Adjustable extended electrode for edge uniformity control

Abstract

Embodiments described herein generally relate to a substrate processing apparatus. In one embodiment, a process kit for a substrate processing chamber is disclosed herein. The process kit includes a ring having a first ring member and a second ring member; an adjustable tuning ring; and an actuation mechanism. The first ring member interfaces with the second ring member such that the second ring member is movable relative to the first ring member, thereby forming a gap therebetween. The adjustable tuning ring is positioned below the ring and contacts a bottom surface of the second ring member. A top surface of the adjustable tuning ring contacts the second ring member. The actuation mechanism interfaces with the bottom surface of the adjustable tuning ring. The actuation mechanism is configured to actuate the adjustable tuning ring such that the gap between the first ring member and the second ring member changes.

Description

Technical Field

[0001] Embodiments described herein generally relate to a substrate processing apparatus, and more particularly to an improved process kit for a substrate processing apparatus. Background Art

[0002] As semiconductor technology node advancements reduce device geometries, substrate edge critical dimension uniformity requirements become more stringent and impact die yield. Commercial plasma reactors include multiple tunable knobs for controlling process uniformity across the substrate (e.g., such as temperature, gas flow, RF power, etc.). Typically, during the etching process, a silicon substrate is etched while being electrostatically clamped to an electrostatic chuck.

[0003] During processing, a substrate resting on a substrate support may undergo processes in which material is deposited on the substrate and portions of the material are removed from the substrate, or etched away (typically in a continuous process or alternating processes). It is generally beneficial to have uniform deposition and etching rates across the substrate surface. However, there are often process non-uniformities across the substrate surface, and such process non-uniformities may be significant at the periphery or edge of the substrate. These non-uniformities at the periphery can be attributed to field termination effects and are sometimes referred to as edge effects. During deposition or etching, a process kit containing at least a deposition ring is sometimes provided to advantageously influence uniformity at the periphery or edge of the substrate.

[0004] Therefore, there is a continuing need for an improved process kit for substrate processing equipment. Summary of the Invention

[0005] Embodiments described herein generally relate to a substrate processing apparatus. In one embodiment, a process kit for a substrate processing chamber is disclosed herein. The process kit includes: a ring; an adjustable tuning ring; and an actuation mechanism. The ring has a first ring member and a second ring member. The first ring member interfaces with the second ring member such that the second ring member is movable relative to the first ring member, thereby forming a gap therebetween. The adjustable tuning ring is positioned below the ring and contacts a bottom surface of the second ring member. The adjustable tuning ring has a top surface and a bottom surface. The top surface of the adjustable tuning ring contacts the second ring member. The actuation mechanism interfaces with the bottom surface of the adjustable tuning ring. The actuation mechanism is configured to actuate the adjustable tuning ring such that the gap between the first ring member and the second ring member changes.

[0006] In another embodiment, a processing chamber is disclosed herein. The processing chamber includes a substrate support member and a process kit. The substrate support member is configured to support a substrate. The process kit is supported by the substrate support member. The process kit includes: a ring; an adjustable tuning ring; and an actuation mechanism. The ring includes a first ring member and a second ring member. The first ring member interfaces with the second ring member such that the second ring member is movable relative to the first ring member, thereby forming a gap therebetween. The adjustable tuning ring is positioned below the ring and contacts a bottom surface of the second ring member. The adjustable tuning ring includes a top surface and a bottom surface. The top surface of the adjustable tuning ring contacts the second ring member. The actuation mechanism interfaces with the bottom surface of the adjustable tuning ring. The actuation mechanism is configured to actuate the adjustable tuning ring to change the gap between the first ring member and the second ring member.

[0007] In another embodiment, a method for processing a substrate is disclosed herein. A substrate is positioned on a substrate support member disposed in a substrate processing chamber. A plasma is created above the substrate. The height of an edge ring member is adjusted by actuating an adjustable tuning ring that interfaces with the member to change the direction of ions at the edge of the substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] Therefore, in order to understand in detail the manner in which the above-mentioned features of the present disclosure are structured, a more particular description of the present disclosure, briefly summarized above, may be made with reference to embodiments, some of which are illustrated in the accompanying drawings. It should be noted, however, that the drawings illustrate only typical embodiments of the present disclosure and are therefore not to be considered limiting of its scope, for the disclosure may admit to other equally effective embodiments.

