Ion beam generating device

Abstract

The utility model belongs to the technical field of ion implantation, and provides an ion beam generation device which comprises an ionization chamber, a first feeding assembly, a second feeding assembly and a cathode assembly, the first feeding assembly is located outside the ionization chamber, communicated with the ionization chamber and capable of providing first gas for the ionization chamber, and the second feeding assembly comprises a metal source located in the ionization chamber. The first gas reacts with the metal source in the ionization chamber to generate second gas, the cathode assembly is located in the ionization chamber and used for emitting electrons, the second gas generates plasma through electron ionization, the metal source can be aluminum powder, and the first gas can be chlorine. The reaction temperature of the first gas and the metal source is high, so that the adverse effect of the temperature environment in the ionization chamber on the generation rate of the second gas can be prevented, the generation rate of the second gas can be regulated and controlled by controlling the concentration of the first gas in the ionization chamber, and the stability of the generated ion beam is improved.

Description

Technical Field

[0001] The present application relates to the technical field of ion implantation, and in particular to an ion beam generating device. Background Art

[0002] With the advancement of semiconductor technology and the increasing demand for electronic products, there is a growing demand for metal ion implantation products. For example, aluminum implantation products are widely used in the power device market. In the field of ion implantation, a cathode is used to generate a plasma from a feed gas within the arc chamber of an ion source. This plasma is then used to sputter the material to produce the desired ion species within the ion beam.

[0003] In the prior art, a metal-containing material is placed in the arc chamber. For aluminum, the metal-containing material may include aluminum fluoride or aluminum nitride, which can withstand the plasma chamber temperature of approximately 800°C. The plasma generated by ionized fluoride gas is used to erode the aluminum-containing material, releasing aluminum ions into the plasma. Currently, there are three main methods for generating aluminum ion beams: the first is to heat the crucible with a heating wire to vaporize the aluminum chloride powder in the crucible, which is then ionized to produce aluminum ions after electron bombardment; the second is to react phosphorus fluoride with aluminum in the arc chamber, which is then ionized to produce aluminum ions after electron bombardment; and the third is to react phosphorus fluoride with aluminum nitride in the arc chamber, which is then ionized to produce aluminum ions after electron bombardment.

[0004] However, in the above-mentioned method of generating aluminum ions, due to the high temperature of the arc chamber, the evaporation of aluminum chloride powder is too high, resulting in the evaporation rate of aluminum chloride being difficult to control, resulting in poor stability of the generated aluminum ion beam; the fluoride ions generated by ionization can react with tungsten in the filament, which will reduce the service life of the filament.

[0005] Based on the above technical problems, the present application provides an ion beam generating device for improving the stability of the aluminum ion beam and ensuring that the service life of the filament is not affected. Utility Model Content

[0006] The purpose of this application is to provide an ion beam generating device to solve the problems of poor stability of aluminum ion beams in the prior art, and to improve the stability of the generated aluminum ion beam and the service life of the filament.

[0007] To achieve the above objectives and other related objectives, the present application provides an ion beam generating device, comprising:

[0008] Ionization chamber, which serves as a container for generating plasma;

[0009] a first supply assembly, located outside the ionization chamber and in communication with the ionization chamber, to provide a first gas to the ionization chamber;

[0010] a second feed assembly comprising a metal source located within the ionization chamber, wherein the first gas reacts with the metal source within the ionization chamber to generate a second gas;

[0011] The cathode assembly is located in the ionization chamber and is used to emit electrons. The second gas is ionized by the electrons to generate plasma.

[0012] Optionally, the second feeding assembly further includes a carrier plate, the metal source is aluminum powder, and the aluminum powder is placed on the carrier plate.

[0013] Optionally, the cathode assembly includes a first power supply and a filament, wherein the first power supply is electrically connected to the filament and is used to heat the filament to emit electrons.

[0014] Optionally, the cathode assembly further includes a cathode cover and a second power supply, wherein the cathode cover is disposed on the periphery of the filament and is electrically connected to the second power supply.

[0015] Optionally, an outlet is provided at the top of the ionization chamber for leading out the plasma generated in the ionization chamber.

[0016] Optionally, the ion beam generating device further comprises an extraction component for extracting the plasma in the ionization chamber;

[0017] The extraction component includes a third power supply and an extraction electrode. The third power supply is electrically connected to the extraction electrode. The extraction electrode is located outside the ionization chamber at the extraction outlet.

