Ion implantation device

Abstract

This invention provides a technology that allows for a simpler configuration of at least some of the multiple resonators installed in an ion implantation device. [Solution] The ion implantation apparatus is an ion implantation apparatus comprising a linear acceleration unit for adjusting the energy of ions, the linear acceleration unit comprising a plurality of resonators, each configured to accelerate or decelerate ions by generating a high-frequency electric field, and comprising an electrode for generating the high-frequency electric field, a coil, a stem connecting the electrode and the coil, and a housing surrounding the coil, and at least one of the plurality of resonators is configured to have a gas inside the housing for cooling at least the coil, and to generate a flow of gas near the coil that promotes the cooling of at least the coil.

Claims

1. An ion implantation apparatus equipped with a linear accelerator for adjusting the energy of ions, The linear acceleration unit includes a plurality of resonators, Each of the aforementioned plurality of resonators is The system is configured to accelerate or decelerate the ions by generating a high-frequency electric field, and includes electrodes for generating the high-frequency electric field, Coil and, A stem connecting the electrode and the coil, The housing surrounding the coil, At least one of the plurality of resonators is configured to have a gas inside the housing that cools at least the coil, and to have a configuration that generates a flow of the gas near the coil that promotes the cooling of the coil. Ion implantation device.

2. The configuration for generating the aforementioned gas flow is, The ion implantation apparatus according to claim 1, wherein the gas is introduced into the interior of the housing from the outside of the housing and the gas is released from the interior of the housing to the outside of the housing, thereby generating the flow of the gas inside the housing.

3. The configuration for generating the aforementioned gas flow is, The housing includes a plurality of openings, The ion implantation apparatus according to claim 2, wherein the plurality of openings include a first opening and a second opening located vertically above the first opening in the operating state.

4. The configuration for generating the aforementioned gas flow is, A first airflow generating mechanism is provided in the first opening and promotes the generation of the gas flow, which flows from the first opening into the interior of the housing and out of the second opening to the exterior of the housing. A second airflow generating mechanism is provided in the second opening, which facilitates the generation of the gas flow that flows in from the first opening into the interior of the housing and out from the second opening to the exterior of the housing, The ion implantation apparatus according to claim 3, comprising at least one of the following:

5. The housing includes a lid, a bottom, and a wall connecting the lid and the bottom. The ion implantation apparatus according to claim 3, wherein the first opening is provided in the bottom portion, and the second opening is provided in the wall portion and / or the lid portion.

6. The housing includes a lid, a bottom, and a wall connecting the lid and the bottom. The ion implantation apparatus according to claim 3, wherein the first opening is provided in the wall portion and the second opening is provided in the lid portion.

7. The housing includes a lid, a bottom, and a wall connecting the lid and the bottom. The ion implantation apparatus according to claim 3, wherein the first opening and the second opening are provided in the wall portion.

8. The housing has a cylindrical shape including a lid, a bottom, and a wall connecting the lid and the bottom. The ion implantation apparatus according to claim 3, wherein the plurality of openings are arranged in the axial and circumferential directions of the cylindrical shape, and adjacent openings in the circumferential direction are offset from each other in the axial direction, or adjacent openings in the axial direction are offset from each other in the circumferential direction.

9. The housing has a cylindrical shape including a lid, a bottom, and a wall connecting the lid and the bottom. The ion implantation apparatus according to claim 3, wherein the plurality of openings have an elongated shape that extends parallel to the axial direction of the cylindrical shape.

10. The ion implantation apparatus according to claim 9, wherein the plurality of openings are configured to be shieldable so as to suppress the emission of electromagnetic waves radiated from the coil to the outside of the housing.

11. The aforementioned plurality of openings are rectangular in shape, having a long side and a short side. When the wavelength of the electromagnetic wave radiated from the coil is denoted as λ, The area of ​​each of the aforementioned multiple openings is (λ / 10000) 2 or more (λ / 100) 2 The following: The length of the aforementioned longer side is between λ / 10000 and λ / 100, The length of the shorter side is between λ / 10000 and λ / 100, The ratio of the length of the shorter side to the length of the longer side is between 1 / 1000 and 1 / 2. The ion implantation apparatus according to claim 10.

