A plasma etching device and a diffusion device thereof

By designing a plasma diffusion device, using the port amplification device and the fence to adjust the plasma density, the problems of uniformity and depth controllability of plasma etching of large-size substrates are solved, and effective etching of large-size substrates is achieved.

CN109545645BActive Publication Date: 2025-02-07UNIV OF SCI & TECH OF CHINA
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Patent Information

Application Number
CN201910044200.X
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2019-01-17
Publication Date
2025-02-07
Estimated Expiration
2039-01-17

AI Technical Summary

Technical Problem

Existing plasma etching equipment is difficult to effectively etch substrates greater than 800mm or even more than 1000mm, and there are challenges in achieving uniformity and depth control over a large size range.

Method used

A plasma diffusion device is designed, including a hollow port amplification device and a fence to diffuse the plasma area through the port amplification device, and the fence is used to adjust the plasma density.

Benefits of technology

Through this plasma diffusion device, the plasma region formed by the plasma generator can be increased to a certain extent, and the problems of uniformity and depth controllability of large-size substrate plasma etching are solved.

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Abstract

The present invention discloses a plasma diffusion device, characterized in that it comprises: a hollow port amplification device (1), the inlet end of the port amplification device (1) is used for sealing connection with the output end of a plasma source, and the area of ​​the inlet of the port amplification device (1) is smaller than the area of ​​the outlet; and a fence (5), the fence (5) is installed at the outlet end of the port amplification device (1) and is opposite to the outlet. The plasma area formed by the small plasma generator can be increased to a certain extent by providing the port amplification device. The present invention also discloses a plasma etching device having the above-mentioned plasma diffusion device.
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Description

Technical Field

[0001] The present invention relates to the technical field of plasma, and in particular to a plasma etching device and a diffusion device thereof. Background Art

[0002] Plasma etching technology is widely used in the fields of diffraction optics, integrated circuits, chips, display screens, and architecture. Plasma etching first ionizes the reaction gas through excitation sources such as radio frequency, microwaves, and DC high voltage, and then accelerates the charged particles through magnetic fields and electric fields to bombard the surface of the object to achieve uniform etching of the material or structure on the surface of the object. Taking the chip industry as an example, plasma etching is often used to etch semiconductor substrates (such as silicon) or organic materials such as photoresists coated thereon. For wafers or thin substrates with a diameter of less than 300mm (corresponding to 12 inches), there are mature plasma etching equipment. With the increase in demand for use, plasma etching is required for substrates with a size greater than 800mm or even greater than 1000mm in the fields of display screens and gratings. The plasma area directly generated by general small plasma generators cannot meet the use requirements.

[0003] How to use a small-aperture plasma source to achieve plasma etching of substrates that are much larger than the size of existing methods and equipment, and to ensure uniformity or depth controllability over a large size range has become an important issue in the development of large display screens and large-aperture gratings. Summary of the invention

[0004] In view of this, an object of the present invention is to provide a plasma diffusion device to increase the plasma area formed by a small plasma generator. In addition, another object of the present invention is to provide a plasma etching device having the above plasma diffusion device.

[0005] To achieve the above object, the present invention provides the following technical solutions:

[0006] A plasma diffusion device, comprising:

[0007] A hollow port amplifying device, wherein the inlet end of the port amplifying device is used for sealing connection with the output end of the plasma source, and the area of ​​the inlet of the port amplifying device is smaller than the area of ​​the outlet;

[0008] A fence is installed at the outlet end of the port amplification device and is opposite to the outlet.

[0009] Preferably, in the above-mentioned plasma diffusion device, the inlet of the port amplification device is the same size as the port of the plasma source output end, and the inlet of the port amplification device gradually expands toward the outlet of the port amplification device.

[0010] Preferably, the above-mentioned plasma diffusion device also includes a baffle having a first through hole of the same size as the outlet of the port amplification device, the baffle is sealed and detachably connected to the outlet end of the port amplification device, and the first through hole is opposite to the outlet, and the fence is installed on the baffle.

[0011] Preferably, in the above-mentioned plasma diffusion device, the baffle and the port amplification device are sealed and connected via a fluororubber ring.

