Photoelectric packaging structure

Abstract

According to the photoelectric packaging structure provided by the utility model, the glass waveguide layer structure is constructed by combining the glass complex with the protective layer, the first groove and the second groove for exposing the glass waveguide layer are formed, the optical lens is arranged in the first groove, and the optical connector is connected in the second groove. And the optical signal port of the optical chip and the optical lens are correspondingly arranged, so that the optical connection between the optical lens and the glass waveguide layer and the optical connection between the optical connector and the glass waveguide layer are realized, thereby forming an optical transmission path, and photoelectric interconnection can be realized through the electric chip, the rewiring and the metal column. Therefore, efficient and accurate transmission of photoelectric signals is ensured, the packaging size is reduced, the power consumption is reduced, the reliability is improved, the device is suitable for high-density integrated packaging, and good photoelectric transmission can be realized.

Description

TECHNICAL FIELD

[0001] The utility model belongs to the chip packaging field relates to a photoelectric packaging structure. BACKGROUND

[0002] With the continuous increase of microprocessor performance, the maximum available data communication rate of electronic interconnects for streaming data into and out of microprocessors becomes an increasingly dominant bottleneck; due to the physical limitations of traditional electronic interconnects, such as signal attenuation, electromagnetic interference, thermal loss, etc., which are the bottlenecks limiting system performance, the overall system performance is also limited.

[0003] The technology of integrating optical interconnects with electronic interconnects can solve this bottleneck problem. Optical interconnect technology uses optical waveguides instead of traditional electronic connection lines to transmit data, which can provide higher bandwidth and lower signal loss, thereby overcoming the limitations of electronic interconnects. The most important advantage of optical interconnects is higher bandwidth-length product (i.e. higher relative bandwidth multiplied by length measured in bandwidth) and higher density. In addition, optical interconnects can also save cost and power. In addition to these advantages, optical interconnects also provide the possibility of embedding optical alignment solutions directly in the interconnect itself to ensure that optical signals can be transmitted more accurately between optoelectronic chips.

[0004] Therefore, it is necessary to provide a photoelectric packaging structure to improve the accuracy and reliability of the optoelectronic integrated system.

[0005] It should be noted that the above introduction to the technical background is only for the convenience of clearly and completely describing the technical scheme of the present application and for the convenience of understanding by those skilled in the art. The above technical scheme cannot be considered as known to those skilled in the art just because it is described in the background section of the present application. CONTENT OF THE UTILITY MODEL

[0006] In view of the above-mentioned shortcomings of the prior art, the purpose of the present utility model is to provide a photoelectric packaging structure to solve the problem of how to improve the accuracy and reliability of the optoelectronic integrated system in the prior art.

[0007] To achieve the above-mentioned purpose and other related purposes, the present utility model provides a photoelectric packaging structure, which comprises:

[0008] A first re-wiring layer having a first face and a second face arranged opposite to each other;

[0009] a glass composite disposed on a first surface of the first redistribution layer, comprising a glass substrate and a patterned glass waveguide layer, wherein the glass waveguide layer partially exposes the glass substrate and has a first end and a second end opposite to each other, and a refractive index of the glass waveguide layer is greater than a refractive index of the glass substrate;

[0010] a protective layer, the protective layer being located on a surface of the glass composite and covering the glass waveguide layer, the refractive index of the protective layer being lower than the refractive index of the glass waveguide layer;

[0011] a metal column, the metal column penetrating the glass substrate and the protective layer, the metal column having a first end and a second end opposite to each other, the second end of the metal column being electrically connected to the first rewiring layer;

[0012] a second redistribution layer, the second redistribution layer being located on the protection layer and electrically connected to the first end of the metal pillar;

[0013] a first groove, wherein the first groove penetrates the second redistribution layer and the protective layer and exposes a portion of the glass waveguide layer adjacent to the first end of the glass waveguide layer;

