Energy-storage type high-voltage pulse modulator for flash RT radiation apparatus

Abstract

The present invention relates to the technical field of high-voltage pulse power supply modulation. Disclosed is an energy-storage type high-voltage pulse modulator for a Flash RT radiation apparatus. The energy-storage type high-voltage pulse modulator comprises an energy-storage charging power supply module, a pulse charging module, a pulse generation module and a pulse transformer, wherein the energy-storage charging power supply module is used for converting an input voltage and charging the pulse charging module; the pulse charging module is used for charging the pulse generation module; and the pulse generation module is used for generating pulses, and generating high-voltage pulses by means of the pulse transformer stepping up voltage. The present invention eliminates the impact on a power grid during a treatment process of a Flash RT device, reduces the costs of infrastructure and supporting construction, and also decreases the weight and volume of a modulator in a Flash RT radiation apparatus.

Description

Energy storage type high-voltage pulse modulator applied to Flash RT ray device TECHNICAL FIELD

[0001] The present application relates to the technical field of high-voltage pulse power modulation, in particular to an energy storage type high-voltage pulse modulator applied to a Flash RT ray device. BACKGROUND

[0002] Flash RT is a potential promising radiotherapy method, and in tens to hundreds of milliseconds, the dose rate and cumulative dose must meet certain requirements to achieve therapeutic effect. In the prior art, a conventional klystron, a conventional microwave transmission device and a conventional accelerating tube are used to realize a Flash RT ray device that meets the application requirements of Flash RT by high duty cycle and high average output power quenching operation mode. The pulse modulator in the Flash RT ray device adopts a conventional pulse modulator scheme, i.e. the pulse modulator can continuously operate in a high duty cycle mode and a high average power mode, and thus can meet the operation needs of the Flash RT device.

[0003] Fig. 1 is a circuit principle diagram of a conventional high-voltage pulse modulator applied to a Flash RT device, which can continuously output average power of hundreds of kW and pulse power of ten MW to tens of MW by using a conventional technical route. The main working process is as follows: 30-100Kw charging modules 1-M obtain electric energy from the power grid in real time, and charge the pulse capacitor Cp together. When the charging voltage on the pulse capacitor Cp reaches V1, the discharge switches ZD1-ZDM are turned on, and the turn-on time is Ton. The pulse capacitor is discharged to the pulse transformer TX4 in the Ton time, a high-voltage pulse is generated to drive the klystron to work. The conventional high-voltage pulse modulator has the following disadvantages:

[0004] (1) The influence on the external power grid is relatively large. In the treatment time of hundreds of ms, the power consumption of the Flash RT ray device will increase from several kW to hundreds of kW, even MW level, which will have a great impact on the power grid.

[0005] (2) The power distribution requirement is high. The real-time power of several hundred kW of the power consumption equipment needs to use the site to be equipped with hundreds of kW of power distribution capacity.

[0006] (3) The modulator equipment in the Flash RT ray device directly powered by the power grid is large. If the block diagram shown in Fig. 1 is used, a 50kW charging power supply is expected to weigh several tens of kg, and the outer size is expected to be 5Ux800mm. If the modulator in Fig. 1 needs an electric power of 500kW, at least 11 50kW charging power supplies are needed, the total weight is expected to be 600kg, and two 30U standard cabinets are needed for the charging power supply. SUMMARY

[0007] The application aims to provide an energy storage type high-voltage pulse modulator applied to a Flash RT ray device, which is used to solve the problems of high influence on power supply network, high distribution requirement and large modulator equipment in the prior art.

[0008] The application solves the above problems by the following technical scheme:

[0009] An energy storage type high-voltage pulse modulator applied to a Flash RT ray device, comprising an energy storage charging power supply module, a pulse charging module, a pulse generating module, a pulse transformer and a klystron, wherein:

[0010] The energy storage charging power supply module is used to convert input voltage and charge the pulse charging module.

[0011] The pulse charging module is used to charge the pulse generating module.

[0012] The pulse generating module is used to generate a pulse, and the pulse transformer is used to step up the voltage to generate a high-voltage pulse for driving the klystron.

[0013] Further, the energy storage charging power supply module comprises a rectifier bridge, a half-bridge series resonant charging circuit, a high-frequency transformer TX3 and a first high-frequency rectifier circuit connected in sequence, and the output of the first high-frequency rectifier circuit is connected to the input end of the pulse charging module.

