High frequency plasma power supply

Abstract

The application relates to a high-frequency plasma power supply, which realizes high-level response of the high-frequency plasma power supply through a voltage response board with a model of XILINX-AEC100 vehicle-level FPGA. Since the voltage applied in the high-frequency plasma power supply is higher than 400 volts, the voltage response board with the model of XILINX-AEC100 vehicle-level FPGA can realize normal work in a high-voltage environment. An isolating switch gives the voltage response board an operation action of an operator in the form of a level signal through an isolating effect, and in order to reduce the influence of voltage mutation of a voltage booster, a power selector can pre-set output electric energy power of the voltage response board. A power delay device fits large impedance between the voltage booster and a high-frequency electrotome, so as to prevent mutation of output electric power, and further improves the accuracy of the high-frequency plasma power supply in regulating electric energy supply.

Description

Technical Field

[0001] This application relates to the field of plasma power supply technology, and in particular to a high-frequency plasma power supply. Background Technology

[0002] High-frequency plasma power supplies are often electrically connected to high-frequency electrosurgical units. A high-frequency electrosurgical unit is an electrosurgical instrument that replaces a mechanical scalpel for target cutting. It uses a high-frequency, high-voltage current generated at the tip of an effective electrode to contact the target, heating it and achieving separation and coagulation of the target.

[0003] Because the high-frequency, high-voltage current output of a high-frequency electrosurgical unit is positively correlated with the power supply of a high-frequency plasma power source, the power supply of the high-frequency plasma power source affects the high-frequency, high-voltage current output of the electrosurgical unit. In actual operation, high-frequency electrosurgical units require precise control over the magnitude of their high-frequency, high-voltage current output. Currently, high-frequency plasma power sources have limitations in the precision of power supply adjustment. Therefore, it is necessary to propose a new high-frequency plasma power source to address these shortcomings. Utility Model Content

[0004] Therefore, it is necessary to propose a new high-frequency plasma power supply to address the shortcomings of traditional high-frequency plasma power supplies in terms of the accuracy of power supply regulation.

[0005] This application relates to a high-frequency plasma power supply, comprising:

[0006] The voltage response board is electrically connected to the high-frequency electrosurgical unit.

[0007] The disconnect switch is electrically connected to the voltage response board;

[0008] The boost converter is electrically connected to the voltage response board, and the boost converter is electrically connected to the disconnect switch;

[0009] A power delayer is electrically connected to the voltage response board;

[0010] A power selector is electrically connected to the voltage response board.

[0011] Furthermore, the disconnecting switch includes a first disconnecting plate, a second disconnecting plate, and a third disconnecting plate;

[0012] The first isolation plate is electrically connected to the first end of the switch plate of the voltage response plate;

[0013] The second isolation plate is electrically connected to the second end of the switch plate of the voltage response plate;

[0014] The second isolation plate is electrically connected to the power delay plate of the voltage response plate;

[0015] The structures of the first isolation plate, the second isolation plate, and the third isolation plate are the same.

[0016] Furthermore, the first isolation plate includes a switch, a light-emitting diode, a current-limiting resistor, and a DC power supply;

[0017] The positive terminal of the light-emitting diode is electrically connected to the positive terminal of the DC power supply;

[0018] The negative terminal of the light-emitting diode is electrically connected to the negative terminal of the DC power supply;

[0019] The current-limiting resistor is electrically connected to the connection link between the negative terminal of the light-emitting diode and the negative terminal of the DC power supply.

[0020] The switch is electrically connected to the connection link between the current-limiting resistor and the negative terminal of the DC power supply.

[0021] Furthermore, the first isolation plate also includes a phototransistor, a first P-type transistor, and a second P-type transistor;

[0022] The phototube is attached to the sidewall of the light-emitting diode;

[0023] The collector of the first P-type transistor is electrically connected to the weak power supply of the voltage response board.

[0024] The base of the first P-type transistor is electrically connected to the weak power supply of the voltage response board.

[0025] The phototube is electrically connected between the base of the first P-type transistor and the weak power supply of the voltage response board.

[0026] The emitter of the first P-type transistor and the base of the second P-type transistor;

[0027] The emitter of the second P-type transistor is grounded;

[0028] The collector of the second P-type transistor is electrically connected to the first end of the switch plate of the voltage response board.