[0014] a second groove, wherein the second groove penetrates the second redistribution layer and the protective layer and exposes a portion of the glass waveguide layer adjacent to the second end of the glass waveguide layer;

[0015] an optical lens, the optical lens being located in the first groove and optically connected to the glass waveguide layer;

[0016] an optical connector, the optical connector being located in the second groove and optically connected to the glass waveguide layer;

[0017] an optical chip, the optical chip being located on the second rewiring layer and electrically connected to the second rewiring layer, the optical chip comprising an optical signal port, and the optical signal port being arranged corresponding to the optical lens;

[0018] An electrical chip is located on the second redistribution layer and is electrically connected to the second redistribution layer.

[0019] Optionally, the optoelectronic packaging structure further includes an optical port isolator located between the second rewiring layer and the optical chip, and the first groove is isolated from the outside by the optical port isolator.

[0020] Optionally, the optical lens is located on the glass waveguide layer, and the vertical projection of the optical signal port covers the optical lens and the photosensitive area.

[0021] Optionally, the optoelectronic packaging structure further includes a metal bump, wherein the metal bump is located on the second surface of the first redistribution layer and is electrically connected to the first redistribution layer.

[0022] Optionally, each of the electrical chips corresponds to four of the optical chips, and the optical chips are distributed in four directions of the same plane, and each of the optical chips corresponds to one of the optical connectors.

[0023] Optionally, the protective layer includes a polyimide protective layer or a silicon oxide protective layer.

[0024] Optionally, the glass composite comprises a fusion-drawn glass composite.

[0025] Optionally, the optical lens includes a single optical lens or an optical lens array consisting of a plurality of optical lenses.

[0026] Optionally, a bottom filling layer is provided between the optical chip and the second redistribution layer, and between the electrical chip and the second redistribution layer.

[0027] Optionally, the optical chip includes one of a laser, an oscillator, and a light emitting diode.

[0028] As described above, the present invention provides an optoelectronic packaging structure, which uses a glass composite combined with a protective layer to construct a glass waveguide layer structure. By forming a first groove and a second groove that expose the glass waveguide layer, disposing an optical lens in the first groove and connecting an optical connector in the second groove, and arranging the optical signal port of the optical chip corresponding to the optical lens, an optical connection is achieved between the optical lens and the glass waveguide layer, and between the optical connector and the glass waveguide layer, thereby forming an optical transmission path. Optoelectronic interconnection can be achieved through electrical chips, rewiring, and metal columns, thereby ensuring efficient and accurate transmission of optoelectronic signals, reducing package size, reducing power consumption, and improving reliability. The structure is suitable for high-density integrated packaging and can achieve good optoelectronic transmission. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 Shown is a schematic diagram of the process flow for preparing an optoelectronic packaging structure in an embodiment of the present invention.

[0030] Figure 2 It is a schematic structural diagram of the glass composite body in an embodiment of the present invention.

[0031] Figure 3 It is a schematic structural diagram showing the structure after forming a patterned photoresist layer in an embodiment of the present invention.

[0032] Figure 4 It is a schematic structural diagram showing the structure after forming a patterned glass waveguide layer in an embodiment of the present invention.

[0033] Figure 5 Shown are structural schematic diagrams of glass waveguide layers with different structural morphologies in embodiments of the present invention.

[0034] Figure 6 It is a schematic diagram of the structure after the protective layer is formed in the embodiment of the present invention.

[0035] Figure 7 It is a schematic diagram of the structure after the metal pillars are formed in the embodiment of the present invention.

[0036] Figure 8 It is a schematic structural diagram after forming the first redistribution layer and the second redistribution layer in an embodiment of the present invention.

[0037] Figure 9 It is a schematic diagram of the structure after the first groove and the second groove are formed in an embodiment of the present invention.

[0038] Figure 10 It is a schematic diagram of the structure after the metal bumps are formed in the embodiment of the present invention.

[0039] Figure 11 Shown is a schematic structural diagram of the embodiment of the present invention after the optical components are bonded.

