Semiconductor light development evolution determination method and device, equipment and storage medium

Abstract

The invention belongs to the technical field of semiconductor manufacturing, and provides a semiconductor light development evolution determination method and device, equipment and a storage medium. The method comprises the following steps: determining a calculation region for simulation light development according to input parameters of a photoresist region and a mask region of a 3D semiconductor device structure, and determining an initial value # imgabs0 # of a level set equation; determining the evolution speed of the photoresist surface based on the input parameters; obtaining a discrete format of the level set equation; solving the discrete format of the level set equation based on the initial value # imgabs1 # of the level set equation and the evolution speed, and obtaining a three-dimensional discrete data field in the calculation area; the light-developed surface area is extracted when the emulation time is reached using a traveling standing method. The level set equation is introduced to simulate and determine the evolution surface after the light development reaches the simulation time, so that the problem that the development condition can only be determined by putting into actual production at present is solved, and the development of a subsequent photoetching process is facilitated.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing technology, and in particular to a method, device, equipment and storage medium for determining semiconductor optical development evolution. Background Art

[0002] The photolithography process is a crucial step in the manufacture of integrated circuits. It accurately transfers the designed circuit pattern to the surface of the semiconductor wafer through a series of complex steps, including coating photoresist, exposure, and development. After the wafer is aligned and exposed, the pattern of the device or circuit is recorded on the photoresist in the form of exposed and unexposed areas. The pattern is developed by chemically decomposing the unpolymerized photoresist. The development technology is designed to copy the exact mask pattern onto the photoresist.

[0003] The problem with a poor development process is insufficient development, which can result in incorrect opening dimensions or recessed sides of the opening. In some cases, the development is not deep enough and a layer of photoresist is left inside the opening. Sometimes there is also the problem of overdevelopment, which removes too much photoresist from the edges or surfaces of the pattern. Maintaining a well-shaped opening is a special challenge when maintaining a consistent diameter for high aspect ratio plugged holes and cleaning difficulties caused by the difficulty of liquid entry when cleaning deep holes.

[0004] Currently, the development process needs to be put into actual production to determine the actual development conditions, and there is a lack of effective prediction of the development process. The ideal situation for the photolithography process is that the development result is the pattern after exposure, but the actual situation is often quite different. Summary of the invention

[0005] In view of the defects in the prior art, the present invention provides a method, device, equipment and storage medium for determining semiconductor photodevelopment evolution to solve the current problem of lack of effective prediction of development process.

[0006] In a first aspect, the present invention provides a method for determining semiconductor photodevelopment evolution, comprising: According to the input parameters of the photoresist area and mask area of ​​the 3D semiconductor device structure, the calculation area of ​​the simulated light development is determined, and the initial value of the level set equation is determined ; determining an evolution rate of the photoresist surface based on the input parameters; Get the discretized form of the level set equation; Based on the initial value of the level set equation and the evolution speed to solve the discrete format of the level set equation to obtain a three-dimensional discrete data field in the calculation area; The light-developed surface area up to the simulation time is extracted using the marching cube method.

[0007] Optionally, the evolution speed of the photoresist surface is determined according to the following formula: ; Among them, a, b, c, and d are input parameters. a and d must be greater than 0. a is the factor affecting the reaction speed of the photoresist and the developer in the horizontal direction; b is the factor affecting the uniformity of the reaction of the photoresist and the developer in the vertical direction; c is the factor affecting the uniformity of the reaction of the photoresist and the developer in the horizontal direction; d is the factor affecting the reaction speed of the photoresist and the developer in the vertical direction; variable , is the center point of the photoresist area Axis and Axis coordinates.

[0008] Optionally, the level set equation satisfy , in is the surface evolution velocity, and the velocity field The normal and tangent vectors along the evolving surface are decomposed into , in , are the normal vector and tangent vector of the evolving surface, , The evolution speed normal and tangential components along the evolving surface; Substituting this expression into the level set equation, we get: ; The calculation formula of the evolving surface normal vector is: , Substituting the expression of the normal vector into the level set equation, we get: ; In the light development simulation, the photoresist surface evolution rate formula is Substitution .

