Semiconductor substrate processing base, ceramic base material, and manufacturing method

Abstract

The present invention provides a semiconductor substrate processing base and a ceramic base material, which can adjust the ion sheath at the outer periphery of the substrate, suppress the occurrence of localized non-uniformity of the ion sheath and hot spots, and suppress peeling and warping, and a method for manufacturing the same. [Solution] A semiconductor substrate processing base 100 includes a ceramic base 110 consisting of a disk-shaped member 111 and an annular member 115, a conductive film 120 formed on a side surface 112 of the disk-shaped member, a power supply member 130 formed on the annular member 115, a ceramic insulating member 140 consisting of a disk-shaped insulating member 141 and an annular insulating member 145, a first plasma generating unit 150 provided on one main surface 113 of the disk-shaped member and electrically connected to the conductive film 120, and a second plasma generating unit 160 provided on one main surface 117 of the annular member or inside the annular insulating member 145 and electrically connected to the power supply member 130.

Description

[Technical field]

[0001] The present invention relates to a semiconductor substrate processing base, a ceramic base material used therein, and a manufacturing method thereof. [Background technology]

[0002] In semiconductor processing, especially in plasma processing using high frequency power, a semiconductor substrate processing base in which a ceramic base is placed on an Al base has been used. The ceramic base may have an electrode built in, and in that case, a power supply terminal to the electrode is generally provided on the ceramic base.

[0003] When a substrate (wafer) is placed on such a base and a plasma process is performed, the ion sheath becomes non-uniform around the outer periphery of the substrate. For this reason, a circular focus ring has been placed concentrically around the outer edge of the substrate to suppress the non-uniformity of the ion sheath.

[0004] Patent document 1 discloses a plasma processing apparatus, a plasma processing method, and a plasma processing program in which a second mounting table has a coil provided inside along a mounting surface on which a focus ring is placed, a third RF power supply applies a high-frequency voltage to the coil, and a power supply control unit controls the third RF power supply so that the power of the high-frequency voltage applied to the coil is increased in accordance with the degree of wear of the focus ring.

[0005] Patent Document 2 discloses an electrostatic chuck in which an RF voltage is applied to an internal electrode, and the structure of the electrostatic chuck is intended to provide an electrostatic chuck in which the effect of an electrode temperature rise due to an RF current is small, thereby improving the film formation rate distribution when an insulating film is formed on a wafer. The electrostatic chuck discloses that the RF voltage supply point on the electrode is located outside the contact surface of the object to be attracted to reduce the effect of the electrode temperature, or that the supply points are provided at two or more points to reduce the RF current per supply point, and, to achieve these things more easily, that the electrode has a two-layer structure, one for introducing RF current and one for attracting, and the two are connected by a conductor with the conductor position serving as the RF voltage supply point for the attracting electrode. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] JP 2018-206989 A [Patent Document 2] Japanese Patent Application Publication No. 6-77309 Summary of the Invention [Problem to be solved by the invention]

[0007] Recently, plasma processes have become more heat-intensive, and large amounts of power have been input to the base. As a result, high-frequency currents are concentrated at the power supply terminals on the ceramic substrate, causing localized non-uniformity in the temperature and ion sheath near the power supply terminals. At the same time, the difference in CTE between the Al substrate and the ceramic substrate has caused peeling between the substrate and the ceramic substrate, and the substrate has become too warped, causing problems in the process.

[0008] Therefore, there has been a demand for a base that simultaneously satisfies the following requirements: (1) The ion sheath in the focus ring area can be adjusted relative to the ion sheath in the substrate area, (2) The power supply terminal for high frequency current is not used, and (3) The structure is stable against the large heat input of the process.

[0009] The present invention has been made in consideration of the above circumstances, and aims to provide a semiconductor substrate processing base, a ceramic substrate, and a manufacturing method thereof that can adjust the ion sheath at the outer periphery of the substrate, suppress the occurrence of localized ion sheath non-uniformity and hot spots caused by conventional power supply terminals, and suppress peeling and warping of the ceramic insulating member from the ceramic substrate, thereby providing a stable structure. [Means for solving the problem]

[0010] (1) In order to achieve the above object, the present invention provides the following means: That is, a semiconductor substrate processing base according to an application example of the present invention is a semiconductor substrate processing base, comprising: a ceramic base material including a disk-shaped member and an annular member arranged on the outside of the disk-shaped member, a conductive film formed on a side surface of the disk-shaped member, a power supply member formed on the annular member, a ceramic insulating member including a disk-shaped insulating member formed on one main surface of the disk-shaped member and an annular insulating member formed on one main surface of the annular member, a first plasma generating unit provided on one main surface side of the disk-shaped member and electrically connected to the conductive film, and a second plasma generating unit provided on one main surface side of the annular member or inside the annular insulating member and electrically connected to the power supply member. The ceramic insulating member is formed of a ceramic sintered body, and the ceramic insulating member is bonded to the ceramic base material with an organic adhesive, and the thickness of the organic adhesive layer is 100 μm or less. It is characterized by the fact that

[0011] In this way, by disposing the annular focus ring on the annular member, high frequency power can be applied independently to the disk-shaped insulating member and the annular insulating member, and the ion sheath in the focus ring region (region directly above the ring) can be adjusted. In addition, the disk-shaped member disperses the high frequency current used in the plasma process, suppressing the occurrence of localized non-uniformity in the ion sheath and hot spots caused by conventional power supply terminals. In addition, because both the substrate and the insulating member are made of ceramics, peeling or warping of the ceramic insulating member from the ceramic substrate is suppressed, resulting in a stable structure.

[0012] (2) In the semiconductor substrate processing base of the application example of (1) above, the ceramic base is formed of ceramics having a thermal conductivity of 70 W / mK or more. As a result, the ceramic base itself has high thermal conductivity, making it suitable for use as a ceramic base for cooling.

[0013] (3) In addition, in the semiconductor substrate processing base of the application example of (1) or (2) above, the ceramic base is characterized in that it is formed of ceramics containing SiC. This makes it possible to use an aqueous medium that was previously avoided due to the risk of corrosion of the coolant flow path of the conventional Al base. In addition, the thermal conductivity of SiC itself is high, making it suitable for use as a ceramic base for cooling. In addition, since SiC itself is conductive, it can also serve as an electrode for high-frequency current.

[0014] (4) In the semiconductor substrate processing base according to any one of the application examples (1) to (3) above, the ceramic insulating member is formed of a ceramic sintered body or a ceramic sprayed film. This allows a dense ceramic insulating member to be formed that has electrical insulation properties. In addition, electrodes can be easily formed inside the ceramic insulating member.

