Multilayer polymer capacitor based on n-type conductive polymer, and preparation method therefor
By treating the surface of the capacitor monolayer with a surface modifier and growing an n-type conductive polymer film in situ, combined with a carbon conductive layer and a silver electrode, the problem of n-type conductive polymer penetrating oxide micropores in MLPC was solved, thus realizing a chip multilayer capacitor with low ESR and high stability.
Patent Information
- Application Number
- PCT/CN2025/089205
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2024-07-01
- Filing Date
- 2025-04-16
- Publication Date
- 2026-01-08
AI Technical Summary
In existing multilayer polymer capacitors (MLPCs), n-type conductive polymers are difficult to penetrate oxide micropores, resulting in high contact resistance and poor operational stability, making it difficult to meet the long-term operation requirements under high temperature and high humidity environments.
By treating the capacitor with a surface modifier, an n-type conductive polymer film is grown in situ, combined with a carbon conductive layer and a silver electrode, to achieve filling and tight coverage of oxide micropores, reduce the equivalent series resistance (ESR), and improve stability.
It effectively reduces the ESR of MLPC, improves its working stability in high temperature and high humidity environments, and meets the long-term operation requirements of equipment such as servers and 5G base stations.