[0029] Furthermore, the power delayer includes a first delay plate and a second delay plate;

[0030] The first delay plate is electrically connected to the first output terminal of the power delay plate of the voltage response plate;

[0031] The second delay plate is electrically connected to the second output terminal of the power delay plate of the voltage response plate;

[0032] The structure of the first delay plate is the same as that of the second delay plate.

[0033] Furthermore, the first delay board includes a NOT gate, an NPN MOSFET, and a flash diode;

[0034] The first output terminal of the power delay board of the voltage response board is electrically connected to the input terminal of the NOT gate;

[0035] The output terminal of the NOT gate is electrically connected to the gate of the NPN MOS transistor;

[0036] The drain of the NPN MOS transistor is electrically connected to the weak power supply of the voltage response board.

[0037] The source of the NPN MOS transistor is electrically connected to the positive terminal of the flash diode;

[0038] The negative terminal of the flash diode is grounded.

[0039] Furthermore, the first delay plate also includes a photoresistor, an electronic rheostat, an NPN type IGBT, and a PNP type IGBT;

[0040] The flash diode is attached to the outer peripheral surface of the photoresistor.

[0041] The weak power supply of the voltage response board is electrically connected to one end of the photosensitive rheostat.

[0042] The other end of the photosensitive rheostat is electrically connected to the signal terminal of the electronic rheostat.

[0043] The first output terminal of the electronic rheostat is electrically connected to the gate of the NPN type IGBT.

[0044] The second output terminal of the electronic rheostat is electrically connected to the gate of the PNP type IGBT.

[0045] Furthermore, the weak power supply of the voltage response board is electrically connected to the drain of the NPN type IGBT;

[0046] The source of the NPN type IGBT is electrically connected to the first receiving end of the energy output board of the voltage response board;

[0047] The source of the NPN IGBT is electrically connected to the drain of the PNP IGBT.

[0048] The source of the PNP type IGBT is electrically connected to the second receiving end of the energy output board of the voltage response board.

[0049] Furthermore, the power selector includes multiple selection plates;

[0050] Each selection panel has the same structure;

[0051] Each selection board is electrically connected to the voltage response board;

[0052] The selection panel includes a selection switch, a light-selecting diode, and a selection resistor;

[0053] The positive terminal of the light-selective diode is electrically connected to the weak power supply of the voltage response board;

[0054] The negative terminal of the light-selective diode is grounded;

[0055] The selection resistor is electrically connected to the connection link between the negative terminal of the light-selecting diode and the weak power supply of the voltage response board.

[0056] The selection switch is electrically connected to the connection link between the selection resistor and the weak power supply of the voltage response board.

[0057] Furthermore, the power selector also includes a phototransistor, a third P-type transistor, and a fourth P-type transistor;

[0058] The photosensitive tube is attached to the sidewall of the photosensitive diode;

[0059] The collector of the third P-type transistor is electrically connected to the weak power supply of the voltage response board.

[0060] The base of the third P-type transistor is electrically connected to the weak power supply of the voltage response board.

[0061] The photosensitive tube is electrically connected between the base of the third P-type transistor and the weak power supply of the voltage response board.

[0062] The emitter of the third P-type transistor and the base of the fourth P-type transistor;

[0063] The emitter of the fourth P-type transistor is grounded;

[0064] The collector of the fourth P-type transistor is electrically connected to the boost plate of the voltage response board.

[0065] This application relates to a high-frequency plasma power supply, which achieves strong-level response by selecting a voltage response board of a XILINX-AEC100 automotive-grade FPGA. Since the voltage used in the high-frequency plasma power supply exceeds 400 volts, the voltage response board of the XILINX-AEC100 automotive-grade FPGA can operate normally in high-voltage environments. An isolating switch, through its isolation function, transmits the operator's actions as a level signal to the voltage response board. To reduce the impact of voltage fluctuations in the boost converter, a power selector can pre-set the output power of the voltage response board. A power delayer fits the high impedance between the boost converter and the high-frequency electrosurgical unit to prevent sudden changes in output power. Attached Figure Description

[0066] Figure 1 This is a schematic diagram of the structural connection of a high-frequency plasma power supply provided in an embodiment of this application.

[0067] Figure 2 This is a schematic diagram showing the structural connection of a voltage response board, isolating switch, and power delayer for a high-frequency plasma power supply according to an embodiment of this application.