[0018] Optionally, the ion beam generating device further comprises a repeller assembly located on a side of the ionization chamber opposite to the cathode assembly;

[0019] The reflector assembly includes a reflective electrode and a reflective insulator. The reflective insulator is connected to the ionization chamber. The reflective electrode is insulated from the ionization chamber by the reflective insulator.

[0020] Optionally, the first supply assembly includes a gas transmission tube and a gas source, and the gas source is connected to the ionization chamber through the gas transmission tube to transmit the first gas provided by the gas source to the ionization chamber; wherein the first gas is chlorine.

[0021] Optionally, the first feeding assembly further includes a flow controller, which is connected to the gas transmission pipe and is used to control the flow of the gas transmission pipe.

[0022] Optionally, the ion beam generating device further comprises a magnetic field assembly for generating a magnetic field in the ionization chamber, wherein the magnetic field assembly comprises a plurality of magnets installed outside the ionization chamber.

[0023] As described above, the ion beam generating device provided by the present application has at least the following beneficial effects:

[0024] The ion beam generating device of this embodiment, in a first aspect, the first feeding assembly can provide a first gas to the ionization chamber, the second feeding assembly includes a metal source arranged in the ionization chamber, the gold source can react with the first gas to generate a second gas, the cathode assembly can emit electrons, and the electrons bombard the second gas to ionize and generate plasma. The temperature of the reaction between the first gas and the metal source is relatively high, which can avoid the adverse effect of heat release of the cathode assembly on the generation of the second gas, thereby improving the stability of the emitted ion beam.

[0025] Secondly, a flow controller is provided in the first feeding assembly, which can adjust the flow rate of the first gas to adjust the concentration of the first gas in the ionization chamber, and then adjust the generation rate of the second gas to regulate the concentration of the second gas in the ionization chamber, thereby realizing the regulation of the plasma concentration and effectively enhancing the stability of the ion beam.

[0026] Thirdly, the first gas can be set to chlorine. The chloride ions generated by ionization in the ionization chamber will not corrode the cathode assembly and affect the use of the filament, thereby increasing the service life of the filament.

[0027] Therefore, the ion beam generating device of this embodiment can effectively extend the service life of the filament and output a more stable ion beam flow compared to the prior art, thereby improving the working stability of the device. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following is a brief introduction to the drawings required for use in the embodiments. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other relevant drawings can be obtained based on these drawings without creative work.

[0029] Figure 1 Shown is a schematic structural diagram of the ion beam generating device provided by this application.

[0030] Figure 2 Shown is a schematic structural diagram of an ion beam generating device with a carrier provided in a specific embodiment of the present application.

[0031] Figure 3 Shown is a schematic structural diagram of an ion beam generating device with a repeller assembly provided in a specific embodiment of the present application.

[0032] Figure 4Shown is a schematic structural diagram of an ion beam generating device with an extraction component provided in a specific embodiment of the present application.

[0033] Figure 5 Shown is a schematic structural diagram of an ion beam generating device with a magnetic field component provided in a specific embodiment of the present application.

[0034] Reference numerals:

[0035] 10. Ionization chamber; 101. Lead-out port; 11. First feed assembly; 111. Gas transfer tube; 112. Gas source; 113. Flow controller; 12. Second feed assembly; 121. Carrier plate; 13. Cathode assembly; 131. Filament; 132. First power supply; 133. Cathode cover; 134. Second power supply; 14. Lead-out assembly; 141. Lead-out electrode; 142. Third power supply; 15. Reflector assembly; 151. Reflecting electrode; 152. Reflecting insulator; 16. Magnetic field assembly; 161. Magnet. DETAILED DESCRIPTION

[0036] To make the technical objectives, technical solutions, and technical effects of this application more clear, the technical solutions of this application will be clearly and completely described below in conjunction with embodiments. Obviously, the described embodiments are only part of the embodiments of this application, not all of them. Generally, the components of the embodiments of this application described and shown in the drawings herein can be arranged and designed in various different configurations.

[0037] Therefore, the following detailed description of the embodiments of the present application is not intended to limit the scope of the claimed application, but rather merely represents selected embodiments of the present application. All other embodiments obtained by persons of ordinary skill in the art based on the embodiments in this application without creative effort are within the scope of protection of this application. In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood to indicate or imply relative importance.

