Power module and power system

Abstract

The application provides a power module and a power system, the power module comprising: a substrate; a plurality of half-bridge power units connected in series and welded on the substrate, the plurality of half-bridge power units having the same structure; any half-bridge power unit comprising at least one temperature measuring device, at least two power semiconductor devices and at least two unidirectional conducting devices; when the half-bridge power unit comprises one temperature measuring device, two power semiconductor devices and two unidirectional conducting devices, the anode of the unidirectional conducting device is electrically connected to the first end of the power semiconductor device, the cathode of the unidirectional conducting device is electrically connected to the second end of the power semiconductor device, the first end of the temperature measuring device is used as a temperature sampling end, the two power semiconductor devices are a first power semiconductor device and a second power semiconductor device, the second end of the temperature measuring device is electrically connected to the first end of the first power semiconductor or the second power semiconductor, or the second end of the temperature measuring device is electrically connected to the second end of the first power semiconductor or the second power semiconductor.

Description

Technical Field

[0001] This application relates to the field of power electronics technology, and more specifically, to a power module and a power system. Background Technology

[0002] Power modules are widely used in power electronic equipment to achieve power switching control and energy conversion. To monitor the operating status of power devices, thermistors are often installed in power modules to collect temperature information during device operation, thereby assisting in temperature protection or dynamic control.

[0003] In the prior art, thermistors are usually set up as independent temperature sensors inside the power module, and the temperature-related voltage signal is led out to the temperature detection circuit or main control unit through two independent signal leads, which leads to complex wiring of the circuit structure. Utility Model Content

[0004] The main objective of this application is to provide a power module and a power system that at least solves the problem of complex wiring caused by the thermistor being independently led out with dual signal lines in the power module in the prior art.

[0005] To achieve the above objectives, according to one aspect of this application, a power module is provided, comprising: a substrate; a plurality of series-connected half-bridge power units, each of the half-bridge power units being respectively soldered onto the substrate, and the plurality of half-bridge power units having identical structures; wherein any one of the half-bridge power units includes: at least one temperature sensing device, at least two power semiconductor devices, and at least two unidirectional conducting devices; when the half-bridge power unit includes one temperature sensing device, two power semiconductor devices, and two unidirectional conducting devices, the positive terminal of the unidirectional conducting device is electrically connected to a first terminal of the power semiconductor device, and the negative terminal of the unidirectional conducting device is electrically connected to a second terminal of the power semiconductor device; the first terminal of the temperature sensing device serves as a first temperature sampling terminal; the two power semiconductor devices are respectively a first power semiconductor device and a second power semiconductor device; the second terminal of the temperature sensing device is electrically connected to the first terminal of the first power semiconductor device or the first terminal of the second power semiconductor device, or the second terminal of the temperature sensing device is electrically connected to the second terminal of the first power semiconductor device or the second power semiconductor device.

[0006] Optionally, when the half-bridge power unit includes a first temperature sensing device, a second temperature sensing device, two power semiconductor devices, and two unidirectional conducting devices, the first end of the first temperature sensing device or the second temperature sensing device serves as the first temperature sampling end, the first end of the other of the first temperature sensing device or the second temperature sensing device serves as the second temperature sampling end, the second end of the first temperature sensing device or the second temperature sensing device is electrically connected to the first end of the first power semiconductor device or the second power semiconductor device, and the second end of the other of the first temperature sensing device and the second temperature sensing device is electrically connected to the second end of the other of the first power semiconductor device and the second power semiconductor device.

[0007] Optionally, the power module further includes a plurality of first copper pours, each of which is soldered to the substrate. The first copper pour is a copper pour area at the first end of a power semiconductor device in any half-bridge power unit. The temperature sensing device is soldered to the first copper pour, thereby the second end of the power semiconductor device and the second end of the temperature sensing device are electrically connected through the first copper pour.

[0008] Optionally, the power module further includes a plurality of second copper pours, each of which is soldered to the substrate. The second copper pour is a copper pour area at the third end of a power semiconductor device in any of the half-bridge power units, and the second copper pour is used for electrical connection with the third end of the power semiconductor device.

[0009] Optionally, the unidirectional conducting device is a diode.

[0010] Optionally, the power semiconductor device is an IGBT or a MOSFET.