[0015] (5) In the semiconductor substrate processing base according to any one of the application examples (1) to (4) above, the ceramic insulating member is formed of a ceramic sintered body, and the ceramic insulating member is bonded to the ceramic base material with an organic adhesive, and the thickness of the organic adhesive layer is 100 μm or less. This allows the thickness of the adhesive layer to be thin, and allows a large amount of heat to be transferred.

[0016] (6) In the semiconductor substrate processing base according to any one of the above (1) to (5), the ceramic insulating member is made of AlN or Al 2 O 3 This reduces the difference in CTE between the ceramic base material and the ceramic insulating member, which further suppresses peeling or warping of the ceramic insulating member from the ceramic base material when a large amount of heat is input from the process, resulting in a more stable structure.

[0017] (7) In the semiconductor substrate processing base according to any one of the application examples of (1) to (6) above, the disk-shaped insulating member is an electrostatic chuck having an electrostatic attraction electrode embedded therein. By using the disk-shaped insulating member as an electrostatic chuck in this way, the substrate can be more firmly attracted to the substrate mounting surface, and the heat input to the substrate can be more efficiently transferred to the ceramic base.

[0018] (8) In the semiconductor substrate processing base according to any one of the application examples of (1) to (7) above, the conductive film is an Al film having a purity of 99.8% or more, which reduces the impedance of the conductive film with respect to high frequency current and is effective in high power processes that pass a large amount of heat through the semiconductor process.

[0019] (9) In the semiconductor substrate processing base according to any one of the application examples (1) to (8) above, the ceramic base is made of conductive ceramics, the first plasma generating part is one main surface of the disk-shaped member, and the second plasma generating part is one main surface of the annular member. This eliminates the need to form a high-frequency electrode on the semiconductor substrate processing base, thereby reducing manufacturing costs.

[0020] (10) In the semiconductor substrate processing base according to any one of the application examples of (1) to (9) above, the first plasma generating portion is a second conductive film formed on one main surface of the disk-shaped member, and the second plasma generating portion is a third conductive film formed on one main surface of the annular member. This allows a high voltage to be applied to the plasma generating portion, and the semiconductor substrate processing base can be used for high-power processes.

[0021] (11) In the semiconductor substrate processing base according to any one of the application examples of (1) to (10) above, the power supply member is a fourth conductive film formed on an inner or outer side surface of the annular member. This makes it possible to avoid current concentration even on the annular member, and further suppress the occurrence of localized non-uniformity of the ion sheath and hot spots.

[0022] (12) In addition, the semiconductor substrate processing base according to any one of the application examples of (1) to (11) above is characterized in that it further comprises a support stand for supporting the ceramic substrate, and the disk-shaped member and the annular member are concentrically arranged on the support stand. This makes it easier to independently control the high-frequency currents to the disk-shaped member and the annular member. In addition, the heat input to the ceramic substrate is insulated by the support stand, so that the surface temperature of the ceramic substrate is smoothed.

[0023] (13) In addition, the ceramic substrate of the application example of the present invention includes a disk-shaped member having an Al film formed on a side surface thereof and a ceramic substrate disposed on the outside of the disk-shaped member. , the power supply member is formed and a circular member, the disk-shaped member and the circular member being made of ceramics having a thermal conductivity of 70 W / mK or more. The power supply member is a fourth conductive film formed on the inner or outer side surface of the annular member. It is characterized by the fact that

[0024] Such a ceramic base material can be suitably used as a semiconductor substrate processing base in a high-power process.

[0025] (14) In addition, a method for manufacturing a semiconductor substrate processing base according to an embodiment of the present invention includes the steps of: preparing a ceramic base material including a disk-shaped member and an annular member made of a ceramic containing SiC; and forming a ceramic substrate by etching at least a part of a side surface of the disk-shaped member. and the inner or outer side of the disk-shaped member. and forming an Al film on the substrate by a cold spray method.

[0026] This makes it possible to manufacture a semiconductor substrate processing base suitable for use in high power processes.

[0027] (15) In addition, the manufacturing method of the application example of (14) above is characterized by further including the steps of forming a disk-shaped insulating member on one main surface of the disk-shaped member and forming an annular insulating member on one main surface of the annular member, thereby manufacturing a semiconductor substrate processing base suitable for high power processes. Effect of the Invention

[0028] According to the semiconductor substrate processing base or ceramic base of the present invention, it is possible to adjust the ion sheath at the outer periphery of the substrate, and to suppress the occurrence of localized non-uniformity of the ion sheath and hot spots caused by the conventional power supply terminal. Also, peeling or warping of the ceramic insulating member from the ceramic base is suppressed, and a stable structure can be achieved. Moreover, the manufacturing method of the present invention can manufacture such a semiconductor substrate processing base. [Brief description of the drawings]

[0029] [Figure 1] 1 is a schematic cross-sectional view showing an example of a semiconductor substrate processing base according to a first embodiment of the present invention. [Diagram 2] 5 is a schematic cross-sectional view showing an example of a semiconductor substrate processing base according to a second embodiment of the present invention. FIG. [Diagram 3] 11 is a schematic cross-sectional view showing an example of a semiconductor substrate processing base according to a third embodiment of the present invention. FIG. [Figure 4] 1 is a schematic cross-sectional view showing a reduced pressure vessel and a semiconductor substrate processing base installed therein; [Diagram 5] 4 is a flowchart showing an example of a method for manufacturing a semiconductor substrate processing base according to an embodiment of the present invention. [Figure 6] 4 is a flowchart showing an example of a method for manufacturing a semiconductor substrate processing base according to an embodiment of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0030] Next, an embodiment of the present invention will be described with reference to the drawings. In order to facilitate understanding of the description, the same reference numerals are used for the same components in each drawing, and duplicated descriptions will be omitted. In the configuration diagrams, the size of each component is conceptually shown, and does not necessarily represent the actual dimensional ratio.

[0031] [First embodiment] (Configuration of semiconductor substrate processing base) A semiconductor substrate processing base according to a first embodiment of the present invention will be described with reference to Fig. 1. Fig. 1 is a schematic cross-sectional view showing an example of a semiconductor substrate processing base according to a first embodiment of the present invention. The semiconductor substrate processing base 100 according to the first embodiment of the present invention includes a ceramic base 110, a conductive film 120, a power supply member 130, a ceramic insulating member 140, a first plasma generating unit 150, and a second plasma generating unit 160.

[0032] Ceramic base material 110 is composed of disk-shaped member 111 and annular member 115 arranged on the outside of disk-shaped member 111. By placing an annular focus ring on annular member 115, high-frequency power can be applied independently to first plasma generation section 150 and second plasma generation section 160, and the ion sheath in the focus ring region (region directly above the ring) can be adjusted.

