Part for semiconductor processing equipment, and manufacturing method therefor

Abstract

Disclosed in the embodiments of the present disclosure are a part for semiconductor processing equipment, and a manufacturing method therefor. The part comprises: a first silicon carbide layer and a second silicon carbide layer, wherein the second silicon carbide layer is arranged on one side of the first silicon carbide layer, and the number of crystal boundaries in the second silicon carbide layer is different from that of crystal boundaries in the first silicon carbide layer.

Description

Components and manufacturing methods of semiconductor processing equipment

[0001] Cross-reference to related applications

[0002] This application is based on and claims priority to Chinese Patent Application No. 202411665577.4, filed on November 20, 2024, the entire contents of which are incorporated herein by reference. Technical Field

[0003] This disclosure relates to the field of semiconductor technology, and more particularly to a component of a semiconductor processing equipment and a method for manufacturing the same. Background Technology

[0004] Semiconductor manufacturing processes include etching and thin-film deposition. Etching uses plasma generated by ionization of an etchant (such as fluorine-containing gas) to bombard the wafer, leaving the desired circuit patterns on its surface. Thin-film deposition uses deposition methods to repeatedly stack insulating materials between layers of metal to form a thin film. Because both processes utilize plasma technology, which can easily corrode cavities and components, components within semiconductor processing equipment must possess excellent plasma resistance, low reactivity to fluorine-containing etching gases, and low conductivity.

[0005] Traditional semiconductor processing equipment components are made of silicon or quartz. With the advancement of integrated circuit miniaturization, the demand for and importance of etching processes in integrated circuit manufacturing are constantly increasing. The power and energy of etching plasmas are continuously improving, leading to a higher utilization rate of components made from silicon carbide (SiC) materials. However, silicon carbide-based components still have many problems that urgently need improvement. Summary of the Invention

[0006] A first aspect of this disclosure provides a component for a semiconductor processing apparatus. The component includes:

[0007] First silicon carbide layer;

[0008] A second silicon carbide layer is disposed on one side of the first silicon carbide layer, wherein the number of grain boundaries in the second silicon carbide layer is different from the number of grain boundaries in the first silicon carbide layer.

[0009] In some embodiments, the first silicon carbide layer comprises a crystal of a first crystal system, and the second silicon carbide layer comprises a crystal of a second crystal system, wherein the second crystal system is different from the first crystal system.

[0010] In some embodiments, the first silicon carbide layer further includes crystals of the second crystal system, wherein the proportion of crystals of the first crystal system in the first silicon carbide layer is greater than the proportion of crystals of the second crystal system; the second silicon carbide layer further includes crystals of the first crystal system, wherein the proportion of crystals of the second crystal system in the second silicon carbide layer is greater than the proportion of crystals of the first crystal system.

[0011] In some embodiments, the atomic density of the crystal in the first crystal system is different from that of the crystal in the second crystal system.

[0012] In some embodiments, one of the first crystal system and the second crystal system is a cubic crystal system, and the other of the first crystal system and the second crystal system is a hexagonal crystal system.

[0013] In some embodiments, the component further includes a connector disposed between the first silicon carbide layer and the second silicon carbide layer, wherein the connector connects the first silicon carbide layer and the second silicon carbide layer respectively.

[0014] In some embodiments, the connector includes a third silicon carbide layer; wherein the crystal system of the third silicon carbide layer is the same as that of the first silicon carbide layer, or the crystal system of the third silicon carbide layer is the same as that of the second silicon carbide layer.

[0015] In some embodiments, the connector includes a third silicon carbide layer and a fourth silicon carbide layer, wherein the third silicon carbide layer is disposed between the first silicon carbide layer and the fourth silicon carbide layer; wherein the crystal system of the third silicon carbide layer is the same as that of the first silicon carbide layer, and the crystal system of the fourth silicon carbide layer is the same as that of the second silicon carbide layer.

[0016] In some embodiments, the density of the third silicon carbide layer is less than that of the first silicon carbide layer; the density of the fourth silicon carbide layer is less than that of the second silicon carbide layer.

[0017] In some embodiments, the first silicon carbide layer includes a stepped portion on the side facing the second silicon carbide layer, the stepped portion having a lower stepped surface, an upper stepped surface, and a stepped side surface, the stepped side surface connecting the lower stepped surface and the upper stepped surface; the second silicon carbide layer includes:

[0018] The first part covers the lower step surface and a portion of the step side surface that is relatively close to the lower step surface;

[0019] The second part covers the upper step surface;

[0020] The third part covers another portion of the side surface of the step that is relatively close to the upper step surface and the side surface of the second part;

[0021] The connector extends between the first part and the third part, and between the second part and the third part.

[0022] In some embodiments, the thickness of the third portion is greater than or equal to the thickness of the first portion, and the thickness of the third portion is greater than or equal to the thickness of the second portion.

[0023] In some embodiments, at least one of the first silicon carbide layer and the second silicon carbide layer is a recycled silicon carbide layer.

[0024] In some embodiments, the component has a planar structure, or the component has a stepped structure.

[0025] A second aspect of this disclosure provides a method for manufacturing a component of a semiconductor processing apparatus. The manufacturing method includes:

[0026] Forming the first silicon carbide layer;

[0027] A second silicon carbide layer is formed on one side of the first silicon carbide layer, wherein the number of grain boundaries in the second silicon carbide layer is different from the number of grain boundaries in the first silicon carbide layer.

[0028] In some embodiments, the manufacturing method further includes forming a connector between the first silicon carbide layer and the second silicon carbide layer, wherein the connector connects the first silicon carbide layer and the second silicon carbide layer respectively.

[0029] In some embodiments, forming a connector between the first silicon carbide layer and the second silicon carbide layer includes:

[0030] A bonding material is coated between the first silicon carbide layer and the second silicon carbide layer;

[0031] A first heat treatment is performed on the first silicon carbide layer and the second silicon carbide layer coated with the connecting material, causing the connecting material to react and generate a third silicon carbide layer to form the connector; wherein the crystal system of the third silicon carbide layer is the same as that of the first silicon carbide layer, or the crystal system of the third silicon carbide layer is the same as that of the second silicon carbide layer.

[0032] In some embodiments, the thickness of the connecting material is 0.05 mm to 1 mm.

