Internal gain devices using MIE scattering and resonance

The Mie resonance avalanche photodiode leverages Mie scattering and resonance to enhance carrier generation and multiplication, addressing the limitations of conventional APDs by achieving improved spatial resolution, dynamic range, and data acquisition speed with reduced noise and power consumption, enabling smaller device sizes with maintained performance.

WO2025015339A1PCT designated stage expired Publication Date: 2025-01-16PIXELEXX SYSTEMS INC
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Patent Information

Application Number
PCT/US2024/038071
Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
Priority Date
2023-07-13
Filing Date
2024-07-15
Publication Date
2025-01-16

AI Technical Summary

Technical Problem

Conventional avalanche photodiodes face limitations in achieving high spatial resolution, dynamic range, noise characteristics, and data acquisition speed simultaneously due to their large spatial footprints, higher operating voltages, and increased noise characteristics, which restrict their performance and functionality.

Method used

The development of a Mie resonance avalanche photodiode (Mie-APD) that utilizes Mie scattering and resonance to generate free carriers, featuring a semiconducting material with doped regions and a refractive medium to enhance carrier multiplication via avalanche multiplication, allowing for smaller device geometries while maintaining performance metrics.

Benefits of technology

The Mie-APD achieves improved spatial resolution, dynamic range, and data acquisition speed with reduced noise and power requirements, enabling smaller device sizes without compromising performance, and offers wavelength and polarization selectivity without the need for filtering.

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Abstract

The devices and methods herein relate to a Mie Avalanche Photodiode (Mie- APD). A Mie-APD leverages Mie resonant scattering and avalanche multiplication to generate current. The Mie-APD features a material layer, an absorption region, and a multiplication region. The multiplication region is configured for multiplying free carriers generated when the absorption region absorbs an electromagnetic perturbation. The material layer serves as a substrate for the absorption region and includes the multiplication region. The structure of the Mie-APD allows for the enhancement of spatial resolution, dynamic range, noise characteristics, and data acquisition speed in applications such as hazard detection, 3D sensing, low light imaging, astronomy, and medical imaging, among others. Variations to the structure, design, and fabrication of the Mie-APD can provide further improved performance and functionality such as enhanced response to specific wavelengths and / or polarizations.
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Citation Information

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