Millimeter wave planar antenna with notch characteristic

Abstract

The utility model discloses a millimeter wave planar antenna with a notch characteristic. The millimeter wave planar antenna comprises a dielectric layer; the radiation layer is located on the first face of the dielectric layer, the radiation layer comprises a radiation body and a microstrip feeder line, and a cross-shaped gap is formed in the center of the radiation body; the radio frequency ground layer is located on the second surface of the dielectric layer, the radio frequency ground layer comprises a metal patch, and an inverted U-shaped gap is formed in the metal patch; the device is simple in structure, has excellent radiation performance, also has the advantage of in-band notch, and can effectively suppress in-band interference.

Description

Technical Field

[0001] The present application relates to the field of antenna technology, and in particular to a millimeter-wave planar antenna with notched-band characteristics. Background Art

[0002] Millimeter-wave broadband planar omnidirectional antennas have attracted widespread attention and in-depth research from scholars and engineers within the industry due to their advantages, such as high data transmission rates, low cost, light weight, simple design, and ease of integration with other components. However, currently reported millimeter-wave broadband planar omnidirectional antennas often lack in-band notching and are unable to effectively suppress in-band interference, limiting their use in modern wireless communication terminals. Utility Model Content

[0003] The main purpose of this application is to propose a millimeter-wave planar antenna with notch characteristics, aiming to solve the problem that existing millimeter-wave broadband planar omnidirectional antennas often do not have the defect of in-band notch and cannot effectively suppress in-band interference.

[0004] To achieve the above objectives, the millimeter wave planar antenna with notched wave characteristics proposed in this application includes:

[0005] dielectric layer;

[0006] a radiation layer, the radiation layer being located on the first surface of the dielectric layer, the radiation layer comprising a radiator and a microstrip feeder, wherein a cross gap is provided at the center of the radiator;

[0007] The radio frequency stratum is located on the second surface of the dielectric layer. The radio frequency stratum includes a metal patch. An inverted U-shaped gap is formed on the metal patch.

[0008] Optionally, the inverted U-shaped slot is located at the center of the metal patch, and the inverted U-shaped slot is configured as an inverted U-shaped structure consisting of two first slots and one second slot, and the two first slots are symmetrically distributed about the second slot; this design can introduce controllable notches, and the symmetrical inverted U-shaped slot can simplify the design and ensure the symmetry of the current distribution on the microstrip feeder, so that the antenna has better notch performance.

[0009] Optionally, the first gap length of the inverted U-shaped gap is L S2 The length of the second gap of the inverted U-shaped gap is L S3 , the center frequency of the antenna notch f N The size parameter L of the inverted U-shaped gap S2 、L S3 The relationship between them is:

[0010]

[0011] Among them, ε r is the dielectric constant of the medium, and c is the speed of light in a vacuum.

[0012] Optionally, the first gap length L of the inverted U-shaped gap S2 =2.6mm, the second gap length L of the inverted U-shaped gap S3 =0.1mm, which can ensure that the center of the notch is at 20.6GHz.

[0013] Optionally, the radiator is a hexagonal structure, consisting of a first radiator with a rectangular structure and two second radiators with isosceles triangles, wherein the two second radiators are symmetrically distributed about the first radiator. The symmetrical design enables the antenna to have better omnidirectional radiation performance.

[0014] Optionally, the cross slot is a cross structure composed of two I-shaped slots perpendicular to each other, and the arm lengths of the cross slots are equal, the intersection of the cross slots coincides with the midpoint of the radiator, and one of the I-shaped slots of the cross slot is perpendicular to the first side of the radiator, which can improve the impedance bandwidth of the microstrip feeder.

[0015] Optionally, the microstrip feed line is located on one side of the radiator, the microstrip feed line is perpendicular to the first side of the radiator, one end of the microstrip feed line is connected to the first side of the radiator, and the other end of the microstrip feed line is aligned with one side of the dielectric layer.

[0016] Optionally, the microstrip feed line is a 50-ohm microstrip feed line.

[0017] Optionally, the metal patch is a rectangular structure made of metal material, and the metal patch is located on the second surface of the dielectric layer close to the microstrip feeder, and three of the sides of the metal patch are aligned with the three sides of the dielectric layer, which can increase the antenna impedance bandwidth.