[0033] In some embodiments, the temperature range of the first heat treatment is 900°C to 2500°C; the connecting material includes at least one of carbon powder, silicon powder, silicon carbide powder, organic binder, silane precursor, and organic solvent.

[0034] In some embodiments, forming a connector between the first silicon carbide layer and the second silicon carbide layer includes:

[0035] The first silicon carbide layer and the second silicon carbide layer are stacked so that the first silicon carbide layer and the second silicon carbide layer are in contact;

[0036] A second heat treatment is performed on the stacked first silicon carbide layer and second silicon carbide layer, such that the first silicon carbide layer diffuses toward the second silicon carbide layer to form a third silicon carbide layer, and the second silicon carbide layer diffuses toward the first silicon carbide layer to form a fourth silicon carbide layer, wherein the third silicon carbide layer and the fourth silicon carbide layer constitute the connector; wherein the crystal system of the third silicon carbide layer is the same as that of the first silicon carbide layer, and the crystal system of the fourth silicon carbide layer is the same as that of the second silicon carbide layer.

[0037] In some embodiments, the temperature range of the second heat treatment is 1600°C to 2300°C.

[0038] In some embodiments, forming a connector between the first silicon carbide layer and the second silicon carbide layer includes:

[0039] The first silicon carbide layer is placed in the reaction chamber;

[0040] A first reaction gas is introduced into the reaction chamber to deposit the connector on one side of the first silicon carbide layer;

[0041] The step of forming a second silicon carbide layer on one side of the first silicon carbide layer includes:

[0042] A second reaction gas is introduced into the reaction chamber to deposit the second silicon carbide layer on the side of the connector that is relatively far from the first silicon carbide layer; wherein both the first reaction gas and the second reaction gas include carbon and silicon elements, and the composition ratio of carbon and silicon elements in the first reaction gas is greater than the composition ratio of carbon and silicon elements in the second reaction gas.

[0043] In some embodiments, the temperature range for depositing the connector and the second silicon carbide layer is 900°C to 1500°C; the first and second reactant gases include at least one of trichloromethylsilane, tetrachlorosilane, and alkanes.

[0044] In some embodiments, at least one of the first silicon carbide layer and the second silicon carbide layer is a recycled silicon carbide layer; the manufacturing method further includes:

[0045] The recycled silicon carbide layer is subjected to surface pretreatment; wherein the surface pretreatment includes at least one of oxidation, cleaning, and grinding.

[0046] In some embodiments, the surface roughness of the recycled silicon carbide layer after surface pretreatment is less than 0.5 μm, and the surface impurity content of the recycled silicon carbide layer after surface pretreatment is less than 0.1 ppm. Attached Figure Description

[0047] Figure 1 is a schematic diagram of a cross-section of a component provided in the first embodiment of this disclosure.

[0048] Figure 2 is a schematic diagram of a component cross-section provided in the second embodiment of this disclosure.

[0049] Figure 3 is a schematic diagram of a component cross-section provided in the third embodiment of this disclosure.

[0050] Figure 4 is a schematic diagram of a component cross-section provided in the fourth embodiment of this disclosure.

[0051] Figure 5 is a schematic diagram of a component cross-section provided in the fifth embodiment of this disclosure.

[0052] Figure 6 is a flowchart of a method for manufacturing a component according to an embodiment of this disclosure. Detailed Implementation

[0053] To facilitate understanding of this disclosure, exemplary embodiments of the disclosure will now be described in more detail with reference to the accompanying drawings. While exemplary embodiments of the disclosure are shown in the drawings, it should be understood that the disclosure may be implemented in various forms and should not be limited to the specific embodiments set forth herein. Rather, these embodiments are provided to enable a more thorough understanding of the disclosure and to fully convey the scope of the disclosure to those skilled in the art.

[0054] In the following description, numerous specific details are set forth in order to provide a more thorough understanding of this disclosure. However, it will be apparent to those skilled in the art that this disclosure may be practiced without one or more of these details. In some embodiments, to avoid confusion with this disclosure, certain technical features well-known in the art are not described; that is, not all features of the actual embodiments, nor well-known functions and structures, may be described herein.

[0055] The present disclosure will be described in more detail below by way of example with reference to the accompanying drawings. The advantages and features of the present disclosure will become clearer from the following description and claims. It should be noted that the drawings are in a very simplified form and use non-precise proportions, and are only used to facilitate and clarify the illustration of the embodiments of the present disclosure.

[0056] It is understood that the meanings of “on”, “above” and “above” in this disclosure should be interpreted in the broadest sense, such that “on” means not only that it is “on” something without any intervening feature or layer (i.e., directly on something), but also that it is “on” something with an intervening feature or layer.

[0057] In the embodiments of this disclosure, the terms "first," "second," "third," etc., are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence.

[0058] In embodiments of this disclosure, the term "layer" refers to a portion of material comprising a region having thickness. A layer may extend over the entirety of a lower or upper structure, or may have a range smaller than that of the lower or upper structure. Furthermore, a layer may be a region of a homogeneous or heterogeneous continuous structure with a thickness less than the thickness of the continuous structure. For example, a layer may be located between the top and bottom surfaces of a continuous structure, or a layer may be located between any horizontal faces at the top and bottom surfaces of the continuous structure. A layer may extend horizontally, vertically, and / or along an inclined surface. A layer may include multiple sublayers.

[0059] It should be noted that the technical solutions described in the embodiments of this disclosure can be combined arbitrarily without conflict.

[0060] It should be noted that the components in some possible embodiments of this disclosure can be used as at least one of a focusing ring, a spray head, a tray, and an edge ring within a semiconductor processing equipment. The semiconductor processing equipment can be a thin film deposition equipment or an etching equipment. Thin film deposition equipment includes chemical vapor deposition (CVD) equipment, metal-organic chemical vapor deposition (MOCVD) equipment, physical vapor deposition (PVD) equipment, and atomic layer deposition (ALD) equipment. Etching equipment includes reactive ion etching (RIE) equipment, inductively coupled plasma (ICP) equipment, neutral loop discharge (NLD) equipment, and ion beam etching (IBE) equipment.

[0061] Figure 1 is a schematic diagram of a cross-section of a component provided in the first embodiment of this disclosure. Referring to Figure 1, the component 100 includes a first silicon carbide layer 110 and a second silicon carbide layer 120; the second silicon carbide layer 120 is disposed on one side of the first silicon carbide layer 110, wherein the number of grain boundaries of the second silicon carbide layer 120 is different from the number of grain boundaries of the first silicon carbide layer 110.

