ADAPTIVE ELECTROMAGNETIC SOURCE SYSTEM (AESS)

Abstract

The present invention concerns a modular RIS system developed for the purpose of directing and controlling electromagnetic waves, and a reconfigurable smart surface structure. The modular RIS system in the present invention consists of RIS modules. The Controller Board (CB) and the Reflective Surface Board (RSB) (block) make up the RIS module. The layers (Layers I, II, III) that make up the Reflective Surface Board (RSB) of the RIS module in the present invention contain four separate copper layers (2),?(7),?(8),?(9), two in Layer I and one each in Layers II and III, and three separate dielectric layers (3),?(4),?(6), one in each Layer. Multilayer (Layers I, II, III)The layers consist of reflective surface units (2), an electromagnetic pattern layer controlled by PIN diodes (upper copper layer (2)), dielectric layers with different electromagnetic properties ((3), (4), (6)) and transmission lines (via path 1 (30a) and via path 2 (35)) that enable the transmission of control signals. Thanks to the PIN diodes controlled via the Controller Board (CC), the electromagnetic behavior of the reflective surface unit (2) can be dynamically changed and electromagnetic waves can be directed in the desired directions. The system in the present invention is designed to be used in wireless communication, radar, sensing, electromagnetic spectrum management and defense industry applications. The multilayer architecture of the structure enables broadband operation, advanced phase control and electromagnetic performance optimization. Unit cells (1) managed by the Controller Card (CC) allow for efficient channeling of electromagnetic energy by adapting to changing environmental and operational conditions. This approach aims to improve communication performance in areas without line of sight, increase electromagnetic coverage, enhance the effectiveness of radar and detection systems, utilize the electromagnetic spectrum more efficiently, and improve the energy efficiency of existing systems.