12. The aforementioned plurality of openings are rectangular in shape, having a long side and a short side. The area of ​​the aforementioned multiple openings is 0.2 mm². 2 40,000 mm 2 The following: The length of the aforementioned long side is 0.5 mm or more and 200 mm or less. The length of the shorter side is 0.5 mm or more and 200 mm or less. The ion implantation apparatus according to claim 10.

13. The ion implantation apparatus according to claim 1, wherein the interior of the housing is provided with a heat dissipation section that promotes heat release to the gas by increasing the surface area exposed to the gas.

14. The ion implantation apparatus according to claim 13, wherein an air cooler is provided outside the housing, configured to blow cool air onto the heat dissipation section to cool the heat dissipation section.

15. The ion implantation apparatus according to claim 13, wherein a stem head is attached to the connection portion of the stem to the coil, and the heat dissipation portion includes a heat sink provided on the stem head.

16. The ion implantation apparatus according to claim 13, wherein the heat dissipation section includes fins.

17. The ion implantation apparatus according to claim 1, wherein the electrode comprises graphite.

18. The ion implantation apparatus according to claim 1, wherein the gas comprises at least one of hydrogen, helium, and air.

19. The ion implantation apparatus according to claim 4, wherein the gas flowing out of the second opening to the outside of the housing is at a higher temperature than the gas flowing in into the inside of the housing through the first opening.

20. The configuration for generating the aforementioned gas flow is, The enclosure includes a plurality of openings and at least one fan, The plurality of openings include a third opening and a fourth opening, The aforementioned at least one fan, A third fan is provided in the third opening to facilitate the generation of the gas flow, which flows from the third opening into the interior of the housing and out of the fourth opening to the exterior of the housing. A fourth fan is provided in the fourth opening to facilitate the generation of the gas flow, which flows from the third opening into the interior of the housing and out of the fourth opening to the exterior of the housing. The ion implantation apparatus according to claim 2, comprising at least one of the following:

21. The configuration for generating the aforementioned gas flow is, The ion implantation apparatus according to claim 1, configured to circulate the gas inside the housing by generating convection of the gas inside the housing.

22. The ion implantation apparatus according to claim 21, wherein an internal circulation fan is provided inside the housing for circulating the gas inside the housing.

23. The housing has a lid, a bottom, and a wall connecting the lid and the bottom. The lid portion is provided with a piping portion that protrudes away from the wall portion, The piping section is connected to the lid section by a first connection section through which the gas flows from the housing to the piping section, and a second connection section through which the gas flows from the piping section to the housing. The ion implantation apparatus according to claim 22, wherein the internal circulation fan is provided inside the piping section and is configured to form an internal circulation path through which the gas flows into the piping section from the first connection section and flows out from the second connection section.

24. The aforementioned piping section includes multiple piping structures, The ion implantation apparatus according to claim 23, wherein the internal circulation fan is configured to form the internal circulation path in each of the plurality of piping structures.

25. The ion implantation apparatus according to claim 1, wherein a flow straightening plate for controlling the direction of the gas flow is provided inside the housing.

26. In the direction of the ion beam's propagation, a first ground electrode is provided upstream of the electrode. In the direction of propagation of the ion beam, a second ground electrode is provided downstream of the electrode. The ion implantation apparatus according to claim 1, wherein at least one of the distance between the electrode and the first ground electrode and the distance between the electrode and the second ground electrode is configured to be changeable.

27. The ion implantation apparatus according to claim 1, wherein the resonant frequency of the resonant state of the high-frequency electric field is 13.56 MHz.

28. The ion implantation apparatus according to claim 1, wherein the output power supplied to the resonator is 1W or more and 3kW or less, and the output voltage applied to the electrode is 1kV or more and 45kV or less.

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