[0062] It should be noted that the inventors of this application have discovered through research that the number of grain boundaries in silicon carbide (SiC) components is one of the important factors affecting the etching resistance of the components. Specifically, the more grain boundaries there are, the easier it is for plasma to penetrate into the SiC interior through the grain boundaries, microscopically increasing the etched area of ​​the SiC. At the same time, when the etching reaches a certain depth into the grain boundaries, small grains near the grain boundaries are more likely to detach directly, increasing the consumption of SiC and resulting in lower etching resistance of the components.

[0063] Therefore, in some possible embodiments of this disclosure, by providing components including a first silicon carbide layer 110 and a second silicon carbide layer 120 with different numbers of grain boundaries, composite silicon carbide components can be formed, which is beneficial to improving the etching resistance of the silicon carbide components. In practical applications, the silicon carbide layer with fewer grain boundaries can be oriented towards the plasma. For example, if the number of grain boundaries in the first silicon carbide layer 110 is less than the number of grain boundaries in the second silicon carbide layer 120, then the first silicon carbide layer 110 can be oriented towards the plasma. Similarly, if the number of grain boundaries in the second silicon carbide layer 120 is less than the number of grain boundaries in the first silicon carbide layer 110, then the second silicon carbide layer 120 can be oriented towards the plasma. For ease of understanding, the following explanation will use the example of the second silicon carbide layer 120 having fewer grain boundaries than the first silicon carbide layer 110.

[0064] Figure 2 is a schematic diagram of a cross-section of a component according to a second embodiment of this disclosure. It should be noted that the same reference numerals are used for the same structures as in the above embodiments, and the same structures can be referred to the relevant descriptions in the above embodiments without further detailed description. This embodiment only describes the different structures in detail. The difference from Figure 1 is that the component 100 shown in Figure 2 also includes a connector 130.

[0065] Referring to FIG2, the component 100 further includes a connector 130, which is disposed between the first silicon carbide layer 110 and the second silicon carbide layer 120, wherein the connector 130 connects the first silicon carbide layer 110 and the second silicon carbide layer 120 respectively.

[0066] In some possible embodiments of this disclosure, a connector 130 is provided between the first silicon carbide layer 110 and the second silicon carbide layer 120. The connector 130 can connect the first silicon carbide layer 110 and the second silicon carbide layer 120 with different numbers of grain boundaries, thereby forming a composite silicon carbide component.

[0067] In some embodiments, the first silicon carbide layer 110 comprises a crystal of a first crystal system, and the second silicon carbide layer 120 comprises a crystal of a second crystal system, wherein the second crystal system is different from the first crystal system. It should be noted that silicon carbide has various crystal systems, such as cubic, hexagonal, etc. The difference between the second and first crystal systems includes: the first crystal system being cubic and the second crystal system being hexagonal; or, the second crystal system being cubic and the first crystal system being hexagonal. That is, one of the first and second crystal systems is cubic, and the other is hexagonal.

[0068] In some possible embodiments disclosed herein, the first silicon carbide layer 110 and the second silicon carbide layer 120 can both be single-crystal silicon carbide, and the crystal systems of the first silicon carbide layer 110 and the second silicon carbide layer 120 are different. For example, the first silicon carbide layer 110 is 3C SiC, and the second silicon carbide layer 120 is 6H SiC. 3C SiC (also known as β-SiC) and 6H SiC (also known as α-SiC) are the two most common types of silicon carbide. 3C SiC has a cubic structure, meaning its crystal system is cubic; 6H SiC has a hexagonal structure, meaning its crystal system is hexagonal. Different crystal systems have a significant impact on the physical properties and applications of silicon carbide. For example, 6H SiC has better etching resistance than 3C SiC. Thus, by connecting 6H SiC and 3C SiC to form a composite silicon carbide component, it is beneficial to improve the etching resistance of the silicon carbide component. In practical applications, 6H SiC can be directed toward the plasma.

[0069] In some embodiments, the first silicon carbide layer 110 further includes crystals of a second crystal system, wherein the proportion of crystals of the first crystal system in the first silicon carbide layer 110 is greater than the proportion of crystals of the second crystal system; the second silicon carbide layer 120 further includes crystals of the first crystal system, wherein the proportion of crystals of the second crystal system in the second silicon carbide layer 120 is greater than the proportion of crystals of the first crystal system.

[0070] In some possible embodiments disclosed herein, the first silicon carbide layer 110 and the second silicon carbide layer 120 may both be polycrystalline silicon carbide, and the predominant crystal systems in the first silicon carbide layer 110 and the second silicon carbide layer 120 are different. For example, the first silicon carbide layer 110 includes 3C SiC and 6H SiC, with the proportion of 3C SiC in the first silicon carbide layer 110 being greater than the proportion of 6H SiC, i.e., 3C SiC is the predominant crystal system in the first silicon carbide layer 110; similarly, the second silicon carbide layer 120 includes 6H SiC and 3C SiC, with the proportion of 6H SiC in the second silicon carbide layer 120 being greater than the proportion of 3C SiC, i.e., 6H SiC is the predominant crystal system in the second silicon carbide layer 120. Of course, the first silicon carbide layer 110 or the second silicon carbide layer 120 may also include other types of crystals, for example, the first silicon carbide layer 110 or the second silicon carbide layer 120 may also include a small amount of 2H SiC, 4H SiC, etc. In practical applications, a silicon carbide layer with a main crystal system of 6H SiC (e.g., a second silicon carbide layer 120) can be oriented toward the plasma.

[0071] In some embodiments, the atomic density of the first crystal system and the atomic density of the second crystal system are different. It should be noted that atomic density is also one of the important factors affecting the etching resistance of components. Specifically, the higher the atomic density, the stronger the etching resistance of the crystal. In this embodiment, the first crystal system can be cubic, and the second crystal system can be hexagonal. The atomic density of the hexagonal crystal system is higher than that of the cubic crystal system, meaning that the second silicon carbide layer 120 has stronger etching resistance. In practical applications, the second silicon carbide layer 120 with higher atomic density can be oriented towards the plasma.

[0072] In practical applications, 3C SiC can be prepared by chemical vapor deposition (CVD), while 6H SiC can be prepared by physical vapor transport (PVT). 6H SiC prepared by PVT has large grains, few grain boundaries, high atomic density, and low porosity, and has higher etching resistance.