[0033] For example, in the case of processing a silicon wafer having a diameter of 300 mm, the disk-shaped member 111 is a disk-shaped member having a diameter of 290 to 310 mm. The thickness of the disk-shaped member 111 varies depending on the internal structure, but can be, for example, 15 to 45 mm. The annular member 115 is a disk-shaped member having an inner diameter of 291 to 311 mm and an outer diameter of 320 to 400 mm. These dimensions are appropriately set according to the dimensions of the silicon wafer to be processed. The thickness of the annular member 115 is set to be thinner than the thickness of the disk-shaped member 111. In addition, one main surface 117 of the annular member may be disposed at a lower position in the thickness direction than one main surface 113 of the disk-shaped member. In that case, the thickness of the annular member 115 may be the same as the thickness of the disk-shaped member 111.

[0034] The ceramic base 110 is made of ceramics. This allows the difference in CTE with the ceramic insulating member 140 to be small. In addition, structures such as a coolant flow path 119 can be provided inside the ceramic base 110. The ceramic base 110 is made of, for example, ceramics containing SiC, ceramics containing AlN, or Al 2 O 3 The insulating layer 11 can be formed of a ceramic material containing the above-mentioned element.

[0035] The ceramic base 110 is preferably made of ceramics having a thermal conductivity of 70 W / mK or more. As a result, the ceramic base 110 itself has high thermal conductivity, and can be suitably used as a cooling ceramic base 110. Examples of ceramics having a thermal conductivity of 70 W / mK or more include ceramics containing SiC and ceramics containing AlN.

[0036] The ceramic base 110 is preferably made of conductive ceramics. This allows one main surface 113 of the disk-shaped member or one main surface 117 of the annular member to be directly used as the first plasma generating section 150 or the second plasma generating section 160. In this configuration, it is not necessary to form a high-frequency electrode on the semiconductor substrate processing base 100, and manufacturing costs can be reduced.

[0037] The ceramic base 110 is preferably made of ceramics containing SiC. This allows the use of aqueous media, which have been avoided due to the risk of corrosion of the coolant flow path of the conventional Al base. In addition, the thermal conductivity of SiC itself is high, so it can be suitably used as the ceramic base 110 for cooling. In addition, since SiC itself has electrical conductivity, it can also serve as an electrode for high-frequency current. Furthermore, the CTE difference with the ceramic insulating member 140 can be reduced, and peeling between the ceramic base 110 and the ceramic insulating member 140 and warping of the ceramic insulating member 140 can be suppressed. The ceramics containing SiC refer to ceramics containing SiC and having a thermal conductivity of 70 W / mK or more, as well as ceramics containing SiC that contain 50 wt% or more of SiC. The same applies to ceramics containing AlN.

[0038] The disk-shaped member 111 preferably has a coolant flow path 119 therein. This allows heat to be absorbed from the substrate by the coolant in the coolant flow path 119. When the disk-shaped member 111 has a cooling function, the cooling function may be something other than the coolant.

[0039] When the disk-shaped member 111 includes the refrigerant flow passage 119, the refrigerant flow passage 119 may be formed in a tubular shape. In this case, the width of the refrigerant flow passage 119 is preferably 1 mm or more and 60 mm or less. The cross-sectional shape of the refrigerant flow passage 119 is not limited to a rectangle, and may be any shape that can be manufactured, such as a circle, an ellipse, a semicircle, or a stepped shape. The refrigerant flow passage 119 is preferably a type that circulates a low-temperature chiller. Therefore, the refrigerant flow passage 119 is preferably formed with an inlet for introducing the chiller and an outlet for discharging the chiller. In this case, the refrigerant flow passage 119 is connected to a chiller unit provided outside the reduced pressure container.

[0040] The coolant flow path 119 may have a substantially annular shape centered at the center of the disk-shaped member 111 when viewed from above the disk-shaped member 111. The term "substantially annular shape" includes a shape in which some of the arcs of the annular shape are not connected, and a normal annular shape.

[0041] The refrigerant flow paths 119 may be arranged concentrically around the center of the disk-shaped member 111 in a shape seen through from above the disk-shaped member 111. The concentrically arranged, approximately annular refrigerant flow paths 119 may be double, triple or more. The concentrically arranged, approximately annular refrigerant flow paths 119 may be connected inside the disk-shaped member 111, or each may be formed with an inlet and an outlet.

[0042] The width of the gap between adjacent refrigerant flow paths 119 (the width of the disk-shaped member 111 present in the gap between adjacent refrigerant flow paths 119) is preferably 2 mm or more. Also, the width of the gap between adjacent refrigerant flow paths 119 is preferably 25% or more of the width of the refrigerant flow path 119. This makes it possible to maintain the strength of the disk-shaped member 111 even if the refrigerant flow path 119 is formed inside the disk-shaped member 111 made of ceramics.

[0043] The refrigerant flow passage 119 may include a linear shape. Alternatively, a substantially annular refrigerant flow passage 119 may be combined with a linear refrigerant flow passage 119. The substantially annular refrigerant flow passage 119 and the linear refrigerant flow passage 119 may be in communication with each other.

[0044] The conductive film 120 is formed on the side surface 112 of the disk-shaped member. The conductive film 120 supplies power to the first plasma generating unit 150. This allows the high-frequency large current used in the plasma process to be dispersed in the disk-shaped member 111, making it possible to suppress the occurrence of localized non-uniformity in the ion sheath and hot spots caused by conventional power supply terminals. The thickness of the conductive film 120 is preferably 10 μm or more and 1000 μm or less.

[0045] The conductive film 120 may be formed on the entire surface of the side surface 112 of the disk-shaped member, or may be formed on a part of the side surface 112 of the disk-shaped member. When the conductive film 120 is formed on a part of the side surface 112 of the disk-shaped member, it is preferable that at least a part of the conductive film 120 is formed so as to connect one main surface 113 of the disk-shaped member to the opposite main surface. In this case, it is preferable that the width of the conductive film 120 on the side surface 112 of the disk-shaped member in the direction parallel to the one main surface 113 of the disk-shaped member is 50 mm or more. The conductive film 120 may be formed on a part of the lower surface or upper surface of the disk-shaped member 111 for electrical connection.

[0046] The conductive film 120 is preferably an Al film with a purity of 99.8% or more, which can reduce the impedance of the conductive film with respect to high frequency current and is effective for high power processes that pass a large amount of heat through the semiconductor process.

[0047] The power supply member 130 is formed on the annular member 115. The power supply member 130 supplies power to the second plasma generation unit 160. The power supply member 130 may be a terminal 132 inserted into a terminal hole formed in the annular member 115. This is because, even if the terminal 132 is used to supply power to the second plasma generation unit 160 in the annular member 115, there is less risk of localized non-uniformity of the ion sheath or hot spots occurring compared to the disk-shaped member 111.

[0048] Ceramic insulating member 140 is composed of disk-shaped insulating member 141 formed on one main surface 113 of the disk-shaped member, and annular insulating member 145 formed on one main surface 117 of the annular member. Disk-shaped insulating member 141 has a substrate mounting surface. Annular insulating member 145 has a focus ring mounting surface.

