Semiconductor device, manufacturing method of semiconductor device, photo-electric conversion system, and mobile body

Abstract

To provide a semiconductor device which is easily manufactured and has a structure excellent in reliability.SOLUTION: A semiconductor device includes a structure in which a plurality of semiconductor layers including first and second semiconductor layers and an insulation structure alternately insulating the plurality of semiconductor layers are laminated. The insulation structure includes a first insulation layer arranged between the first semiconductor layer and the second semiconductor layer. The semiconductor device includes: a conductive penetration vias penetrating the second semiconductor layer; a wiring pattern arranged in the first insulation layer; and a conductive connection member arranged in the first insulation layer so as to electrically connect the penetration via and the wiring pattern.SELECTED DRAWING: Figure 7

Description

Technical Field

[0001] The present invention relates to a semiconductor device, a method for manufacturing a semiconductor device, a photoelectric conversion system, and a moving body.

Background Art

[0002] Patent Document 1 describes a process of forming a structure having a silicon substrate and a wiring layer, then forming a through hole that penetrates the silicon substrate and reaches an electrode in the wiring layer, forming an insulating film on the side surface of the through hole, and then forming a through via in the through hole. However, when a thin and deep through hole is required, it becomes difficult to form the through hole by etching. Also, when forming a through hole so as to reach an electrode or a wiring pattern, the etching damage to the electrode or the wiring pattern can reduce the reliability.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] One aspect of the present invention aims to provide a semiconductor device having a structure that is easy to manufacture and has excellent reliability.

Means for Solving the Problems

[0005] One aspect of the present invention relates to a semiconductor device having a structure in which a plurality of semiconductor layers including a first semiconductor layer and a second semiconductor layer are stacked, and an insulating structure that insulates the plurality of semiconductor layers from each other, the insulating structure including a first insulating layer disposed between the first semiconductor layer and the second semiconductor layer. The semiconductor device includes a conductive through-via that penetrates the second semiconductor layer, a wiring pattern disposed in the first insulating layer, and a conductive connecting member disposed in the first insulating layer to electrically connect the through-via and the wiring pattern.

Advantages of the Invention

[0006] According to one aspect of the present invention, there is provided a semiconductor device having a structure that is easy to manufacture and has excellent reliability.

Brief Description of the Drawings

[0007]

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Best Mode for Carrying Out the Invention

[0008] Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. Note that the following embodiments do not limit the invention according to the claims. Although a plurality of features are described in the embodiments, not all of these plurality of features are essential to the invention, and the plurality of features may be arbitrarily combined. Further, in the accompanying drawings, the same or similar configurations are denoted by the same reference numerals, and redundant descriptions are omitted.

[0009] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the following description, terms indicating specific directions and positions (for example, "upper", "lower", "right", "left", and other terms including these terms) are used as necessary. The use of these terms is for facilitating the understanding of the embodiments with reference to the drawings, and the technical scope of the present invention is not limited by the meanings of these terms.

[0010] In this specification, a plan view means viewing a semiconductor device from a direction perpendicular to the main surface (one of the two widest surfaces, preferably the flatter surface) of a semiconductor layer, and is synonymous with an orthographic projection onto the main surface. Further, a cross-sectional view means a plane in a direction perpendicular to the main surface. When the main surface is a rough surface when viewed microscopically, the plan view is defined based on the main surface when viewed macroscopically.

[0011] In the following exemplary embodiments, a semiconductor device configured as a photoelectric conversion device having an avalanche photodiode (hereinafter also referred to as APD) as a photoelectric conversion element will be described, but the semiconductor device may be configured as a semiconductor device having no photoelectric conversion function.

[0012] In the description of the following exemplary embodiments, the anode of the avalanche photodiode is set to a fixed potential, and the signal is taken out from the cathode side. Therefore, the semiconductor region of the first conductivity type having majority carriers of the same first polarity as the signal charge is an N-type semiconductor region, and the semiconductor region of the second conductivity type having majority carriers of the second polarity different from the signal charge is a P-type semiconductor region. Note that the present invention is also valid when the cathode of the APD is set to a fixed potential and the signal is taken out from the anode side. In this case, the semiconductor region of the first conductivity type having majority carriers of the same first polarity as the signal charge is a P-type semiconductor region, and the semiconductor region of the second conductivity type having majority carriers of the second polarity different from the signal charge is an N-type semiconductor region. Hereinafter, the case where one of the nodes of the APD is set to a fixed potential will be described, but the potentials of both nodes may vary.

[0013] In this specification, when the term "impurity concentration" is simply used, it means the net impurity concentration obtained by subtracting the amount compensated by the impurity of the opposite conductivity type. That is, the "impurity concentration" refers to the NET doping concentration. A region where the P-type added impurity concentration is higher than the N-type added impurity concentration is a P-type semiconductor region. Conversely, a region where the N-type added impurity concentration is higher than the P-type added impurity concentration is an N-type semiconductor region.

[0014] First, the basic configuration and driving method common to the photoelectric conversion devices and their driving methods of a plurality of embodiments to be described later will be described with reference to FIGS. 1, 2, 3, 4, 5, and 6.

[0015] FIG. 1 is a diagram showing the basic configuration of a photoelectric conversion device 100 according to an embodiment. Here, an example in which the photoelectric conversion device 100 is configured as a stacked photoelectric conversion device will be described. The photoelectric conversion device 100 can be configured by stacking a plurality of substrates including, for example, a sensor substrate 11, a first circuit substrate 21, and a second circuit substrate 31, and electrically connecting the plurality of substrates. The sensor substrate 11 may have a pixel array region 12 in which a plurality of photoelectric conversion elements 102 described later are arranged. Further, the sensor substrate 11 may have a first semiconductor layer having the photoelectric conversion element 102 described later and a first wiring structure. The first circuit substrate 21 may have a first circuit region 22 in which circuits such as a first signal processing unit 103A described later are arranged. Further, the first circuit substrate 21 may have a second semiconductor layer in which a plurality of elements (for example, transistors) constituting circuits such as the first signal processing unit 103A described later are arranged and a second wiring structure. The second circuit substrate 31 may have a second circuit region 32 in which circuits of a second signal processing unit 103B, a vertical scanning circuit 110, a horizontal scanning circuit 111, and a readout circuit 112 described later are arranged. Further, the second circuit substrate 31 may have a second semiconductor layer in which a plurality of elements (for example, transistors) constituting circuits such as the second signal processing unit 103B described later are arranged and a second wiring structure. The photoelectric conversion device described as the following embodiment may be, for example, a back-illuminated photoelectric conversion device, but the photoelectric conversion device according to the present invention may be configured as a front-illuminated photoelectric conversion device.

[0016] The sensor substrate 11, the first circuit substrate 21, and the second circuit substrate 31 can each be a chip diced from a wafer, but these substrates are not limited to chips. For example, each substrate may be a wafer. Further, the plurality of substrates may be diced after being stacked in a wafer state, or a plurality of chips may be stacked or joined after being chipped.

[0017] FIG. 2 is a diagram showing a configuration example of the sensor substrate 11. In the pixel array region 12, a plurality of photoelectric conversion elements 102 can be arranged in a two-dimensional array so as to form a plurality of rows and a plurality of columns. Each photoelectric conversion element 102 may include an avalanche photodiode (APD). Each photoelectric conversion element 102 forms part of a pixel 101.

[0018] The pixels 101 arranged in the pixel array region 12 can be pixels for forming an image. However, when the sensor substrate 11 or the photoelectric conversion device 100 is applied to TOF (Time of Flight), each pixel 101 does not necessarily have to be a pixel for forming an image. That is, the pixel 101 may be a pixel for measuring the arrival time and the amount of light of the light.

[0019] FIG. 3 is a diagram showing a configuration example of the first circuit board 21. The first circuit board 21 may include, for example, a first signal processing unit 103A that processes a signal (electrical signal) generated according to a charge (signal charge) generated by photoelectric conversion by the photoelectric conversion element 102. The first signal processing unit 103A may include, for example, a quench element 202 (described later) and a waveform shaping unit 210 (described later) of each pixel 101.

