Resonator filter structure, filter and electronic device
Patent Information
- Application Number
- CN202522171746.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-10-14
- Publication Date
- 2026-09-04
- Estimated Expiration
- 2035-10-14
AI Technical Summary
[0004]有鉴于此，本实用新型的目的在于提供一种谐振器滤波器结构、滤波器及电子设备，以克服目前相关器件面积大制备复杂的问题
[0015] This application provides a resonator filter structure, including a substrate and a circuit structure integrated on one side of the substrate. The substrate includes a resonator region and a capacitor region. The resonator region is provided with a resonator circuit structure, and the capacitor region is provided with a capacitor structure. The acoustic mirror in the resonator circuit structure and the dielectric layer of the capacitor structure are made of the same material. One electrode layer of the capacitor structure is interconnected with one electrode layer of the resonator circuit structure, and both are formed by deposition through the same deposition process followed by patterning. This configuration, by integrating the capacitor onto a substrate such as a silicon wafer and coexisting with the resonator, not only reduces the occupied area but also lowers the cost and reduces the area of the device including this structure, increasing integration density and thus meeting designs with higher area requirements. The interconnection of one electrode layer of the capacitor structure with one electrode layer of the resonator circuit structure, and their formation through deposition through the same deposition process followed by patterning, reduces process complexity and saves costs.
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Figure CN224721859U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of circuit technology, specifically to a resonator filter structure, filter, and electronic device. Background Technology
[0002] In the prior art, circuits involving capacitors and resonators are generally integrated together on a substrate. However, this approach results in a large area occupied by the capacitors and resonators, which in turn increases the overall area of the device or circuit, failing to meet the design requirements with high area constraints.
[0003] The fabrication process is complex if the capacitor and resonator are simply fabricated on the same substrate. Utility Model Content
[0004] In view of this, the purpose of this utility model is to provide a resonator filter structure, filter and electronic device to overcome the problems of large area and complicated fabrication of current related devices.
[0005] To achieve the above objectives, the present invention adopts the following technical solution: In a first aspect, embodiments of this application provide a resonator filter structure, including a substrate and a circuit structure integrated on one side of the substrate; The substrate includes a resonator region and a capacitor region; The resonator region is provided with a resonator circuit structure, and the capacitor region is provided with a capacitor structure. The acoustic mirror in the resonator circuit structure and the capacitor dielectric layer of the capacitor structure are made of the same material. One electrode layer of the capacitor structure is interconnected with one electrode layer of the resonator circuit structure, and they are formed by deposition through the same deposition process followed by patterning.
[0006] In some embodiments, the resonator circuit structure includes at least two resonator units; each resonator unit includes an acoustic mirror, a lower resonator electrode layer, a piezoelectric layer and an upper resonator electrode layer distributed sequentially along a first direction, wherein the first direction is perpendicular to the substrate surface and away from the substrate surface; The capacitor structure includes at least one pair of capacitor units, each capacitor unit including a lower capacitor electrode layer, a capacitor dielectric layer and an upper capacitor electrode layer distributed sequentially along the first direction.
[0007] In some embodiments, the lower electrode layer of the capacitor unit and the upper electrode layer of the resonant unit are interconnected and are formed by deposition through the same deposition process followed by patterning.
[0008] In some embodiments, the lower electrode layer of the capacitor unit and the lower electrode layer of the resonant unit are interconnected and are formed by deposition through the same deposition process followed by patterning.
[0009] In some embodiments, there are two resonant units and a pair of capacitor units; the first resonant unit, the first capacitor unit, the second capacitor unit, and the second resonant unit are arranged sequentially along a second direction, which is parallel to the substrate.
[0010] In some embodiments, the lower electrode layer of the first capacitor unit is interconnected with the upper electrode layer of the first resonant unit; The lower electrode layer of the second capacitor unit is connected to the upper electrode layer of the second resonant unit.
[0011] In some embodiments, the lower electrode layer of the first capacitor unit is interconnected with the lower electrode layer of the first resonant unit; The lower electrode layer of the second capacitor unit is connected to the lower electrode layer of the second resonant unit.
[0012] In some embodiments, the upper electrode layer of the first capacitor unit is connected to the upper electrode layer of the second capacitor unit.