Description

1 TARIFF 5 ADAPTIVE ELECTROMAGNETIC SOURCE SYSTEM (AESS) Technical Field to Which the Invention Relates The present invention relates to wireless communication systems, electromagnetic wave controlled, metadata. materials, multilayer electromagnetic structures, control systems, sensing systems, and especially in next-generation wireless networks like 5G and beyond, signal coverage and end-user 10 To improve connection quality, preferably in the n78 band (3.3-3.8 GHz) or a different frequency. wireless propagation capabilities using reflective antenna elements operating in these bands A modular and adaptable Reconfigurable Smart system that can be dynamically controlled. It deals with the design and implementation of Reconfigurable Intelligent Surface (RIS) systems. State of the Art 15 In current wireless communication systems, especially the 5G n78 band and the next generation 6G Microwave high-frequency signals used in applications penetrate buildings, walls, and other coverage is weakened or completely blocked due to physical disabilities. the formation of gaps, reduced communication quality in out-of-line areas, and energy Problems such as decreased efficiency occur. These problems affect wireless networks. Since these problems are fundamental obstacles that define their boundaries, solutions to these problems are needed. Developed Reconfigurable Intelligent Surfaces RIS (Resistance to Light) improves coverage performance by controlling the propagation characteristics of electromagnetic waves. among the next generation of technologies that can enhance and dynamically shape the wireless environment is located [1]-[3]. 25 The architecture of RIS systems generally consists of electromagnetic unit cells (1). From PIN diodes that alter the phase response of cells to multiple diodes with different electromagnetic properties It consists of layered dielectric layers and a control-power infrastructure. The dielectric materials used in the layered structure affect the electromagnetic field distribution of the structure. When determining the reflection characteristic, the phase response of each cell (1) via PIN diodes is 30 It can be electronically adjusted and changed. This allows the phase to be adjusted along the reflective surface. the creation of a distribution and, consequently, the determination of the electromagnetic energy It is possible to focus on the directions in the same direction or to direct it in different directions. Studies in the literature indicate that RIS technology significantly improves communication performance. This shows that it has improved. In this context; 35 2 - In the RIS prototype, which operates at a frequency of 3.5 GHz and consists of 2430 unit cells (1), 5 Effective beam for areas outside the line of sight using continuous phase adjustment. It has been shown that the redirection can be carried out [4],[5]. - In addition, it operates at a working frequency of 5.8 GHz and is PIN diode based. Coverage in outdoor conditions with configured low-power RIS systems. It has been shown that the area has been improved, with control units having different bit resolutions. 10 It has been shown that improvement in the signal level received can be achieved by using [6]-[9]. - Also, multilayer structures containing materials with different dielectric constants by using operating frequency, bandwidth, phase gap and reflection characteristics It has been shown that the parameters can be adjusted or optimized. structures that can be used, especially in terms of broadband 5G and 6G communication applications. It is considered to be of a certain quality [1]-[3]. However, a significant portion of the RIS designs included in the known state of the art are single-source. They are implemented in the form of sections and fixed-size surfaces. These types of structures have different installation options. It is failing to adapt to the scenarios, the surface size or geometry If changed, the system may be partially or completely redesigned. 20 This requires a central control unit for numerous electromagnetic cells. Managing it through this system leads to increased complexity of the control unit, and compromises signal integrity and difficulties in achieving synchronization and maintenance and malfunctions In addition to the difficulties in eliminating them, in a single electromagnetic unit cell or A malfunction in the relevant PIN diode could affect the overall electromagnetic field of the entire panel. The fact that it can affect performance is another technical limitation regarding these structures. It is emerging. Therefore, it is necessary to be able to dynamically control the reflection properties of electromagnetic waves. Multilayer dielectric structures and electromagnetic units controllable with PIN diodes. 30 cells (1) consisting of, adaptable to different surface sizes and installation requirements There is a need to develop a modular and scalable RIS architecture. The subject is surface architecture and the control of phase responses of electromagnetic cells. The desired phase distribution can be created and updated in real time. Thus, electromagnetic energy is directed to designated target regions and directions. It can be directed. In this way, the coverage area of ​​communication systems and the quality of the connection are 35. and performance aspects such as energy efficiency can be improved. In light of all this technical information, at the current state of the art, reconfigurable smart different operating frequencies of the surfaces (RIS), different numbers of reflective elements and different control 3 This is achieved using architectures, and phase control is performed via PIN diodes. the operating frequency and band can be adjusted by using multilayer dielectric structures. It is known that parameters such as width, phase gap, and reflection characteristics can be adjusted. Furthermore, such systems can utilize passive reflective surfaces, static metasurface structures, and conventional methods. When considered together with electromagnetic guidance systems, it is mostly used in production. It was determined during the phase that it had stable electromagnetic behavior and during the study 10 It appears that its reconfigurability capability remains limited. However, solutions in the current state of the art involve dynamic and variable operation. a modular and scalable RIS architecture that can adapt to the conditions It involves various limitations in terms of its creation, especially surfaces with constant characteristics. The inability of existing control architectures to adapt to different mission scenarios is a major drawback. insufficient for managing a number of unit cells (1) in a synchronized and low-loss manner and in scaling-up situations, system complexity and maintenance difficulty increase. in terms of systems performance, flexibility, scalability and operational efficiency This makes it difficult to reach the desired technical level. The present invention, however, differs from the known state of the art in that it preferably operates in the 5G n78 frequency band. Functional, with a "Lego-like" interchangeable mechanism as needed: 1x1, 1x2, 1x3, 1x4, 1x5, 1×6, 1×7, 1×8, 2×1, 2×2, 2×3, 2×4, 2×5, 2×6, 2×7, 2×8, 3×1, 3×2, 3×3, 3×4, 3×5, 3×6, 3×7, 3×8, 4×1, 4×2, 4×3, 4×4, 4×5, 4×6, 4×7, 4×8, 5×1, 5×2, 5×3, 5×4, 5×5, 5×6, 5×7, 5×8, 6×1, 6×2, 6×3, 6×4, 6×5, 6×6, 6×7, 6×8, 7×1, 7×2, 7×3, 7×4, 7×5, 7×6, 7×7, 7×8, 8×1, 8×2, 8×3, 25 RIS modules that can be modularly scaled up to sizes such as 8×4, 8×5, 8×6, 8×7, 8×8 (Figure 20). a scalable architecture consisting of a master controller and multiple sub-controllers ON / OFF is achieved by creating a 180-degree phase difference using a hierarchical control structure and PIN diodes. An RIS structure containing a reflective cell structure that provides controlled transitions between states. It offers high scalability thanks to the combined use of these features. Easy maintenance, synchronized and stable phase control, and efficient electromagnetic steering. 30 This ensures modular and reusable structures that can adapt to dynamic environments. Creating a configurable RIS system addresses or significantly reduces the problem. is being reduced. Specifically, by configuring identical, modular RIS modules in a Lego-like manner. the system can be easily scaled physically and maintenance processes can be simplified 35 This ensures the synchronization of numerous reflective elements thanks to the main and sub-controller architecture. It is possible to control the ON / OFF states of the PIN diodes in this way. by using each cell (1) in such a way as to create a 180 degree phase difference between them 4 The electromagnetic response is effectively controlled, thus RF 5 in the n78 band. This ensures that the signal is directed more efficiently towards the receiver. In this way, the surface creating the desired phase distribution and directing electromagnetic energy to the target Higher control compared to the known state of the technique in terms of focusing on the direction. Accuracy and system efficiency are achieved. In this respect, the invention combines 10 of the structural and control approaches known separately in the prior art. It is not merely a combination of modular hardware architecture and hierarchical control. its structure and phase-controlled unit cell (1) design together in a certain integrity Scalability, control stability, and electromagnetic guidance are achieved through its use. a solution that provides improved performance and unexpected technical effects It is placing. 15 The Technical Problem That the Invention Aims to Solve The present invention is physically scalable according to different installation and operating conditions. where a large number of unit cells (1) can be controlled synchronously and stably, maintenance and fault The management of electromagnetic waves in the 5G n78 band has been simplified, and their phase and reflection have been improved. A modular 20 whose characteristics can be controlled and modified to direct it towards the target. It aims to provide an RIS architecture. The fundamental technical problem that the present invention aims to solve is the different setup and operation. Synchronized multiple unit cells (1) that can be physically scaled according to their conditions and enables stable control, facilitating maintenance and fault management. and the phase and reflection characteristics of electromagnetic waves in the 5G n78 frequency band are 25 Modular and capable of being directed in the targeted direction by being modified in a controlled manner. The goal is to create a reconfigurable RIS architecture. The current invention uses the n78 band. Not limited to, but also in 5G and 6G; n1, n2, n3, n5, n7, n8, n12, n14, n20, n25, n28, n29, n30, n34, n38, n39, n40, n41, n46, n47, n48, n50, n51, n53, n65, n66, n67, n70, n71, n74, n75, n76, n77, n78, n79, n80, n81, n82, n83, n84, n86, n88, n89, n90, n91, n92, n93, n94, n96, n97, n98, n99, 30 Also the bands n100, n101, n102, n104, n105, n106, n257, n258, n259, n260, n261, n262, n263 It includes. In this context, limiting control complexity when the system scales up, RIS Modules can be added or removed from the system as needed and unit cells (1) phase Scalability and electromagnetic 35 by reliably checking the responses The aim is to ensure the sustainability of routing performance simultaneously. In conclusion, the present invention solves 5 coverage problems in wireless communication systems. reducing, improving communication performance in areas without line of sight, directing electromagnetic energy, making the electromagnetic spectrum more efficient use, improving the performance of radar and detection systems, changing adapting to operational conditions and increasing the energy efficiency of existing systems It offers solutions to problems such as these. These solutions involve reconfigurable electromagnetic 10 Electronic control of cells, dynamic modification of phase distribution, multi the use of layered electromagnetic architecture and data obtained from sensing systems by updating surface behavior in real time based on the information. is being carried out. Figure Description 15 Figure 1: Layer structure of the sample RIS block in the present invention. Unit cell (1) three dielectric layers (3), (4), (6), four copper layers (2), (7), (8), (9) place It is receiving. Figure 2: RIS, a modular “Lego-like” two-block system with a snap-on / snap-off mechanism. Schematic representation of the system 20 Figure 3: Details of the dimensions of the patch (pattern) structure of a single unit cell (1). Figure 4: Detailed representation of the x region within the patch structure in Figure 3. Figure 5: Detailed representation of the y-region within the patch structure in Figure 3. Figure 6: Via paths in region y within the patch structure in Figure 3. 1 and via route 2) location and details 25 Figure 7: Detailed dimensioning of Via route 2 (35) Figure 8: Detail of the outer ring of Via route 2 (35). Figure 9: Radial stub structure of the lower copper layer (9) of the third layer. detailed dimensions Figure 10: Starting from the top surface (top copper layer (2)) and continuing to the bottom (bottom copper layer 9) 30 Detailed dimensioning of the Eden via road (Figure 7, Figure 3) Figure 11: Fan-shaped stud (Region (z) of surface number (9) of the lower copper layer of Layer III) Image showing the detail of its geometry. Figure 12: Example Continuous Distribution Configuration. (Color coding in Figure 12: White = Diode On, Black = Diode Off) 35 Figure 13: “Amplitude” values ​​of RIS with 0° and 15° orientation ((a) = ON, (b) = OFF, (c) = ON, (d) = OFF 6 Figure 14: Amplitude values ​​of RIS with 30° and 45° orientation (a), (b), (c), (d) 5 Figure 15: “Phase” values ​​of RIS with 0° and 15° orientation (a), (b), (c), (d) Figure 16: “Phase” values ​​of RIS with 30° and 45° orientation (a), (b), (c), (d) Figure 17: Gain values ​​(e) of 15° orientation of 3.7 GHz, 3.75 GHz, 3.8 GHz frequencies. (f), (g) Figure 18: Gain values ​​(e) of 30° orientation of 3.7 GHz, 3.75 GHz, 3.8 GHz frequencies, 10 (f), (g) Figure 19: Gain values ​​(e) of 3.7 GHz, 3.75 GHz, 3.8 GHz frequencies with 45° orientation. (f), (g) Figure 20: Illustration of a modular RIS system containing multiple RIS modules. Figure 21: RIS unit cells (1) on (ON) off (OFF) in the example application 15 Configuration - white color ON, black color OFF Figure 22: Optimization of RIS unit cells (1) created using iterative method signal strength received according to the steps Figure 23: Calculated RIS configuration for open (h) and closed (i) states in the example application. The amplitude of the transmission coefficient (|S21|) with respect to frequency is 20 Reference explanations for Figure 13: (a): Amplitude value of the “ON” state of PIN diodes in 0° orientation. (b): Amplitude value of PIN diodes in "OFF" state at 0° orientation. (c): Amplitude value of the “ON” state of PIN diodes in 15° orientation. (d): The amplitude value of the PIN diodes in the “OFF” state at 15° orientation is 25 Reference explanations for Figure 14: (a): Amplitude value of the “ON” state of PIN diodes in 30° orientation. (b): Amplitude value of PIN diodes in "OFF" state at 30° orientation. (c): Amplitude value of the “ON” state of PIN diodes in 45° orientation. (d): The amplitude value of the PIN diodes in the “OFF” state at 45° orientation is 30 Reference explanations for Figure 15: (a): Phase values ​​of the “ON” state of the PIN diodes in 0° orientation. (b): Phase values ​​of PIN diodes in "OFF" condition with 0° orientation. (c): “ON” state phase values ​​of PIN diodes in 15° orientation (d): The phase values ​​of the PIN diodes in the “OFF” state at 15° orientation are 35 Reference explanations for Figure 16: (a): Phase values ​​of the “ON” state of PIN diodes in 30° orientation. (b): Phase values ​​of PIN diodes in "OFF" state at 30° orientation. 7 (c): The phase values ​​of the PIN diodes in the “ON” state at 45° orientation are 5 (d): Phase values ​​of PIN diodes in "OFF" state at 45° orientation. Reference descriptions of Figures 17, 18 and 19. (e): Gain graphs of the signal from the external source at 3.7 GHz frequencies. (f): Gain graphs of the signal from the external source at 3.75 GHz frequencies. (g): Gain graphs of the signal from the external source at 3.8 GHz frequencies. 10 Reference explanation for Figure 23: (h): RIS calculated based on a transceiver layout in the example application. The amplitude of the transmission coefficient with respect to frequency when the configuration is ON. values ​​(|S21|) (i): When RIS configuration is OFF, transmission according to frequency is 15 amplitude values ​​of the coefficient (|S21|) Explanation of References in Figures 1: Unit cell (Layer 1 - Top “OFF” - black color) The basic electromagnetic unit of the RIS panel (Figure 1) 2: The top copper layer of the first layer is 20 Copper thickness D‑1 ≈ 0.035 mm (35 µm) 3: Middle dielectric layer of the first layer. The thickness of the F4BM265 dielectric (3) is 3 mm (D-2). 4: Top dielectric layer of the second layer. FR-4 has a thickness of 0.5 mm (D‑5) and a dielectric constant εᵣ ≈ 4.4. 25 5: Representation of the unit cell (1) in the “ON” state (Layer I - Top “ON” - white color) 6: Dielectric layer of the third layer: FR-4, 0.5 mm (D-8) thick and dielectric constant εᵣ ≈ 4,4. 7: I. Layer bottom copper layer- (D-3) 8: Layer II, lower copper layer - 30 D‑4 ≈ 0.035 mm (35 µm) – same thickness as (5) and (9) 9: Layer III, sub-layer copper layer It is 0.035 mm (D-9) thick and distributes power and bias signals to all cells of the panel. It accomplishes. 10: Unit cell (1) horizontal width - 41 mm (D-10) 35 11: Unit cell (1) right and left patch length - 41 mm (D-13) 12: Horizontal width of unit cell (1) right and left patch elements - 17.49 mm (D-12) 8 13: Unit cell (1) height - 41mm (D-13) 5 14: Width of the top and bottom slit between the two patches - 3.525 mm (D-14) 15: Horizontal distance from design clearance to left edge - 9 mm (D-15) 16: Design gap diameter - 0.6 mm (D-16) 17: Height of the narrow canal in the middle canal (19) located within the x region - narrow canal Height - 0.78 mm (D-17) - This channel is available for mounting PIN diodes. 10 18: Width of the narrow canal in the middle canal (19) located within the x region - 0.312 mm (D-18) 19: Central channel separating the right and left patches - channel width 0.525 mm (D-19) 20: Horizontal distance from the left edge of Via 1 road (30a) - 14.5 mm (D-20) 21: Vertical distance of Via 1 road (30a) to the lower edge of the patch -0.8 mm (D-21) 21a: The width of the transmission lines belonging to routes 1 and 2 (30a and 35) is 15 22: Vertical distance (right and left) of the patches (14) of the upper and lower slit width- 1.5 mm (D-22) 23: Horizontal length of the transmission line of the lower right micro Via route 2 (35) – 4.15 mm (D-23) 24: Diameter of lower right micro Via pathway 2 (35) - 0.5 mm (D-24) 20 25: Right patch lower outer corner chamfer width - 1 mm (D-25) 26: Right patch lower outer corner chamfer height - 1 mm (D-26) 27: Horizontal distance from the width of the lower crack (14) of the left patch to the Via 1 road (30a) 4,087 mm (D-27) 28: Horizontal distance (right and left) of the patches (14) of the upper and lower slit width - 25 1.5 mm (D-28) 29: Vertical distance of transmission path belonging to via route 2 (35) - 0.85 mm (D-29) 30: Position of Via route 2 (35) to the transmission line - 0.3 mm (D-30) a: Via route 1 31: Vertical distance of via 1 (30a) to the lower edge - 1.95 mm (D-31) 30 32: Inner diameter of via-way 1 (30 a) - 0.3 mm (D-32) 33: Insulating ring opening around via-way 1 (30 a) - prevents short circuit. 34: Vertical distance of the lower edge of Via route 2 - 1.9 mm (D-34) 35: Via route 2 36: Horizontal distance from Via road 1 (30 a) to the left edge - 14.5 mm (D-36) 35 37: Horizontal distance between via road 1 (30 a) and via road 2 - 16 mm (D-37) 38: Horizontal distance from Via road 2 (35) to the right edge 39: The vertical distance of Via route 2 (35) to the lower edge 9 40: Inner conductor via path 2 (35) diameter - inner diameter 0.3mm(D-32) 5 42: Horizontal distance of Via road 2 (35) to the left edge - 14.5 mm (D-42) 44: Width of the outer insulation ring of Via route 2 (35) - 0.7 mm (D-44) 46: Fan angle - 104° (D-46) 47: Fan radius - 8.13 mm (D-47) 48: Distance of DC Bias 1 in region v to the bottom edge - 1.95mm (D48) 10 49: DC Bias 1 - DC control port 1 49 a: DC Bias 2 50: Distance of DC Bias 1 (49) to the right edge -14.5 mm (D-50) 51: Distance of DC Bias 2 (49a) to bottom edge - 1.9 mm (D-51) 52: Distance of DC Bias 2 (49a) to left edge - 10.5 mm (D-52) 15 53: Transmission line width - 0.95 mm (D-53) 54: Transmission line length - 9,295 mm (D-54) 55: The sum of the length of the transmission line (54) and its distance to the bottom edge of the unit cell (1) 10,707 mm (D-55) 56: DC Bias 1's (49) inner diameter - 0.3mm (D56) 20 57: DC Bias 1 outer diameter - 0.5mm (D57) 58: Length connecting the transmission line and the fan - (Figure 9, (z) region 0.101mm (D62)) 59: Angle that the inclined slit surface makes with the transmission line - (Figure 9, region (z)) 109° (D-61) 60: Height of the transmission line from the fan beginning (47) towards the upper edge - 1,069 mm (D-60) 25 x: Showing the range between (15…19) in Figure 3, which has a unit cell (1) structure, and a more detailed drawing of Figure Area 4 (area x) y: Showing the range between (20…30) in Figure 3, which has a unit cell (1) structure, and a more detailed drawing is shown in Figure Area 5 (area y) z: Showing the area between (31…38) in Figure 3 in the unit cell structure and a more detailed drawing is shown in Figure 6 at 30 the region located (Z region) v: Geometric location of DC Bias 2 (v region) Layer I: The unit cell (1) pattern layer (top copper layer (2)), dielectric layer (3) and bottom layer in Figure 1. structure consisting of copper floor (7) II. Layer: Structure consisting of dielectric layer (4) and bottom copper layer (8) 35 III. Layer: Structure consisting of dielectric layer (6) and bottom copper layer (9) Description of the Invention 5 The smart surface (RIS) architectures that are the subject of this invention utilize a passive layer and a low-loss dielectric substrate. and consists of metallic patterns, and the fundamental reflection and phase shift of the incoming electromagnetic wave. and determines the scattering character. The electrical relationship between PIN diodes and these metallic patterns The connections are switched and the upper copper layer of Layer I (2) local impedance D-1, D-2….D-60 By modifying the parameters defined by the dimensioned dimensions, 10 from an external source It can redirect, dampen, or phase-control the incoming signal in a specific or desired direction. It can re-spread in this way. The modular design used in 5G and next-generation communication technology applications in the current invention, Hierarchical and reconfigurable intelligent surface (RIS) system, 15 pins, each containing a PIN diode, preferably in the ixj configuration (i: 1,2,3….8) (j:1,2,3….8). consisting of unit cells (1), at least one first layer positioned one on top of the other and at least one second layer It contains one or more layers. Each of these layers has at least one dielectric and It contains at least one metal layer. This metal layer is preferably copper. In one application of the invention, the first of the layers shall consist of at least one top metal layer and at least one dielectric layer. the first layer consists of at least one sub-metal layer, and the second layer consists of at least one dielectric layer and at least one sub-metal layer 20 It includes. If there are more than two layers in another application of the invention, the first layer shall be at least an upper metal layer, at least one dielectric layer and at least one lower metal layer, second and subsequent layers It contains at least one dielectric layer and at least one substrate metal layer. In another application of the invention, each of the layers shall have at least one top metal layer (2), at least one 25 The dielectric layer contains at least one substrate metal layer. The first of these layers is called layer I. Located in the top metal layer (2), in the first row of the ixj configuration (1x (1…..8)) The unit cells (1) located in the other rows of the said configuration mirror-symmetric structure in the X direction with respect to the cells (1) It is designed. 30 Each RIS module in the present invention can be used both for its own use and for other RIS modules. RIS is a system that uses the power and data it receives to transfer to its modules and provides connectivity with the external system. The system administrator or RIS receives data from the system administrator and transfers it to its own reflective surface card. It includes a Controller Card (CC) that functions as a RIS system element by transferring data. Each RIS module provides phase control by combining PIN diodes (1) in the unit cells. Includes a Reflective Surface Card (RSC). 11 By mechanically and electrically connecting each RIS module to the others, the 5 in the RIS system “Lego-like” snap-on mechanism that allows increasing the number of unit cells (1). It includes. The modular RIS system in the present invention consists of RIS modules. Controller Board (CC) and the Reflective Surface Card (RSC) (block) make up the RIS module. The blocks are ixj In its configuration (i: 1,2,3….8) (j:1,2,3….8) it can contain unit cells (1). 2x2, 4x4, 10 Containing blocks made up of 6x6, 2x4, 2x3, 3x3, 3x4, 5x2, 5x6 or 8x8 unit cells. These systems are examples of different applications of the invention. These configurations are not limited to these examples. is not. In the application of the invention, a 64 unit cell (1) consisting of 8x8 unit cells (1) A block has been formed (Figure 1), and the dimensions of the block structure are given in Table 1 D-6. This In the example application of the present invention, the blocks are combined in a 2x1 format to form 128 unit cells (1) 15 A subunit of the RIS system described in the present invention has been formed and its dimensions are given in Table 1. It is given in D-7. ixj in different applications of the RIS system developed within the scope of the invention. Any number of blocks can be combined without disrupting the configuration. In this context... The invention in question cannot be limited to the examples described here. In an application of the present invention, the RIS module comprises 20 Reflective Surface Cards (RSCs). of the layers (Layers I, II, III), there will be two in Layer I and one each in Layers II and III. In the figure, four separate copper layers (2), (7), (8), (9) and three separate ones, one in each layer. These layer structures include dielectric layers (3), (4), (6). Computer Simulation Software It was designed in the (CST) program