[0009] Optionally, the obtaining of a discrete format of the level set equation includes: According to the preset discrete precision, the discrete format of the level set equation is obtained based on an approximation format associated with the preset progress in a finite difference method.

[0010] Optionally, the approximation format associated with the preset discrete precision in the finite difference method includes: The approximation formats of time derivatives include the first-order accurate forward Euler format, the second-order TVD Runge-Kutta format, and the third-order TVD Runge-Kutta format; The approximation schemes for spatial derivatives include the first-order upwind scheme, the second-order Runge-Kutta scheme, the second-order Hamilton-Jacobi ENO scheme, the third-order Hamilton-Jacobi ENO scheme, and the fifth-order Hamilton-Jacobi WENO scheme.

[0011] Optionally, the initial value based on the level set equation and the evolution speed to solve the discrete format of the level set equation to obtain a three-dimensional discrete data field in the calculation area, including: According to a preset discrete precision, a discrete format of the level set equation is obtained based on an approximation format associated with the preset progress in a finite difference method; For the Cartesian grid of the calculation area, at each time layer, a sparse level set region method is used to screen out grid points that meet preset conditions; Solve for grid points that meet preset conditions Discrete values; The time layer is advanced until the simulation time is reached, forming a three-dimensional discrete data field.

[0012] Optionally, the step of extracting the light-developed surface area when the simulation time is reached by using the marching cube method comprises: The marching cubic method is used to extract isosurfaces for the three-dimensional discrete data field to obtain a plurality of triangular facets; the triangular facets form a light-developed surface when the simulation time is reached.

[0013] In a second aspect, the present invention provides a semiconductor light development evolution determination device, comprising: The region determination module is used to determine the calculation region of the simulated light development and the initial value of the level set equation according to the input parameters of the photoresist region and the mask region of the 3D semiconductor device structure. ; A speed determination module, for determining the evolution speed of the photoresist surface based on the input parameters; Discrete acquisition module, used to obtain the discrete format of the level set equation; Solver module for initial value of the level set equation based on and the evolution speed to solve the discrete format of the level set equation to obtain a three-dimensional discrete data field in the calculation area; Extraction module for extracting the light-developed surface area up to simulation time using the marching cube method.

[0014] Optionally, in the speed determination module, the evolution speed of the photoresist surface is determined according to the following formula: ; Among them, a, b, c, and d are input parameters. a and d must be greater than 0. a is the factor affecting the reaction speed of the photoresist and the developer in the horizontal direction; b is the factor affecting the uniformity of the reaction of the photoresist and the developer in the vertical direction; c is the factor affecting the uniformity of the reaction of the photoresist and the developer in the horizontal direction; d is the factor affecting the reaction speed of the photoresist and the developer in the vertical direction; variable , is the center point of the photoresist area Axis and Axis coordinates.

[0015] Optionally, in the discrete acquisition module, the level set equation satisfy , in is the surface evolution velocity, and the velocity field The normal and tangent vectors along the evolving surface are decomposed into , in , are the normal vector and tangent vector of the evolving surface, , The evolution speed normal and tangential components along the evolving surface; Substituting this expression into the level set equation, we get: ; The calculation formula of the evolving surface normal vector is: , Substituting the expression of the normal vector into the level set equation, we get: ; In the light development simulation, the photoresist surface evolution rate formula is Substitution .

[0016] Optionally, the discrete acquisition module is specifically used to: According to the preset discrete precision, the discrete format of the level set equation is obtained based on an approximation format associated with the preset progress in a finite difference method.

[0017] Optionally, in the discrete acquisition module, the approximation format associated with the preset discrete precision in the finite difference method includes: The approximation formats of time derivatives include the first-order accurate forward Euler format, the second-order TVD Runge-Kutta format, and the third-order TVD Runge-Kutta format; The approximation schemes for spatial derivatives include the first-order upwind scheme, the second-order Runge-Kutta scheme, the second-order Hamilton-Jacobi ENO scheme, the third-order Hamilton-Jacobi ENO scheme, and the fifth-order Hamilton-Jacobi WENO scheme.