[0049] The ceramic insulating member 140 is preferably formed by a ceramic sprayed film. This allows the ceramic insulating member 140 to be formed as a dense and thin member having electrical insulation properties. In addition, the thermal resistance of the ceramic insulating member 140 can be reduced. The ceramic insulating member 140 can be formed directly on the ceramic substrate 110. Similarly, when the first plasma generating unit 150 or the second plasma generating unit 160 is the second conductive film 122 or the third conductive film 123 described below, the ceramic insulating member 140 can be formed directly thereon. When the ceramic insulating member 140 is formed by a ceramic sprayed film, the thickness of the ceramic insulating member 140 is preferably 0.5 mm or more and 2 mm or less.

[0050] The ceramic insulating member 140 is made of AlN or Al 2 O 3 It is preferable that the ceramic insulating member 140 is made of a ceramic containing SiC as a main component. This reduces the difference in CTE between the ceramic base 110 and the ceramic insulating member 140, and therefore, peeling or warping between the ceramic insulating member 140 and the ceramic base 110 is suppressed when a large amount of heat is input from the process, resulting in a stable structure. "Mainly composed" refers to ceramics containing 50 wt% or more of that compound. In particular, when the ceramic base 110 is made of a ceramic containing SiC, a ceramic containing AlN, or Al 2 O 3 When the ceramic insulating member 140 is made of a ceramic containing AlN as a main component, or 2 O 3 It is preferable to form the ceramics containing the above as the main component, since this can sufficiently reduce the CTE difference.

[0051] The first plasma generating unit 150 is provided on one main surface 113 side of the disk-shaped member, and is electrically connected to the conductive film 120. The second plasma generating unit 160 is provided on one main surface 117 side of the annular member or inside the annular insulating member 145, and is electrically connected to the power supply member 130. In this way, by connecting separate high-frequency power sources to the first plasma generating unit 150 and the second plasma generating unit 160, the plasma generation can be adjusted individually.

[0052] When the disk-shaped member 111 is made of conductive ceramics, the first plasma generating section 150 is preferably one of the main surfaces 113 of the disk-shaped member. When the annular member 115 is made of conductive ceramics, the second plasma generating section 160 is preferably one of the main surfaces 117 of the annular member. This eliminates the need to form a high-frequency electrode on the semiconductor substrate processing base 100, thereby reducing manufacturing costs. Either the first plasma generating section 150 or the second plasma generating section 160 may have the above configuration.

[0053] [Second embodiment] (Configuration of semiconductor substrate processing base) A semiconductor substrate processing base according to a second embodiment of the present invention will be described with reference to FIG. 2. FIG. 2 is a schematic cross-sectional view showing an example of a semiconductor substrate processing base according to the second embodiment of the present invention. The basic configuration of the semiconductor substrate processing base 100 according to the second embodiment is similar to that of the semiconductor substrate processing base 100 according to the first embodiment. The semiconductor substrate processing base 100 according to the second embodiment includes a ceramic base 110, a conductive film 120, a power supply member 130, a ceramic insulating member 140, a first plasma generating unit 150, and a second plasma generating unit 160. The following describes the differences from the semiconductor substrate processing base 100 according to the first embodiment. Note that the features of different embodiments may be combined and applied.

[0054] The ceramic insulating member 140 is preferably made of a ceramic sintered body. This results in a ceramic insulating member 140 that is dense and highly thermally conductive, and has electrical insulation properties. The thermal resistance of the ceramic insulating member 140 can also be reduced. Furthermore, electrodes can be easily formed inside the ceramic insulating member 140. When the ceramic insulating member 140 is made of a ceramic sintered body, the ceramic insulating member 140 preferably has a thickness of 0.5 mm or more and 10 mm or less. However, when electrodes are embedded inside the ceramic insulating member 140, the ceramic insulating member 140 may have a thickness greater than this.

[0055] When the ceramic insulating member 140 is formed of a ceramic sintered body, it is preferable that the ceramic insulating member 140 is bonded to the ceramic base 110 with an organic adhesive. This allows the adhesive layer 170 to be provided according to the CTE difference between the ceramic base 110 and the ceramic insulating member 140, and can improve the reliability of the bond even when the CTE difference between the ceramic base 110 and the ceramic insulating member 140 is relatively large. In addition, the freedom of selection of the materials for the ceramic base 110 and the ceramic insulating member 140 is increased.

[0056] When an organic adhesive is used, it is preferable that a filler is added to the organic adhesive to enhance thermal conductivity. The thermal conductivity of the adhesive layer 170 is preferably 0.4 W / mK or more. The thickness of the adhesive layer 170 is preferably 100 μm or less, more preferably 70 μm or less, and even more preferably 50 μm or less. This allows a large amount of heat to be transferred. In the semiconductor substrate processing base 100 of the present invention, the base material and the insulating member are both made of ceramics, and the CTE difference is smaller than in the past, so there is no problem even if the thickness of the adhesive layer 170 is thin. On the other hand, if the thickness is thicker than 100 μm, the thermal resistance of the adhesive layer 170 may not be negligible even if a highly thermally conductive organic adhesive is used. The lower limit of the thickness of the adhesive layer 170 can be, for example, 10 μm or more. This is because if the thickness is thinner than this, it becomes difficult to control the thickness.

[0057] Even when the ceramic insulating member 140 is formed of a ceramic sintered body, if the difference in CTE between the ceramic base 110 and the ceramic insulating member 140 is sufficiently small, the ceramic base 110 and the ceramic insulating member 140 may be bonded directly or by a brazing material (including a thin metal film) containing a metal such as In, Al, or Au.

[0058] The first plasma generating section 150 is preferably a second conductive film 122 formed on one main surface 113 side of the disk-shaped member. The second plasma generating section 160 is preferably a third conductive film 123 formed on one main surface 117 side of the annular member. This allows a high-frequency power source to be connected to the plasma generating section, and the semiconductor substrate processing base 100 can be used for high-power processing. Either the first plasma generating section 150 or the second plasma generating section 160 may have the above configuration. The second conductive film 122 or the third conductive film 123 may be formed when the ceramic base 110 is made of conductive ceramics. The second plasma generating section 160 may be a high-frequency electrode provided inside the annular insulating member 145.

[0059] The power supply member 130 is preferably a fourth conductive film 124 formed on the side surface 116 of the annular member (the inner or outer side surface of the annular member 115). This makes it possible to avoid current concentration even in the annular member 115, and further suppresses localized non-uniformity of the ion sheath and the occurrence of hot spots.

