Substrate processing device

Abstract

The present invention provides a substrate processing device capable of uniformly etching a substrate. The substrate processing device of an embodiment includes a substrate processing tank, a processing liquid supply nozzle, and a pressure regulating plate. The processing liquid supply nozzle is arranged at the lower part of the substrate processing tank and discharges the processing liquid from a plurality of discharge ports. The pressure regulating plate is arranged between the processing liquid supply nozzle and the substrate in the substrate processing tank, has a plurality of holes for allowing the processing liquid to circulate, and regulates the inflow pressure of the processing liquid discharged from the processing liquid supply nozzle. In addition, the pressure regulating plate has an edge protruding from the surface on the processing liquid supply nozzle side and dividing the surface on the processing liquid supply nozzle side into a plurality of partitioned areas.

Description

Technical Field

[0001] An embodiment of the present invention relates to a substrate processing apparatus. Background Art

[0002] Conventionally, there is known a substrate processing apparatus that supplies a processing liquid mixed with nitrogen gas or the like as bubbles to a processing tank (see Patent Document 1).

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Laid-Open No. 2017-69529 Summary of the Invention

[0006] The technical problem that the invention aims to solve

[0007] However, in the above-mentioned substrate processing apparatus, there is room for improvement in terms of uniformly processing the substrate using the processing liquid mixed with bubbles.

[0008] Technical solutions to technical problems

[0009] An object of one aspect of the embodiment is to provide a substrate processing apparatus capable of uniformly etching a substrate.

[0010] A substrate processing apparatus according to one embodiment includes a substrate processing tank, a processing liquid supply nozzle, and a pressure regulating plate. The processing liquid supply nozzle is disposed at the bottom of the substrate processing tank and discharges processing liquid from multiple outlets. The pressure regulating plate is disposed between the processing liquid supply nozzle and the substrates within the substrate processing tank and has multiple holes for circulating processing liquid, thereby regulating the inflow pressure of the processing liquid discharged from the processing liquid supply nozzle. The pressure regulating plate also has ridges protruding from a surface on the processing liquid supply nozzle side, dividing the surface on the processing liquid supply nozzle side into multiple partitioned areas.

[0011] Effects of the Invention

[0012] According to one mode of embodiment, a substrate can be uniformly etched. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 It is a schematic plan view of the substrate processing apparatus according to the first embodiment.

[0014] Figure 2 This is a schematic block diagram showing the configuration of a supply system for an etching processing tank according to the first embodiment.

[0015] Figure 3 This is a schematic plan view of the pressure regulating plate according to the first embodiment.

[0016] Figure 4 yes Figure 3 Schematic cross-sectional view of IV-IV.

[0017] Figure 5 It is a schematic diagram showing the state of bubbles contained in the etching liquid discharged from the processing liquid supply nozzle.

[0018] Figure 6 This is a schematic plan view of the flow rectifying plate according to the first embodiment.

[0019] Figure 7 This is a schematic plan view of a rectifying plate according to a modified example.

[0020] Figure 8 This is a schematic structural diagram of the bubble generating portion according to the first embodiment.

[0021] Figure 9 This is a schematic plan view of a pressure regulating plate according to a second embodiment.

[0022] Figure 10 This is a schematic plan view of a pressure regulating plate according to a third embodiment.

[0023] Figure 11 It is a schematic block diagram showing the structure of a processing tank for etching according to a fourth embodiment.

[0024] Figure 12 It is a schematic structural diagram showing the structure of the bubble generating portion according to the fourth embodiment.

[0025] Figure 13 This is a schematic front view of the bubble generating portion of the fifth embodiment as viewed from the flow direction of the etching liquid.

[0026] Figure 14 yes Figure 13 Schematic cross-section of XIV-XIV.

[0027] Figure 15 It means from Figure 13 The state shown is a diagram of the bubble generating portion with the mixing portion rotated 90 degrees.

[0028] Figure 16 yes Figure 15 Schematic cross-sectional view of XVI-XVI.

[0029] Figure 17 This is a schematic front view of a bubble generating portion according to a modified example as viewed from the flow direction of the etching liquid.

[0030] Figure 18 yes Figure 17 Schematic cross-sectional view of XVIII-XVIII.