[0073] It should be noted that the grain size of SiC layers prepared by PVT is much larger than that of SiC layers prepared by CVD. Specifically, the grain size of SiC layers prepared by PVT is generally greater than 0.5 mm, while the grain size of SiC layers prepared by CVD is generally less than 0.5 mm. The larger grain size can reduce the number of grain boundaries in the SiC layer, thereby improving the etching resistance of the SiC layer.

[0074] A connector 130 is disposed between the first silicon carbide layer 110 and the second silicon carbide layer 120, and the connector 130 connects the first silicon carbide layer 110 and the second silicon carbide layer 120 respectively. In one example, the crystal system of the connector 130 is the same as that of the first silicon carbide layer 110; for example, the connector 130 may be 3C SiC. In another example, the crystal system of the connector 130 is the same as that of the second silicon carbide layer 120; for example, the connector 130 may be 6H SiC. In yet another example, the portion of the connector 130 near the first silicon carbide layer 110 has the same crystal system as the first silicon carbide layer 110, and the other portion of the connector 130 near the second silicon carbide layer 120 has the same crystal system as the second silicon carbide layer 120; that is, the connector 130 may include both 3C SiC and 6H SiC.

[0075] In some possible embodiments of this disclosure, a connector 130 is provided between the first silicon carbide layer 110 and the second silicon carbide layer 120. The connector 130 can connect the first silicon carbide layer 110 (e.g., 3C SiC) and the second silicon carbide layer 120 (e.g., 6H SiC) with different crystal systems, which is beneficial to improving the etching resistance of the component 100. In practical applications, 6H SiC can be set as the plasma etching surface, that is, the silicon carbide layer with the main crystal system of 6H SiC faces the plasma.

[0076] In some embodiments, the connector 130 includes a third silicon carbide layer; wherein the crystal system of the third silicon carbide layer is the same as that of the first silicon carbide layer, or the crystal system of the third silicon carbide layer is the same as that of the second silicon carbide layer.

[0077] It should be noted that the connector 130 can be a single film layer or a composite film layer. In this embodiment, the connector 130 is a single film layer, namely the third silicon carbide layer. The third silicon carbide layer connects to the first silicon carbide layer 110 and the second silicon carbide layer 120. The crystal system of the third silicon carbide layer can be the same as that of the first silicon carbide layer 110 or the second silicon carbide layer 120. For example, both the third silicon carbide layer and the first silicon carbide layer 110 are 3C SiC, which is more conducive to the lattice matching between the third silicon carbide layer and the first silicon carbide layer 110, thus improving the bonding strength between the first silicon carbide layer 110 and the second silicon carbide layer 120. As another example, both the third silicon carbide layer and the second silicon carbide layer 120 are 6H SiC, which not only facilitates the lattice matching between the third silicon carbide layer and the second silicon carbide layer 120 and improves the bonding strength, but also increases the thickness of 6H SiC, further improving the etching resistance of the component 100.

[0078] Figure 3 is a schematic diagram of a cross-section of a component provided in the third embodiment of this disclosure. It should be noted that the same reference numerals are used for the same structures as in the above embodiments, and the same structures can be referred to the relevant descriptions in the above embodiments without further detailed description. This embodiment only describes the different structures in detail. The difference from Figure 2 is that the connector 130 shown in Figure 3 is a composite film layer.

[0079] Referring to FIG3, the connector 130 includes a third silicon carbide layer 131 and a fourth silicon carbide layer 132, wherein the third silicon carbide layer 131 is disposed between the first silicon carbide layer 110 and the fourth silicon carbide layer 132; wherein the crystal system of the third silicon carbide layer 131 is the same as that of the first silicon carbide layer, and the crystal system of the fourth silicon carbide layer 132 is the same as that of the second silicon carbide layer.

[0080] In some possible embodiments of this disclosure, the connector 130 with a composite film layer can be formed by solid-state diffusion. Specifically, at high temperature, the first silicon carbide layer 110 diffuses toward the second silicon carbide layer 120, thereby forming a third silicon carbide layer 131 at the surface where the first silicon carbide layer 110 and the second silicon carbide layer 120 contact; the second silicon carbide layer 120 diffuses toward the first silicon carbide layer 110, thereby forming a fourth silicon carbide layer 132 at the surface where the second silicon carbide layer 120 and the first silicon carbide layer 110 contact. Therefore, the third silicon carbide layer 131 is disposed between the first silicon carbide layer 110 and the fourth silicon carbide layer 132. The crystal system of the third silicon carbide layer 131 is the same as that of the first silicon carbide layer, and the crystal system of the fourth silicon carbide layer 132 is the same as that of the second silicon carbide layer. Here, the temperature range for solid-state diffusion is 1600°C to 2300°C.

[0081] In some embodiments, the first silicon carbide layer 110 and the third silicon carbide layer 131 are both cubic crystal systems, that is, both the first silicon carbide layer 110 and the third silicon carbide layer 131 are 3C SiC; the second silicon carbide layer 120 and the fourth silicon carbide layer 132 are both hexagonal crystal systems, that is, both the second silicon carbide layer 120 and the fourth silicon carbide layer 132 are 6H SiC. In this embodiment, the surface of the second silicon carbide layer 120 that is relatively far away from the first silicon carbide layer 110 can be designated as the plasma etching surface, that is, the second silicon carbide layer 120 faces the plasma.

[0082] In other embodiments, the first silicon carbide layer 110 and the third silicon carbide layer 131 are both hexagonal, meaning both are 6H SiC; the second silicon carbide layer 120 and the fourth silicon carbide layer 132 are both cubic, meaning both are 3C SiC. In this embodiment, the surface of the first silicon carbide layer 110 that is relatively far from the second silicon carbide layer 120 can be designated as the plasma etching surface, meaning the first silicon carbide layer 110 faces the plasma.