[0040] Figure 12 Shown is a schematic diagram of the structure after bonding the electrical chip in an embodiment of the present invention.

[0041] Figure 13 Shown is a schematic diagram of the structure after bonding the optical chip in an embodiment of the present invention.

[0042] Figure 14 It is a schematic diagram of the structure after the bottom filling layer is formed in the embodiment of the present invention.

[0043] Figure 15 It is a schematic structural diagram of an optical connection device formed in an embodiment of the present invention.

[0044] Figure 16 It is a schematic diagram showing the structure of the optoelectronic packaging structure in a top view according to an embodiment of the present invention.

[0045] Description of Reference Numerals

[0046] 100 glass substrate

[0047] 110 Glass Complex

[0048] 200 Glass waveguide layer

[0049] 210 photoresist layer

[0050] 220 Optical Connectors

[0051] 300 protective layers

[0052] 400 Metal Columns

[0053] 500 First rewiring layer

[0054] 510 metal bumps

[0055] 600 Second rewiring layer

[0056] 700 First Groove

[0057] 701 Second Groove

[0058] 702 optical port isolation element

[0059] 703 optical signal port

[0060] 704 optical lens

[0061] 800 optical chips

[0062] 801 Photosensitive Area

[0063] 900 electronic chips

[0064] 910 bottom fill layer DETAILED DESCRIPTION

[0065] The following describes the embodiments of the present invention through specific examples. Those skilled in the art will readily understand the other advantages and benefits of the present invention from the disclosure herein. The present invention may also be implemented or applied through various other specific embodiments, and the details in this specification may be modified or altered based on different perspectives and applications without departing from the spirit of the present invention.

[0066] It should be noted that the illustrations provided in this embodiment are only used to schematically illustrate the basic concept of the present invention. Therefore, the illustrations only show components related to the present invention and are not drawn according to the number, shape and size of components in actual implementation. In actual implementation, the type, quantity and proportion of each component can be changed at will, and the component layout type may also be more complicated.

[0067] The following will be combined with the drawings in the embodiments of this application to clearly and completely describe the technical solutions in the embodiments of this application. Obviously, the embodiments described are part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0068] Embodiment one

[0069] Referring to Figure 1 , the embodiment provides a manufacturing method of an optoelectronic packaging structure.

[0070] Firstly, referring to Figure 1 and Figure 2 , a step S1 is performed to provide a glass composite 110, which comprises a glass substrate 100 and a glass waveguide layer 200, the glass substrate 100 has oppositely arranged first and second surfaces, and the glass waveguide layer 200 has a refractive index greater than that of the glass substrate 100.

[0071] As an example, the manufacturing method of the glass composite 110 can comprise a fusion draw lamination method, but is not limited thereto. In the embodiment, the glass composite 110 is manufactured by the fusion draw lamination method, and the glass waveguide layer 200 located in the upper layer has a refractive index greater than that of the glass substrate 100 located in the lower layer, so as to facilitate subsequent construction of a glass waveguide structure.

[0072] When the glass composite 110 is manufactured by the fusion draw lamination method, the refractive index difference between the glass waveguide layer 200 and the glass substrate 100 is preferably 5% to 10%, such as a refractive index difference of 5%, 6%, 8%, 10%, etc., so that the glass substrate 100 can serve as a lower cladding layer of the glass waveguide layer 200, thereby facilitating subsequent preparation of a glass waveguide structure with good transmission performance.

[0073] As an example, the glass composite 110 can be a wafer-level size.

[0074] Next, referring to Figure 1 , Figure 3 and Figure 4 , a step S2 is performed to pattern the glass waveguide layer 200, and part of the glass substrate 100 is exposed, the glass waveguide layer 200 has oppositely arranged first and second ends.

