Vacuum deposition device capable of adjusting process gas flow inside reaction chamber

Abstract

The present invention relates to a vacuum deposition device capable of adjusting a process gas flow inside a reaction chamber. The vacuum deposition device comprises: a reaction chamber (100) dividing a reaction space part (110); a stage (200) in which objects (W) to be deposited are arranged to be spaced apart from each other and stacked in the height direction in the reaction space part (110); a gas supply unit (300) which is disposed on the outer circumferential part of the stage (200) in the height direction and supplies process gas to the objects (W) to be deposited through a plurality of supply holes (310) formed to be spaced along the height direction; and a gas discharge unit (400) in which at least one gas discharge tower (410) formed in a hollow structure is disposed on the outer circumferential part of the stage (200), a plurality of discharge holes (411) being formed in the gas discharge tower (410) to be spaced apart from each other along the height direction, wherein the supply holes (310) of the gas supply unit (300) and the discharge holes (411) of the discharge tower (410) are arranged to face each other.

Description

Vacuum deposition device capable of controlling process gas flow inside the reaction chamber

[0001] The present invention relates to a vacuum deposition apparatus. Specifically, it relates to a vacuum deposition apparatus capable of controlling the flow of process gas inside a reaction chamber.

[0002] A vacuum deposition device is a device used to vaporize raw materials in a high vacuum environment, supply them as process gas to a reaction chamber, and coat (deposit) them in the form of a thin film on the surface of substrates, wafers, etc., placed in the reaction space of the reaction chamber.

[0003] CVD and ALD, which are representative examples of vacuum deposition devices and belong to the Chemical Vapor Deposition (CVD) family, can be explained as follows. CVD (Chemical Vapor Deposition) is a deposition technology that forms a solid thin film on a substrate using chemical reactions. ALD (Atomic Layer Deposition) is a specialized form of CVD that precisely stacks thin films at the atomic layer level.

[0004] For example, general batch ALD typically carries out the ALD reaction at high temperatures inside a furnace-type reactor, similar to CVD. Furthermore, since deposition is performed by loading, for instance, about 100 substrates at once to increase productivity, a large amount of source and gas is required. Consequently, as long as high pressure is maintained, the flow of the source and gas, as well as the direction or vortex of the gas caused by pumping, are not particularly critical.

[0005] However, as mini-batch ALD gains prominence, there is a demand for high-quality thin films that utilize small substrate loading, low-temperature deposition, and ALD reactions rather than CVD; consequently, sensitivity to process conditions is increasing to ensure material reactivity, uniformity, and reproducibility.

[0006] As the substrate is loaded into the cassette and the reaction section is restricted by a dome-shaped cover, the direction of the gases sprayed from the gas nozzle changes as the substrate rotates, and as a large amount of gas is exhausted, a vortex of gas is formed at the exhaust port inlet, causing a problem in which a uniform gas flow cannot always be created.

[0007] The vacuum deposition apparatus capable of controlling the flow of process gas inside the reaction chamber according to the present invention has the following problem to be solved.

[0008] First, the process gas is allowed to flow horizontally through the spacing between each stacked, spaced-apart deposition target.

[0009] Second, the gas supply unit and the gas discharge unit are positioned opposite each other through the spacing between each deposition target to facilitate horizontal flow.

[0010] Third, we intend to control the process gas flow inside the reaction chamber by controlling the discharge control valve of the gas discharge tower.

[0011] Fourth, the gas discharge tower is divided into sections, and the discharge control valve is controlled for each section so that the process gas flows in the desired direction inside the reaction chamber.

[0012] The problems solved by the present invention are not limited to those mentioned above, and other problems not mentioned will be clearly understood by those skilled in the art from the description below.

[0013] The present invention relates to a vacuum deposition apparatus capable of controlling the flow of process gas inside a reaction chamber, comprising: a reaction chamber partitioning a reaction space; a stage for stacking and spaced-apart deposition targets in the height direction within the reaction space; a gas supply unit for supplying process gas to deposition targets through a plurality of supply holes spaced apart along the height direction and positioned in the outer circumference of the stage in the height direction; and a gas discharge unit comprising at least one gas discharge tower formed with a hollow structure positioned in the outer circumference of the stage, wherein a plurality of discharge holes spaced apart along the height direction are formed in the gas discharge tower, wherein the supply holes of the gas supply unit and the discharge holes of the gas discharge tower are positioned opposite each other.