[0014] Further, the half-bridge series resonant charging circuit comprises a capacitor C1, a capacitor C2, a power semiconductor Z1, a power semiconductor Z2, a resonant capacitor Cs1 and a resonant inductor Ls1, the first end of the capacitor C1 and the first end of the capacitor C2 are connected with the rectifier bridge respectively, the second end of the capacitor C1 and the second end of the capacitor C2 are connected, the first end of the capacitor C1 is also connected with the first end of the resistor R1 and the collector of the power semiconductor Z1, the first end of the capacitor C2 is also connected with the first end of the resistor R2 and the emitter of the power semiconductor Z2, the resonant capacitor Cs1 and the resonant inductor Ls1 are connected in series with the emitter of the power semiconductor Z1, the other end of the high-frequency transformer TX3 primary part is connected with the second end of the capacitor C1, the second end of the resistor R1 and the second end of the resistor R2; the first high-frequency rectifier circuit is composed of a diode DR5, a diode DR6, a diode DR7 and a diode DR8, the anode of the diode DR5 and the cathode of the diode DR7 are connected with one end of the high-frequency transformer TX3 secondary part, the anode of the diode DR6 and the pin of the diode DR8 are connected with the other end of the high-frequency transformer TX3 secondary part, the cathode of the diode DR5 and the cathode of the diode DR6 are connected with the pulse charging module; the anode of the diode DR7 and the anode of the diode DR8 are connected.

[0015] Further, the pulse charging module is composed of at least two charging units, the charging unit comprises an energy storage charging capacitor Cestore and a step-down charging circuit, the step-down charging circuit comprises a power semiconductor ZC1, an inductor LC1 and a diode DC1, the first end of the energy storage charging capacitor Cestore is connected with the output end of the energy storage charging power module and the collector of the power semiconductor ZC1, the second end of the energy storage charging capacitor Cestore is connected with the emitter of the power semiconductor ZC1, the first end of the inductor LC1 and the anode of the diode DC1, the second end of the inductor LC1 and the second end of the energy storage charging capacitor Cestore are connected with the pulse generation module and the anode of the diode DR8 as two output ends of the pulse charging module respectively.

[0016] Further, the voltage reduction charging circuit is replaced by a voltage increase charging circuit, the voltage increase charging circuit comprises a power semiconductor ZC1a, an inductor LC1a and a diode DC1a, the first end of the energy storage charging capacitor Cestore is connected to the output of the energy storage charging power supply module and the first end of the inductor LC1a, the second end of the inductor LC1a is connected to the anode of the diode DC1a and the collector of the power semiconductor ZC1a, the second end of the energy storage charging capacitor Cestore is connected to the emitter of the power semiconductor ZC1a, the cathode of the diode DC1a and the second end of the energy storage charging capacitor Cestore are connected to the two outputs of the pulse generation module respectively.

[0017] Further, the energy storage charging capacitor Cestore is an electrolytic capacitor, a film capacitor, a super capacitor or a combination of a capacitor and a battery.

[0018] Further, the number of the high-frequency transformer TX3 and the first high-frequency rectifier circuit matches the number of the charging unit and the pulse generation module; the pulse generation module comprises an equal number of pulse discharge units, each of the pulse discharge units comprises a pulse capacitor Cp, a power semiconductor ZD1c and a diode Ds, the first end of the pulse capacitor Cp is connected to the charging unit and the collector of the power semiconductor ZD1c respectively, the second end of the pulse capacitor Cp is connected to the charging unit and the anode of the diode Ds respectively, the cathode of the diode Ds is connected to the emitter of the power semiconductor ZD1c and the output of the pulse discharge unit is connected to the pulse transformer.

[0019] Further, the pulse transformer is replaced by a filament heating transformer TX1, the primary part of the filament heating transformer TX1 is connected to a filament power supply, one end of the secondary part of the filament heating transformer TX1 is connected to the cathode of the diode Ds, the first end of the capacitor C7 and the positive input of the klystron, the other end of the secondary part of the filament heating transformer TX1 is connected to the second end of the capacitor C7 and the negative input of the klystron.

[0020] Further, the pulse charging module is composed of at least one charging unit, the charging unit includes energy storage charging capacitor CestoreA1, energy storage charging capacitor CestoreA2, power semiconductor ZC1b, power semiconductor ZC2b, power semiconductor ZC3b, diode DC1b, diode DC5b, diode DC4b, diode DC9b and inductor L3b, the first end of the energy storage charging capacitor CestoreA1 is connected to one output end of the energy storage charging power module, the anode of diode DC1b and the collector of power semiconductor ZC1b, the second end of the energy storage charging capacitor CestoreA1 is connected to the emitter of the power semiconductor ZC3b and the other output end of the energy storage charging power module, the cathode of the diode DC1b is connected to the first end of the energy storage charging capacitor CestoreA2 and the collector of power semiconductor ZC2b, the second end of the energy storage charging capacitor CestoreA2 is connected to the collector of the power semiconductor ZC3b and the anode of diode DC4b, the cathode of the diode DC4b is connected to the emitter of the power semiconductor ZC2b, the anode of diode DC5b, the cathode of the diode DC5b is connected to the cathode of the diode DC9b and one end of the inductor L3b, the anode of the diode DC9b and the other end of the inductor L3b are connected to the pulse generation module as two output ends.