[0009] Figure 1 is a cross-sectional view of a processing chamber according to one embodiment.

[0010] Figure 2A According to one embodiment Figure 1 An enlarged partial cross-sectional view of a processing chamber.

[0011] Figure 2B According to one embodiment Figure 1 An enlarged partial cross-sectional view of a processing chamber.

[0012] Figure 3 According to one embodiment Figure 1 A simplified cross-sectional view of a portion of a processing chamber depicting two capacitive paths.

[0013] Figure 4A According to one embodiment Figure 1 FIG. 1 is a simplified cross-sectional view of a portion of a processing chamber illustrating another advantage of the present disclosure.

[0014] Figure 4B According to one embodiment Figure 1 FIG. 1 is a simplified cross-sectional view of a portion of a processing chamber illustrating another advantage of the present disclosure.

[0015] For purposes of clarity, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. Additionally, elements in one embodiment may be advantageously adapted for use in other embodiments described herein. DETAILED DESCRIPTION

[0016] Figure 1 is a device according to one embodiment having an adjustable tuning ring (such as Figure 2A 、 2B , 3, 4A, and / or 4B) is a cross-sectional view of a processing chamber 100 having an adjustable tuning ring 150 as shown in FIG. 4A. As shown, the processing chamber 100 is an etch chamber suitable for etching a substrate such as substrate 101. An example of a processing chamber that may be suitable for benefiting from the present disclosure is the etch chamber commercially available from Applied Materials, Inc., Santa Clara, California. Processing chamber, Processing chamber and Mesa TM Processing Chambers. It is contemplated that other processing chambers, including deposition chambers and chambers from other manufacturers, may be adapted to benefit from the present disclosure.

[0017] The processing chamber 100 can be used for various plasma processes. In one embodiment, the processing chamber 100 can be used to perform dry etching using one or more etchants. For example, the processing chamber can be used to ignite plasma from a precursor C x F y (where x and y can be different allowed combinations), O2, NF3 or a combination of the above.

[0018] The processing chamber 100 includes a chamber body 102, a lid assembly 104, and a support assembly 106. The lid assembly 104 is positioned at an upper end of the chamber body 102. The support assembly 106 resides within an interior volume 108 defined by the chamber body 102. The chamber body 102 includes a slit valve opening 110 formed in a sidewall thereof. The slit valve opening 110 is selectively opened and closed to allow a substrate handling robot (not shown) to enter the interior volume 108.

[0019] The chamber body 102 may further include a liner 112 that surrounds the support assembly 106. The liner 112 is removable for maintenance and cleaning. The liner 112 may be made of a metal such as aluminum, a ceramic material, or any other process-compatible material. In one or more embodiments, the liner 112 includes one or more apertures 114 and a suction channel 116 formed therein, the suction channel being in fluid communication with a vacuum port 118. The apertures 114 provide a flow path for gas to enter the suction channel 116. The suction channel 116 provides an outlet for gas within the chamber 100 to pass to the vacuum port 118.

[0020] A vacuum system 120 is coupled to the vacuum port 118. The vacuum system 120 may include a vacuum pump 122 and a throttle valve 124. The throttle valve 124 regulates the flow of gas through the chamber 100. The vacuum pump 122 is coupled to the vacuum port 118 disposed in the interior volume 108.

[0021] The lid assembly 104 includes at least two stacked components configured to form a plasma volume or cavity therebetween. In one or more embodiments, the lid assembly 104 includes a first electrode 126 ("upper electrode") vertically disposed above a second electrode 128 ("lower electrode"). The upper electrode 126 and the lower electrode 128 define a plasma cavity 130 therebetween. The first electrode 126 is coupled to a power source 132, such as an RF power source. The second electrode 128 is connected to ground, thereby forming a capacitor between the two electrodes 126, 128. The upper electrode 126 is in fluid communication with a gas inlet 134. A first end of the one or more gas inlets 134 opens into the plasma cavity 130.

[0022] The lid assembly 104 may also include an isolation ring 136 that electrically isolates the first electrode 126 from the second electrode 128. The isolation ring 136 may be made of alumina or any other insulating process compatible material.