[0014] In the present invention, the stage is rotatable.

[0015] In the present invention, the process gas supplied from the gas supply unit can flow through each spaced-apart space of the deposition target.

[0016] In the present invention, the supply hole and the discharge hole may be arranged opposite each other through the respective spaced-apart space.

[0017] In the present invention, in the gas discharge section, a discharge control valve is installed on one side of the gas discharge tower, and the gas discharge tower can be connected to a discharge pump through the discharge control valve.

[0018] In the present invention, the discharge control valve may be partially opened or closed.

[0019] In the present invention, a pressure sensor may be placed in the internal space of the gas discharge tower.

[0020] In the present invention, a discharge control valve is disposed on one side of the gas discharge tower and a pressure sensor is disposed in the internal space, and a control unit may be additionally provided to control the opening and closing of the discharge control valve of the gas discharge tower by comparing each pressure value with each other when the pressure values ​​measured by each pressure sensor are input at preset time intervals.

[0021] In the present invention, when a plurality of gas discharge towers are arranged, the control unit calculates the average pressure of each input pressure value and controls the discharge control valve of a gas discharge tower determined to be higher than the average pressure to be partially or completely closed according to a preset standard, thereby controlling the internal pressure of the controlled gas discharge tower to reach the average pressure.

[0022] In the present invention, when at least three gas discharge towers are arranged and each gas discharge tower is divided into a plurality of sections along the outer circumference of the stage, the control unit may partially or completely close the discharge control valves of each gas discharge tower belonging to each section.

[0023] In the present invention, the plurality of sections may be divided into a first section partitioned at one end, a second section partitioned in the middle, and a third section partitioned at the other end.

[0024] In the present invention, the control unit can partially or completely close the discharge control valves of each gas discharge tower belonging to at least two sections.

[0025] In the present invention, the gas discharge tower comprises a plurality of unit towers that are independently controlled and stacked in the height direction, and a discharge control valve is disposed on one side of each unit tower and a pressure sensor is disposed in the internal space. A control unit may be additionally provided to control the opening and closing of the discharge control valves of each unit tower by comparing the pressure values ​​measured by each pressure sensor with each other when the pressure values ​​are input at preset time intervals.

[0026] In the present invention, the control unit calculates the average pressure of each input pressure value and controls the discharge control valve of a unit tower determined to be higher than the average pressure to close part or all according to a preset standard, thereby controlling the internal pressure of the controlled unit tower to reach the average pressure.

[0027] In the present invention, when at least three gas discharge towers are arranged and each gas discharge tower is divided into a plurality of sections along the outer circumference of the stage, the control unit can control the discharge control valves of each unit tower included in each gas discharge tower belonging to each section to be partially or entirely closed.

[0028] In the present invention, the plurality of sections may be divided into a first section partitioned at one end, a second section partitioned in the middle, and a third section partitioned at the other end.

[0029] In the present invention, the control unit can partially or completely close the discharge control valves of each unit tower belonging to at least two sections.

[0030] In the present invention, a cover portion may be further provided to cover the reaction space portion, the gas supply portion, and the gas discharge portion so as to seal them.

[0031] The vacuum deposition apparatus capable of controlling the flow of process gas inside the reaction chamber according to the present invention has the following effects.

[0032] First, through the spacing between each stacked and spaced deposition target, there is an effect of the process gas flowing horizontally.

[0033] Second, by positioning the gas supply section and the gas discharge section opposite each other through the spacing between each deposition target, it has the effect of facilitating horizontal flow.

[0034] Third, by controlling the discharge control valve of the gas discharge tower, it has the effect of controlling the flow of process gas inside the reaction chamber.

[0035] Fourth, by dividing the gas discharge tower into sections and controlling the discharge control valve for each section, the process gas can flow in the desired direction inside the reaction chamber.

[0036] The effects of the present invention are not limited to those mentioned above, and other unmentioned effects will be clearly understood by those skilled in the art from the description below.

[0037] FIG. 1 shows an embodiment in which a gas discharge tower is provided in a vacuum deposition apparatus capable of controlling process gas flow inside a reaction chamber according to the present invention.

[0038] FIG. 2 is a partial enlarged view of the reaction space (110), stage (200), gas supply section (300) and gas discharge section (400) in FIG. 1.

