Optoelectronic component and backlight for a display

Abstract

comprising an optoelectronic component (100) - a semiconductor chip (2) for generating primary radiation in the blue spectral range, - a conversion element (4) which is arranged in the beam path of the semiconductor chip (2) and is configured to generate a secondary radiation from the primary radiation, and - a reflective element (5), wherein the conversion element (4) comprises at least a first phosphor (9) and a second phosphor (10), where the first phosphor (9) Sr(Sr 1-x Approx x )Si2Al2N6:Eu 2+ and (Sr 1-y Approx y ) [LiAl3N4]:Eu 2+ where 0 ≤ x ≤ 1 and 0 ≤ y ≤ 1, wherein the total radiation (G) emanating from the component (100) is white mixed light, wherein the reflection element (5) directly surrounds both the side surfaces of the semiconductor chip (2) and the side surfaces of the conversion element (4).

Description

[0001] The invention relates to an optoelectronic component. Furthermore, the invention relates to a backlight for a display.

[0002] Optoelectronic components, particularly light-emitting diodes (LEDs), are used for the backlighting of LCD filters in modern televisions, computer monitors, and many other displays. This can be achieved either directly or through indirect illumination via a light guide. Two key requirements for these optoelectronic components are, on the one hand, maximum brightness and, on the other hand, coverage of the largest possible color space in the CIE color diagram. Conventional LCD filter systems consist of three or four color filters (blue, green, and red, or blue, green, yellow, and red). However, these LCD filters have a wide full-width half maximum (FWHM) in the range of typically 70 nm to 120 nm.

[0003] The publication US 2009 / 0294731 A1 discloses silicate-based green phosphors for white LEDs.

[0004] The document DE 10 2014 107 972 A1 discloses a lighting device with a first phosphor and filter particles.

[0005] The publication WO 2013 / 175336 A1 discloses narrowband red-emitting phosphors for solid-state lighting.

[0006] The document DE 20 2008 018 060 U1 discloses a white light emitting device.

[0007] The document DE 10 2013 214 235 A1 discloses a lighting device with semiconductor light sources and a circumferential dam.

[0008] The document US 2015 / 0263253 A1 discloses an LED package.

[0009] One object of the invention is to provide an optoelectronic component that efficiently emits radiation during operation of the component. Furthermore, one object of the invention is to provide a backlight for a display that efficiently emits radiation during operation of the backlight.

[0010] These objects are achieved by an optoelectronic component according to independent claim 1. Advantageous embodiments and refinements of the invention are the subject of the dependent claims. Furthermore, these objects are achieved by a backlight for a display according to independent claim 11.

[0011] The optoelectronic component has a semiconductor chip. The semiconductor chip is configured to generate primary radiation in the blue spectral range. The optoelectronic component has a conversion element. The conversion element is arranged in the beam path of the semiconductor chip. The conversion element is configured to generate secondary radiation from the primary radiation of the semiconductor chip. The conversion element has or consists of at least a first phosphor and a second phosphor. The first phosphor is a combination of Sr(Sr 1-x Ca x )Si2Al2N6:Eu 2+ and (Sr 1-y Ca y ) [LiAl3N4]:Eu 2+ with 0 ≤ x ≤ 1 and 0 ≤ y ≤ 1. The total radiation emerging from the optoelectronic component is white mixed light.

[0012] According to at least one embodiment, the optoelectronic component is a light-emitting diode, or LED for short. The optoelectronic component is then preferably configured to emit white light.

[0013] "Total radiation" is understood here and below to mean a mixed radiation consisting of primary radiation emitted by the at least one semiconductor chip and secondary radiation emitted by the conversion element, which ultimately leaves the component. The mixing ratio of primary radiation to secondary radiation can be regulated and controlled by the composition and concentration of the corresponding phosphors in the conversion element. In the case of full conversion, the total radiation can also be merely the secondary radiation. In the case of partial conversion, the total radiation can be the sum of primary radiation from the semiconductor chip and secondary radiation from the conversion element. The secondary radiation can be composed of radiation emitted by the first phosphor and radiation emitted by the second phosphor.

