Faraday apparatus for angle measurement of parallel beam

A technology of parallel beams and Faraday cups, applied in the direction of measuring devices, instruments, discharge tubes, etc., can solve problems affecting the uniformity and accuracy of injected doses

CN101414545AInactive Publication Date: 2009-04-22BEIJING ZHONGKEXIN ELECTRONICS EQUIP
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
Publication Date
2009-04-22
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention discloses a parallel-beam angle measurement Faraday device of an ion implanter, relates to the ion implanter and belongs to the manufacturing field of semiconductors. The structure is as follows: the parallel-beam angle measurement Faraday device is composed of a Faraday collection frame, an electronic suppression plate, a bottom plate of the collection frame, seven fixed-angle Faraday cups and a moving Faraday cup, the Faraday collection frame collects incident ion beam flow, the electronic suppression plate suppresses the electron overflow generated by the bombardment on metal bodies of the Faraday cups by ion beams, the angle collection bottom plate is used for the vacuum connection and the sealing of the Faraday collection frame and the Faraday cups, the seven fixed-angle Faraday cups measure the current intensity of the ion beams, the central position of the implanted ion beams is determined by being combined with the moving Faraday cup which is arranged in a target room area, when the parallel beams are the incident beams which are perpendicular to a crystal plane, the central position of the blocking beams of the moving Faraday cup is consistent with the center of the measuring beams of the fixed Faraday cups, and the current of the fixed-angle Faraday cups simultaneously achieves the peak value at the position when the current of the moving Faraday cup achieves the peak value.
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Description

technical field

[0001] The invention relates to a Faraday device for measuring the angle of a parallel beam of an ion implanter, relates to an ion implanter and belongs to the field of semiconductor manufacturing. technical background

[0002] In the ion implantation process of wafers with a size of 200mm or more, the angle of the beam flow direction of the parallel ion beam to be implanted in the horizontal plane relative to the normal direction of the wafer at the vertical implantation position on the target will affect the effective beam width and beam current of the actual implantation The offset of the center relative to the center of the wafer affects the uniformity and accuracy of the implant dose. In order to monitor the angle change of the parallel beam during injection in real time, an angle measurement Faraday device is used to detect the stability of the parallel beam. After the measured angle value is fed back to the parallel beam control system, the electromag...

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Embodiment Construction

[0019] The present invention will be further introduced below in conjunction with the accompanying drawings, but not as a limitation to the invention.

[0020] The Faraday collection frame 1 is connected with the cavity of the target chamber with screws, the middle honey cover uses a standard O-ring, and the slit on the electronic suppression plate 2 adopts a guide pyramid shape, which is convenient for the beam to enter the cup body, and at the same time can well suppress The beam excites the secondary electrons generated by the cup to overflow to ensure the accuracy of the measured beam value.

[0021] The specific embodiment of the present invention has described the content of the present utility model in detail. For those skilled in the art, any obvious changes made to it without departing from the spirit of the present invention constitute an infringement of the patent of the present invention, and corresponding legal responsibilities will be borne.