[0039] Figure 3 shows a cross-sectional view of the vacuum deposition apparatus of Figure 1.

[0040] FIG. 4 is a schematic diagram showing process gas flowing into the spaced-apart space of each deposition target (W). It shows that the supply port (310) of the gas supply unit (300) and the discharge port (411) of the gas discharge tower (410) of the gas discharge unit (400) are arranged opposite each other through the spaced-apart space.

[0041] FIG. 5 shows an embodiment in which six gas discharge towers (410) are arranged.

[0042] FIG. 6 shows an embodiment in which a deposition target (W) is spaced apart and stacked on the stage (200) of FIG. 5.

[0043] FIG. 7 shows an embodiment in which a cover portion (800) is further provided to cover the reaction space portion (110), gas supply portion (300), and gas discharge portion (400) in FIG. 6 so as to seal them.

[0044] FIG. 8 is a schematic diagram showing a functional operation in which seven gas discharge towers (410) are arranged, a pressure sensor (430) is arranged inside the gas discharge tower (410), the measured pressure value is transmitted to a control unit (600), and the control unit (600) controls a discharge control valve (412). The discharge control valve (412) in FIG. 8 represents an embodiment of a valve that is fully open or closed.

[0045] FIG. 9 shows an embodiment in which the discharge control valve (412) in FIG. 8 is partially opened or closed.

[0046] FIG. 10 shows an embodiment in which seven gas discharge towers (420) are arranged along the outer circumference of a stage (200), divided into a first section (A) corresponding to one end, a second section (B) corresponding to the middle, and a third section (C) corresponding to the other end.

[0047] FIG. 11 illustrates various embodiments in which the discharge control valves of each section of FIG. 10 are opened or closed. FIG. 11a illustrates an embodiment in which the discharge control valves in the first, second, and third sections are open. FIG. 11b illustrates an embodiment in which the discharge control valve in the first section is closed, and the discharge control valves in the second and third sections are open. FIG. 11c illustrates an embodiment in which the discharge control valves in the first and second sections are open, and the discharge control valve in the third section is closed. FIG. 11d illustrates an embodiment in which the discharge control valves in the first and third sections are open, and the discharge control valve in the second section is closed.

[0048] FIG. 12 shows an embodiment in which a gas discharge tower (410) according to the present invention is independently controlled and includes at least two unit towers (410a) (410b) stacked in the height direction.

[0049] The present invention relates to a vacuum deposition apparatus capable of controlling the flow of process gas inside a reaction chamber, comprising: a reaction chamber partitioning a reaction space; a stage for stacking and spaced-apart deposition targets in the height direction within the reaction space; a gas supply unit for supplying process gas to deposition targets through a plurality of supply holes spaced apart along the height direction and positioned in the outer circumference of the stage in the height direction; and a gas discharge unit comprising at least one gas discharge tower formed with a hollow structure positioned in the outer circumference of the stage, wherein a plurality of discharge holes spaced apart along the height direction are formed in the gas discharge tower, wherein the supply holes of the gas supply unit and the discharge holes of the gas discharge tower are positioned opposite each other.

[0050] W: Deposition target

[0051] 100: Reaction chamber

[0052] 110: Reaction space

[0053] 200: Stage

[0054] 300: Gas supply unit

[0055] 310 : Supply line

[0056] 400: Gas exhaust section

[0057] 410: Gas exhaust tower

[0058] 410a, 410b: Unit Tower

[0059] 411 : Exhaust port

[0060] 412: Discharge control valve

[0061] 413: Pressure sensor

[0062] 500 : Gas tank

[0063] 600 : Discharge pump

[0064] 700 : Control unit

[0065] 800 : Cover part

[0066] Hereinafter, embodiments of the present invention are described with reference to the attached drawings so that those skilled in the art can easily implement the present invention. As will be easily understood by those skilled in the art, the embodiments described below may be modified in various forms without departing from the concept and scope of the present invention. Where possible, identical or similar parts are indicated using the same reference numerals in the drawings.

[0067] The technical terms used in this specification are for the reference of specific embodiments only and are not intended to limit the invention. The singular forms used herein include plural forms unless phrases clearly indicate otherwise.

[0068] As used in this specification, the meaning of “comprising” specifies certain characteristics, regions, integers, steps, actions, elements, and / or components, and does not exclude the existence or addition of other specific characteristics, regions, integers, steps, actions, elements, components, and / or groups.

