Room temperature vacuum pressure bonding device

Abstract

The utility model relates to a room temperature vacuum pressure bonding device which comprises a vacuum cavity, the wall surface of the vacuum cavity is respectively provided with a first through hole and a second through hole, the first through hole is connected with a plasma generating assembly, the second through hole is connected with a vacuum generating assembly, and the vacuum generating assembly vacuumizes the interior of the vacuum cavity. Activating the wafer in the vacuum cavity through a plasma generation assembly; an air cylinder is fixed to the outer top wall face of the vacuum cavity, an output guide rod of the air cylinder extends into the vacuum cavity and is connected with the bonding pressing head, an operation table is fixed to the inner bottom wall face of the vacuum cavity, and an operation arm mechanism is installed in the vacuum cavity in a matched mode. By arranging the plasma generating assembly, the plasma beam can be emitted into the vacuum cavity, so that plasma bombardment activation is carried out on the wafer, the wafer can be bonded at the room temperature without heating the wafer, energy consumption is reduced, production time is greatly shortened, and production efficiency is effectively improved.

Description

TECHNICAL FIELD

[0001] The utility model relates to a semiconductor packaging technical field especially a room temperature vacuum pressure bonding device. BACKGROUND

[0002] Wafer bonding technology is an advanced semiconductor manufacturing process, which combines two or more wafers under certain process conditions to form a whole structure through bonding equipment.

[0003] The wafer bonding equipment in the prior art usually realizes the bonding of wafers based on a hot-pressing process, and its structure includes a vacuum cavity, a temperature control system and a clamp. The vacuum cavity is used to provide a vacuum environment, the temperature control system is used to control the environmental temperature inside the vacuum cavity, and the clamp is used to clamp the wafer. In a vacuum environment, the temperature inside the vacuum cavity is heated to the bonding requirement temperature by the temperature control system, and the wafer is clamped by the clamp to apply the bonding force required for bonding, thereby completing the bonding of the wafer. However, since the wafer bonding requirement temperature is usually several hundred degrees Celsius to several thousand degrees Celsius, the energy consumption of this wafer bonding equipment based on the hot-pressing process is high. At the same time, this equipment needs to be heated from room temperature to the bonding requirement temperature before wafer bonding, and needs to be cooled from the bonding requirement temperature to room temperature after wafer bonding, resulting in long production time and low production efficiency. SUMMARY

[0004] In view of the above-mentioned shortcomings of the prior production technology, the present applicant provides a room temperature vacuum pressure bonding device, which can emit a plasma beam into the interior of the vacuum cavity by setting a plasma generating assembly, thereby activating the wafer by plasma bombardment, so that the wafer can be bonded at room temperature without heating the wafer, reducing energy consumption, greatly shortening production time and effectively improving production efficiency.

[0005] The technical solution adopted by the utility model is as follows:

[0006] A room temperature vacuum pressure bonding device, comprising a vacuum cavity, first and second through holes are respectively formed in the wall surface of the vacuum cavity, the first through hole is connected with a plasma generating assembly, and the second through hole is connected with a vacuum generating assembly. The vacuum generating assembly and the plasma generating assembly are arranged outside the vacuum cavity. The interior of the vacuum cavity is vacuumized by the vacuum generating assembly, and the wafer in the interior of the vacuum cavity is activated by the plasma generating assembly.

[0007] A gas cylinder is fixed to the outer top wall surface of the vacuum cavity, the output guide rod of the gas cylinder extends into the interior of the vacuum cavity and is connected with a bonding pressure head, an operating table is fixed to the inner bottom wall surface of the vacuum cavity, the operating table is located directly below the bonding pressure head, and an operating arm mechanism is installed in the interior of the vacuum cavity in cooperation.

[0008] A piece of activated wafer is stacked on top of another piece of activated wafer by the operation arm mechanism to obtain a wafer assembly, the operation arm mechanism carries the wafer assembly to the top of the operation table, the bonding pressure head is driven by the air cylinder to make linear motion in the vertical direction to approach the operation table, so as to apply pressure to the wafer assembly on the top of the operation table.

[0009] As a further improvement of the above technical solution:

[0010] The plasma generating assembly comprises an ion pump, a first connecting pipe is connected to a plasma output port of the ion pump, and the first connecting pipe is connected to the first through hole through a first flange.

[0011] The vacuum generating assembly comprises a molecular pump, a second connecting pipe is connected to an air outlet of the molecular pump, and the second connecting pipe is connected to the second through hole through a second flange.

[0012] A supporting base is installed at the bottom of the molecular pump.