[0014] White mixed light from the component is generated primarily through partial conversion. Here and in the following, “white” refers to the total radiation having a color coordinate of the CIE chromaticity diagram with Cx and Cy values ​​along the Planck locus or at its isotherms. For background lighting, the color coordinates are preferably at color temperatures between 7000 K and 25000 K. For example, the color coordinate can be in the range of Cx 0.25-0.33 and Cy 0.22-0.33. The color coordinate here refers to points in or on a color solid, the position of which is described in color space using suitable coordinates. The color coordinate represents the color perceived by an observer. The color coordinate is a coordinate or coordinates in the color standard system adopted by the CIE (the International Commission on Illumination). Here and in the following, the CIE color standard system refers to the 1931 standard.The CIE chromaticity diagram depicts the totality of all perceivable colors, i.e., the visible part of electromagnetic radiation. Within this diagram, any color is defined by three coordinates: Cx, Cy, and Cz. Two coordinates are sufficient to determine the color. Since the sum of all three coordinates must always equal 1, Cz can easily be calculated from Cx and Cy. Such a color coordinate is referred to here as the chromaticity locus of the total radiation.

[0015] According to at least one embodiment, the optoelectronic component comprises at least one semiconductor chip. Alternatively, the optoelectronic component may also comprise more than one semiconductor chip, for example, another semiconductor chip, i.e., two semiconductor chips. The semiconductor chips may have an identical structure. The at least one optoelectronic semiconductor chip comprises a semiconductor layer sequence. The semiconductor layer sequence includes an active layer with at least one pn junction and / or with one or more quantum well structures. The semiconductor layer sequence of the semiconductor chip is preferably based on a III-V compound semiconductor material. The semiconductor material is preferably a nitride compound semiconductor material, such as Al n In 1-n-m Ga m N, or a phosphide compound semiconductor material, such as Al n In 1-n-m Ga mP, where 0 ≤ n ≤ 1, 0 ≤ m ≤ 1 and n + m ≤ 1. Likewise, the semiconductor material can be Al x Ga 1-x As with 0 ≤ x ≤ 1. The semiconductor layer sequence can contain dopants as well as additional components. For the sake of simplicity, however, only the essential components of the crystal lattice of the semiconductor layer sequence, i.e., Al, As, Ga, In, N, or P, are listed, even though these may be partially replaced and / or supplemented by small amounts of other substances.

[0016] During operation of the at least one semiconductor chip or of two semiconductor chips, primary radiation is generated in the active layer. A wavelength or the wavelength maximum of the primary radiation is preferably in the ultraviolet and / or visible and / or IR spectral range, in particular at wavelengths between 420 nm and 800 nm, for example, between 440 nm and 480 nm. Preferably, the semiconductor chip is configured during operation to generate primary radiation from the blue spectral range.

[0017] According to at least one embodiment, the blue spectral range of the semiconductor chip has at least one or exactly one peak wave maximum between 380 nm and 480 nm inclusive.

[0018] Here and in the following, color specifications relating to emitting conversion elements and / or total radiation and / or emitting semiconductor chips indicate the respective spectral range of the electromagnetic radiation.

[0019] According to at least one embodiment, the optoelectronic component comprises a further semiconductor chip. The further semiconductor chip is configured, in particular, to emit further primary radiation from the blue spectral range during operation. The total primary radiation results from the primary radiation of the first semiconductor chip and the further semiconductor chip. The semiconductor chip and the further semiconductor chip are arranged, in particular, in a common recess in a housing of an optoelectronic component. In particular, the conversion element is then formed as a pot and surrounds both semiconductor chips in a form-fitting manner. "Form-fitting" here and below refers to the fact that the conversion element directly mechanically and / or electrically surrounds both the radiation exit surfaces and the side surfaces of the respective semiconductor chips.

[0020] According to at least one embodiment of the component, it comprises a conversion element. The conversion element is arranged in the beam path of the semiconductor chip. In particular, the conversion element is arranged directly on the semiconductor chip, i.e., on the radiation exit surface of the semiconductor chip. "Directly" here and below means that the conversion element is arranged directly on the radiation exit surface of the semiconductor chip. Therefore, no further layers or elements, such as adhesive layers, are present between the semiconductor chip and the conversion element. Alternatively, the conversion element and the semiconductor chip can also be spatially spaced from one another. For example, an adhesive layer can be arranged between the semiconductor chip and the conversion element.