[0020] FIG. 4 is a diagram showing a configuration example of the second circuit board 31. The second circuit board 31 may include a second signal processing unit 103B, a readout circuit 112, a control pulse generation unit 115, a horizontal scanning circuit 111, signal lines 113 and 116, a vertical scanning circuit 110, and an output circuit 114. The second signal processing unit 103B may include, for example, a counter circuit 211 (described later) and a selection circuit 212 (described later) for each pixel 101, as well as a plurality of signal lines 113 and a plurality of drive lines 116 arranged along the pixel array region 12. The vertical scanning circuit 110 may be configured to generate a second control pulse in response to a first control pulse supplied from the control pulse generation unit 115 and supply the second control pulse to each pixel 101. The vertical scanning circuit 110 may include, for example, logic circuits such as a shift register and an address decoder. The signal output from the photoelectric conversion element 102 of the pixel 101 may be processed by the signal processing unit 103 provided corresponding to that pixel 101. The signal processing unit 103 may include a counter having a memory. The horizontal scanning circuit 111 may be configured to supply a third control pulse for sequentially selecting each column to the signal processing unit 103 in order to read a signal from the counter (memory) of each pixel 101 holding a digital signal. Signals are output from the second signal processing unit 103B assigned to the pixels 101 in the row selected by the vertical scanning circuit 110 to the plurality of signal lines 113. The signals output to the plurality of signal lines 113 may be output to a recording unit or a signal processing unit outside the photoelectric conversion device 100 via the output circuit 114.

[0021] In FIG. 2, the arrangement of the photoelectric conversion elements 102 or the pixels 101 in the pixel array region 12 may be one-dimensional. One set of signal processing units 103A and 103B may be assigned to at least two photoelectric conversion elements 102 or pixels 101.

[0022] As shown in FIGS. 2, 3, and 4, a plurality of first signal processing units 103A and a plurality of second signal processing circuits 103B can be arranged in a region overlapping the pixel array region 12 in a plan view. And, in a plan view, a vertical scanning circuit 110, a horizontal scanning circuit 111, a reading circuit 112, an output circuit 114, and a control pulse generation unit 115 can be arranged so as to overlap a region between the outer edge of the sensor substrate 11 and the outer edge of the pixel array region 12. In other words, in a plan view, the vertical scanning circuit 110, the horizontal scanning circuit 111, the reading circuit 112, the output circuit 114, and the control pulse generation unit 115 can be arranged in a region overlapping the peripheral region of the sensor substrate 11.

[0023] FIG. 5 illustrates an equivalent circuit of one pixel 101 that can be composed of one photoelectric conversion element 102, one first signal processing unit 103A, and one second signal processing circuit 103B. The photoelectric conversion element 102 includes an APD 201, and the APD 201 generates charge pairs corresponding to incident light by photoelectric conversion. A voltage VL (first voltage) is supplied to the anode of the APD 201. Also, a voltage VH (second voltage) higher than the voltage VL supplied to the anode can be supplied to the cathode of the APD 201. A reverse bias voltage (predetermined voltage) at which the APD 201 can cause an avalanche multiplication operation can be supplied between the anode and the cathode. By setting such a reverse bias voltage between the anode and the cathode, the charge generated by the incident light causes an avalanche multiplication operation, and an avalanche current can be generated.

[0024] A mode in which the APD is operated at a voltage higher than the breakdown voltage between the anode and the cathode is called the Geiger mode. A mode in which the APD is operated at a voltage near or below the breakdown voltage between the anode and the cathode is called the linear mode. An APD operated in the Geiger mode is called an SPAD. For example, the voltage VL (first voltage) is -30V, and the voltage VH (second voltage) is 1V. The APD 201 may be operated in the linear mode or the Geiger mode.

[0025] The first signal processing unit 103A may include a quench element 202 and a waveform shaping unit 210. The quench element 202 may be arranged to connect a power supply that supplies the voltage VH and the APD 201. The quench element 202 functions as a load circuit (quench circuit) during signal multiplication by avalanche multiplication operation, and has a function of suppressing the voltage supplied to the APD 201 to suppress avalanche multiplication (quench operation). Further, the quench element 202 has a function of returning the voltage supplied to the APD 201 to the voltage VH by flowing a current corresponding to the voltage drop during the quench operation (recharge operation). The waveform shaping unit 210 may shape the potential change of the cathode of the APD 201 obtained at the time of photon detection and output a pulse signal. As the waveform shaping unit 210, for example, an inverter circuit may be used. In FIG. 5, the waveform shaping unit 210 is composed of one inverter, but the waveform shaping unit 210 may include a series connection of a plurality of inverters or may include other circuits having a waveform shaping effect.

[0026] The second signal processing unit 103B may include a counter circuit 211 and a selection circuit 212. The counter circuit 211 may count the pulse signal output from the waveform shaping unit 210 and hold the count value. Further, the counter circuit 211 may be configured to reset the signal held in the counter circuit 211 when a control pulse pRES is supplied via the drive line 213. A control pulse pSEL is supplied to the selection circuit 212 from the vertical scanning circuit 110 via the drive line 214, and the electrical connection and disconnection between the counter circuit 211 and the signal line 113 can be switched. The selection circuit 212 may include, for example, a buffer circuit for outputting a signal.

[0027] A switch such as a transistor may be arranged between the quench element 202 and the APD 201 and / or between the APD 201 and the waveform shaping unit 210, and the electrical connection may be controlled by the switch. Similarly, the supply of the voltage VH and / or the voltage VL to the APD 201 may be controlled by a switch such as a transistor.

[0028] The photoelectric conversion device 100 may be configured to obtain pulse detection timing using a time-to-digital converter (hereinafter referred to as TDC) and a memory instead of the counter circuit 211. The generation timing of the pulse signal output from the waveform shaping unit 210 can be converted into a digital signal by the TDC. A control pulse pREF (reference signal) can be supplied to the TDC from the vertical scanning circuit 110 via a driving line for measuring the timing of the pulse signal. The TDC can obtain, as a digital signal, a signal when the input timing of the signal output from each pixel via the waveform shaping unit 210 is regarded as a relative time with respect to the control pulse pREF.

[0029] FIG. 6 is a diagram schematically showing the relationship between the operation of the APD 201 and the output signal. FIG. 6(a) is a diagram showing an excerpt of the APD 201, the quench element 202, and the waveform shaping unit 210 from FIG. 5. Here, the input side of the waveform shaping unit 210 is node A, and the output side is node B. FIG. 6(b) shows the waveform change of node A in FIG. 6(a), and FIG. 6(c) shows the waveform change of node B in FIG. 6(a).

[0030] Between time t0 and time t1, a potential difference of VH - VL is applied to the APD 201 in FIG. 6(a). When photons enter the APD 201 at time t1, an avalanche multiplication operation is caused in the APD 201, an avalanche multiplication current flows through the quench element 202, and the voltage at node A drops. When the voltage drop amount becomes even larger and the potential difference applied to the APD 201 becomes smaller, the avalanche multiplication operation of the APD 201 stops at time t2, and the voltage level at node A no longer drops below a certain value. Thereafter, between time t2 and time t3, a current for compensating the voltage drop flows from the voltage VL to node A, and at time t3, node A settles to the original potential level. At this time, the portion where the output waveform at node A exceeds a certain threshold is waveform-shaped by the waveform shaping unit 210 and output as a signal at node B.

[0031] Note that the arrangement of the signal line 113, the arrangement of the readout circuit 112, and the arrangement of the output circuit 114 are not limited to the arrangements illustrated in FIG. 4. For example, the signal line 113 may be arranged to extend in the row direction, and the readout circuit 112 may be arranged at the end where the signal line 113 extends.

[0032] FIG. 7 schematically shows a cross-sectional structure of a photoelectric conversion device 100 as a semiconductor device of the first embodiment. The photoelectric conversion device 100 may have a structure in which a plurality of semiconductor layers including a first semiconductor layer SL1 and a second semiconductor layer SL2 and an insulating structure IST that insulates the plurality of semiconductor layers from each other are stacked. The insulating structure IST may include a first insulating layer IL1 disposed between the first semiconductor layer SL1 and the second semiconductor layer SL2. The insulating structure IST may further include a second insulating layer IL2. The second semiconductor layer SL2 may be disposed between the first insulating layer IL1 and the second insulating layer IL2. The plurality of semiconductor layers may further include a third semiconductor layer SL3, and the second insulating layer IL2 may be disposed between the second semiconductor layer SL2 and the third semiconductor layer SL3.