[0069] All terms used herein, including technical and scientific terms, have the same meaning as generally understood by those skilled in the art to which the present invention pertains. Terms defined in advance are further interpreted to have meanings consistent with relevant technical literature and the present disclosure, and are not interpreted in an ideal or highly formal sense unless otherwise defined.

[0070] Expressions regarding direction used in this specification, for example, expressions of front / back / left / right, expressions of up / down, and expressions of longitudinal / transverse directions, may be interpreted by referring to the directions disclosed in the drawings.

[0071]

[0072] The present invention will be described below with reference to the drawings. For reference, the drawings may be partially exaggerated to illustrate the features of the present invention. In such cases, it is preferable to interpret them in light of the entire intent of this specification.

[0073]

[0074] FIG. 1 shows an embodiment of a vacuum deposition apparatus capable of controlling process gas flow inside a reaction chamber according to the present invention, wherein one gas discharge tower is provided. FIG. 2 is a partial enlarged view of the reaction space (110), stage (200), gas supply unit (300), and gas discharge unit (400) in FIG. 1. FIG. 3 shows a cross-sectional view of the vacuum deposition apparatus of FIG. 1.

[0075]

[0076] The present invention is a vacuum deposition apparatus capable of controlling the flow of process gas inside a reaction chamber, comprising: a reaction chamber (100) that partitions a reaction space (110); a stage (200) that arranges a deposition target (W) in a height-spaced stacked arrangement within the reaction space (110); a gas supply unit (300) that supplies process gas to the deposition target (W) through a plurality of supply holes (310) that are arranged in a height-spaced arrangement along the height-spaced arrangement on the outer circumference of the stage (200); and a gas discharge unit (400) in which at least one gas discharge tower (410) formed with a hollow structure is arranged in a hollow arrangement on the outer circumference of the stage (200), and a plurality of discharge holes (411) are formed in a height-spaced arrangement on the gas discharge tower (410), wherein the supply holes (310) of the gas supply unit (300) and the discharge holes (411) of the gas discharge tower (410) are arranged opposite each other.

[0077]

[0078] Below, a stage (200) according to the present invention is described.

[0079] The stage (200) according to the present invention can arrange deposition targets (W) spaced apart and stacked in the height direction within the reaction space (110).

[0080] As shown in FIG. 1, the deposition target (W) can be rapidly placed on the stage (200) in the form of a cartridge that is already stacked and spaced apart.

[0081] In the present invention, the deposition target (W) is a target that can be deposited using a vacuum deposition apparatus, and is preferably a target that can be stacked and spaced apart. For example, a substrate, a wafer, etc. may be applied.

[0082] In the present invention, the stage (200) may be rotatable.

[0083]

[0084]

[0085] Below, a gas supply unit (300) according to the present invention is described.

[0086] The gas supply unit (300) according to the present invention is arranged in the height direction on the outer circumference of the stage (200) and can supply process gas to the deposition target (W) through a plurality of supply holes (310) spaced apart along the height direction.

[0087] The process gas supplied can be, for example, a reaction gas in the case of CVD, and a reaction gas and a purge gas in the case of ALD.

[0088] In the present invention, the process gas supplied from the gas supply unit (300) can flow through each spaced-apart space of the deposition target (W).

[0089] FIG. 4 is a schematic diagram showing process gas flowing into the spaced-apart space of each deposition target (W). It shows that the supply port (310) of the gas supply unit (300) and the discharge port (411) of the gas discharge tower (410) of the gas discharge unit (400) are arranged opposite each other through the spaced-apart space.

[0090] In the present invention, as shown in FIG. 4, the supply hole (310) and the discharge hole (411) can be arranged opposite each other through the respective spaced-apart space.

[0091]

[0092]

[0093] Below, a gas discharge unit (400) according to the present invention is described.

[0094] In the gas discharge unit (400) according to the present invention, at least one gas discharge tower (410) formed with a hollow structure is disposed on the outer circumference of the stage (200), and a plurality of discharge holes (411) may be spaced apart along the height direction in the gas discharge tower (410). (See FIG. 8)

[0095]

[0096] In the present invention, in the gas discharge section (400), a discharge control valve (412) is installed on one side of the gas discharge tower (410), and the gas discharge tower (410) can be connected to a discharge pump (600) through the discharge control valve (412).