[0021] The conversion element is configured to at least partially absorb the primary radiation emitted by the at least one semiconductor chip or the total primary radiation and to convert it into secondary radiation, preferably with a wavelength different from the wavelength of the primary radiation, in particular a longer wavelength. The conversion element comprises or consists of at least one first phosphor and / or a second phosphor.

[0022] According to at least one embodiment, the first phosphor is a Sr(Sr 1-x Ca x )Si2Al2N6:Eu 2+ with 0 ≤ x ≤ 1, preferably with 0.5 ≤ x ≤ 1, for example x = 0.6. The first phosphor can be a Sr2Si2Al2N6:Eu 2+ when x = 0. The first phosphor is europium, in particular Eu 2+Alternatively or additionally, the first phosphor can contain additional dopants, for example from the rare earth group, such as cerium, yttrium, terbium, scandium, ytterbium, and / or samarium. Europium or other dopants can partially replace the lattice sites of the Sr and / or Ca.

[0023] The proportion of dopants, in particular europium, can be between 0.1 wt% and 12 wt%, for example 6 wt% to 9 wt%.

[0024] The first phosphor Sr(Sr 1-x Ca x )Si2Al2N6:Eu 2+ can in particular have a color coordinate Cx between 0.655 and 0.685 and Cy between 0.300 and 0.350. The emission spectrum of the first phosphor Sr(Sr 1-x Ca x )Si2Al2N6:Eu 2+ In particular, it has a maximum half-width of 82 nm. This allows the provision of a narrow-band emitting first phosphor that emits radiation in particular from the red spectral range.

[0025] According to at least one embodiment, the first phosphor is a (Sr 1-y Ca y ) [LiAl3N4]:Eu 2+ with 0 ≤ y ≤ 1, preferably with 0.5 ≤ y ≤ 1, for example y = 0.6. The first phosphor can be a Sr[LiAl3N4]:Eu 2+ when y = 0. The first phosphor has a europium doping, in particular a Eu 2+ -doping. Alternatively or additionally, the first phosphor (Sr 1-y Ca y ) [LiAl3N4]:Eu 2+ other dopants, for example from the group of rare earths or lanthanides. Europium or other dopants can partially replace the lattice sites of Sr and / or Ca. The color coordinate of the first phosphor Cx is in particular between 0.680 and 0.715 and Cy between 0.280 and 0.320. The emission spectrum of the first phosphor (Sr 1-y Ca y ) [LiAl3N4]:Eu 2+ preferably has a peak half-width of maximum 55 nm.

[0026] The color locations described here are, in particular, color locations that occur at an excitation wavelength of the first phosphor from the blue spectral range, for example at 460 nm.

[0027] According to at least one embodiment, the first phosphor emits a dominant wavelength between 590 nm and 640 nm inclusive. In particular, the excitation of the first phosphor then takes place at a wavelength between 440 nm and 470 nm, for example 460 nm. Preferably, the first phosphor comprises Sr(Sr 1-x Ca x )Si2Al2N6:Eu 2+ a dominant wavelength between 595 nm and 625 nm inclusive. Preferably, the first phosphor (Sr 1-y Ca y ) [LiA13N4]:Eu 2+a dominant wavelength between 623 nm and 633 nm. The dominant wavelength is the wavelength that describes the hue as perceived by the human eye. The peak wavelength, on the other hand, represents the wavelength of the maximum of the spectral distribution.

[0028] According to at least one embodiment, the conversion element comprises a second phosphor. The second phosphor is particularly configured to emit radiation from the green and / or yellow spectral range. In particular, the second phosphor is selected from a group comprising alkaline earth orthosilicates, SiAlONs, aluminates, and SiONs. Preferably, the second phosphor is selected from a group comprising (Ba,Sr)2SiO4, beta-SiAlON, (Y,Lu)3(Al,Ga)5O 12 and Ba-SiON. The second phosphor is particularly enriched with rare earths and / or lanthanides, for example europium (Eu 2+ ), cerium (Ce 3+) or combinations thereof, doped, such as (Ba,Sr)2SiO4:Eu 2+ , beta-SiAlON:Eu 2+ , (Y,Lu)3(Al,Ga)5O 12 :Ce 3+ and Ba-SiON:Eu 2+ .

[0029] In particular, the second phosphor emits radiation having a peak wavelength from the spectral range between 510 nm and 590 nm inclusive.