[0075] Specifically, referring to Figure 3 , a patterned photoresist layer 210 can be formed by coating a photoresist on the glass waveguide layer 200, selecting a mask with a desired pattern, and then performing exposure and development steps. Then, based on the photoresist layer 210, the glass waveguide layer 200 is etched, and the excess photoresist layer 210 is removed, thereby preparing the patterned glass waveguide layer 200.

[0076] The topography of the glass waveguide layer 200 can be referred to Figure 5 , wherein Figure 5Schematic diagrams of the structures of the glass waveguide layer 200 with six different morphologies are shown in FIG. The morphologies of the glass waveguide layer 200 are not limited thereto. A desired patterned mask can be selected and set as needed to form the photoresist layer 210 with different morphologies, and the glass waveguide layer 200 with different morphologies can be prepared by etching. The specific morphology of the glass waveguide layer 200 is not excessively limited here.

[0077] The material of the photoresist layer 210 can be positive photoresist or negative photoresist, and the material can be selected according to specific needs and is not limited here.

[0078] Next, see Figure 1 and Figure 6 , executing step S3 , forming a protective layer 300 on the exposed surface of the glass substrate 100 and covering the glass waveguide layer 200 , wherein the refractive index of the protective layer 300 is smaller than the refractive index of the glass waveguide layer 200 .

[0079] Specifically, the protective layer 300 can be made of insulating materials such as polyimide (PI) or silicon oxide to prevent subsequent interference with electrical transmission. Furthermore, when selecting the material for the protective layer 300, the refractive index of the selected material must be considered to ensure that the protective layer 300 can serve as the upper cladding layer of the glass waveguide layer 200.

[0080] Next, see Figure 1 and Figure 7 , performing step S4 to form a metal column 400 penetrating the protective layer 300 and the glass substrate 100, wherein the metal column 400 has a first end and a second end that are oppositely disposed.

[0081] Next, see Figure 1 and Figure 8 , execute step S5, form a second redistribution layer 600 on the protective layer 300 and form a first redistribution layer 500 on the second surface of the glass substrate 100, the first redistribution layer 500 has a first surface arranged opposite to each other and a second surface connected to the glass substrate 100; the second end of the metal column 400 is electrically connected to the first redistribution layer 500, and the first end of the metal column 400 is electrically connected to the second redistribution layer 600.

[0082] Next, see Figure 1 and Figure 9, execute step S6 to form a first groove 700 and a second groove 701 through the second re-wiring layer 600, the protective layer 300, the first groove 700 through the second re-wiring layer 600 and the protective layer 300, and exposing part of the glass waveguide layer 200 adjacent to the first end of the glass waveguide layer 200; the second groove 701 through the second re-wiring layer 600 and the protective layer 300, and exposing part of the glass waveguide layer 200 adjacent to the second end of the glass waveguide layer 200.

[0083] Specifically, the method for forming the first groove 700 and the second groove 701 includes laser drilling or dry etching, which can be selected according to needs. For details, please refer to Figure 9 A distribution diagram of the first groove 700 with a rectangular shape is shown. It should be noted that, in order to construct the subsequent light transmission path, the first groove 700 exposes part of the glass waveguide layer 200 adjacent to the first end of the glass waveguide layer 200, and the second groove 701 exposes part of the glass waveguide layer 200 adjacent to the second end of the glass waveguide layer 200.

[0084] Next, referring to Figure 1 and Figure 10 , execute step S7 to form a metal bump 510 on the first surface of the first re-wiring layer 500, and the metal bump 510 is electrically connected with the first re-wiring layer 500. The preparation and material of the metal bump 510 are not limited here.

[0085] Next, referring to Figure 1 and Figure 11 , execute step S8 to provide an optical lens 704, which is located in the first groove 700 and is optically connected with the glass waveguide layer 200.

[0086] Specifically, the optical lens 704 includes a single optical lens or an optical lens array composed of multiple optical lenses.