[0013] A plurality of third through holes are formed in the bottom wall surface of the vacuum cavity, a vacuum connector is installed in each third through hole, and the vacuum connector is connected to an air outlet of a dry pump, and the dry pump performs vacuumization on the vacuum cavity through the third through hole.

[0014] The operation arm mechanism comprises a first suction disc and a second suction disc.

[0015] The first suction disc is connected to the output end of a lifting motor through a first connecting rod, the lifting motor is connected to the output end of a first motor, the lifting motor drives the first suction disc to make linear motion in the vertical direction through the first connecting rod, and the first motor drives the lifting motor to rotate.

[0016] The second suction disc is connected to the output end of a rotating motor through a second connecting rod, the rotating motor drives the second suction disc to rotate through the second connecting rod, so that the working end of the second suction disc faces upward or downward, the rotating motor is connected to the output end of a second motor through a third connecting rod, and the second motor drives the third connecting rod to rotate, so as to drive the second suction disc to rotate through the rotating motor.

[0017] The first suction disc and the second suction disc are both electromagnetic suction discs.

[0018] The first motor and the second motor are both arranged outside the vacuum cavity, and a magnetic fluid sealing transmission device is installed between the first motor and the lifting motor and between the second motor and the third connecting rod.

[0019] A bellows is installed between the bonding pressure head and the inner top wall surface of the vacuum cavity, and the bellows surrounds the output guide rod of the air cylinder.

[0020] The vacuum cavity is supported by a workbench, and a top plate of the workbench is provided with a display screen.

[0021] The utility model discloses the beneficial effect is as follows:

[0022] The utility model discloses compact, reasonable, convenient operation, through setting up vacuum generating subassembly, the combination use of molecular pump and dry pump can make the vacuum degree inside vacuum cavity reach 0.005Pa within ten minutes, shorten the vacuumizing time, improve the device work efficiency, through setting up plasma generating subassembly, can emit plasma beam to the inside vacuum cavity, thereby the wafer is carried out plasma bombardment activation, makes the wafer can carry out the bonding under room temperature and need not heat the wafer, effectively improves production efficiency, the utility model discloses the structure design is reasonable, convenient and reliable to use, and the practicality is good. BRIEF DESCRIPTION OF DRAWINGS

[0023] Figure 1 It is the structure schematic diagram of the utility model.

[0024] Figure 2 It is Figure 1 It is the schematic diagram of omitting workbench.

[0025] Figure 3 It is the structure schematic diagram of vacuum cavity in the utility model.

[0026] Figure 4 It is the internal structure schematic diagram of vacuum cavity in the utility model Figure 1 (overlooking).

[0027] Figure 5 It is the internal structure schematic diagram of vacuum cavity in the utility model Figure 2 (side view).

[0028] Wherein: 1, ion pump, 2, molecular pump, 3, vacuum cavity, 301, first through -hole, 302, second through -hole, 4, support base, 5, first flange, 6, second flange, 7, workbench, 8, operation platform, 9, operating arm mechanism, 10, air cylinder, 11, first connecting pipe, 12, second connecting pipe, 13, magnetic fluid sealing transmission device, 14, plug-in valve, 15, bonding pressure head, 16, bellow, 17, vacuum joint,

[0029] 901, first suction cup, 902, second suction cup, 903, first connecting rod, 904, second connecting rod, 905, third connecting rod, 906, lifting motor, 907, rotary motor. DETAILED DESCRIPTION

[0030] The specific implementation of the utility model will be described below in combination with the drawings.

[0031] The structure and function of the utility model are as follows:

[0032] As shown in Figures 1-5 A room temperature vacuum pressure bonding device, comprising a vacuum cavity 3, a first through hole 301 and a second through hole 302 are respectively arranged on the wall surface of the vacuum cavity 3, the first through hole 301 is connected with a plasma generating assembly, the second through hole 302 is connected with a vacuum generating assembly, the vacuum generating assembly and the plasma generating assembly are arranged outside the vacuum cavity 3, the inside of the vacuum cavity 3 is vacuumized through the vacuum generating assembly, and the wafer inside the vacuum cavity 3 is activated through the plasma generating assembly; a gas cylinder 10 is fixed on the outer top wall surface of the vacuum cavity 3, the output guide rod of the gas cylinder 10 extends into the inside of the vacuum cavity 3 and is connected with a bonding pressure head 15, an operation table 8 is fixed on the inner bottom wall surface of the vacuum cavity 3, the operation table 8 is located directly below the bonding pressure head 15, and an operation arm mechanism 9 is installed in the inside of the vacuum cavity 3 in cooperation; a piece of activated wafer is stacked on another piece of activated wafer through the operation arm mechanism 9 to obtain a wafer assembly, the wafer assembly is transported to the top of the operation table 8 by the operation arm mechanism 9, and the bonding pressure head 15 is driven by the gas cylinder 10 to move linearly in the vertical direction and approach the operation table 8, so that pressure is applied to the wafer assembly on the top of the operation table 8. By arranging the vacuum generating assembly, the inside of the vacuum cavity 3 can be uniformly and quickly vacuumized, so that the vacuumizing time is shortened; by arranging the plasma generating assembly, an ion beam can be emitted into the inside of the vacuum cavity 3, so that the wafer is activated by ion bombardment, the wafer can be bonded at room temperature without heating the wafer, and the production efficiency is effectively improved.