[0083] In some embodiments, the density of the third silicon carbide layer 131 is less than the density of the first silicon carbide layer 110; the density of the fourth silicon carbide layer 132 is less than the density of the second silicon carbide layer 120. As mentioned above, since the third silicon carbide layer 131 is formed by solid-phase diffusion of the first silicon carbide layer 110, and the fourth silicon carbide layer 132 is formed by solid-phase diffusion of the second silicon carbide layer 120, the density of the third silicon carbide layer 131 is less than the density of the first silicon carbide layer 110; and the density of the fourth silicon carbide layer 132 is less than the density of the second silicon carbide layer 120. In some possible embodiments of this disclosure, the connector 130 can be formed at the contact interface of the first silicon carbide layer 110 and the second silicon carbide layer 120 by solid-phase diffusion, which not only achieves lattice matching but also simplifies the process.

[0084] Figure 4 is a schematic diagram of a cross-section of a component according to the fourth embodiment of this disclosure. It should be noted that the same structures shown in Figure 4 continue to use the same reference numerals as those in the above embodiments, and the same structures can be referred to the relevant descriptions in the above embodiments, and will not be described in detail again. This embodiment only provides detailed descriptions of different structures.

[0085] Referring to FIG4, the first silicon carbide layer 110 includes a stepped portion on the side facing the second silicon carbide layer 120. The stepped portion has a lower stepped surface S1, an upper stepped surface S2, and a stepped side surface S3. The stepped side surface S3 connects the lower stepped surface S1 and the upper stepped surface S2. A connector 130 covers the lower stepped surface S1, the upper stepped surface S2, and the stepped side surface S3. The second silicon carbide layer 120 covers the connector 130. It is understood that in some possible embodiments of this disclosure, the second silicon carbide layer 120 may be a complete silicon carbide layer, and the second silicon carbide layer 120 is conformally bonded to the first silicon carbide layer 110 through the connector 130. Therefore, the component 100 connected by the connector 130 has better quality.

[0086] Figure 5 is a schematic diagram of a cross-section of a component according to the fifth embodiment of this disclosure. It should be noted that the same structures shown in Figure 5 continue to use the same reference numerals as those in the above embodiments, and the same structures can be referred to the relevant descriptions in the above embodiments, without further detailed description. This embodiment only provides detailed descriptions of different structures.

[0087] Referring to FIG5, the second silicon carbide layer 120 includes: a first portion 121, a second portion 122, and a third portion 123; the first portion 121 covers the lower step surface S1 and a portion of the step side surface S3 relatively close to the lower step surface S1; the second portion 122 covers the upper step surface S2; the third portion 123 covers another portion of the step side surface S3 relatively close to the upper step surface S2 and the side surface of the second portion 122; wherein, the connector 130 extends between the first portion 121 and the third portion 123 and between the second portion 122 and the third portion 123. It is understood that in some possible embodiments of this disclosure, multiple portions can be spliced ​​on the first silicon carbide layer 110 to form the second silicon carbide layer 120, and the connector 130 extends to the splicing points of the multiple portions.

[0088] In the embodiment shown in Figure 4, a thicker second silicon carbide layer 120 is required, and it is not easy to process. In the embodiment shown in Figure 5, the second silicon carbide layer 120 is formed by splicing multiple parts on the first silicon carbide layer 110. The position of the connector 130 can be arbitrary. When the component 100 is subjected to top-down etching gas, the splicing seam is not easily affected. This not only makes the bonding strength at the splicing seam better, but also makes the component 100 easier to process and reduces the manufacturing cost.

[0089] In some embodiments, the thickness of the third portion 123 in the horizontal direction is greater than or equal to the thickness of the first portion 121 in the vertical direction, and the thickness of the third portion 123 in the horizontal direction is greater than or equal to the thickness of the second portion 122 in the vertical direction. Since the third portion 123 is more resistant to plasma etching, the thickness of the third portion 123 in the horizontal direction can be designed to be thicker. This not only improves the etching resistance of the component 100 but also extends the service life of the component 100.

[0090] In practical applications, the first part 121, the second part 122 and the third part 123 can be spliced ​​together to form the second silicon carbide layer 120, and then the first silicon carbide layer 110 and the spliced ​​second silicon carbide layer 120 can be connected; or, the first part 121, the second part 122 and the third part 123 can be connected to different step surfaces of the step portion respectively.

[0091] In some embodiments, at least one of the first silicon carbide layer 110 and the second silicon carbide layer 120 is a recycled silicon carbide layer. Taking a focusing ring as an example, two silicon carbide focusing rings can be connected to form a composite silicon carbide focusing ring, wherein at least one of the two silicon carbide focusing rings is a recycled focusing ring. In some possible embodiments of this disclosure, since at least one of the first silicon carbide layer 110 and the second silicon carbide layer 120 is a recycled silicon carbide layer, not only can the recycling rate of silicon carbide components be improved, but production costs can also be reduced.

[0092] In one example, the first silicon carbide layer 110 is a recycled silicon carbide layer, and the second silicon carbide layer 120 is a newly manufactured silicon carbide layer. In another example, the first silicon carbide layer 110 is a newly manufactured silicon carbide layer, and the second silicon carbide layer 120 is a recycled silicon carbide layer. In yet another example, both the first silicon carbide layer 110 and the second silicon carbide layer 120 are recycled silicon carbide layers. In some possible embodiments of this disclosure, the recycled silicon carbide layer used refers to a used silicon carbide component that has been recycled through processes such as cleaning and grinding, while the newly manufactured silicon carbide layer refers to a newly prepared and unused silicon carbide component.

[0093] In some embodiments, the first silicon carbide layer 110 and the second silicon carbide layer 120 are both annular structures, and the component 100 is also annular. For example, the projections of the first silicon carbide layer 110, the second silicon carbide layer 120, and the component 100 onto the horizontal plane are all annular. Of course, the projections of the first silicon carbide layer 110, the second silicon carbide layer 120, and the component 100 onto the horizontal plane can also be other regular or irregular geometric shapes, and this disclosure does not impose any special limitations on this.

[0094] In some embodiments, component 100 has a planar structure. In other embodiments, component 100 has a stepped structure.

[0095] Based on the above-described components, this disclosure provides a method for manufacturing components of a semiconductor processing equipment, which can be used to form the components in any of the above embodiments.

[0096] Figure 6 is a flowchart of a method for manufacturing a component according to some possible embodiments of this disclosure. It should be noted that the steps shown in Figure 6 are not exclusive, and other steps may be performed before, after, or between any of the steps shown; the order of the steps shown in Figure 6 can be adjusted according to actual needs. Referring to Figure 6, the manufacturing method includes the following steps:

[0097] Step S210: Form the first silicon carbide layer;

[0098] Step S220: A second silicon carbide layer is formed on one side of the first silicon carbide layer, wherein the number of grain boundaries in the second silicon carbide layer is different from the number of grain boundaries in the first silicon carbide layer.