[22] . In one application of the invention, the system has preferred geometric thicknesses of elements such as layers, unit cells, connection channels, etc. and 25 The dimensions are given with the following D references (Table 1: Example application of the invention). Dimensions (D) table). The elements of the system subject to the invention are numbered and sized as given in Table 1. The thickness or dimensions of the elements in the system subject to the present invention cannot be limited. The layered structure, which has at least two layers in the prototype application of the invention, will not be altered. The number of applications of the invention can be reduced or increased as needed. 30 12 D-Reference Dimension (D) D-Reference Dimension (D) D-1 0.035 mm D-34 1.9 mm D-2 3 mm D-35 0.7 mm D-3 0.035 mm D-36 14.5 mm D-4 0.035 mm D-37 16 mm D-5 0.5 mm D-38 10.5mm D-6 320mmx320mm D-39 1.95 mm D-7 320mmx640mm D-40 0.3 mm D-8 0.5 mm D-41 0.5 mm D-9 0.035 mm D-42 14.5 mm D-10 41 mm D-44 0.7 mm D-11 35.5 mm D-46 104° D-12 17.49 mm D-47 8.13 mm D-13 41 mm D-48 1.95 mm D-14 3.525 mm D-49 0.5 mm D-15 9 mm D-50 14.5 mm D-16 0.6 mm D-51 1.9 mm D-17 0.78 mm D-52 10.5 mm D-18 0.312 mm D-53 0.95 mm D-19 0.525 mm D-54 9.295 mm D-20 14.5 mm D-55 10.707 mm D-21 0.8 mm D-56 0.3 mm D-22 1.5 mm D-57 0.5 mm D-23 4.15 mm D-59 14.5 mm D-24 0.5 mm D-58 0.101mm D-25 1 mm D-59 109° D-26 1 mm D-60 1,069mm D-27 4.087mm D-28 1.5 mm D-29 0.85 mm D-30 0.3 mm D-31 1.95 mm D-32 0.3 mm D-33 0.5 mm 13 Layer I of the reconfigurable electromagnetic smart surface design, Unit 5 an upper copper layer (2) consisting of cells (1) middle dielectric layer (3) and lower copper layer (7) It includes. The upper copper layer (2) transmits electromagnetic waves in a software-based manner. They are smart EM surfaces that can change the patterning structure of a single unit cell (1), reference (10), (11), (12), (13), (14) are shown in Figure 3. The reflective surface parameters of the unit cell (1) in Figure 3 are 10 in Figures 4, 5, 6, and 7. It is shown. The top copper layer of the first layer (2) is the electromagnetic of the RIS unit cell (1). It directly determines the waveform routing performance and PIN diode integration. Unit The dimensions of the cell (1) are the total horizontal width (10) and the total vertical height (13) When defined, this area has a patch structure consisting of two patches: a right patch and a left patch. These patches are located. Their length and width are equal. The right and left patch structure is 15 the region y it covers (y) the horizontal width of the right and left patch elements (12) and the two patch elements The width of the lower and upper slits between them (14) shapes the main resonance frequency. In Figure 4, the detail of region x defined in Figure 3 extends from the design gap to its left edge. While the horizontal distance (15) and the design gap diameter (16) ensure signal transfer, the narrow channel (17) vertical width (D-17), height of the narrow channel (18) and the middle channel separating the right and left patch 20 (19) width (D-19) triggering of the PIN diode the RF characteristic of the unit cell (1) It optimizes. In the micro-strip details within the y-region, defined in Figure 3 and detailed in Figure 5. the horizontal distance (20) of via road 1 (30a) to the left edge and the vertical distance to the bottom edge of the patch (21) determines the feed position. Right and left patch 25 designed for matching and impedance matching. vertical distance (22) between the lower and upper slit width (14) of the patches (right and left) The horizontal distance (28) is 1.5 mm. The horizontal length of the transmission line of the lower right micro via route 2 (35) (23), diameter of the lower right micro via 2 (35) (24), position of via 2 (35) to the transmission line (30) and the vertical distance of the transmission path belonging to via path 2 (35) (29) ensures safe DC current supply. It makes it so. 30 Finally, the width of the lower outer corner chamfer of the right patch (25) and the height of the lower outer corner chamfer of the right patch. (26) by damping the unwanted current concentrations at the corners, the reflective surface unit (top copper layer) (2) ensures stable operation. In the present invention, original designs are obtained by calculating the dimensions of all layers (I, II, III). These layered structures have been developed, particularly for 5G and beyond wireless communication systems, to improve coverage. to increase the range, non-line-of-sight (NLoS) signal transmission. It is used to improve and increase energy efficiency [3],