[0018] Optionally, the solution module is specifically used to: For the Cartesian grid of the calculation area, at each time layer, a sparse level set region method is used to screen out grid points that meet preset conditions; Solve for grid points that meet preset conditions Discrete values; The time layer is advanced until the simulation time is reached, forming a three-dimensional discrete data field.

[0019] Optionally, the extraction module is specifically used to: The marching cubic method is used to extract isosurfaces for the three-dimensional discrete data field to obtain a plurality of triangular facets; the triangular facets form a light-developed surface when the simulation time is reached.

[0020] In a third aspect, an embodiment of the present invention provides an electronic device, comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor implements the steps of any of the above methods when executing the computer program.

[0021] In a fourth aspect, an embodiment of the present invention provides a computer-readable storage medium having computer program instructions stored thereon, which implement the steps of any of the above methods when executed by a processor.

[0022] By adopting the above technical solution, the present application has the following beneficial effects: (1) The present invention can predict the photodevelopment evolution surface brought by the photoresist area and the mask area through the level set equation, which is convenient for the progress of subsequent photolithography process; (2) The present invention can determine the light development surface according to the preset discrete precision association, and achieve the matching of calculation precision and calculation efficiency according to the requirements; (3) The present invention only tracks and calculates the grid points near the photodevelopment evolution surface, which has a fast calculation speed and occupies less memory. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] In order to more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the following is a brief introduction to the drawings required for the specific embodiments or the description of the prior art. In all the drawings, similar elements or parts are generally identified by similar reference numerals. In the drawings, the elements or parts are not necessarily drawn according to the actual scale.

[0024] Figure 1 A flow chart of a method for determining semiconductor photodevelopment evolution provided by an embodiment of the present invention is shown; Figure 2 A flowchart of step S4 provided in an embodiment of the present invention is shown; Figure 3 A structural block diagram of determining semiconductor light development evolution provided by an embodiment of the present invention is shown; Figure 4 A structural block diagram of an electronic device provided by an embodiment of the present invention is shown. DETAILED DESCRIPTION

[0025] The following embodiments of the technical solution of the present invention are described in detail in conjunction with the accompanying drawings. The following embodiments are only used to more clearly illustrate the technical solution of the present invention, and are therefore only used as examples, and cannot be used to limit the protection scope of the present invention. It should be noted that, unless otherwise specified, the technical terms or scientific terms used in this application should have the common meanings understood by those skilled in the art to which the present invention belongs.

[0026] like Figure 1 As shown, this embodiment provides a method for determining semiconductor photodevelopment evolution, comprising: S1. According to the parameters of the photoresist area and mask area of ​​the 3D semiconductor device structure, determine the calculation area of ​​the simulated light development and determine the initial value of the level set equation .

[0027] Photodevelopment is the process in which the exposed photoresist surface reacts with the developer over a period of time, which is actually the process in which the photoresist surface evolves over time. The level set method is a method for tracking the evolution of a surface, so it can simulate the evolution of the photoresist surface. This embodiment determines the exposed photoresist surface based on the initial structure of the semiconductor device, the positive and negative properties of the mask, and the coverage area.

[0028] According to the exposed photoresist surface, the calculation area of ​​the level set method and the initial level set equation value are determined, wherein the level set equation value is a signed Minkowski distance.

[0029] Here is a specific example. In the initial device structure, the coordinate range of silicon is , the coordinate range of positive photoresist is , where the unit is um.

[0030] Two positive masks are set up, which consist of Two two-dimensional polygons on the plane are represented by the vertex sets of the polygons. and , where the unit is um.

[0031] It should be noted that for positive photoresist, the photolithography area is the area covered by the positive photoresist, while for negative photoresist, the photolithography area is the area not covered by the negative photoresist. Therefore, for negative photoresist, the photodevelopment area is the area that is not photolithographically processed.