[0023] The lid assembly may further include a gas distribution plate 138 and a barrier plate 140. The second electrode 128, the gas distribution plate 138, and the barrier plate 140 may be stacked and disposed on a lid edge 142 coupled to the chamber body 102.

[0024] In one or more embodiments, the second electrode 128 may include a plurality of gas passages 144 formed below the plasma cavity 130 to allow gas from the plasma cavity 130 to flow therethrough. The gas distribution plate 138 includes a plurality of apertures 146 configured to distribute gas flow therethrough. A blocking plate 140 may optionally be disposed between the second electrode 128 and the gas distribution plate 138. The blocking plate 140 includes a plurality of apertures 148 for providing a plurality of gas passages from the second electrode 128 to the gas distribution plate 138.

[0025] The support assembly 106 may include a support member 180. The support member 180 is configured to support the substrate 101 for processing. The support member 180 may be coupled to a lift mechanism 182 via a shaft 184 that extends through a bottom surface of the chamber body 102. The lift mechanism 182 may be flexibly sealed to the chamber body 102 by a bellows 186 that prevents vacuum leakage around the shaft 184. The lift mechanism 182 allows the support member 180 to move vertically within the chamber body 102 between a lower transfer section and a plurality of elevated process positions. Additionally, one or more lift rods 188 may be disposed through the support member 180. The one or more lift rods 188 are configured to extend through the support member 180 so that the substrate 101 can be elevated from a surface of the support member 180. The one or more lift rods 188 are movable via a lift ring 190.

[0026] Figure 2A is a partial cross-sectional view of a portion of a processing chamber 100 according to one embodiment, showing a process kit 200 disposed on a support member 180. The support member 180 includes an electrostatic chuck 202, a cooling plate (or cathode) 204, and a base 206. The cooling plate 204 is disposed on the base 206. The cooling plate 204 may include a plurality of cooling channels (not shown) to circulate a coolant therethrough. The cooling plate 204 may be engaged with the electrostatic chuck 202 by an adhesive or any suitable mechanism. One or more power supplies 208 may be coupled to the cooling plate 204. The electrostatic chuck 202 may include one or more heaters (not shown). The one or more heaters may be independently controllable. The one or more heaters enable the electrostatic chuck 202 to heat the substrate 101 to a desired temperature from the bottom surface of the substrate 101.

[0027] The process kit 200 can be supported on the support member 180. The process kit 200 includes an edge ring 210 having an annular body 212. The annular body 212 is divided into two edge ring components 214 and 216. The two edge ring components 214 and 216 abut against each other, such that component 216 is movable relative to component 214. The first edge ring component 214 includes a top surface 218, a bottom surface 220, an inner edge 222, and an outer edge 224. The top surface 218 is substantially parallel to the bottom surface 220. The inner edge 222 is substantially parallel to the outer edge 224 and substantially perpendicular to the bottom surface 220. In some embodiments, the first edge ring component 214 further includes a stepped surface 226 defined therein. In the illustrated embodiment, the stepped surface 226 is formed in the outer edge 224 such that the stepped surface 226 is substantially parallel to the bottom surface 220. The stepped surface 226 defines a recess for receiving the second edge ring component 216. Generally speaking, the height of first edge ring member 214 is limited by the height of electrostatic chuck 202. For example, inner edge 222 of first edge ring member 214 does not extend above the height of electrostatic chuck 202. Thus, first edge ring member 214 protects one side of electrostatic chuck 202. In some embodiments, substrate 101 extends partially above first edge ring member 214 when positioned on electrostatic chuck 202.

[0028] Second edge ring component 216 includes a top surface 228, a bottom surface 230, an inner edge 232, and an outer edge 234. Top surface 228 is substantially parallel to bottom surface 230. Inner edge 232 is substantially parallel to outer edge 234 and substantially perpendicular to bottom surface 230. In one embodiment, second edge ring component 216 interfaces with first edge ring component 214 via bottom surface 230. For example, bottom surface 230 of second edge ring component 216 interfaces with stepped surface 226 of first edge ring component 214. In another embodiment, second edge ring component 216 may further include a stepped surface 236 defined therein. In the illustrated embodiment, stepped surface 236 is formed in inner edge 232 such that stepped surface 236 interfaces with stepped surface 226 of first edge ring component 214. When interfaced with first edge ring component 214, inner edge 232 of second edge ring component 216 is spaced apart from substrate 101. For example, the inner edge 232 of the second edge ring component 216 can be spaced apart from the substrate 101 by a distance between about 0.02 mm and about 0.1 mm.