[19] . 14 The design in the present invention is controlled by PIN diode switching elements, 5 The reflection phase of the electromagnetic wave has been made electronically adjustable. This In this way, the reflective surface unit (upper copper surface (2)), electromagnetic from the external source It acts like a programmable array of antennas that redirects the wave in the desired direction [4], [5],

[20] . The electromagnetic behavior of the smart unit cell (1) is expressed by the complex reflection coefficient: 10 𝛤 = ​​𝐴 𝑒(𝑗𝜑) Formula (1) Here A represents the amplitude coefficient and φ represents the reflection phase of the unit cell (1). In the RIS design presented in this invention, control is entirely phase-based, generally assuming a constant amplitude. This is implemented by Di Renzo and his colleagues in the "smart electromagnetic environment". The concept is explained in detail within [3]. Phase gradient on the reflective surface 15 By generating this, the direction of the electromagnetic wave is controlled, and this phenomenon is known as generalized Snell's wave theory. It is expressed by the law: 𝑑𝜑(𝑥) dx = k (s𝑠𝑖𝑛𝜃𝑟 − 𝑠𝑖𝑛𝜃𝑖) Formula (2) Here, k₀ = 2π / λ represents the wave number, θi the angle of incidence, and θr the angle of reflection. This expression represents the upper Programming each unit cell (1) on the copper layer (2) with different phase values ​​20 As a result, it shows that the electromagnetic wave can be directed in the desired direction [5], [6]. The RIS system used in the implementation of the present invention preferably operates in the n78 band. It has a frequency, preferably in the sub-6 GHz band. This frequency range is suitable for both... Widely used for RIS applications due to its low loss and wide coverage advantage. 25 is preferred