[0032] For positive photoresist, the actual calculation area is the photoresist area covered (exposed) by the positive mask, that is, Based on this area, the initial value of the level set equation is calculated .

[0033] S2. Determine the evolution speed of the photoresist surface based on the input parameters in step S1.

[0034] Specifically, the evolution rate of the photoresist surface is determined according to the following formula: ; Among them, a, b, c, and d are input parameters, and a and d must be greater than 0; a affects the reaction speed between photoresist and developer in the horizontal direction; b is the influence on the uniformity of the reaction between the photoresist and the developer in the vertical direction; c is the influence on the uniformity of the reaction between the photoresist and the developer in the horizontal direction; d is the speed of the reaction between the photoresist and the developer in the vertical direction; variable , is the center point of the photoresist area Axis and Axis coordinates, calculated from the structure entered by the user.

[0035] In one possible implementation, , then the evolution rate of the photoresist surface is determined by the following formula:

[0036] The specific values ​​of a, b, c, and d need to be determined according to actual production conditions, and those skilled in the art can make reasonable selections based on actual production needs.

[0037] The variables is the center point of the photoresist area Axis and Axis coordinates, that is, in the area middle, , and in the region middle, .

[0038] S3. Obtain the discretized form of the level set equation.

[0039] Specifically, according to the preset discrete precision, the discrete format of the level set equation is obtained based on the approximation format associated with the preset progress in the finite difference method.

[0040] Level Set Equation satisfy , in is the surface evolution velocity, and the velocity field The normal and tangent vectors along the evolving surface are decomposed into , in , are the normal vector and tangent vector of the evolving surface, , The evolution speed normal and tangential components along the evolving surface; Substituting this expression into the level set equation, we get: ; The surface normal vector is calculated as: , Substituting the expression of the normal vector into the level set equation, we get: ; In the photodevelopment simulation, the photoresist surface evolution rate formula is substituted into .

[0041] Among them, the approximation format associated with the preset progress in the finite difference method includes: The approximation formats of time derivatives include the first-order accurate forward Euler format, the second-order TVD Runge-Kutta format, and the third-order TVD Runge-Kutta format; The approximation schemes for spatial derivatives include the first-order upwind scheme, the second-order Runge-Kutta scheme, the second-order Hamilton-Jacobi ENO scheme, the third-order Hamilton-Jacobi ENO scheme, and the fifth-order Hamilton-Jacobi WENO scheme.

[0042] Users can set the spatial discrete step size and select the discrete precision according to actual needs, that is, the discrete precision for spatial derivatives and time derivatives; when the discrete step size is smaller, the grid is denser, the calculation amount is larger, and the final evolution surface is closer to the actual situation. Discrete precision and discrete step size will affect the discrete format. The calculation accuracy of the discrete precision affects the convergence of the solution of the level set equation. That is, when the discrete step length is the same, the higher the precision, the higher the precision of the calculated level set equation value at the grid point, and the closer the final solved evolution surface is to the actual situation.

[0043] In one embodiment, the discrete precision is selected as second order, and the simulation time is 60 seconds. The approximation format of the time derivative is the forward Euler format of first order precision: , Second-order accurate Runge-Kutta (TVD Runge-Kutta) format: First, apply the forward Euler format once and advance the simulation time to , , Then combined with the solved Apply the forward Euler scheme again and advance the simulation time to , , , Then combine the initial data and the result after two forward Euler steps ,get .

[0044] There is also a higher precision third-order Runge-Kutta (TVD Runge-Kutta) format, which is the result of combining the initial data and the data after two forward Euler steps.

[0045] In one embodiment, the approximation format for the spatial derivative is a first-order accurate upwind format (upwinding), with respect to Take the derivative of direction as an example: The forward difference derivative format is ; The backward difference derivative format is ; When speed exist When the speed in the direction is greater than 0, the backward difference format is used, otherwise the forward difference format is used.

