intelligent electronic switch as described in the first aspect, wherein the power supply end is a power supply pin, the power ground end is a power ground pin, and the load output end is a load output pin.

[0022] In a third aspect, an embodiment of the present application provides a chip product, comprising the high-side intelligent electronic switch according to the first aspect, wherein components of the high-side intelligent electronic switch other than a main power switch are located on a first integrated circuit chip, and the main power switch is located on a second integrated circuit chip;

[0023] Among them, the power supply end is a power supply pin, the power ground end is a power ground pin, and the load output end is a load output pin. The power supply pin and the power ground pin are located on a first integrated circuit chip, and the load output pin is located on a second integrated circuit chip.

[0024] In a fourth aspect, embodiments of the present application provide a chip product, comprising the high-side intelligent electronic switch according to the first aspect, wherein components of the high-side intelligent electronic switch other than a main power switch and a bypass switch are located on a first integrated circuit chip, and the main power switch and the bypass switch are located on a second integrated circuit chip;

[0025] Among them, the power supply end is a power supply pin, the power ground end is a power ground pin, and the load output end is a load output pin. The power supply pin and the power ground pin are located on a first integrated circuit chip, and the load output pin is located on a second integrated circuit chip.

[0026] In a fifth aspect, an embodiment of the present application provides an automobile, comprising the high-side intelligent electronic switch as described in the first aspect, or the integrated circuit chip as described in the second aspect, or the chip product as described in the third aspect or the fourth aspect;

[0027] It also includes a battery, a load and a microcontroller; wherein the positive pole of the battery is connected to the power supply end, the negative pole of the battery is connected to the power ground end, one end of the load is connected to the load output end, the other end of the load is connected to the power ground end or the power supply end, and the microcontroller is connected to the high-side intelligent electronic switch.

[0028] The present application provides a high-side intelligent electronic switch, integrated circuit chip, chip product, and automobile. The high-side intelligent electronic switch includes a main power switch and a bypass switch, wherein the main power switch is an N-type switch tube and the bypass switch is a P-type switch tube. The control circuit includes a logic control unit, a first drive unit, and a second drive unit. The first drive unit includes a boost module and a first drive module. The boost module is connected to the power supply end of the first drive module. The second drive unit includes a second drive module. In normal operation mode, the boost module operates so that its output voltage is greater than the voltage of the power supply end. The logic control unit controls the N-type switch tube to turn on and conduct via the first drive module and controls the P-type switch tube to turn off and cut off via the second drive module. In bypass mode, the boost module stops operating, the logic control unit controls the P-type switch tube to turn on and conduct via the second drive module and controls the N-type switch tube to turn off and cut off via the first drive unit. In normal mode, the absolute value of the gate-source voltage of the N-type switch tube is greater than the absolute value of the gate-source voltage of the P-type switch tube in bypass mode. In this solution, in bypass mode, a P-type switch tube with a smaller absolute value of gate-source voltage is used as the power switch of the intelligent electronic switch. The required driving capability is relatively low. Therefore, the P-type switch tube can be driven to turn on and conduct without the need for a boost module, thereby outputting the required load current. While ensuring the normal operation of the load, the self-consumption of the intelligent electronic switch is reduced, solving the problem of relatively high self-consumption of the intelligent electronic switch. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present application and, together with the description, serve to explain the principles of the present application.

[0030] Figure 1 This is a schematic diagram of a circuit module of an electronic device provided in the first embodiment of the present application;

[0031] Figure 2A and Figure 2B 1 is a schematic diagram of a circuit module of an electronic device provided in a second embodiment of the present application;

[0032] Figure 2C yes Figure 2A and Figure 2B A schematic diagram of the circuit structure of the first driving unit;

[0033] Figure 3 This is a structural diagram of a current limiting drive unit in a high-side intelligent electronic switch provided in an embodiment of the present application;

[0034] Figure 4 This is a circuit structure diagram of an electronic device provided in the third embodiment of the present application.

[0035] The above drawings illustrate specific embodiments of the present application, which will be described in more detail below. These drawings and the textual description are not intended to limit the scope of the present application in any way, but rather to illustrate the concepts of the present application to those skilled in the art by reference to specific embodiments. DETAILED DESCRIPTION

[0036] To make the purpose, technical solutions, and advantages of the embodiments of this application more clear, the technical solutions in the embodiments of this application will be clearly and completely described below in conjunction with the drawings in the embodiments of this application. Obviously, the described embodiments are part of the embodiments of this application, not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0037] The terms "including" and "having" and any variations thereof as used in the specification, claims, and drawings of this application are intended to cover non-exclusive inclusions. For example, a process, method, system, product, or apparatus comprising a series of steps or modules is not limited to the listed steps or modules, but may optionally include steps or modules not listed, or may optionally include other steps or modules that are inherent to the process, method, product, or apparatus.

[0038] In addition, the terms "first", "second" and "third" are used to distinguish different objects, rather than to describe a specific order. The electrical connection in this application includes direct electrical connection and indirect electrical connection. Indirect electrical connection means that other electronic components, pins, etc. may exist between the two electrically connected components. The XX end mentioned in this application may be an actual terminal or may not be an actual terminal, for example, it is only one end of a component or one end of a wire. The "and / or" mentioned in this application includes three cases. For example, A and / or B includes three cases: A, B, and A and B.

[0039] In recent years, with the rapid growth of the automotive market, especially the explosive growth of electric vehicles (EVs), such as electric passenger cars and electric commercial vehicles, the demand for automotive electronic components has increased. Among the most in-demand electronic components in automobiles are relays, which are used to connect or disconnect a load circuit. However, relays have inherent disadvantages, such as long switching delays, high cost, and large size. Consequently, advances in semiconductor technology have led to the development of high-side smart electronic switches as an alternative to traditional relays. These switches are typically used to couple loads to batteries and include one or more diagnostic capabilities and protection features, such as protection against overtemperature, overload, and short-circuit events. For example, a high-side smart electronic switch includes a power switch. In the event of overtemperature, overload, or short-circuit conditions, the power switch is turned off, disconnecting the connection between the battery and the load.

[0040] It is understandable that in actual applications, the load types of high-side smart electronic switches are diverse (for example, inductors, capacitors, resistors, or a combination of the three) and the working environment is harsh, so the application end has particularly high requirements for its reliability. This requires the high-side smart electronic switch to work in normal working mode when there is a load current demand, and the drive unit used to drive the power switch on or off works normally. When the load is abnormal, for example, when the vehicle's load is short-circuited, it is necessary to stop the use of the load immediately to ensure the safety of the vehicle. Therefore, in the field of automotive electronics, the power switch in the high-side smart electronic switch is usually connected as a high-side switch.

[0041] As described in the background technology, the power switch of a high-side intelligent electronic switch is typically an N-type switch tube and is connected as a high-side switch. Furthermore, the condition for the N-type switch tube to turn on is that the gate-source voltage is greater than its turn-on threshold. Therefore, the drive unit of the high-side intelligent electronic switch must include a boost module to provide greater drive capability. Furthermore, as long as the intelligent electronic switch has a load current output, the drive unit requires the boost circuit to operate normally. This results in the intelligent electronic switch having high self-power consumption even when the connected load is small.

