Electronic filter circuit and electronic device

Abstract

The utility model relates to an electronic filter circuit and an electronic device. The present description relates to an electronic filter circuit comprising: an integrated passive device; a bulk acoustic wave filter stacked on the integrated passive device on a first surface side of the integrated passive device; and at least one conductive post spanning the integrated passive device and connecting an electrode of the bulk acoustic wave filter to a contact element located on a second surface of the integrated passive device opposite the first surface and intended to be connected to an external element.

Description

[0001] Cross-references to related applications

[0002] This application is a translation of and claims priority to French patent application No. 2401259 entitled “Circuitélectronique de filtrage”, filed on February 8, 2024, which is incorporated herein by reference to the fullest extent permitted by law. Technical Field

[0003] This disclosure generally relates to electronic devices, and more specifically to electronic filter circuits. Background Technology

[0004] Many electronic devices include at least one electronic filter circuit. For example, such circuits are integrated into cellular phones or smartphones to prevent interference from radio frequency signals emitted by other electronic devices or noise from external radio frequency sources that could disrupt the operation of the phone's radio frequency communication receiving channel. However, existing electronic filter circuits have various drawbacks. Utility Model Content

[0005] It is necessary to overcome all or part of the shortcomings of existing electronic filter circuits.

[0006] To this end, an embodiment provides an electronic filter circuit comprising: an integrated passive device; a bulk acoustic wave filter stacked on the integrated passive device on a first surface side; and at least one conductive post spanning the integrated passive device and connecting the electrodes of the bulk acoustic wave filter to a contact element located on a second surface of the integrated passive device opposite to the first surface and intended to be connected to an external element.

[0007] According to an embodiment, a cover for a bulk acoustic filter is formed by integrating passive devices.

[0008] According to an embodiment, the first surface and the third surface of the bulk acoustic wave filter located in front of the first surface define a cavity.

[0009] According to an embodiment, the cavity has a thickness defined by the height of at least one conductive post protruding from a first surface.

[0010] According to an embodiment, the cavity is laterally defined by its peripheral walls.

[0011] According to an embodiment, the peripheral wall is made of an insulating material, preferably a polymer material.

[0012] According to an embodiment, at least one conductive post is located inside the cavity.

[0013] According to an embodiment, the integrated passive device includes a first semiconductor substrate, the first semiconductor substrate including a region in which at least one filter is formed, preferably at least one bandpass filter, more preferably an RLC filter.

[0014] According to an embodiment, the bulk acoustic wave filter includes a second semiconductor substrate, the second semiconductor substrate including a region in which a bulk acoustic wave filter structure connected to an electrode is formed inside and on top of the region.

[0015] An embodiment provides an electronic device, preferably a cellular phone or smartphone, comprising: an electronic filter circuit including: an integrated passive device; a bulk acoustic wave filter stacked on the integrated passive device on a first surface side; and at least one conductive post spanning the integrated passive device and connecting the electrodes of the bulk acoustic wave filter to a contact element located on a second surface of the integrated passive device opposite to the first surface and intended to be connected to an external element.

[0016] According to an embodiment, the integrated passive device forms the cover of the bulk acoustic wave filter.

[0017] According to an embodiment, the first surface and the third surface of the bulk acoustic filter located in front of the first surface define a cavity.

[0018] According to an embodiment, the cavity has a thickness defined by the height of the at least one conductive post, which protrudes from the first surface.

[0019] According to an embodiment, the cavity is laterally defined by a peripheral wall.

[0020] According to an embodiment, the peripheral wall is made of an insulating material.

[0021] According to an embodiment, the at least one conductive post is located inside the cavity.

[0022] According to an embodiment, the integrated passive device includes a first semiconductor substrate, the first semiconductor substrate including a region in which at least one filter is formed both inside and on top of the region.

[0023] According to an embodiment, the bulk acoustic wave filter includes a second semiconductor substrate, the second semiconductor substrate including a region in which a bulk acoustic wave filter structure connected to the electrode is formed inside and on top of the region.