[0033] On the other hand, the photoelectric conversion device 100 may include a conductive through-via 219 that penetrates the second semiconductor layer SL2 and a wiring pattern 217 disposed in the insulating structure IST. Further, the photoelectric conversion device 100 may include a conductive connection member 215 disposed in the insulating structure IST so as to electrically connect the through-via 219 and the wiring pattern 217.

[0034] The first insulating layer IL1 may include an insulating layer IL11 and an insulating layer IL12 joined to each other. The second insulating layer IL2 may include an insulating layer IL21 and an insulating layer IL22 joined to each other. The first semiconductor layer SL1 and the insulating layer IL11 may constitute the sensor substrate 11. The second semiconductor layer SL2, the insulating layers IL12 and IL21 may constitute the first circuit board 21. The third semiconductor layer SL3 and the insulating layer IL22 may constitute the second circuit board 31. A bonding electrode E11 is disposed on the insulating layer IL11, a bonding electrode E12 is disposed on the insulating layer IL12, and the bonding electrode E11 and the bonding electrode E12 may form a metal bonding surface. A bonding electrode E21 is disposed on the insulating layer IL21, a bonding electrode E22 is disposed on the insulating layer IL22, and the bonding electrode E21 and the bonding electrode E22 may form a metal bonding surface.

[0035] The photoelectric conversion device 100 or the first circuit board 21 may include a conductive through-via 219 that penetrates the second semiconductor layer SL2. The through-via 219 may be formed of, for example, tungsten, but may also be formed of other materials such as aluminum or copper. The through-via 219 may be disposed so as to penetrate an insulator INS disposed in a through-hole TH of the second semiconductor layer SL2. The photoelectric conversion device 100 or the first circuit board 21 may have a wiring pattern 217 disposed in the first insulating layer IL1 (insulating layer IL12). The wiring pattern 217 may be formed of, for example, copper or aluminum, but may also be formed of other materials. The photoelectric conversion device 100 or the first circuit board 21 may include a conductive connection member 215 disposed in the first insulating layer IL1 (insulating layer IL12) so as to electrically connect the through-via 219 and the wiring pattern 217. The connection member 215 may be formed of, for example, tungsten, but may also be formed of other materials such as aluminum or copper. The connection member 215 may be, for example, a plug.

[0036] According to the configuration in which the through via 219 is electrically connected to the wiring pattern 217 via the connection member 215, the height of the through via 219 can be reduced, in other words, the depth of the through hole for forming the through via 219 can be reduced. This is advantageous for stably forming the fine through via 219. In addition, such a structure is also advantageous in that it does not cause etching damage to the wiring pattern 217 when the through hole for forming the through via 219 is formed by etching.

[0037] Also, when the wiring pattern 217 contains copper, it is advantageous to form the connection member 215 from a material that does not contain copper, and to stop the dry etching process for forming the through hole for the through via 219 at the connection member 215. This is because if etching is stopped at the wiring pattern 217 containing copper, the wiring pattern 217 containing copper will be exposed to the etching environment for a long period of time, which may cause problems. More specifically, since the copper-containing material that may be generated by exposing the wiring pattern 217 containing copper to the etching environment is non-volatile, it is not exhausted from the chamber, but is deposited in the chamber and may react with various gases. Therefore, the copper-containing material deposited in the chamber may cause the etching rate of the dry etching device to fluctuate, that is, may be a factor that makes the process unstable.

[0038] 8 shows an enlarged schematic diagram of the configuration of the connection portion between the through via 219 and the connection member 215 in FIG. 7. As shown in FIG. 8, in the connection portion between the through via 219 and the connection member 215, the width of the connection member 215 can be made larger than the width of the through via 219. More specifically, the width of the connection member 215 on a plane P1 including the interface between the through via 219 and the connection member 215 can be made larger than the width of the through via 219 on the plane P1. This can ease the requirement for accuracy of alignment of the through via 219 with respect to the connection member 215.

[0039] FIG. 9 shows an enlarged schematic view of a modified configuration of the connection portion between the through via 219 and the connection member 215 in FIG. 7. As schematically shown in FIG. 9, the width of the through via 219 in the connection portion between the through via 219 and the connection member 215 can be made larger than the width of the connection member 215. More specifically, the width of the through via 219 in the plane P2 including the end face of the through via 219 (the end face on the side of the connection member 215) can be made larger than the width of the connection member 215 in the plane P2. This can relax the requirement for the alignment accuracy of the through via 219 with respect to the connection member 215.

[0040] As schematically shown in FIGS. 7, 8, and 9, in the connection portion between the connection member 215 and the wiring pattern 217, it is preferable that the width of the wiring pattern 217 is larger than the width of the connection member 215. This can relax the requirement for the alignment accuracy between the connection member 215 and the wiring pattern 217. Conversely, in the connection portion between the connection member 215 and the wiring pattern 217, the width of the connection member 215 may be made larger than the width of the wiring pattern 217, and in this case as well, the requirement for the alignment accuracy between the connection member 215 and the wiring pattern 217 can be relaxed.

[0041] As schematically shown in FIGS. 7, 8, and 9, the insulating structure IST can include a first film 218 having a first opening OP1 and a second film 216 having a second opening OP2 and arranged to overlap the first film 218. The through via 219 can include a portion disposed in the first opening OP1, and the connection member 215 can be disposed in the second opening OP2.

[0042] The through via 219 can have a tapered shape in which the width decreases toward the connection member 215. The connection member 215 can have a tapered shape in which the width decreases toward the through via 219. The through hole TH in the second semiconductor layer SL2 can have, for example, a tapered shape in which the width increases toward the first semiconductor layer SL1, but conversely, it may have a tapered shape in which the width decreases toward the first semiconductor layer SL1.

[0043] The thickness of the second semiconductor layer SL2 is preferably smaller than the thicknesses of the semiconductor layers other than the second semiconductor layer SL among the plurality of semiconductor layers. For example, the thickness of the second semiconductor layer SL2 is preferably smaller than the thicknesses of the first semiconductor layer SL1 and the third semiconductor layer SL3. This is advantageous for reducing the height of the through via 219.

[0044] FIG. 10 schematically shows a cross-sectional structure of a photoelectric conversion device 100 as a semiconductor device of a first modification. Matters not mentioned as the first modification may follow the first embodiment schematically shown in FIG. 7 as long as there is no contradiction. Also in the first modification, the photoelectric conversion device 100 may include a conductive through via 219 that penetrates the second semiconductor layer SL2, and a wiring pattern 217 disposed in the insulating structure IST. Further, the photoelectric conversion device 100 may include a conductive connection member 215 disposed in the insulating structure IST so as to electrically connect the through via 219 and the wiring pattern 217. The through via 219 may be disposed so as to connect the bonding electrode E12 and the connection member 215. From another viewpoint, the through via 219 may be disposed so as to contact the bonding electrode E12 and the connection member 215. The through via 219 may have a tapered shape whose width decreases toward the connection member 215. The connection member 215 may have a tapered shape whose width decreases toward the through via 219.

[0045] FIG. 11A is a schematic plan view showing the configuration of a photoelectric conversion device 100 according to an embodiment, and FIG. 11B is a schematic cross-sectional view taken along line B-B' of FIG. 11A. The configuration of the peripheral portion in the photoelectric conversion device 100 will be exemplarily described with reference to FIGS. 11A and 11B. The photoelectric conversion device 100 may include a guard ring 41 disposed between the pixel array region 12 and the edge EP. The guard ring 41 may include a through via 219' having a cross-sectional structure similar to that of the through via 219 and the connection member 215, and connection members 215'. Further, the guard ring 41 may include joint portions E11', E12', 21', E21' having a cross-sectional structure similar to that of the bonding electrodes E11, E12, 21, E21. The photoelectric conversion device 100 may include a pad PAD disposed between the guard ring 41 and the pixel array region, and a pad opening 42 for exposing the pad PAD.