[0011] Optionally, the substrate is a direct copper-clad ceramic substrate.

[0012] Optionally, each of the temperature measuring devices includes multiple resistors connected in parallel or in series.

[0013] Optionally, the resistor may include a thermistor or an adjustable resistor.

[0014] According to another aspect of this application, a power system is provided, comprising: any of the power modules described above.

[0015] By applying the technical solution of this application, one end of the temperature sensing device is directly connected to one end of the power semiconductor device, and the other end of the temperature sensing device is used as the output end of the temperature sampling signal for connection to an external temperature detection module. Through the above method, only a single temperature signal line is needed to complete the transmission of the temperature acquisition signal. Compared with the existing technology where the thermistor needs to be wired separately to output the signal, this solution effectively reduces the number of leads and wiring complexity, improves the integration of the power module, significantly reduces the number of internal and external wirings, simplifies the circuit design of the temperature acquisition channel, reduces packaging costs, and solves the problem of complex wiring caused by the thermistor independently outputting two signal lines in existing power modules. Attached Figure Description

[0016] The accompanying drawings, which form part of this application, are used to provide a further understanding of this application. The illustrative embodiments and descriptions of this application are used to explain this application and do not constitute an undue limitation of this application. In the drawings:

[0017] Figure 1 A schematic diagram of a power module upper bridge thermistor layout topology provided in an embodiment of this application is shown;

[0018] Figure 2 A schematic diagram of the layout of an upper bridge thermistor of a power module according to an embodiment of this application is shown;

[0019] Figure 3 A schematic diagram of a power module lower bridge thermistor layout provided in an embodiment of this application is shown;

[0020] Figure 4 A schematic diagram of a power module lower bridge thermistor layout topology is shown according to an embodiment of this application;

[0021] Figure 5 A schematic diagram of the layout of the upper and lower bridge thermistors of a power module according to an embodiment of this application is shown.

[0022] Figure 6 A schematic diagram of the layout topology of the upper and lower bridge thermistors of a power module according to an embodiment of this application is shown.

[0023] Figure 7 A schematic diagram of a MOSFET power module thermistor layout according to an embodiment of this application is shown.

[0024] The above figures include the following reference numerals:

[0025] 100, substrate; 200, half-bridge power unit; 210, temperature sensing device; 211, first temperature sensing device; 212, second temperature sensing device; 220, power semiconductor device; 230, unidirectional conduction device; 300, first copper plating; 400, second copper plating. Detailed Implementation

[0026] It should be noted that, unless otherwise specified, the embodiments and features described in this application can be combined with each other. This application will now be described in detail with reference to the accompanying drawings and embodiments.

[0027] To enable those skilled in the art to better understand the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present application, and not all embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative effort should fall within the scope of protection of the present application.

[0028] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this application are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate for the embodiments of this application described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0029] As described in the background section, in the prior art, the thermistor in the power module has two independently led-out signal lines, which leads to complex wiring. In order to solve the above technical problems, the embodiments of this application provide a power module and a power system.

[0030] The technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention.

[0031] Embodiments of this application provide a power module, Figure 1 and Figure 2 A schematic diagram of a power module according to this application is shown as an example. Figure 1 and Figure 2 As shown, the power module described above includes:

[0032] substrate 100;

[0033] Specifically, all the components of the power module are soldered onto the aforementioned substrate, which serves to support the components, enable electrical connections, and facilitate heat conduction.

[0034] Multiple series-connected half-bridge power units 200 are provided, and each of the above-mentioned half-bridge power units 200 is respectively welded to the above-mentioned substrate 100. The structures of the multiple half-bridge power units 200 are all the same.

[0035] Each of the aforementioned half-bridge power units 200 includes: at least one temperature sensing device 210, at least two power semiconductor devices 220, and at least two unidirectional conducting devices 230.

[0036] In the case where the half-bridge power unit 200 includes one temperature sensing device 210, two power semiconductor devices 220, and two unidirectional conducting devices 230, the positive terminal of the unidirectional conducting device 230 is electrically connected to the first terminal of the power semiconductor device 220, the negative terminal of the unidirectional conducting device 230 is electrically connected to the second terminal of the power semiconductor device 220, the first terminal of the temperature sensing device 210 serves as the first temperature sampling terminal, the two power semiconductor devices 220 are respectively the first power semiconductor device and the second power semiconductor device, and the second terminal of the temperature sensing device 210 is electrically connected to the first terminal of the first power semiconductor device or the first terminal of the second power semiconductor device, or the second terminal of the temperature sensing device 210 is electrically connected to the second terminal of the first power semiconductor device or the second power semiconductor device.