[0013] This application also provides a filter, including the resonator filter structure as described above.
[0014] This application also provides an electronic device including the filter as described above.
[0015] This application provides a resonator filter structure, including a substrate and a circuit structure integrated on one side of the substrate. The substrate includes a resonator region and a capacitor region. The resonator region is provided with a resonator circuit structure, and the capacitor region is provided with a capacitor structure. The acoustic mirror in the resonator circuit structure and the dielectric layer of the capacitor structure are made of the same material. One electrode layer of the capacitor structure is interconnected with one electrode layer of the resonator circuit structure, and both are formed by deposition through the same deposition process followed by patterning. This configuration, by integrating the capacitor onto a substrate such as a silicon wafer and coexisting with the resonator, not only reduces the occupied area but also lowers the cost and reduces the area of the device including this structure, increasing integration density and thus meeting designs with higher area requirements. The interconnection of one electrode layer of the capacitor structure with one electrode layer of the resonator circuit structure, and their formation through deposition through the same deposition process followed by patterning, reduces process complexity and saves costs. Attached Figure Description
[0016] The above and other objects, features, and advantages of this application will become more apparent from the more detailed description of the embodiments of this application in conjunction with the accompanying drawings. The drawings are provided to further illustrate the embodiments of this application and form part of the specification. They are used together with the embodiments of this application to explain this application and do not constitute a limitation thereof. In the drawings, the same reference numerals generally represent the same components or steps.
[0017] Figure 1 This application is one Figure 1 This is a cross-sectional schematic diagram of the resonator filter structure provided in this embodiment of the utility model; Figure 2 This application is one Figure 1 This is a top view of the resonator filter structure provided in this embodiment of the present invention; Figure 3 This application is one Figure 1 This is a top view of a resonator filter structure provided in another embodiment of the present invention; Figure 4-11 This is a schematic flowchart of the resonator filter structure fabrication method provided in this embodiment of the utility model; Figure 12-18 This is a flowchart illustrating another method for fabricating a resonator filter structure provided in this embodiment of the present invention.
[0018] Figure label: 101-Substrate; 102-Lower electrode of resonator; 103-Acoustic mirror; 104-Piezoelectric layer; 105-Powered resonator; 109-Lower electrode of capacitor; 110-Sacrificial layer. Detailed Implementation
[0019] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.
[0020] Reference Figures 1 to 3 The resonator filter structure provided in this application includes Includes a substrate and a circuit structure integrated on one side of the substrate; The substrate includes a resonator region and a capacitor region; The resonator region is provided with a resonator circuit structure, and the capacitor region is provided with a capacitor structure. The acoustic mirror in the resonator circuit structure and the capacitor dielectric layer of the capacitor structure are made of the same material. One electrode layer of the capacitor structure is interconnected with one electrode layer of the resonator circuit structure, and they are formed by deposition through the same deposition process followed by patterning.
[0021] Specifically, in this application, the substrate material can be selected from single-crystal silicon, gallium nitride, gallium arsenide, sapphire, quartz, silicon carbide, or diamond, etc.
[0022] The substrate can be divided into a resonator region and a capacitor region, which are used to house the resonator structure and the capacitor structure, respectively (of course, in some embodiments, other regions besides the resonator region and capacitor region are also included, such as the connection region between the two and other regions). It should be noted that in this application, the resonator structure may not be entirely located within the resonator region, but may be located in other regions. The relationship between the capacitor structure and the capacitor region is similar, as detailed below. Figure 1 As shown. By integrating the capacitor onto a substrate such as a silicon wafer, coexisting with the resonator, not only can the footprint be reduced, but also the cost can be lowered, and the area of the device including this structure can be reduced, increasing the integration density and thus meeting designs with higher area requirements. The acoustic mirror in the resonator circuit structure and the capacitor dielectric layer of the capacitor structure are both air, a dielectric with low loss and high Q value. One electrode layer of the capacitor structure is interconnected with one electrode layer of the resonator circuit structure, and they are formed through the same deposition process followed by patterning, thus reducing process complexity and saving costs.
