Hole transfer structure of quantum dot light emitting diode, diode using the same and manufacturing method of the same

The hole transport structure in QLEDs, featuring an excess electron removal layer and resistance contact inducing layer, addresses hole injection imbalance, improving efficiency and lifespan by reducing electron stagnation and manufacturing costs.

KR102999885B1Active Publication Date: 2026-08-03INDUSTRYACADEMIC COOPERATION FOUNDATION GYEONGSANG NATIONAL UNIVERSITY
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Patent Information

Application Number
KR1020250041035
Authority / Receiving Office
KR · KR
Patent Type
Patents
Current Assignee / Owner
Filing Date
2025-03-31
Publication Date
2026-08-03
Estimated Expiration
2045-03-31

AI Technical Summary

Technical Problem

Quantum dot light-emitting diodes (QLEDs) face issues with hole injection imbalance, leading to performance degradation and reduced lifespan.

Method used

A hole transport structure comprising a hole injection layer, an excess electron removal layer, and a resistance contact inducing layer, where the excess electron removal layer is made of molybdenum oxide or vanadium oxide, and the resistance contact inducing layer is doped with phosphomolybdic acid and has a higher HOMO energy level than the hole transport layer, minimizing electron stagnation and improving efficiency.

Benefits of technology

The structure effectively reduces electron stagnation, enhancing the efficiency and lifespan of QLEDs by lowering the energy barrier and absorbing excess electrons, while being cost-effective to manufacture.

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Abstract

A hole transport structure of a quantum dot light-emitting diode according to the present invention comprises a hole injection layer, an excess electron removal layer stacked on one side of the hole injection layer, an ohmic contact induction layer stacked on one side of the excess electron removal layer, and a hole transport layer stacked on one side of the ohmic contact induction layer, wherein the excess electron removal layer removes excess electrons generated at the interface between the hole injection layer and the ohmic contact induction layer.
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