[0037] Specifically, the first power semiconductor and the second power semiconductor respectively form a bridge structure with the corresponding unidirectional conducting device 230. The first terminal of the power semiconductor device 220 is the current output terminal, such as the emitter of an IGBT (Insulated Gate Bipolar Transistor, a type of power semiconductor device) and the source of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor, a type of voltage-controlled semiconductor device). The second terminal of the power semiconductor device 220 is the current input terminal, such as the collector of an IGBT and the drain of a MOSFET.

[0038] In this design, the first end of the temperature sensing device serves as a temperature sampling terminal, connected to an external sampling circuit. The second end of the temperature sensing device, depending on the temperature monitoring requirements, is connected to either the first or second end of the aforementioned first or second power semiconductor device, enabling the acquisition of temperature information from the heating zone of the power device. By embedding the temperature sensing device into the internal circuit path of the power device and utilizing existing soldering structures for shared connections, the number of device leads can be effectively reduced, the module wiring structure simplified, and the response speed and accuracy of temperature monitoring improved.

[0039] In the above embodiments, by integrating at least one temperature sensing device in each half-bridge power unit, one end of the temperature sensing device is directly connected to one end of the power semiconductor device, and the other end of the temperature sensing device serves as the output terminal of the temperature sampling signal for connection to an external temperature detection module. Through this method, only a single temperature signal line is needed to complete the transmission of the temperature acquisition signal. That is, the temperature acquisition circuit is integrated into the main power circuit path, eliminating the need for additional temperature signal lines and auxiliary connection terminals. Compared with the prior art where the thermistor needs to be wired separately to output the signal, this solution effectively reduces the number of leads and wiring complexity, improves the integration of the power module, significantly reduces the number of internal and external wirings, simplifies the circuit design of the temperature acquisition channel, reduces packaging costs, and solves the problem of complex wiring caused by the thermistor independently outputting dual signal lines in existing power modules.

[0040] Among them, such as Figure 1 and Figure 2 As shown, in the layout of the upper bridge thermistor, the second terminal of the temperature sensing device is electrically connected to the first terminal of the first power semiconductor or the second terminal of the second power semiconductor device; as Figure 3 and Figure 4 As shown, in the layout of the lower bridge thermistor, the second end of the temperature sensing device is electrically connected to the first end of the second power semiconductor.

[0041] It should also be noted that, in addition to the half-bridge module, the layout of the temperature sensing device proposed in this application can also be applied to the full-bridge and single-tube modules.

[0042] In one alternative, such as Figure 3 and Figure 4As shown, in the case where the half-bridge power unit 200 includes a first temperature sensing device 211, a second temperature sensing device 212, two power semiconductor devices 220, and two unidirectional conducting devices 230, the first end of the first temperature sensing device 211 or the second temperature sensing device 212 serves as the first temperature sampling end, and the first end of the other of the first temperature sensing device 211 or the second temperature sensing device 212 serves as the second temperature sampling end. The second end of the first temperature sensing device 211 or the second temperature sensing device 212 is electrically connected to the first end of the first power semiconductor device or the second power semiconductor device, and the second end of the other of the first temperature sensing device 211 and the second temperature sensing device 212 is electrically connected to the second end of the first power semiconductor device and the other of the second power semiconductor device.