[0042] In response to the above technical problems, the inventors of this application have proposed a new technical concept after long-term research. In the original high-side intelligent electronic switch, a bypass loop is added. The bypass loop includes a P-type switch tube. Since the conduction threshold of the P-type switch tube is lower than the conduction threshold of the N-type switch, the driving capability required to drive the P-type switch tube to turn on is smaller. Correspondingly, the load current provided by the bypass loop is also relatively small. In this way, when the load current demand is large, the main power supply circuit is turned on by the first drive unit including the boost module and the first drive module, so that the high-side intelligent electronic switch is in normal working mode. At this time, the N-type switch tube is turned on and the P-type switch tube is turned on. When the load current demand is small, the first drive unit, i.e., the boost module and the first drive module, stop working, and the bypass loop is turned on via the second drive module, so that the high-side intelligent electronic switch operates in the bypass mode. At this time, the P-type switch tube is turned on and the N-type switch tube is turned off. In addition, in the normal mode, the absolute value of the gate-source voltage of the N-type switch tube is greater than the absolute value of the gate-source voltage of the P-type switch tube in the bypass mode. That is, in the bypass mode, the high-side intelligent electronic switch can also turn on the P-type switch tube even if the driving capability provided is small, thereby providing current to the load. Therefore, this solution solves the problem of high power consumption of the high-side intelligent electronic switch when the load is small.

[0043] The following specific embodiments describe in detail the technical solution of the present application and how the technical solution of the present application solves the above-mentioned technical problems. The following specific embodiments can be combined with each other, and the same or similar concepts or processes may not be repeated in some embodiments. The embodiments of the present application will be described below in conjunction with the accompanying drawings.

[0044] The present application embodiment provides an electronic device, which is, for example, a car. Figure 1 , Figure 11 is a schematic diagram of a circuit module of an electronic device provided in the first embodiment of the present application. The electronic device includes a battery 10, a load 30, a microcontroller 40, and a high-side intelligent electronic switch 20. The battery 10 is generally a storage battery that provides a voltage of 12V, 24V, 48V, 60V, or other voltages. Of course, the battery 10 can also be other types of batteries, such as lithium batteries or sodium batteries. The load 30 includes at least one of a resistive load, an inductive load, and a capacitive load. Resistive loads include, for example, seat adjustment devices, auxiliary heating devices, window heating devices, light-emitting diodes (LEDs), rear lighting, or other resistive loads. Inductive loads include, for example, pumps, actuators, motors, anti-lock braking systems (ABS), electronic braking systems (EBS), fans, or other systems including inductive loads for one or more wiper systems. Capacitive loads include, for example, lighting elements, such as xenon arc lamps. The microcontroller 40 is connected to the high-side intelligent electronic switch 20 for controlling the high-side intelligent electronic switch 20.

[0045] For example, in practical applications, the high-side intelligent electronic switch 20 includes a control circuit 21 and a switch circuit 22. Thus, the control circuit 21 can control the switch circuit 22 to operate in different states based on external signals, thereby enabling the high-side intelligent electronic switch 20 to operate in different modes. For example, the high-side intelligent electronic switch 20 can control the switch circuit 22 to turn on when it receives an on control signal, and to turn off when it receives an off control signal. Furthermore, based on the on-off state of the switch circuit 22 and the operating state of its internal functional circuits, the operating modes of the high-side intelligent electronic switch 20 can be divided into normal operating mode, bypass mode, standby mode, and sleep mode. When the switch circuit 22 is in the on-state and all functional circuits within the high-side intelligent electronic switch 20 are operating normally, the high-side intelligent electronic switch 20 is said to be operating in normal operating mode or active mode. Typically, in normal operating mode, the high-side intelligent electronic switch 20 can provide a large load current according to load requirements. When the switch circuit 22 is in the on state but the functional circuits integrated within the high-side intelligent electronic switch 20 are not operating or some modules within the functional circuits are not operating, the high-side intelligent electronic switch 20 is said to be operating in bypass mode. Since the power consumed by the high-side intelligent electronic switch 20 in bypass mode is relatively low, this bypass mode can also be called a low-power mode. In bypass mode, the load current provided by the high-side intelligent electronic switch 20 is less than the load current provided when it is in normal operating mode. When the switch circuit 22 is in the off state but the functional circuits within the high-side intelligent electronic switch 20 are all in normal operating mode, the high-side intelligent electronic switch 20 is said to be operating in standby mode. In this state, the high-side intelligent electronic switch 20 has no load current output but is in standby mode. Once it receives an on control signal, it can directly switch to normal operating mode. When the switch circuit 22 is in the off state and all functional circuits in the high-side intelligent electronic switch 20 are not operating, the high-side intelligent electronic switch 20 is said to be operating in a dormant mode or a sleep mode. At this time, the power consumption of the high-side intelligent electronic switch 20 is the lowest.

[0046] It is understood that in the embodiment of the present application, the switch circuit 22 includes a main power switch and a bypass switch. The switch circuit 22 is in the on-state when the main power switch is in the on-state or the bypass switch is in the on-state, which can be determined based on the operating mode of the high-side intelligent electronic switch 20. For example, when the high-side intelligent electronic switch 20 operates in the normal operating mode, the main power switch is in the on-state, and when the high-side intelligent electronic switch 20 operates in the bypass mode, the bypass switch is in the on-state.

[0047] Optionally, the difference between the high-side intelligent electronic switch 20 operating in the bypass mode and the normal operating mode is mainly reflected in the different self-power consumption of the high-side intelligent electronic switch 20 in the two modes. For example, it can be reflected in the different working states of the functional circuits in the high-side intelligent electronic switch 20, resulting in different power consumption of the functional circuits in the high-side intelligent electronic switch 20, thereby achieving different self-power consumption of the high-side intelligent electronic switch 20.

[0048] For example, this embodiment provides a high-side intelligent electronic switch 20 that can operate in bypass mode and normal operating mode. Figure 1 As shown, the high-side intelligent electronic switch 20 includes a power supply terminal VBAT, a power ground terminal GND, a load output terminal OUT, a control circuit 21, a main power switch and a bypass switch. Figure 1 As shown, the main power switch is an N-type switch tube N1, the bypass switch is a P-type switch tube P1, and the control circuit 21 includes a logic control unit 211, a first drive unit 212, and a second drive unit 213. The first drive unit 212 includes a boost module 2121 and a first drive module 2122. The boost module 2121 is connected to the power supply terminal of the first drive module 2122. The second drive unit 213 includes a second drive module.

[0049] The power supply terminal VBAT and the power ground terminal GND are used to connect to the battery 10. Specifically, the power supply terminal VBAT is connected to the positive electrode of the battery 10, and the power ground terminal GND is connected to the negative electrode of the battery 10. The load output terminal OUT is used to connect to the load 30. The drain and source of the N-type switch transistor N1 and the source and drain of the P-type switch transistor P1 are respectively connected to the power supply terminal VBAT and the load output terminal OUT. The control terminal of the N-type switch transistor N1 is connected to the first driver module 2122, and the control terminal of the P-type switch transistor P1 is connected to the second driver module. The first driver module 2122 and the second driver module are both connected to the logic control unit 211.