[0029] In one embodiment, when docked, first edge ring component 214 and second edge ring component 216 form a continuous bottom surface 238 and a continuous top surface 240. In another embodiment, when docked, first edge ring component 214 and second edge ring component 216 do not form a continuous bottom surface 238 or a continuous top surface 240. Rather, in some embodiments, top surface 218 of first edge ring component 214 can be higher than top surface 228 of second edge ring component 216. In other embodiments, bottom surface 230 of second edge ring component 216 can be positioned below bottom surface 220 of first edge ring component 214. Thus, in some embodiments, first edge ring component 214 and second edge ring component 216 do not form a continuous top or bottom surface.

[0030] The process kit also includes an adjustable tuning ring 150 having a top surface 254 and a bottom surface 256. The adjustable tuning ring 150 can be formed from a conductive material such as aluminum. The adjustable tuning ring 150 is disposed below the edge ring 210. For example, the adjustable tuning ring 150 is disposed below the second edge ring component 216. The adjustable tuning ring 150 contacts the bottom surface 238 of the edge ring 210. For example, the adjustable tuning ring 150 contacts the bottom surface 230 of the second edge ring component 216. In one embodiment, the adjustable tuning ring 150 extends downward along the length of the electrostatic chuck 202 and the cooling plate 204 such that the height of the adjustable tuning ring 150 is substantially equal to the combined height of the electrostatic chuck 202 and the cooling plate 204. Thus, the adjustable tuning ring 150 is capable of coupling power from the cooling plate 204 to the edge ring 210.

[0031] The adjustable tuning ring 150 can surround the cooling plate 204 to form a laterally spaced gap 258. In one example, the laterally spaced gap 258 is greater than 0 inches and less than or equal to 0.03 inches. The adjustable tuning ring 150 interfaces with the lifting rods 260. For example, the lifting rods 260 can be operably coupled to the adjustable tuning ring 150. The lifting rods 260 are driven by the lifting mechanism 182. In some embodiments, the lifting rods 260 can be driven by a lifting mechanism (not shown) that is independent of the lifting mechanism 182. The lifting mechanism 182 allows the adjustable tuning ring 150 to move vertically within the chamber 100. Due to the vertical movement of the tuning ring 150, the lifting mechanism 182 raises the second edge ring member 216. The second edge ring member 216 can be raised above the first edge ring member 214 to form a gap ( Figure 4B 299 in the .

[0032] In one embodiment, the adjustable tuning ring 150 can include a coating 263 formed on the top surface 254 of the adjustable tuning ring 150. For example, the coating 263 can be an yttria coating or a gel-like coating. The coating 263 is used to limit chemical reactions between the plasma and the adjustable tuning ring 150, thereby limiting particle formation and ring damage. In another embodiment, one or more dielectric pads (e.g., Teflon pads) 306 are positioned between the edge ring 210 and the electrostatic chuck, and the edge ring 210 is placed on the electrostatic chuck.

[0033] In another embodiment (such as Figure 2B In the embodiment shown in FIG, 2 , the adjustable tuning ring 150 can be manually moved, thereby eliminating the need for a lifting rod 260. The tuning ring 150 may include a cavity 262 and an access hole 264 formed therein. The access hole 264 is formed from the top of the adjustable tuning ring 150 and extends downward into the cavity 262. The access hole 264 has a first diameter 266 that is smaller than a second diameter 268 of the cavity 262. The cavity 262 is formed below the access hole 264. The cavity 262 is formed downward to the bottom of the tuning ring 150. The cavity 262 is configured to accommodate a screw 270. The screw 270 can be turned via a hexagonal wrench (not shown), for example, thereby extending into the cavity 262 through the access hole 264 so that the screw 270 can raise / lower the tuning ring 150.