[0024] According to an embodiment, the electronic device is a cellular phone. Attached Figure Description

[0025] The foregoing features and advantages, as well as other features and advantages, will be described in detail with reference to the accompanying drawings, in which specific embodiments are given by way of illustration and not limitation:

[0026] Figure 1 This is a simplified and partial cross-sectional view of an example of an electronic filter circuit according to an embodiment;

[0027] Figure 2A , Figure 2B , Figure 2C , Figure 2D and Figure 2E Each is a simplified and partial cross-sectional view of the structure obtained at the end of a certain step of the method for manufacturing an integrated passive device according to an embodiment;

[0028] Figure 3A , Figure 3B and Figure 3C Each is a simplified and partial cross-sectional view of the structure obtained at the end of a certain step of the method for manufacturing an electronic filter circuit according to an embodiment; and

[0029] Figure 4 This is a simplified and partial top view of an example of a device with an integrated electronic filter circuit. Detailed Implementation

[0030] Similar features in the various figures are indicated by similar reference numerals. In particular, common structural and / or functional features in the various embodiments may have the same reference numerals and may have the same structure, dimensions, and material properties.

[0031] For clarity, only the steps and components useful for understanding the embodiments are described in detail. In particular, the application of the electronic filter circuit is not detailed; the embodiments are compatible with all or most applications of electronic filter circuits, and possible modifications can be made by those skilled in the art after reading this specification.

[0032] Unless otherwise indicated, when referring to two elements connected together, it means a direct connection without any intermediate elements other than a conductor, and when referring to two elements coupled together, it means that the two elements can be connected or they can be coupled via one or more other elements.

[0033] In the following description, when terms such as “edge,” “back,” “top,” “bottom,” “left,” “right,” etc., which define absolute position, or terms such as “above,” “below,” “upper,” “lower,” etc., which define relative position, or terms such as “horizontal,” “vertical,” etc., which define direction, are used, they refer to the orientation of the accompanying drawings unless otherwise indicated.

[0034] Unless otherwise stated, the expressions “approximately,” “around,” “substantially,” and “…about” indicate an addition or subtraction of 10%, preferably an addition or subtraction of 5%.

[0035] In the following description, unless otherwise stated, the terms “insulating” and “conductive” refer to electrical insulation and electrical conductivity, respectively.

[0036] Figure 1 This is a partial and simplified cross-sectional view of an example of an electronic filter circuit 100 according to an embodiment.

[0037] In the example shown, the electronic filter circuit 100 includes an integrated passive device 101, which includes a semiconductor substrate 103, such as a wafer made of a semiconductor material like silicon. In this example, the semiconductor substrate 103 includes a region 105 that is adjacent to a surface 103A of the semiconductor substrate 103 (in...). Figure 1 In the orientation of the substrate 103, the lower surface is flush with the substrate, and at least one bandpass filter, such as an integrated passive device (IPD) filter, is formed therein. Region 105 includes, for example, a plurality of passive electronic components, each of which is selected from: resistive components, such as resistors; capacitive components, such as capacitors; and inductive components, such as inductors.

[0038] As an example, region 105 includes an RLC filter that includes at least one resistive component, at least one capacitive component, and at least one inductive component. Figure 1 The structure of region 105 is not described in detail to avoid overloading the drawings. In particular, passive electronic components formed in region 105 of semiconductor substrate 103 are not shown.

[0039] In the illustrated example, the integrated passive device 101 also includes an interconnect structure 107 on the surface 103A of the semiconductor substrate 103. The interconnect structure 107 includes, for example, an insulating layer 109 and a stack of conductive tracks 111 located within and / or between the insulating layer 109, some of which of the conductive tracks 111 contact the region 105.

[0040] In the illustrated example, each conductive track 111 is connected to a contact element 113 located on surface 103A of semiconductor substrate 103. For example, the conductive track 111 enables the contact element 113 to be connected to terminals of passive electronic components formed in region 105. For example, the contact element 113 is intended to be connected to components outside circuit 100. In the illustrated example, the contact element 113 is each connected via solder balls 115 to a contact element 117 supported by a support substrate 119. As an example, the support substrate 119 is a printed circuit board. Each contact element 117 is, for example, a conductive pad or conductive track.

[0041] In the example shown, circuit 100 also includes a bulk acoustic wave (BAW) filter 151, which is located on the side of semiconductor substrate 103 opposite to its surface 103A, on the surface 103B (in Figure 1 The components (located on the upper surface side of substrate 103) are stacked on the integrated passive device 101. In the example shown, the bulk acoustic wave filter 151 includes a semiconductor substrate 153, such as a wafer made of a semiconductor material like silicon, which has a bulk acoustic wave filter structure 155 connected to electrodes 157 formed therein and on top.