[0021] Further, the energy storage charging power module is replaced by a direct current charging power, the pulse charging module includes at least one pulse charging unit, the pulse charging unit includes resistance RC1, diode DC1d, energy storage charging capacitor CA1, power semiconductor CZA1, power semiconductor CZB1, power semiconductor CZC1, power semiconductor CZD1, resonance capacitor Cs1a, inductor Ls1a, high frequency transformer TXC and second high frequency rectifier circuit, wherein the first end of the resistance RC1 is connected to the positive output end of the direct current charging power, the second end of the resistance RC1 is connected to the anode of the diode DC1d, the cathode of the diode DC1d is connected to the first end of the energy storage charging capacitor CA1, the collectors of the power semiconductor CZA1 and the power semiconductor CZC1, the emitter of the power semiconductor CZC1 is connected to the collector of the power semiconductor CZD1 and the first end of the resonance capacitor Cs1a, the second end of the resonance capacitor Cs1a is connected to the first end of the inductor Ls1a, the second end of the inductor Ls1a is connected to one end of the primary part of the high frequency transformer TXC, the emitter of the power semiconductor CZA1 is connected to the collector of the power semiconductor CZB1 and the other end of the primary part of the high frequency transformer TXC, the emitters of the power semiconductor CZB1 and the power semiconductor CZD1 are grounded, and the secondary part of the high frequency transformer TXC is connected to the second high frequency rectifier circuit and the pulse generation module in turn.

[0022] The pulse generating module comprises a pulse capacitor Cpa, a diode Dsa, a capacitor C3 and a resistor R3, and a plurality of power semiconductors ZD connected in parallel, a first end of the pulse capacitor Cpa is connected with an output end of the pulse charging module and a collector of the power semiconductor ZD, an emitter of the power semiconductor ZD is connected with a cathode of the diode Dsa and one end of a primary part of the pulse transformer, an anode of the diode Dsa is connected with a first end of the capacitor C3 and the resistor R3, and a second end of the capacitor C3 and the resistor R3 is connected with a second end of the pulse capacitor Cpa and the other end of the primary part of the pulse transformer.

[0023] Compared with the prior art, the present application has the following advantages and beneficial effects:

[0024] (1) The present application reduces the impact on the power grid during the treatment process of the Flash RT device by setting the energy storage charging power module and the pulse charging module.

[0025] (2) The present application reduces the weight and volume of the modulator in the Flash RT ray device by optimizing the circuit structure. The output power of the energy storage charging power module of the present application is generally not large, and the weight of the energy storage charging power module and the pulse charging power module (including the energy storage charging capacitor) is several hundred kg lighter than that of the conventional charging power module in the prior art. More importantly, the power distribution related to high voltage of the modulator of the present application is far lower than several hundred kVA in the prior art.

[0026] (3) The cost of supporting construction is low. The present application can replace the existing pulse charging module with multiple pulse charging modules, and at the same time, the circuit structure is ingeniously adopted to optimize the transformation ratio of the pulse transformer, thereby reducing the manufacturing difficulty of the pulse transformer and further realizing the cost reduction. BRIEF DESCRIPTION OF DRAWINGS

[0027] Fig. 1 is a circuit principle diagram of a conventional high-voltage pulse modulator in the prior art;

[0028] Fig. 2 is a principle block diagram of the present application;

[0029] Fig. 3 is a circuit principle diagram of a capacitor energy storage type high-voltage pulse modulator of the present application;

[0030] Fig. 4 is a voltage change curve of the energy storage charging capacitor and the pulse capacitor during the Flash RT treatment process;

[0031] Fig. 5 is a graph of the relationship between the output power of the half-bridge charging power supply and the treatment interval time;

[0032] Fig. 6 is a circuit principle diagram of a single-channel Marx charging energy storage type high-voltage pulse modulator for a Flash RT device;

[0033] Fig. 7 is an electrical schematic diagram of a multi-channel Marx charging energy storage type high voltage pulse modulator for a Flash RT device;

[0034] Fig. 8 is a Flash RT modulator circuit schematic diagram using a PSM structure;

[0035] Fig. 9 is a directly coupled Flash RT modulator circuit schematic diagram using a PSM circuit structure;

[0036] Fig. 10 is a capacitor energy storage type high voltage pulse modulator circuit schematic diagram using multi-channel isolated charging;

[0037] Fig. 11 is an energy storage type high voltage pulse modulator circuit schematic diagram using multi-channel step-up charging. DETAILED DESCRIPTION

[0038] The application will be further described in conjunction with the embodiments below, but the embodiments of the application are not limited thereto.

[0039] Embodiment 1

[0040] Referring to Fig. 2, an energy storage type high voltage pulse modulator applied to a Flash RT device includes an energy storage charging power supply module, a pulse charging module, a pulse generation module, and a pulse transformer, wherein:

[0041] The energy storage charging power supply module is configured to convert an input voltage and charge the pulse charging module.

[0042] The pulse charging module is configured to charge the pulse generation module.

[0043] The pulse generation module is configured to generate a pulse and generate a high voltage pulse through the pulse transformer.

[0044] The energy storage charging power supply module charges the capacitor of the pulse charging module after rectification, transformation, and high frequency rectification of an input commercial power, the pulse charging module charges the capacitor in the pulse generation module, the switch in the pulse generation module operates to generate a pulse, the pulse is boosted through the pulse transformer to generate a high voltage pulse for driving the klystron.