[0030] According to at least one embodiment, the second phosphor is an orthosilicate. Preferably, the second phosphor is an alkaline earth orthosilicate that is combined with rare earths, for example Eu 2+ , is doped. In particular, the orthosilicate is a (Ba,Sr)2SiO4:Eu 2+ . In particular, the second phosphor emits radiation having a peak wavelength in the spectral range between 520 nm and 550 nm.

[0031] According to at least one embodiment, the second phosphor is a beta-SiAlON. A beta-SiAlON is a ceramic phosphor comprising elements of silicon, aluminum, oxygen, and nitrogen in any ratio and composition. Beta-SiAlONs are well known to those skilled in the art and will therefore not be explained in more detail here. The second phosphor emits, in particular, radiation with a peak wavelength in the spectral range between 520 nm and 550 nm.

[0032] According to at least one embodiment, the second phosphor is an yttrium aluminum garnet. Preferably, the second phosphor is a (Y,Lu)3(Al,Ga)5O 12 :Ce 3+The phosphor can therefore comprise aluminum and / or gallium and yttrium and / or lutetium. Furthermore, the second phosphor can also contain small amounts of gadolinium and / or dysprosium. The second phosphor emits, in particular, radiation with a peak wavelength in the spectral range between 530 nm and 550 nm.

[0033] According to at least one embodiment, the second phosphor is a Ba-SiON:Eu 2+ In other words, the second phosphor comprises, in addition to barium as the alkaline earth metal, silicon, oxygen, and nitrogen in any desired ratio and composition. BaSiONs are well known to those skilled in the art and will therefore not be further explained here. The second phosphor emits, in particular, radiation with a peak wavelength in the spectral range between 480 nm and 530 nm.

[0034] According to at least one embodiment, the second phosphor is configured to emit radiation from the green and / or yellow spectral range. The excitation wavelength of the second phosphor is preferably in the blue spectral range, for example, at 460 nm. In particular, the second phosphors, preferably beta-SiAlON, have a color coordinate Cx = 0.280 to 0.330 and Cy = 0.630 to 0.680.

[0035] Alternatively, the color location of the second phosphor, in particular for (Ba,Sr)2SiO4:Eu 2+ , Cx = 0.33 to 0.380 and Cy = 0.590 and 0.650.

[0036] Alternatively, the color location, especially for (Y,Lu)3(Al,Ga)5O 12 :Ce 3+ , Cx = 0.340 to 0.380 and Cy = 0.550 to 0.580.

[0037] According to at least one embodiment, the optoelectronic component comprises at least one semiconductor chip for generating primary radiation from the blue wavelength range and a conversion element comprising precisely two phosphors. The blue-emitting semiconductor chip has, for example, a peak wavelength of 380 nm to 480 nm inclusive. The radiation emitted by the semiconductor chip is absorbed and converted by the two phosphors, the first phosphor and the second phosphor. The first phosphor at least partially converts the radiation into secondary radiation from the red spectral range. The second phosphor at least partially converts the primary radiation into secondary radiation from the green or yellow-green spectral range, such that the combination of primary radiation and secondary radiation results in white mixed light.

[0038] According to at least one embodiment, the primary radiation, secondary radiation of the first phosphor, and / or secondary radiation of the second phosphor are narrow-band. In other words, the peaks of the corresponding emission spectra have a full width at half maximum (FWHM) of 82 nm at most, preferably 55 nm at most. This makes it possible to provide an optoelectronic component with a large color space that efficiently emits total radiation. Furthermore, less phosphor needs to be used. This allows for material and cost savings. Furthermore, production is simpler and more cost-effective compared to an LED, which is composed of three semiconductor components: a blue-emitting, a green-emitting, and a red-emitting.

[0039] Preferably, a white-emitting optoelectronic component can be provided which is inexpensive and easy to produce.

[0040] According to at least one embodiment, the first phosphor and the second phosphor are dispersed in a matrix material. Silicones, such as dimethylvinylsiloxanes and / or vinylalkylpolysiloxanes, can be used as the matrix material, for example. Alternatively, epoxy resin or hybrid materials, such as Ormocers, can also be used as the matrix material.