[0087] Next, referring to Figure 1 and Figure 12 , execute step S9 to bond an optical chip 800 on the surface of the second re-wiring layer 600, the optical chip 800 includes an optical signal port 703, and the optical signal port 703 is arranged correspondingly with the optical lens 704, as shown in Figure 12 , a photosensitive area 801 is formed between the optical chip 800 and the optical lens 704.

[0088] Specifically, the optical chip 800 includes one of a laser, an oscillator, and a light-emitting diode. The optical lens 704 is located on the glass waveguide layer 200, and the optical signal port 703 vertically covers the optical lens 704. Above the optical lens 704, an optical port isolator 702 is located between the second redistribution layer 600 and the optical chip 800. The optical port isolator 702 isolates the first groove 700 from the outside world and prevents subsequent processes from affecting the photosensitive area 801.

[0089] Next, see Figure 1 and Figure 13 , executing step S10, bonding the electrical chip 900 on the surface of the second redistribution layer 600, the electrical chip being electrically connected to the second redistribution layer.

[0090] For details, see Figure 14 A bottom filling layer 910 may also be provided between the optical chip 800 and the second rewiring layer 600, and between the electrical chip 900 and the second rewiring layer 600, so as to cover the gap between the optical chip 800 and the second rewiring layer 600, and the gap between the electrical chip 900 and the second rewiring layer 600 through the bottom filling layer 910.

[0091] Next, see Figure 1 and Figure 15 , executing step S11 , providing an optical connector 220 , wherein the optical connector 220 is located in the second groove 701 and optically connected to the glass waveguide layer 200 .

[0092] Specifically, the electrical chip 900 may include active components configured to operate specifically with electrical signals, such as one or more transistors, voltage converters, transimpedance amplifiers (TIAs), clock and data recovery (CDR) components, microcontrollers, etc. The electrical chip 900 may include multiple functions, such as driving, processing, and clearing signals to and from the optical chip 800, and providing necessary voltages to the optical chip 800. The specific types, quantities, and distribution of the electrical chip 900 and the optical chip 800 are not overly limited herein.

[0093] Furthermore, after the optical chip 800 is bonded to the second rewiring layer 600, the optical chip 800 can be electrically interconnected with the second rewiring layer 600, and the optical signal port 703 of the optical chip 800 corresponds to the optical lens 704. The optical lens 704 forms an optical connection with the glass waveguide layer 200, and the optical connector 200 forms an optical connection with the glass waveguide layer 200, thereby forming an optical transmission path.

[0094] For further information, see Figure 16 Each of the electrical chips 900 corresponds to four of the optical chips 800 , and the optical chips 800 are distributed in four directions of the same plane, and each of the optical chips 800 corresponds to one of the optical connectors 220 .

[0095] Furthermore, when the glass composite 110 is at the wafer level, a cutting process step is further included. The cutting process may include laser cutting or mechanical cutting, which is not limited here.

[0096] Example 2

[0097] See Figures 2 to 16 This embodiment also provides an optoelectronic packaging structure, wherein the optoelectronic packaging structure can be prepared using the above-mentioned preparation process, so that the materials, structures, etc. of the optoelectronic interconnection packaging structure can refer to the above-mentioned content. Of course, according to needs, the optoelectronic packaging structure can also be prepared using other preparation processes. For example, the optical lens 704, the optical connector 220, the optical chip 800 and the electrical chip 900 can be prepared first, and then the bottom filling layer 910 and the metal bump 510 can be prepared.

[0098] In this embodiment, the 3D optoelectronic interconnect packaging structure includes:

[0099] A first rewiring layer 500 , wherein the first rewiring layer 500 has a first surface and a second surface opposite to each other;

[0100] a glass composite 110, the glass composite 110 being located on a first surface of the first redistribution layer 500 and comprising a glass substrate 100 and a patterned glass waveguide layer 200, wherein the glass waveguide layer 200 partially exposes the glass substrate 100 and has a first end and a second end opposite to each other, and a refractive index of the glass waveguide layer 200 being greater than a refractive index of the glass substrate 100;