[0050] As an example, in normal operation mode, the boost module 2121 operates, the output voltage of the boost module 2121 is greater than the voltage of the power supply terminal VBAT, and the logic control unit 211 controls the N-type switch N1 to turn on and conduct via the first driver module 2122, and controls the P-type switch P1 to turn off and cut off via the second driver module. As another example, in bypass mode, the boost module 2121 stops operating, the logic control unit 211 controls the P-type switch P1 to turn on and conduct via the second driver module, and controls the N-type switch N1 to turn off and cut off via the first driver module 2122, and the absolute value of the gate-source voltage of the N-type switch N1 in normal mode is greater than the absolute value of the gate-source voltage of the P-type switch P1 in bypass mode.

[0051] For example, in practical applications, the high-side intelligent electronic switch 20 may further include an input terminal Input, which may be connected to an external microcontroller 40 via the input terminal Input. The control circuit 21 may control the switching state of the switch circuit 22 based on a switch control signal (Input signal) received from the microcontroller 40. For example, if the switch control signal received by the control circuit 21 is an on control signal on, the logic control unit 211 controls the N-type switch N1 to be turned on via the first drive unit 212 or controls the P-type switch P1 to be turned off via the second drive unit 213. If the switch control signal received by the control circuit 21 is an off control signal off, the control circuit 21 controls the N-type switch N1 to be turned off via the first drive unit 212 and controls the P-type switch P1 to be turned off via the second drive unit 213.

[0052] Optionally, in actual applications, to meet the load's operating requirements and low power consumption requirements, the operating mode of the high-side intelligent electronic switch 20 and the corresponding relationship between the first drive unit 212, the second drive unit 213, and the operating mode are set. In this way, the logic control unit 211 can control the operating states of the first drive unit 212 and the second drive unit 213 according to the operating mode of the high-side intelligent electronic switch 20, and further control the switching states of the N-type switch N1 and the P-type switch P1. For example, in normal operating mode, the logic control unit 211 drives the N-type switch N1 to turn on via the first drive unit 212, and in bypass mode, the logic control unit 211 drives the P-type switch P1 to turn on via the second drive unit 213.

[0053] When both the N-type switch N1 and the P-type switch P1 are MOS transistors, according to the turn-on characteristics of the N-type switch N1 and the P-type switch P1, when the N-type switch N1 is turned on, the absolute value of its gate-source voltage is greater than the first turn-on threshold, and when the P-type switch P1 is turned on, the absolute value of its gate-source voltage is greater than the second turn-on threshold, and the first turn-on threshold is greater than the second turn-on threshold. Since the N-type switch N1 is turned on when the high-side intelligent electronic switch 20 is in the normal operating mode and the P-type switch P1 is turned on when the high-side intelligent electronic switch 20 is in the bypass mode, the absolute value of the gate-source voltage of the N-type switch N1 in the normal mode is greater than the absolute value of the gate-source voltage of the P-type switch P1 in the bypass mode. Therefore, the driving capability of the first driving unit 212 for driving the N-type switch N1 is greater than the driving capability of the second driving unit 213 for driving the P-type switch P1. In this way, the high-side intelligent electronic switch 20 can drive the corresponding switch to turn on via the corresponding driving unit based on its operating mode. This ensures that the high-side intelligent electronic switch 20 can continuously provide load current even when the driving capability is relatively low, thereby improving the operating reliability of the high-side intelligent electronic switch 20. Furthermore, because the driving capability of the first driving unit 212 is greater than the driving capability of the second driving unit 213, the power consumption of the first driving unit 212 during operation is greater than the power consumption of the second driving unit 213 during operation. Therefore, the power consumption of the high-side intelligent electronic switch 20 in the bypass mode is less than that in the normal operating mode.

[0054] As an example, the area occupied by the P-type switch tube P1 is less than half the area occupied by the N-type switch tube N1.

[0055] In practical applications, when the N-type switch transistor N1 and the P-type switch transistor P1 are implemented by MOS transistors, since the larger the area of ​​the same type of MOS transistor, the greater its current driving capability, and the current driving capability of the N-type MOS transistor of the same area is greater than the current driving capability of the P-type MOS transistor of the same area, therefore, by setting the area occupied by the P-type switch transistor P1 to be less than half the area occupied by the N-type switch transistor N1, it can be ensured that the driving capability required by the second driving unit 213 to drive the P-type switch transistor P1 to turn on is less than the driving capability required by the first driving unit 212 to drive the N-type switch transistor N1 to turn on. Therefore, when the driving capability provided by the high-side intelligent electronic switch is relatively small, the P-type switch transistor P1 can be driven to turn on.

[0056] Optionally, the maximum current value flowing through the P-type switch tube P1 in the bypass mode is smaller than the maximum current value flowing through the N-type switch tube N1 in the normal operating mode.

[0057] In this embodiment, when both the small-area P-type switch P1 and the large-area N-type switch N1 are turned on, the current flowing through the P-type switch P1 is less than the current flowing through the N-type switch N1. Therefore, the maximum current flowing through the P-type switch P1 in bypass mode is less than the maximum current flowing through the N-type switch N1 in normal operation. This improves the reliability of the high-side intelligent electronic switch while ensuring its ability to continuously supply load current and reduces its self-consumption.

[0058] In this embodiment, since the area occupied by the P-type switch transistor P1 is less than half the area occupied by the N-type switch transistor N1, and the driving capability required when the N-type switch transistor N1 is turned on is greater than the driving capability required when the P-type switch transistor P1 is turned on, the current flowing through the N-type switch transistor N1 when the logic control unit 211 drives the N-type switch transistor N1 to be turned on via the first driving unit 212 in the normal operation mode is greater than the current flowing through the P-type switch transistor P1 when the logic control unit 211 drives the P-type switch transistor P1 to be turned on via the second driving unit 213 in the bypass mode.

[0059] Optionally, in one possible design of this embodiment, both the N-type switch N1 and the P-type switch P1 may be metal-oxide-semiconductor field-effect transistors (MOS FETs), junction field effect transistors (JFETs), or insulated gate bipolar transistors (IGBTs). In another possible design of this embodiment, the N-type switch N1 and the P-type switch P1 may also be implemented as silicon devices, or may be implemented using other semiconductor materials, such as silicon carbide (SiC), gallium arsenide (GaAs), or gallium nitride (GaN). The embodiment of this application does not limit the specific implementation forms of the N-type switch N1 and the P-type switch P1, which may be selected according to actual needs.

[0060] Optionally, in actual applications, a fuse (not shown) may be connected in series between the battery 10 and the power supply terminal VBAT to prevent malfunctions caused by excessive current in the line. Other components may be provided between the power ground terminal GND and the negative terminal of the battery 10, such as a parallel-connected anti-reverse polarity diode and a current-limiting resistor, to improve the stability of the high-side intelligent electronic switch 20.