[0045] Embodiment 2

[0046] Referring to Fig. 3, the energy storage charging power supply module includes a rectifier bridge, a half-bridge series resonant charging circuit, a high frequency transformer TX3, and a first high frequency rectifier circuit connected in sequence, and the output of the first high frequency rectifier circuit is connected to the input of the pulse charging module.

[0047] Further, the half-bridge series resonant charging circuit comprises a capacitor C1, a capacitor C2, a power semiconductor Z1, a power semiconductor Z2 (a diode is connected between the collector and the emitter of the power semiconductor Z1 and the power semiconductor Z2), a resonant capacitor Cs1 and a resonant inductor Ls1, the first end of the capacitor C1 and the first end of the capacitor C2 are connected with the rectifier bridge (consisting of diodes DR11, DR12, DR13 and DR14), the second end of the capacitor C1 and the second end of the capacitor C2 are connected, the first end of the capacitor C1 is also connected with the first end of the resistor R1 and the collector of the power semiconductor Z1, the first end of the capacitor C2 is also connected with the first end of the resistor R2 and the emitter of the power semiconductor Z2, the emitter of the power semiconductor Z1 is connected with one end of the primary part of the high-frequency transformer TX3 in sequence after the resonant capacitor Cs1 and the resonant inductor Ls1, the emitter of the power semiconductor Z1 is also connected with the collector of the power semiconductor Z2, the other end of the primary part of the high-frequency transformer TX3 is connected with the second end of the capacitor C1, the second end of the resistor R1 and the second end of the resistor R2; the first high-frequency rectifier circuit consists of diodes DR5, DR6, DR7 and DR8, one end of the secondary part of the high-frequency transformer TX3 is connected with the anode of the diode DR5 and the cathode of the diode DR7, the other end of the secondary part of the high-frequency transformer TX3 is connected with the anode of the diode DR6 and the cathode of the diode DR8, the cathode of the diode DR5 and the cathode of the diode DR6 are connected with the pulse charging module; the anode of the diode DR7 and the anode of the diode DR8 are connected.

[0048] Further, the pulse charging module consists of at least two charging units, and in FIG. 3, N charging units are taken as an example, and the first charging unit comprises an energy storage charging capacitor CestoreA1 and a step-down charging circuit, the step-down charging circuit comprises a power semiconductor ZC1, an inductor LC1 and a diode DC1, the first end of the energy storage charging capacitor CestoreA1 is connected with the output end of the energy storage charging power module and the collector of the power semiconductor ZC1, the second end of the energy storage charging capacitor CestoreA1 is connected with the emitter of the power semiconductor ZC1, the first end of the inductor LC1 and the anode of the diode DC1, the second end of the inductor LC1 and the second end of the energy storage charging capacitor CestoreA1 are connected with the pulse generation module as two output ends of the pulse charging module and are connected with the anode of the diode DR8.

[0049] In Fig. 3, the pulse generating module comprises a pulse capacitor Cp, a diode Ds, a capacitor C3 and a resistor R3, and a plurality of power semiconductors ZD (ZD1~ZDM) connected in parallel, a first end of the pulse capacitor Cp being connected with an output end of the pulse charging module and a collector of the power semiconductors ZD (ZD1~ZDM), an emitter of the power semiconductors ZD (ZD1~ZDM) being connected with a cathode of the diode Ds and one end of a primary part of the pulse transformer, an anode of the diode Ds being connected with a first end of the capacitor C3 and the resistor R3, a second end of the capacitor C3 and the resistor R3 being connected with a second end of the pulse capacitor Cp and the other end of the primary part of the pulse transformer.

[0050] The modulator in Fig. 3 further comprises a bias magnetic power supply and a filament power supply.

[0051] In the treatment process of the Flash RT radiation device, the pulse charging module charges the capacitor in the pulse generating module, the power semiconductors ZD in the pulse generating module act, a pulse is generated, the pulse is boosted by the pulse transformer, and a high-voltage pulse driving the klystron is generated.

[0052] The voltage variation on the energy storage charging capacitor Cestore and the pulse capacitor Cp in the treatment process of the Flash RT is shown in Fig. 4.

[0053] T0 is the treatment preparation time, the energy storage charging power supply module charges the energy storage charging capacitors CestoreA1~CestoreAN, and any one of the charging switches ZC1~ZCN is turned on, and the energy storage charging power supply module can simultaneously charge the pulse capacitor Cp.

[0054] At T1, the voltage across the pulse capacitor Cp reaches V1, and all the charging switches ZC1~ZCN are turned off, at this time, the voltage across the energy storage charging capacitors CestoreA1~CestoreAN is equal to V1. During T1 to T2, the energy storage charging power supply module continues to charge the energy storage charging capacitors CestoreA1~CestoreAN, and when the voltage across the energy storage charging capacitors CestoreA1~CestoreAN reaches V2, the energy storage charging power supply module stops charging the energy storage charging capacitors CestoreA1~CestoreAN. In this embodiment, V2 is 2 times V1.