[0043] In the above embodiments, a first temperature sensing device and a second temperature sensing device are respectively set in the critical heat-generating area of ​​the power semiconductor device in each half-bridge power unit. The first ends of the two temperature sensing devices serve as the first temperature sampling end and the second temperature sampling end, respectively, and are led out to an external sampling circuit, thereby realizing the discrete acquisition of temperature information of the upper and lower bridge power devices. This structure covers the independent thermal distribution state of different power devices during actual operation, while avoiding the error accumulation caused by only collecting the temperature rise of one bridge arm in traditional solutions, effectively improving the coverage and response sensitivity of temperature sampling. Through the above electrical connection relationship, the actual operating temperature of the upper and lower bridge devices can be collected separately, avoiding the error caused by using only one sensor to collect the temperature rise of the entire bridge. Compared to existing technologies that use only one power semiconductor in a half-bridge power unit to collect temperature data for the entire bridge arm, this solution sets up a first temperature sensing device and a second temperature sensing device in each half-bridge power unit. These devices are positioned at the critical heat-generating locations of the first and second power semiconductor devices, respectively, and each has two temperature sampling terminals. This allows for independent temperature monitoring of the upper and lower bridge devices, improving sampling coverage and sensitivity. The temperature sampling signal is directly output from one end of the temperature sensing device, eliminating the need for additional sampling channels on the power devices and simplifying the internal connection structure of the module.

[0044] Specifically, one end of one temperature sensing device serves as the first temperature sampling terminal, and one end of the other temperature sensing device serves as the second temperature sampling terminal. That is, each of the two thermistors has a signal line leading out to measure the temperatures of the two upper and lower bridges, respectively. The second end of the temperature sensing device is connected to the electrode of the power semiconductor device; it can be connected to the first end of either the first or second power device. Figure 5 and Figure 6As shown, a thermistor is placed as the first temperature measuring device 211 on the copper layer of the emitter of the upper half-bridge, and a thermistor is placed as the second temperature measuring device 212 on the copper layer of the emitter of the lower half-bridge. This enables accurate monitoring of the temperature of the power semiconductor chip in the upper and lower half-bridge.

[0045] In some exemplary embodiments of this application, such as Figure 6 As shown, the power module further includes a plurality of first copper pours 300, each of which is soldered to the substrate. The first copper pour 300 is a copper pour area at the first end of one of the power semiconductor devices in any of the half-bridge power units 200. The temperature sensing device is soldered to the first copper pour 300, thereby the second end of the power semiconductor device and the second end of the temperature sensing device are electrically connected through the first copper pour 300.

[0046] In the above embodiments, by sharing the same copper foil area, the current path of the power semiconductor device and the temperature acquisition circuit are integrated on the substrate, avoiding the instability caused by long-distance flying wire connections or external lead wiring, and improving the integration and structural stability of the module. Furthermore, since the temperature sensing device and the power semiconductor device are adjacent and electrically connected to the same copper foil area, the temperature acquisition device can more directly and in real-time sense the local heat changes of the power device during operation, thereby obtaining more accurate temperature rise information. This near-field thermal sensing layout helps to build a closed-loop temperature control system based on actual heat load, improving overall thermal management efficiency. In traditional solutions, the temperature acquisition resistor needs to be connected to the power device through independent wires, which not only increases the wiring length but also increases the number of solder joints and assembly difficulty. In this embodiment, by using the first copper foil as a common connection platform, the wiring and multi-point soldering layout are simplified, which is beneficial for standardized design and mass production, and also reduces process errors and maintenance workload. Because copper foil itself has excellent electrical and thermal conductivity, as a connection medium, it can ensure low impedance transmission in the power path, reduce heat generation and voltage drop, and can also quickly conduct the heat generated during device operation to the substrate, which helps to alleviate local overheating, balance heat distribution, reduce the risk of local hot spots, and improve the stability and reliability of device operation. Furthermore, since the thermistor is closer to the power device, it can effectively improve the accuracy of temperature acquisition of the power device.

[0047] Specifically, the first copper layer mentioned above is the conductive area of ​​the copper foil.

[0048] In some further exemplary embodiments of this application, such as Figure 6As shown, the power module further includes a plurality of second copper pours 400, each of which is soldered to the substrate. The second copper pour 400 is a copper pour area at the third end of one of the power semiconductor devices in any of the half-bridge power units, and the second copper pour 400 is used to electrically connect to the third end of the power semiconductor device.