[0046] There are also higher-precision second-order Hamilton-Jacobi ENO formats, third-order Hamilton-Jacobi ENO formats, and fifth-order Hamilton-Jacobi WENO formats that make use of interpolating polynomials.

[0047] S4. Initial value based on level set equation The discrete format of the level set equation is solved by the evolution rate to obtain the three-dimensional discrete data field in the calculation area.

[0048] Specifically, Figure 2 As shown, step S4 includes: S401. For the Cartesian grid of the calculation area, at each time layer, a sparse level set region method is used to screen out grid points that meet preset conditions; S402. Solve for grid points that meet preset conditions Discrete values; S403. Advance the time layer until the simulation time is reached to form a three-dimensional discrete data field.

[0049] Numerical solution of level set equations combined with sparse level set regional method: A Cartesian grid is generated on the computational domain, and the finite difference method is applied to obtain the discrete format of the equation. In each time layer, the sparse level set regional method is used to screen out the grid points that meet the conditions, and the solution is obtained for these grid points. Discrete values, thus advancing the time horizon until the simulation time is reached.

[0050] The specific steps of the sparse level set regional method are as follows: on the Cartesian grid corresponding to the calculation area, select the grid points that meet the Minkowski distance that is small enough, and prepare the Minkowski distance values ​​of the neighboring grid points required for solving the finite difference for these grid points. For the grid points that do not meet the conditions, set a fixed value according to their distance sign.

[0051] The Minkowski distance is the distance from the grid point to the evolution surface, and the selected grid points are all grid points whose Minkowski distance is less than a fixed value.

[0052] S5. Use the marching cube method to extract the light-developed surface area up to the simulation time.

[0053] In one embodiment, a marching cube method is used to extract isosurfaces from a three-dimensional discrete data field to obtain a plurality of triangular facets; the plurality of triangular facets form a light-developed surface when the simulation time is reached.

[0054] After the level set equation is solved, the three-dimensional discrete data field in the calculation area described in S1 after the simulated light development is obtained. Then, the marching cube method is used to extract the isosurface in the data field to obtain a set of triangular facets, which represent the photoresist surface reaching the simulation time, and then the result of the simulated 3D semiconductor light development is obtained. The isosurface referred to above is the level set equation Faces with the same value.

[0055] Therefore, users can adjust the process conditions of 3D semiconductor photodevelopment according to the simulation results.

[0056] The technical solution based on the above embodiment has at least the following technical effects: (1) The present invention can predict the photodevelopment evolution surface brought by the photoresist area and the mask area through the level set equation, which is convenient for the progress of subsequent photolithography process; (2) The present invention can determine the light development surface according to the preset discrete precision association, and achieve the matching of calculation precision and calculation efficiency according to the requirements; (3) The present invention only tracks and calculates the grid points near the photodevelopment evolution surface, which has a fast calculation speed and occupies less memory.

[0057] In one embodiment, Figure 3 As shown, a semiconductor light development evolution determination device 60 is provided, comprising: The region determination module 601 is used to determine the calculation region of the simulated light development and the initial value of the level set equation according to the input parameters of the photoresist region and the mask region of the 3D semiconductor device structure. ; A speed determination module 602, for determining the evolution speed of the photoresist surface based on the input parameters; A discrete acquisition module 603 is used to obtain a discrete format of the level set equation; Solving module 604 is used to solve the initial value of the level set equation and the evolution speed to solve the discrete format of the level set equation to obtain a three-dimensional discrete data field in the calculation area; The extraction module 605 is used to extract the light-developed surface area when the simulation time is reached using the marching cube method.

[0058] The semiconductor light development evolution determination device 60 provided in the embodiment of the present application adopts the same inventive concept as the above-mentioned semiconductor light development evolution determination method and can achieve the same beneficial effects, which will not be described in detail here.