[0042] Structure 155 is, for example, an FBAR (Thin Film Bulk Acoustic Resonator) type, also known as a "diaphragm" bulk acoustic filter. In this case, structure 155 includes, for example, a diaphragm made of an insulating material and at least one piezoelectric layer on the diaphragm, which is suspended above an air-filled cavity formed in a substrate 153, and the at least one piezoelectric layer is, for example, between electrodes 157. Figure 1 Structure 155 is not described in detail to avoid overloading the figures. Alternatively, structure 155 may be of the SMR (Solid-Modified Resonator) type. In this case, structure 155 includes, for example, a diaphragm of insulating material located on and in contact with the Bragg mirror, and at least one piezoelectric layer located on the diaphragm, for example, between electrodes 157.

[0043] In the illustrated example, the integrated passive device 101 is separated from the bulk acoustic wave filter 151 via a cavity 171. In this example, the cavity 171 is located at the surface 103B of the semiconductor substrate 103 (i.e., on the surface of the semiconductor substrate 103). Figure 1 In the orientation, extending vertically from the upper surface of the integrated passive device 101 to the surface 153A of the semiconductor substrate 153 of the bulk acoustic wave filter 151 located in front of surface 103B (i.e., in the orientation of the semiconductor substrate 153 of the bulk acoustic wave filter 151, from the upper surface of the integrated passive device 101). Figure 1 In the orientation of the cavity 171, it extends all the way to the lower surface of the bulk acoustic wave filter 151. In the example shown, the cavity 171 is laterally defined or defined by the peripheral wall 173. Figure 1 In the example illustrated, the peripheral wall 173 extends vertically from surface 103B of substrate 103 to surface 153A of substrate 153. As an example, the peripheral wall 173 is made of an insulating material such as a polymer. The cavity 171 defined by the wall 173 and surfaces 103B and 153A is, for example, filled with air. As a variation, the interior of the cavity 171 may be under a partial vacuum.

[0044] In the illustrated example, circuit 100 also includes conductive posts 181 spanning the integrated passive device 101, and each conductive post connects one of the electrodes 157 of the bulk acoustic wave filter 151 to one of the contact elements 113. In the illustrated example, each conductive post 181 protrudes from the surface 103B of the semiconductor substrate 103, spans the cavity 171, and is located on top of and in contact with one of the electrodes 157. As an example, the height of each post 181 defines the height or thickness of the cavity 171.

[0045] For example, in a top view, the peripheral wall 173 has an annular shape surrounding the conductive post 181. This advantageously allows the conductive post 181 to be protected from external stresses, such as mechanical shocks. This further enables a reduction in the lateral dimension of the electronic filter circuit, for example, compared to the structure of the electrode 157 of the BAW filter 151 connected to the contact element 117 of the support substrate 119 via a post located outside the cavity 171. As an example, in a top view, the peripheral wall 173 has a periphery of any shape, such as substantially rectangular, elliptical, square, circular, etc. The cavity 171 is, for example, tight or sealed. This prevents particles or moisture from entering the cavity 171. As a variation, the peripheral wall 173 may have openings, particularly allowing air exchange between the interior and exterior environments of the cavity 171. For example, this facilitates pressure balance between the interior and exterior of the cavity 171, for example, to account for the heat generated by the circuit 100 during its operation.

[0046] In circuit 100, the integrated passive device 101 is advantageously used as a cover for the bulk acoustic wave filter 151. This advantageously makes it possible to avoid using a dedicated cover that does not include electronic components. In other words, using the integrated passive device 101 as a cover for the bulk acoustic wave filter 151 makes it possible to combine mechanical protection functions and filtering functions in the same element, with the mechanical protection function provided in particular by the substrate 103 and the peripheral wall 173, and the filtering function implemented in particular by the region 105.

[0047] Figure 1 An example of circuit 100 including two conductive posts 181 is illustrated, each conductive post connecting one of the contact elements 113 of the integrated passive device 101 to one of the electrodes 157 of the bulk acoustic wave filter 151. However, this example is not limiting, and circuit 100 may more generally include an integer number of conductive posts, each conductive post connecting the contact element of the integrated passive device 101 to the electrode of the bulk acoustic wave filter 151.

[0048] The advantage of using filters with integrated passive devices is that they have high suppression performance in the attenuation bands located on either side of their passband. However, a disadvantage of these filters is that a wide transition band is inserted between their passband and each of their attenuation bands. Conversely, the advantage of bulk acoustic filters is that their transition band is narrower than that of filters using integrated passive devices, but they suffer from lower suppression performance. The fact that the integrated passive device 101 and the bulk acoustic filter 151 are combined in circuit 100 makes it possible to combine the advantages of both filters and eliminate or reduce their disadvantages. For example, circuit 100 has a narrower transition band than the integrated passive device 101 alone, and its suppression performance is better than that of the bulk acoustic filter 151 alone.