[0049] In the above embodiments, each half-bridge power unit of the power module is equipped with a power semiconductor device. The third terminal of the power semiconductor device serves as a control terminal, receiving control signals from the external drive circuit to achieve precise control over the device's on / off state. The transmission path of this control signal must possess good electrical connection performance and anti-interference capability to ensure reliable operation of the device in high-frequency, high-power environments. To achieve the above functions, the second copper-plated area in this embodiment serves as a transmission channel for the gate control signal, connecting the third terminal of the power semiconductor device to the upper-level control system. The second copper-plated area achieves physical connection and electrical conduction with the third terminal of the power chip through soldering or bonding. Thus, external drive signals can be introduced into the chip through the second copper-plated area to control its conduction state, ensuring the real-time response of the drive logic and the accuracy of voltage control. Furthermore, the control signal is completely isolated from the main current path, avoiding the impact of electromagnetic interference generated during high-current switching in the main power circuit on the drive signal and improving the system's electromagnetic compatibility. On the other hand, the second copper-plated area has clear functional partitions and does not intersect or overlap with the main power copper foil path, which helps to achieve neat and standardized internal wiring of the module. In practical applications such as high-frequency switching power supplies, frequency converters, photovoltaic inverters, and electric vehicle power modules, the switching accuracy of devices directly affects the system's conversion efficiency and stability. Instability, delays, or crosstalk in the control signal path can easily lead to device mis-conduction, runaway, and other malfunctions. This solution, by setting a second copper-plated area, effectively ensures the low impedance and low stray inductance transmission characteristics of the control signal channel. Different widths and shapes can be configured according to design requirements to match the characteristic impedance requirements of the drive circuit, thereby achieving high-precision and high-reliability control of the device's switching behavior.

[0050] Specifically, the third terminal of the aforementioned power semiconductor device is the control terminal of the power semiconductor device, such as the gate of a MOSFET and the gate of an IGBT.

[0051] In one alternative, the aforementioned unidirectional conducting device is a diode.

[0052] In the above embodiments, the diode has two electrodes: a positive terminal and a negative terminal. It conducts in the forward direction and cuts off in the reverse direction. In the circuit, it is connected in parallel with the power semiconductor device to form a freewheeling path or a protective structure to suppress voltage backlash. When the power semiconductor device is turned off, a reverse voltage spike may be generated due to the inductive load. The diode can quickly turn on, providing a freewheeling path; effectively preventing the device from being broken down by reverse voltage and improving system reliability. The diode has fast conduction characteristics, immediately taking over the current the instant the current reverses, reducing dead time. Compared with expensive or complex unidirectional devices, such as Schottky diodes and IGCTs, it offers high cost-effectiveness, strong packaging compatibility, and is suitable for mass production and maintenance.

[0053] In another alternative, the aforementioned power semiconductor device is an IGBT or a MOSFET.

[0054] In the above embodiments, IGBTs are suitable for medium-to-high voltage and high-current applications, featuring low on-state voltage drop and high load capacity, making them particularly suitable for medium-to-high power systems such as inverters, motor drives, and frequency converters. MOSFETs, on the other hand, are more suitable for low-voltage and high-frequency operating environments, possessing advantages such as fast switching speed, low conduction loss, and low drive power consumption. They are commonly used in server power supplies, high-frequency pulse width modulation circuits, and other applications. By using IGBTs or MOSFETs as the power semiconductor devices in this structure, the devices can be flexibly selected according to different application scenarios, improving system adaptability and scalability, and achieving high-efficiency power switching control.

[0055] Specifically, such as Figure 7 As shown, the second terminal of the temperature measuring device 210 is electrically connected to the source of one of the power semiconductor devices 220 when it is a MOSFET, and the MOSFET is connected in parallel with the unidirectional conducting device 230.

[0056] In some exemplary embodiments, the substrate is a direct copper-clad ceramic substrate.