[0038] In the description of this application, it should be noted that the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on this application.

[0039] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "installed", "connected" and "connected" should be understood in a broad sense. For example, it can be a fixed connection or a detachable connection. In addition, the description with reference to the terms "one embodiment", "some embodiments", "illustrative embodiments", "example", "specific example" or "some examples" means that the specific features, structures, materials or characteristics described in combination with the implementation or example are included in at least one implementation or example of this application. In this specification, the schematic representation of the above terms does not necessarily refer to the same implementation or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more implementations or examples in a suitable scheme.

[0040] This embodiment provides an ion beam generating device for generating an ion beam of a specific material, which can improve the stability of the generated ion beam. Figure 1 The ion beam generating device of this embodiment includes an ionization chamber 10 , a first feeding assembly 11 , a second feeding assembly 12 and a cathode assembly 13 .

[0041] The ionization chamber 10 is used as a container for generating plasma in the ion beam generating device, and is used to provide a reaction site for the reaction process of generating plasma. The first feeding assembly 11 is located outside the ionization chamber 10 and is connected to the ionization chamber 10, and is used to provide a first gas to the ionization chamber 10. The first gas is the working gas of the ion beam generating device. Optionally, the first gas is chlorine. The second feeding assembly 12 includes a metal source, which is placed in the ionization chamber 10. The first gas can react with the metal source to produce a second gas. Optionally, the metal source is aluminum powder. Under the specific environment of the ionization chamber 10, chlorine can react with aluminum powder and generate a gaseous second gas. The cathode assembly 13 is located in the ionization chamber 10 and is used to emit electrons. Optionally, the cathode assembly 13 is connected to the inner wall of the ionization chamber 10 and is insulated from the inner wall of the ionization chamber 10. The cathode assembly 13 can emit thermal electrons, and the second gas is ionized under the bombardment of the electrons to generate plasma.

[0042] Compared to the prior art, the evaporation rate of aluminum chloride powder is difficult to control, resulting in poor stability of the aluminum ion beam, or the fluorine ions generated by ionization may affect the service life of the filament. The ion beam generating device provided in this embodiment utilizes a first gas to react with a metal source to generate a second gas. The reaction temperature of the first gas and the metal source is relatively high, which can effectively prevent the temperature environment of the ionization chamber 10 from adversely affecting the reaction process of the first gas and the metal source, thereby improving the stability of the emitted ion beam. In addition, by controlling the concentration of the first gas, the reaction rate between the first gas and the metal source is controlled, thereby controlling the concentration of the second gas in the ionization chamber 10. By controlling the concentration of the second gas, the concentration of the target metal plasma generated in the ionization chamber 10 can be regulated, further improving the stability of the emitted ion beam.

[0043] In an alternative embodiment, reference Figure 2 The second feed assembly 12 further includes a carrier tray 121, which is placed within the ionization chamber 10 and on which the metal source is placed. There may be one or more carrier trays 121. The metal source is scattered across the carrier trays 121, which allows for a larger contact area between the metal source and the first gas, thereby increasing the reaction rate. Optionally, multiple carrier trays 121 are spaced apart at the bottom of the ionization chamber 10, and in a top view of the ionization chamber 10, the multiple carrier trays 121 are staggered. This can improve the uniformity of the second gas generated by the reaction within the ionization chamber 10, thereby enhancing the stability of the resulting ion beam.

[0044] In this embodiment, refer to Figure 3 The cathode assembly 13 includes a first power supply 132 and a filament 131. The first power supply 132 and the filament 131 are electrically connected. The first power supply 132 is used to heat the filament 131 so that the filament 131 emits electrons. The cathode assembly 13 is electrically insulated from the ionization chamber 10. Optionally, the first power supply 132 is connected to both ends of the filament 131 and is located outside the ionization chamber 10, and the filament 131 is disposed on one side of the ionization chamber 10.

[0045] In an optional embodiment, the cathode assembly 13 further includes a cathode cover 133 and a second power supply 134. The cathode cover 133 is disposed around the periphery of the filament 131 and is electrically connected to the second power supply 134, so that the cathode cover 133 serves as a positive electrode between the cathode cover 133 and the filament 131. Optionally, the second power supply 134 is connected to the filament 131 and the cathode cover 133, respectively, to apply a bias voltage between the filament 131 and the cathode cover 133, so that the cathode cover 133 serves as a positive electrode, thereby facilitating the emission of thermal electrons emitted by the filament 131.

