A vapor deposition apparatus

Abstract

The application relates to the field of semiconductors and discloses a vapor deposition device, which comprises an epitaxial growth assembly, the epitaxial growth assembly comprising: a conveying device for conveying a substrate to be deposited; at least two reaction components located on the conveying device, each reaction component having a reaction chamber inside, the reaction components being arranged in sequence along the conveying direction of the conveying device, and the side surfaces of adjacent reaction components being in contact, each reaction component being provided with a conveying door on the side surface in contact with the adjacent reaction component, the conveying door being used for conveying the substrate to be deposited into the reaction chamber of the next reaction component by the conveying device; and each reaction component being provided with a gas inlet communicating with the reaction chamber and used for conveying reaction gas to the reaction chamber. Each reaction component has one reaction chamber inside, and the reaction gas enters the reaction chamber from the gas inlet, so that different film layers can be completed in different reaction components, the reaction of gases required for the growth of different film layers is avoided, and the crystal structure between different film layers is improved.

Description

Technical Field

[0001] This application relates to the semiconductor field, and in particular to a vapor deposition apparatus. Background Technology

[0002] In the semiconductor manufacturing field, vapor deposition methods (such as metal-organic chemical vapor deposition (MOCVD) and chemical vapor deposition (CVD)) are used to grow the required film layers on wafers.

[0003] Current vapor deposition equipment has only one reaction chamber. Since different gas sources are used to grow films of different materials, the gas source required for the growth of the previous film layer volatilizes in the reaction chamber and reacts with the gas source required for the growth of the next film layer. This affects the crystal structure and crystal composition of the next film layer, thus affecting the quality of the final semiconductor device.

[0004] Therefore, how to solve the above-mentioned technical problems should be a key focus for those skilled in the art. Utility Model Content

[0005] The purpose of this application is to provide a vapor deposition apparatus to avoid mutual reactions between gases required for the growth of different film layers and to improve the crystal structure between different deposited film layers.

[0006] To address the aforementioned technical problems, this application provides a vapor deposition apparatus, including an epitaxial growth assembly, the epitaxial growth assembly comprising:

[0007] Conveying device, used to convey the substrate to be deposited;

[0008] At least two reaction components are located on the conveying device, each of the reaction components having a reaction chamber inside. The reaction components are arranged sequentially along the conveying direction of the conveying device, and the sides of adjacent reaction components are in contact with each other. Each reaction component has a conveying gate on the side in contact with the adjacent reaction component, which is used by the conveying device to drive the substrate to be deposited into the reaction chamber of the next reaction component.

[0009] Each of the reaction components is provided with an air inlet communicating with the reaction chamber for delivering reaction gas to the reaction chamber.

[0010] As an alternative approach, it also includes:

[0011] A gas transfer component is provided in the reaction chamber and communicates with the air inlet. The gas transfer component has multiple air outlets on the side away from the air inlet.

[0012] Alternatively, the gas transfer component can be a rotatable component, with the rotation center of the gas transfer unit being the center point of the gas transfer component.

[0013] As an alternative, the surface of the conveying device is provided with a fixing part for fixing the chassis that carries the substrate to be deposited.

[0014] Alternatively, the number of fixing parts is at least two, and the distance between two adjacent fixing parts is equal to the distance between the centers of two adjacent reaction chambers.

[0015] As an alternative approach, it also includes:

[0016] A cleaning device located below the conveying device is used to clean the chassis.

[0017] As an alternative, two adjacent reaction components may share a sidewall.

[0018] As an alternative approach, it also includes:

[0019] A gas delivery assembly connected to the air inlet.

[0020] As an alternative approach, it also includes:

[0021] A control unit connected to the gas delivery assembly and the conveying device.

[0022] As an alternative approach, it also includes:

[0023] Heating devices located within each of the aforementioned reaction components.