[0060] The fourth conductive film 124 may be formed on the entire inner side surface or the outer side surface of the annular member 115, or may be formed on a part of the inner side surface or the outer side surface of the annular member 115. When the fourth conductive film 124 is formed on a part of the side surface 116 of the annular member, it is preferable that at least a part of the fourth conductive film 124 is formed so as to connect one main surface 117 of the annular member to the opposite main surface. In this case, the width of the fourth conductive film 124 on the side surface 116 of the annular member in a direction parallel to one main surface 117 of the annular member is preferably 50 mm or more. The fourth conductive film 124 may be formed on both the inner side surface and the outer side surface of the annular member 115. The fourth conductive film 124 may be formed on a part of the lower surface or the upper surface of the annular member 115 for electrical connection. The material and thickness of the second conductive film 122, the third conductive film 123, or the fourth conductive film 124 may be the same as or different from the material and thickness of the conductive film 120.

[0061] [Third embodiment] (Configuration of semiconductor substrate processing base) A semiconductor substrate processing base according to a third embodiment of the present invention will be described with reference to FIG. 3. FIG. 3 is a schematic cross-sectional view showing an example of a semiconductor substrate processing base according to the third embodiment of the present invention. The basic configuration of the semiconductor substrate processing base 100 according to the third embodiment is similar to that of the semiconductor substrate processing base 100 according to the first and second embodiments. The semiconductor substrate processing base 100 according to the third embodiment includes a ceramic base 110, a conductive film 120, a power supply member 130, a ceramic insulating member 140, a first plasma generating unit 150, and a second plasma generating unit 160. The following describes the differences from the semiconductor substrate processing base 100 according to the first and second embodiments.

[0062] The disk-shaped insulating member 141 is preferably an electrostatic chuck 180 in which an electrostatic attraction electrode 182 is embedded. By using the disk-shaped insulating member 141 as the electrostatic chuck 180, the substrate can be more strongly attracted to the substrate mounting surface, and the heat input to the substrate can be more efficiently transferred to the ceramic base material 110. When the disk-shaped insulating member 141 is the electrostatic chuck 180, the disk-shaped insulating member 141 is made of a ceramic sintered body.

[0063] The electrostatic attraction electrode 182 is embedded in the disk-shaped insulating member 141. The electrostatic attraction electrode 182 may have various shapes, such as a mesh shape or a foil shape, and may be made of various materials, such as molybdenum and tungsten.

[0064] Power may be supplied to the electrostatic attraction electrode 182 through a terminal (not shown). This is because, unlike a high-frequency electrode, the electrostatic attraction electrode 182 consumes small current even when power is supplied through a terminal, and there is little risk of localized non-uniformity of the ion sheath or hot spots occurring.

[0065] The semiconductor substrate processing base 100 further includes a support table 190 that supports the ceramic substrate 110, and the disk-shaped member 111 and the annular member 115 are preferably arranged concentrically on the support table 190. This makes it easier to independently control the high-frequency currents to the disk-shaped member 111 and the annular member 115. In addition, the heat input to the ceramic substrate 110 is insulated by the support table 190, so that the surface temperature of the ceramic substrate 110 is smoothed.

[0066] The support base 190 can be formed of an electrically insulating member. The ceramic substrate 110 may or may not be fixed to the support base 190. The support base 190 may have a structure such as a groove or a protrusion that defines the position of the disk-shaped member 111 or the annular member 115.

[0067] [How to use the semiconductor substrate processing stand] Next, an example of a method of using the semiconductor substrate processing base according to the embodiment of the present invention will be described. FIG. 4 is a schematic cross-sectional view showing a reduced pressure vessel and a semiconductor substrate processing base installed therein. In this example of a method of using the semiconductor substrate processing base, first, a high frequency power source 1 is connected to a conductive film formed on the side of a disk-shaped member. A high frequency power source 2 is also connected to the annular member. The counter electrode is also grounded. Next, a substrate is placed on the substrate placement surface of the disk-shaped insulating member. Next, the high frequency power supply By passing a high frequency current through 1 or 2, plasma discharge is generated between the opposing electrodes in the reduced pressure vessel, and the substrate is processed. Although the semiconductor substrate processing base 100 in Fig. 3 is grounded in Fig. 4, the semiconductor substrate processing base 100 in Fig. 1, Fig. 2, or another configuration may be installed.

[0068] Thus, the semiconductor substrate processing base 100 of the present invention can be applied to processes using plasma and is suitable for etching, film formation, etc. The high frequency power source may be applied to the counter electrode side, in which case the electrode provided on the electrically insulating ceramic member or the disk-shaped ceramic base material is grounded.

[0069] [Method of manufacturing a semiconductor substrate processing base] Next, an example of a method for manufacturing a semiconductor substrate processing base according to an embodiment of the present invention will be described. Fig. 5 is a flow chart showing an example of a method for manufacturing a semiconductor substrate processing base according to an embodiment of the present invention. As shown in Fig. 5, the method for manufacturing a semiconductor substrate processing base according to an embodiment of the present invention includes a step (step S1) of preparing a ceramic base material composed of a disk-shaped member and an annular member made of ceramics containing SiC, and a step (step S2) of forming an Al film on at least a part of the side surface of the disk-shaped member by a cold spray method.

[0070] 6 is a flow chart showing an example of a method for manufacturing a semiconductor substrate processing base according to an embodiment of the present invention. As shown in FIG. 6, the method for manufacturing a semiconductor substrate processing base according to an embodiment of the present invention includes a step (step T1) of preparing a ceramic base material consisting of a disk-shaped member and an annular member made of ceramics containing SiC, a step (step T2) of forming an Al film on at least a part of the side surface of the disk-shaped member by a cold spray method, a step (step T3) of forming a disk-shaped insulating member on one main surface of the disk-shaped member, and a step (step T4) of forming an annular insulating member on one main surface of the annular member. Steps T1 and T2 are the same as steps S1 and S2, respectively. Either step T3 or step T4 may be performed first.

[0071] 5 and 6 show a characteristic flow of the manufacturing method of the present invention. The ceramic base material prepared in step S1 may be, for example, a ceramic base material manufactured by the following manufacturing method. Also, the disk-shaped insulating member formed in step T3 or the annular insulating member formed in step T4 may be a disk-shaped insulating member or annular insulating member manufactured by the following manufacturing method.

[0072] In the following, as a specific example, a method for manufacturing a semiconductor substrate processing base in which the ceramic base is made of a sintered SiC ceramics and the ceramic insulating member is made of a sintered AlN ceramics will be described.

[0073] (Method of manufacturing ceramic substrate) The ceramic substrate of the semiconductor substrate processing base according to the embodiment of the present invention is produced, for example, by a molded body hot pressing method described below. The method for producing the ceramic substrate is not limited to this method, and may be, for example, a powder hot pressing method or a conventional green sheet lamination method. The powder hot pressing method is a method in which ceramic raw material powder and a predetermined heating resistor or electrode are alternately stacked to embed the heating resistor or electrode inside the ceramic, and then the resulting product is uniaxially hot-pressed and fired.

