Semiconductor inspection equipment and semiconductor inspection method
The semiconductor inspection apparatus and method address the challenge of inaccurate delay measurement by using photoelectron pulses and absorption current acquisition to synchronize and map signal delays in semiconductor samples.
Patent Information
- Application Number
- JP2024171495
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- Filing Date
- 2024-09-30
- Publication Date
- 2026-07-01
- Estimated Expiration
- 2044-09-30
AI Technical Summary
Conventional semiconductor inspection methods, such as EBAC observation and ultrafast time-resolved scanning electron microscopes, struggle to accurately measure signal delay due to inconsistencies in timing measurements and continuous electron beam irradiation.
A semiconductor inspection apparatus and method utilizing photoelectron pulses generated at precise time intervals, combined with a short-needle and stage absorption current acquisition, to measure signal delay by creating signal delay information through synchronized waveform observation.
Enables accurate and precise measurement of signal delay in semiconductor samples by synchronizing photoelectron pulses with absorption currents, allowing for two-dimensional mapping of delay times and signal amounts.
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Abstract
Citation Information
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