[0041] The conversion element is preferably arranged directly on the radiation exit surface of the semiconductor chip. The conversion element, which comprises the first phosphor and the second phosphor dispersed in a matrix material, can be formed as an encapsulated material. The conversion element can surround both the radiation exit surface and the side surfaces of the at least one semiconductor chip in a material-fitting and / or form-fitting manner.

[0042] According to at least one embodiment, the conversion element is formed as a layer system. The layer system has at least two layers, a first layer and a second layer. The first layer can comprise or consist of the first phosphor. The first layer can additionally comprise a matrix material. The second layer can comprise or consist of the second phosphor. The second layer can additionally comprise a matrix material. The first layer can be arranged between the semiconductor chip and the second layer. Alternatively, the second layer can be arranged between the semiconductor chip and the first layer in the beam path of the primary radiation.

[0043] If the first layer is arranged between the semiconductor chip and the second layer, this means that the first layer is directly downstream of the semiconductor chip. If the second layer is arranged between the semiconductor chip and the first layer, this means that the second layer is directly downstream of the semiconductor chip in the radiation direction.

[0044] The individual layers of the layer system of the conversion element can have a layer thickness of 20 µm to 200 µm.

[0045] According to at least one embodiment, the layers of the layer system are formed as ceramic. Alternatively, the phosphors of the corresponding layers can be formed as particles and dispersed in the matrix material. The proportion of the dispersed phosphor in the matrix material can be between 1 wt% and 50 wt%.

[0046] Furthermore, a method for producing an optoelectronic component is specified. Preferably, the optoelectronic component described above is produced using this method. All definitions and explanations apply to the method as specified above for the optoelectronic component, and vice versa.

[0047] According to at least one embodiment, the method for producing an optoelectronic component comprises the steps: A) Providing a semiconductor chip for generating primary radiation in the blue spectral range, B) Providing a conversion element which is arranged in the beam path of the semiconductor chip and is configured to generate secondary radiation from the primary radiation. The conversion element has at least a first and a second phosphor, wherein the first phosphor is Sr(Sr 1-x Ca x )Si2Al2N6:Eu 2+ and (Sr 1-y Cay ) [LiAl3N4]:Eu 2+ with 0 ≤ x ≤ 1 and 0 ≤ y ≤ 1. In particular, the component emits white mixed light.

[0048] The invention further relates to a backlight for a display. The backlight preferably comprises the optoelectronic component described above. All definitions and explanations given for the optoelectronic component also apply to the backlight for a display, and vice versa.

[0049] In particular, the optoelectronic component described here is used as a backlight for televisions, computer monitors, and other possible displays. Alternatively, the optoelectronic component can also be used as room lighting.

[0050] Further advantages, advantageous embodiments and further developments emerge from the exemplary embodiments described below in conjunction with the figures.

[0051] They show: The Fig. 1 to 7A each show a sectional view of an optoelectronic component according to an embodiment, the Fig. 7B is a plan view of an optoelectronic component of the Fig. 7A according to one embodiment, the Fig. 8A and Fig. 8B emission spectra according to an embodiment, the Fig. 9A to 10B CIE color diagrams and the corresponding data according to a comparative example.

[0052] In the exemplary embodiments and figures, identical, similar, or similarly functioning elements may be provided with the same reference numerals. The illustrated elements and their relative sizes are not to be considered to scale. Rather, individual elements such as layers, components, structural elements, and regions may be exaggerated for clarity and / or clarity.