[0055] At T3, the patient begins treatment, the discharge switch ZD1-ZDM is on for ton, during ton, the pulse capacitor Cp discharges to the pulse transformer TX4, the pulse transformer TX4 generates a high voltage pulse to drive the klystron. At T3+ton, the voltage V1 across the pulse capacitor Cp drops to 0.9V1; during T3+ton to T4, the discharge switch ZD1-ZDM is off, the pulse charging module charges the pulse capacitor, the voltage of the energy storage charging capacitor CestoreA1-CestoreAN starts to drop, the voltage of the pulse capacitor Cp starts to rise from 0.9V1, when the voltage of the pulse capacitor Cp rises to V1, the charging circuit stops working. At this time, the voltage drop of the energy storage charging capacitor CestoreA1-CestoreAN will decrease, and is assumed to be 1.99V1. From T4 to T5, the pulse charging module and the pulse generating module repeat the work of T3-T4, the difference is that the voltage across the energy storage charging capacitor will further decrease, and the process is repeated until the single treatment of the patient is completed.

[0056] In order to more specifically describe the advantages of the energy storage type high voltage pulse modulator for the Flash-RT device, the present application will briefly design the energy storage type high voltage pulse modulator according to the possible operating parameters of the klystron of the Flash-RT device. According to the circuit schematic diagram of the energy storage type high voltage pulse modulator shown in FIG. 3, the modulator is designed: the output power of the charging power supply in FIG. 3 can be calculated as follows: Pout=V1tonη1 / 2Tint , wherein η1 is the efficiency of the half-bridge series resonant charging power supply, Tint is the treatment interval time; according to the above parameters, the output power of the series resonant charging power supply is about 436W, and if the treatment interval time is shortened, the output power will increase. rest

[0057] The relationship between the output power of the half-bridge charging power supply and the treatment interval time is shown in FIG. 5, and it can be seen that the output power of the charging power supply with the energy storage charging capacitor as the load is inversely proportional to the treatment interval time, and therefore, a charging power supply with an appropriate output power can well meet the needs of the Flash RT application.

[0058] In terms of weight: according to FIG. 5, the output power of the energy storage charging power supply module in FIG. 3 is generally not large, and therefore, the weight of the energy storage charging power supply module and the pulse charging power supply module (including the energy storage charging capacitor) in FIG. 3 is several hundred kg lighter than that of the conventional charging power supply module in FIG. 1, and more importantly, the power distribution related to high voltage of the modulator in FIG. 3 is much lower than the hundreds of kVA in FIG. 1.

[0059] Embodiment 3:

[0060] ​On the basis of embodiment 2, as shown in Figure 11, the voltage reduction charging circuit is replaced by a voltage boosting charging circuit. Take the first voltage boosting charging circuit as an example, which includes power semiconductor ZC1, inductor LC1 and diode DC1. The first end of the energy storage charging capacitor CestoreA1 is connected to the output of the energy storage charging power module and the first end of the inductor LC1. The second end of the inductor LC1 is connected to the anode of the diode DC1 and the collector of the power semiconductor ZC1. The second end of the energy storage charging capacitor CestoreA1 is connected to the emitter of the power semiconductor ZC1. The cathode of the diode DC1 and the second end of the energy storage charging capacitor CestoreA1 are connected to the two output ends of the pulse charging module respectively.

[0061] The pulse charging module in Figure 3 adopts N voltage reduction charging circuits, while the charging module shown in Figure 11 adopts N voltage boosting charging circuits. Since voltage boosting charging is adopted, when the energy storage power charging module charges the energy storage charging capacitor CestoreA1~CestoreAN, the pulse charging module charges the pulse capacitor Cp. When the voltage reaches the set voltage V1, the voltage of the energy storage charging capacitor is also V1. Then the voltage boosting charging units 1~N in the pulse charging module charge the pulse capacitor Cp to V2 using the energy stored in the energy storage charging capacitor, and the voltage of the energy storage charging capacitor will decrease. The switches ZD1~ZDM discharge, and in the Ton time, the voltage across the pulse capacitor Cp decreases from V2 to V3, but V3 is higher than V1. Then the voltage boosting charging units 1~N charge the pulse capacitor Cp to V2 using the energy stored in the energy storage charging capacitor. The pulse generating module and the pulse charging module repeat the above work until the treatment is completed.

[0062] Embodiment 4:

[0063] On the basis of embodiment 2, as shown in Figure 8, the pulse charging module is composed of N pulse charging units, and N high-frequency transformer-high-frequency rectifier circuits are matched with the pulse charging module. The pulse generating module includes N pulse discharge units. Take the first pulse discharge unit as an example, which includes pulse capacitor Cp1, power semiconductor ZD1 and diode Ds1. The first end of the pulse capacitor Cp1 is connected to the charging unit and the collector of the power semiconductor ZD1 respectively. The second end of the pulse capacitor Cp1 is connected to the charging unit and the anode of the diode Ds1 respectively. The cathode of the diode Ds1 is connected to the emitter of the power semiconductor ZD1 and serves as the output end of the pulse discharge unit, which is connected to the transformer.