[0097]

[0098] In the present invention, the discharge control valve (412) may be partially opened or closed. The discharge control valve (412) of FIG. 8 represents an embodiment of a valve that is fully opened or closed. For example, an on / off valve may be used. FIG. 9 represents an embodiment in which the discharge control valve (412) of FIG. 8 is partially opened or closed. For example, a throttle valve such as an APC or an Auto Pressure Control valve may be used.

[0099]

[0100] In the present invention, a pressure sensor (413) may be placed in the internal space of the gas discharge tower (410).

[0101]

[0102] The following describes an embodiment using a pressure sensor (413).

[0103] The first embodiment illustrates a general embodiment in which a control unit controls the opening and closing of a discharge control valve of a gas discharge tower using a pressure value measured by a pressure sensor.

[0104] In a first embodiment, a discharge control valve (412) is disposed on one side of at least one gas discharge tower (410), and a pressure sensor (413) is disposed in the internal space. When pressure values ​​measured by each pressure sensor (413) are input at preset time intervals, a control unit (700) may be additionally provided to control the opening and closing of the discharge control valve (412) of the gas discharge tower (410) by comparing each pressure value.

[0105] Here, the meaning of being input at a pre-set time interval is that it can be set in real time or set in 10-second intervals.

[0106] The first embodiment illustrates a general embodiment in which a control unit controls the opening and closing of a discharge control valve of a gas discharge tower using a pressure value measured by a pressure sensor.

[0107]

[0108]

[0109] The second embodiment describes an embodiment in which a plurality of gas discharge towers equipped with internal pressure sensors are arranged, and a control unit controls the pressure value of each gas discharge tower to an average value.

[0110] In a second embodiment, when a plurality of gas discharge towers (410) are arranged, the control unit (700) calculates the average pressure of each input pressure value and controls the discharge control valve (412) of the gas discharge tower (410) determined to be higher than the average pressure to be partially or completely closed according to a preset standard, thereby controlling the internal pressure of the controlled gas discharge tower (410) to reach the average pressure.

[0111] For example, this is an embodiment in which the discharge control valves of each gas discharge tower are opened and closed continuously or discontinuously as the pressure value input in real time changes, so that the internal pressure value of the collected gas discharge tower converges to the average pressure value.

[0112] FIG. 8 is a schematic diagram showing the functional operation in which seven gas discharge towers (410) are arranged, a pressure sensor (430) is arranged inside the gas discharge tower (410), the measured pressure value is transmitted to a control unit (600), and the control unit (600) controls a discharge control valve (412).

[0113]

[0114]

[0115] The third embodiment is an embodiment in which a gas exhaust tower is divided into multiple sections.

[0116] In a third embodiment, when at least three gas discharge towers (410) are arranged and each gas discharge tower (410) is divided into multiple sections along the outer circumference of the stage, the control unit (700) can partially or completely close the discharge control valve (412) of each gas discharge tower (410) belonging to each section.

[0117]

[0118] The fourth embodiment is a subdivided example of the third embodiment, and is an embodiment in which a gas exhaust tower is divided into three sections.

[0119] As a fourth embodiment, the plurality of sections may be divided into a first section partitioned at one end, a second section partitioned in the middle, and a third section partitioned at the other end. The control unit (700) may partially or completely close the discharge control valve (412) of each gas discharge tower (410) belonging to at least two sections.

[0120] FIG. 10 shows an embodiment in which seven gas discharge towers (420) are arranged along the outer circumference of a stage (200), divided into a first section (A) corresponding to one end, a second section (B) corresponding to the middle, and a third section (C) corresponding to the other end.

[0121] FIG. 11 shows various embodiments in which the discharge control valve of each section of FIG. 10 is opened or closed.

[0122] FIG. 11a shows an embodiment in which the exhaust control valve is opened in the first, second, and third sections. It is an embodiment in which exhaust is performed through each gas exhaust tower.

[0123] FIG. 11b shows an embodiment in which the discharge control valve of the first section is closed, and the discharge control valves of the second and third sections are open. This can be performed to resolve non-uniformity in the event that non-uniformity occurs when process gas is concentrated in the first section, causing the deposition thickness to become thicker.

[0124] FIG. 11c shows an embodiment in which the discharge control valves of the first and second sections are open, and the discharge control valve of the third section is closed. If process gas is concentrated in the third section, the deposition thickness becomes thicker, and if non-uniformity of thickness occurs, this can be performed to resolve the non-uniformity.