[0057] In the above embodiments, the direct copper-clad ceramic substrate is directly laminated with a high thermal conductivity copper layer onto the surface of a ceramic insulating layer, such as alumina or aluminum nitride, using a high-temperature process, resulting in excellent thermal conductivity and electrical insulation properties. Using a direct copper-clad ceramic substrate in this power module helps to quickly dissipate the heat generated by the power semiconductor devices during operation, reducing junction temperature and improving system heat dissipation efficiency. Simultaneously, the direct copper-clad ceramic substrate has high mechanical strength and a well-matched coefficient of thermal expansion, which can mitigate thermal stress damage to solder joints, improving the structural reliability and lifespan of the power module. The use of a direct copper-clad ceramic substrate in this power module structure offers several technical advantages. Firstly, the copper layer in the substrate is relatively thick, possessing extremely high lateral thermal conductivity, enabling rapid conduction of heat generated during the operation of the power semiconductor devices from the junction region to the substrate surface, and further dissipation through external heat dissipation devices, effectively reducing junction temperature, preventing device overheating failure, and improving the thermal cycle life of the power module and the stability of the system. Furthermore, the ceramic material used in the copper-clad ceramic substrate has a thermal expansion coefficient close to that of silicon chips, which can effectively alleviate thermal stress mismatch between devices, solder joints, and the substrate during high and low temperature cycles, reducing the risks of solder cracks, cold solder joints, and thermal fatigue. This structural characteristic significantly improves the long-term reliability and mechanical strength of the module under harsh operating conditions. At the same time, the copper-clad ceramic substrate has good surface machinability and wiring capabilities, supports wide copper strip designs for high current paths, and allows for pre-definition of conduction paths, soldering areas, and copper plating areas according to the functional layout of different half-bridge power units. This facilitates the integration of auxiliary functional circuits such as temperature acquisition and signal feedback, further improving the module's integration and wiring optimization capabilities.

[0058] In other exemplary embodiments, each of the above-mentioned temperature measuring devices includes a plurality of resistors connected in parallel or in series.

[0059] In the above embodiments, each of the aforementioned temperature sensing devices includes multiple resistors connected in parallel or series. These resistors form a resistor network, offering greater flexibility and stability. Firstly, the series or parallel connection of the resistors allows for flexible configuration of the voltage division ratio based on the heating level, temperature distribution characteristics, and sampling accuracy requirements of the power semiconductor devices in the actual application. This ensures that the temperature signal voltage falls more accurately within the operating range of the analog-to-digital conversion module, thereby improving the sensitivity of the temperature acquisition system. Furthermore, in the parallel structure, multiple resistors share the current load under the same voltage, reducing the power consumption and heat generation on each resistor, thus improving the thermal stability and lifespan of the device. In addition, uniform heat load distribution helps prevent solder joint fatigue or thermal expansion stress from damaging the substrate, improving the mechanical reliability of the structure. In the series structure, multiple resistors sequentially bear the total voltage, so that each resistor only needs to withstand a portion of the voltage drop. This structure is particularly suitable for temperature sampling under high voltage differential scenarios, preventing breakdown or failure of a single resistor due to insufficient withstand voltage, and enhancing the insulation safety and long-term reliability of the system.

[0060] In one alternative, the resistor may include a thermistor or an adjustable resistor.

[0061] In the above embodiments, multiple resistors are combined in series or parallel to form a temperature sensing device. This allows for flexible adjustment of the overall equivalent resistance and voltage division ratio to meet the thermal response characteristics of different power semiconductor devices at different operating temperatures. For example, in high-temperature environments, to improve temperature detection sensitivity, a thermistor and a fixed resistor can be connected in series to obtain a nonlinear response curve. In normal or low-temperature scenarios, the sensitivity curve can be adjusted by parallel resistors of different resistance values, making temperature sampling more accurate and stable. Compared to a single resistor, parallel connection of multiple resistors achieves current shunting and power sharing, thereby reducing the actual current flow of each resistor and alleviating its thermal load. This design is particularly suitable for temperature acquisition circuits operating under high current conditions, reducing localized heating, delaying thermal failure, and extending the lifespan of the resistor. Furthermore, in high-voltage applications, using multiple resistors in series to form a temperature sensing device can evenly distribute the voltage, preventing a single resistor from bearing the entire voltage drop, thus reducing the risk of breakdown. Especially under conditions where modular power units experience transient voltage spikes or strong interference, the series structure helps stabilize voltage division, enhances electrical isolation performance, and improves the overall electrical reliability and safety of the system. The parallel resistor structure has advantages in uniform heat distribution; multiple resistors share the heat power simultaneously, reducing temperature gradients and preventing device damage caused by heat concentration. The series structure reduces thermocouple interference, improves the consistency and stability of temperature acquisition signals, and plays a positive role in improving the overall thermal stability of the power module and reducing temperature drift errors. Using multiple resistors in parallel or series to form a temperature sensing device enhances the application flexibility of this power module in complex thermal environments.