[0049] Furthermore, space is advantageously saved due to the stacking of the integrated passive device 101 and the bulk acoustic filter 151 in circuit 100. This further enables a shorter connection between the integrated passive device 101 and the bulk acoustic filter 151, thereby providing lower resistance.

[0050] Figure 2A , Figure 2B , Figure 2C , Figure 2D and Figure 2E Each is a simplified and partial cross-sectional view of the structure obtained at the end of a certain step of the method for manufacturing the integrated passive device 101 according to the embodiment.

[0051] Figure 2A The diagram illustrates the structure obtained after forming regions 105 and interconnect structures 107 on surface 103A of substrate 103. One or more electronic components (not shown) are formed inside and / or on top of regions 105. According to an embodiment, at this stage of the process, substrate 103 corresponds to a wafer, and multiple regions 105 integrating passive devices are formed inside and / or on top of substrate 103; these regions 105 may be identical or different. Figure 2A The diagram shows a single region 105, and an interconnect structure 107 including conductive tracks 111 connected to region 105 and an insulating layer 109 covering the conductive tracks 111 and the surface 103A of a substrate 103 surrounding the conductive tracks 111. At this stage of the method, the thickness of the substrate 103 is greater than the desired final thickness of the substrate 103. At this stage of the method, the thickness of the substrate 103 is, for example, in the range of 500 μm to 1.3 mm.

[0052] Figure 2BThe structure obtained after forming an opening 201 at a desired location on each connecting post 181 and an opening 203 at a desired location on the insulating wall 205 is shown. Openings 201 and 203 completely span the interconnect structure 107 and extend from surface 103A to a portion of the thickness of substrate 103. Openings 201 and 203 have the same depth. The depth of opening 201 is greater than the depth of opening 203. The depth of opening 203 is, for example, substantially equal to the desired final thickness of substrate 103. The depth of opening 203 is, for example, in the range of 50 to 300 μm. Openings 201 and 203 are formed, for example, by a deep reactive ion etching (DRIE) step. Depending on the method used to form openings 201 and 203, openings 201 and 203 can be formed simultaneously or in separate steps. In particular, for deep reactive ion etching, the etching rate depends on the diameter of the opening, so openings 203, for example, with a width smaller than the average diameter of opening 201, can be formed simultaneously with opening 201.

[0053] The cross-section of each opening 201 can have any shape. As an example, each opening 201 in a top view can have a substantially circular shape, a rectangular shape with rounded corners, an elliptical shape, etc. For example, the opening 201 has a depth that depends on the desired height of the column 181.

[0054] Figure 2B The structure obtained after forming an insulating layer 207 in each opening 201 and an insulating wall 205 in each opening 203 is further illustrated. At this stage of the method, the insulating layer 207 coats the sidewalls and bottom of the opening 201. This step may include simultaneously depositing an insulating layer on the walls of both the opening 203 and the opening 201, the thickness of which is such that it fills, i.e., completely fills, the opening 203, but not each opening 201, thus creating a cavity 209 in each opening 201 after the insulating layer is formed.

[0055] Figure 2C The structure obtained after the following steps is shown: for each connecting post to be formed, an opening 211 is formed in the insulating layer 109 to expose one of the conductive tracks 111; on the insulating layer 207, including for each connecting post to be formed, a mask (not shown) is deposited on the opening of the exposed cavity 209, the opening 211, and the portion of the insulating layer 109 that couples the cavity 209 to the opening 211; and an interface layer 215 is formed in each opening. At this stage of the method, the interface layer 215 covers all walls of the cavity 209, particularly the sidewalls and bottom of the cavity 209, the walls of the opening 211, and the exposed portion of the insulating layer 109 that couples the cavity 209 to the corresponding opening 211. The mask may correspond to a film applied to the insulating layer 109.

[0056] Figure 2CThe structure obtained after the following steps is further illustrated: for each connecting post to be formed, each cavity 209 is completely filled with a conductive material, thereby forming the shaft of the connecting post 181 and the connecting portion 217 forming each connecting post. The connecting portion 217 corresponds, for example, to one of the contact elements 113 of the circuit 100. The conductive material forming the shaft can be deposited by electrodeposition on the interface layer 215. In this case, the deposition of the conductive material is performed from the interface layer 215 in a direction substantially perpendicular to the interface layer 215. This advantageously allows the cavity 209 to be filled even when the shape factor of the cavity 209, i.e., the ratio of the cavity height to the cavity diameter, is high, because the deposition of the conductive material is performed specifically from the sidewalls of the cavity 209.