[0031] Description of Reference Numerals

[0032] 1. Substrate processing device

[0033] 6 Batch Processing Department

[0034] 8 substrate

[0035] 23 Etching treatment device

[0036] 27 Etching treatment tank

[0037] 44 Nitrogen supply unit

[0038] 45 inner tank (substrate processing tank)

[0039] 47 Pressure regulating plate

[0040] 47A hole

[0041] 47B Edge

[0042] 47C First Edge

[0043] 47D Second Edge

[0044] 47E chamfered part

[0045] 47F Third Edge

[0046] 48 rectifier plate

[0047] 48A Gap

[0048] 49 Processing liquid supply nozzle

[0049] 50 Circulation line (processing liquid supply path)

[0050] 54 Bubble generating unit

[0051] 60 bubble generating unit

[0052] 70 bubble generating unit

[0053] 72 Infiltration Department

[0054] 72B Throttle (regulating)

[0055] 75 Mixing unit (adjustment unit). DETAILED DESCRIPTION

[0056] Hereinafter, embodiments of the substrate processing apparatus disclosed in the present application will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments described below.

[0057] (First embodiment)

[0058] Figure 1As shown, the substrate processing apparatus 1 of the first embodiment includes a carrier carrying in and out unit 2 , a batch forming unit 3 , a batch placing unit 4 , a batch transport unit 5 , a batch processing unit 6 , and a control unit 100 . Figure 1 1 is a schematic plan view of the substrate processing apparatus 1 according to the first embodiment. Here, the description is made with the direction perpendicular to the horizontal direction being the up-down direction.

[0059] The carrier carrying-in and carrying-out section 2 carries in and carries out a carrier 9 accommodating a plurality (eg, 25) of substrates (silicon wafers) 8 arranged vertically in a horizontal posture.

[0060] The carrier loading and unloading section 2 is provided with: a carrier table 10 for loading a plurality of carriers 9 ; a carrier transport mechanism 11 for transporting the carriers 9 ; carrier stacks 12 and 13 for temporarily storing the carriers 9 ; and a carrier placement table 14 for placing the carriers 9 .

[0061] The carrier loading and unloading unit 2 uses the carrier transport mechanism 11 to transport the carrier 9 that has been loaded from the outside into the carrier table 10 to the carrier stack 12 or the carrier placement table 14. In other words, the carrier loading and unloading unit 2 transports the carrier 9 that houses the plurality of substrates 8 before being processed by the batch processing unit 6 to the carrier stack 12 or the carrier placement table 14.

[0062] The carrier stack 12 temporarily stores the carriers 9 for storing the plurality of substrates 8 before being processed by the batch processing unit 6 .

[0063] The plurality of substrates 8 are transported to the carrier stage 14 and unloaded from the carrier 9 that houses the plurality of substrates 8 before being processed by the processing unit 6 by a substrate transport mechanism 15 described later.

[0064] Furthermore, a plurality of substrates 8 processed by the batch processing unit 6 are carried from the substrate transport mechanism 15 to the carrier 9 placed on the carrier mounting table 14 and containing no substrates 8 .

[0065] The carrier loading and unloading unit 2 uses a carrier transport mechanism 11 to transport a carrier 9 placed on a carrier mounting table 14 and containing a plurality of substrates 8 processed by the batch processing unit 6 to a carrier stack 13 or a mounting table 10 .

[0066] The carrier stack 13 temporarily stores a plurality of substrates 8 processed by the batch processing unit 6. The carrier 9 conveyed to the mounting table 10 is conveyed to the outside.

[0067] The batch forming section 3 is provided with a substrate transport mechanism 15 for transporting a plurality (e.g., 25) of substrates 8. In the batch forming section 3, the substrate transport mechanism 15 transports a plurality (e.g., 25) of substrates 8 twice to form a batch consisting of a plurality (e.g., 50) of substrates 8.

[0068] The batch forming section 3 uses the substrate transport mechanism 15 to transport the plurality of substrates 8 from the carrier 9 mounted on the carrier mounting table 14 to the substrate batch mounting section 4 , and places the plurality of substrates 8 on the batch mounting section 4 to form a batch.

[0069] The plurality of substrates 8 forming a batch are processed simultaneously by the batch processing unit 6. When forming a batch, the batch can be formed so that the surfaces of the plurality of substrates 8 with patterns formed thereon face each other, or the batch can be formed so that the surfaces of the plurality of substrates 8 with patterns formed thereon all face one direction.