[0024] This application provides a vapor deposition apparatus, including an epitaxial growth assembly. The epitaxial growth assembly includes: a conveying device for conveying a substrate to be deposited; at least two reaction components located on the conveying device, each reaction component having a reaction chamber inside; the reaction components are arranged sequentially along the conveying direction of the conveying device, and the sides of adjacent reaction components are in contact with each other; each reaction component has a conveying gate on the side in contact with the adjacent reaction component, for the conveying device to drive the substrate to be deposited into the reaction chamber of the next reaction component; each reaction component has an inlet communicating with the reaction chamber for delivering reaction gas to the reaction chamber.

[0025] As can be seen, the vapor deposition apparatus in this application includes a conveying device and at least two reaction units. The reaction units are arranged in close contact, and a conveying gate is provided on the side of each reaction unit that contacts the adjacent reaction unit. The conveying device can carry the substrate to be deposited sequentially through each reaction unit. Each reaction unit has a reaction chamber, and the reaction gas enters the reaction chamber from the gas inlet of each reaction unit. Therefore, different film layers can be deposited in different reaction units, avoiding mutual reactions between the gases required for the growth of different film layers, improving the crystal structure between different film layers, and thus improving the performance of the final semiconductor device. Attached Figure Description

[0026] To more clearly illustrate the technical solutions of the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0027] Figure 1 This is a schematic diagram of the structure of an existing MOCVD device;

[0028] Figure 2 This is a schematic diagram of the structure of a vapor deposition apparatus provided in an embodiment of this application;

[0029] Figure 3 A schematic diagram of the structure of a reaction component provided in an embodiment of this application. Figure 1 ;

[0030] Figure 4 A schematic diagram of the structure of a reaction component provided in an embodiment of this application. Figure 2 ;

[0031] Figure 5 A top view of a conveyor belt provided in an embodiment of this application;

[0032] In the diagram, 1 is the satellite disk, 2 is the top plate, 3 is the gas delivery interface, 4 is the large disk, 10 is the epitaxial growth assembly, 20 is the gas delivery assembly, 30 is the control unit, 101 is the conveying device, 102 is the reaction unit, 103 is the sheet transfer assembly, 104 is the cleaning device, 105 is the chassis, 106 is the fixing unit, 1011 is the conveyor belt, 1021 is the transfer gate, 1022 is the air inlet, and 1023 is the transfer unit. Detailed Implementation

[0033] To enable those skilled in the art to better understand the present application, the present application will be further described in detail below with reference to the accompanying drawings and specific embodiments. Obviously, the described embodiments are merely some embodiments of the present application, and not all embodiments. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0034] Many specific details are set forth in the following description in order to provide a full understanding of the present invention. However, the present invention may also be implemented in other ways different from those described herein. Those skilled in the art can make similar extensions without departing from the spirit of the present invention. Therefore, the present invention is not limited to the specific embodiments disclosed below.

[0035] Taking MOCVD equipment as an example, such as Figure 1 As shown, the MOCVD equipment has only one reaction chamber, which contains five small satellite disks 1 and one large disk 4. A top plate 2 is located on the top, and a gas delivery port 3 is mounted on the top plate 2. During operation, the large disk 4 drives the five satellite disks 1 to rotate counterclockwise, while the satellite disks 1 themselves rotate clockwise under the influence of airflow.

[0036] As described in the background section, current vapor deposition equipment has only one reaction chamber. Since different gas sources are used to grow films of different materials, the gas source required for the growth of the previous film layer volatilizes in the reaction chamber and reacts with the gas source required for the growth of the next film layer. This affects the crystal structure and crystal composition of the next film layer, thereby affecting the quality of the final semiconductor device.

[0037] In view of this, this application provides a vapor deposition apparatus, please refer to... Figures 2 to 3 It may include an epitaxial growth component 10, which may include:

[0038] Conveying device 101 is used to convey the substrate to be deposited;

[0039] At least two reaction components 102 are located on the conveying device 101. Each reaction component 102 has a reaction chamber inside. The reaction components 102 are arranged sequentially along the conveying direction of the conveying device 101, and the sides of adjacent reaction components 102 are in contact with each other. Each reaction component 102 has a conveying gate 1021 on the side in contact with the adjacent reaction component 102, which is used by the conveying device 101 to drive the substrate to be deposited into the reaction chamber of the next reaction component 102.