[0068] Figure 3 This is a schematic diagram showing the structural connection of a first isolation plate and a voltage response plate of a high-frequency plasma power supply provided in an embodiment of this application.

[0069] Figure 4 This is a schematic diagram of the structural connection of a power delayer and a voltage response board for a high-frequency plasma power supply provided in an embodiment of this application.

[0070] Figure 5 This is a schematic diagram showing the structural connection of a power selector and voltage response board for a high-frequency plasma power supply according to an embodiment of this application.

[0071] Figure label:

[0072] 100 - Voltage response board; 200 - Disconnecting switch; 210 - First disconnecting board; 211 - Switch;

[0073] 212 - Light Emitting Diode; 213 - Current Limiting Resistor; 214 - DC Power Supply; 215 - Phototube;

[0074] 216 - First P-type transistor; 217 - Second P-type transistor; 220 - Second isolation plate;

[0075] 230 - Third isolation plate; 300 - Boost converter; 400 - Power delayer; 410 - First delay plate;

[0076] 411 - NOT gate; 412 - NPN MOSFET; 413 - Flash diode; 414 - Photoresistor;

[0077] 415 - Electronic rheostat; 416 - NPN type IGBT; 417 - PNP type IGBT; 420 - Second delay plate;

[0078] 500 - Power selector; 510 - Selector board; 511 - Selector switch; 512 - Optical diode;

[0079] 513 - Select resistor; 514 - Select phototube; 515 - Third P-type transistor;

[0080] 516 - Fourth P-type transistor. Detailed Implementation

[0081] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the scope of this application.

[0082] This application provides a high-frequency plasma power supply.

[0083] like Figure 1 As shown, in one embodiment of this application, the high-frequency plasma power supply is electrically connected to a high-frequency electrosurgical unit. The high-frequency plasma power supply includes a voltage response board 100, an isolating switch 200, a boost converter 300, a power delayer 400, and a power selector 500.

[0084] The voltage response board 100 is electrically connected to the high-frequency electrosurgical unit.

[0085] The disconnect switch 200 is electrically connected to the voltage response board 100.

[0086] The booster 300 is electrically connected to the voltage response board 100, and the booster 300 is electrically connected to the disconnect switch 200.

[0087] The power delayer 400 is electrically connected to the voltage response board 100.

[0088] The power selector 500 is electrically connected to the voltage response board 100.

[0089] This embodiment relates to a high-frequency plasma power supply. A high-level response is achieved by selecting a voltage response board 100 (model XILINX-AEC100 automotive-grade FPGA). Since the voltage used in the high-frequency plasma power supply exceeds 400 volts, the voltage response board 100 (model XILINX-AEC100 automotive-grade FPGA) can operate normally in a high-voltage environment. The isolating switch 200, through isolation, transmits the operator's actions as a level signal to the voltage response board 100. To reduce the impact of voltage fluctuations in the boost converter 300, the power selector 500 can preset the output power of the voltage response board 100. The power delayer 400 fits the high impedance between the boost converter 300 and the high-frequency electrosurgical unit to prevent sudden changes in output power.

[0090] like Figure 2As shown, in one embodiment of this application, the disconnecting switch 200 includes a first disconnecting plate 210, a second disconnecting plate 220, and a third disconnecting plate 230. The first disconnecting plate 210 is electrically connected to a first end of the switch plate of the voltage response plate 100. The second disconnecting plate 220 is electrically connected to a second end of the switch plate of the voltage response plate 100. The second disconnecting plate 220 is also electrically connected to a power delay plate of the voltage response plate 100. The structures of the first disconnecting plate 210, the second disconnecting plate 220, and the third disconnecting plate 230 are identical.

[0091] Specifically, the voltage response board 100 can perform dual-level response, so the first end of the switch board of the voltage response board 100 is electrically connected to the first isolation board 210, and the second end of the switch board of the voltage response board 100 is electrically connected to the second isolation board 220. The third isolation board 230 is used to activate the power delay board of the voltage response board 100, so that the power delay board of the voltage response board 100 intervenes in the power fluctuation process during the external discharge process of the voltage response board 100.