[0053] The Fig. 1 shows a schematic side view of an optoelectronic component according to one embodiment. The optoelectronic component 100 comprises a substrate 1. The substrate 1 can be, for example, a semiconductor or ceramic wafer, for example, a molded material made of sapphire, silicon, germanium, silicon nitride, aluminum oxide, titanium dioxide, or a luminescent ceramic, such as YAG. Furthermore, it is possible for the substrate to be a printed circuit board (PCB), a metallic lead frame, or another type of connection carrier. At least one semiconductor chip 2 can be arranged on the substrate 1. The semiconductor chip comprises, in particular, a III-V compound semiconductor material, for example, gallium nitride. The semiconductor chip 2 is preferably configured to emit radiation from the blue spectral range, for example, between 440 nm and 480 nm, during operation of the optoelectronic component.A conversion element 4 is arranged downstream of the semiconductor chip 2. The conversion element 4 is arranged in the beam path of the semiconductor chip 2 and is designed to convert the primary radiation emitted by the semiconductor chip into secondary radiation with a modified, usually longer, wavelength. An adhesive layer 3 can optionally be present between the conversion element 4 and the semiconductor chip 2. The adhesive layer 3 can be a high-refractive index or a low-refractive index material. The conversion element 4 can have a first phosphor 9 and a second phosphor 10. The first phosphor 9, such as Sr(Sr. 1-x Ca x )Si2Al2N6:Eu 2+ and (Sr 1-y Ca y ) [LiAl3N4]:Eu 2+with 0 ≤ x ≤ 1 and 0 ≤ y ≤ 1, and the second phosphor 10, such as beta-SiAlON, can be embedded in a matrix material, for example, silicone or epoxy. The adhesive layer 3 can be selected depending on the choice of matrix material and its refractive index. The optoelectronic component 100 further comprises a reflection element 5, for example made of titanium dioxide. The reflection element 5 surrounds both the side surfaces of the semiconductor chip 2 and the side surfaces of the conversion element 4. The optoelectronic component 100 is configured to emit white mixed light as total radiation G.

[0054] The Fig. 2 shows a schematic side view of an optoelectronic component according to an embodiment. The optoelectronic component 100 of Fig. 2 differs from that of the Fig. 1 in that the component has no substrate 1. The component 100 of the Fig. 2 is thus substrateless and has contact bridges 6. The semiconductor chip 2 is formed here in particular as a top emitter or as a sapphire flip chip, thus having the contact bridges 6 required for contacting on one side surface.

[0055] The Fig. 3 shows a schematic side view of an optoelectronic component according to an embodiment. Fig. 3 differs from the component 100 of the Fig. 1 in that it additionally has a lens 7. The lens can be formed from silicone, for example, and can be arranged directly downstream of the conversion element 4, i.e., in direct mechanical and electrical contact.

[0056] The Fig. 4 shows a schematic side view of an optoelectronic component according to an embodiment. The component 100 of Fig. 4 differs, for example, from the component 100 of Fig. 1 in that the conversion element 4 is formed as a layer system 41, 42. The conversion element 4 has a first layer 41, which comprises at least the first phosphor, and a second layer 42, which comprises at least the second phosphor. The two layers 41, 42 are spatially separated from one another by a further adhesive layer, which may optionally be present. In the case of the component 100 of Fig. 4, the second layer 42 is arranged between the first layer 41 and the semiconductor chip 2. The second layer 42 is configured, in particular, to emit radiation from the green spectral range. The first layer 41 is configured, in particular, to emit radiation from the red spectral range. The semiconductor chip 2 is configured, in particular, to emit primary radiation from the blue spectral range, so that the total radiation G is a combination of the primary radiation from the semiconductor chip 2 and the two secondary radiations from the layers 41, 42 of the conversion element 4. The total radiation G is then, in particular, white mixed light.

[0057] The Fig. 5 shows a side view of an optoelectronic component according to an embodiment. The optoelectronic component 100 of Fig. 5 differs from the optoelectronic component 100 of Fig. 4 in that the layers 41, 42 of the conversion element 4 are interchanged. In other words, the first layer 41 in the component 100 of the Fig. 5 is now arranged between the semiconductor chip 2 and the second layer 42. In other words, the red-emitting first layer 41 of the conversion element 4 is arranged downstream of the semiconductor chip 2, and the green, yellow, or green-yellow-emitting second layer 42 of the conversion element 4 is arranged downstream of the red-emitting first layer 41.

[0058] The Fig. 6 shows a schematic side view of an optoelectronic component 100 according to an embodiment. The optoelectronic component 100 of Fig. 6 is almost identical to the optoelectronic component 100 of Fig. 1 except that the component of the Fig. 6 additionally comprises a protective diode (ESD) 8. This protective diode 8 can optionally be present in the component and be laterally spaced from the semiconductor chip 2. The protective diode 8 can be arranged on the substrate 1 within the recess 4 of a component. The reflection element 5 can be part of a housing.