[0033] The room temperature vacuum pressure bonding device of the utility model includes plasma generating assembly, vacuum generating assembly, vacuum cavity 3, operation arm mechanism 9, gas cylinder 10, operation table 8, bonding pressure head 15, wherein,

[0034] The bottom wall surface of the vacuum cavity 3 is provided with a first through hole 301 and a plurality of third through holes, and the side wall surface is provided with a second through hole 302, the first through hole 301 is used for being connected with the plasma generating assembly, the second through hole 302 is used for being connected with the vacuum generating assembly, a single third through hole is provided with a vacuum connector 17 in cooperation, a single vacuum connector 17 is connected with the air outlet of the dry pump, and the dry pump is used for vacuumizing the vacuum cavity 3 through the third through hole;

[0035] The top of the vacuum cavity 3 is provided with an operation hole, and the operation hole is provided with a sealing cover in cooperation.

[0036] The inside of the vacuum cavity 3 is further provided with an operation table 8 and a bonding pressure head 15 in cooperation, the bonding pressure head 15 is located directly above the operation table 8, the bonding pressure head 15 is connected with the output end (corresponding to the output guide rod) of the gas cylinder 10, the cylinder body of the gas cylinder 10 is arranged outside the vacuum cavity 3 and is fixed on the outer top wall surface of the vacuum cavity 3, the output guide rod of the gas cylinder 10 extends into the inside of the vacuum cavity 3 and is connected with the bonding pressure head 15, and the gas cylinder 10 drives the bonding pressure head 15 to move linearly and approach or move away from the operation table 8.

[0037] A bellows 16 is mounted between the bonding head 15 and the inner top wall surface of the vacuum cavity 3, the bellows 16 surrounds the output guide rod of the cylinder 10, and the bellows 16 is fixed to the inner top wall surface of the vacuum cavity 3 and the top wall surface of the bonding head 15 by welding. The bellows 16 can ensure the sealing performance of the vacuum cavity 3 and improve the movement stability of the bonding head 15.

[0038] The vacuum cavity 3 is fixed to the top of the workbench 7 and supported by the workbench 7. The top plate of the workbench 7 is provided with a display screen.

[0039] The plasma generating assembly includes an ion pump 1. The plasma output port of the ion pump 1 is connected to the first connecting pipe 11, and the first connecting pipe 11 is connected to the first through hole 301 through the first flange 5. The ion pump 1 is used to generate a plasma beam, which enters the inside of the vacuum cavity 301 through the first connecting pipe 11, the first flange 5, and the first through hole 301.

[0040] In addition, in order to obtain a suitable plasma beam, the ion pump 1 adopts a Hall plasma source. The Hall plasma source can perform substrate ion bombardment cleaning on the wafer during vacuum coating, can perform ion bombardment energy delivery on the wafer during deposition, can remove water and hydrocarbons on the surface of the wafer, reduce internal stress, remove weakly bonded molecules, and activate the wafer.

[0041] The vacuum generating assembly includes a molecular pump 2. The air outlet of the molecular pump 2 is connected to the second connecting pipe 12, and the second connecting pipe 12 is connected to the second through hole 302 through the second flange 6. The molecular pump 2 has high working efficiency and can exhaust air and gas out of the vacuum cavity 3 in a short time, so that a high-vacuum environment is formed inside the vacuum cavity 3.

[0042] The combination of the molecular pump 2 and the dry pump can make the vacuum degree inside the vacuum cavity 3 reach 0.005 Pa within 10 minutes, thereby improving the working efficiency of the device.

[0043] The bottom of the molecular pump 2 is provided with a supporting base 4, which is used to support the molecular pump 2.