[19] . The resonance behavior of the meta surface (upper copper layer (2)) unit cells (1) is approximately as follows: It is expressed as follows: fr ≈ c 2L√𝜀𝑒𝑓𝑓 Formula (3) Here, c represents the speed of light, L the resonator size, and 𝜀𝑒𝑓𝑓 the effective dielectric constant. n78, for example, 30 Since the unit cell (1) dimensions are larger than the wavelength at low frequencies, production The tolerances are more forgiving, and the design behaves more stably. The middle dielectric layer (3) in Layer I used in the design of the present invention is preferably F4BM265 It is a mechanical platform made of material and carrying conductive patterned unit cells (1) In addition, it directly affects electromagnetic performance. Instead of F4BM265, use the duroid FR4, 35 Rogers uses different PCB manufacturing technologies, including but not limited to ceramics, etc. Other materials can also be used. The dielectric constant (𝜀𝑟), loss tangent (𝑡𝑎𝑛𝛿), and substrate thickness determine the resonance frequency and 5 These are the key parameters determining reflection efficiency. Low-loss substrates, in particular, are suitable for RIS. It is critical to improve performance [6],

[12] . In conclusion, the reconfigurable electromagnetic surface is a PIN diode-controlled smart system. When directing electromagnetic waves with surface cells (1), the resonance of dielectric layers It serves as a fundamental structural component that determines its characteristics and efficiency. 10 For calculations of 𝜀𝑟 and 𝑡𝑎𝑛𝛿 for F4BM265 and FR4 materials, a waveguide system was used. Measurements were taken using an Agilent N5230A network analyzer and the Nicholson-Ross-Weir (NRW) method. Calculations were performed using Agilent 85071E Material Measurement software. Software was used