[0040] Each of the reaction components 102 is provided with an air inlet 1022 communicating with the reaction chamber for delivering reaction gas to the reaction chamber.

[0041] The air inlet 1022 of each reaction component 102 is connected to the gas source bottle required for the film layer to be grown in that reaction component 102. It should be noted that the position of the air inlet 1022 is not limited in this embodiment and can be set by the user.

[0042] As one possible implementation, the air inlet 1022 is located at the top of the reaction component 102 and is positioned opposite to the substrate to be deposited, which enters the reaction component 102 and is located at the bottom of the reaction component 102, so as to facilitate the growth of a film layer with uniform thickness on the surface of the substrate to be deposited.

[0043] The conveying device 101 may include a conveyor belt 1011 and a drive unit, the drive unit being used to drive the conveyor belt 1011 to rotate.

[0044] It should be noted that this application does not impose a specific limit on the number of reaction components 102, which can be set according to the actual situation. Generally, the number of reaction components 102 is between 8 and 13.

[0045] It is understood that the reaction components 102 located at both ends have an inlet on the side of one reaction component 102 so that the substrate to be deposited enters the first reaction component 102 along the conveying direction through the inlet, and an outlet on the side of the other reaction component 102 so that the substrate to be deposited after the film layer has been deposited leaves the last reaction component 102 in the conveying direction through the outlet.

[0046] It should be noted that the vapor deposition apparatus may also include a transfer component 103 located on the conveying device 101 and at both ends of all reaction components 102. One transfer component 103 is located on the side of the first reaction component 102 along the conveying direction away from the other reaction components 102, and is used to place the substrate to be deposited so as to convey the substrate to be deposited into the first reaction component 102. The other transfer component 103 is located on the side of the last reaction component 102 along the conveying direction away from the other reaction components 102, and is used to place the substrate to be deposited after the film layer has been deposited so as to remove the substrate to be deposited after the film layer has been deposited and leave the conveying device 101.

[0047] The shape of the reaction component 102 is not limited in this application and can be configured in various ways. For example, the shape of the reaction component 102 can be a cube or a cuboid, wherein the top and bottom surfaces of the cuboid can be squares or rectangles.

[0048] The shape of the plate transfer component 103 can be the same as the shape of the reaction component 102.

[0049] The vapor deposition apparatus may also include a chassis 105 for supporting the substrate to be deposited. The substrate to be deposited can be placed on the chassis 105, which is placed on the conveyor belt 1011 of the conveying device 101, thereby driving the substrate to be deposited to move. The shape of the chassis 105 may be the same as the shape of the substrate to be deposited. The substrate to be deposited is generally a wafer, so the shape of the chassis 105 may be circular.

[0050] The size of the chassis 105 is not limited in this application, as long as it can fit into each reaction component 102. For example, the diameter of the chassis 105 can range from 6 cm to 40 cm.

[0051] As one possible implementation, the bottom surface of the reaction component 102 is square, and the side length of the bottom surface of the reaction component 102 is 1.1 to 1.3 times the diameter of the chassis 105, so as to save space of the reaction component 102 and reduce the situation where the reaction gas is sprayed into the area outside the substrate to be deposited, thus saving costs.

[0052] It should be noted that the configuration of the reaction component 102 is not limited in this embodiment.

[0053] As one possible implementation, two adjacent reaction components 102 can share a sidewall, on which a transfer gate 1021 can be provided, which can reduce the amount of material used in the reaction components 102 and reduce costs.

[0054] As another possible implementation, two adjacent reaction components 102 may not share sidewalls, that is, each reaction component 102 has its own sidewall. In this case, a transfer gate 1021 is provided on both contacting sidewalls, or a transfer gate 1021 is provided on one sidewall of the two contacting sidewalls and an opening is provided on the other sidewall. This can realize the transfer of the substrate to be deposited between the two adjacent reaction components 102, and also realize the separation of the two adjacent reaction chambers from each other.

[0055] In one embodiment of this application, the vapor deposition apparatus may further include:

[0056] The gas delivery assembly 20 connected to the air inlet 1022 may include a gas source cylinder and a pipeline, with one end of the pipeline connected to the gas source cylinder and the other end connected to the air inlet 1022.