[0023] Specifically, the resonator circuit structure includes at least two resonant units; each resonant unit includes an acoustic mirror, a lower resonator electrode layer, a piezoelectric layer and an upper resonator electrode layer arranged sequentially along a first direction, wherein the first direction is perpendicular to the substrate surface and away from the substrate surface; The capacitor structure includes at least one pair of capacitor units, each capacitor unit including a lower capacitor electrode layer, a capacitor dielectric layer and an upper capacitor electrode layer distributed sequentially along the first direction.
[0024] Furthermore, if there are two resonant units and a pair of capacitor units; the first resonant unit, the first capacitor unit, the second capacitor unit, and the second resonant unit are arranged sequentially along a second direction, which is parallel to the substrate.
[0025] It should be noted that in some cases, multiple resonant units and multiple sets of paired capacitor units can be set, and the actual number of resonant units and capacitor units can be adjusted based on actual needs. For example, in some cases, there may be only one resonant unit and two capacitor units.
[0026] In some embodiments, the lower electrode layer of the capacitor unit and the upper electrode layer of the resonant unit are interconnected and are formed by deposition through the same deposition process followed by patterning.
[0027] Specifically, the lower electrode layer of the first capacitor unit is connected to the upper electrode layer of the first resonant unit; the lower electrode layer of the second capacitor unit is connected to the upper electrode layer of the second resonant unit.
[0028] In this configuration, the upper electrode layer of the resonator and the lower electrode layer of the capacitor are continuous during the deposition process. They are patterned into independent functional layers using photolithography and etching processes, while ensuring electrical connectivity in specific areas. Typically, the upper electrode layer of the resonator and the lower electrode layer of the capacitor require separate deposition and patterning, increasing the number of process steps and complexity. This invention forms these two layers through a single deposition process, reducing the number of deposition and patterning steps and simplifying the process. Forming them through a single deposition process ensures consistency in material properties and thickness, improving the stability of electrical performance. Continuous deposition and patterning ensure a reliable connection between the upper electrode layer of the resonator and the lower electrode layer of the capacitor. In summary, forming the upper electrode layer of the resonator and the lower electrode layer of the capacitor through a single deposition process, ensuring their reliable connection, not only simplifies the process but also improves performance consistency and reliability, reduces manufacturing costs and losses, and has significant technical advantages.
[0029] In some embodiments, the lower electrode layer of the capacitor unit and the lower electrode layer of the resonant unit are interconnected and are formed by deposition through the same deposition process followed by patterning.
[0030] Specifically, the lower electrode layer of the first capacitor unit is interconnected with the lower electrode layer of the first resonant unit; The lower electrode layer of the second capacitor unit is connected to the lower electrode layer of the second resonant unit.
[0031] In this configuration, the resonator lower electrode layer and the capacitor lower electrode layer are continuous during deposition. They are patterned into independent functional layers using photolithography and etching processes, while ensuring electrical connectivity in specific areas. Typically, the resonator lower electrode layer and the capacitor lower electrode layer require separate deposition and patterning, increasing process steps and complexity. This invention forms these two layers through a single deposition process, reducing the number of deposition and patterning steps and simplifying the process. Forming them through a single deposition process ensures consistency in material properties and thickness, improving the stability of electrical performance. Continuous deposition and patterning ensure a reliable connection between the resonator lower electrode layer and the capacitor lower electrode layer. In summary, forming the resonator lower electrode layer and the capacitor lower electrode layer through a single deposition process, ensuring their reliable connection, not only simplifies the process but also improves performance consistency and reliability, reduces manufacturing costs and losses, and has significant technical advantages.
[0032] Furthermore, in some embodiments, the upper electrode layer of the first capacitor unit is connected to the upper electrode layer of the second capacitor unit.
[0033] In some embodiments, the upper electrode layers of the first and second capacitor units are interconnected and formed by deposition followed by patterning in the same deposition process. This configuration ensures that the upper electrode layers of the first and second capacitor units are continuous during deposition, patterned into independent functional layers using photolithography and etching processes, while maintaining electrical connectivity in specific regions. Typically, the upper electrode layers of the first and second capacitor units require separate deposition and patterning, increasing process steps and complexity. This invention forms these two layers using the same deposition process, reducing the number of deposition and patterning steps and simplifying the process; the same deposition process ensures consistency in material properties and thickness, improving the stability of electrical performance; continuous deposition and patterning ensure reliable connection between the upper electrode layers of the first and second capacitor units; and the signal extraction from the capacitor electrodes is simplified, making the process simpler. In summary, forming the capacitor top electrode layer of the first capacitor unit and the capacitor top electrode layer of the second capacitor unit through the same deposition process and ensuring their reliable connection not only simplifies the process flow but also improves performance consistency and reliability, and reduces manufacturing costs and losses, demonstrating significant technical advantages.