[21] . The sample application of the present invention includes the layer structure I, II, and III shown in Figure 2, comprising 15 layers. A 2x1 block structure (reflective surface board) consisting of 8x8 unit cells has been created. Detailed measurements of the cells (1) in the upper copper layer (2) of the first layer of an 8x8 block. This is shown in Figures 3-8 and Table 1. Located in the first rows of the configuration (1x (1…..8)) in the upper copper layer of the first layer (2) While the unit cells (1) are designed as in Figure 1 to Figure 8, this location (1x (1…..8)) 20 All unit cells other than (in other rows) (1) are in the X plane (See Figure 3 X and Y The axis is positioned by mirroring it (mirror symmetric structure). In this way The framework used to connect the blocks of the RIS system, along with its positioning. The preservation of the via routes within the structure has been ensured. This design, implemented in this way, involves unit cells. (1) No difference occurs in the EM in the phase shifts created by the PIN diode 25 It has been observed that it did not bring about (deterioration). The same rotation process is carried out starting from the top copper layer (2) of the unit cell (1) of Layer I to Layer II. Continuing (extending) to the lower copper layer of Layer III (9), including the layer This has also been applied to via routes (via route 1 and via route 2), and electromagnetically any It did not cause any damage. During the change in the direction of the via roads in these structures, 30 No adverse effects were observed in the phase shifts caused by triggering PIN diodes. In another example application of the present invention, in the unit cells of the existing RIS system On the PIN diodes that are located and control the unit cells, in order to protect the PIN diodes. mm in diameter and a height ranging from 50 microns to 70 microns (e.g., 50,..55…60….65..70 Humiseal 1A33 Comfort Coating material (35 microns) applied by drip method. Its application / dripping does not negatively affect the electromagnetic phase shift. It has been observed that the dripping material is not limited to this material and its chemical structure is polyurethane. Or other transparent (RF-transmitting) materials such as acrylic. 16 In the RIS system presented in the current invention, 5 different “ON / OFF” combinations of the PIN diode are selected. The optimal condition for EM performance is determined by the effect of the global wave on the RIS system. An algorithm was used to calculate the spread effects. The optimum diode configuration determined by the algorithm is written into the CST using VBA. EM analysis was performed using the (Visual Basic for Applications) macro. It has been accomplished. 10 The RIS system in the present invention consists of a planar RIS aperture and phase placed in the XY plane. The antenna's phase reflects the signal coming from an external source located at a specific point p. It is characterized by a global waveform originating from its center and the RIS aperture. It induces a predetermined amplitude and phase distribution on the surface. In the present invention, the RIS system, each of which has its own index i, located at point e and 𝐫𝑖 15 located at point i in space N consists of unit cells (1). Here N is a positive integer. These unit cells (1) are located in the far field of the external source and are approximately planar. It is assumed that the wave is excluded from the analysis. Each unit cell (1) is an external source. When illuminated as EM, a specific phase 𝛿𝑖 is included in the scattered field. It is structured in such a way as to... 20 The field amplitude at a q-space point significantly separated from the RIS system, polarization. A direct formula using a linear summation principle approach based on the interference of harmonics. (4) is presented with:      1 exp most ii i aqjq  Formula (4) 25 Here, the total phase of the wave coming through the i-th unit cell (1) to point q is  0( ) pe eqi iii iq k RR       , and its amplitude is defined as  ia q. 0 2 ck fc wave number where cf represents the center frequency of the RIS operating band and c represents the speed of light. pe iR and eq iR is the range between the external source point p and the i-th unit cell (1) and this unit cell (1) are the distances between the field observation point q and the distances obtained using the dot product operation 30 It is obtained in accordance with Formula (5): 2 , 2pe ppeepe eq eeqqe qi iiiiii iR R           rrrrrrrrrrrr Formula (5) Within the scope of the present invention, the phase distribution matrix ( i ) to be applied to RIS unit cells (1) It varies depending on the targeted electromagnetic wave manipulation. 35 17 The spatial phase delay (SPD) resulting from the propagation of a global wave is 5. phase dispersion applied to eliminate and produce a beam parallel to the axis perpendicular to the array plane. It is presented with formula (6): 0 0 spd pe Formula (6) i ik R    Here, 0 is a relative phase constant. A collimated wave traveling parallel to another wave can be placed along a specific 10-degree path in the direction of the unit vector qr. progressive phase gradient for the purpose of directing in spatial direction The phase distribution formed by adding is defined in Formula (7): 0 pp eq Formula (7) i ik   rr The scattered field is a specific point q in space with defined coordinates. 15 The phase distribution derived by the algorithm is shown by Formula (8). 0 pp eq Formula (8) i ik   rr The RIS system in the present invention is "continuous" which is fully reduced to the unit cell (1) centers. It exhibits high linear performance in phase distributions, as well as at only two phase levels. Even in quantized / discrete phase configurations, a sharp 20 in the targeted spatial coordinate is achieved. It can create a focus of maximum field amplitude. Example continuous distribution configuration is shown in Figure. This is shown in section 12. The following values ​​were used as a basis when creating the example configuration. ( GHzfc 75.3 , m p 8.0r , 0 p ,  p , mq 0.3r , 4q , 0p , 33xN , 25yN ; mPx 041.0 , mPy 041.0 ). The location of via road 1 (30a), detailed in Figure 6, in region y of Figure 3, is shown in the lower 25 The vertical distance to the edge is indicated by (31) and the horizontal distance to the left edge by (36). The location of via road 2 (35), which is located in region y in Figure 3 and detailed in Figure 6, is as follows: The vertical distance to the bottom edge is shown as (34) and the horizontal distance to the right edge as (38). The horizontal distance (37) between the two via roads (30a, 35) is 16mm (D-37). Figure In 7, the vertical distance (39) of via 2 (35) to the lower edge and the horizontal distance (42) to the left edge are 30 While sensitized, the diameter of the inner conductor via 2 (35) (40) determines the electrical properties. Via The horizontal distance (42) of road 1 (30a) to the left edge is 14.5 mm (D-42). Similarly, Figure 8 shows the outer insulating ring diameter (44) of via path 2 (35). Thanks to the use of external insulation in via route 2 (35), the lower copper layer (9) and via route 2 (35) This prevents short circuits. 35 18 The upper dielectric layer of the second layer (4) has a propagation characteristic of electromagnetic waves. It contributes to its regulation. The dielectric constant of the upper dielectric layer (4) and It affects thickness, operating frequency, bandwidth, and phase control performance. The dielectric material in the sample application of the invention is FR4, with a thickness of (D-4) and complex The dielectric constant was calculated using Formula 1, Formula 2, and Formula 3. The calculation results have been incorporated into the RIS design in the existing invention within the CST software. II. 10 The upper dielectric layer (4) of the layer has a lower copper layer (8) underneath it (Figure 1). Starting from the upper copper layer (2) of the unit cell (1) of the first layer, passing through the second layer and the third layer. Detailed via pathways (via pathway 1 and via pathway 2) continuing down to the lower copper layer (9) of the layer The dimensions are given in Figures 6, 7, and 8. Layer III is used to optimize electromagnetic performance. Different 15 operating frequency range by choosing materials with dielectric properties It can be expanded, phase control capacity can be increased, and the electromagnetic properties of the surface can be improved. The behavior can be improved. The dielectric material of the dielectric layer of the III layer (6) It is FR4. The thickness of the dielectric layer (6) is 0.5 mm (D-8). In the lower copper layer (9) of the III layer of the RIS structure, there is a "Radial Stub" 20 Fan-shaped choke structure containing DC power supply and RF choke circuit (46, 47,…54,55) Figure (9) is located. The fan-shaped shock structure (46, 47,…54,55) is located in the upper copper layer (2) in Layer I. While transmitting the DC current required to control the diodes, it also transmits high-frequency RF signals. The aim is to prevent leakage into the control lines. Fan structure, fan angle (46) and fan segment 25 (47) by creating a virtual short circuit (ground) for RF signals in a wide frequency band. It provides insulation. Vertical transmission line length (54) and transmission line width (53), impedance It is designed according to the quarter-wavelength principle to ensure compatibility. Below DC Bias 2 (49a) distance to the edge (51), distance to the left edge (52) and transmission line width (53), lines It prevents unwanted signal coupling (interference) between them. The DC control signal passes through the upper copper 30 of Layer I. DC Bias 1 (49) descends from via path 2 (35) in the (2) layer to the lower copper layer (9) of the III layer. The distance of DC Bias 1 (49) located in the lower copper layer of the III layer to the lower edge is taken. (48) is 1.95 mm (D-48), the distance of DC Bias 2 (49a) to the left edge is (52) 10.5 mm (D-52) It is filtered to feed the diodes in such a way. The detailed v region (DC Bias 1) is shown in Figure 9. The drawing is given in detail in Figure 10 with references 56 (D-56) and 57 (D-57). Also 35 The z-region in Figure 9 is detailed in Figure 11 with references 58 (D-58), 59 (D-59), and 60 (D-60). It has been shown. 19 The lower copper layer (9) dielectric layer (6) PIN 5 located at the bottom of the III. Layer of the block structure It includes the conduction paths and control network that enable the driving of the diodes. By the phase matrix The generated control signals are transmitted to the relevant cells (1) through this layer. Layer also serves as a link between control electronics and the reconfigurable surface. He sees. The RIS module, consisting of a Controller Board (CB) and a Reflective Surface Board (RSB), is the 10th component of the RIS system. It is a fundamental component. It also comprises the three-layer RIS block structure of the Reflective Surface Card (RSC). It constitutes. The present invention, an example of RIS, was developed after work with CST Studio Suite. The graphs related to the application are presented in Figures 13-19. In the example application in the present invention within the CST Microwave Studio Suite environment, the RIS system is 15. Plane wave excitation to represent the incident electromagnetic wave. The amplitude and phase of the reflection coefficient were used for different operating conditions in the simulations. The changes were analyzed. The amplitude of the reflection coefficient reflects the incoming electromagnetic field of the structure. The phase component shows the extent to which energy is reflected, while the phase component shows the phase of the reflected wave. It was evaluated in order to determine the delay. In this way, the designed structure was 20 Characterized by electromagnetic wave control, phase steering capability, and reflection performance. It has been done. The best results obtained by configuring the patterns and PIN diodes shown in Figure 21. The results of the amplitude and phase values ​​for 0°, 15°, 30°, and 45° orientations are shown in Figures 13-16. This is shown in Figure 13 25, regarding the 3.7 GHz, 3.75 GHz, and 3.8 GHz frequencies when the PIN diodes are in the “OFF” state. and the reflection amplitude values ​​in 14 varied between an average of -0.5 dB and -0.8 dB, while When set to “ON”, it increases by an average of -0.2 dB. (See Figures 15 and 16) Based on the displayed phase values, the PIN is in a 15° orientation and in the 3.7-3.8 GHz frequency range. the phase difference between the “ON” and “OFF” states of the diode has increased significantly It is observed that there is approximately a 160° phase at 3.7 GHz, a 175° phase at 3.75 GHz, and a 185° phase at 3.8 GHz. A difference of approximately 180° in phase difference is obtained. In particular, the phase difference is quite close to 180° in the 3.75-3.8 GHz range. When looking at the gain curves of the designed reconfigurable cell (1), It appears to be the most suitable performance for switching. PIN for 30° and 45° approach angles. It is observed that the phase curve decreases as the frequency increases in both the "ON" and "OFF" states of the diode. Specifically, maintaining a phase difference of approximately 180° for both incidence angles in the 3.7-3.8 GHz range is crucial. The proposed reconfigurable unit cell (1) stable phase 5 at oblique angles of incidence. It shows that it can provide switching and is suitable for switching. When we examine the gain curves, we see that in electromagnetic analyses, the far field incident on the structure... To represent wave propagation, plane waves are used in the CST Microwave Studio environment. Plane wave excitation was used. In the plane wave approximation, the electric and magnetic field components are used. electromagnetic waves propagating along fixed phase planes in space and having a single direction of incidence. It is modeled as a wave. This method is particularly useful in metasurface, RIS, and electromagnetic fields. Commonly used in examining the performance of absorber structures under different angles of incidence. It is used. In the simulation model of the present invention, the RIS system is positioned at a specific angle. "Plane Wave excitation" is used to generate an electromagnetic wave from an external source. It is defined. The direction of incidence of the incoming wave, its polarization (TE / TM or E-field direction) and 15 The frequency range is defined within the CST to determine the structure's reflection, transmittance, and scattering. Its characteristics have been calculated. Thanks to the plane wave boundary conditions, it can be remotely simulated in a real environment. The approach of a planar electromagnetic wave coming from a distance of 3.7 GHz and 3.75 GHz has been simulated. At 3.8 GHz and 3.8 GHz frequencies, the beam direction angles were oriented and their gains were adjusted. It is observed to be above 12.5 dB. 20 The present invention is designed to operate in the 5G n78 frequency band and to increase signal coverage. A hierarchical system developed to enhance and direct beamforming. It is a modular, reconfigurable smart surface system. (See Figure 20) The sub-components of the RIS system shown are one or more of the components detailed in the diagram below. It can consist of multiple identical RIS modules. The RIS system, beam steering 25 Depending on the scenario and function, varying numbers of RIS modules can be used physically. It can be configured as follows: RIS modules are plug-and-play (like Lego) from their physical location in the RIS system. Thanks to its infrastructure (similar to), it can be individually separated and modified. Furthermore, each RIS module... It can also be operated as a standalone RIS system. 21 Schematic: Subcomponents of the RIS module in the present invention. The RIS module, which is the building block of the system architecture that is the subject of the invention, enables the system to have a plug-and-play structure. and can be combined side-by-side (like Lego) to create a smart surface of any desired size. These are the basic hardware panels that enable this. A single RIS module can support multiple RIS 10 modules. Consisting of multiple RIS modules connected via a daisy-chain topology up to the module level. A RIS system can be established. RIS modules are each of the components in the RIS system that connect to the outside world. Depending on the connection of the RIS module's controller card (CC), the RIS system administrator (master) or RIS can be used with system element (slave) roles. The RIS module that connects to the outside world is the RIS module itself. It is run in the role of system administrator. The other RIS modules of the RIS system are RIS system elements 15. It is run by connecting to the RIS system administrator in its role. It selects the role / address it holds. The RIS module allows for role selection and hardware addressing via its interface. The controller card (CC) and the reflective surface card formed by the three-layered structure given in Figure 2. It consists of two main hardware components: (YYK). These two components are physically It forms interchangeable RIS modules by combining them into a single mechanism. Both itself and 20 It uses the power and data it receives both for its own use and to transfer to other RIS modules. The Controller Card (CC) provides PIN diode control for the reflective surface card (RSC).  KK, includes power input interface, power distribution unit, power converters, central processing unit. unit, external communication interface, internal power / communication interface, and role / address It has a selection interface. 25 22 - The power input interface provides power to the RIS module and system from the outside world, and these 5 It is a physical connector used to transfer power to the power distribution unit. - Power distribution unit, its electrical protection elements, power conversion using elements and energy transmission paths, it is located in the RIS module and connected It is responsible for providing power to the other RIS modules located there. - Power converters reduce noise transmitted by the power distribution unit by 10 The purified electrical power is needed by the other components located in the RIS module. converting them to lower power levels and supplying power to these components is responsible. - Role / address selection interface, role selection on the RIS module (RIS system) (by selecting the administrator or RIS system element) and hardware addressing 15 physical inputs that enable electronic switching It is responsible for bringing about this transformation.  The RIS system administrator, in contact with an external system (that wants to control the RIS system) RIS provides the connection to the system. The RIS system administrator connects to the system from outside the system. It receives data from other RIS systems within the RIS system. He distributes it to his employees.  The RIS system element processes the data it receives from the RIS system administrator. It transfers the reflective surface to the card. - Central processing unit, its processor, hardware interfaces and using high-speed data buses, the RIS module components in which it is located 25 having the ability to control simultaneously (synchronously) Together, using the external communication interface, the RIS module communicates with the outside world. Communication with (computer, network controller or base station), within the system other RIS systems located within the RIS system can be connected using the power / communication interface. Communication with modules, directing to the desired reflection angle or beam direction 30 Storing phase matrices calculated according to the scenario and transferring this data. It is responsible for converting and transmitting the signals into suitable digital signals. - External communication interface, RIS module in the role of RIS system administrator. when used, it can connect with devices outside the system, either wired or wirelessly. It includes components that enable data communication. 35 - The system's power / communication interface is the RIS module's RIS system administrator. when used in its role, the RIS system element role within the system 23 5 The electrical power and configuration data that the modules will need is responsible for providing. - The power / data transfer connector transmits electrical power from the power distribution unit. and configuration data located on the central processing unit side to the YYK It is responsible for ensuring its physical transfer.  YYK, with reflective surface unit (upper copper layer (2)) and data conversion unit 10 It contains. YYK equipment, the reflective surface unit (upper copper layer (2)) n78 Maximizing electromagnetic performance in the band, data conversion In order to enable data exchange with the unit and to establish a connection with the KK, four It is designed with a special asymmetric arrangement of metal layers and three dielectric layers. The signal background an electrical barrier between the RF signal and the DC control signal that prevents leakage to the surface. Includes intermediate layers that provide isolation (RF choke / bias line designs). Reflective. surface unit / top copper layer (2), directly with radio waves from external source PIN that enables interacting reflection patterns (patch / resonator) and phase transition. It includes diodes. PIN diodes are controlled by a data conversion unit. The invention is a A RIS block in the application consists of a total of 64 units arranged in an 8x8 matrix layout. It consists of cells (1). - The data conversion unit is where digital control signals are received, communication with the control system is established, and connectors that enable power transmission, reflective surface unit (upper copper layer) (2)) copper where integrated circuits and PIN diode supply paths will be located (9). Data conversion unit, serial or parallel phase control from KK 25 receives the commands, decodes these commands, and directly returns them to itself. It is the intermediate control unit that electrically drives the connected reflective surface unit (2). - The reflective surface unit is a unit cell (1) design located in a RIS module. It is a structure that includes PIN diodes. The RIS system in the present invention consists of interconnectable RIS modules and 30 It is structured hierarchically, along with its related sub-units. Physically... Thanks to its scalable architecture, the control signals of hundreds of reflective unit cells (1) can be controlled by a single unit. Instead of controlling it with physical hardware, it has enabled control through a modular structure. This reduces design complexity and minimizes electromagnetic interference (crosstalk) between signals. This has been prevented and the system's response time (latency) has been minimized. 35 The physical dimensions and period of each unit cell (1) correspond to the wavelength of the n78 band. While not limiting the scope of the invention, it is preferably determined according to the dimension values ​​in Table 1. To change the phase of the signal coming from the external source, a unit cell (1) is integrated into each unit cell. 24 A PIN diode is present. RIS 5 is activated according to the command from the user controlling the RIS system. The RIS module, which operates in the system administrator role, and the others, which operate in each RIS system element role. Data transfer to RIS modules is performed using the RIS system's internal power / communication interface. Each RIS module provides a reflector via a PIN diode driver circuit in the data conversion unit. positive or negative of the surface unit (upper copper layer of the I Layer (2)) to the corresponding unit cell (1). It applies a DC supply (bias) voltage. 10  In the ON state, the PIN diode conducts, equivalent to the unit cell (1). The capacitance / inductance value changes, and the reflected signal takes on a specific phase angle.  In the OFF state, the PIN diode cuts off and the reflected signal turns ON. It would have a phase exactly 180° different from that. In this way, hundreds or 15 on the reflective surface unit (upper copper layer of Layer I (2)) Each of the thousands (500, 600, 700….1000…2000….) unit cells (1) is independently 0° or by setting it to 180° (1-bit phase resolution), the scattered particles hitting the surface Electromagnetic waves can be artificially focused towards a desired receiver and coverage. The gaps in the area can be successfully filled. Plug-and-play functionality in the RIS system architecture. Thanks to this feature, in the event of a malfunction in the field, only the faulty part (20) is affected instead of the entire system. Replacing the RIS module is sufficient. The RIS system, which is the subject of the present invention, operates as follows: -The signal from the external source is reflected by the unit cells (1) (S100) - The phase of the signal reflected from the unit cells (1) will beam in the direction of the user. The matrix is ​​calculated (S200) 25 - The calculated phase matrix will create a phase difference of 0 or 180 degrees via PIN diodes. Unit cells are configured as shown (S300) - This configuration increases the signal strength received by the user (S400) In this example application of the present invention, we will demonstrate performance improvements of the RIS system. For this purpose, two RIS 30s were created, one acting as a RIS system administrator and the other as a RIS system engineer. The module (2x1) was used. Performance measurement setup, manufactured RIS system, directional antennas. and consists of a vector network analyzer (VNA). The invention In this application, the directional antennas of the external source and the user are positioned 1 meter away from the RIS system, respectively. and are positioned 2 meters away, with RIS angles of 0° and 20° respectively relative to the surface normal. They are positioned at angles. 35 In the first step of the working method of the RIS system in the example application in the present invention, the external 2x1 RIS module (16x8) that enables the signal from the source to be focused towards the user. Determining the placement of the phase shift configuration of the reflective RIS unit cells (1). The iterative method