[0057] Furthermore, in one embodiment of this application, the vapor deposition apparatus may further include:

[0058] A control unit 30 connected to the gas delivery assembly and the delivery device 101.

[0059] The control unit 30 can control the gas delivery and the movement of the conveying device 101 (e.g., conveying speed, conveying start and stop, etc.) to achieve automated control of film deposition.

[0060] In this embodiment, the vapor deposition apparatus includes a conveying device 101 and at least two reaction units 102. The reaction units 102 are arranged in close contact, and a conveying gate 1021 is provided on the side of each reaction unit 102 that contacts the adjacent reaction unit 102. The conveying device 101 can carry the substrate to be deposited sequentially through each reaction unit 102. Each reaction unit 102 has a reaction chamber, and the reaction gas enters the reaction chamber from the gas inlet 1022 of each reaction unit 102. Therefore, different film layers can be deposited in different reaction units 102, avoiding mutual reactions between the gases required for the growth of different film layers, improving the crystal structure between different film layers, and thus improving the performance of the final semiconductor device.

[0061] Based on the above embodiments, in one embodiment of this application, such as Figure 4 As shown, the vapor deposition apparatus may also include:

[0062] A gas transfer component 1023 is disposed in the reaction chamber and communicates with the air inlet 1022. The gas transfer component 1023 has multiple air outlets on the side away from the air inlet 1022.

[0063] The gas transfer component 1023 has a hollow structure and can be rectangular in shape.

[0064] In this embodiment, by setting a gas transfer component 1023, the reaction gas enters the gas transfer component 1023 through the gas inlet 1022, and then enters the reaction chamber through the gas outlet. Since there are multiple gas outlets, the uniformity of the distribution of the reaction gas in the reaction chamber can be improved, thereby improving the uniformity of the thickness of the film deposited on the substrate to be deposited.

[0065] To further improve the uniformity of the deposited film thickness, the vent holes are evenly distributed on the side of the gas transfer component 1023 away from the air inlet 1022.

[0066] In one possible implementation, the gas transfer component 1023 can be fixed. However, this application does not specifically limit this. In another embodiment of this application, the gas transfer component 1023 is a rotatable component, and the rotation center of the gas transfer unit is the center point of the gas transfer component 1023. In this embodiment, the gas transfer component 1023 rotates.

[0067] When the gas rotating component rotates, the reactive gas can fall more evenly onto the surface of the substrate to be deposited, thereby making the thickness of the grown film more uniform.

[0068] Based on any of the above embodiments, in one embodiment of this application, such as Figure 5 As shown, the surface of the conveying device 101 is provided with a fixing part 106 for fixing the chassis 105 that carries the substrate to be deposited.

[0069] The fixing part 106 is provided on the surface of the conveyor belt 1011. For example, the fixing part 106 can be a protrusion, and the chassis 105 is provided with a groove that matches the protrusion, thereby fixing the chassis 105 and preventing slippage.

[0070] By setting the fixing part 106, the stability of the substrate to be deposited during transport on the conveyor belt 1011 can be improved.

[0071] It should be noted that the number of fixing parts 106 is not limited in this embodiment and can be set arbitrarily. For example, the number of fixing parts 106 can be one, or the number of fixing parts 106 can be at least two.

[0072] When the number of fixing parts 106 is at least two, film deposition can be performed on at least two substrates to be deposited simultaneously, thereby improving the efficiency of film fabrication.

[0073] As one possible implementation, the number of the fixing parts 106 is at least two, and the distance between two adjacent fixing parts 106 is equal to the distance between the centers of two adjacent reaction chambers, thereby ensuring that when the conveying device 101 conveys the substrate to be deposited, each substrate to be deposited is conveyed to the center of the deposition chamber each time, thereby improving the uniformity of the thickness of the deposited film on the substrate to be deposited.

[0074] When the reaction component 102 is a cuboid with a square base, the distance between two adjacent fixing parts 106 is the side length of the base of the reaction component 102.