[0074] The method for manufacturing a ceramic substrate for a semiconductor substrate processing base according to an embodiment of the present invention by a molded body hot pressing method includes a ceramic molded body forming step, a ceramic degreased body preparing step, a firing step, a ceramic sintered body processing step, a disk-shaped member precursor joining step, a ceramic substrate processing step, and a conductive film forming step. Note that, in the following manufacturing method, a method for manufacturing a ceramic substrate in which a refrigerant flow path is formed in the disk-shaped member is described, but the refrigerant flow path may not be required.

[0075] In the ceramic compact forming step, a plurality of ceramic compacts are formed from ceramic raw material powder mainly composed of, for example, SiC (silicon carbide). If necessary, a sintering aid may be added. For example, the sintering aid B 4 Additives such as C, C, binder, plasticizer, and dispersant are appropriately added and mixed to prepare a slurry, and the granulated powder is granulated by a spray-drying method or the like. The granulated powder can then be pressure-molded to form a plurality of ceramic molded bodies. The ceramic molded body to become the disk-shaped member and the ceramic molded body to become the annular member are preferably separate ceramic molded bodies.

[0076] The SiC ceramic raw material powder is preferably of high purity, preferably 99% or more, more preferably 99.9% or more, and preferably has an average particle size of 0.1 μm or more and 1.0 μm or less.

[0077] The mixing method may be either wet or dry, and a mixer such as a ball mill or a vibration mill may be used. As a molding method, a known method such as uniaxial pressing or cold isostatic pressing (CIP) may be used. The method of forming the ceramic molded body is not limited to pressing, and may be, for example, green sheet lamination or casting, and the ceramic molded body can be manufactured by appropriately degreasing or further calcining the material.

[0078] After molding, the ceramic molded body may be machined to adjust the shape of the molded body. The machined processing may be performed after degreasing.

[0079] In the ceramic degreased body preparation process, a plurality of ceramic molded bodies are degreased at a predetermined temperature or higher for a predetermined time or longer to prepare a plurality of ceramic degreased bodies. The ceramic molded bodies are heat-treated, for example, at a temperature of 500°C to 900°C to become ceramic degreased bodies. The degreasing time is preferably 1 hour to 120 hours. For degreasing, an atmospheric furnace or a nitrogen atmosphere furnace can be used, but an atmospheric furnace is preferred to remove organic components of the binder.

[0080] In the firing step, the formed ceramic degreased body is uniaxially pressurized and fired or pressureless fired to form a plurality of ceramic sintered bodies. In the case of uniaxially pressurized and fired, the pressure is preferably 4 MPa or more. The firing temperature is preferably 2000°C or more and 2200°C or less. The firing time is preferably 1 hour or more and 12 hours or less, and more preferably 1 hour or more and 5 hours or less. The firing atmosphere is, for example, a nitrogen or inert gas atmosphere, but may also be a vacuum atmosphere. Also, the vacuum atmosphere may be followed by an inert gas atmosphere. As a result, the plurality of ceramic degreased bodies are sintered to form a plurality of SiC ceramic sintered bodies.

[0081] In the ceramic sintered body processing step, one or more SiC ceramic sintered bodies are processed as required to form multiple disk-shaped member precursors. The multiple disk-shaped member precursors are, for example, disk-shaped member precursors that become the lid of the refrigerant flow path, disk-shaped member precursors in which a part of the refrigerant flow path is formed, and the like. For example, a groove that becomes the refrigerant flow path after bonding is formed in one or more SiC ceramic sintered bodies. At this time, the refrigerant flow path may be formed by covering a groove formed in one disk-shaped member precursor with another disk-shaped member precursor (SiC ceramic sintered body). In addition, the refrigerant flow path may be formed by combining grooves formed in two disk-shaped member precursors. According to this method, refrigerant flow paths of various shapes can be formed. The annular member may be formed of one ceramic sintered body, or may be formed of multiple ceramic sintered bodies.

[0082] In the disk-shaped member precursor bonding step, a plurality of disk-shaped member precursors are bonded to produce a disk-shaped member. The bonding can be performed using either a bonding method that uses a bonding material or a bonding method that does not use a bonding material.

[0083] First, a bonding method using a bonding material will be described. First, a bonding material is prepared and applied to at least one of the end faces of the disk-shaped member precursor on the bonding side. The end face of the disk-shaped member precursor on the bonding side is preferably polished to a surface roughness Ra of 1.6 μm or less, and more preferably to 0.4 μm or less. The thickness of the applied bonding material is preferably 5 μm or more and 30 μm or less.

[0084] Next, a plurality of disk-shaped member precursors are arranged and heated while applying pressure in a direction perpendicular to the upper surface. The pressure is preferably 5 kPa or more. The heating temperature is preferably 1500°C or more and 1800°C or less. The heating time is preferably 0.5 hours or more and 5 hours or less. The heating atmosphere is, for example, a nitrogen or inert gas atmosphere, but may also be a vacuum atmosphere. In this way, a plurality of disk-shaped member precursors can be joined to form a disk-shaped member having a refrigerant flow path therein.

[0085] The bonding material may be any material that can bond the disk-shaped member precursors together. For example, a bonding material may be used that is made of SiC powder, which is the same main component as the disk-shaped member precursors, and is made of B. 4 It may be a paste of mixed powder containing at least C powder, or a paste containing 90 wt% or more of SiC and, if necessary, containing Si or B to adjust the temperature at which it becomes molten during bonding.

[0086] Next, a bonding method without using a bonding material will be described. First, a plurality of disk-shaped member precursors are arranged. The end faces of the disk-shaped member precursors on the bonding side are preferably polished to a surface roughness Ra of 0.1 μm or less. Next, the disk-shaped member precursors are heated while being pressed in a direction perpendicular to the upper surface. Among the bonding conditions, the pressure is preferably 4 MPa or more. The heating temperature is preferably 1600° C. or more and 2000° C. or less. The heating time is preferably 0.5 hours or more and 6 hours or less. The heating atmosphere is, for example, a nitrogen or inert gas atmosphere, but may also be a vacuum atmosphere. In this way, a plurality of disk-shaped member precursors can be bonded to form a disk-shaped member having a refrigerant flow path inside.

[0087] In the above-mentioned method, the disk-shaped member precursor is formed from a ceramic sintered body and bonded to form the disk-shaped member, but the disk-shaped member precursor may be formed from a ceramic calcined body and bonded and sintered to produce the disk-shaped member. In addition, when the structure of the refrigerant flow path is simple, the disk-shaped member can be produced by processing a ceramic degreased body, laminating and sintering it. When the structure of the refrigerant flow path is complex or when the dimensional accuracy of the refrigerant flow path is required to be high, the method of bonding ceramic sintered bodies is preferable.

