Computational lithography simulation using linear-fading-aware source-mask optimization
TW202643979APending Publication Date: 2026-11-01ASML NETHERLANDS BV
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Patent Information
- Application Number
- TW114149565
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2024-12-23
- Filing Date
- 2025-12-17
- Publication Date
- 2026-11-01
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Abstract
A non-transitory computer-readable medium stores a set of instructions that is executable by at least one processor of an apparatus to cause the apparatus to perform operations for optimizing an illumination source and mask used in a lithography process. The operations include obtaining a pupil profile. The operations also include simulating the lithography process using the pupil profile to generate predictions resulting from the lithography process. The operations also include calculating a cost function based on the predictions. The cost function includes a linear fading effect term that is indicative of a linear fading effect on the predictions. The operations also include adjusting the pupil profile based on the linear fading effect term.
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