[0059] The Fig. 7A shows a schematic side view of an optoelectronic component 100 according to an embodiment. The component of Fig. 7A differs from the component 100 of Fig. 6 in that the component 100 has a further semiconductor chip 21. In other words, the component 100 now has two semiconductor chips 2, 21. The two semiconductor chips 2, 21 are laterally spaced from one another and arranged on the substrate 1. Furthermore, a protective diode (ESD) 8 can optionally be present. The two semiconductor chips 2, 21 can be arranged in a common recess 12. In this case, the conversion element 4 is designed as a potting and preferably has the first phosphor and second phosphor dispersed in a matrix material (not shown here).

[0060] The Fig. Figure 7B shows a top view of an optoelectronic component. In particular, the Fig. 7B shows a top view of a protective diode 8, of the radiation exit surface of the semiconductor chip 2 and of the radiation exit surface of the semiconductor chip 21.

[0061] The Fig. 8A and Fig. 8B show emission spectra according to one embodiment and an example of the transmission profile of a blue 8-1, green 8-2, and red 8-3 color filter. In both figures, the relative intensity I rel as a function of the wavelength λ in nm. The Fig. 8A and Fig. 8B each show the total emission, i.e. the emission from primary radiation and secondary radiation, the emission of a semiconductor chip in conjunction with a first and a second phosphor 8-4. In the case of Fig. 8A and Fig. 8B, the second phosphor, which emits green, is a beta-SiAlON. In the case of Fig. 8A the first phosphor is a Sr(Ca,Sr)Si2Al2N6:Eu 2+ In the case of Fig. 8B the first phosphor is a (Sr,Ca) [LiAl3Ni4]:Eu 2+Conventional LCD filter systems consist of three (blue, green, and red) or four (blue, green, yellow, and red) color filters. The LCD filters generally have a half-width (FWHM) of typically 70 nm to 120 nm, within which the transmission can be electrically controlled. The transmitted light results from the superposition of the transmission of the individual color filters. Certain gaps thus arise at the transition points between the filters in the visible spectral range. Consequently, with a broadband, almost continuous spectrum, a certain portion of the emitted LED light is absorbed in the filters. In order to obtain the maximum amount of emitted light from the component with the filters fully open on the screen surface, it is advantageous to use narrow-band phosphors that emit in the range of the individual filter curves ( Fig. 8A and Fig. 8B). It is particularly important that the phosphors used, i.e., the first and second phosphors, each emit only within a filter range to ensure the widest possible color space. The properties of an optoelectronic component can be adapted accordingly using different phosphors. The trend is increasingly toward larger color spaces, for example, DCI-P3 or Rec2020. Therefore, spectrally well-adapted phosphors are required to enable this.

[0062] The Fig. 9A and Fig. 10A each show a CIE color standard diagram. It plots CIEy as a function of CIEx. 9-1 or 10-1 corresponds to the SRGB color space, 9-2 or 10-2 to the DCI-P3 color space, 9-3 or 10-3 to the Adobe color space, and 9-4 or 10-4 to the Rec2020 color space. The figures also show the color space covered by the LED and after filter evaluation. This color space achievable by the component coincides almost perfectly with the DCI-P3 color space (9-2 or 10-2). These color spaces are known to those skilled in the art and are therefore not explained in detail here. Fig. Figure 9B shows the corresponding coverage of the described color spaces in CxCy and u'v' coordinates by an optoelectronic component in which the primary radiation is generated by a blue-emitting semiconductor chip and the secondary radiation by a first phosphor, which here is Sr(Sr 1-x Ca x )Si2Al2N6:Eu 2+and by a second phosphor, which here is a beta-SiAlON. Fig. 10B shows the corresponding coverage of the described color spaces in CxCy or u'v' coordinates by an optoelectronic component in which the primary radiation is generated by a blue-emitting semiconductor chip and the secondary radiation by a first phosphor, which here (Sr 1-y Ca y ) [LiAl3Ni4]:Eu 2+ and by a second phosphor, which here is a beta-SiAlON.

[0063] The Fig. 9A and Fig. 9B show the data of a system consisting of a semiconductor chip emitting primary radiation from the blue spectral range, a second phosphor beta-SiAlON and a first phosphor Sr(Sr 1-x Ca x )Si2Al2N6:Eu 2+ . The Fig. 10A and Fig.10B show the data of a system comprising a blue-emitting semiconductor chip 2, a beta-SiAlON as a second phosphor and a first phosphor of the type (Sr 1-y Ca y ) [LiAl3N4]Eu 2+ The reference numerals 9-5 and 10-5 respectively denote the white point of the CIE color standard diagram.