[0034] Combine Figure 2A and Figure 2B As discussed, the process kit 200 may also include a quartz ring 272. The quartz ring 272 includes an annular body 274 having a top surface 276, a bottom surface 278, an inner edge 280, and an outer edge 282. The top surface 276 is substantially parallel to the bottom surface 278. The inner edge 280 is substantially parallel to the outer edge 282 and substantially perpendicular to the bottom surface 278. The inner edge 280 is positioned adjacent to the adjustable tuning ring 150 and the edge ring 210.

[0035] Figure 3 According to one embodiment Figure 1A simplified cross-sectional view of a portion of a processing chamber depicting two capacitors is shown. Power can be coupled from cathode 204 to edge ring 210 along two paths through two capacitors 302, 304. The amount of power coupled depends on the capacitance along these two paths relative to capacitance 305 between ring 210 and the plasma. Depending on plasma conditions, capacitance 305 can vary. For example, capacitance 305 can vary from 5 pF to 150 pF. In another example, as adjustable tuning ring 150 moves up and down, capacitance 304 can vary between approximately 10 pF and approximately 500 pF due to the formation of a parallel plate capacitor between the two edge ring components 214, 216. As adjustable tuning ring 150 moves up and down, capacitance 302 also varies due to the overlap between the adjustable tuning ring 150 and cathode 204. The positioning of adjustable tuning ring 150 and cathode 204 forms a parallel plate capacitor. As the adjustable tuning ring 150 moves up and down, the overlap area between the adjustable tuning ring 150 and the cathode 204 changes, which causes the capacitance 302 to change. However, the change in capacitance 302 is limited because the amplitude of the vertical movement is small relative to the length of overlap between the adjustable tuning ring 150 and the cathode 204. For example, the amplitude of the vertical movement can be from about 0 mm to about 2 mm, while the length of overlap between the adjustable tuning ring 150 and the cathode is about 3 cm. Therefore, the capacitance 302 remains above a certain threshold amount. For example, the capacitance 302 can remain above 1000 pF. Therefore, the capacitance between the cathode 204 and the edge ring 210 (which is the sum of the capacitances 302 and 304) is always at least one order of magnitude higher than the capacitance 305. Therefore, the potential V of the edge ring 210 is DC Keep it approximately constant. For example, the potential change may not exceed 5%. The voltage V applied to the edge ring 210 DC Maintaining constant allows control of the plasma sheath around the substrate 101 and edge ring 210. Its effects are discussed below in conjunction with Figure 4A and 4B Discuss in more detail.

[0036] Figure 4A A portion of a processing chamber 100 is shown according to one embodiment, illustrating another advantage of the present disclosure. DC It can be used to control the plasma sheath 404 profile at the edge 406 of the substrate 101 in order to compensate for critical dimension uniformity at the substrate edge 406. The plasma sheath 404 is a thin region of strong electric field formed by space charge, which binds the plasma body to its material boundary. Mathematically, the sheath thickness d is expressed by the Child-Langmuir equation:

[0037]

[0038] where i is the ionic current density, ε is the dielectric constant of vacuum, e is the elementary charge, and V p is the plasma potential, and V DC is a DC voltage.

[0039] In the case of an etch reactor, a plasma sheath 404 is formed between the plasma and the substrate 101 being etched, the chamber body 102, and other portions of the processing chamber 100 that are in contact with the plasma. Ions generated in the plasma are accelerated in the plasma sheath and move perpendicular to the plasma sheath. Control V DC (ie, controlling the voltage applied to the edge ring 210) affects the thickness d of the shell 404. The shell thickness d of the shell 404 can be measured relative to the edge ring 210. For example, Figure 4A and Figure 4B The thickness d is depicted in FIG. In the embodiment shown, actuating the adjustable tuning ring 150 causes the second edge ring member 216 to rise. DC The shell 404 is held constant, and thus the shell thickness above the edge ring 210 remains constant. Thus, actuating the adjustable tuning ring 150 vertically raises the shell 404 without affecting the shell thickness. Thus, moving the adjustable tuning ring 150 affects the shape of the shell 404 at the edge 406 of the substrate 101, which in turn controls the direction of the plasma ions.

[0040] Figure 4B Shown Figure 4A 1. A portion of the processing chamber 100 wherein the second edge ring member 216 is in a raised position. Figure 4A As discussed, raising the adjustable tuning ring 150 raises the second edge ring member 216, which in turn raises the shell 404. DC Since the capacitance 302 is approximately constant due to the approximately fixed capacitance 302 , the thickness d of the shell 404 is always kept constant.