[0125] FIG. 11d shows an embodiment in which the discharge control valves of the first and third sections are open, and the discharge control valve of the second section is closed. This can be done to prevent the deposition thickness of the deposition target, e.g., the center of a wafer, from becoming too thick if a large amount of process gas flows into the second section facing the supply port.

[0126]

[0127]

[0128] Meanwhile, the gas discharge tower according to the present invention can be implemented as an embodiment comprising a plurality of unit towers.

[0129] The aforementioned first to fourth embodiments are based on the premise that the gas exhaust tower operates as a single unit. However, in this embodiment, by including a plurality of unit towers stacked in the height direction, an embodiment is presented that enables more precise exhaust control of the gas exhaust tower.

[0130]

[0131] FIG. 12 shows an embodiment in which a gas discharge tower (410) according to the present invention is independently controlled and includes at least two unit towers (410a) (410b) stacked in the height direction.

[0132]

[0133] In this embodiment, the gas discharge tower (410) includes a plurality of unit towers (410a) (410b) that are independently controlled and stacked in the height direction, and a discharge control valve (412) is disposed on one side of each unit tower (410a), and a pressure sensor (413) is disposed in the internal space, and a control unit (700) may be additionally provided to control the opening and closing of the discharge control valve (412) of each unit tower (410a) by comparing the pressure values ​​measured by each pressure sensor (413) with each other when the pressure values ​​are input at preset time intervals.

[0134]

[0135] In this embodiment, the control unit (700) calculates the average pressure of each input pressure value and controls the discharge control valve (412) of the unit tower (410a) (410b) that is determined to be higher than the average pressure to be partially or completely closed according to a preset standard, thereby controlling the internal pressure of the controlled unit tower (410a) (410b) to reach the average pressure.

[0136]

[0137] In this embodiment, when at least three gas discharge towers (410) are arranged and each gas discharge tower (410) is divided into multiple sections along the outer circumference of the stage, the control unit (700) can control the discharge control valve (412) of each unit tower (410a) included in each gas discharge tower (410) belonging to each section to close some or all of them.

[0138]

[0139] In this embodiment, the plurality of sections may be divided into a first section partitioned at one end, a second section partitioned in the middle, and a third section partitioned at the other end.

[0140]

[0141] In this embodiment, the control unit (700) can partially or completely close the discharge control valve (412) of each unit tower (410a) belonging to at least two sections.

[0142]

[0143] Meanwhile, in the present invention, a cover portion (800) that covers the reaction space portion (110), gas supply portion (300), and gas discharge portion (400) so as to seal them may be further provided.

[0144] FIG. 7 shows an embodiment in which a cover portion (800) is further provided to cover the reaction space portion (110), gas supply portion (300), and gas discharge portion (400) in FIG. 6 so as to seal them.

[0145]

[0146] The embodiments described in this specification and the accompanying drawings are merely illustrative of a part of the technical concept included in the present invention. Accordingly, since the embodiments disclosed in this specification are intended to explain, not limit, the technical concept of the present invention, it is obvious that the scope of the technical concept of the present invention is not limited by these embodiments. All variations and specific embodiments that can be easily deduced by a person skilled in the art within the scope of the technical concept included in the specification and drawings of the present invention should be interpreted as being included within the scope of the rights of the present invention.

Claims

1. A reaction chamber partitioning the reaction space; A stage for stacking deposition targets spaced apart in the height direction within the above reaction space; A gas supply unit that supplies process gas to the deposition target through a plurality of supply holes spaced apart along the height direction and arranged in the height direction on the outer periphery of the above stage; and A gas discharge section comprising at least one gas discharge tower formed with a hollow structure disposed on the outer periphery of the stage, wherein a plurality of discharge holes are spaced apart and formed along the height direction in the gas discharge tower; A vacuum deposition apparatus capable of controlling process gas flow inside a reaction chamber, characterized in that the supply port of the gas supply unit and the discharge port of the gas discharge tower are arranged opposite each other.

2. In Claim 1, A vacuum deposition apparatus capable of controlling gas flow inside a reaction chamber, characterized in that the above stage is rotatable.

3. In Claim 1, A vacuum deposition apparatus capable of controlling gas flow inside a reaction chamber, characterized in that the process gas supplied from the above gas supply unit flows through each spaced-apart space of the deposition target.