[0018] Optionally, the dielectric constant of the dielectric layer is 3.38, the dielectric loss of the dielectric layer is 0.0022, and the thickness of the dielectric layer is 0.2 mm.

[0019] The technical solution of the present application is to arrange a radiator and a microstrip feeder in the radiation layer, and arrange a cross gap at the center of the radiator, arrange a metal patch in the radio frequency layer, and arrange an inverted U-shaped gap at the center of the metal patch; the antenna radiation performance is determined by the size parameters of the radiator, the antenna bandwidth and reflection coefficient are jointly determined by the size parameters of the radio frequency layer and the radiator, and the notch center frequency and the isolation at the notch center frequency are determined by the size parameters of the inverted U-shaped gap; the device has a simple structure and excellent radiation performance, and also has the advantage of in-band notch, which can effectively suppress in-band interference. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on the structures shown in these drawings without paying any creative work.

[0021] Figure 1 This is a schematic diagram of the layered structure of the millimeter-wave planar antenna with notched band characteristics of the present application;

[0022] Figure 2 This is one of the front structural schematic diagrams of the millimeter-wave planar antenna with notched band characteristics of the present application;

[0023] Figure 3 This is one of the rear-view structural schematic diagrams of the millimeter-wave planar antenna with notched characteristics of the present application;

[0024] Figure 4 This is the second front view structural diagram of the millimeter wave planar antenna with notched band characteristics of the present application;

[0025] Figure 5 This is the second rear-view structural diagram of the millimeter-wave planar antenna with notched characteristics of the present application;

[0026] Figure 6 The standing wave ratio of the millimeter wave planar antenna with notch characteristics in this application varies with L S2 Schematic diagram of the changes in

[0027] Figure 7 The standing wave ratio of the millimeter wave planar antenna with notch characteristics in this application varies with L S3 Schematic diagram of the changes in

[0028] Figure 8 The standing wave ratio of the millimeter wave planar antenna with notch characteristics in this application varies with W S2 Schematic diagram of the changes in

[0029] Figure 9 Schematic diagram of the simulation results of the standing wave ratio of the millimeter-wave planar antenna with notched characteristics in this application;

[0030] Figure 10 Schematic diagram of the simulation results of the maximum gain and radiation efficiency of the millimeter-wave planar antenna with notched characteristics in this application;

[0031] Figure 11 This is a schematic diagram of the radiation direction of the millimeter-wave planar antenna with notched characteristics at 10.0 GHz in this application;

[0032] Figure 12 This is a schematic diagram of the radiation direction of the millimeter-wave planar antenna with notched characteristics at 18.0 GHz in this application;

[0033] Figure 13 This is a schematic diagram of the radiation direction of the millimeter-wave planar antenna with notch characteristics at 26.0 GHz in this application.

[0034] Description of Figure Numbers:

[0035] 1. Radiating layer; 11. Radiator; 111. First radiator; 112. Second radiator; 113. Cross gap; 114. First side; 12. Microstrip feeder; 2. Dielectric layer; 3. RF ground layer; 31. Metal patch; 311. Inverted U-shaped gap.

[0036] The realization of the objectives, functional features and advantages of this application will be further explained in conjunction with embodiments and with reference to the accompanying drawings. DETAILED DESCRIPTION

[0037] The following will be combined with the drawings in the embodiments of this application to clearly and completely describe the technical solutions in the embodiments of this application. Obviously, the embodiments described are only part of the embodiments of this application, not all of the embodiments. Based on the embodiments of this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0038] It should be noted that when an element is referred to as being “fixed on” or “set on” another component, it can be directly on the other component or indirectly set on the other component; when a component is referred to as being “connected to” another component, it can be directly connected to the other component or indirectly connected to the other component.

[0039] It should be understood that the terms "length", "width", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or component referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore cannot be understood as a limitation on this application.

[0040] In addition, if there are descriptions involving "first", "second", etc. in the embodiments of the present application, the descriptions of "first", "second", etc. are only for descriptive purposes and cannot be understood as indicating or suggesting their relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of such features. In addition, if the meaning of "and / or" appearing in the full text is to include three parallel schemes, taking "A and / or B" as an example, it includes scheme A, or scheme B, or a scheme in which A and B are satisfied at the same time. In addition, the technical solutions between the various embodiments can be combined with each other, but it must be based on the ability of ordinary technicians in this field to implement. When the combination of technical solutions is mutually contradictory or cannot be implemented, it should be deemed that such a combination of technical solutions does not exist and is not within the scope of protection required by this application.