[0046] Hereinafter, a method for manufacturing the photoelectric conversion device 100 according to the first embodiment will be exemplarily described with reference to FIGS. 12A, 12B, and 12C. First, in STEP1, a groove to be a through-hole TH is formed in the second semiconductor layer SL2 (more precisely, the second semiconductor substrate for forming the second semiconductor layer SL2), and an insulator INS can be formed in the groove. Also, in STEP1, for example, a transistor can be formed. Note that the through-hole TH and the insulator INS may be formed after the bonding of the sensor substrate 11 and the first circuit substrate 21, that is, in STEP6 described later.

[0047] In STEP2, a first film 218 and a second film 216 can be sequentially formed on the second semiconductor layer SL2. The first film 218 can be, for example, a silicon nitride film. The second film 216 can be, for example, a silicon oxide film.

[0048] In STEP3, the second opening OP2 is formed by etching the second film 216 using the first film 218 as an etching stopper film, and a connection member 215 is formed in the second opening OP2. The connection member 215 can be formed of, for example, tungsten, but may be formed of other materials such as aluminum or copper.

[0049] In STEP4, a wiring structure including a wiring layer can be further formed on the connection member 215. Thereby, the first circuit substrate 21 can be formed. In STEP5, the sensor substrate 11 (the first substrate) prepared in the step of preparing the sensor substrate 11 (the first substrate) not shown and the first circuit substrate 21 (the second substrate) formed in STEPs 1 to 4 can be bonded. At this time, the bonding electrode E11 and the bonding electrode E12 can be bonded.

[0050] In STEP6, the second semiconductor substrate can be thinned and the second semiconductor layer SL2 can be formed as necessary. In STEP7, the insulating layer IL21 is formed, and further, a through hole is formed in the insulating layer IL21 and the second semiconductor layer SL2 so as to penetrate the insulator INS in the through hole TH, and a through via 219 can be formed by filling the through hole with a conductive material. Thereby, a through via 219 that penetrates the second semiconductor layer SL2 and reaches the connection member 215 is formed. The through via 219 can be formed of, for example, tungsten, but may be formed of other materials such as aluminum or copper. The through hole for forming the through via 219 can be formed by etching the insulating layer IL21 and the second semiconductor layer SL2 using the connection member 215 as an etching stop. When forming the photoelectric conversion device 100 schematically shown in FIG. 10, after forming the through via 219 in the first circuit board 21 (second board), the sensor board 11 and the first circuit board 21 can be joined.

[0051] Hereinafter, a photoelectric conversion device 100 having the structure schematically shown in FIG. 7 can be obtained by joining the second circuit board 31 to the first circuit board 21.

[0052] FIG. 13 schematically shows a cross-sectional structure of a photoelectric conversion device 100 as a semiconductor device of the second modification. Matters not mentioned as the second modification can follow the first embodiment or the first modification as long as there is no contradiction. In the second modification, the connection member 215 can include a conductive pattern 221 arranged to be in electrical contact with the through via 219, and a plug 222 that electrically connects the conductive pattern 221 and the wiring pattern 217. The conductive pattern 221 can be formed of, for example, aluminum or tungsten.

[0053] FIG. 14 is a schematic cross-sectional view showing the configuration of the photoelectric conversion device 100 of the second modification. FIG. 14 corresponds to a schematic cross-sectional view taken along line B-B' of FIG. 11A. The photoelectric conversion device 100 may include a guard ring 41 disposed between the pixel array region 12 and the edge EP. The guard ring 41 may include a through-via 219, a through-via 219' having a cross-sectional structure similar to that of the connection member 215, and a connection member 215'. The connection member 215' may include a conductive pattern 221, a plug 222, a conductive pattern 221', and a plug 222' each having a cross-sectional structure similar to that of the plug 222. Further, the guard ring 41 may include joints E11', E12', 21', E21' having a cross-sectional structure similar to that of the bonding electrodes E11, E12, 21, E21. The photoelectric conversion device 100 may include a pad PAD disposed between the guard ring 41 and the pixel array region 12, and a pad opening 42 for exposing the pad PAD.

[0054] FIG. 15 schematically shows a cross-sectional structure of the photoelectric conversion device 100 as a semiconductor device of the third modification. Matters not mentioned as the third modification may follow the first embodiment, the first modification, or the second modification as long as there is no contradiction. In the third modification, a second through-via 219a penetrating an insulator INS disposed in the through-hole TH is provided in parallel with the through-via 219. Further, in the third modification, a conductive plug 222a (second connection member) disposed in an insulating structure INS (first insulating layer IL1) so as to electrically connect the second through-via 219a and the wiring pattern 217 may be provided in parallel with the plug 222 (connection member). The conductive pattern 221 as a part of the connection member may be shared by the through-via 219 and the second through-via 219a, or may be provided individually. From another viewpoint, the conductive pattern 221 as a part of the connection member may be shared by the through-via 219 and the second through-via 219a, or may be provided individually. Such a configuration is advantageous for improving the yield.

[0055] Hereinafter, with reference to FIGS. 16A, 16B, and 16C, a manufacturing method of the photoelectric conversion device 100 of the second modification schematically shown in FIG. 13 will be exemplarily described. First, in STEP1, a groove to be a through hole TH is formed in the second semiconductor layer SL2 (more precisely, the second semiconductor substrate for forming the second semiconductor layer SL2), and an insulator INS is formed in the groove. Also, in STEP1, for example, a transistor may be formed. Note that the through hole TH and the insulator INS may be formed after the bonding of the sensor substrate 11 and the first circuit substrate 21, that is, in STEP6 described later.

[0056] In STEP2, a first film 218 is formed on the second semiconductor layer SL2, a conductive pattern 221 is formed on the first film 218, and a second film 216 may be formed on the conductive pattern 221. The first film 218 may be, for example, a silicon nitride film. The conductive pattern 221 may be formed of, for example, aluminum or tungsten. The second film 216 may be, for example, a silicon oxide film.

[0057] In STEP3, the second opening OP2 is formed by etching the second film 216 using the conductive pattern 221 as an etching stopper film, and a connection member 215 may be formed in the second opening OP2. The connection member 215 may be formed of, for example, tungsten, but may be formed of other materials such as aluminum or copper.

[0058] In STEP4, a wiring structure including a wiring layer may be further formed on the connection member 215. Thereby, the first circuit substrate 21 may be formed. In STEP5, the sensor substrate 11 (the first substrate) prepared in the step of preparing the sensor substrate 11 (the first substrate) not shown and the first circuit substrate 21 (the second substrate) formed in STEPs 1 to 4 may be bonded. At this time, the bonding electrode E11 and the bonding electrode E12 may be bonded.

[0059] In STEP6, if necessary, the second semiconductor substrate can be thinned and the second semiconductor layer SL2 can be formed. In STEP7, the insulating layer IL21 is formed, and further, through holes are formed in the insulating layer IL21, the second semiconductor layer SL2, and the first film 218 so as to penetrate the insulator INS and the first film 218 in the through hole TH. Then, a through via 219 can be formed by filling the through hole with a conductive material. Thereby, a through via 219 that penetrates the second semiconductor layer SL2 and the first film 216 and reaches the conductive pattern 221 is formed. The through via 219 can be formed of, for example, tungsten, but may be formed of other materials such as aluminum or copper. The through hole for forming the through via 219 can be formed by etching the insulating layer IL21, the second semiconductor layer SL2, and the second film 218 using the conductive pattern 221 as an etching stop.

[0060] Hereinafter, application examples of the above-described photoelectric conversion device 100 will be described as the second to eighth embodiments.

[0061] The photoelectric conversion system according to the second embodiment will be described with reference to FIG. 17. FIG. 17 is a block diagram showing a schematic configuration of the photoelectric conversion system according to the second embodiment.