[0034] Furthermore, along a third direction parallel to the substrate surface, the two sides of the upper electrode of the capacitor unit can overlap the substrate; wherein, the third direction is perpendicular to the second direction. In this way, the substrate supports the two sides of the upper electrode of the capacitor unit, preventing the upper electrode of the capacitor unit from collapsing. Specifically, the substrate can protrude at locations corresponding to the two sides of the upper electrode of the capacitor unit to support the two sides of the upper electrode; alternatively, the two sides of the upper electrode of the capacitor unit can be bent towards the substrate to overlap it.
[0035] In some embodiments, refer to Figures 4 to 11 The fabrication method of the resonator filter structure is as follows: including: 1. A recess is formed in the resonator region of substrate 101 by photolithography and etching processes; wherein, the plane of the substrate used to form the recess is a first plane; and the plane opposite to the first plane is a second plane; Specifically, photolithography and etching are performed on a silicon wafer to obtain, for example... Figure 4 The structure.
[0036] 2. Figure 4 A sacrificial layer 110 is deposited on the structure, and obtained by chemical physical grinding, as shown in the figure. Figure 5 The structure; 3. Deposit 102 layers of the lower electrode of the resonator, and pattern the lower electrode of the resonator through photolithography and etching, such as... Figure 6 ; 4. Deposit a piezoelectric thin film 104, such as Figure 7 5. A 105-layer upper electrode is deposited on the resonator, and the upper electrode is patterned by photolithography and etching, while the lower electrode of the capacitor is formed, resulting in the following: Figure 8 structure 6. Deposit 110 layers of capacitor sacrificial layer, and pattern the sacrificial layer through photolithography and etching to obtain the following... Figure 9 structure 7. The capacitor top electrode 109 is deposited using a liftoff process to obtain the following: Figure 10 structure 8. Release the sacrificial layer 110 and the capacitor sacrificial layer 110 to obtain the acoustic mirror 103 and the capacitor dielectric cavity, as shown. Figure 11 .
[0037] In some embodiments, refer to Figures 12 to 18 Other methods for fabricating resonator filter structures include:
[0038] 1. The filter is produced by photolithography and etching on a silicon wafer, resulting in... Figure 12 The structure.
[0039] 2. In Figure 12A sacrificial layer 110 is deposited on the structure, and obtained by chemical physical grinding, as shown in the figure. Figure 13 The structure.
[0040] 3. Deposit 102 layers of the lower electrode of the resonator, and pattern the lower electrode of the resonator through photolithography and etching, such as... Figure 14 .
[0041] 4. Deposit a piezoelectric thin film 104, and pattern the piezoelectric layer using photolithography and etching, such as... Figure 15 5. Deposit capacitor sacrificial layer 110, and pattern the capacitor sacrificial layer through photolithography and etching to obtain the following... Figure 16 structure.
[0042] 6. The upper electrode 105 of the resonator and the upper electrode 109 of the capacitor are deposited using a liftoff process to obtain the following: Figure 17 structure.
[0043] 7. Release the sacrificial layer 110 and the capacitor sacrificial layer 110 to obtain the acoustic mirror and the capacitor dielectric cavity, as shown. Figure 18 .
[0044] It should be noted that the selection of materials for each part of the solution provided in this application can be referenced as follows: The substrate 101 can be made of materials such as single-crystal silicon, gallium nitride, gallium arsenide, sapphire, quartz, silicon carbide, diamond, etc.
[0045] The resonator lower electrode (electrode pin) 102 can be made of molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium, or a combination of the above metals or their alloys.
