III-V semiconductors separate confinement superlattice optoelectronic devices

Abstract

A method for making of an optoelectronic device and the device therefor comprising confinement layers, waveguides and active layers, all of which comprise a superlattice of binary III-V compounds.

Description

[0001] This invention relates to a method for the making of optoelectronic semiconductor devices and more specifically to the making of separate confined superlattice structures prepared from binary III-V compounds.BACKGROUND OF INVENTION

[0002] The growth of semiconductor III-V compounds by chemical vapor deposition (CVD) using organometallics and hydrides as elemental sources has developed into a viable process with many potential commercial applications. The metallo-organic chemical vapor deposition (MOCVD) process, based on the pyrolysis of alkyls of group-HI elements in an atmosphere of the hydrides of group-V elements, is a common growth technique because it is well adapted to the growth of submicron layers and heterostructures.

[0003] In general, III-V semiconductor alloys in the form of binary, ternary, and quaternary compounds are used when forming semiconductor multilayer devices. A prime concern is the lattice matching of all adjacent layers. Useful physical properties deri...

Examples

example 2

[0048]

6 Wavelength 2-10 .mu.m Substrate Si or GaAs or SiC, or InAs, or InSb, GaSb, InP Bottom and top x layers InP x layers GaP / x layers InSb / x layers confinement layer GaSb superlattice Bottom and top y layers InAs / y layers InSb superlattice waveguide layer Active layer z layers InAs / z layers InSb superlattice Cap layer InAs

[0049] Lower confinement and lower waveguide layers are doped with Si. Upper waveguide and upper confinement layers are doped with Zn. x, y, and z are determined as in Example 1.

example 3

[0050]

7 Wavelength 0.2-0.6 .mu.m Substrate SiC, Al.sub.2O.sub.3, Si, GaAs, Mg0, or Zn0 Buffer layer GaN or other binary III-IV compound lattice matched to substrate Bottom and top x layers AlN / x layers GaN superlattice confinement layer Bottom and top y layers GaN / y layers InN superlattice waveguide layer Active layer z layers GaN / z layers InN superlattice Cap layer GaN or InN superlattice

[0051] Lower confinement and lower waveguide layers are doped with Si, Ge, S, or codoping. Upper waveguide and upper confinement layers are doped with Zn, Mg, Be, or codoping. The length of the period in the superlattice is determined through the use of Equations 3-5, as in Example 1.

example 5

[0052]

8 Wavelength 0.6-1 .mu.m Substrate InP Buffer layer GaAs Bottom and top x layers GaP / x layers InP superlattice confinement layer Bottom and top y layers GaP / y layers / y layers GaAs / y layers InAs waveguide layer superlattice Active layer z layers InAs / z layers GaAs superlattice Cap layer GaN

[0053] Lower confinement and lower waveguide layers are doped with Si. Upper waveguide and upper confinement layers are doped with Zn. The length of the period in the superlattice is determined through the use of Equations 3-5, as in Example 1.

[0001] This invention relates to a method for the making of optoelectronic semiconductor devices and more specifically to the making of separate confined superlattice structures prepared from binary III-V compounds.BACKGROUND OF INVENTION

[0002] The growth of semiconductor III-V compounds by chemical vapor deposition (CVD) using organometallics and hydrides as elemental sources has developed into a viable process with many potential commercial applications. The metallo-organic chemical vapor deposition (MOCVD) process, based on the pyrolysis of alkyls of group-HI elements in an atmosphere of the hydrides of group-V elements, is a common growth technique because it is well adapted to the growth of submicron layers and heterostructures.

[0003] In general, III-V semiconductor alloys in the form of binary, ternary, and quaternary compounds are used when forming semiconductor multilayer devices. A prime concern is the lattice matching of all adjacent layers. Useful physical properties deri...

Examples

example 2

[0048]

6 Wavelength 2-10 .mu.m Substrate Si or GaAs or SiC, or InAs, or InSb, GaSb, InP Bottom and top x layers InP x layers GaP / x layers InSb / x layers confinement layer GaSb superlattice Bottom and top y layers InAs / y layers InSb superlattice waveguide layer Active layer z layers InAs / z layers InSb superlattice Cap layer InAs

[0049] Lower confinement and lower waveguide layers are doped with Si. Upper waveguide and upper confinement layers are doped with Zn. x, y, and z are determined as in Example 1.

example 3

[0050]

7 Wavelength 0.2-0.6 .mu.m Substrate SiC, Al.sub.2O.sub.3, Si, GaAs, Mg0, or Zn0 Buffer layer GaN or other binary III-IV compound lattice matched to substrate Bottom and top x layers AlN / x layers GaN superlattice confinement layer Bottom and top y layers GaN / y layers InN superlattice waveguide layer Active layer z layers GaN / z layers InN superlattice Cap layer GaN or InN superlattice

[0051] Lower confinement and lower waveguide layers are doped with Si, Ge, S, or codoping. Upper waveguide and upper confinement layers are doped with Zn, Mg, Be, or codoping. The length of the period in the superlattice is determined through the use of Equations 3-5, as in Example 1.

example 5

[0052]

8 Wavelength 0.6-1 .mu.m Substrate InP Buffer layer GaAs Bottom and top x layers GaP / x layers InP superlattice confinement layer Bottom and top y layers GaP / y layers / y layers GaAs / y layers InAs waveguide layer superlattice Active layer z layers InAs / z layers GaAs superlattice Cap layer GaN

[0053] Lower confinement and lower waveguide layers are doped with Si. Upper waveguide and upper confinement layers are doped with Zn. The length of the period in the superlattice is determined through the use of Equations 3-5, as in Example 1.

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