[0064] The Flash RT modulator of PSM type in Fig. 8 is composed of multi-output charging power supply, N energy storage PSM pulse units, pulse transformer and other auxiliary power supply. The charging module in the multi-output charging power supply in the figure is composed of Cs1, Ls1 and the following transformer TXC1, TXC2, …, TXCN to form a series resonant charging, which charges the energy storage charging capacitor CestoreA1, CestoreA2 to CestoreAN in the PSM pulse unit to a certain voltage, stores the effective energy meeting the needs of a Flash RT treatment, and the pulse charging unit 1-N in the PSM unit charges the pulse capacitor Cp1-CpN in the pulse discharge unit 1-N. The solid-state switches ZD1-ZDN in the pulse discharge unit act to generate a rectangular voltage pulse with amplitude V0 and pulse width Tp. These rectangular voltage pulses are superimposed at the input end of the pulse transformer to form a rectangular voltage pulse with amplitude N×V0 and pulse width Tp. The rectangular voltage pulse is boosted to the voltage pulse required for the klystron to work by the pulse transformer TX4. The Flash RT modulator with the PSM circuit structure proposed in Fig. 8 is to replace the pulse charging module in Fig. 1 with multiple pulse charging units. In addition, in terms of technical implementation, the use of PSM circuit structure can reduce the turns ratio of the pulse transformer and the manufacturing difficulty of the pulse transformer.

[0065] Example 5:

[0066] On the basis of Example 4, as shown in Fig. 9, the pulse transformer is replaced by a filament heating transformer TX1, the primary part of the filament heating transformer TX1 is connected to the filament power supply V1, one end of the secondary part of the filament heating transformer TX1 is connected to the cathode of the diode Ds1, the first end of the capacitor C7 and the positive input end of the klystron, and the other end of the secondary part of the filament heating transformer TX1 is connected to the second end of the capacitor C7 and the negative input end of the klystron.

[0067] The PSM type Flash RT modulator in Fig. 9 is composed of a multi-output charging power supply, N energy storage type PSM pulse units and other auxiliary power supplies. The charging module in the multi-output charging power supply in the figure is formed by Cs1, Ls1 and the following transformers TXC1, TXC2,..., TXCN in series resonance charging, charging the energy storage charging capacitors CestoreA1, CestoreA2 to CestoreAN in the PSM pulse units to a certain voltage, storing effective energy meeting the needs of a Flash RT treatment, the pulse charging modules 1-N in the PSM units charging the pulse capacitors Cp1-CpN in the pulse discharge modules 1-N. The solid state switches ZD1-ZDN in the pulse discharge modules act to generate a rectangular voltage pulse with an amplitude of V0 and a pulse width of Tp, these rectangular voltage pulses being superimposed at the klystron cathode end to form a rectangular voltage pulse with an amplitude of N x V0 and a pulse width of Tp, the N x V0 being equal to the cathode operating voltage of the klystron. The filament heating transformer TX1 realizes electrical isolation of the high voltage and the filament heating power supply V1.

[0068] Example 6:

[0069] On the basis of Example 2, as shown in Fig. 6 and Fig. 7, the pulse charging module is composed of at least one charging unit, taking the first charging unit as an example, the charging unit includes the energy storage charging capacitor CestoreA1, the energy storage charging capacitor CestoreA2, the power semiconductor ZC1, the power semiconductor ZC2, the power semiconductor ZC3, the diode DC1, the diode DC5, the diode DC4, the diode DC9 and the inductor L3, the first end of the energy storage charging capacitor CestoreA1 is connected to one output end of the energy storage charging power supply module, the anode of the diode DC1 and the collector of the power semiconductor ZC1, the second end of the energy storage charging capacitor CestoreA1 is connected to the emitter of the power semiconductor ZC3 and the other output end of the energy storage charging power supply module, the cathode of the diode DC1 is connected to the first end of the energy storage charging capacitor CestoreA2 and the collector of the power semiconductor ZC2, the second end of the energy storage charging capacitor CestoreA2 is connected to the collector of the power semiconductor ZC3 and the anode of the diode DC4, the cathode of the diode DC4 is connected to the emitter of the power semiconductor ZC2, the anode of the diode DC5, the cathode of the diode DC5 is connected to the cathode of the diode DC9 and one end of the inductor L3, the anode of the diode DC9 and the other end of the inductor L3 are two output ends respectively connected to the pulse generation module.