[0099] In some possible embodiments disclosed herein, by forming a second silicon carbide layer with a different number of grain boundaries on one side of the first silicon carbide layer, the first silicon carbide layer and the second silicon carbide layer can form a composite silicon carbide component, which is beneficial to improving the etching resistance of the silicon carbide component.

[0100] In some embodiments, the manufacturing method further includes forming a connector between a first silicon carbide layer and a second silicon carbide layer, wherein the connector connects the first silicon carbide layer and the second silicon carbide layer respectively. In some possible embodiments of this disclosure, by forming a connector between the first silicon carbide layer and the second silicon carbide layer, the connector can connect a first silicon carbide layer (e.g., 3C SiC) and a second silicon carbide layer (e.g., 6H SiC) with different numbers of grain boundaries, which is beneficial for improving the etching resistance of silicon carbide components.

[0101] In some embodiments, forming a connector between the first silicon carbide layer and the second silicon carbide layer includes: coating a connecting material between the first silicon carbide layer and the second silicon carbide layer; performing a first heat treatment on the first silicon carbide layer and the second silicon carbide layer coated with the connecting material, causing the connecting material to react and form a third silicon carbide layer to form the connector; wherein the crystal system of the third silicon carbide layer is the same as the crystal system of the first silicon carbide layer, or the crystal system of the third silicon carbide layer is the same as the crystal system of the second silicon carbide layer.

[0102] In some embodiments, the thickness of the connecting material is from 0.05 mm to 1 mm, and the thickness of the connecting material is 0.05 mm, 0.06 mm, 0.07 mm, 0.08 mm, 0.09 mm or 1 mm. Of course, the thickness of the connecting material is not limited to the above examples, and the thickness of the connecting material can be any value from 0.05 mm to 1 mm, which is not limited in this disclosure.

[0103] In some embodiments, the temperature range of the first heat treatment is from 900°C to 2500°C, for example, the temperature of the first heat treatment is 900°C, 1000°C, 1300°C, 1600°C, 2000°C, or 2500°C. Of course, the temperature of the first heat treatment is not limited to the above examples, and the temperature of the first heat treatment can also be any temperature or temperature range from 900°C to 2500°C, and this disclosure does not limit it.

[0104] In some embodiments, the connecting material includes a reactive connecting material and a precursor connecting material. It is understood that the type of connecting material determines the connection method of the connector. For example, when the connecting material is a reactive connecting material, the connection method of the connector is reactive connection; when the connecting material is a precursor connecting material, the connection method of the connector is precursor connection.

[0105] Taking reactive bonding material as an example, the reactive bonding material is uniformly coated between the first silicon carbide layer and the second silicon carbide layer to form an assembly. After coating and bonding, the assembly is cured at 100°C to 300°C in an air atmosphere. The cured assembly is then subjected to reactive bonding at 1400°C to 1700°C in a vacuum atmosphere to form the connector and components shown in Figure 1. In this example, the reactive bonding material includes at least one of carbon powder, silicon powder, silicon carbide powder, and organic binder. The reactive bonding material can be liquid, paste, or semi-solid.

[0106] Taking the precursor connecting material as an example, the precursor connecting material is uniformly coated between the first silicon carbide layer and the second silicon carbide layer to form an assembly. After coating and bonding, the assembly is cured at 100°C to 300°C in an air atmosphere. The cured assembly is then subjected to precursor bonding at 900°C to 1300°C in an argon or vacuum atmosphere, thereby forming the connector and components shown in Figure 1. In this example, the precursor connecting material includes at least one of silane precursors and organic solvents, and the precursor connecting material can be liquid, paste, or semi-solid.

[0107] In some embodiments, forming a connector between the first silicon carbide layer and the second silicon carbide layer includes: stacking the first silicon carbide layer and the second silicon carbide layer such that the first silicon carbide layer and the second silicon carbide layer are in contact; performing a second heat treatment on the stacked first silicon carbide layer and the second silicon carbide layer such that the first silicon carbide layer diffuses toward the second silicon carbide layer to form a third silicon carbide layer and the second silicon carbide layer diffuses toward the first silicon carbide layer to form a fourth silicon carbide layer, wherein the third silicon carbide layer and the fourth silicon carbide layer constitute the connector; wherein the crystal system of the third silicon carbide layer is the same as the crystal system of the first silicon carbide layer, and the crystal system of the fourth silicon carbide layer is the same as the crystal system of the second silicon carbide layer.

[0108] In some embodiments, the temperature range of the second heat treatment is 1600°C to 2300°C, for example, the temperature of the second heat treatment is 1600°C, 1700°C, 1800°C, 1900°C, 2000°C, 2100°C, 2200°C, or 2300°C. Of course, the temperature of the second heat treatment is not limited to the above examples; the temperature of the second heat treatment can also be any temperature or temperature range from 1600°C to 2300°C. In a specific example, the temperature range of the second heat treatment is 1800°C to 2100°C.

[0109] For example, a first silicon carbide layer and a second silicon carbide layer are stacked to form an assembly. The assembly is then placed in an argon or vacuum atmosphere at a temperature of 1800°C to 2100°C and a pressure of 100 MPa to 300 MPa, allowing the first and second silicon carbide layers to connect via grain boundaries and atomic diffusion, thereby forming the connector and components shown in Figure 2. In this example, the connecting material between the first and second silicon carbide layers can be omitted.

[0110] In some embodiments, forming a connector between the first silicon carbide layer and the second silicon carbide layer includes: placing the first silicon carbide layer in a reaction chamber; introducing a first reaction gas into the reaction chamber to deposit the connector on one side of the first silicon carbide layer; step S220 includes: introducing a second reaction gas into the reaction chamber to deposit the second silicon carbide layer on the side of the connector relatively away from the first silicon carbide layer; wherein both the first reaction gas and the second reaction gas include carbon and silicon elements, and the component ratio of carbon and silicon elements in the first reaction gas is greater than the component ratio of carbon and silicon elements in the second reaction gas.