[0061] Optional, in Figure 1In the schematic diagram shown, the connection relationship between the logic control unit 211, the first drive unit 212, the second drive unit 213, etc. and the power supply unit is not shown. However, in actual applications, a power supply unit can be provided inside the high-side intelligent electronic switch 20. The internal power supply unit is connected to the power supply terminal VBAT to step down the voltage of the power supply terminal VBAT. For example, the power supply unit is used to reduce the voltage of the power supply terminal VBAT from 12V to 5V. The voltage output by the power supply unit is used to provide the logic control unit 211, the first drive unit 212, the second drive unit 213 and other circuits. Optionally, one implementation of the power supply unit is a low drop out regulator (LDO). In other embodiments, the power supply unit may not be provided inside the high-side intelligent electronic switch 20. In this case, the positive electrode of the battery 10 is further connected to the step-down unit, which outputs the stepped-down voltage to the high-side intelligent electronic switch 20. For example, the voltage range of the step-down unit output to the power supply terminal VBAT is 3.3V-5V, which can directly power the logic control unit 211, the first drive unit 212, the second drive unit 213 and other circuits inside the high-side intelligent electronic switch 20.

[0062] In an embodiment of the present application, the main power switch is an N-type switch tube, the bypass switch is a P-type switch tube, and the control circuit includes a logic control unit, a first drive unit, and a second drive unit. The first drive unit includes a boost module and a first drive module. The boost module is connected to the power supply end of the first drive module, and the second drive unit includes a second drive module. In normal operating mode, the boost module works so that its output voltage is greater than the voltage of the power supply end. The logic control unit controls the N-type switch tube to turn on and conduct via the first drive module and controls the P-type switch tube to turn off and cut off via the second drive module; in bypass mode, the boost module stops working, the logic control unit controls the P-type switch tube to turn on and conduct via the second drive module and controls the N-type switch tube to turn off and cut off via the first drive module, and in normal mode, the absolute value of the gate-source voltage of the N-type switch tube is greater than the absolute value of the gate-source voltage of the P-type switch tube in bypass mode. In this way, in the bypass mode, a P-type switch tube with a smaller absolute value of the gate-source voltage is used as the power switch of the intelligent electronic switch. The required driving capability is relatively low. Therefore, the P-type switch tube can be driven to turn on and conduct without the need for the boost module to work, thereby outputting the required load current. Therefore, while ensuring the normal operation of the load, the self-consumption of the intelligent electronic switch is reduced, solving the problem of relatively high self-consumption of the intelligent electronic switch.

[0063] Optionally, the first embodiment provides a general introduction to the high-side intelligent electronic switch 20 , and the following explains the implementation principles of the first drive unit, the second drive unit, etc. through different embodiments.

[0064] Figure 2A and Figure 2B Schematic diagram of the circuit module of the electronic device provided in the second embodiment of the present application. Figure 2A and Figure 2B As shown, in this embodiment, in the high-side intelligent electronic switch 20, the first driving unit 212 may include at least a boost module 2121 (for example, a charge pump) and a first driving module 2122. The boost module 2121 is connected to the power supply terminal VBAT and the first driving module 2122. In the normal working mode, the boost module 2121 operates to make its output voltage greater than the voltage of the power supply terminal VBAT, so that the first driving module 2122 generates a driving signal based on the output voltage of the boost module 2121. When driving the N-type switch tube N1 to turn on, the gate-source voltage of the N-type switch tube N1 is greater than its turn-on threshold, thereby achieving the purpose of driving the N-type MOS tube to turn on.

[0065] It is understandable that the embodiments of the present application do not limit the specific structural composition of the first driving unit 212. It can also add or reduce different components according to actual circuit requirements. For example, the first driving unit 212 can also include elements such as a level shifter. The level shifter is connected between the logic control unit 211 and the first driving module. It can convert the received low-voltage control signal into a high-voltage control signal output, thereby realizing the control of the high-voltage output stage by the low-voltage logic, and further realizing driving the N-type switch tube N1 to turn on and conduct.

[0066] For example, Figure 2C yes Figure 2A and Figure 2B Schematic diagram of the circuit structure of the first driving unit. Figure 2CAs shown, the boost module is implemented in the form of a charge pump. For example, the charge pump includes an oscillator, a P-type MOS transistor CP_P1, an N-type MOS transistor CP_N1, capacitors C1 and C2, and diodes D1 and D2. The control terminals of the P-type MOS transistor CP_P1 and the N-type MOS transistor CP_N1 are connected to the oscillator, the drain of the P-type MOS transistor CP_P1 is connected to the power supply terminal VBAT, and its source is connected to the source of the N-type MOS transistor CP_N1 at a connection point A1. The drain of the N-type MOS transistor CP_N1 is connected to the first power supply terminal Vs. Based on the voltage withstand capability of the P-type MOS transistor CP_P1 and the N-type MOS transistor CP_N1, for example, 5V, the first power supply terminal Vs is generally 5V lower than the voltage of the power supply terminal VBAT. One end of the capacitor C1 is connected to the connection point A1, and the other end is connected to the cathode of the diode D1 and the anode of the diode D2. The anode of the diode D1 and one end of the capacitor C2 are both connected to the power supply terminal VBAT, and the cathode of the diode D2 is connected to the other end of the capacitor C2. The oscillator is used to generate an oscillation frequency to turn on or off the P-type MOS transistor CP_P1 and the N-type MOS transistor CP_N1. The capacitor C1 is used to increase the voltage output by the charge pump. The capacitor C2 is used to store energy. The diodes D1 and D2 are used to limit the current direction.

[0067] Optional, continue to refer to Figure 2C As shown, the driving module may include a switch tube D_P1 and a switch tube D_N1. The control end of the main power switch Q1 is connected to the drains of the switch tube D_P1 and the switch tube D_N1. The control ends of the switch tubes D_P1 and D_N1 are both connected to the logic control unit 211. The source of the switch tube D_P1 is connected to the output end of the boost module, the source of the switch tube D_N1 is connected to the load output end OUT, and the control ends of the switch tubes D_P1 and D_N1 are both connected to the logic control unit 211. In this way, the logic control unit 211 can turn on the power switch Q (N-type MOS tube) by controlling the switch tube D_P1 to turn on and the switch tube D_N1 to turn off, and turn off the power switch Q when the switch tube D_P1 is turned off and the switch tube D_N1 is turned on.

[0068] Optionally, in an embodiment of the present application, the second drive unit 213 is a current limiting drive unit, which is connected to the logic control unit 211. In the bypass mode, the logic control unit 211 controls the P-type switch tube P1 to turn on via the current limiting drive unit, and the current flowing through the P-type switch tube P1 is less than or equal to the first current limiting value set by the current limiting drive unit.

[0069] In this embodiment, in view of the conduction characteristics of the P-type switch tube P1, the second driving unit 213 that drives the P-type switch tube P1 to turn on does not require a boost module, etc. Therefore, the power consumption of the second driving unit 213 when working is less than the power consumption of the first driving unit 212 when working.

[0070] For example, when the second driving unit 213 is a current-limiting driving unit, due to the current-limiting function of the current-limiting driving unit, the current-limiting driving unit can also set a maximum current value flowing through the P-type switch tube P1 when driving the P-type switch tube P1 to turn on, that is, set a first current limit value. Therefore, in bypass mode, when the logic control unit 211 drives the P-type switch tube P1 to turn on via the current-limiting driving unit, the current value flowing through the P-type switch tube P1 is less than or equal to the first current limit value set by the current-limiting driving unit.

