Silicon wafers and methods for their production
By controlling boron and oxygen concentrations and applying heat treatment or timely cutting, the method addresses unevenly distributed LPDs in silicon wafers, enhancing their suitability for semiconductor devices.
DE112015002599B4Active Publication Date: 2025-12-18SUMCO CORP
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Patent Information
- Application Number
- DE112015002599
- Authority / Receiving Office
- DE · DE
- Patent Type
- Patents
- Current Assignee / Owner
- Filing Date
- 2015-04-10
- Publication Date
- 2025-12-18
- Estimated Expiration
- 2035-04-10
AI Technical Summary
Technical Problem
Existing silicon wafers contain unevenly distributed LPDs related to boron and oxygen donor concentrations, which could potentially cause issues in the microfabrication of semiconductor devices, despite their low current density.
Method used
A method to produce silicon wafers by controlling boron and oxygen donor concentrations and applying heat treatment at 300°C or more when necessary, or cutting wafers within 50 days of ingot growth, to eliminate or reduce unevenly distributed LPDs.
Benefits of technology
The method effectively reduces or eliminates unevenly distributed LPDs, ensuring high-quality silicon wafers suitable for semiconductor devices with reduced defects.
✦ Generated by Eureka AI based on patent content.
Abstract
A method for producing a silicon wafer, characterized in that it comprises: a step to cut a silicon single crystal containing boron as an acceptor to obtain a non-heat-treated silicon wafer, which is a wafer that has not been subjected to heat treatment at a temperature of 300°C or more; a step towards determining a boron concentration with respect to the unheat-treated silicon wafer; and a step towards determining an oxygen donor concentration with respect to the non-heat-treated silicon wafer; wherein a determination of whether a heat treatment at a temperature of 300°C or more and 800°C or less should be carried out on the non-heat-treated silicon wafer is made on the basis of a boron concentration, determined in the step to determine a boron concentration, and an oxygen donor concentration, determined in the step to determine an oxygen donor concentration, where in one case, if a condition exists that the boron concentration is 5x10 14 atoms / cm² 3 or more and 7×10 14 atoms / cm² 3 or less and the oxygen donor concentration is 4×10 14 Donors / cm 3 or more and 8×10 14 Donors / cm 3or less, is not fulfilled with regard to the non-heat-treated silicon wafer, the provision is a provision to carry out polishing with regard to the non-heat-treated silicon wafer without carrying out heat treatment with it at a temperature of 300°C or more.
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