[0012] Preferably, the above-mentioned plasma diffusion device further comprises:

[0013] A lining plate mounted on the baffle, the lining plate having a second through hole opposite to the first through hole and having the same size as the first through hole;

[0014] A pressure plate is connected to the lining plate, and the fence is detachably installed between the lining plate and the pressure plate.

[0015] Preferably, in the above-mentioned plasma diffusion device, the lining plate and the pressing plate are connected by set screws.

[0016] Preferably, in the above-mentioned plasma diffusion device, the fence is fixed between the lining plate and the pressure plate by locking screws.

[0017] Preferably, in the above-mentioned plasma diffusion device, the fence is a graphite strip.

[0018] Preferably, in the above-mentioned plasma diffusion device, both side surfaces of the graphite strip are stepped structures, and the side surfaces of adjacent graphite strips can overlap and fit.

[0019] A plasma etching device comprises a plasma source and also comprises any one of the plasma diffusion devices described above.

[0020] It can be seen from the above technical solutions that the plasma diffusion device disclosed in the present invention can increase the plasma area formed by the small plasma generator to a certain extent by providing a port amplification device. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the provided drawings without paying creative work.

[0022] Figure 1 It is a schematic structural diagram of a plasma diffusion device disclosed in an embodiment of the present invention;

[0023] Figure 2 An exploded view of a plasma diffusion device disclosed in an embodiment of the present invention;

[0024] Figure 3 It is a front view of a plasma diffusion device disclosed in an embodiment of the present invention;

[0025] Figure 4 It is a structural schematic diagram of a port amplification device disclosed in an embodiment of the present invention;

[0026] Figure 5 It is a schematic diagram of the structure of the fence disclosed in the embodiment of the present invention. DETAILED DESCRIPTION

[0027] In view of this, the core of the present invention is to provide a plasma diffusion device to increase the plasma area formed by a small plasma generator. Another core of the present invention is to provide a plasma etching device having the above plasma diffusion device.

[0028] In order to enable those skilled in the art to better understand the solution of the present invention, the present invention is further described in detail below in conjunction with the accompanying drawings and specific implementation methods.

[0029] like Figure 1-Figure 5 As shown, the present invention discloses a plasma diffusion device, comprising a port amplification device 1 and a fence 5. The inlet end of the port amplification device 1 is used for sealing connection with the output end of the plasma source, and the area of ​​the inlet of the port amplification device 1 is smaller than the area of ​​the outlet, and the fence 5 is installed at the outlet end of the port amplification device 1, and the fence 5 is opposite to the outlet of the port amplification device 1 to adjust the density of the plasma emitted from the outlet. By setting the port amplification device 1, the plasma area formed by the small plasma generator can be increased to a certain extent.

[0030] In a specific embodiment, the inlet of the port amplifier 1 is the same size as the port of the plasma source output end, and the inlet of the port amplifier 1 gradually expands toward the outlet of the port amplifier 1. After such a configuration, the port amplifier 1 is a trumpet-shaped diffusion structure, with a hollow through structure in the middle, and the whole is trumpet-shaped, and the trumpet-shaped structure plays a diffusion role. The connection part with the output end of the plasma generator can adopt a standard flange connection structure, but is not limited to the standard flange connection form.

[0031] The plasma diffusion device in the present application also includes a baffle 2 having a first through hole of the same size as the outlet of the port amplification device 1, the baffle 2 is sealed and detachably connected to the outlet end of the port amplification device 1, and the first through hole is opposite to the outlet of the port amplification device 1, and the fence 5 is installed on the baffle 2. The baffle 2 is added to facilitate the disassembly and assembly of the fence 5; it is connected to the output end of the trumpet-shaped diffusion structure, and its connection surface needs to be sealed to ensure the vacuum degree of the entire use environment. The shape of the first through hole in the middle of the baffle 2 is consistent with the outlet shape of the trumpet-shaped diffusion structure, which is conducive to the passage of plasma without being affected by the structural shape.

[0032] Specifically, a fluororubber ring 3 is used to seal the connection between the baffle plate 2 and the port amplifier 1. The fluororubber ring 3 is located between the baffle plate 2 and the port amplifier 1 to achieve sealing. The fluororubber ring 3 may also be made of other high temperature resistant and high strength materials.