[0044] The first connecting pipe 11 and the second connecting pipe 12 are both provided with plug valves 14, which are used to control the on-off of the corresponding pipelines.

[0045] The operation arm mechanism 9 comprises a first suction disc 901 and a second suction disc 902; the first suction disc 901 is connected with the output end of a lifting motor 906 through a first connecting rod 903, the lifting motor 906 is connected with the output end of a first motor, the lifting motor 906 drives the first suction disc 901 to make linear motion in the vertical direction through the first connecting rod 903, the first motor drives the lifting motor 906 to rotate, thereby driving the first suction disc 901 to rotate through the first connecting rod 903; the second suction disc 902 is connected with the output end of a rotating motor 907 through a second connecting rod 904, the rotating motor 907 drives the second suction disc 902 to rotate through the second connecting rod 904, thereby making the working end face of the second suction disc 902 face upward or downward, the rotating motor 907 is connected with the output end of a second motor through a third connecting rod 905, the second motor drives the third connecting rod 905 to rotate, thereby driving the second suction disc 902 to rotate through the rotating motor 907.

[0046] The first suction disc 901 and the second suction disc 902 are both electromagnetic suction discs, so that the corresponding wafers can be stably adsorbed, and the wafers are prevented from falling off.

[0047] The first motor and the second motor are arranged outside the vacuum cavity 3, and a magnetic fluid sealing transmission device 13 is cooperatively arranged between the first motor and the lifting motor 906 and between the second motor and the third connecting rod 905. The magnetic fluid sealing transmission device 13 can ensure the sealing performance of the vacuum cavity 3 while transmitting the torque output by the motor into the inside of the vacuum cavity 3, so as to prevent gas leakage and pollution, and is suitable for occasions with high sealing requirements.

[0048] The working process of the utility model is as follows:

[0049] The sealing cover at the top of the vacuum cavity 3 is opened, one wafer is respectively placed on the first suction disc 901 and the second suction disc 902 in the vacuum cavity 3 through the operation hole, at this time, the working end face of the first suction disc 901 and the working end face of the second suction disc 902 both face downward, after being placed, the sealing cover is closed, the molecular pump 1 and the dry pump are started, and the inside of the vacuum cavity 3 is vacuumized until the target vacuum degree is reached;

[0050] Subsequently, the first motor is started, the first chuck 901 and the wafer thereon are moved to the top of the first through hole 301 by the lifting motor 906, the ion pump 1 is started, and the wafer is activated by plasma bombardment, and after the activation, the first chuck 901 and the wafer thereon are moved to a position between the operation table 8 and the first through hole 301 under the action of the first motor to wait.

[0051] Then, the second motor is started, the second chuck 902 and the wafer thereon are moved to the top of the first through hole 301 by the third connecting rod 905 and the rotating motor 907, the wafer on the second chuck 902 is activated by plasma bombardment by the plasma generating assembly, after the activation, the rotating motor 907 is started, the second chuck 902 is turned over by the second connecting rod 904, so that the working end face of the second chuck 902 faces upward, so that the wafer thereon is above the second chuck 902, and after the turning over, the second chuck 902 and the wafer thereon are moved to the top of the first chuck 901 under the action of the second motor.

[0052] Then, the lifting motor 906 is started, the first chuck 901 is moved downward in a straight line along the vertical direction by the first connecting rod 903, so that the wafer on the first chuck 901 is stacked on the wafer on the second chuck 902 and adheres thereto, then the second chuck 902 is powered off, the wafer thereon is separated from the second chuck 902 and is adsorbed by the first chuck 901, so that the preliminary bonding is completed, then the lifting motor 906 drives the first chuck 901 to move upward in a straight line along the vertical direction, so that the wafer after the preliminary bonding is raised to a certain height.

[0053] Finally, under the action of the first motor, the first chuck 901 is moved to the top of the operation table 8, then the lifting motor 906 drives the first chuck 901 to move downward in a straight line along the vertical direction, so that the wafer after the preliminary bonding is placed on the top center of the operation table 8, then the first chuck 901 is powered off and separated from the wafer after the preliminary bonding, and under the action of the first motor, the first chuck 901 is away from the top of the operation table 8, then the cylinder 10 is extended, the bonding pressure head 15 is driven to move downward along the vertical direction, so that the wafer on the operation table 8 is pressed, so that the final bonding is completed, after the final bonding is completed, the cylinder 10 is retracted to the original position, the sealing cover is opened, and the bonded wafer is taken out through the operation hole.

[0054] The above description is an explanation of the utility model, not a limitation of the utility model, the scope defined by the utility model is referred to the claims, and any form of modification can be made within the protection scope of the utility model.