[0059] Optionally, in the speed determination module, the evolution speed of the photoresist surface is determined according to the following formula: ; Among them, a, b, c, and d are input parameters. a and d must be greater than 0. a is the factor affecting the reaction speed of the photoresist and the developer in the horizontal direction; b is the factor affecting the uniformity of the reaction of the photoresist and the developer in the vertical direction; c is the factor affecting the uniformity of the reaction of the photoresist and the developer in the horizontal direction; d is the factor affecting the reaction speed of the photoresist and the developer in the vertical direction; variable , is the center point of the photoresist area Axis and Axis coordinates.

[0060] Optionally, in the discrete acquisition module, the level set equation satisfy , in is the surface evolution velocity, and the velocity field The normal and tangent vectors along the evolving surface are decomposed into , in , are the normal vector and tangent vector of the evolving surface, , The evolution speed normal and tangential components along the evolving surface; Substituting this expression into the level set equation, we get: ; The calculation formula of the evolving surface normal vector is: , Substituting the expression of the normal vector into the level set equation, we get: ; In the light development simulation, the photoresist surface evolution rate formula is Substitution .

[0061] Optionally, the discrete acquisition module is specifically used to: According to the preset discrete precision, the discrete format of the level set equation is obtained based on an approximation format associated with the preset progress in a finite difference method.

[0062] Optionally, in the discrete acquisition module, the approximation format associated with the preset discrete precision in the finite difference method includes: The approximation formats of time derivatives include the first-order accurate forward Euler format, the second-order TVD Runge-Kutta format, and the third-order TVD Runge-Kutta format; The approximation schemes for spatial derivatives include the first-order upwind scheme, the second-order Runge-Kutta scheme, the second-order Hamilton-Jacobi ENO scheme, the third-order Hamilton-Jacobi ENO scheme, and the fifth-order Hamilton-Jacobi WENO scheme.

[0063] Optionally, the solution module is specifically used to: For the Cartesian grid of the calculation area, at each time layer, a sparse level set region method is used to screen out grid points that meet preset conditions; Solve for grid points that meet preset conditions Discrete values; The time layer is advanced until the simulation time is reached, forming a three-dimensional discrete data field.

[0064] Optionally, the extraction module is specifically used to: The marching cubic method is used to extract isosurfaces for the three-dimensional discrete data field to obtain a plurality of triangular facets; the triangular facets form a light-developed surface when the simulation time is reached.

[0065] Based on the same inventive concept as the above-mentioned semiconductor light development evolution determination method, the embodiment of the present application also provides an electronic device 70, such as Figure 4 As shown, the electronic device 70 may include a processor 701 and a memory 702 .

[0066] The processor 701 can implement or execute the methods, steps and logic diagrams disclosed in the embodiments of the present invention. The steps of the methods disclosed in the embodiments of the present invention can be directly embodied as being executed by a hardware processor, or by a combination of hardware and software modules in the processor.

[0067] The memory 702 is a non-volatile computer-readable storage medium that can be used to store non-volatile software programs, non-volatile computer executable programs and modules. The memory 702 in the embodiment of the present invention can also be a circuit or any other device capable of implementing a storage function, for storing program instructions and / or data.

[0068] An embodiment of the present invention provides a computer-readable storage medium for storing computer program instructions used by the above-mentioned electronic device, which includes a program for executing the above-mentioned semiconductor photodevelopment evolution determination method.

[0069] The above-mentioned computer storage media can be any available media or data storage devices that can be accessed by a computer, including but not limited to magnetic storage (such as floppy disks, hard disks, magnetic tapes, magneto-optical disks (MO), etc.), optical storage (such as CD, DVD, BD, HVD, etc.), and semiconductor storage (such as ROM, EPROM, EEPROM, non-volatile memory (NAND FLASH), solid-state drive (SSD)), etc.

[0070] The above embodiments are only used to introduce the technical solutions of the present application in detail, but the description of the above embodiments is only used to help understand the methods of the embodiments of the present invention and should not be understood as limiting the embodiments of the present invention. Any changes or substitutions that can be easily thought of by those skilled in the art should be included in the protection scope of the embodiments of the present invention.