[0033] In a further embodiment, the plasma diffusion device further comprises a lining plate 4 and a pressing plate 6, wherein the lining plate 4 is mounted on the baffle plate 2, and the lining plate 4 has a second through hole opposite to and having the same size as the first through hole of the baffle plate 3; the pressing plate 6 is connected to the lining plate 4, and the fence 5 is detachably mounted between the lining plate 4 and the pressing plate 6. The fence 5 is installed by using the lining plate 4 and the pressing plate 6, and when the width of the fence 5 needs to be adjusted, only the lining plate 4 can be disassembled, which further facilitates the disassembly and assembly of the fence 5. The lining plate 4 can be a frame structure, and the pressing plate 6 is a strip plate, which is used to fit with the end plate of the lining plate 4 on which the fence 5 is installed, so that the fence 5 is installed between the lining plate 4 and the pressing plate 6.

[0034] In a specific embodiment, the lining plate 4 and the pressure plate 6 are connected by set screws, and the fence 5 is connected by locking screws. In practice, other connection methods can also be used to achieve the connection as long as the connection is detachable.

[0035] Preferably, the fence 5 is a graphite strip, the side of the graphite strip adopts a stepped structure, and the side of the adjacent graphite strips can overlap and match, so that when multiple graphite strips are combined, the gap between them can be completely eliminated, which is conducive to adjusting the distribution of plasma. However, the graphite strip structure can be replaced by other materials, such as aluminum alloy.

[0036] In addition, the present application also discloses a plasma etching device, including a plasma source and the plasma diffusion device disclosed in the above embodiments. Therefore, the plasma etching device having the plasma diffusion device also has all the above technical effects, which will not be repeated here one by one.

[0037] The various embodiments in this specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the various embodiments can be referenced to each other.

[0038] The above description of the disclosed embodiments enables one skilled in the art to implement or use the present invention. Various modifications to these embodiments will be apparent to one skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention will not be limited to the embodiments shown herein, but rather to the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A plasma diffusion device, characterized in that: include: A hollow port amplifier (1), wherein the inlet end of the port amplifier (1) is used for sealing connection with the output end of a plasma source, the area of ​​the inlet of the port amplifier (1) is smaller than the area of ​​the outlet of the port amplifier (1), the inlet of the port amplifier (1) is the same size as the port of the output end of the plasma source, and the inlet of the port amplifier (1) gradually expands towards the outlet of the port amplifier (1); A fence (5), the fence (5) being installed at the outlet end of the port amplification device (1) and opposite to the outlet, and being used to adjust the density of the plasma emitted from the outlet; The fence (5) is a graphite strip, both sides of which are stepped structures, and the sides of adjacent graphite strips can overlap and fit; It also includes a baffle (2) having a first through hole of the same size as the outlet of the port amplification device (1), the baffle (2) is sealed and detachably connected to the outlet end of the port amplification device (1), and the first through hole is opposite to the outlet, and the fence (5) is installed on the baffle (2).

2. The plasma diffusion device according to claim 1, characterized in that: The baffle (2) and the port amplification device (1) are sealed and connected via a fluororubber ring (3).

3. The plasma diffusion device according to claim 1, characterized in that: Also includes: a lining plate (4) mounted on the baffle plate (2), the lining plate (4) having a second through hole opposite to the first through hole and having the same size as the first through hole; A pressure plate (6), wherein the pressure plate (6) is connected to the lining plate (4), and the fence (5) is detachably installed between the lining plate (4) and the pressure plate (6).

4. The plasma diffusion device according to claim 3, characterized in that: The lining plate (4) and the pressing plate (6) are connected via set screws.

5. The plasma diffusion device according to claim 3, characterized in that: The fence (5) is fixed between the lining plate (4) and the pressing plate (6) by means of locking screws.

6. A plasma etching device, comprising a plasma source, characterized in that: It also includes the plasma diffusion device as described in any one of claims 1-5.

Citation Information

Patent Citations

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    CN101170054A

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    CN108878242A

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