[0070] In Fig. 6, the working principle of the energy storage charging power supply is similar to that of Fig. 3, but during the charging process, the electronic devices inside the pulse charging module need to be controlled to work. The specific process is as follows: at time T0, ZC2 and ZC3 in the pulse charging module are turned on, and the energy storage charging power supply charges the energy storage capacitors CestroreA1 and CestroreA2 in the pulse charging circuit 1 and the pulse capacitor Cp. At time T1, the voltage across Cp reaches the working voltage V1, and the voltage across the energy storage capacitors in the pulse charging module is slightly higher than the voltage V1 across Cp. ZC3 and ZC2 in the pulse charging module are turned off. During the time period from T1 to T1+ton, ZD1-ZDM in the pulse generation module are turned on, and the pulse capacitor Cp discharges through ZD1-ZDM to the pulse transformer, which generates a high-voltage pulse to drive the klystron. During the time period from T1+ton to T2, ZD1-ZDM in the pulse high-voltage module are turned off; ZC1 and ZC2 in the pulse charging module are turned on and off in a series of actions to charge the pulse capacitor Cp, so that the voltage across the pulse capacitor recovers from 0.9V1 to V1, and the voltage across the energy storage capacitors CestoreA1 and CestoreA2 in the pulse charging module decreases. During the time period from T2 to the end of a single treatment, the pulse high-voltage module and the pulse charging module repeat the work during the time period from T1 to T2 until the treatment ends.

[0071] The main difference between the FlashRT energy storage high-voltage pulse modulator in Fig. 7 and that in Fig. 6 is that the pulse charging module in Fig. 7 is composed of multiple Marx charging circuits.

[0072] Example 7:

[0073] On the basis of embodiment 1, as shown in Figure 10 (magnetic bias power supply, filament power supply and klystron part omitted), the energy storage charging power supply module is replaced by a direct current charging power supply, and the pulse charging module includes at least one pulse charging unit. Take the first pulse charging unit as an example, the pulse charging unit includes a resistor RC1, a diode DC1, an energy storage charging capacitor CA1, a power semiconductor CZA1, a power semiconductor CZB1, a power semiconductor CZC1, a power semiconductor CZD1, a resonance capacitor Cs1, an inductor Ls1, a high-frequency transformer TXC and a second high-frequency rectifier circuit. The first end of the resistor RC1 is connected to the positive output end of the direct current charging power supply, the second end of the resistor RC1 is connected to the anode of the diode DC1, the cathode of the diode DC1 is connected to the first end of the energy storage charging capacitor CA1, the collector of the power semiconductor CZA1 and the power semiconductor CZC1, the emitter of the power semiconductor CZC1 is connected to the collector of the power semiconductor CZD1 and the first end of the resonance capacitor Cs1, the second end of the resonance capacitor Cs1 is connected to the first end of the inductor Ls1, the second end of the inductor Ls1 is connected to one end of the primary part of the high-frequency transformer TXC, the emitter of the power semiconductor CZA1 is connected to the collector of the power semiconductor CZB1 and the other end of the primary part of the high-frequency transformer TXC, the emitters of the power semiconductor CZB1 and the power semiconductor CZD1 are grounded, and the secondary part of the high-frequency transformer TXC is connected to the second high-frequency rectifier circuit and the pulse generation module in turn.

[0074] The working principle is: the direct current charging power supply V3 charges the energy storage charging capacitors CA1-CAM in the pulse charging modules 1-N through the resistors RC1 / DC1, RC2 / DC2, …, RCM / DCN to a certain voltage, so that the energy storage charging capacitors CA1-CAM store enough effective energy required for one Flash RT treatment. When the Flash RT treatment starts, the pulse charging modules 1-M charge Cp in the pulse generation module to a certain voltage, and then the solid-state switches ZD1-ZDM in the pulse generation module generate voltage pulses which are sent to the primary of the pulse transformer TX4. The pulse transformer TX4 converts the voltage pulses generated by the pulse generation module into voltage pulses that meet the operating requirements of the klystron, so that the klystron outputs microwaves that meet the operating requirements of Flash RT. The direct current power supply V1 in Figure 10 is a magnetic bias power supply, and the direct current power supply V2 is a filament heating power supply.

[0075] The high-voltage pulse modulators for the Flash RT device in FIG. 3, FIG. 6-FIG. 11 in the present application all omit the control circuit. The control circuit principle and implementation scheme of the high-voltage pulse modulator of the Flash RT device are all well known in the industry. Industry professionals can realize the high-voltage pulse modulator meeting various Flash RT treatment needs according to the above circuit schematic diagram. The energy storage charging capacitors Cestore, CA1-CAM involved in the above embodiments are electrolytic capacitors or film capacitors.

[0076] Although the present application has been described with reference to the explanatory embodiments thereof, the foregoing embodiments are merely desirable implementation of the present application, and the implementation of the present application is not limited to the foregoing embodiments, it should be understood that those skilled in the art can design many other modifications and implementations, and these modifications and implementations will fall within the scope and spirit of the principles disclosed in the present application.

Claims

1. A storage-type high-voltage pulse modulator applied to a Flash RT radiation device, characterized in that, The pulse charging module is connected to the pulse generating module. The energy storage charging power supply module is used to convert input voltage and charge the pulse charging module. The pulse charging module is used to charge the pulse generating module. The pulse generating module is used to generate pulses and boost the voltage through the pulse transformer to generate high-voltage pulses.