[0101] a protective layer, the protective layer being located on a surface of the glass composite 110 and covering the glass waveguide layer 200 , wherein the refractive index of the protective layer is lower than the refractive index of the glass waveguide layer 200 ;

[0102] a metal pillar 400 , the metal pillar 400 penetrating the glass substrate 100 and the protective layer, and having a first end and a second end opposite to each other, the second end of the metal pillar 400 being electrically connected to the first re-distribution layer 500 ;

[0103] a second redistribution layer 600 , the second redistribution layer 600 being located on the protection layer and electrically connected to the first end of the metal pillar 400 ;

[0104] a first groove 700 penetrating the second redistribution layer 600 and the protective layer and exposing a portion of the glass waveguide layer 200 adjacent to the first end of the glass waveguide layer 200 ;

[0105] a second groove 701 , wherein the second groove 701 penetrates the second redistribution layer 600 and the protective layer and exposes a portion of the glass waveguide layer 200 adjacent to the second end of the glass waveguide layer 200 ;

[0106] an optical lens 704 , the optical lens 704 being located in the first groove 700 and optically connected to the glass waveguide layer 200 ;

[0107] an optical connector 220 , located in the second groove 701 and optically connected to the glass waveguide layer 200 ;

[0108] an optical chip 800, the optical chip 800 being located on the second rewiring layer 600 and electrically connected to the second rewiring layer 600, the optical chip 800 including an optical signal port 703, and the optical signal port 703 being disposed corresponding to the optical lens 704;

[0109] an electrical chip 900 , the electrical chip 900 being located on the second redistribution layer 600 and electrically connected to the second redistribution layer 600 ;

[0110] As an example, the optoelectronic packaging structure further includes an optical port isolator 702 located between the second rewiring layer 600 and the optical chip 800 , and the first groove 700 is isolated from the outside by the optical port isolator 702 .

[0111] As an example, the optical lens 704 is located on the glass waveguide layer 200 , and the vertical projection of the optical signal port 703 covers the optical lens 704 and the photosensitive area 801 .

[0112] As an example, the optoelectronic package structure further includes a metal bump 510 . The metal bump 510 is located on the second surface of the first redistribution layer 500 and is electrically connected to the first redistribution layer 500 .

[0113] As an example, each of the electrical chips 900 corresponds to four of the optical chips 800 , and the optical chips 800 are distributed in four directions of the same plane, and each of the optical chips 800 corresponds to one of the optical connectors 220 .

[0114] As an example, the protective layer 300 includes a polyimide protective layer or a silicon oxide protective layer.

[0115] Specifically, the material of the protective layer 300 can adopt a material with insulation, such as polyimide (PI) or silicon oxide, to avoid subsequent influence on electrical transmission.

[0116] Further, when selecting the material of the protective layer 300, the refractive index of the selected material also needs to be considered, so that the protective layer 300 can be applied as the upper cladding layer of the glass waveguide layer 200.

[0117] As an example, the glass composite 110 includes a fusion-drawn glass composite.

[0118] As an example, the optical lens 704 includes a single optical lens or an optical lens array composed of multiple optical lenses.

[0119] As an example, the optical chip 800 and the second re-wiring layer 600, and the electrical chip 900 and the second re-wiring layer 600 each have an underfill layer 910 to cover the gap between the optical chip 800 and the second re-wiring layer 600, and cover the gap between the electrical chip 900 and the second re-wiring layer 600 through the underfill layer 910.

[0120] As an example, the optical chip 800 includes one of a laser, an oscillator, and a light-emitting diode.