[0041] It should be noted that the structures, proportions, sizes, etc. illustrated in the drawings of this specification are only used to match the contents disclosed in the specification for people familiar with this technology to understand and read, and are not used to limit the conditions under which this application can be implemented. Therefore, they have no substantive technical significance. Any structural modification, change in proportional relationship or adjustment of size should still fall within the scope of the technical content disclosed in this application without affecting the efficacy and purpose that can be achieved by this application.

[0042] Millimeter-wave broadband planar omnidirectional antennas have attracted widespread attention and in-depth research from scholars and engineers within the industry due to their advantages, such as high data transmission rates, low cost, light weight, simple design, and ease of integration with other components. However, currently reported millimeter-wave broadband planar omnidirectional antennas often lack in-band notching and are unable to effectively suppress in-band interference, limiting their use in modern wireless communication terminals.

[0043] In view of this, the present application proposes a millimeter wave planar antenna with notched band characteristics, comprising:

[0044] dielectric layer 2;

[0045] A radiation layer 1, the radiation layer 1 being located on the first surface of the dielectric layer 2, the radiation layer 1 comprising a radiator 11 and a microstrip feed line 12, wherein a cross gap 113 is provided at the center of the radiator 11;

[0046] The radio frequency layer 3 is located on the second surface of the dielectric layer 2 . The radio frequency layer 3 includes a metal patch 31 . An inverted U-shaped gap 311 is formed on the metal patch 31 .

[0047] In the examples of this application, refer to Figures 1 to 5The above-mentioned millimeter-wave planar antenna with notched band characteristics includes a dielectric layer 2, which is a circuit board; a radiation layer 1, which is located on the first surface of the dielectric layer 2, and the radiation layer 1 is composed of a radiator 11 and a microstrip feeder 12, and a cross slot 113 is opened at the center of the radiator 11; a radio frequency layer 3, which is located on the second surface of the dielectric layer 2, and the radio frequency layer 3 is composed of a metal patch 31, and an inverted U-shaped slot 311 is opened on the metal patch 31.

[0048] refer to Figure 1 The first surface and the second surface of the dielectric layer 2 are respectively the front and back surfaces of the dielectric layer 2 .

[0049] refer to Figure 2 The radiator 11 has a hexagonal structure and is specifically composed of a first radiator 111 of a rectangular structure and two second radiators 112 of isosceles triangles, wherein the two second radiators 112 are symmetrically distributed about the first radiator 111 .

[0050] refer to Figure 2 The cross slot 113 is a cross-shaped structure, specifically composed of two straight-line slots perpendicular to each other, and the arm lengths of the cross slot 113 are equal, that is, the distances from the central intersection point of the cross slot 113 to the four outer endpoints are equal, the central intersection point of the cross slot 113 coincides with the midpoint of the radiator 11, and one of the straight-line slots of the cross slot 113 is perpendicular to the first side 114 of the radiator 11.

[0051] refer to Figure 2 The microstrip feed line 12 is a 50-ohm microstrip feed line. The microstrip feed line 12 is located on one side of the radiator 11. The microstrip feed line 12 is perpendicular to the first side 114 of the radiator 11. One end of the microstrip feed line 12 is connected to the first side 114 of the radiator 11, and the other end of the microstrip feed line 12 is aligned with one side of the dielectric layer 2.

[0052] refer to Figure 3 The metal patch 31 is a structure made of rectangular metal material. The metal patch 31 is located on the second surface of the dielectric layer 2 close to the microstrip feed line 12, and three of the sides of the metal patch 31 are aligned with the three sides of the dielectric layer 2. The inverted U-shaped slot 311 is located at the center of the metal patch 31. The inverted U-shaped slot 311 is a U-shaped structure consisting of two vertical first slots and a horizontal second slot, wherein the two first slots are symmetrically distributed about the second slot. This design can introduce controllable notch waves. The symmetry of the inverted U-shaped slot 311 can simplify the design and ensure the symmetry of the current distribution on the microstrip feed line, so that the antenna has better notch wave performance.