[0071] For example, continue to refer to Figure 2A and Figure 2B As shown, in this embodiment, the current limiting driving unit includes a P-type transistor M1 and a constant current source I1. That is, the P-type transistor M1 and the P-type switch tube are of the same type, for example, both are PMOS tubes. The P-type transistor M1 and the constant current source I1 are connected to form a current limiting driving branch, and one end of the current limiting driving branch is connected to one end of the P-type switch tube.

[0072] Among them, one end of the constant current source O1 is connected to the power ground terminal GND or the load output terminal OUT, the other end of the constant current source I1 is connected to the drain of the P-type transistor M1, the source of the P-type transistor M1 and the source of the P-type switch tube P1 are both connected to the power supply terminal VBAT, the drain of the P-type transistor M1 is connected to its control terminal and the control terminal of the P-type switch tube P1, the drain of the P-type switch tube P1 is connected to the load output terminal OUT, and the control terminal of the current limiting drive unit is connected to the logic control unit 211.

[0073] As an example, see Figure 2A As shown, one end of the constant current source O1 is connected to the power ground GND, and Figure 2B In the illustrated embodiment, one end of the constant current source 11 is connected to the load output terminal OUT. It is understood that when the source of the P-type transistor M1 and the source of the P-type switch tube P1 are both connected to the power supply terminal VBAT, the P-type switch tube P1 can be driven by connecting one end of the constant current source O1, which is away from the P-type transistor M1, to the power ground terminal GND or to the load output terminal OUT. However, when one end of the constant current source O1 is connected to the load output terminal OUT, the sum of the current flowing through the P-type transistor M1 and the current flowing through the P-type switch tube is equal to the current at the load output terminal OUT. This may result in the first current limit value set by the current limiting drive unit being relatively small, which is not explained here.

[0074] Optionally, in bypass mode, the logic control unit 211 controls the current limiting driving unit to operate, and the first current limiting value set by the current limiting driving unit is related to the current value provided by the constant current source O1 and the current mirror ratio of the P-type transistor M1 and the P-type switch tube P1.

[0075] In an embodiment of the present application, when the P-type switching tube includes a P-type MOS tube, the ratio of the first current limiting value to the current value provided by the constant current source O1 is equal to the ratio of the width-to-length ratio of the P-type switching tube P1 to the width-to-length ratio of the P-type transistor M1. The current value provided by the constant current source O1 is equal to the current value flowing through the P-type transistor M1, and the ratio of the current value flowing through the P-type switching tube P1 to the output current value of the P-type transistor M1 is equal to the ratio of the width-to-length ratio of the P-type switching tube P1 to the width-to-length ratio of the P-type transistor M1. Furthermore, when the P-type transistor M1 and the P-type switching tube P1 operate in a saturation region, the current value flowing through the P-type switching tube P1 is equal to the first current limiting value set by the current limiting drive unit. Therefore, in this embodiment, the ratio of the first current limiting value to the current value provided by the constant current source O1 is equal to the ratio of the width-to-length ratio of the P-type switching tube P1 to the width-to-length ratio of the P-type transistor M1.

[0076] For example, in the present application, the value range of the first current limit value may be 1uA to 100uA. For example, the first current limit value may be 10uA. It is understandable that the first value range may also be other values, which is not limited in this embodiment.

[0077] Optionally, the embodiments of the present application do not limit the method for controlling the enabling of the current limiting drive unit. For example, as an example, the constant current source O1 includes an enable terminal. In the bypass mode, the logic control unit 211 can turn on the current limiting drive branch by controlling the enabling of the constant current source O1, thereby enabling the current limiting drive unit to work; as another example, the current limiting drive branch can also include a second switch module. In the bypass mode, the logic control unit 211 can enable the constant current drive unit to work by controlling the second switch module to turn on.

[0078] Optionally, in this embodiment, in normal operating mode, the first driving unit 212 drives the N-type switch tube N1 to operate in the linear resistance region; in bypass mode, the current limiting driving unit drives the P-type switch tube P1 to operate in the linear resistance region or the saturation region.

[0079] Optionally, in bypass mode, when the rated operating current of the load is less than or equal to the first current limiting value, the P-type switch tube P1 operates in the linear resistance region; when the rated operating current of the load is greater than the first current limiting value, the P-type switch tube P1 operates in the saturation region.

[0080] As an example, in normal operating mode, after the first driving unit 212 drives the N-type switch N1 to turn on, the current flowing through the N-type switch N1 can vary with the load within the output current range that the N-type switch N1 can provide. According to the output characteristic curve of the power switch, the N-type switch N1 is now operating in the linear resistance region. In bypass mode, after the current limiting driving unit drives the P-type switch P1 to turn on, when the current flowing through the P-type switch P1 is less than a first current limit value set by the current limiting driving unit, the current flowing through the P-type switch P1 can vary with the load, and the P-type switch P1 is now operating in the linear resistance region. When the current flowing through the P-type switch P1 reaches the first current limit value set by the current limiting driving unit, the current flowing through the P-type switch P1 substantially remains constant as the load increases, and the P-type switch P1 is now operating in the saturation region.

[0081] It is understandable that in a specific implementation, the current limiting drive unit can also be implemented through other structures. For example, the current limiting drive unit can also include one or more mirror units, or the constant current source is replaced with a constant current source of other specifications and one or more mirror units, etc. Correspondingly, the connection relationship of the internal circuit elements of the current limiting drive unit can also be adjusted according to actual needs, etc. This embodiment does not limit the specific structure of the current limiting drive unit.

[0082] In this embodiment, the current limiting driving unit can set the maximum current value flowing through the P-type switching tube through a current source and a transistor. Its structure is simple and easy to implement. Moreover, compared with the first driving unit, its power consumption is lower, saving power consumption while meeting the load current requirements.

[0083] Optionally, in practical applications, the current limiting drive unit can be Figure 2A and Figure 2B The structure in the embodiment shown can also be implemented in other ways. Figure 3 The structural schematic diagram shown explains the current limiting drive unit.

[0084] For example, Figure 3 Schematic diagram of the structure of the current limiting drive unit in the high-side intelligent electronic switch provided in the embodiment of the present application. Figure 3 As shown, in this embodiment, the current limiting driving unit includes a second driving module DR2, a P-type sampling tube Qr, a first resistor R1, a current limiting switch tube Px and a current limiting operational amplifier unit CL-OP.

[0085] Among them, the source of the P-type sampling transistor Qr is connected to the source of the P-type switching transistor P1, and the drain of the P-type sampling transistor Qr is connected to the drain of the P-type switching transistor P1 via the first resistor R1. The control end of the P-type sampling transistor Qr and the control end of the P-type switching transistor P1 are both connected to the output end of the second driving module DR2. The output end of the second driving module DR2 is also connected to the first end of the current limiting switching transistor Px. The second end of the current limiting switching transistor Px is connected to the drain of the P-type switching transistor P1. The source of the current limiting switching transistor Px is connected to the power supply terminal VBAT. The control end of the current limiting switching transistor Px is connected to the output end of the current limiting operational amplifier unit CL-OP. The first input end of the current limiting operational amplifier unit CL-OP is connected to the connection point A between the P-type sampling transistor Qr and the first resistor R1. The first input end of the current limiting operational amplifier unit CL-OP is used to access the reference voltage Vref-out.