[0062] The above-described photoelectric conversion device 100 is applicable to various photoelectric conversion systems. Examples of applicable photoelectric conversion systems include digital still cameras, digital camcorders, surveillance cameras, copiers, fax machines, mobile phones, in-vehicle cameras, observation satellites, and the like. In addition, a camera module including an optical system such as a lens and an imaging device is also included in the photoelectric conversion system. FIG. 7 illustrates a block diagram of a digital still camera as an example of these.

[0063] The photoelectric conversion system 1000 illustrated in FIG. 17 has an imaging device 1004 which is an example of a photoelectric conversion device. The photoelectric conversion system 1000 also has a lens 1002 that forms an optical image of a subject on the imaging device 1004, a diaphragm 1003 for variably controlling the amount of light passing through the lens 1002, and a barrier 1001 for protecting the lens 1002. The lens 1002 and the diaphragm 1003 are an optical system (optical device) that condenses light onto the imaging device 1004. The imaging device 1004 is the above-described photoelectric conversion device 100 (imaging device), and converts the optical image formed by the lens 1002 into an electrical signal.

[0064] The photoelectric conversion system 1000 also has a signal processing unit 1007 which is an image generation unit that generates an image by processing the output signal output by the imaging device 1004. The signal processing unit 1007 functions as a processing device that performs operations such as various corrections and compressions as necessary and outputs image data. The signal processing unit 1007 may be formed on the semiconductor substrate on which the imaging device 1004 is provided, or may be formed on a semiconductor substrate different from the imaging device 1004. Further, the imaging device 1004 and the signal processing unit 1007 may be formed on the same semiconductor substrate.

[0065] The photoelectric conversion system 1000 further has a memory unit 1010 for temporarily storing image data, and an external interface unit (external I / F unit) 1013 for communicating with an external computer or the like. Further, the photoelectric conversion system 1000 has a recording medium 1012 such as a semiconductor memory for recording or reading imaging data, and a recording medium control interface unit (recording medium control I / F unit) 1011 for recording or reading from the recording medium 1012. The recording medium control I / F unit 1011 and the recording medium 1012 may constitute a part of the storage device. Note that the recording medium 1012 may be built into the photoelectric conversion system 1000, or may be detachable.

[0066] Furthermore, the photoelectric conversion system 1000 includes an overall control and arithmetic unit 1009 that controls various operations and the entire digital still camera, and a timing generation unit 1008 that outputs various timing signals to the imaging device 1004 and the signal processing unit 1007. The overall control and arithmetic unit 1009 and the timing generation unit 1008 may constitute a part of a control device for controlling the operation of the photoelectric conversion system 1000. Here, the timing signal and the like may be input from the outside, and the photoelectric conversion system 1000 may have at least the imaging device 1004 and the signal processing unit 1007 that processes the output signal output from the imaging device 1004.

[0067] The imaging device 1004 outputs an imaging signal to the signal processing unit 1007. The signal processing unit 1007 performs predetermined signal processing on the imaging signal output from the imaging device 1004 and outputs image data. The signal processing unit 1007 generates an image using the imaging signal. Although not shown in FIG. 17, a display device such as a display for displaying the generated image may be arranged in the photoelectric conversion system 1000. Thus, according to the present embodiment, a photoelectric conversion system 1000 to which the photoelectric conversion device 100 (imaging device) of any of the above embodiments is applied can be realized.

[0068] The photoelectric conversion system 1300 and the moving body 1301 of the third embodiment will be described with reference to FIGS. 18(a) and 18(b). FIGS. 18(a) and 18(b) are diagrams showing the configurations of the photoelectric conversion system 1300 and the moving body 1301 of the third embodiment.

[0069] FIG. 18(a) shows an example of a photoelectric conversion system related to an in-vehicle camera. The photoelectric conversion system 1300 includes an imaging device 1310. The imaging device 1310 is the above-described photoelectric conversion device 100 (imaging device). The photoelectric conversion system 1300 includes an image processing unit 1312 that performs image processing on a plurality of pieces of image data acquired by the imaging device 1310. Further, the photoelectric conversion system 1300 includes a distance acquisition unit 1316 that calculates the distance to an object, and a collision determination unit 1318 that determines whether there is a possibility of collision based on the calculated distance. Here, the distance acquisition unit 1316 may acquire distance information to the object using the Time of Flight (ToF) method, or may acquire distance information using parallax information or the like. That is, the distance information is information related to parallax, defocus amount, distance to the object, and the like. The collision determination unit 1318 may determine the possibility of collision using any of these distance information. The distance acquisition unit 1316 may be realized by dedicatedly designed hardware, or may be realized by a software module. Further, the distance acquisition unit 1316 may be realized by an FPGA (Field Programmable Gate Array), an ASIC (Application Specific Integrated Circuit), or the like. Further, the distance acquisition unit 1316 may be realized by a combination of these.

[0070] The photoelectric conversion system 1300 is connected to a vehicle information acquisition device 1320 and can acquire vehicle information such as vehicle speed, yaw rate, and steering angle. Further, the photoelectric conversion system 1300 is connected to an ECU 1330 which is a control device that outputs a control signal for generating a braking force for the vehicle based on the determination result of the collision determination unit 1318. Further, the photoelectric conversion system 1300 is also connected to an alarm device 1340 that issues an alarm to the driver based on the determination result of the collision determination unit 1318. For example, when the collision determination unit 1318 determines that there is a high possibility of collision, the ECU 1330 controls a drive device (mechanical device) 1360 such as applying brakes, returning the accelerator, and suppressing engine output to perform vehicle control to avoid collision and reduce damage. The alarm device 1340 warns the user by sounding an alarm such as a sound, displaying alarm information on a screen of a car navigation system, or applying vibration to a seat belt or a steering wheel.

[0071] In this embodiment, the photoelectric conversion system 1300 images the surroundings of the vehicle (mobile body 1301), for example, the front or the rear. FIG. 18(b) shows the photoelectric conversion system when imaging the front of the vehicle (imaging range 1350). The vehicle information acquisition device 1320 sends an instruction to the photoelectric conversion system 1300 or the imaging device 1310. With such a configuration, the ranging accuracy can be further improved.

[0072] In the above description, an example of control for preventing collision with other vehicles has been described. However, the photoelectric conversion system 1300 is also applicable to control for automatically driving while following other vehicles, control for automatically driving so as not to deviate from the lane, and the like. Further, the photoelectric conversion system 1300 can be applied not only to vehicles such as automobiles, but also to moving bodies (moving devices) such as ships, aircraft, or industrial robots. This moving body mainly includes a driving force generation unit that generates a driving force used for moving the moving body, and one or both of rotating bodies mainly used for moving the moving body. The driving force generation unit can be an engine, a motor, or the like. The rotating body can be a tire, a wheel, a screw of a ship, a propeller of an aircraft, or the like. In addition, the present invention can be applied not only to moving bodies, but also to devices that widely use object recognition, such as an advanced road traffic system (ITS).

[0073] The photoelectric conversion system according to the fourth embodiment will be described with reference to FIG. 19. FIG. 19 is a block diagram showing a configuration example of a distance image sensor 1401 which is the photoelectric conversion system of the present embodiment.

[0074] As shown in FIG. 19, the distance image sensor 1401 includes an optical system 1407, a photoelectric conversion device 1408, an image processing circuit 1404, a monitor 1405, and a memory 1406. Then, the distance image sensor 1401 can obtain a distance image corresponding to the distance to the subject by projecting light from the light source device 1409 toward the subject and receiving the light (modulated light or pulsed light) reflected by the surface of the subject.

[0075] The optical system 1407 is configured to have one or a plurality of lenses, guide image light (incident light) from the subject to the photoelectric conversion device 1408, and form an image on the light receiving surface (sensor unit) of the photoelectric conversion device 1408.

[0076] As the photoelectric conversion device 1408, the above-described photoelectric conversion device 100 is applied, and a distance signal indicating the distance obtained from the light reception signal output from the photoelectric conversion device 1408 is supplied to the image processing circuit 1404.

[0077] The image processing circuit 1404 performs image processing to construct a distance image based on the distance signal supplied from the photoelectric conversion device 1408. Then, the distance image (image data) obtained by the image processing is supplied to the monitor 1405 for display or supplied to the memory 1406 for storage (recording).