4. In Claim 3, The above supply port and the above discharge port are A vacuum deposition apparatus capable of controlling gas flow inside a reaction chamber, characterized by being arranged oppositely through the above-mentioned separation spaces.

5. In Claim 1, In the above gas discharge section, A discharge control valve is installed on one side of the above gas discharge tower, and A vacuum deposition apparatus capable of controlling gas flow inside a reaction chamber, characterized in that the above gas discharge tower is connected to a discharge pump through the above discharge control valve.

6. In Claim 5, A vacuum deposition apparatus capable of controlling gas flow inside a reaction chamber, characterized in that the above-mentioned discharge control valve is at least partially open or closed.

7. In Claim 1, A vacuum deposition apparatus capable of controlling gas flow inside a reaction chamber, characterized by having a pressure sensor disposed in the internal space of the above-mentioned gas discharge tower.

8. In Claim 1, A discharge control valve is positioned on one side of the above gas discharge tower, and a pressure sensor is positioned in the internal space. A vacuum deposition apparatus capable of controlling gas flow inside a reaction chamber, characterized by additionally comprising a control unit that controls the opening and closing of a discharge control valve of a gas discharge tower by comparing each pressure value when pressure values ​​measured by each pressure sensor are input at preset time intervals.

9. In Claim 8, When multiple of the above gas exhaust towers are arranged, The above control unit Calculate the average pressure of each input pressure value, and A vacuum deposition apparatus capable of controlling gas flow inside a reaction chamber, characterized by controlling the discharge control valve of a gas discharge tower determined to be higher than the average pressure to partially or completely close it according to a preset standard, thereby controlling the internal pressure of the controlled gas discharge tower to reach the average pressure.

10. In claim 8, When at least three of the above-mentioned gas exhaust towers are arranged and each gas exhaust tower is divided into multiple sections along the outer perimeter of the stage, A vacuum deposition apparatus capable of controlling gas flow inside a reaction chamber, characterized by the above-mentioned control unit closing some or all of the discharge control valves of each gas discharge tower belonging to each section.

11. In Claim 10, The above multiple sections A vacuum deposition apparatus capable of controlling gas flow inside a reaction chamber, characterized by being divided into a first section partitioned at one end, a second section partitioned in the middle, and a third section partitioned at the other end.

12. In Claim 10, The above control unit A vacuum deposition apparatus capable of controlling gas flow inside a reaction chamber, characterized by partially or completely closing the discharge control valves of each gas discharge tower belonging to at least two sections.

13. In Claim 1, The above gas discharge tower includes a plurality of unit towers that are independently controlled and stacked in the height direction, and A discharge control valve is positioned on one side of each unit tower, and a pressure sensor is positioned in the internal space, and A vacuum deposition apparatus capable of controlling gas flow inside a reaction chamber, characterized by additionally being provided with a control unit that controls the opening and closing of discharge control valves of each unit tower by comparing each pressure value when pressure values ​​measured by each pressure sensor are input at preset time intervals.

14. In Claim 13, The above control unit Calculate the average pressure of each input pressure value, and A vacuum deposition apparatus capable of controlling gas flow inside a reaction chamber, characterized by controlling the discharge control valve of a unit tower determined to be higher than the average pressure to partially or completely close it according to a preset standard, thereby controlling the internal pressure of the controlled unit tower to reach the average pressure.

15. In Claim 13, When at least three of the above-mentioned gas exhaust towers are arranged and each gas exhaust tower is divided into multiple sections along the outer perimeter of the stage, A vacuum deposition apparatus capable of controlling gas flow inside a reaction chamber, characterized in that the above-described control unit controls the discharge control valves of each unit tower included in each gas discharge tower belonging to each section to be partially or completely closed.

16. In Claim 15, The above multiple sections A vacuum deposition apparatus capable of controlling gas flow inside a reaction chamber, characterized by being divided into a first section partitioned at one end, a second section partitioned in the middle, and a third section partitioned at the other end.

17. In Claim 16, The above control unit A vacuum deposition apparatus capable of controlling gas flow inside a reaction chamber, characterized by partially or completely closing the discharge control valves of each unit tower belonging to at least two sections.

18. In Claim 1, A vacuum deposition apparatus capable of controlling gas flow inside a reaction chamber, characterized by further comprising a cover portion that covers the reaction space, gas supply portion, and gas discharge portion so as to seal them.

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