[0121] In summary, the optical and electrical packaging structure is provided, which adopts a glass composite combined with a protective layer to construct a glass waveguide layer structure, forms a first groove and a second groove exposing the glass waveguide layer, sets an optical lens in the first groove and connects an optical connector in the second groove, and makes the optical signal port of an optical chip correspondingly arranged with the optical lens, so as to realize optical connection between the optical lens and the glass waveguide layer, and between the optical connector and the glass waveguide layer, thereby forming an optical path transmission path, and through an electrical chip, re-wiring, and a metal column, optical and electrical interconnection can be realized, thereby ensuring efficient and accurate transmission of optical and electrical signals, reducing packaging size, reducing power consumption, and improving reliability, which is suitable for high-density integrated packaging and can realize good optical and electrical transmission. Therefore, the utility model effectively overcomes various shortcomings in the prior art and has high industrial utilization value.

[0122] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the present invention. Anyone skilled in the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by one of ordinary skill in the art without departing from the spirit and technical principles disclosed in the present invention are intended to be covered by the claims of the present invention.

Claims

1. An optoelectronic packaging structure, characterized in that: The optoelectronic packaging structure comprises: a first rewiring layer having a first side and a second side opposite to each other; a glass composite disposed on a first surface of the first redistribution layer, comprising a glass substrate and a patterned glass waveguide layer, wherein the glass waveguide layer partially exposes the glass substrate and has a first end and a second end opposite to each other, and a refractive index of the glass waveguide layer is greater than a refractive index of the glass substrate; a protective layer, the protective layer being located on a surface of the glass composite and covering the glass waveguide layer, the refractive index of the protective layer being lower than the refractive index of the glass waveguide layer; a metal column, the metal column penetrating the glass substrate and the protective layer, the metal column having a first end and a second end opposite to each other, the second end of the metal column being electrically connected to the first rewiring layer; a second redistribution layer, the second redistribution layer being located on the protection layer and electrically connected to the first end of the metal pillar; a first groove, wherein the first groove penetrates the second redistribution layer and the protective layer and exposes a portion of the glass waveguide layer adjacent to the first end of the glass waveguide layer; a second groove, wherein the second groove penetrates the second redistribution layer and the protective layer and exposes a portion of the glass waveguide layer adjacent to the second end of the glass waveguide layer; an optical lens, the optical lens being located in the first groove and optically connected to the glass waveguide layer; an optical connector, the optical connector being located in the second groove and optically connected to the glass waveguide layer; an optical chip, the optical chip being located on the second rewiring layer and electrically connected to the second rewiring layer, the optical chip comprising an optical signal port, and the optical signal port being arranged corresponding to the optical lens; An electrical chip is located on the second redistribution layer and is electrically connected to the second redistribution layer.

2. The optoelectronic packaging structure according to claim 1, wherein: The optoelectronic packaging structure further includes an optical port isolator located between the second rewiring layer and the optical chip, and the first groove is isolated from the outside by the optical port isolator.

3. The optoelectronic packaging structure according to claim 1, wherein: The optical lens is located on the glass waveguide layer, and the vertical projection of the optical signal port covers the optical lens and the photosensitive area.

4. The optoelectronic packaging structure according to claim 1, wherein: The optoelectronic packaging structure further includes a metal bump, which is located on the second surface of the first redistribution layer and electrically connected to the first redistribution layer.

5. The optoelectronic packaging structure according to claim 1, wherein: Each of the electrical chips corresponds to four of the optical chips, and the optical chips are distributed in four directions of the same plane, and each of the optical chips corresponds to one of the optical connectors.

6. The optoelectronic packaging structure according to claim 1, wherein: The protective layer includes a polyimide protective layer or a silicon oxide protective layer.

7. The optoelectronic packaging structure according to claim 1, wherein: The glass composite comprises a fusion-drawn glass composite.

8. The optoelectronic packaging structure according to claim 1, wherein: The optical lens includes a single optical lens or an optical lens array composed of a plurality of optical lenses.

9. The optoelectronic packaging structure according to claim 1, wherein: An underfill layer is provided between the optical chip and the second rewiring layer, and between the electrical chip and the second rewiring layer.

10. The optoelectronic packaging structure according to claim 1, wherein: The optical chip includes one of a laser, an oscillator, and a light emitting diode.

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