[0086] Reference Figure 3 As shown, a branch switch kr can be connected to the sampling branch where the P-type sampling tube Qr and the first resistor R1 are located. In the bypass mode, the logic control unit 211 controls the branch switch kr to be turned on, which can control the sampling branch where the P-type sampling tube Qr and the first resistor R1 to be turned on. At this time, based on the driving action of the second driving module DR2, a current (i.e., a sampling current) flows through the P-type sampling tube Qr. Due to the voltage divider effect of the first resistor R1, the sampling voltage at the connection point A changes with the change of the sampling current. If the sampling current is larger, the sampling voltage is larger, and if the sampling current is smaller, the sampling voltage is larger. The smaller the sampling voltage, the more the current-limiting operational amplifier unit CL-OP can compare the sampling voltage with the reference voltage Vref-out. When the sampling voltage is greater than the reference voltage Vref-out, the current-limiting operational amplifier unit CL-OP outputs a current-limiting signal to the current-limiting switch transistor Px, turning on the current-limiting switch transistor Px. This then clamps and pulls up the voltage output by the second driver module DR2. This increases the drive signal output by the second driver module DR2 to the P-type sampling transistor Qr and the P-type switch transistor P1, reducing the current flowing through the P-type switch transistor P1 and thus achieving the current limiting function. Therefore, the driving capability of the current-limiting driver unit is related to the maximum output voltage of the second driver module DR2 and the reference voltage Vref-out.

[0087] It is understood that in this example, referring to Figure 3 As shown, when the branch where the P-type sampling tube Qr and the first resistor R1 are located is turned on, the current limiting driving unit is used to set the first current limiting value, and when the branch where the P-type sampling tube Qr and the first resistor R1 are located is turned off, the current limiting driving unit has a driving function but does not limit the current.

[0088] It is understandable that in each embodiment of the present application, the specific structural composition of the second driving unit 213 or the current limiting driving unit is not limited, and different components can be added according to actual circuit requirements.

[0089] In an embodiment of the present application, when the main circuit includes an N-type switch tube and the bypass switch includes a P-type switch tube, by setting a specific implementation of the first drive unit and the second drive unit, it can select different drive units to drive the corresponding switch tube according to the working mode of the high-side intelligent electronic switch, under the premise of meeting the load current requirement. That is, in the normal working mode, the N-type switch tube is driven to turn on and conduct via the first drive unit including the first drive module and the boost module; in the bypass mode, the P-type switch tube is driven to turn on and conduct via the current limiting drive unit, and the absolute value of the gate-source voltage of the N-type switch tube in the normal mode is greater than the absolute value of the gate-source voltage of the P-type switch tube in the bypass mode. In this way, in the bypass mode, the driving capability required for the high-side intelligent electronic switch to provide the load current is reduced, thereby improving the reliability of the high-side intelligent electronic switch during use.

[0090] Optionally, based on the above embodiment, Figure 4 This is a schematic diagram of a circuit structure of an electronic device provided in the third embodiment of the present application. Figure 4 As shown, the high-side intelligent electronic switch 20 may further include a diagnostic circuit 23 and a diagnostic output terminal CS. The diagnostic circuit 23 is connected to the logic control unit 211 and the diagnostic output terminal CS. The diagnostic circuit 23 is used to collect parameter information of the high-side intelligent electronic switch 20 and output it to the microcontroller 40 via the diagnostic output terminal CS, so that the microcontroller 40 can diagnose the status of the high-side intelligent electronic switch 20.

[0091] In normal operating mode, the logic control unit 211 controls the diagnostic circuit 23 to operate in a first diagnostic state. In bypass mode, the logic control unit 211 controls the diagnostic circuit 23 to operate in a second diagnostic state, and the power consumption of the diagnostic circuit 23 operating in the second diagnostic state is less than the power consumption of the diagnostic circuit 23 operating in the first diagnostic state. For example, in normal operating mode, the diagnostic circuit 23 operates normally, while in bypass mode, the diagnostic circuit 23 stops operating, or some modules of the diagnostic circuit 23 stop operating, or the diagnostic circuit 23 operates in a power-saving state, or some modules of the diagnostic circuit 23 operate in a power-saving state. The power-saving state may be a periodic operating state.

[0092] In this embodiment, the diagnostic circuit 23 can monitor certain operating indicators of the high-side intelligent electronic switch 20 and obtain parameter information of the high-side intelligent electronic switch 20 when the N-type switch tube N1 and / or the P-type switch tube P1 are in the on state, and output the parameter information to the microcontroller 40 through the diagnostic output terminal CS. In this way, the microcontroller 40 can diagnose the status of the high-side intelligent electronic switch 20 based on the received parameter information.

[0093] For example, the diagnostic circuit 23 operates normally in normal operating mode, while in bypass mode, the diagnostic circuit 23 stops operating. Therefore, when the high-side intelligent electronic switch 20 operates in normal operating mode, the diagnostic circuit 23 can obtain at least one of information about the current flowing through the N-type switch N1, information about the temperature of the N-type switch N1, information about the power supply voltage of the high-side intelligent electronic switch 20, and abnormal indication information indicating that the N-type switch N1 is abnormally shut down. Based on the function selection of the microcontroller 40, the diagnostic circuit 23 can output the corresponding parameter information to the microcontroller 40 via the diagnostic output terminal CS, so that the microcontroller 40 can diagnose the status of the high-side intelligent electronic switch 20 and more accurately control the operating status of the high-side intelligent electronic switch 20.

[0094] In this technical solution, when the high-side intelligent electronic switch 20 controls the N-type switch tube N1 or the P-type switch tube P1 to be in the on state, it can also control the working state of the diagnostic circuit 23 according to the working mode of the high-side intelligent electronic switch 20. On the basis of ensuring the normal operation of the load, the reliability of the high-side intelligent electronic switch 20 during operation is improved, the self-consumption of the high-side intelligent electronic switch 20 is effectively reduced, the battery life of the battery connected to the high-side intelligent electronic switch 20 is extended, and the application experience is improved.

[0095] Optionally, in the embodiments of this application, continue to refer to Figure 4 As shown, the high-side intelligent electronic switch 20 may further include a protection circuit 24, which is connected to the logic control unit 211 and is configured to protect the high-side intelligent electronic switch 20. When the high-side intelligent electronic switch 20 operates in normal operation mode, the logic control unit 211 controls the N-type switch N1 to turn on via the first drive unit 212, and may also control the protection circuit 24 to operate in a first protection state. When the high-side intelligent electronic switch 20 operates in bypass mode, the logic control unit 211 controls the P-type switch P1 to turn on via the second drive unit 213, and may also control the protection circuit 24 to operate in a second protection state. The power consumption of the protection circuit 24 operating in the second protection state is less than that in the first protection state, thereby reducing the power consumption of the protection circuit 24 in the bypass mode.

[0096] For example, the protection circuit 24 may include at least one of a current protection unit, an over-temperature protection unit, a voltage protection unit, and the like.