[0064] The exemplary embodiments described in conjunction with the figures and their features can also be combined with one another according to further exemplary embodiments, even if such combinations are not explicitly shown in the figures. Furthermore, the exemplary embodiments described in conjunction with the figures can have additional or alternative features according to the description in the general part. List of reference symbols 100 optoelectronic components 1 substrate 2 semiconductor chips 3 adhesive layer 4 Conversion element 5 Reflection element or housing 6 contact bridges 7 lens 8 Protective electrode 9 first phosphor 10 second fluorescent 11 Matrix material G Total emissions 12 Recess 21 additional semiconductor chips 31 additional adhesive layer 41 first layer 42 second layer

Claims

[1] Optoelectronic component (100) comprising - a semiconductor chip (2) for generating primary radiation in the blue spectral range, - a conversion element (4) arranged in the beam path of the semiconductor chip (2) and configured to generate secondary radiation from the primary radiation, and - a reflection element (5), wherein the conversion element (4) comprises at least a first phosphor (9) and a second phosphor (10), where the first phosphor (9) is Sr(Sr 1-x Ca x )Si2Al2N6:Eu 2+ and (Sr 1-y Ca y ) [LiAl3N4]:Eu 2+ with 0 ≤ x ≤ 1 and 0 ≤ y ≤ 1, wherein a total radiation (G) emerging from the component (100) is white mixed light, wherein the reflection element (5) directly surrounds both the side surfaces of the semiconductor chip (2) and the side surfaces of the conversion element (4). [2] Optoelectronic component (100) according to claim 1, wherein the first phosphor (9) is Sr(Sr 1-x Ca x )Si2Al2N6:Eu 2+ has a color location Cx between 0.655 and 0.685 and Cy between 0.300 and 0.350 and / or wherein the emission spectrum of the first phosphor (9) is Sr(Sr 1-x Ca x )Si2Al2N6:Eu 2+ has a maximum half-width of 82 nm. [3] Optoelectronic component according to one of the preceding claims, wherein the first phosphor (9) (Sr 1-y Ca y ) [LiAl3N4]:Eu 2+ has a color location Cx between 0.680 and 0.715 and Cy between 0.280 and 0.320 and / or wherein the emission spectrum of the first phosphor (9) (Sr 1-y Ca y ) [LiAl3N4]:Eu 2+ has a maximum half-width of 55 nm. [4] Optoelectronic component (100) according to one of the preceding claims, wherein an emitted radiation of the first phosphor has a dominant wavelength in the range from 590 nm to 640 nm. [5] Optoelectronic component (100) according to one of the preceding claims, wherein the conversion element (4) comprises a second phosphor (10) selected from the group comprising (Ba,Sr)2SiO4, beta-SiAlON, (Y,Lu)3(Al,Ga)5O12 and Ba-SiON, wherein the second phosphor (10) is doped with rare earths and is configured to emit radiation with a peak wavelength from the spectral range between 510 nm and 590 nm. [6] Optoelectronic component (100) according to the preceding claim, wherein the second phosphor (10) is a beta-SiAlON. [7] Optoelectronic component (100) according to one of the preceding claims, wherein the first phosphor (9) and the second phosphor (10) are dispersed in a matrix material (11) and are arranged directly downstream of a radiation exit surface of the semiconductor chip (2). [8] Optoelectronic component (100) according to one of claims 1 to 6, wherein the conversion element (4) is formed as a layer system of at least two layers (41, 42), wherein the first layer (41) comprises the first phosphor (9) and the second layer (42) comprises the second phosphor (10), wherein the first layer (41) is arranged between the semiconductor chip (2) and the second layer (42). [9] Optoelectronic component (100) according to one of claims 1 to 6, wherein the conversion element (4) is formed as a layer system of at least two layers (41, 42), wherein the first layer (41) comprises the first phosphor (9) and the second layer (42) comprises the second phosphor (10), wherein the second layer (42) is arranged between the semiconductor chip (2) and the first layer (41). [10] Optoelectronic component (100) according to one of the preceding claims, wherein the blue spectral range has a peak wave maximum between 380 nm and 480 nm. [11] Backlight for a display comprising at least one optoelectronic component (100) according to one of claims 1 to 10.

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