Claims

1. A method for determining semiconductor light development evolution, characterized in that: include: According to the input parameters of the photoresist area and mask area of ​​the 3D semiconductor device structure, the calculation area of ​​the simulated light development is determined, and the initial value of the level set equation is determined ; determining an evolution rate of the photoresist surface based on the input parameters; Get the discretized form of the level set equation; Based on the initial value of the level set equation and the evolution speed to solve the discrete format of the level set equation to obtain a three-dimensional discrete data field in the calculation area; The light-developed surface area up to the simulation time is extracted using the marching cube method.

2. The method according to claim 1, characterized in that The evolution rate of the photoresist surface is determined according to the following formula: ； Among them, a, b, c, and d are input parameters. a and d must be greater than 0. a affects the reaction speed of the photoresist and the developer in the horizontal direction; b affects the uniformity of the reaction of the photoresist and the developer in the vertical direction; c is the influence on the uniformity of the reaction between the photoresist and the developer in the horizontal direction; d is the speed of the reaction between the photoresist and the developer in the vertical direction; variable , is the center point of the photoresist area Axis and Axis coordinates.

3. The method according to claim 2, characterized in that The level set equation satisfy ， in is the surface evolution velocity, and the velocity field The normal and tangent vectors along the evolving surface are decomposed into , in , are the normal vector and tangent vector of the evolving surface, , The evolution speed normal and tangential components along the evolving surface; Substituting this expression into the level set equation, we get: ； The calculation formula of the evolving surface normal vector is: ， Substituting the expression of the normal vector into the level set equation, we get: ； In the light development simulation, the photoresist surface evolution rate formula is Substitution .

4. The method according to claim 3, characterized in that The discrete format for obtaining the level set equation includes: According to the preset discrete precision, the discrete format of the level set equation is obtained based on an approximation format associated with the preset progress in a finite difference method.

5. The method according to claim 4, characterized in that The approximation format associated with the preset discrete precision in the finite difference method includes: The approximation formats of time derivatives include the first-order accurate forward Euler format, the second-order TVD Runge-Kutta format, and the third-order TVD Runge-Kutta format; The approximation schemes for spatial derivatives include the first-order upwind scheme, the second-order Runge-Kutta scheme, the second-order Hamilton-Jacobi ENO scheme, the third-order Hamilton-Jacobi ENO scheme, and the fifth-order Hamilton-Jacobi WENO scheme.

6. The method according to claim 4, characterized in that The initial value based on the level set equation and the evolution speed to solve the discrete format of the level set equation to obtain a three-dimensional discrete data field in the calculation area, including: For the Cartesian grid of the calculation area, at each time layer, a sparse level set region method is used to screen out grid points that meet preset conditions; Solve for grid points that meet preset conditions Discrete values; The time layer is advanced until the simulation time is reached, forming a three-dimensional discrete data field.

7. The method according to claim 6, characterized in that The method of extracting the light-developed surface area when the simulation time is reached by using the marching cube method comprises: The marching cubic method is used to extract isosurfaces for the three-dimensional discrete data field to obtain a plurality of triangular facets; the triangular facets form a light-developed surface when the simulation time is reached.

8. A semiconductor light development evolution determination device, characterized in that: include: The region determination module is used to determine the calculation region of the simulated light development and the initial value of the level set equation according to the input parameters of the photoresist region and the mask region of the 3D semiconductor device structure. ; A speed determination module, for determining the evolution speed of the photoresist surface based on the input parameters; Discrete acquisition module, used to obtain the discrete format of the level set equation; Solver module for initial value of the level set equation based on and the evolution speed to solve the discrete format of the level set equation to obtain a three-dimensional discrete data field in the calculation area; Extraction module for extracting the light-developed surface area up to simulation time using the marching cube method.

9. An electronic device comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, characterized in that: When the processor executes the computer program, the steps of the method according to any one of claims 1 to 7 are implemented.

10. A computer-readable storage medium having computer program instructions stored thereon, characterized in that: When the computer program instructions are executed by a processor, the steps of the method according to any one of claims 1 to 7 are implemented.

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