[0097] Among them, the current protection unit can trigger current protection of the high-side intelligent electronic switch 20 when the current flowing through the switch circuit 22 (including the main power switch (N-type switch tube) and / or the bypass switch (P-type switch tube)) is abnormal. The current protection unit includes an overcurrent protection unit and / or a current limiting protection unit. The overcurrent protection unit outputs an overcurrent protection signal when it determines that the current sampling value is greater than the overcurrent protection threshold, so as to trigger the control circuit 21 to drive the switch circuit 22 to be turned off. The current limiting protection unit outputs a current limiting protection signal when it determines that the current sampling value is greater than the current limiting protection threshold, so as to trigger the control circuit 21 to adjust the size of the control signal output to the control end of the switch circuit 22 to reduce the current flowing through the switch circuit 22, thereby making the current sampling value less than or equal to the current limiting protection threshold. Optionally, the power consumption of the current protection unit in the bypass mode is less than its power consumption in the normal working mode. For example, in the bypass mode, the current protection unit stops working.

[0098] The temperature protection unit is configured to output a temperature protection signal upon detecting an abnormal temperature of the switch circuit 22, thereby triggering temperature protection of the switch circuit 22. The power consumption of the temperature protection unit in bypass mode is lower than that in normal operating mode. For example, the temperature protection threshold of the temperature protection unit in bypass mode is lower than that in normal operating mode, or a temperature protection unit with lower power consumption is selected in bypass mode.

[0099] The voltage protection unit is used to trigger voltage protection for the high-side intelligent electronic switch 20 when detecting an abnormal voltage at the power supply terminal VBAT and outputting an abnormal voltage signal. The power consumption of the voltage protection unit in bypass mode is less than that in normal working mode.

[0100] Optionally, the voltage protection unit may include an overvoltage protection unit and / or an undervoltage protection unit. The overvoltage protection unit is configured to trigger overvoltage protection for the high-side intelligent electronic switch 20 when detecting that the voltage of the power supply terminal VBAT is higher than a first voltage threshold. For example, when the voltage VBAT of the power supply terminal VBAT is greater than the first voltage threshold, the logic control unit 211 may be used to shut down the switch circuit 22 or the voltage of the power supply terminal VBAT may be pulled down by a voltage clamp circuit to reduce the voltage of the power supply terminal VBAT, thereby protecting the high-side intelligent electronic switch 20 from being damaged by high voltage. The undervoltage protection unit is configured to trigger undervoltage protection for the high-side intelligent electronic switch 20 when detecting that the voltage of the power supply terminal VBAT is lower than a second voltage threshold. For example, when the voltage of the power supply terminal VBAT is lower than the second voltage threshold, the logic control unit 211 may be used to shut down the switch circuit 22 to prohibit the high-side intelligent electronic switch 20 from being used, thereby improving the reliability of the high-side intelligent electronic switch 20 when in use.

[0101] In practical applications, multiple protection units or one or more of the multiple protection units can be designed in the high-side intelligent electronic switch 20 at the same time. For example, the high-side intelligent electronic switch 20 can have a current protection unit, an over-temperature protection unit, a voltage protection unit, etc., or it can have only one or more of them. When the high-side intelligent electronic switch 20 is designed with at least two protection units at the same time, in the bypass mode, at least one protection unit in the protection circuit 24 stops working or works in an energy-saving state, so as to reduce the power consumption of the protection circuit 24, thereby reducing the self-consumption of the high-side intelligent electronic switch 20.

[0102] Optionally, in other embodiments of the present application, continue to refer to Figure 4 As shown, the high-side intelligent electronic switch 20 further includes a first functional terminal FU1 and a second functional terminal FU2, both of which are connected to a logic control unit 211. When the first functional terminal FU1 receives a first signal and the second functional terminal FU2 receives a second signal, the logic control unit 211 controls the high-side intelligent electronic switch 20 to enter a bypass mode. The self-consumption of the high-side intelligent electronic switch 20 in the bypass mode is less than the self-consumption of the high-side intelligent electronic switch 20 in the normal working mode. In the normal working mode, the main power switch is in an on-state, while in the bypass mode, the P-type switch tube P1 is in an on-state.

[0103] For example, in order to be fully compatible with the original functions of the high-side intelligent electronic switch 20, the first function terminal FU1 and the second function terminal FU2 can reuse any two of the input terminal Input, the diagnostic enable terminal SEN, the first function selection terminal SEL1, the second function selection terminal SEL0, the diagnostic release terminal Fault, and other terminals of the high-side intelligent electronic switch 20.

[0104] As an example, the first functional terminal FU1 can reuse the diagnostic enable terminal SEN, and the second functional terminal FU2 can reuse the input terminal Input. In other examples, the first functional terminal FU1 and the second functional terminal FU2 can also reuse other terminals, which are not limited in the embodiments of the present application. It is understood that in other embodiments of the present application, the first functional terminal FU1 and / or the second functional terminal FU2 can also be newly added terminals of the high-side intelligent electronic switch 20, or a combination of newly added terminals and existing terminals, which are not limited in the embodiments of the present application.

[0105] Optional, see Figure 4As shown, the high-side intelligent electronic switch 20 is connected to the microcontroller 40 via the first functional terminal FU1 and the second functional terminal FU2. In this way, the logic control unit 211 can receive the first signal from the microcontroller 40 via the first functional terminal FU1 and the second signal from the microcontroller 40 via the second functional terminal FU2. In other embodiments, the logic control unit 211 can also receive the first signal and the second signal from other devices or circuits via the first functional terminal FU1 and the second functional terminal FU2, which is not limited in this embodiment of the present application.

[0106] Optionally, when the high-side intelligent electronic switch 20 operates in the normal operating mode, if the first functional terminal FU1 receives a first signal and the second functional terminal FU2 receives a second signal, the logic control unit 211 can control the high-side intelligent electronic switch 20 to enter the bypass mode to reduce the self-power consumption of the high-side intelligent electronic switch 20.

[0107] It is understandable that other parts not detailed in one embodiment of the present application can be referred to the records in other embodiments of the present application and will not be repeated here.

[0108] Optionally, based on the above embodiments, an embodiment of the present application further provides an integrated circuit chip, comprising the high-side intelligent electronic switch 20 of the above embodiments. That is, the high-side intelligent electronic switch 20 can be fabricated on the same semiconductor substrate. The power supply terminal VBAT is a power supply pin, the power ground terminal GND is a power ground pin, and the load output terminal OUT is a load output pin.

[0109] Optionally, other embodiments of the present application further provide a chip product, which may include the above-described high-side intelligent electronic switch 20. As an example, components of the high-side intelligent electronic switch 20 other than the main power switch are located on a first integrated circuit chip, and the main power switch is located on a second integrated circuit chip. That is, the first integrated circuit chip is fabricated on one semiconductor substrate, and the second integrated circuit chip is fabricated on another semiconductor substrate.

[0110] As another example, components of the high-side intelligent electronic switch 20 except the main power switch and the bypass switch are located on a first integrated circuit chip, and the main power switch and the bypass switch are located on a second integrated circuit chip.