[10] was applied for. In Figure 21, 5 obtained in the application of the present invention. Phase shift configuration of RIS unit cells (1) is indicated by white and black colors. The unit cells (1) are shown with a 180° phase difference between them. In Figure 22, It shows the signal strength measured by the user throughout the iterations. (Figure 22) As can be seen, the signal strength measured by the user is approximately 24 decibels to the full scale. Starting from a level of approximately 43 dBFS (decibels relative to full scale - dBFS), 10 This is achieved through the example application in the present invention for external resource and user placement. The RIS system achieved a performance improvement of approximately 19 dB as a result of phase shift optimization. Improvement has been achieved. The RIS system in the sample application of the present invention includes different frequency bands, specifically the n78 frequency band. The performance at the frequencies is due to the RIS system for the given layout. Forward voltage gain is observed using a VNA device for the purpose of observing reflections. (S21) has been verified by measurement. Figure 23 shows S21 for frequencies between 3.3 GHz and 4 GHz. It shows the amplitude values ​​of the parameter. Example application of the present invention. Within this scope, as can be seen in Figure 22, the calculated RIS system phase shift Implementing this configuration resulted in an improvement of more than 15 dB in S21 amplitude values. This is provided; however, RIS performance decreases at lower frequencies. The level of performance improvement depends on the outsourcing and user deployment, and varies. It should be noted that installations may vary. Based on this information, a wide variety of applications related to the RIS system, which is the subject of this invention, are possible. It is possible to develop it further, and the invention can be further developed with the examples or dimensions described herein. 25 It cannot be restricted. How the invention can be applied to industry. This invention has implications for the telecommunications industry, particularly for operators deploying 5G and the future 6G. They are capable of being directly integrated into commercial networks. On building facades, 30 for industrial use to illuminate blind spots in tunnels or indoor / outdoor spaces. It is manufacturable and applicable. It can also be used in private 5G networks and smart factories. (Smart Factory) aims to eliminate blind spots in metal-dense environments and to provide autonomous mobile capabilities. wall / ceiling mounted to ensure uninterrupted communication of AGV / AMR robots This can be implemented by ensuring that RIS modules are interchangeable and Thanks to its modular design, it reduces mass production costs in industry, while 35 In case of hardware failures that may occur in the field, only the affected module will be damaged, not the entire panel. değiştirilmesiyle yüksek bakım kolaylığı sağlar. 26 REFERANSLAR 5 [1] Q. Wu and R. Zhang, “Towards Smart and Reconfigurable Environment: Intelligent Reflecting Surface Aided Wireless Network,” IEEE Communications Magazine, vol. 58, no. 1, pp. 106–112, 2020. [2] E. Basar, M. Di Renzo, J. de Rosny, M. Debbah, M.-S. Alouini and R. Zhang, “Wireless Communications Through Reconfigurable Intelligent Surfaces,” IEEE Access, vol. 7, pp. 10 116753–116773, 2019. [3] M. Di Renzo et al., “Smart Radio Environments Empowered by Reconfigurable Intelligent Surfaces: How It Works, State of Research, and The Road Ahead,” IEEE Journal on Selected Areas in Communications, vol. 38, no. 11, pp. 2450–2525, 2020. [4] S. Abeywickrama, R. Zhang, Q. Wu and C. Yuen, “Intelligent Reflecting Surface: Practical 15 Phase Shift Model and Beamforming Optimization,” IEEE Transactions on Communications, vol. 68, no. 9, pp. 5849–5863, 2020. [5] C. Huang, A. Zappone, G. C. Alexandropoulos, M. Debbah and C. Yuen, “Reconfigurable Intelligent Surfaces for Energy Efficiency in Wireless Communication,” IEEE Transactions on Wireless Communications, vol. 18, no. 8, pp. 4157–4170, 2019. 20 [6] N. Yu and F. Capasso, “Flat Optics with Designer Metasurfaces,” Nature Materials, vol. 13, pp. 139–150, 2014. [7] G. Oliveri, D. H. Werner and A. Massa, “Reconfigurable Electromagnetic Architectures Based on Metasurfaces and Metamaterials,” Proceedings of the IEEE, vol. 103, no. 7, pp. 1034– 1056, 2015. 25 [8] Q. Ma and T. J. Cui, “Information Metamaterials: Bridging the Physical World and Digital World,” PhotoniX, vol. 1, no. 1, 2020. [9] J. Yang, Y. Zhang, X. Wang and Q. Cheng, “Programmable Metasurfaces: State of the Art and Prospects,” Advanced Optical Materials, vol. 11, 2023.