[0092] like Figure 3 As shown, in one embodiment of this application, the first isolation plate 210 includes a switch 211, a light-emitting diode (LED) 212, a current-limiting resistor 213, and a DC power supply 214. The positive terminal of the LED 212 is electrically connected to the positive terminal of the DC power supply 214. The negative terminal of the LED 212 is electrically connected to the negative terminal of the DC power supply 214. The current-limiting resistor 213 is electrically connected to the connection link between the negative terminal of the LED 212 and the negative terminal of the DC power supply 214. The switch 211 is electrically connected to the connection link between the current-limiting resistor 213 and the negative terminal of the DC power supply 214.

[0093] In fact, in order to prevent the high-voltage arc discharge caused by voltage change during the discharge process of the voltage response board 100, the switch 211, light-emitting diode 212, current-limiting resistor 213 and DC power supply 214 of the first isolation board 210 form a low-voltage signal output structure. This is beneficial to protect the operator and can also improve the flexibility of the first isolation board 210 in the power fluctuation process during the discharge process of the voltage response board 100.

[0094] In one embodiment of this application, the first isolation plate 210 further includes a phototransistor 215, a first P-type transistor 216, and a second P-type transistor 217. The phototransistor 215 is attached to the sidewall of the light-emitting diode 212. The collector of the first P-type transistor 216 is electrically connected to the weak power supply of the voltage response plate 100. The base of the first P-type transistor 216 is electrically connected to the weak power supply of the voltage response plate 100. The phototransistor 215 is electrically connected between the base of the first P-type transistor 216 and the weak power supply of the voltage response plate 100. The emitter of the first P-type transistor 216 is connected to the base of the second P-type transistor 217. The emitter of the second P-type transistor 217 is grounded. The collector of the second P-type transistor 217 is electrically connected to the first terminal of the switch plate of the voltage response plate 100.

[0095] Specifically, the phototube 215 is attached to the sidewall of the light-emitting diode 212. When the phototube 215 receives a light source signal, its own resistance changes. When the resistance of the phototube 215 changes, the base voltage of the first P-type transistor 216 changes, thereby switching the first P-type transistor 216 on and off and the second P-type transistor 217 on and off.

[0096] The second P-type transistor 217 has a current amplification function. Under the action of the first P-type transistor 216 with current amplification, the second P-type transistor 217 can realize the input of the level signal of the switching board of the voltage response board 100, thereby enabling the operator to intervene in the power fluctuation process of the voltage response board 100 during external discharge.

[0097] like Figure 4 As shown, in one embodiment of this application, the power delayer 400 includes a first delay plate 410 and a second delay plate 420. The first delay plate 410 is electrically connected to a first output terminal of the power delay plate of the voltage response plate 100. The second delay plate 420 is electrically connected to a second output terminal of the power delay plate of the voltage response plate 100. The structure of the first delay plate 410 is the same as the structure of the second delay plate 420.

[0098] Specifically, the power delayer 400 introduces damping of different magnitudes into the subsequent inverter circuit, providing different impedance paths for the attenuation of the final output waveform.

[0099] In one embodiment of this application, the first delay plate 410 includes a NOT gate 411, an NPN MOSFET 412, and a flash diode 413. The first output terminal of the power delay plate of the voltage response plate 100 is electrically connected to the input terminal of the NOT gate 411. The output terminal of the NOT gate 411 is electrically connected to the gate of the NPN MOSFET 412. The drain of the NPN MOSFET 412 is electrically connected to the weak power supply of the voltage response plate 100. The source of the NPN MOSFET 412 is electrically connected to the anode of the flash diode 413. The cathode of the flash diode 413 is grounded.

[0100] Specifically, the flashing diode 413 is a light-emitting diode. The NOT gate 411 can be adapted to either a high-level or low-level signal from the voltage response board 100. The NPN MOSFET 412 can control the flashing frequency of the flashing diode 413 based on the signal output from the NOT gate 411. In practice, when the NPN MOSFET 412 receives a low level, the circuit of the flashing diode 413 is cut off. When the NPN MOSFET 412 receives a high level, the circuit of the flashing diode 413 is turned on.

[0101] In one embodiment of this application, the first delay plate 410 further includes a photoresistor 414, an electronic rheostat 415, an NPN IGBT 416, and a PNP IGBT 417. The flash diode 413 is attached to the outer peripheral surface of the photoresistor 414. The weak power supply of the voltage response plate 100 is electrically connected to one end of the photoresistor 414. The other end of the photoresistor 414 is electrically connected to the signal terminal of the electronic rheostat 415. The first output terminal of the electronic rheostat 415 is electrically connected to the gate of the NPN IGBT 416. The second output terminal of the electronic rheostat 415 is electrically connected to the gate of the PNP IGBT 417.