[0078] In the distance image sensor 1401 configured as described above, by applying the photoelectric conversion device 100 described above, along with the improvement in pixel characteristics, for example, a more accurate distance image can be acquired.

[0079] The photoelectric conversion system of the fifth embodiment will be described with reference to FIG. 20. FIG. 20 is a diagram showing an example of the schematic configuration of an endoscopic surgery system 1250 that is the photoelectric conversion system of this embodiment.

[0080] In FIG. 20, a state where a surgeon (doctor) 1231 is performing surgery on a patient 1232 on a patient bed 1233 using the endoscopic surgery system 1250 is illustrated. As shown, the endoscopic surgery system 1250 includes an endoscope 1200, a surgical instrument 1210, and a cart 1234 on which various devices for endoscopic surgery are mounted.

[0081] The endoscope 1200 includes a lens barrel 1201 whose region of a predetermined length from the tip is inserted into the body cavity of the patient 1232, and a camera head 1202 connected to the proximal end of the lens barrel 1201. In the illustrated example, an endoscope 1200 configured as a so-called rigid endoscope having a rigid lens barrel 1201 is shown, but the endoscope 1200 may be configured as a so-called flexible endoscope having a flexible lens barrel.

[0082] At the tip of the lens barrel 1201, an opening into which an objective lens is fitted is provided. A light source device 1203 is connected to the endoscope 1200, and the light generated by the light source device 1203 is guided by a light guide extending inside the lens barrel 1201 to the tip of the lens barrel and irradiated toward an observation target in the body cavity of the patient 1232 through the objective lens. Note that the endoscope 1200 may be a forward-viewing endoscope, or may be an oblique-viewing endoscope or a side-viewing endoscope.

[0083] An optical system and a photoelectric conversion device are provided inside the camera head 1202, and the reflected light (observation light) from the observation target is condensed by the optical system onto the photoelectric conversion device. The observation light is photoelectrically converted by the photoelectric conversion device, and an electrical signal corresponding to the observation light, that is, an image signal corresponding to the observation image, is generated. As the photoelectric conversion device, the photoelectric conversion device 100 (imaging device) described in each of the above embodiments can be used. The image signal is transmitted as RAW data to a camera control unit (CCU) 1235.

[0084] The CCU 1235 is composed of a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), etc., and comprehensively controls the operations of the endoscope 1200 and the display device 1236. Further, the CCU 1235 receives an image signal from the camera head 1202, and performs various image processes for displaying an image based on the image signal, such as development processing (demosaicing processing), on the image signal.

[0085] The display device 1236 displays an image based on the image signal that has been subjected to image processing by the CCU 1235 under the control of the CCU 1235.

[0086] The light source device 1203 is composed of a light source such as an LED (Light Emitting Diode), and supplies irradiation light for photographing a surgical site or the like to the endoscope 1200.

[0087] The input device 1237 is an input interface for the endoscopic surgery system 1250. The user can input various information and give instructions to the endoscopic surgery system 1250 via the input device 1237.

[0088] The treatment instrument control device 1238 controls the driving of the energy treatment instrument 1212 for tissue cauterization, incision, or blood vessel sealing.

[0089] The light source device 1203 that supplies irradiation light when photographing the surgical site with the endoscope 1200 can be composed of, for example, an LED, a laser light source, or a white light source composed of a combination of these. When the white light source is composed of a combination of RGB laser light sources, since the output intensity and output timing of each color (each wavelength) can be controlled with high precision, the white balance of the captured image can be adjusted in the light source device 1203. Also, in this case, the laser light from each of the RGB laser light sources is irradiated to the observation target in a time-division manner, and by controlling the driving of the imaging element of the camera head 1202 in synchronization with the irradiation timing, it is also possible to capture images corresponding to each of RGB in a time-division manner. According to this method, a color image can be obtained without providing a color filter on the imaging element.

[0090] Also, the driving of the light source device 1203 may be controlled so as to change the intensity of the output light every predetermined time. By controlling the driving of the imaging element of the camera head 1202 in synchronization with the timing of the change in the intensity of the light and acquiring images in a time-division manner and synthesizing the images, it is possible to generate a so-called high-dynamic-range image without black crush and white clip.

[0091] In addition, the light source device 1203 may be configured to supply light in a predetermined wavelength band corresponding to special light observation. In special light observation, for example, the wavelength dependence of light absorption in body tissue is utilized. Specifically, by irradiating light with a narrower band than the irradiation light (i.e., white light) during normal observation, a predetermined tissue such as blood vessels in the mucosal surface layer is photographed with high contrast. Alternatively, in special light observation, fluorescence observation may be performed to obtain an image using fluorescence generated by irradiating excitation light. In fluorescence observation, the body tissue is irradiated with excitation light and the fluorescence from the body tissue is observed, or a reagent such as indocyanine green (ICG) is locally injected into the body tissue and the body tissue is irradiated with excitation light corresponding to the fluorescence wavelength of the reagent to obtain a fluorescence image. The light source device 1203 can be configured to supply such narrow-band light and / or excitation light corresponding to special light observation.

[0092] The photoelectric conversion system according to the sixth embodiment will be described with reference to FIGS. 21(a) and 21(b). FIG. 21(a) illustrates glasses 1600 (smart glasses), which are the photoelectric conversion system of the present embodiment. The glasses 1600 include a photoelectric conversion device 1602. The photoelectric conversion device 1602 is the photoelectric conversion device 100 (imaging device) described in each of the above embodiments. Further, a display device including a light emitting device such as an OLED or an LED may be provided on the back side of the lens 1601. The number of photoelectric conversion devices 1602 may be one or more. Also, a plurality of types of photoelectric conversion devices may be combined and used. The arrangement position of the photoelectric conversion device 1602 is not limited to FIG. 21(a).

[0093] The glasses 1600 further include a control device 1603. The control device 1603 functions as a power supply that supplies power to the photoelectric conversion device 1602 and the above display device. In addition, the control device 1603 controls the operations of the photoelectric conversion device 1602 and the display device. An optical system for condensing light onto the photoelectric conversion device 1602 is formed in the lens 1601.

[0094] FIG. 21(b) illustrates glasses 1610 (smart glasses) according to one application example. The glasses 1610 have a control device 1612, and a photoelectric conversion device corresponding to the photoelectric conversion device 1602 and a display device are mounted on the control device 1612. An optical system for projecting light emission from the photoelectric conversion device and the display device is formed in the lens 1611, and an image is projected onto the lens 1611. The control device 1612 functions as a power source for supplying power to the photoelectric conversion device and the display device, and controls the operations of the photoelectric conversion device and the display device. The control device may have a line-of-sight detection unit that detects the wearer's line of sight. Infrared rays may be used for the detection of the line of sight. The infrared light emitting unit emits infrared light to the eyeball of the user who is gazing at the display image. An imaging image of the eyeball is obtained by detecting the reflected light of the emitted infrared light from the eyeball by an imaging unit having a light receiving element. By having a reducing means for reducing the light from the infrared light emitting unit to the display unit in a plan view, a reduction in image quality is reduced.

[0095] The user's line of sight with respect to the display image is detected from the imaging image of the eyeball obtained by imaging the infrared light. Any known method can be applied to the line-of-sight detection using the imaging image of the eyeball. As an example, a line-of-sight detection method based on a Purkinje image by reflection of irradiation light on the cornea can be used.

[0096] More specifically, a line-of-sight detection process based on the pupil corneal reflection method is performed. Using the pupil corneal reflection method, a line-of-sight vector representing the orientation (rotation angle) of the eyeball is calculated based on the image of the pupil and the Purkinje image included in the imaging image of the eyeball, whereby the user's line of sight is detected.

[0097] The display device of the present embodiment has a photoelectric conversion device having a light receiving element, and may control the display image of the display device based on the user's line-of-sight information from the photoelectric conversion device.

[0098] Specifically, the display device determines, based on the line-of-sight information, a first viewing area that the user gazes at and a second viewing area other than the first viewing area. The first viewing area and the second viewing area may be determined by the control device of the display device, or the display device may receive those determined by an external control device. In the display area of the display device, the display resolution of the first viewing area may be controlled to be higher than that of the second viewing area. That is, the resolution of the second viewing area may be made lower than that of the first viewing area.