[10] F. Liu, Y. Cui, C. Masouros, J. Xu, T. X. Han, Y. C. Eldar and S. Buzzi, “Integrated 30 Sensing and Communications: Towards Dual-Functional Wireless Networks for 6G and Beyond,” IEEE Journal on Selected Areas in Communications, vol. 40, no. 6, pp. 1728–1767, 2022.

[11] A. Araghi et al., “Reconfigurable Intelligent Surface (RIS) in the Sub-6 GHz Band: Design, Implementation, and Real-World Demonstration,” IEEE Access, vol. 10, pp. 2646–2655, 2022. 35

[12] R. Fara, P. Ratajczak, D.-T. Phan-Huy, A. Ourir, M. Di Renzo and J. de Rosny, “A Prototype of Reconfigurable Intelligent Surface with Continuous Control of the Reflection Phase,” IEEE Wireless Communications, vol. 29, no. 1, pp. 70–77, 2022. 27

[13] G. C. Trichopoulos et al., “Design and Evaluation of Reconfigurable Intelligent Surfaces 5 in Real-World Environment,” IEEE Open Journal of the Communications Society, vol. 3, pp. 462–474, 2022.

[14] J. Rains et al., “High-Resolution Programmable Scattering for Wireless Coverage Enhancement: An Indoor Field Trial Campaign,” IEEE Transactions on Antennas and Propagation, vol. 71, no. 1, pp. 518–530, 2023. 10

[15] Y. Yin et al., “Design of a 2-Bit Dual-Polarized Reconfigurable Reflectarray with High Aperture Efficiency,” IEEE Transactions on Antennas and Propagation, vol. 72, no. 1, 2024.

[16] L. Zhu et al., “Dual Linearly Polarized 2-Bit Programmable Metasurface with High Cross- Polarization Discrimination,” IEEE Transactions on Antennas and Propagation, vol. 72, no. 2, pp. 1510–1520, 2024. 15

[17] S. Kayraklik, I. Yildirim, I. Hokelek, Y. Gevez, E. Basar and A. Gorcin, “Indoor Measurements for RIS-Aided Communication: Practical Phase Shift Optimization, Coverage Enhancement, and Physical Layer Security,” IEEE Open Journal of the Communications Society, vol. 5, pp. 1243–1255, 2024.

[18] C.-K. Wen, L.-S. Tsai, A. Shojaeifard, P.-K. Liao, K.-K. Wong and C.-B. Chae, “Shaping 20 a Smarter Electromagnetic Landscape: IAB, NCR, and RIS in 5G Standard and Future 6G,” IEEE Communications Standards Magazine, vol. 8, no. 1, pp. 72–78, 2024.

[19] M. V. Katwe et al., “An Overview of Intelligent Meta-Surfaces for 6G and Beyond: Opportunities, Trends, and Challenges,” IEEE Communications Standards Magazine, vol. 8, no. 4, pp. 62–69, 2024. 25

[20] MADP-000907-14020P

[21] Technical Support: 85071E Materials Measurement Software [Obsolete] | Keysight

[22] CST Studio Suite | SIMULIA - Dassault Systèmes

Claims

28 REQUIREMENTS 5 1. A modular, hierarchical system used in 5G and next-generation communication technology applications. and its feature is that it is a reconfigurable intelligent surface (RIS) system.  Preferably in configuration ixj (i: 1, 2, 3….8) (j:1, each containing a PIN diode, 2, 3….8) unit cells (1) consisting of at least two layers positioned one on top of the other and the bet in the passing layers (I, II) at least one top metal layer (2) and at least one dielectric layer (3) 10 found, only in the upper metal layer of Layer I, (2) the first of the ixj configuration unit cells (1) located in (1x (1…..8)) during the said configuration mirrored structure in the X direction with respect to the unit cells (1) in other rows as designed, - the power it receives, both for its own use and for transferring to other RIS modules, is 15 and the RIS system administrator or RIS that uses the data and provides the connection with the external system. The RIS system transfers the data it receives from the system administrator to its own reflective surface card. a Controller Card (CC) and working in the role of an employee - A Reflector that provides phase control by combining PIN diodes (1) in the unit cells. Surface Card (SBC) 20 containing at least one RIS module,  By mechanically and electrically connecting each RIS module to each other, RIS “Lego-like” snap-togethers that enable the increase of the number of unit cells (1) in the system. mechanism, It is characterized by its inclusion. 25 2. The system according to claim 1 is characterized by having at least one upper metal layer (2), at least one dielectric layer It contains a layer (3) and at least one sub-metal layer (9).

3. It is a system according to claims 1 and 2, and its characteristic feature is that the metal layer is copper.

4. According to claim 1, the system is characterized by three layers positioned one on top of the other, and these layers... The first one consists of a substrate metal layer, a dielectric layer and a substrate metal layer, the second and third one a 30 It consists of a dielectric layer and a metal layer. 29 5. The method of implementing a system like the one in Claim 1, and its characteristic is unit 5 in the RIS system. drop size on PIN diodes located in cells (1) and controlling unit cells (1) with a diameter of mm and a height ranging from 50µm to 70µm, its chemical structure is polyurethane or This is a process of applying an RF-transmitting acrylic material by dripping it onto the surface.

6. This is an implementation method for a system like the one in Claim 1, characterized by the fact that the RIS modules are exposed to the outside world. RIS system 10 according to the connection of each connected RIS module to the Controller Card (CC). It is used as either a master or a slave in the RIS system.

7. It is a system like the one in Claim 1, and its feature is that the unit cells (1) are configured as 8x8. by forming a block containing 64 unit cells (1) and this block is in the form of 2x1 It consists of a dual RIS block containing a total of 128 unit cells when combined.

Images