[0102] Specifically, the photoresistor 414 receives light of different brightness, resulting in different resistance values. When the resistance of the photoresistor 414 changes, the electronic rheostat 415 outputs different level signals at its first and second output terminals based on the different voltages received at the signal terminal, thereby realizing the push-pull function of the NPN IGBT 416 and the PNP IGBT 417.

[0103] In one embodiment of this application, the weak power supply of the voltage response board 100 is electrically connected to the drain of the NPN type IGBT 416. The source of the NPN type IGBT 416 is electrically connected to the first receiving terminal of the energy output board of the voltage response board 100. The source of the NPN type IGBT 416 is electrically connected to the drain of the PNP type IGBT 417. The source of the PNP type IGBT 417 is electrically connected to the second receiving terminal of the energy output board of the voltage response board 100.

[0104] The push-pull function of NPN type IGBT416 and PNP type IGBT417 latches the two delayed voltage values ​​of OUT1_2 with the last pulse of OUT1_P after each working cycle, and determines whether OUT1_2 is at a safe voltage by the width of the high pulse output of the optocoupler.

[0105] Normally, the optocoupler outputs a very narrow high pulse or remains constantly low; abnormally, the optocoupler outputs a very wide high pulse or remains constantly high. The preceding circuit will fully discharge approximately 5ms before the OUT1_P pulse stops.

[0106] like Figure 5 As shown, in one embodiment of this application, the power selector 500 includes a plurality of selection plates 510. Each selection plate 510 has the same structure. Each selection plate 510 is electrically connected to the voltage response plate 100. Each selection plate 510 includes a selection switch 511, a photodiode 512, and a selection resistor 513. The positive terminal of the photodiode 512 is electrically connected to the weak power supply of the voltage response plate 100. The negative terminal of the photodiode 512 is grounded. The selection resistor 513 is electrically connected to the connection link between the negative terminal of the photodiode 512 and the weak power supply of the voltage response plate 100. The selection switch 511 is electrically connected to the connection link between the selection resistor 513 and the weak power supply of the voltage response plate 100.

[0107] In one embodiment of this application, the photoselector 514215 is attached to the sidewall of the photoselector diode 512. The collector of the third P-type transistor 515 is electrically connected to the weak power supply of the voltage response board 100. The base of the third P-type transistor 515 is electrically connected to the weak power supply of the voltage response board 100. The photoselector 514215 is electrically connected between the base of the third P-type transistor 515 and the weak power supply of the voltage response board 100. The emitter of the third P-type transistor 515 is connected to the base of the fourth P-type transistor 516. The emitter of the fourth P-type transistor 516 is grounded. The collector of the fourth P-type transistor 516 is electrically connected to the boost plate of the voltage response board 100.

[0108] Specifically, the structure of the selection plate 510 is the same as that of the second isolation plate 220.

[0109] The photodiode 512 is a light-emitting diode, and the phototransistor 514215 is a phototransistor 215.

[0110] By selecting switch 511, different levels of DC voltage required for different output positions can be achieved.

[0111] The technical features of the above embodiments can be combined arbitrarily, and the execution order of the method steps is not restricted. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0112] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are specific and detailed, they should not be construed as limiting the scope of this patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this application should be determined by the appended claims.

Claims

1. A high frequency plasma power supply electrically connected to a high frequency electrosurgical instrument, characterized in that, include: The voltage response board is electrically connected to the high-frequency electrosurgical unit. The disconnect switch is electrically connected to the voltage response board; The boost converter is electrically connected to the voltage response board, and the boost converter is electrically connected to the disconnect switch; A power delayer is electrically connected to the voltage response board; A power selector is electrically connected to the voltage response board.

2. The high frequency plasma power source according to claim 1, characterized by The disconnecting switch includes a first disconnecting plate, a second disconnecting plate, and a third disconnecting plate; The first isolation plate is electrically connected to the first end of the switch plate of the voltage response plate; The second isolation plate is electrically connected to the second end of the switch plate of the voltage response plate; The third isolation plate is electrically connected to the power delay plate of the voltage response plate; The structures of the first isolation plate, the second isolation plate, and the third isolation plate are the same.