[0099] Further, the display area has a first display area and a second display area different from the first display area, and based on the line-of-sight information, an area with a higher priority may be determined from the first display area and the second display area. The first viewing area and the second viewing area may be determined by the control device of the display device, or the display device may receive those determined by an external control device. The resolution of the area with a higher priority may be controlled to be higher than that of the area other than the area with a higher priority. That is, the resolution of the area with a relatively lower priority may be made lower.

[0100] Note that AI may be used to determine the first viewing area or the area with a higher priority. AI may be a model configured to estimate the angle of the line of sight and the distance to the target at the tip of the line of sight from an image of the eyeball, using the image of the eyeball and the direction in which the eyeball in the image is actually looking as teacher data. The AI program may be possessed by the display device, the photoelectric conversion device, or an external device. When it is possessed by an external device, it is transmitted to the display device via communication.

[0101] When performing display control based on visual recognition detection, it is preferably applicable to smart glasses further having a photoelectric conversion device that images the outside. The smart glasses can display the captured external information in real time.

[0102] The seventh embodiment will be described with reference to FIGS. 22(a) and 22(b). The above-described photoelectric conversion device and photoelectric conversion system may be applied to electronic devices such as so-called smartphones and tablets, for example.

[0103] Figs. 22(a) and 22(b) are diagrams showing an example of an electronic device 1500 equipped with a photoelectric conversion device. Fig. 22(a) shows the front side of the electronic device 1500, and Fig. 22(b) shows the back side of the electronic device 1500.

[0104] As shown in Fig. 22(a), a display 1510 for displaying an image is arranged at the center of the surface of the electronic device 1500. Along the upper side of the surface of the electronic device 1500, a front camera 1521, 1522 using the above photoelectric conversion device 100, an IR light source 1530 that emits infrared light, and a visible light source 1540 that emits visible light are arranged.

[0105] Also, as shown in Fig. 22(b), along the upper side of the back of the electronic device 1500, a rear camera 1551, 1552 using the above photoelectric conversion device 100, an IR light source 1560 that emits infrared light, and a visible light source 1570 that emits visible light are arranged.

[0106] In the electronic device 1500 configured as described above, by applying the above-described photoelectric conversion device 100, for example, a higher-quality image can be captured. Note that the photoelectric conversion device can also be applied to other electronic devices such as an infrared sensor, a distance measurement sensor using an active infrared light source, a security camera, and a personal or biometric authentication camera. Thereby, improvements in the accuracy and performance of these electronic devices can be achieved.

[0107] Fig. 23 is a block diagram of an X-ray CT apparatus according to the eighth embodiment. The above-described photoelectric conversion device 100 can be applied to a detector of an X-ray CT apparatus. The X-ray CT apparatus 30 in the present embodiment includes an X-ray generation unit 310, a wedge 316, a collimator 318, an X-ray detection unit 320, a top plate 330, a rotating frame 340, and a high voltage generation device 350. The X-ray CT apparatus 30 also includes a data acquisition device (DAS: Data Acquisition System) 351, a signal processing unit 352, a display unit 353, and a control unit 354.

[0108] The X-ray generation unit 310 is composed of, for example, a vacuum tube that generates X-rays. A high voltage and a filament current from the high voltage generator 350 are supplied to the vacuum tube of the X-ray generation unit 310. X-rays are generated by irradiating thermoelectrons from the cathode (filament) toward the anode (target).

[0109] The wedge 316 is a filter that adjusts the X-ray dose irradiated from the X-ray generation unit 310. The wedge 316 attenuates the X-ray dose so that the X-rays irradiated from the X-ray generation unit 310 to the subject have a predetermined distribution. The collimator 318 is composed of a lead plate or the like that narrows down the irradiation range of the X-rays transmitted through the wedge 316. The X-rays generated by the X-ray generation unit 310 are shaped into a cone beam shape through the collimator 318 and irradiated onto the subject on the top plate 330.

[0110] The X-ray detection unit 320 is configured using the photoelectric conversion device 100 described above. The X-ray detection unit 320 detects the X-rays that have passed through the subject from the X-ray generation unit 310 and outputs a signal corresponding to the X-ray dose to the DAS 351.

[0111] The rotating frame 340 is annular and is configured to be rotatable. Inside the rotating frame 340, the X-ray generation unit 310 (wedge 316, collimator 318) and the X-ray detection unit 320 are arranged to face each other. The X-ray generation unit 310 and the X-ray detection unit 320 are rotatable together with the rotating frame 340.

[0112] The high voltage generator 350 includes a booster circuit and outputs a high voltage to the X-ray generation unit 310. The DAS 351 includes an amplifier circuit and an A / D conversion circuit, and outputs the signal from the X-ray detection unit 320 to the signal processing unit 352 as digital data.

[0113] The signal processing unit 352 includes a CPU (Central Processing Unit), a ROM (Read Only Memory), and a RAM (Random Access Memory), and is capable of executing image processing and the like on digital data. The display unit 353 includes a flat panel display device and the like, and is capable of displaying X-ray images. The control unit 354 includes a CPU, a ROM, a RAM, and the like, and controls the operation of the entire X-ray CT apparatus 30.

[0114] As described above, the embodiments described can be appropriately modified without departing from the technical idea. Note that the disclosure of this specification includes not only what is described in this specification, but also all matters that can be grasped from this specification and the drawings attached to this specification. Further, the disclosure of this specification includes the complementary set of the concepts described in this specification. That is, for example, if this specification describes that "A is larger than B", even if the description that "A is not larger than B" is omitted, it can be said that this specification discloses that "A is not larger than B". This is because when the description that "A is larger than B" is given, it is premised that the case where "A is not larger than B" is considered.