[0046] In this embodiment, refer to Figure 4An outlet 101 is provided on the wall of the ionization chamber 10 for extracting the plasma generated in the ionization chamber 10 to form an ion beam. The outlet 101 can be provided at the top, bottom or side wall of the ionization chamber 10. Optionally, the outlet 101 is provided at the top of the ionization chamber 10.

[0047] In an optional embodiment, the ion beam generating apparatus further includes an extraction assembly 14, which is disposed at the extraction port 101 and is configured to extract the plasma within the ionization chamber 10 to form an ion beam. Optionally, the extraction assembly 14 includes an extraction electrode 141 and a third power supply 142. The third power supply 142 is electrically connected to the extraction electrode 141 and is configured to apply a voltage to the extraction electrode 141. The extraction electrode 141 is disposed near the extraction port 101 and is located outside the ionization chamber 10. Furthermore, the number of extraction electrodes 141 can be one or more, for example, 3 to 7. By applying voltage to each of the plurality of extraction electrodes 141 using the third power supply 142, the ion beam can be stably extracted from the ionization chamber 10 and a certain degree of divergence or emittance can be ensured by adjusting the voltage of each extraction electrode 141.

[0048] In this embodiment, refer to Figure 3 and Figure 4 The ion beam generating apparatus further includes a repeller assembly 15, which is located within the ionization chamber 10 and on a side opposite the cathode assembly 13. The repeller assembly 15 is configured to reflect electrons, thereby increasing the probability of electron collision with the gas and thereby increasing the ion beam current. Optionally, the repeller assembly 15 includes a reflective electrode 151 and a reflective insulator 152. The reflective insulator 152 is connected to the ionization chamber 10, and the reflective electrode 151 is insulated from the ionization chamber 10 by the reflective insulator 152. Furthermore, the reflective electrode 151 can be made of a material containing molybdenum or tantalum, and the reflective insulator 152 can be made of an insulating ceramic material. The reflective electrode 151 is fixedly mounted within the ionization chamber 10 via the reflective insulator 152.

[0049] In an alternative embodiment, reference Figure 1 The first feeding assembly 11 includes a gas transmission tube 111 and a gas source 112. The opposite ends of the gas transmission tube 111 are respectively connected to the gas source 112 and the ionization chamber 10. The gas source 112 is used to provide a first gas, and the gas transmission tube 111 is used to transmit the first gas. The gas source 112 is connected to the ionization chamber 10 through the gas transmission tube 111, and then the first gas provided by the gas source 112 is transmitted to the ionization chamber 10. Optionally, the first gas is chlorine.

[0050] Further, refer to Figures 2 to 4The gas supply assembly also includes a flow controller 113, which is connected to the gas transmission tube 111 and is used to control the flow of the gas transmission tube 111 to control the concentration of the first gas in the ionization chamber 10. The concentration of the first gas in the ionization chamber 10 will affect the reaction rate of the first gas and the metal source, thereby affecting the concentration of the second gas in the ionization chamber 10, and thereby affecting the concentration of the generated plasma, thereby achieving effective control of the ion beam and improving the stability of the ion beam flow.

[0051] In this embodiment, refer to Figure 5 The ion beam generating apparatus further includes a magnetic field assembly 16 for generating a magnetic field within the ionization chamber 10 to cause electrons within the ionization chamber 10 to move back and forth between the cathode assembly 13 and the repeller assembly 15. Optionally, the magnetic field assembly 16 includes a plurality of magnets 161 mounted outside the ionization chamber 10 to form a magnetic field within the ionization chamber 10. Furthermore, the magnetic field assembly 16 includes a plurality of magnets 161, which may be electromagnets 161 or permanent magnets 161. The plurality of magnets 161 are spaced apart outside the ionization chamber 10 to generate a magnetic field in the ionization chamber 10 in a direction from the cathode assembly 13 to the repeller assembly 15.

[0052] During use, the filament 131 of the cathode assembly 13 is heated to generate electrons, and a high-temperature environment can be formed in the ionization chamber 10 through the cathode assembly 13. The high-temperature environment will enhance the corrosive effect of chlorine on the metallic aluminum powder. The introduced chlorine reacts with the aluminum powder to generate gaseous aluminum chloride. The electrons generated by the cathode assembly 13 bombard the aluminum chloride gas to ionize and generate aluminum ions. The aluminum ions in the ionization chamber 10 are drawn out of the ionization chamber 10 under the action of the extraction assembly 14, forming an aluminum ion beam.