2. The energy storage type high voltage pulse modulator applied to the Flash RT radiation device according to claim 1, characterized in that, The energy storage charging power supply module includes a rectifier bridge, a half-bridge series resonant charging circuit, a high-frequency transformer TX3, and a first high-frequency rectifier circuit connected in sequence.

3. The energy storage type high voltage pulse modulator applied to the Flash RT radiation device according to claim 2, characterized in that, The pulse charging module includes a plurality of charging units, each of which is configured with energy storage charging function and can be connected to the pulse generating module to realize energy conversion and pulse modulation.

4. The energy storage type high voltage pulse modulator for use in a flash RT device according to claim 3, wherein The charging circuit is configured to adapt to the demand of different voltage levels, including energy storage part, power semiconductor, inductive element, and diode, to realize energy conversion, wherein the energy storage part is connected to the charging power supply module and the pulse generating module to provide stable pulse output.

5. The energy storage type high voltage pulse modulator applied to the Flash RT radiation device according to claim 4, characterized in that, The energy storage part is electrolytic capacitor, film capacitor, super capacitor, or a combination of capacitor and battery.

6. The energy storage type high voltage pulse modulator applied to the Flash RT radiation device according to claim 4 or 5, characterized in that, The high-frequency transformer TX3 and the rectifier circuit are configured to match the number of charging units and pulse generating modules to optimize energy conversion efficiency.

7. The energy storage type high voltage pulse modulator applied to the Flash RT radiographic device according to claim 4, characterized in that, The pulse generating module includes a plurality of pulse discharge units, each of which includes at least one pulse capacitor and at least one power semiconductor, and at least one diode, wherein the pulse capacitor is connected to the charging unit and the power semiconductor, and the diode is connected to the power semiconductor and provides an interface to the pulse transformer as the output of the pulse discharge unit.

8. The energy storage type high voltage pulse modulator applied to the Flash RT radiation device according to claim 7, characterized in that, The pulse transformer is configured to adapt to different types of energy conversion requirements, including but not limited to filament heating transformer, wherein one part of the pulse transformer is connected to the energy source, and the other part provides at least one output for connecting energy regulation components, including diode and klystron, to realize energy management and control.

9. The energy-storing high-voltage pulse modulator for use in a Flash RT device according to any one of claims 1-3, characterized in that, The pulse charging module includes a plurality of charging units for storing and regulating energy, each of which includes at least one energy storage charging capacitor and a plurality of power semiconductors and diodes, which are connected to each other to realize energy management and control, wherein the energy storage charging capacitor is connected to the power semiconductor, and the diode is configured to provide stable energy output to the pulse generating module.

10. The energy storage type high voltage pulse modulator applied to the Flash RT radiation device according to claim 1, characterized in that, The energy storage charging power supply module is replaced by a direct current charging power supply, and the pulse charging module comprises at least one pulse charging unit, wherein the pulse charging unit comprises a resistor RC1, a diode DC1d, a capacitor CA1, a power semiconductor CZA1, a power semiconductor CZB1, a power semiconductor CZC1, a power semiconductor CZD1, a resonance capacitor Cs1a, an inductor Ls1a, a high-frequency transformer TXC and a second high-frequency rectifier circuit, wherein a first end of the resistor RC1 is connected to a positive output end of the direct current charging power supply, a second end of the resistor RC1 is connected to an anode of the diode DC1d, a cathode of the diode DC1d is connected to a first end of the energy storage charging capacitor CA1, a collector of the power semiconductor CZA1 and a power semiconductor CZC1, an emitter of the power semiconductor CZC1 is connected to a collector of the power semiconductor CZD1 and a first end of the resonance capacitor Cs1a, a second end of the resonance capacitor Cs1a is connected to a first end of the inductor Ls1a, a second end of the inductor Ls1a is connected to one end of a primary part of the high-frequency transformer TXC, an emitter of the power semiconductor CZA1 is connected to a collector of the power semiconductor CZB1 and the other end of the primary part of the high-frequency transformer TXC, emitters of the power semiconductor CZB1 and the power semiconductor CZD1 are grounded, and the secondary part of the high-frequency transformer TXC is connected to the second high-frequency rectifier circuit and a pulse generation module in sequence.

11. The energy storage type high voltage pulse modulator for use in a flash RT device according to any one of claims 1-5, 10, characterized in that, The pulse generation module comprises a pulse capacitor Cpa, a diode Dsa, a capacitor C3 and a resistor R3, and a plurality of power semiconductors ZD connected in parallel, a first end of the pulse capacitor Cpa is connected to an output end of the pulse charging module and a collector of the power semiconductor ZD, an emitter of the power semiconductor ZD is connected to a cathode of the diode Dsa and one end of a primary part of a pulse transformer, an anode of the diode Dsa is connected to a first end of the capacitor C3 and the resistor R3, a second end of the capacitor C3 and the resistor R3 is connected to a second end of the pulse capacitor Cpa and the other end of the primary part of the pulse transformer.

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