[0041] Return Reference Figure 1 , control of the adjustable tuning ring may be controlled by a controller 191. The controller 191 includes a programmable central processing unit (CPU) 192, which may operate in conjunction with a memory 194 and a mass storage device, an input control unit, and a display unit (not shown), such as a power supply, clock, cache, input / output (I / O) circuits, and lining, coupled to various components of the processing system to facilitate control of substrate processing.

[0042] To facilitate control of the chamber 100 described above, the CPU 192 can be any form of general-purpose computer processor that can be used in an industrial environment, such as a programmable logic controller (PLC), for controlling the various chambers and sub-processors. Memory 194 is coupled to the CPU 192 and is non-transitory and can be one or more readily available memories, such as random access memory (RAM), read-only memory (ROM), a floppy disk drive, a hard disk, or any other form of digital storage device (local or remote). Support circuits 196 are coupled to the CPU 192 to support the processor in a conventional manner. Charged species generation, heating, and other processes are generally stored in the memory 194, typically as software routines. The software routines can also be stored and / or executed by a second CPU (not shown) located remotely from the processing chamber 100 controlled by the CPU 192.

[0043] The memory 194 is in the form of a computer-readable storage medium containing instructions that, when executed by the CPU 192, facilitate the operation of the chamber 100. The instructions in the memory 194 are in the form of a program product, such as a program that implements the methods of the present disclosure. The program code may conform to any of a number of different programming languages. In one example, the present disclosure may be implemented as a program product stored on a computer-readable storage medium for use with a computer system. The program of the program product defines the functionality of the embodiments (including the methods described herein). Illustrative computer-readable storage media include, but are not limited to: (i) a non-writable storage medium on which information is permanently stored (e.g., a read-only memory device within a computer, such as a CD-ROM disk that can be read by a CD-ROM drive, flash memory, ROM chip, or any type of solid-state non-volatile semiconductor memory); and (ii) a writable storage medium on which information that can be modified is stored (e.g., a floppy disk or hard disk drive within a disk drive or any type of solid-state random access semiconductor memory). When executing computer-readable instructions that indicate the functionality of the methods described herein, such computer-readable storage media are embodiments of the present disclosure.

[0044] While the foregoing is directed to particular embodiments, other and further embodiments may be devised without departing from the basic scope of the invention, and the scope of the invention is determined by the appended claims.

Claims

1. A process kit for a substrate processing chamber, the process kit comprising: an edge ring having a first ring member and a second ring member, the first ring member abutting the second ring member such that the second ring member is movable relative to the first ring member to form a gap therebetween; an adjustable tuning ring positioned below the edge ring and contacting a bottom surface of the second ring member, the adjustable tuning ring having an annular body having a top surface and a bottom surface, a cavity formed in the bottom surface of the annular body, and an access orifice formed in the annular body, the access orifice extending from the top surface of the annular body into the cavity, the top surface of the annular body contacting the second ring member; as well as An actuating mechanism interfaces with a bottom surface of the annular body of the adjustable tuning ring, the actuating mechanism being configured to actuate the adjustable tuning ring such that the gap between the first ring member and the second ring member changes.

2. The process kit of claim 1, wherein the adjustable tuning ring is formed of a conductive material.

3. The process kit of claim 1 , wherein the first ring member comprises: A stepped surface is formed therein.

4. The process kit of claim 3, wherein the second ring member comprises: A stepped surface is formed therein, wherein the stepped surface of the second ring member abuts the stepped surface of the first ring member.

5. The process kit of claim 1 , wherein the actuation mechanism comprises: The lifting rod has a first end and a second end, the first end of the lifting rod contacts the bottom surface of the annular body of the adjustable tuning ring, and the second end of the lifting rod is communicated with a lifting mechanism.

6. The process kit of claim 1, wherein the actuation mechanism is a screw at least partially disposed in a cavity, the screw being configured to be rotated through an access aperture to actuate the adjustable tuning ring.

7. The process kit of claim 1, wherein the cavity has a first diameter and the access orifice has a second diameter, the first diameter being larger than the second diameter.