[0046] Acoustic mirror 103 can be a cavity, or it can use a Bragg reflector layer or other equivalent forms. The piezoelectric layer 104 can be a single-crystal piezoelectric material, such as single-crystal aluminum nitride, single-crystal gallium nitride, single-crystal lithium niobate, single-crystal lead zirconate titanate (PZT), single-crystal potassium niobate, single-crystal quartz film, or single-crystal lithium tantalate, etc. It can also be a polycrystalline piezoelectric material (as opposed to single-crystal, a non-single-crystal material), such as polycrystalline aluminum nitride, zinc oxide, PZT, etc. It can also be a rare earth element containing a certain atomic ratio of the above materials. Element-doped materials, for example, can be doped aluminum nitride, which contains at least one rare earth element, such as scandium (Sc), yttrium (Y), magnesium (Mg), titanium (Ti), lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), lutetium (Lu), etc. The upper electrode 105 (electrode pin) of the resonator can be made of the same material as the bottom electrode. Materials can include molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium, or composites or alloys of these metals. The top and bottom electrodes are generally made of the same material, but they can also be different.
[0047] The upper electrode of the capacitor is 109, and the material can be selected from molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium, or a combination of the above metals or their alloys. Based on the same inventive concept, this application also provides a filter, including the resonator filter structure mentioned in the above resonator filter structure embodiment.
[0048] Based on the same inventive concept, this application also provides an electronic device, including the filter mentioned in the above filter embodiments.
[0049] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the present invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.
[0050] Numerous specific details are set forth in the specification provided herein. However, it will be understood that embodiments of this application may be practiced without these specific details. In some instances, well-known structures and techniques have not been shown in detail so as not to obscure the understanding of this specification.
[0051] Furthermore, those skilled in the art will understand that although some embodiments described herein include certain features included in other embodiments but not others, combinations of features from different embodiments are meant to be within the scope of this application and form different embodiments.
[0052] The above description is merely a preferred embodiment of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.
Claims
1. A resonator filter structure, characterized in that, Includes a substrate and a circuit structure integrated on one side of the substrate; The substrate includes a resonator region and a capacitor region; The resonator region is provided with a resonator circuit structure, and the capacitor region is provided with a capacitor structure. The acoustic mirror in the resonator circuit structure and the capacitor dielectric layer of the capacitor structure are made of the same material. One electrode layer of the capacitor structure is interconnected with one electrode layer of the resonator circuit structure, and they are formed by deposition through the same deposition process followed by patterning.
2. The resonator filter structure according to claim 1, characterized in that, The resonator circuit structure includes at least two resonator units; each resonator unit includes an acoustic mirror, a lower resonator electrode layer, a piezoelectric layer and an upper resonator electrode layer distributed sequentially along a first direction, wherein the first direction is perpendicular to the substrate surface and away from the substrate surface; The capacitor structure includes at least one pair of capacitor units, each capacitor unit including a lower capacitor electrode layer, a capacitor dielectric layer and an upper capacitor electrode layer distributed sequentially along the first direction.
3. The resonator filter structure according to claim 2, characterized in that, The lower electrode layer of the capacitor unit and the upper electrode layer of the resonant unit are interconnected and are formed by deposition through the same deposition process followed by patterning.
4. The resonator filter structure according to claim 2, characterized in that, The lower electrode layer of the capacitor unit is connected to the lower electrode layer of the resonant unit, and they are formed by deposition through the same deposition process followed by patterning.
5. The resonator filter structure according to claim 2, characterized in that, If there are two resonant units and a pair of capacitor units; the first resonant unit, the first capacitor unit, the second capacitor unit, and the second resonant unit are arranged sequentially along a second direction, which is parallel to the substrate.
6. The resonator filter structure according to claim 5, characterized in that, The lower electrode layer of the first capacitor unit is connected to the upper electrode layer of the first resonant unit. The lower electrode layer of the second capacitor unit is connected to the upper electrode layer of the second resonant unit.
7. The resonator filter structure according to claim 5, characterized in that, The lower electrode layer of the first capacitor unit is connected to the lower electrode layer of the first resonant unit. The lower electrode layer of the second capacitor unit is connected to the lower electrode layer of the second resonant unit.
8. The resonator filter structure according to claim 5, characterized in that, The upper electrode layer of the first capacitor unit is connected to the upper electrode layer of the second capacitor unit.
9. A filter, characterized in that, Includes the resonator filter structure as described in any one of claims 1-8.
10. An electronic device, characterized in that, Includes the filter as described in claim 9.