[0111] In some embodiments, the temperature range for depositing the connector and the second silicon carbide layer is 900°C to 1500°C. For example, the temperature for depositing the connector and the second silicon carbide layer is 900°C, 1000°C, 1100°C, 1200°C, 1300°C, 1400°C, or 1500°C. Of course, the temperature for depositing the connector and the second silicon carbide layer is not limited to the above examples, and can be any temperature or temperature range from 900°C to 1500°C, which is not limited in this disclosure.

[0112] In some embodiments, the first and second reactant gases include at least one of trichloromethylsilane, tetrachlorosilane, and alkanes. Alkanes include methane (CH4), acetylene (C2H2), ethylene (C2H4), propane (C3H8), etc. In this embodiment, both the first and second reactant gases include reactant gases containing carbon and silicon elements, but the carbon and silicon component ratios in the first and second reactant gases are different.

[0113] Taking trichloromethylsilane gas as a single-source reactant gas as an example, a first silicon carbide layer is placed in a reaction chamber. The reaction temperature is 900°C to 1500°C, and the atmosphere is filled with argon and nitrogen. Trichloromethylsilane with a first component ratio of carbon and silicon is introduced into the reaction chamber, thereby forming a connector on the surface of the first silicon carbide layer. Then, trichloromethylsilane with a second component ratio of carbon and silicon is introduced into the reaction chamber, thereby forming a second silicon carbide layer on the surface of the connector, where the first component ratio is greater than the second component ratio. In this example, the thickness of the connector and the second silicon carbide layer can be adjusted by controlling the concentration and time of the introduced reactant gas.

[0114] In the above example, a 6H SiC silicon carbide layer can be used as the deposition substrate. By controlling the ratio of carbon to silicon in the reactive gas, a connector and a second silicon carbide layer can be sequentially formed on the surface of the 6H SiC silicon carbide layer. For example, by first controlling the ratio of carbon to silicon in the reactive gas to be greater than 1:1, 6H SiC can be formed, i.e., the connector is 6H SiC; then, by controlling the ratio of carbon to silicon in the reactive gas to 1:1 or close to 1:1, 3C-SiC can be formed, i.e., the second silicon carbide layer is 3C-SiC. In this way, not only can the lattice mismatch between the first and second silicon carbide layers be adjusted to improve the bonding strength, but the connector also increases the thickness of the 6H SiC, further improving the etching resistance of the component.

[0115] In some embodiments, at least one of the first silicon carbide layer and the second silicon carbide layer is a recycled silicon carbide layer; the manufacturing method further includes: performing a surface pretreatment on the recycled silicon carbide layer; wherein the surface pretreatment includes at least one of oxidation, cleaning, and grinding.

[0116] For example, before joining the first silicon carbide layer and the second silicon carbide layer, both layers can undergo surface pretreatment. For instance, the joining surfaces of the first and second silicon carbide layers can be subjected to processes such as oxidation, cleaning, and grinding before joining, thereby reducing the surface roughness and surface impurity content of the first and second silicon carbide layers.

[0117] It should be noted that after plasma etching and multiple processing steps, the bonding surfaces of recycled silicon carbide components have a large number of pores and defects, which will affect the reliability of the remanufactured products. In some possible embodiments of this disclosure, surface pretreatment of the recycled silicon carbide components can reduce the surface roughness and surface impurity content of the recycled silicon carbide components, thereby improving the bonding strength and reliability of the first silicon carbide layer and the second silicon carbide layer.

[0118] In some embodiments, the surface roughness of the pretreated recycled silicon carbide layer is less than 0.5 μm, and the surface impurity content of the pretreated recycled silicon carbide layer is less than 0.1 ppm.

[0119] In practical applications, after the first silicon carbide layer and the second silicon carbide layer are joined, the joined product can be subjected to processes such as oxidation, cleaning, grinding, and polishing to obtain parts with high etching resistance.

[0120] Based on the aforementioned components, this disclosure provides some possible embodiments of a semiconductor processing apparatus, which includes the components described in any of the above embodiments. The semiconductor processing apparatus may be the aforementioned thin film deposition apparatus or etching apparatus.

[0121] The above description is merely a specific embodiment of this disclosure, but the scope of protection of this disclosure is not limited thereto. Any changes or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this disclosure should be included within the scope of protection of this disclosure. Industrial applicability

[0122] This disclosure provides a component for a semiconductor processing equipment and a method for manufacturing the same. In the semiconductor processing equipment component provided in this disclosure, by including a first silicon carbide layer and a second silicon carbide layer with different numbers of grain boundaries, a composite silicon carbide component can be formed, which is beneficial for improving the etching resistance of the component.

Claims

1. A component of a semiconductor processing equipment, comprising: First silicon carbide layer (110); A second silicon carbide layer (120) is disposed on one side of the first silicon carbide layer (110), wherein the number of grain boundaries of the second silicon carbide layer (120) is different from the number of grain boundaries of the first silicon carbide layer (110).

2. The component according to claim 1, wherein, The first silicon carbide layer (110) comprises a first crystal system, and the second silicon carbide layer (120) comprises a second crystal system, wherein the second crystal system is different from the first crystal system.

3. The component according to claim 2, wherein, The first silicon carbide layer (110) further includes crystals of the second crystal system, wherein the proportion of crystals of the first crystal system in the first silicon carbide layer (110) is greater than the proportion of crystals of the second crystal system; The second silicon carbide layer (120) also includes crystals of the first crystal system, wherein the proportion of crystals of the second crystal system in the second silicon carbide layer (120) is greater than the proportion of crystals of the first crystal system.

4. The component according to claim 2 or 3, wherein, The atomic density of the crystal in the first crystal system is different from that of the crystal in the second crystal system.

5. The component according to any one of claims 2 to 4, wherein, One of the first crystal system and the second crystal system is a cubic crystal system, and the other of the first crystal system and the second crystal system is a hexagonal crystal system.

6. The component according to any one of claims 1 to 5, wherein, The components also include: A connector (130) is disposed between the first silicon carbide layer (110) and the second silicon carbide layer (120), wherein the connector (130) connects the first silicon carbide layer (110) and the second silicon carbide layer (120) respectively.

7. The component according to claim 6, wherein, The connector (130) includes a third silicon carbide layer (131), wherein the crystal system of the third silicon carbide layer (131) is the same as that of the first silicon carbide layer (110), or the crystal system of the third silicon carbide layer (131) is the same as that of the second silicon carbide layer (120).