3. The high frequency plasma power source according to claim 2, characterized in that The first isolation plate includes a switch, a light-emitting diode, a current-limiting resistor, and a DC power supply; The positive terminal of the light-emitting diode is electrically connected to the positive terminal of the DC power supply; The negative terminal of the light-emitting diode is electrically connected to the negative terminal of the DC power supply; The current-limiting resistor is electrically connected to the connection link between the negative terminal of the light-emitting diode and the negative terminal of the DC power supply. The switch is electrically connected to the connection link between the current-limiting resistor and the negative terminal of the DC power supply.

4. The high frequency plasma power source according to claim 3, characterized in that, The first isolation plate also includes a phototransistor, a first P-type transistor, and a second P-type transistor; The phototube is attached to the sidewall of the light-emitting diode; The collector of the first P-type transistor is electrically connected to the weak power supply of the voltage response board. The base of the first P-type transistor is electrically connected to the weak power supply of the voltage response board. The phototube is electrically connected between the base of the first P-type transistor and the weak power supply of the voltage response board. The emitter of the first P-type transistor and the base of the second P-type transistor; The emitter of the second P-type transistor is grounded; The collector of the second P-type transistor is electrically connected to the first end of the switch plate of the voltage response board.

5. The high frequency plasma power source of claim 4, wherein, The power delayer includes a first delay plate and a second delay plate; The first delay plate is electrically connected to the first output terminal of the power delay plate of the voltage response plate; The second delay plate is electrically connected to the second output terminal of the power delay plate of the voltage response plate; The structure of the first delay plate is the same as that of the second delay plate.

6. The high frequency plasma power source of claim 5, wherein, The first delay board includes a NOT gate, an NPN MOSFET, and a flash diode; The first output terminal of the power delay board of the voltage response board is electrically connected to the input terminal of the NOT gate; The output terminal of the NOT gate is electrically connected to the gate of the NPN MOS transistor; The drain of the NPN MOS transistor is electrically connected to the weak power supply of the voltage response board. The source of the NPN MOS transistor is electrically connected to the positive terminal of the flash diode; The negative terminal of the flash diode is grounded.

7. The high frequency plasma power source of claim 6, wherein, The first delay plate also includes a photoresistor, an electronic rheostat, an NPN type IGBT, and a PNP type IGBT; The flash diode is attached to the outer peripheral surface of the photoresistor. The weak power supply of the voltage response board is electrically connected to one end of the photosensitive rheostat. The other end of the photosensitive rheostat is electrically connected to the signal terminal of the electronic rheostat. The first output terminal of the electronic rheostat is electrically connected to the gate of the NPN type IGBT. The second output terminal of the electronic rheostat is electrically connected to the gate of the PNP type IGBT.

8. The high frequency plasma power source of claim 7, wherein, The weak power supply of the voltage response board is electrically connected to the drain of the NPN type IGBT. The source of the NPN type IGBT is electrically connected to the first receiving end of the energy output board of the voltage response board; The source of the NPN IGBT is electrically connected to the drain of the PNP IGBT. The source of the PNP type IGBT is electrically connected to the second receiving end of the energy output board of the voltage response board.

9. The high frequency plasma power source of claim 8, wherein, The power selector includes multiple selection plates; Each selection panel has the same structure; Each selection board is electrically connected to the voltage response board; The selection panel includes a selection switch, a light-selecting diode, and a selection resistor; The positive terminal of the light-selective diode is electrically connected to the weak power supply of the voltage response board; The negative terminal of the light-selective diode is grounded; The selection resistor is electrically connected to the connection link between the negative terminal of the light-selecting diode and the weak power supply of the voltage response board. The selection switch is electrically connected to the connection link between the selection resistor and the weak power supply of the voltage response board.

10. The high frequency plasma power source of claim 9, wherein, The power selector also includes a phototransistor, a third P-type transistor, and a fourth P-type transistor; The photosensitive tube is attached to the sidewall of the photosensitive diode; The collector of the third P-type transistor is electrically connected to the weak power supply of the voltage response board. The base of the third P-type transistor is electrically connected to the weak power supply of the voltage response board. The photosensitive tube is electrically connected between the base of the third P-type transistor and the weak power supply of the voltage response board. The emitter of the third P-type transistor and the base of the fourth P-type transistor; The emitter of the fourth P-type transistor is grounded; The collector of the fourth P-type transistor is electrically connected to the boost plate of the voltage response board.

Images