[0088] In the ceramic substrate processing step, the outer shape of the ceramic substrate is processed. The outer shape of the ceramic substrate refers to the outer shape of the disk-shaped member and the outer shape of the annular member. In addition, when the disk-shaped insulating member is used as an electrostatic chuck and a terminal is used for its electrical connection, a through hole or the like is drilled for connecting the terminal. The through hole or the like for connecting the terminal may be drilled before the disk-shaped member precursor bonding step.

[0089] In the conductive film forming step, a conductive film is formed on at least a part of the side surface of the disk-shaped member. The conductive film may be formed on the entire side surface of the disk-shaped member. Also, for electrical connection, a conductive film may be formed on a part of the upper surface or lower surface of the disk-shaped member. In this case, the conductive film formed on the upper surface or lower surface is formed continuously with the conductive film on the side surface. Also, a conductive film (second conductive film) may be formed on the upper surface of the disk-shaped member as the first plasma generating part. A conductive film (third conductive film) may be formed on the upper surface of the annular member as the second plasma generating part. A conductive film (fourth conductive film) may be formed on the inner or outer side surface of the annular member as the power supply member. The material and thickness of the second conductive film, the third conductive film, or the fourth conductive film may be the same as or different from the material and thickness of the conductive film.

[0090] The conductive film is preferably formed by a cold spray method. The cold spray method allows film formation at room temperature or a relatively low temperature, and can suppress peeling of the conductive film from the ceramic substrate. The conductive film is preferably an Al film with a purity of 99.8% or more. When an Al conductive film is formed by a cold spray method, the purity can be set in a wide range of, for example, 99.7 to 99.99% and the thickness can be set in a wide range of 100 to 2000 μm. The electrical conductivity of the conductive film can be adjusted by adjusting the purity of the raw material powder. A conductive film with high conductivity can function as a sufficient high-frequency conductor even if it is thin, so the film thickness may be adjusted according to the purity of the raw material powder. The conductive film can also be formed by a PVD method.

[0091] (Method of manufacturing ceramic insulating members) When the ceramic insulating member of the semiconductor substrate processing base according to the embodiment of the present invention is made of a ceramic sintered body, it is produced, for example, by a molded body hot pressing method described below. Note that the method for producing the ceramic insulating member is not limited to this method, and may be, for example, a powder hot pressing method or a conventional green sheet lamination method.

[0092] The method for manufacturing a ceramic insulating member for a semiconductor substrate processing base according to an embodiment of the present invention by hot pressing a molded body includes a ceramic molded body forming step, a ceramic degreased body preparing step, a firing step, and a ceramic sintered body processing step.

[0093] In the ceramic compact forming step, for example, a plurality of ceramic compacts are formed from ceramic raw material powder mainly composed of AlN (aluminum nitride). If necessary, a sintering aid may be added. For example, the sintering aid Y may be added to the AlN ceramic raw material powder. 2 O 3 Additives such as binders, plasticizers, and dispersants are appropriately added and mixed to prepare a slurry, and the granulated powder is granulated by a spray drying method or the like. The granulated powder can then be pressure-molded to form a plurality of ceramic molded bodies. The ceramic molded body to be the disk-shaped insulating member and the ceramic molded body to be the annular insulating member are preferably formed as separate ceramic molded bodies.

[0094] The AlN ceramic raw material powder is preferably of high purity, preferably 99% or more, more preferably 99.9% or more, and preferably has an average particle size of 0.1 μm or more and 1.0 μm or less.

[0095] The mixing method and molding method are the same as those for the above-mentioned SiC ceramics. After molding, the ceramic molded body may be machined to adjust the shape of the molded body. When the electrostatic attraction electrode is embedded in the disk-shaped insulating member, a groove having a shape matching the shape of the electrostatic attraction electrode may be formed on one side of the ceramic molded body (the joint surface with another ceramic molded body). The machining may be performed after degreasing.

[0096] In the ceramic degreased body preparation process, a plurality of ceramic molded bodies are degreased at a predetermined temperature or higher for a predetermined time or longer to prepare a plurality of ceramic degreased bodies. The conditions for the ceramic degreased body preparation process are the same as those for the SiC ceramics described above.

[0097] When the disk-shaped insulating member is used as an electrostatic chuck, i.e., when the electrostatic attraction electrode is embedded in the disk-shaped insulating member, the electrostatic attraction electrode is prepared in a shape that corresponds to the design and use of the semiconductor substrate processing base. The shape of the electrostatic attraction electrode can be various shapes, such as a mesh shape or a foil shape. In addition, the material can be various materials, such as molybdenum and tungsten. The electrostatic attraction electrode and a plurality of ceramic degreased bodies are combined to form a laminate formed in a flat plate shape and in which the electrostatic attraction electrode is embedded.

[0098] In the firing step, the formed ceramic degreased body or laminate is uniaxially pressurized and fired or pressureless fired to form a ceramic sintered body. In the case of uniaxially pressurized and fired, the pressure is preferably 1 MPa or more. The firing temperature is preferably 1700°C or more and 2000°C or less. The firing time is preferably 1 hour or more and 12 hours or less, and more preferably 1 hour or more and 5 hours or less. The firing atmosphere is, for example, a nitrogen or inert gas atmosphere, but may also be a vacuum atmosphere. As a result, one or more ceramic degreased bodies are sintered to become an AlN ceramic sintered body.

[0099] In the ceramic sintered compact processing step, the AlN ceramic sintered compact is subjected to necessary processing such as processing of the outer shape to form a ceramic insulating member.

[0100] (Joining process) In the bonding process, an appropriate bonding method is selected according to the materials and CTE difference of the prepared ceramic base material and ceramic insulating member. Bonding methods include bonding with brazing material containing metals such as In, Al, and Au, and bonding with inorganic or organic adhesives.

[0101] When bonding with a brazing material, it is preferable that the bonding surfaces of the ceramic substrate and the ceramic insulating member have a surface roughness Ra of 1.6 μm or less. The brazing material is placed between the bonding surfaces of the ceramic substrate and the ceramic insulating member, and the bonding is performed by heating to the melting point or glass transition point of the brazing material. The brazing material may be a thin metal film.

[0102] When bonding is performed using an inorganic or organic adhesive, the bonding surfaces of the ceramic base material and the ceramic insulating member preferably have a surface roughness Ra of 1.6 μm or less. The adhesive is then placed between the bonding surfaces of the ceramic base material and the ceramic insulating member, and the bonding is performed by heating up to the glass transition point of the adhesive. When using an adhesive, it is preferable that a filler is added to the adhesive to increase thermal conductivity.

[0103] In this manner, the semiconductor substrate processing base according to the embodiment of the present invention can be manufactured.