[0111] Among them, the power supply terminal VBAT is the power supply pin, the power ground terminal GND is the power ground pin, and the load output terminal OUT is the load output pin. The power supply pin and the power ground pin are located on the first integrated circuit chip, and the load output pin is located on the second integrated circuit chip. In addition, the first integrated circuit chip also includes other pins, such as input pins, diagnostic enable pins, diagnostic output pins, first drive pins, etc., and the second integrated circuit chip also includes other pins, such as second drive pins, wherein the first drive pin is connected to the drive circuit and the second drive pin respectively, and the second drive pin is connected to the control end of the main power switch and / or the bypass switch. It can be understood that the first integrated circuit chip and the second integrated circuit chip can also add other pins, omit related pins, or merge related pins as needed. Here, the first integrated circuit chip and the second integrated circuit chip are packaged into one product.

[0112] In addition, in other embodiments of the present application, a car is also provided. The car can be an electric car, such as an electric passenger car or an electric commercial vehicle, or a hybrid car or a fuel car. Figures 1 to 4 As shown, the car includes a battery 10 , a load 30 , a microcontroller 40 and a high-side intelligent electronic switch 20 .

[0113] The microcontroller 40 is connected to the high-side intelligent electronic switch 20 for controlling the high-side intelligent electronic switch 20 . Meanwhile, the high-side intelligent electronic switch 20 feeds back its status and related parameter information to the microcontroller 40 for processing by the microcontroller.

[0114] It is understandable that the high-side intelligent electronic switch and integrated circuit chip of this embodiment are not limited to use in automotive electronics, but can also be used in industrial automation, aerospace and other fields, which will not be described in detail here.

[0115] Those skilled in the art will readily appreciate other embodiments of the present application after considering the specification and practicing the application disclosed herein. This application is intended to cover any variations, uses, or adaptations of the present application that follow the general principles of the present application and include common knowledge or customary techniques in the art not disclosed herein. The description and examples are to be considered as exemplary only, and the true scope and spirit of the present application are indicated by the following claims.

[0116] It should be understood that the present application is not limited to the exact structure described above and shown in the drawings, and that various modifications and changes may be made without departing from the scope thereof. The scope of the present application is limited only by the appended claims.

Claims

1. A high-side intelligent electronic switch, characterized in that: It includes power supply terminal, power ground terminal, load output terminal, control circuit, main power switch and bypass switch; The main power switch is an N-type switch tube, the bypass switch is a P-type switch tube, the control circuit includes a logic control unit, a first drive unit and a second drive unit, the first drive unit includes a boost module and a first drive module, the boost module is connected to the power supply end of the first drive module, and the second drive unit includes a second drive module; The power supply terminal and the power ground terminal are used to be connected to a battery, the load output terminal is used to be connected to a load, the drain and source of the N-type switch tube, and the source and drain of the P-type switch tube are correspondingly connected to the power supply terminal and the load output terminal, the control terminal of the N-type switch tube is connected to the first drive module, and the control terminal of the P-type switch tube is connected to the second drive module, and the first drive module and the second drive module are both connected to the logic control unit; In normal working mode, the boost module works, the output voltage of the boost module is greater than the voltage of the power supply end, and the logic control unit controls the N-type switch tube to turn on and conduct via the first drive module and controls the P-type switch tube to turn off and cut off via the second drive module; in bypass mode, the boost module stops working, the logic control unit controls the P-type switch tube to turn on and conduct via the second drive module and controls the N-type switch tube to turn off and cut off via the first drive module, and in normal mode, the absolute value of the gate-source voltage of the N-type switch tube is greater than the absolute value of the gate-source voltage of the P-type switch tube in the bypass mode.

2. The high-side intelligent electronic switch according to claim 1, characterized in that: The area occupied by the P-type switch tube is less than half of the area occupied by the N-type switch tube.

3. The high-side intelligent electronic switch according to claim 1, characterized in that: The maximum current value flowing through the P-type switch tube in the bypass mode is smaller than the maximum current value flowing through the N-type switch tube in the normal operating mode.

4. The high-side intelligent electronic switch according to any one of claims 1 to 3, characterized in that: The second driving unit is a current limiting driving unit, which is connected to the logic control unit and the P-type switch tube. In the bypass mode, the logic control unit controls the P-type switch tube to turn on through the current limiting driving unit, and the current flowing through the P-type switch tube is less than or equal to the first current limiting value set by the current limiting driving unit.

5. The high-side intelligent electronic switch according to claim 4, characterized in that: The current limiting driving unit includes a P-type transistor and a constant current source; Wherein, one end of the constant current source is connected to the power ground terminal or the load output terminal, the other end of the constant current source is connected to the drain of the P-type transistor, the source of the P-type transistor and the source of the P-type switch tube are both connected to the power supply terminal, the drain of the P-type transistor is connected to its control terminal and the control terminal of the P-type switch tube, the drain of the P-type switch tube is connected to the load output terminal, and the control terminal of the current limiting drive unit is connected to the logic control unit; In bypass mode, the logic control unit controls the operation of the current limiting drive unit, and the first current limiting value set by the current limiting drive unit is related to the current value provided by the constant current source and the current mirror ratio of the P-type transistor and the P-type switch tube.

6. The high-side intelligent electronic switch according to claim 5, characterized in that: The P-type switch tube includes a P-type MOS tube, and the ratio of the first current limiting value to the current value provided by the constant current source is equal to the ratio of the width-to-length ratio of the P-type switch tube to the width-to-length ratio of the P-type transistor.

7. The high-side intelligent electronic switch according to claim 5, characterized in that: In the normal operating mode, the N-type switch tube is turned on and operates in the linear resistance region; in the bypass mode, the P-type switch tube is turned on and operates in the saturation region.

8. An integrated circuit chip, characterized in that: The high-side intelligent electronic switch according to any one of claims 1 to 7, wherein the power supply end is a power supply pin, the power ground end is a power ground pin, and the load output end is a load output pin.

9. A chip product, characterized in that: The high-side intelligent electronic switch according to any one of claims 1 to 7, wherein components of the high-side intelligent electronic switch other than a main power switch are located on a first integrated circuit chip, and the main power switch is located on a second integrated circuit chip; Among them, the power supply end is a power supply pin, the power ground end is a power ground pin, and the load output end is a load output pin. The power supply pin and the power ground pin are located on a first integrated circuit chip, and the load output pin is located on a second integrated circuit chip.

10. A chip product, characterized in that: The high-side intelligent electronic switch according to any one of claims 1 to 7, wherein components of the high-side intelligent electronic switch other than a main power switch and a bypass switch are located on a first integrated circuit chip, and the main power switch and the bypass switch are located on a second integrated circuit chip; Among them, the power supply end is a power supply pin, the power ground end is a power ground pin, and the load output end is a load output pin. The power supply pin and the power ground pin are located on a first integrated circuit chip, and the load output pin is located on a second integrated circuit chip.

11. An automobile, characterized in that: Comprising the high-side intelligent electronic switch according to any one of claims 1 to 7, or the integrated circuit chip according to claim 8, or the chip product according to claim 9 or 10; It also includes a battery, a load and a microcontroller; wherein the positive pole of the battery is connected to the power supply end, the negative pole of the battery is connected to the power ground end, one end of the load is connected to the load output end, the other end of the load is connected to the power ground end or the power supply end, and the microcontroller is connected to the high-side intelligent electronic switch.

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