[0062] Embodiments of this application also provide a power system, including any of the power modules described above.

[0063] In the above embodiments, by directly integrating the power module with temperature acquisition function into the power system, real-time monitoring of the temperature of the power device can be achieved, avoiding the dispersed arrangement of temperature monitoring circuits. In addition, by directly connecting one end of the temperature measuring device to one end of the power semiconductor device, and using the other end of the temperature measuring device as the output end of the temperature sampling signal for connection to the external temperature detection module, the wiring method that requires independent leads for each thermistor in the traditional solution is avoided. As a result, the power system is more concise in structure, significantly reducing the number of connections between the control board and the power module, reducing the complexity of system wiring and assembly difficulty, and improving the assembly efficiency and maintenance convenience of the whole machine. It is particularly suitable for compact and highly integrated power electronics application scenarios.

[0064] The above description is merely a preferred embodiment of this application and is not intended to limit this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A power module, characterized in that, include: substrate(100); Multiple series-connected half-bridge power units (200) are connected, and each half-bridge power unit (200) is welded to the substrate (100). The structures of the multiple half-bridge power units (200) are all the same. Each of the aforementioned half-bridge power units (200) includes: at least one temperature sensing device (210), at least two power semiconductor devices (220), and at least two unidirectional conducting devices (230). In the case where the half-bridge power unit (200) includes one temperature sensing device (210), two power semiconductor devices (220), and two unidirectional conducting devices (230), the positive terminal of the unidirectional conducting device (230) is electrically connected to the first terminal of the power semiconductor device (220), the negative terminal of the unidirectional conducting device (230) is electrically connected to the second terminal of the power semiconductor device (220), the first terminal of the temperature sensing device (210) serves as the first temperature sampling terminal, the two power semiconductor devices (220) are respectively the first power semiconductor device and the second power semiconductor device, the second terminal of the temperature sensing device (210) is electrically connected to the first terminal of the first power semiconductor device or the first terminal of the second power semiconductor device, or the second terminal of the temperature sensing device (210) is electrically connected to the second terminal of the first power semiconductor device or the second power semiconductor device.

2. The power module according to claim 1, characterized in that, In the case where the half-bridge power unit (200) includes a first temperature measuring device (211), a second temperature measuring device (212), two power semiconductor devices (220), and two unidirectional conducting devices (230), the first end of the first temperature measuring device (211) or the second temperature measuring device (212) serves as the first temperature sampling end, and the first end of the other of the first temperature measuring device (211) or the second temperature measuring device (212) serves as the second temperature sampling end. The second end of the first temperature measuring device (211) or the second temperature measuring device (212) is electrically connected to the first end of the first power semiconductor device or the second power semiconductor device. The second end of the other of the first temperature measuring device (211) and the second temperature measuring device (212) is electrically connected to the second end of the other of the first power semiconductor device and the second power semiconductor device.

3. The power module according to claim 2, characterized in that, The power module further includes a plurality of first copper pours (300), each of which is soldered to the substrate (100). The first copper pour (300) is a copper pour area at the first end of a power semiconductor device (220) in any half-bridge power unit (200). The temperature measuring device (210) is soldered to the first copper pour (300), thereby the second end of the power semiconductor device (220) and the second end of the temperature measuring device (210) are electrically connected through the first copper pour (300).

4. The power module according to claim 2, characterized in that, The power module further includes a plurality of second copper pours (400), each of which is soldered to the substrate (100). The second copper pour (400) is a copper pour area at the third end of one of the power semiconductor devices (220) in any of the half-bridge power units (200), and the second copper pour (400) is used to electrically connect to the third end of the power semiconductor device (220).

5. The power module according to claim 1, characterized in that, The unidirectional conducting device (230) is a diode.

6. The power module according to claim 1, characterized in that, The power semiconductor device (220) is an IGBT or a MOSFET.

7. The power module according to claim 1, characterized in that, The substrate (100) is a direct copper-clad ceramic substrate.

8. The power module according to claim 1, characterized in that, Each of the temperature measuring devices (210) includes multiple resistors connected in parallel or in series.

9. The power module according to claim 8, characterized in that, The resistor includes a thermistor or an adjustable resistor.

10. A power system, characterized in that, include: The power module according to any one of claims 1 to 9.

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