[0075] Based on any of the above embodiments, in one embodiment of this application, such as Figure 2 As shown, the vapor deposition apparatus may also include:

[0076] The cleaning device 104 located below the conveying device 101 is used to clean the chassis 105.

[0077] Chlorine gas mixed with water vapor can be used for cleaning.

[0078] Once the film deposition is complete, the substrate to be deposited is removed from the chassis 105. The chassis 105 continues to move along the conveyor belt 1011 in the conveyor device 101. The cleaning device 104 located below the conveyor device 101 can then clean the substrate. The cleaning of the chassis 105 is completed simultaneously during the epitaxial growth film operation, saving time and increasing production capacity.

[0079] Based on any of the above embodiments, in one embodiment of this application, the vapor deposition apparatus may further include:

[0080] A heating device located within each of the reaction components 102.

[0081] Heating devices include, but are not limited to, heating wires, heating plates, and heating lamps.

[0082] This application does not limit the position of the heating device in the reaction component 102, and it can be set as desired. For example, the heating device can be set inside the top surface of the reaction component 102, or inside the side wall, etc.

[0083] The heating device is used to heat the reaction chamber of the reaction component 102 to the temperature required for growing a film layer in the reaction chamber.

[0084] Once the film growth is complete in the previous reaction unit 102, the heating device in the next reaction unit 102 raises the temperature of the next reaction unit 102 to the required temperature so that when the substrate to be deposited is transferred into the next reaction unit 102, film deposition can be performed directly, saving time and increasing production capacity.

[0085] The various embodiments in this specification are described in a progressive manner. Each embodiment focuses on the differences from other embodiments. The same or similar parts between the various embodiments can be referred to each other.

[0086] The vapor deposition apparatus provided in this application has been described in detail above. Specific examples have been used to illustrate the principles and implementation methods of this application. The descriptions of the embodiments above are only for the purpose of helping to understand the solution and core ideas of this application. It should be noted that those skilled in the art can make several improvements and modifications to this application without departing from the principles of this application, and these improvements and modifications also fall within the protection scope of this application.

Claims

1. A vapor deposition apparatus characterized by comprising: Includes an epitaxial growth assembly, the epitaxial growth assembly comprising: Conveying device, used to convey the substrate to be deposited; At least two reaction components are located on the conveying device, each of the reaction components having a reaction chamber inside. The reaction components are arranged sequentially along the conveying direction of the conveying device, and the sides of adjacent reaction components are in contact with each other. Each reaction component has a conveying gate on the side in contact with the adjacent reaction component, which is used by the conveying device to drive the substrate to be deposited into the reaction chamber of the next reaction component. Each of the reaction components is provided with an air inlet communicating with the reaction chamber for delivering reaction gas to the reaction chamber.

2. A vapour deposition apparatus as claimed in claim 1, wherein, Also includes: A gas transfer component is provided in the reaction chamber and communicates with the air inlet. The gas transfer component has multiple air outlets on the side away from the air inlet.

3. A vapour deposition apparatus as claimed in claim 2, wherein, The gas transfer component is a rotatable component, and the rotation center of the gas transfer unit is the center point of the gas transfer component.

4. The vapor deposition apparatus of claim 1, wherein The surface of the conveying device is provided with a fixing part for fixing the chassis that carries the substrate to be deposited.

5. A vapour deposition apparatus as claimed in claim 4, wherein The number of the fixing parts is at least two, and the distance between two adjacent fixing parts is equal to the distance between the centers of two adjacent reaction chambers.

6. A vapour deposition apparatus as claimed in claim 4, wherein Also includes: A cleaning device located below the conveying device is used to clean the chassis.

7. The vapor deposition apparatus of claim 1, wherein The two adjacent reaction components share a sidewall.

8. The vapor deposition apparatus as described in claim 1, characterized in that, Also includes: A gas delivery assembly connected to the air inlet.

9. A vapour deposition apparatus as claimed in claim 8, wherein Also includes: A control unit connected to the gas delivery assembly and the conveying device.

10. A vapour deposition apparatus as claimed in any of claims 1 to 9, wherein Also includes: Heating devices located within each of the aforementioned reaction components.

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