8. The component according to claim 6, wherein, The connector (130) includes a third silicon carbide layer (131) and a fourth silicon carbide layer (132), wherein the third silicon carbide layer (131) is disposed between the first silicon carbide layer (110) and the fourth silicon carbide layer (132); wherein the crystal system of the third silicon carbide layer (131) is the same as that of the first silicon carbide layer (110), and the crystal system of the fourth silicon carbide layer (132) is the same as that of the second silicon carbide layer (120).

9. The component according to claim 8, wherein, The density of the third silicon carbide layer (131) is less than that of the first silicon carbide layer (110); the density of the fourth silicon carbide layer (132) is less than that of the second silicon carbide layer (120).

10. The component according to any one of claims 6 to 9, wherein, The first silicon carbide layer includes a stepped portion on the side facing the second silicon carbide layer (120), the stepped portion having a lower stepped surface (S1), an upper stepped surface (S2), and a stepped side surface (S3), the stepped side surface (S3) connecting the lower stepped surface (S1) and the upper stepped surface (S2); the second silicon carbide layer (120) includes: The first part (121) covers the lower step surface (S1) and a portion of the step side surface (S3) relatively close to the lower step surface (S1); The second part (122) covers the upper step surface (S2); The third part (123) covers another part of the step side (S3) and the side of the second part (122) that are relatively close to the upper step surface (S2); The connector (130) extends between the first part (121) and the third part (123) and between the second part (122) and the third part (123).

11. The component according to claim 10, wherein, The thickness of the third part (123) in the horizontal direction is greater than or equal to the thickness of the first part (121) in the vertical direction, and the thickness of the third part (123) in the horizontal direction is greater than or equal to the thickness of the second part (122) in the vertical direction.

12. The component according to any one of claims 1 to 11, wherein, At least one of the first silicon carbide layer (110) and the second silicon carbide layer (120) is a recycled silicon carbide layer.

13. The component according to any one of claims 1 to 12, wherein, The component has a planar structure, or the component has a stepped structure.

14. A method for manufacturing a component of a semiconductor processing equipment, comprising: A first silicon carbide layer (110) is formed; A second silicon carbide layer (120) is formed on one side of the first silicon carbide layer (110), wherein the number of grain boundaries of the second silicon carbide layer (120) is different from the number of grain boundaries of the first silicon carbide layer (110).

15. The manufacturing method according to claim 14, wherein, The manufacturing method further includes: A connector (130) is formed between the first silicon carbide layer (110) and the second silicon carbide layer (120), wherein the connector (130) connects the first silicon carbide layer (110) and the second silicon carbide layer (120) respectively.

16. The manufacturing method according to claim 15, wherein, The formation of a connector (130) between the first silicon carbide layer (110) and the second silicon carbide layer (120) includes: A bonding material is coated between the first silicon carbide layer (110) and the second silicon carbide layer (120); A first heat treatment is performed on the first silicon carbide layer (110) and the second silicon carbide layer (120) coated with the connecting material, so that the connecting material reacts to form a third silicon carbide layer (131) to form the connector (130); wherein the crystal system of the third silicon carbide layer (131) is the same as that of the first silicon carbide layer (110), or the crystal system of the third silicon carbide layer (131) is the same as that of the second silicon carbide layer (120).

17. The manufacturing method according to claim 16, wherein, The thickness of the connecting material is 0.05 mm to 1 mm.

18. The manufacturing method according to claim 16 or 17, wherein, The temperature range of the first heat treatment is 900°C to 2500°C; the connecting material includes at least one of carbon powder, silicon powder, silicon carbide powder, organic binder, silane precursor, and organic solvent.

19. The manufacturing method according to claim 15, wherein, The formation of a connector (130) between the first silicon carbide layer (110) and the second silicon carbide layer (120) includes: The first silicon carbide layer (110) and the second silicon carbide layer (120) are stacked so that the first silicon carbide layer (110) and the second silicon carbide layer (120) are in contact; A second heat treatment is performed on the stacked first silicon carbide layer (110) and second silicon carbide layer (120) such that the first silicon carbide layer (110) diffuses toward the second silicon carbide layer (120) to form a third silicon carbide layer (131) and the second silicon carbide layer (120) diffuses toward the first silicon carbide layer (110) to form a fourth silicon carbide layer (132), the third silicon carbide layer (131) and the fourth silicon carbide layer (132) constitute the connector (130); wherein the crystal system of the third silicon carbide layer (131) is the same as the crystal system of the first silicon carbide layer (110), and the crystal system of the fourth silicon carbide layer (132) is the same as the crystal system of the second silicon carbide layer (120).

20. The manufacturing method according to claim 19, wherein, The temperature range for the second heat treatment is 1600°C to 2300°C.

21. The manufacturing method according to claim 15, wherein, The formation of a connector (130) between the first silicon carbide layer (110) and the second silicon carbide layer (120) includes: The first silicon carbide layer (110) is placed in the reaction chamber; A first reaction gas is introduced into the reaction chamber to deposit the connector (130) on one side of the first silicon carbide layer (110); The formation of a second silicon carbide layer (120) on one side of the first silicon carbide layer includes: A second reaction gas is introduced into the reaction chamber to deposit the second silicon carbide layer (120) on the side of the connector (130) that is relatively far away from the first silicon carbide layer (110); wherein the first reaction gas and the second reaction gas both include carbon and silicon elements, and the composition ratio of the carbon element to the silicon element in the first reaction gas is greater than the composition ratio of the carbon element to the silicon element in the second reaction gas.

22. The manufacturing method according to claim 21, wherein, The temperature range for depositing the connector (130) and the second silicon carbide layer (120) is 900°C to 1500°C; the first and second reaction gases include at least one of trichloromethylsilane, tetrachlorosilane, and alkanes.

23. The manufacturing method according to any one of claims 14 to 22, wherein, At least one of the first silicon carbide layer (110) and the second silicon carbide layer (120) is a recycled silicon carbide layer; the manufacturing method further includes: The recycled silicon carbide layer is subjected to surface pretreatment; wherein the surface pretreatment includes at least one of oxidation, cleaning, and grinding.

24. The manufacturing method according to claim 23, wherein, The surface roughness of the recycled silicon carbide layer after surface pretreatment is less than 0.5 μm, and the surface impurity content of the recycled silicon carbide layer after surface pretreatment is less than 0.1 ppm.

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