8. A process kit for a substrate processing chamber, the process kit comprising: an edge ring having a first ring member and a second ring member, the first ring member abutting the second ring member such that the second ring member is movable relative to the first ring member to form a gap therebetween; an adjustable tuning ring positioned below the edge ring and contacting a bottom surface of the second ring member, the adjustable tuning ring having a top surface and a bottom surface, the top surface of the adjustable tuning ring contacting the second ring member, the adjustable tuning ring including a coating formed on the top surface; as well as an actuation mechanism interfaced with the bottom surface of the adjustable tuning ring, the actuation mechanism being configured to actuate the adjustable tuning ring such that the gap between the first ring member and the second ring member changes, and the actuation mechanism being configured to push a plasma sheath formed between plasma and the edge ring up and down while maintaining a thickness of the plasma sheath approximately constant.

9. The process kit of claim 8, wherein the first ring member includes a stepped surface formed therein, the second ring member includes a stepped surface formed therein, and the stepped surface of the second ring member abuts the stepped surface of the first ring member.

10. The process kit of claim 8, wherein the actuation mechanism comprises: The lifting rod has a first end and a second end, the first end of the lifting rod contacts the bottom surface of the adjustable tuning ring, and the second end of the lifting rod is connected to a lifting mechanism.

11. A processing chamber comprising: a substrate support member configured to support a substrate; as well as A process kit, the process kit being supported by the substrate support member, the process kit comprising: an edge ring having a first ring member and a second ring member, the first ring member abutting the second ring member such that the second ring member is movable relative to the first ring member to form a gap therebetween; an adjustable tuning ring positioned below the edge ring and contacting a bottom surface of the second ring member, the adjustable tuning ring having an annular body having a top surface and a bottom surface, a cavity formed in the bottom surface of the annular body, and an access orifice formed in the annular body, the access orifice extending from the top surface of the annular body into the cavity, the top surface of the annular body contacting the second ring member; and An actuating mechanism interfaces with a bottom surface of the annular body of the adjustable tuning ring, the actuating mechanism being configured to actuate the adjustable tuning ring such that the gap between the first ring member and the second ring member changes.

12. The processing chamber of claim 11, wherein the adjustable tuning ring is formed of a conductive material.

13. The processing chamber of claim 11 , wherein the first ring member comprises: A stepped surface is formed therein.

14. The processing chamber of claim 13, wherein the second ring member comprises: A stepped surface is formed therein, wherein the stepped surface of the second ring member abuts the stepped surface of the first ring member.

15. The processing chamber of claim 11, wherein the actuation mechanism comprises: The lifting rod has a first end and a second end, the first end of the lifting rod contacts the bottom surface of the annular body of the adjustable tuning ring, and the second end of the lifting rod is communicated with a lifting mechanism.

16. The processing chamber of claim 11, wherein the actuation mechanism is a screw at least partially disposed in a cavity, the screw being configured to be rotated through an access aperture to actuate the adjustable tuning ring.

17. The processing chamber of claim 11, wherein the cavity has a first diameter and the access port has a second diameter, the first diameter being larger than the second diameter.

18. The processing chamber of claim 11, wherein the substrate support member comprises: base; a cooling plate supported by the base; as well as An electrostatic chuck is positioned on the top surface of the cooling plate.

19. A processing chamber comprising: a substrate support member configured to support a substrate; as well as A process kit, the process kit being supported by the substrate support member, the process kit comprising: an edge ring having a first ring member and a second ring member, the first ring member abutting the second ring member such that the second ring member is movable relative to the first ring member to form a gap therebetween; an adjustable tuning ring positioned below the edge ring and contacting a bottom surface of the second ring member, the adjustable tuning ring having a top surface and a bottom surface, the top surface of the adjustable tuning ring contacting the second ring member, the adjustable tuning ring including a coating formed on the top surface; and an actuation mechanism interfaced with the bottom surface of the adjustable tuning ring, the actuation mechanism being configured to actuate the adjustable tuning ring such that the gap between the first ring member and the second ring member changes, and the actuation mechanism being configured to push a plasma sheath formed between plasma and the edge ring up and down while maintaining a thickness of the plasma sheath approximately constant.

20. The processing chamber of claim 19, wherein the first ring member includes a stepped surface formed therein, the second ring member includes a stepped surface formed therein, and the stepped surface of the second ring member abuts the stepped surface of the first ring member.

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