[0053] As described above, the ion beam generating device provided in this embodiment uses a first feeding assembly 11 to provide a first gas to the ionization chamber 10, and uses a second feeding assembly 12 to provide a metal source to the ionization chamber 10. The first gas reacts with the metal source to generate a second gas, and thermal electrons are emitted through the cathode assembly 13. The thermal electrons bombard the second gas to generate plasma. The temperature of the reaction between the first gas and the metal source is relatively high, which can prevent the heat release of the filament 131 from adversely affecting the generation of the second gas, thereby improving the stability of the ion beam; the first gas is set to chlorine, and the chloride ions generated by ionization in the ionization chamber 10 will not corrode the filament 131 and thus affect the use of the filament 131, thereby improving the life of the filament 131; the second feeding assembly 12 includes a flow controller 113, which can control the flow rate of the first gas to adjust the concentration of the first gas in the ionization chamber 10, thereby controlling the reaction rate of the first gas and the metal source to adjust the concentration of the second gas in the ionization chamber 10, thereby achieving control of the ion beam, improving the stability of the extracted ion beam, and obtaining a relatively stable aluminum ion beam flow. Therefore, the ion beam generating device provided in this embodiment can extend the service life of the filament 131 and output a more stable aluminum ion beam compared to the prior art, thereby improving the working stability of the device.

[0054] The above embodiments are merely illustrative of the principles and effects of this application and are not intended to limit this application. Anyone skilled in the art may modify, alter, or combine the above embodiments without departing from the spirit and scope of this application. Therefore, all equivalent modifications or variations accomplished by a person of ordinary skill in the art without departing from the spirit and technical concepts disclosed in this application shall be covered by the claims of this application.

Claims

1. An ion beam generating device, characterized in that: include: Ionization chamber, which serves as a container for generating plasma; a first supply assembly, located outside the ionization chamber and in communication with the ionization chamber, to provide a first gas to the ionization chamber; a second feed assembly comprising a metal source located within the ionization chamber, wherein the first gas reacts with the metal source within the ionization chamber to generate a second gas; The cathode assembly is located in the ionization chamber and is used to emit electrons. The second gas is ionized by the electrons to generate plasma.

2. The ion beam generating device according to claim 1, wherein The second feeding assembly further includes a carrier plate. The metal source is aluminum powder, and the aluminum powder is placed on the carrier plate.

3. The ion beam generating device according to claim 1, wherein The cathode assembly includes a first power supply and a filament. The first power supply is electrically connected to the filament and is used to heat the filament to emit electrons.

4. The ion beam generating device according to claim 3, wherein The cathode assembly further includes a cathode cover and a second power supply. The cathode cover is disposed on the outer periphery of the filament and is electrically connected to the second power supply.

5. The ion beam generating device according to claim 1, wherein The top of the ionization chamber is provided with an outlet for leading out the plasma generated in the ionization chamber.

6. The ion beam generating device according to claim 5, characterized in that Also included is an extraction component for extracting the plasma from the ionization chamber; The extraction component includes a third power supply and an extraction electrode. The third power supply is electrically connected to the extraction electrode. The extraction electrode is located outside the ionization chamber at the extraction outlet.

7. The ion beam generating device according to claim 1, wherein Also included is a repeller assembly located on a side of the ionization chamber opposite to the cathode assembly; The reflector assembly includes a reflective electrode and a reflective insulator. The reflective insulator is connected to the ionization chamber. The reflective electrode is insulated from the ionization chamber by the reflective insulator.

8. The ion beam generating device according to claim 1, wherein The first supply assembly includes a gas transmission tube and a gas source, and the gas source is connected to the ionization chamber through the gas transmission tube to transmit the first gas provided by the gas source to the ionization chamber; wherein the first gas is chlorine.

9. The ion beam generating device according to claim 8, wherein The first feeding assembly further includes a flow controller connected to the gas transmission pipe for controlling the flow of the gas transmission pipe.

10. The ion beam generating device according to claim 1, wherein The device further comprises a magnetic field assembly for generating a magnetic field in the ionization chamber. The magnetic field assembly comprises a plurality of magnets installed outside the ionization chamber.

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