Claims

1. A room temperature vacuum pressure bonding apparatus, characterized by: The vacuum cavity (3) is provided with a first through hole (301) and a second through hole (302) on the wall surface, the first through hole (301) is connected with a plasma generating assembly, and the second through hole (302) is connected with a vacuum generating assembly; the vacuum generating assembly and the plasma generating assembly are arranged outside the vacuum cavity (3); the vacuum cavity (3) is vacuumized by the vacuum generating assembly; and the wafer in the vacuum cavity (3) is activated by the plasma generating assembly. The outer top wall surface of the vacuum cavity (3) is fixed with a gas cylinder (10), the output guide rod of the gas cylinder (10) extends into the interior of the vacuum cavity (3) and is connected with a bonding pressure head (15), the inner bottom wall surface of the vacuum cavity (3) is fixed with an operation table (8), the operation table (8) is located directly below the bonding pressure head (15), and an operation arm mechanism (9) is installed in the interior of the vacuum cavity (3) in a matched mode. A wafer assembly is obtained by stacking one activated wafer on another activated wafer through the operation arm mechanism (9), the wafer assembly is transported to the top of the operation table (8) by the operation arm mechanism (9), the bonding pressure head (15) is driven by the gas cylinder (10) to move linearly along the vertical direction and approach the operation table (8), so that the wafer assembly on the top of the operation table (8) is pressed.

2. A room temperature vacuum pressure bonding apparatus as claimed in claim 1, characterized in that: The plasma generating assembly comprises an ion pump (1), the plasma output port of the ion pump (1) is connected with a first connecting pipe (11), and the first connecting pipe (11) is connected with the first through hole (301) through a first flange (5).

3. A room temperature vacuum pressure bonding apparatus as claimed in claim 1, wherein: The vacuum generating assembly comprises a molecular pump (2), the air outlet of the molecular pump (2) is connected with a second connecting pipe (12), and the second connecting pipe (12) is connected with the second through hole (302) through a second flange (6).

4. A room temperature vacuum pressure bonding apparatus as claimed in claim 3, characterized in that: The bottom of the molecular pump (2) is installed in a matched mode with a supporting base (4).

5. A room temperature vacuum pressure bonding apparatus as claimed in claim 1, wherein: A plurality of third through holes are formed in the bottom wall surface of the vacuum cavity (3), a vacuum connector (17) is installed in a matched mode in each third through hole, each vacuum connector (17) is connected with the air outlet of a dry pump, and the dry pump is used to vacuumize the vacuum cavity (3) through the third through holes.

6. A room temperature vacuum pressure bonding apparatus as claimed in claim 1, wherein: The operation arm mechanism (9) comprises a first suction disc (901) and a second suction disc (902). The first suction disc (901) is connected with the output end of a lifting motor (906) through a first connecting rod (903), the lifting motor (906) is connected with the output end of a first motor, the lifting motor (906) is driven by the first motor to rotate, and the first motor drives the lifting motor (906) to rotate through the first connecting rod (903) to drive the first suction disc (901) to move linearly along the vertical direction. The second suction disc (902) is connected with the output end of a rotary motor (907) through a second connecting rod (904), the rotary motor (907) drives the second suction disc (902) to rotate through the second connecting rod (904), so that the working end of the second suction disc (902) faces upward or downward, the rotary motor (907) is connected with the output end of a second motor through a third connecting rod (905), the second motor drives the third connecting rod (905) to rotate, thereby driving the second suction disc (902) to rotate through the rotary motor (907).

7. A room temperature vacuum pressure bonding apparatus as claimed in claim 6, characterized in that: The first suction disc (901) and the second suction disc (902) are both electromagnetic suction discs.

8. A room temperature vacuum pressure bonding apparatus as claimed in claim 6, wherein: The first motor and the second motor are both arranged outside the vacuum cavity (3), and a magnetic fluid sealing transmission device (13) is cooperatively installed between the first motor and the lifting motor (906) and between the second motor and the third connecting rod (905).

9. A room temperature vacuum pressure bonding apparatus as claimed in claim 1, wherein: A bellows (16) is cooperatively installed between the bonding pressure head (15) and the inner top wall surface of the vacuum cavity (3), and the bellows (16) surrounds the output guide rod of the air cylinder (10).

10. The room temperature vacuum pressure bonding apparatus of claim 1, wherein: The vacuum cavity (3) is supported by a workbench (7), and the top plate of the workbench (7) is cooperatively installed with a display screen.

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