[0057] Figure 2C The structure obtained after removing the membrane and forming an insulating layer 219 covering the connection portion 217 for each connection post 181 is further shown.

[0058] Figure 2D The structure obtained after etching substrate 103 from surface 103B of substrate 103 is shown. At the end of the etching step, for each connecting post 181, a portion of the axis surrounded by interface layer 215 and insulating layer 207 protrudes from surface 103B of substrate 103 along a height H. Height H corresponds substantially to, for example, the thickness of the future cavity 171. The etching step may involve selective chemical etching of the material forming insulating layer 207. For example, etching of substrate 103 stops when the end of the wall is flush with the lower surface 103B. Height H is determined by the etching step.

[0059] Figure 2D The structure obtained after forming an insulating layer 221 on the surface 103B of the substrate 103 is further shown. The insulating layer 221 is made of, for example, the same material as the insulating layer 207, and the thickness of the insulating layer 221 at this stage of the method is substantially equal to the sum of the thickness of the insulating layer 207 and the desired final thickness of the insulating layer 221, for example, twice the thickness of the insulating layer 207.

[0060] Figure 2E The structure obtained after the portion of insulating layer 207 exposed on surface 103B of substrate 103 has been fully etched is shown. This step can further cause etching of insulating layer 221 across the thickness of insulating layer 207. Insulating layer 221 with the desired final thickness is then obtained.

[0061] Figure 2E The structure obtained after etching an interface layer 215 on the end surface of each connecting post 181, forming a top coating layer 223, and forming a bonding material 225 is further shown.

[0062] Figure 2E The structure obtained after the cutting step to separate the integrated passive device 101 is also shown. As an example, the cutting line is located between the walls 205 of adjacent integrated passive devices 101.

[0063] Each of these individually integrated passive devices 101 can then be bonded to an external component, such as a support substrate 119. Wall 205 protects the area 105 of the integrated passive device 101, particularly during handling and bonding of the integrated passive device 101 to the external component, preventing electrostatic discharge at the sidewalls of the integrated passive device 101.

[0064] Figure 3A , Figure 3B and Figure 3C Each is a manufactured electronic filter circuit according to an embodiment, for example... Figure 1 A simplified and partial cross-sectional view of the structure obtained at the end of a certain step of the method for circuit 100. The following is about... Figures 3A to 3C The steps described can be found in previous discussions. Figures 2A to 2E The described integrated passive device 101 is implemented before, during, or after the formation step.

[0065] Figure 3A The structure obtained after the formation of structure 155 inside and on top of semiconductor substrate 153 and after the formation of electrode 157 is shown.

[0066] Figure 3A The structure obtained after forming a peripheral wall 173 on the surface 153A of the semiconductor substrate 153 is further illustrated. At the end of this step, the peripheral wall 173 has a height, for example, substantially equal to the height H of the pillar 181.

[0067] Figure 3B It shows that in the Figure 2E The integrated passive device 101 is transferred to Figure 3A The structure obtained after applying the bulk acoustic wave filter 151. As an example, the integrated passive device 101 is compared with... Figure 2E The orientation of the components is reversed so that the surface 103B of the semiconductor substrate 103 is in front of the surface 153A of the bulk acoustic wave filter 151. Then, for example, a block of bonding material 225 for integrating passive devices 101 is brought into contact with the electrodes 157 of the bulk acoustic wave filter 151, with the peripheral wall 173 supported on the surface 103B of the semiconductor substrate 103. For example, an electronic filter circuit 100 is thus obtained.

[0068] Figure 3CThe structure obtained after bonding the electronic filter circuit 100 to the support substrate 119 is shown. As an example, the insulating layer 219 is previously opened vertically in line with the contact elements 113 to clear their surfaces opposite the posts 181. Then, for example, the circuit 100 is transferred onto the support substrate 119 such that the surface 103A of the semiconductor substrate 103 is in front of the contact elements 117 of the support substrate 119.

[0069] Figure 4 This is a simplified and partial top view of an example of a device 400 with an integrated electronic filter circuit, such as circuit 100. In the example shown, device 400 is a cellular phone or smartphone.