[0053] It should be noted that the median of the radiator 11, the median of the microstrip feed line 12, and the median of the metal patch 31 all coincide with the median of the dielectric layer 2; the antenna radiation performance is determined by the size parameters of the radiator 11, the antenna bandwidth and reflection coefficient are jointly determined by the size parameters of the RF ground 3 and the radiator 11, and the notch center frequency and the isolation at the notch center frequency are determined by the size parameters of the inverted U-shaped slot 311.

[0054] To further illustrate the structure of the invention, a design example is provided. In this design example, the dielectric layer has a dielectric constant of 3.38, a dielectric loss of 0.0022, and a thickness of 0.2 mm; the metal layer is copper-plated and has a thickness of 0.035 mm.

[0055] refer to Figure 4 and Figure 5 , where the length of dielectric layer 2 is L A The width of the dielectric layer 2 and the length of the RF layer 3 are W A , the width of the RF layer 3 is L G The length of the first radiator 111 and the length of the bottom side of the second radiator 112 are L P , the width of the first radiator 111 and the distance between the two second radiators 112 is W P The height of the second radiator 112 of the isosceles triangle is H T , the arm length of the cross gap 113 is L S1 , the arm width of the cross gap 113 is W S1 , the first gap length of the inverted U-shaped gap 311 is L S2 The second gap length of the inverted U-shaped gap 311 is L S3 , the length of the microstrip feed line 12 is L F , the width of the microstrip feed line 12 is W F .

[0056] The center frequency of the antenna notch f N The size parameter L of the inverted U-shaped gap S2 , L S3 The relationship between them can be summarized as:

[0057]

[0058] Among them, ε r is the dielectric constant of the medium, and c is the speed of light in a vacuum.

[0059] like Figure 6-Figure 8 , given the size parameter L S2 , L S3 、W S2 The impact on the antenna standing wave ratio is as follows:

[0060] refer to Figure 6 , with the parameter L S2 As the value of becomes larger, the bandwidth of the antenna becomes slightly narrower, the center frequency of the notch moves down, the standing wave ratio at the center frequency of the notch becomes larger, and the notch bandwidth becomes narrower.

[0061] refer to Figure 7 , with the parameter L S3 becomes larger, the bandwidth of the antenna becomes wider, the center frequency of the notch moves slightly downward, the standing wave ratio at the center frequency of the notch becomes larger, and the notch bandwidth becomes wider.

[0062] refer to Figure 8 , with the parameter W S2 As the value of becomes larger, the bandwidth of the antenna becomes slightly wider, the center frequency of the notch moves slightly downward, the standing wave ratio at the center frequency of the notch becomes larger, and the notch bandwidth becomes wider.

[0063] Depend on Figure 6-8 It can be seen that the notch center frequency, the isolation at the notch center frequency, and the notch bandwidth can be independently controlled by the size parameters of the inverted U-shaped slot 311 .

[0064] By optimizing its parameters, we can get a design example: L A =11.5mm, W A =11.0mm, L G =3.7mm, L P =7.0mm, W P =5.0mm, H T =1.95mm, L S1 =2.0mm, W S1 =0.1mm, L S2 =2.6mm, L S3 =0.1mm, W S2 =0.1mm, L F =4.0mm, W F =0.4mm.

[0065] refer to Figure 9 , the reflection coefficient of the planar millimeter wave antenna after parameter optimization is as follows Figure 7 As shown in the figure, the bandwidth range for standing wave ratio less than 2 is 9.3 to 29.9 GHz, the center frequency is 19.6 GHz, the absolute bandwidth is 20.6 GHz, and the relative bandwidth is 105.1%, showing broadband characteristics; in the passband, there are four transmission poles, located at 11.9 GHz, 16.9 GHz, 23.0 GHz, and 25.1 GHz, respectively, ensuring the maximum gain and flatness of radiation efficiency in the passband; there is also a transmission zero at the notch, located at 20.6 GHz, which can effectively suppress the in-band interference at this frequency.

[0066] refer to Figure 10The figure shows the simulation results of the maximum gain and radiation efficiency of the antenna. It can be seen from the figure that within the passband, its average maximum gain is 3.89dBi, showing the advantage of high maximum gain; within the passband, its average radiation efficiency is 96.4%, showing the advantage of high radiation efficiency; there is a notch at 20.6GHz, and the maximum gain at the center frequency of the notch is only -11.6dB, and the radiation efficiency is 20.3%; by comparing the average maximum gain and average radiation efficiency, it can be seen that the antenna has the characteristics of high isolation at the center frequency of the notch.