[0104] As described above, the semiconductor substrate processing base or ceramic base of the present invention can adjust the ion sheath at the outer periphery of the substrate, and can suppress the occurrence of localized non-uniformity of the ion sheath and hot spots caused by conventional power supply terminals. Also, peeling and warping of the ceramic insulating member from the ceramic base can be suppressed, resulting in a stable structure. Moreover, the manufacturing method of the present invention can manufacture such a semiconductor substrate processing base.

[0105] The present invention is not limited to the above-described embodiment, and it goes without saying that various modifications and equivalents are included within the spirit and scope of the present invention. In addition, the structure, shape, number, position, size, etc. of the components shown in each drawing are for convenience of explanation and may be changed as appropriate. [Explanation of symbols]

[0106] 100 Semiconductor substrate processing base 110 Ceramic substrate 111 Disk-shaped member 112 Side of disc-shaped member 113 One main surface of a disk-shaped member 115 Circular member 116 Side of Circular Component 117 One main surface of a circular member 119 Coolant flow path 120 Conductive film 122 Second conductive film 123 Third Conductive Film 124 Fourth Conductive Film 130 Power supply components 132 terminals 140 Ceramic insulating materials 141 Disk-shaped insulating member 145 Annular insulating member 150 First plasma generating unit 160 Second plasma generating unit 170 Adhesive layer 180 Electrostatic Chuck 182 Electrostatic Adsorption Electrode 190 Support stand

Claims

1. A semiconductor substrate processing base, a ceramic substrate including a disk-shaped member and an annular member disposed on the outside of the disk-shaped member; A conductive film formed on a side surface of the disk-shaped member; a power supply member formed on the annular member; a ceramic insulating member including a disk-shaped insulating member formed on one main surface of the disk-shaped member and an annular insulating member formed on one main surface of the annular member; a first plasma generating unit provided on one main surface side of the disk-shaped member and electrically connected to the conductive film; a second plasma generating unit provided on one main surface side of the annular member or inside the annular insulating member and electrically connected to the power supply member; the ceramic insulating member is formed of a ceramic sintered body, the ceramic insulating member is bonded to the ceramic base material with an organic adhesive, A semiconductor substrate processing base according to claim 1, wherein the organic adhesive layer has a thickness of 100 μm or less.

2. A semiconductor substrate processing base, comprising: a ceramic substrate including a disk-shaped member and an annular member disposed on the outside of the disk-shaped member; A conductive film formed on a side surface of the disk-shaped member; a power supply member formed on the annular member; a ceramic insulating member including a disk-shaped insulating member formed on one main surface of the disk-shaped member and an annular insulating member formed on one main surface of the annular member; a first plasma generating unit provided on one main surface side of the disk-shaped member and electrically connected to the conductive film; a second plasma generating unit provided on one main surface side of the annular member or inside the annular insulating member and electrically connected to the power supply member; 4. The semiconductor substrate processing base according to claim 1, wherein the power supply member is a fourth conductive film formed on an inner or outer side surface of the annular member.

3. A semiconductor substrate processing base, comprising: a ceramic substrate including a disk-shaped member and an annular member disposed on the outside of the disk-shaped member; A conductive film formed on a side surface of the disk-shaped member; a power supply member formed on the annular member; a ceramic insulating member including a disk-shaped insulating member formed on one main surface of the disk-shaped member and an annular insulating member formed on one main surface of the annular member; a first plasma generating unit provided on one main surface side of the disk-shaped member and electrically connected to the conductive film; a second plasma generating unit provided on one main surface side of the annular member or inside the annular insulating member and electrically connected to the power supply member; A support base for supporting the ceramic base material; The semiconductor substrate processing base is characterized in that the disk-shaped member and the annular member are concentrically arranged on the support table.

4. A semiconductor substrate processing base as described in any one of claims 1 to 3, characterized in that the ceramic substrate is formed from a ceramic having a thermal conductivity of 70 W / mK or more.

5. A base for processing semiconductor substrates as described in any one of claims 1 to 3, characterized in that the ceramic substrate is formed from a ceramic containing SiC.

6. A semiconductor substrate processing base as described in any one of claims 1 to 3, characterized in that the ceramic insulating member is formed from a ceramic sintered body or a ceramic sprayed film.

7. The ceramic insulating member is formed of a ceramic sintered body, the ceramic insulating member is bonded to the ceramic base material with an organic adhesive, 4. The semiconductor substrate processing base according to claim 2, wherein the organic adhesive layer has a thickness of 100 [mu]m or less.

8. A semiconductor substrate processing base as described in claim 6, characterized in that the ceramic insulating member is formed from a ceramic having AlN or Al2O3 as its main component.

9. A semiconductor substrate processing base as described in claim 6, characterized in that the disk-shaped insulating member is an electrostatic chuck having an electrode for electrostatic adsorption embedded therein.

10. The semiconductor substrate processing base according to claim 6, wherein the conductive film is an Al film having a purity of 99.8% or more.

11. The ceramic substrate is formed of a conductive ceramic, the first plasma generating portion is one main surface of the disk-shaped member, 4. The semiconductor substrate processing base according to claim 1, wherein the second plasma generating portion is one main surface of the annular member.

12. The first plasma generating portion is a second conductive film formed on one main surface side of the disk-shaped member, 4. The semiconductor substrate processing base according to claim 1, wherein the second plasma generating portion is a third conductive film formed on one main surface of the annular member.

13. A semiconductor substrate processing base as described in claim 1 or claim 2, characterized in that the power supply member is a fourth conductive film formed on the inner or outer side of the annular member.

14. Further comprising a support base for supporting the ceramic substrate, 4. The semiconductor substrate processing base according to claim 1, wherein the disk-shaped member and the annular member are concentrically arranged on the support table.

15. A disk-shaped member having an Al film formed on a side surface thereof; a ring-shaped member disposed outside the disk-shaped member and having a power supply member formed thereon; the disk-shaped member and the annular member are made of ceramics having a thermal conductivity of 70 W / mK or more; The ceramic substrate, wherein the power supply member is a fourth conductive film formed on an inner or outer side surface of the annular member.

16. A disk-shaped member having an Al film formed on a side surface thereof; an annular member disposed outside the disk-shaped member; the disk-shaped member and the annular member are made of ceramics having a thermal conductivity of 70 W / mK or more; Further comprising a support base for supporting the ceramic base material; The ceramic substrate, wherein the disk-shaped member and the annular member are concentrically arranged on the support base.

17. A step of preparing a ceramic substrate comprising a disk-shaped member and an annular member formed of a ceramic containing SiC; forming an Al film on at least a portion of the side surface of the disk-shaped member and on an inner or outer side surface of the disk-shaped member by a cold spray method.

18. A step of forming a disk-shaped insulating member on one main surface of the disk-shaped member; 20. The method for manufacturing a semiconductor substrate processing base according to claim 17, further comprising the step of forming an annular insulating member on one main surface of the annular member.

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