[0070] In this example, device 400 includes processing circuitry 401 (AP), such as a microcontroller or main microprocessor of device 400. Processing circuitry 401 is connected, for example, to a radio frequency integrated circuit 403 (RFIC) including electronic filter circuitry 100. In the illustrated example, RFIC 403 is connected to an antenna 405 (ANT), such as a radio frequency communication antenna of device 400. Although Figure 4 This is not described in detail to avoid overloading the accompanying drawings, but the RF integrated circuit 403 may also include components and circuits designed to perform functions such as impedance matching, amplification, modulation / demodulation, and switching.

[0071] Device 400 may also include other elements, such as Figure 4 Other electronic components or circuits not shown. These components are... Figure 4 It is represented by function block 407 (FCT).

[0072] Various embodiments and variations have been described. Those skilled in the art will understand that certain features of these various embodiments and variations can be combined, and other variations will occur to them. In particular, those skilled in the art can provide and manufacture circuits similar to circuit 100 but comprising multiple integrated passive devices 101 stacked on top of each other, based on the instructions described herein.

[0073] In addition, although Figure 4 The example described is an integration of circuit 100 into a cellular or smartphone, but the embodiment is not limited to this example. Rather, it is more generally applicable to any device or system with wireless communication capabilities, such as in the field of telematics. In particular, circuit 100 can be integrated into a motor vehicle, for example, to enable wireless internet access functionality, communication between the vehicle and external equipment or systems, autonomous driving, etc.

[0074] Finally, based on the functional indications given above, the actual implementation of the described embodiments and variations is within the capabilities of those skilled in the art. In particular, the described embodiments are not limited to the specific examples of materials and dimensions mentioned in this description.

Claims

1. An electronic filter circuit, characterized by comprising: an integrated passive device; a bulk acoustic wave filter stacked on the integrated passive device on a first surface side of the integrated passive device; and at least one electrically conductive pillar spanning the integrated passive device and connecting electrodes of the bulk acoustic wave filter to contact elements located on a second surface of the integrated passive device opposite the first surface and intended to be connected to external elements. The integrated passive device forms a lid of the bulk acoustic wave filter.

2. The electronic filter circuit of claim 1, wherein, The first surface delimits a cavity with a third surface of the bulk acoustic wave filter located in front of the first surface.

3. The electronic filter circuit of claim 1, wherein, The cavity has a thickness defined by a height of the at least one electrically conductive pillar protruding from the first surface.

4. The electronic filter circuit of claim 3, wherein, The cavity is laterally delimited by a peripheral wall.

5. The electronic filter circuit of claim 3, wherein, The peripheral wall is made of an insulating material.

6. The electronic filter circuit of claim 5, wherein, The at least one electrically conductive pillar is located inside the cavity.

7. The electronic filter circuit of claim 3, wherein, The integrated passive device comprises a first semiconductor substrate comprising a region inside and on top of which at least one filter is formed.

8. The electronic filter circuit of claim 1, wherein, The bulk acoustic wave filter comprises a second semiconductor substrate comprising a region inside and on top of which a bulk acoustic wave filter structure connected to the electrodes is formed.

9. The electronic filter circuit of claim 1, wherein, comprising:

10. An electronic device, comprising: an electronic filter circuit comprising: an integrated passive device; a bulk acoustic wave filter stacked on the integrated passive device on a first surface side of the integrated passive device; and at least one electrically conductive pillar spanning the integrated passive device and connecting electrodes of the bulk acoustic wave filter to contact elements located on a second surface of the integrated passive device opposite the first surface and intended to be connected to external elements. The integrated passive device forms a lid of the bulk acoustic wave filter. 11.The electronic device of claim 10, wherein, The first surface delimits a cavity with a third surface of the bulk acoustic wave filter located in front of the first surface. 12.The electronic device of claim 10, wherein, The cavity has a thickness defined by a height of the at least one electrically conductive pillar protruding from the first surface. 13.The electronic device of claim 12, wherein, The cavity is laterally delimited by a peripheral wall. 14.The electronic device of claim 12, wherein, The peripheral wall is made of an insulating material. 15.The electronic device of claim 14, wherein, The at least one electrically conductive pillar is located inside the cavity. 16.The electronic device of claim 12, wherein, The integrated passive device comprises a first semiconductor substrate comprising a region inside and on top of which at least one filter is formed. 17.The electronic device of claim 10, wherein, The bulk acoustic wave filter comprises a second semiconductor substrate comprising a region inside and on top of which a bulk acoustic wave filter structure connected to the electrodes is formed. 18.The electronic device of claim 10, wherein, The electronic device is a cellular phone. 19.The electronic device of claim 10, wherein, ​

Images