[0067] refer to Figure 11-13 , which is the radiation pattern of the antenna at 11.0GHz, 18.0GHz and 26GHz, is given by Figure 11-13 It can be seen that the antenna is an omnidirectional antenna.

[0068] The technical solution of the present application is to arrange a radiator and a microstrip feeder in the radiation layer, and arrange a cross gap at the center of the radiator, arrange a metal patch in the radio frequency layer, and arrange an inverted U-shaped gap at the center of the metal patch; the antenna radiation performance is determined by the size parameters of the radiator, the antenna bandwidth and reflection coefficient are jointly determined by the size parameters of the radio frequency layer and the radiator, and the notch center frequency and the isolation at the notch center frequency are determined by the size parameters of the inverted U-shaped gap; the device has a simple structure and excellent radiation performance, and also has the advantage of in-band notch, which can effectively suppress in-band interference.

[0069] The above description is merely an optional embodiment of the present application and does not limit the patent scope of the present application. All equivalent structural transformations made using the contents of the present application specification and drawings under the inventive concept of the present application, or direct / indirect application in other related technical fields are included in the patent protection scope of the present application.

Claims

1. A millimeter wave planar antenna with notched characteristics, characterized in that: include: dielectric layer; a radiation layer, the radiation layer being located on the first surface of the dielectric layer, the radiation layer comprising a radiator and a microstrip feeder, wherein a cross gap is provided at the center of the radiator; The radio frequency stratum is located on the second surface of the dielectric layer. The radio frequency stratum includes a metal patch. An inverted U-shaped gap is formed on the metal patch.

2. The millimeter wave planar antenna with notched wave characteristics according to claim 1, wherein: The inverted U-shaped gap is located at the center of the metal patch. The inverted U-shaped gap is configured as an inverted U-shaped structure consisting of two first gaps and one second gap. The two first gaps are symmetrically distributed about the second gap.

3. The millimeter wave planar antenna with notched wave characteristics according to claim 2, wherein: The first gap length of the inverted U-shaped gap is L S2 The length of the second gap of the inverted U-shaped gap is L S3 , the center frequency of the antenna notch f N The size parameter L of the inverted U-shaped gap S2 、L S3 The relationship between them is: Among them, ε r is the dielectric constant of the medium, and c is the speed of light in a vacuum.

4. The millimeter wave planar antenna with notched band characteristics according to claim 3, wherein: The first gap length L of the inverted U-shaped gap S2 =2.6mm, the second gap length L of the inverted U-shaped gap S3 =0.1mm.

5. The millimeter wave planar antenna with notched wave characteristics according to claim 1, wherein: The radiator is a hexagonal structure, and is composed of a first radiator with a rectangular structure and two second radiators with isosceles triangles, wherein the two second radiators are symmetrically distributed with respect to the first radiator.

6. The millimeter wave planar antenna with notched wave characteristics according to claim 1, wherein: The cross slot is a cross structure composed of two straight-line slots perpendicular to each other, and the arm lengths of the cross slots are equal, the intersection of the cross slots coincides with the midpoint of the radiator, and one of the straight-line slots of the cross slots is perpendicular to the first side of the radiator.

7. The millimeter wave planar antenna with notched wave characteristics according to claim 1, wherein: The microstrip feed line is located on one side of the radiator, the microstrip feed line is perpendicular to the first side of the radiator, one end of the microstrip feed line is connected to the first side of the radiator, and the other end of the microstrip feed line is aligned with one side of the dielectric layer.

8. The millimeter wave planar antenna with notched band characteristics according to claim 7, wherein: The microstrip feed line is a 50-ohm microstrip feed line.

9. The millimeter wave planar antenna with notched wave characteristics according to claim 7, wherein: The radio frequency ground layer is a rectangular metal patch made of metal material. The metal patch is located on the second surface of the dielectric layer close to the microstrip feeder, and three sides of the metal patch are aligned with the three sides of the dielectric layer.

10. The millimeter wave planar antenna with notched wave characteristics according to claim 1, wherein: The dielectric constant of the dielectric layer is 3.38, the dielectric loss of the dielectric layer is 0.0022, and the thickness of the dielectric layer is 0.2 mm.

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