[0115] The disclosure of this specification includes the following configurations. (Item 1) A semiconductor device having a structure in which a plurality of semiconductor layers including a first semiconductor layer and a second semiconductor layer and an insulating structure for insulating the plurality of semiconductor layers from each other are stacked, and the insulating structure includes a first insulating layer disposed between the first semiconductor layer and the second semiconductor layer, a conductive through-via penetrating the second semiconductor layer, a wiring pattern disposed in the first insulating layer, a conductive connecting member disposed in the first insulating layer so as to electrically connect the through-via and the wiring pattern, and characterized by comprising the above. (Item 2) The insulating structure includes a second insulating layer, and the second semiconductor layer is disposed between the first insulating layer and the second insulating layer. The semiconductor device according to item 1, characterized in that... (Item 3) The plurality of semiconductor layers further includes a third semiconductor layer, and the second insulating layer is disposed between the second semiconductor layer and the third semiconductor layer. The semiconductor device according to item 2, characterized in that... (Item 4) The connection member contains tungsten, and the wiring pattern contains copper. The semiconductor device according to any one of items 1 to 3, characterized in that... (Item 5) The connection member includes a conductive pattern disposed to be in electrical contact with the through-via, and a plug that electrically connects the conductive pattern and the wiring pattern. The semiconductor device according to any one of items 1 to 4, characterized in that... (Item 6) At the connection portion between the through-via and the connection member, the width of the connection member is larger than the width of the through-via. The semiconductor device according to any one of items 1 to 5, characterized in that... (Item 7) At the connection portion between the through-via and the connection member, the width of the through-via is larger than the width of the connection member. The semiconductor device according to any one of items 1 to 5, characterized in that... (Item 8) At the connection portion between the connection member and the wiring pattern, the width of the wiring pattern is larger than the width of the connection member. The semiconductor device according to item 6, characterized in that... (Item 9) At the connection portion between the connection member and the wiring pattern, the width of the connection member is larger than the width of the wiring pattern. The semiconductor device according to item 6, characterized in that... (Item 10) The insulating structure includes a first film having a first opening, and a second film disposed so as to overlap the first film and having a second opening. The through via includes a portion disposed in the first opening, and the connection member is disposed in the second opening. The semiconductor device according to any one of Items 1 to 9, characterized in that. (Item 11) The through via is disposed so as to penetrate an insulator disposed in a through hole of the second semiconductor layer. The semiconductor device according to any one of Items 1 to 10, characterized in that. (Item 12) A second through via penetrating the insulator; A conductive second connection member disposed in the insulating structure so as to electrically connect the second through via and the wiring pattern; The semiconductor device according to Item 11, further comprising: (Item 13) The semiconductor device further includes a second through via penetrating the insulator, The connection member is disposed so as to electrically connect the second through via and the wiring pattern. The semiconductor device according to Item 11, characterized in that. (Item 14) The through via has a tapered shape whose width decreases toward the connection member. The semiconductor device according to any one of Items 1 to 12, characterized in that. (Item 15) The connection member has a tapered shape whose width decreases toward the through via. The semiconductor device according to any one of Items 1 to 12, characterized in that. (Item 16) The through via has a tapered shape whose width decreases toward the connection member, The connection member has a tapered shape whose width decreases toward the through via. The semiconductor device according to any one of Items 1 to 12, characterized in that. (Item 17) The thickness of the second semiconductor layer is thinner than the thickness of the semiconductor layers excluding the second semiconductor layer among the plurality of semiconductor layers. The semiconductor device according to any one of Items 1 to 16, characterized in that... (Item 18) The second insulating layer includes a metal bonding surface. The semiconductor device according to Item 3, characterized in that... (Item 19) A semiconductor device having a structure in which a plurality of semiconductor layers including a first semiconductor layer and a second semiconductor layer, and an insulating structure for insulating the plurality of semiconductor layers from each other are laminated, A conductive through-via penetrating the second semiconductor layer, A wiring pattern disposed in the insulating structure, And a conductive connection member disposed in the insulating structure so as to electrically connect the through-via and the wiring pattern. The through-via has a tapered shape in which the width becomes smaller toward the connection member. The connection member has a tapered shape in which the width becomes smaller toward the through-via. The semiconductor device is characterized in that... (Item 20) A photoelectric conversion element is disposed in the first semiconductor layer. The semiconductor device according to any one of Items 1 to 19, characterized in that... (Item 21) A step of preparing a first substrate including a first semiconductor layer, A step of preparing a second substrate including a second semiconductor layer and an insulating layer, in which a conductive connection member and a wiring pattern electrically connected to the connection member are disposed in the insulating layer, A step of forming a through-via penetrating the second semiconductor layer and reaching the connection member in the second semiconductor layer, A step of bonding the insulating layer of the first substrate and the second substrate before or after forming the through-via, A method for manufacturing a semiconductor device, characterized by including... (Item 22) The semiconductor device according to Item 20, And a signal processing unit that processes a signal output from the semiconductor device. A photoelectric conversion system characterized by comprising (Item 23) A moving body comprising the semiconductor device according to Item 20, characterized by having a control unit that controls the movement of the moving body using a signal output from the semiconductor device.

[0116] The invention is not limited to the above embodiments, and various changes and modifications are possible without departing from the spirit and scope of the invention. Therefore, claims are attached to disclose the scope of the invention.

Explanation of Reference Signs

[0117] 100: Photoelectric conversion device (semiconductor device), SL1: First semiconductor layer, SL2: Second semiconductor layer, IST: Insulation structure, IL1: First insulating layer, IL2: Second insulating layer, 215: Connection member, 217: Wiring pattern, 219: Through via

Claims

1. A semiconductor device having a structure in which a plurality of semiconductor layers including a first semiconductor layer and a second semiconductor layer are stacked, and an insulating structure for insulating the plurality of semiconductor layers from each other, the insulating structure including a first insulating layer disposed between the first semiconductor layer and the second semiconductor layer, comprising: a conductive through-via penetrating the second semiconductor layer; a wiring pattern disposed in the first insulating layer; a conductive connecting member disposed in the first insulating layer so as to electrically connect the through-via and the wiring pattern; A semiconductor device characterized by comprising the above.

2. The insulating structure includes a second insulating layer, and the second semiconductor layer is disposed between the first insulating layer and the second insulating layer, The semiconductor device according to claim 1, characterized by the above.

3. The plurality of semiconductor layers further includes a third semiconductor layer, and the second insulating layer is disposed between the second semiconductor layer and the third semiconductor layer, The semiconductor device according to claim 2, characterized by the above.

4. The connecting member includes tungsten, and the wiring pattern includes copper, The semiconductor device according to claim 1, characterized by the above.

5. The connecting member includes a conductive pattern disposed so as to be in electrical contact with the through-via, and a plug for electrically connecting the conductive pattern and the wiring pattern, The semiconductor device according to claim 1, characterized by the above.

6. At the connection portion between the through-via and the connecting member, the width of the connecting member is larger than the width of the through-via, The semiconductor device according to claim 1, characterized by the above.

7. At the connection portion between the through via and the connection member, the width of the through via is larger than the width of the connection member. The semiconductor device according to claim 1, characterized in that.

8. At the connection portion between the connection member and the wiring pattern, the width of the wiring pattern is larger than the width of the connection member. The semiconductor device according to claim 6, characterized in that.

9. At the connection portion between the connection member and the wiring pattern, the width of the connection member is larger than the width of the wiring pattern. The semiconductor device according to claim 6, characterized in that.

10. The insulating structure includes a first film having a first opening and a second film disposed so as to overlap the first film and having a second opening. The through via includes a portion disposed in the first opening, and the connection member is disposed in the second opening. The semiconductor device according to claim 1, characterized in that.

11. The through via is disposed so as to penetrate an insulator disposed in a through hole of the second semiconductor layer. The semiconductor device according to claim 1, characterized in that.

12. A second through via penetrating the insulator, A conductive second connection member disposed in the insulating structure so as to electrically connect the second through via and the wiring pattern. The semiconductor device according to claim 11, further comprising.

13. Further comprising a second through via penetrating the insulator, The connection member is disposed so as to electrically connect the second through via and the wiring pattern. The semiconductor device according to claim 11, characterized in that.

14. The through via has a tapered shape that becomes narrower toward the connection member. The semiconductor device according to claim 1, characterized in that.

15. The connection member has a tapered shape that becomes narrower toward the through via. The semiconductor device according to claim 1, characterized in that.

16. The through via has a tapered shape that becomes narrower toward the connection member, The connection member has a tapered shape that becomes narrower toward the through via, The semiconductor device according to claim 1, characterized in that.

17. The thickness of the second semiconductor layer is thinner than the thickness of the semiconductor layers excluding the second semiconductor layer among the plurality of semiconductor layers. The semiconductor device according to claim 1, characterized in that.

18. The second insulating layer includes a metal bonding surface. The semiconductor device according to claim 3, characterized in that.

19. A semiconductor device having a structure in which a plurality of semiconductor layers including a first semiconductor layer and a second semiconductor layer and an insulating structure for insulating the plurality of semiconductor layers from each other are stacked, A conductive through via penetrating the second semiconductor layer, A wiring pattern disposed in the insulating structure, A conductive connection member disposed in the insulating structure so as to electrically connect the through via and the wiring pattern, and The through via has a tapered shape that becomes narrower toward the connection member, The connection member has a tapered shape that becomes narrower toward the through via, The semiconductor device, characterized in that.

20. A photoelectric conversion element is disposed in the first semiconductor layer. The semiconductor device according to any one of claims 1 to 19, characterized in that...

21. A step of preparing a first substrate including a first semiconductor layer; A step of preparing a second substrate including a second semiconductor layer and an insulating layer, in which a conductive connection member and a wiring pattern electrically connected to the connection member are disposed in the insulating layer; A step of forming a through-via reaching the connection member through the second semiconductor layer in the second semiconductor layer; A step of bonding the insulating layer of the first substrate and the second substrate before or after the formation of the through-via; A method for manufacturing a semiconductor device, characterized by including the above steps.

22. The semiconductor device according to claim 20; A signal processing unit that processes a signal output by the semiconductor device; An optoelectronic conversion system, characterized by including the above components.

23. A moving body including the semiconductor device according to claim 20, characterized by having a control unit that controls the movement of the moving body using a signal output by the semiconductor device.

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