[0070] Furthermore, the batch forming section 3 uses the substrate transport mechanism 15 to transport a plurality of substrates 8 from the batch processed by the batch processing section 6 and placed on the batch placement section 4 to the carrier 9 .

[0071] The substrate transport mechanism 15 is a substrate support portion for supporting the plurality of substrates 8. The substrate transport mechanism 15 includes two types of substrates: a pre-processing substrate support portion (not shown) for supporting the plurality of substrates 8 before processing and a post-processing substrate support portion (not shown) for supporting the plurality of substrates 8 after processing. This prevents particles adhering to the plurality of substrates 8 before processing from being transferred to the plurality of substrates 8 after processing.

[0072] The substrate transport mechanism 15 can change the postures of the plurality of substrates 8 from a horizontal posture to a vertical posture and from a vertical posture to a horizontal posture during transport of the plurality of substrates 8 .

[0073] The batch placement section 4 temporarily places (stands by) the batch transported between the batch forming section 3 and the batch processing section 6 by the batch transport section 5 on the batch placement table 16 .

[0074] The batch placement section 4 is provided with an inlet-side batch placement table 17 and an outlet-side batch placement table 18 .

[0075] The batches before processing are placed on the inlet-side batch placement table 17 , and the batches after processing are placed on the outlet-side batch placement table 18 .

[0076] On the inlet-side batch placement table 17 and the outlet-side batch placement table 18 , a plurality of substrates 8 for one batch are placed in a vertical orientation in a row.

[0077] The batch transport unit 5 transports the batch between the batch placement unit 4 and the batch processing unit 6 or within the batch processing unit 6 .

[0078] The batch transport unit 5 is provided with a batch transport mechanism 19 for transporting a batch. The batch transport mechanism 19 includes a guide rail 20 arranged along the batch placement unit 4 and the batch processing unit 6, and a moving body 21 that moves along the guide rail 20 while holding the batch.

[0079] The movable body 21 is provided with a substrate holding body 22 that holds a batch of substrates 8 arranged in a vertical orientation in a front-to-back manner.

[0080] The batch transport unit 5 receives the batch placed on the carry-in-side batch placement table 17 via the substrate holding body 22 of the batch transport mechanism 19 , and delivers the received batch to the batch processing unit 6 .

[0081] Then, the batch transport unit 5 receives the batch processed by the batch processing unit 6 via the substrate holding body 22 of the batch transport mechanism 19 , and delivers the received batch to the outgoing batch placement table 18 .

[0082] Furthermore, the batch transport unit 5 uses a batch transport mechanism 19 to transport batches within the batch processing unit 6 .

[0083] The batch processing section 6 performs processes such as etching, cleaning, and drying on a batch consisting of a plurality of substrates 8 arranged in a vertical orientation in a front-to-back manner.

[0084] The batch processing section 6 is provided with two etching apparatuses 23 for etching the batch, a cleaning apparatus 24 for cleaning the batch, a substrate holder cleaning apparatus 25 for cleaning the substrate holder 22, and a drying apparatus 26 for drying the batch. The number of etching apparatuses 23 is not limited to two, and may be one or three or more.

[0085] The etching processing device 23 includes a processing tank 27 for etching, a processing tank 28 for rinsing, and substrate lifting mechanisms 29 and 30.

[0086] The etching tank 27 stores an etching solution (hereinafter referred to as "etching solution"). The rinsing tank 28 stores a rinsing solution (pure water, etc.). The etching tank 27 will be described in detail later.

[0087] The substrate lifting mechanisms 29 and 30 hold a plurality of substrates 8 forming a batch in a vertical orientation arranged front to back.

[0088] The etching processing device 23 receives a batch from the substrate holding body 22 of the batch conveying mechanism 19 via the substrate lifting mechanism 29 , lowers the received batch via the substrate lifting mechanism 29 , and thereby immerses the batch in the etching solution in the processing tank 27 to perform etching processing.

[0089] Thereafter, the etching processing apparatus 23 raises the substrate elevating mechanism 29 to remove the batch from the processing tank 27 , and transfers the batch from the substrate elevating mechanism 29 to the substrate holding body 22 of the batch transport mechanism 19 .

[0090] Then, the substrate lifting mechanism 30 receives the batch from the substrate holding body 22 of the batch transport mechanism 19 , and the received batch is lowered by the substrate lifting mechanism 30 , thereby immersing the batch in the rinsing treatment liquid in the treatment tank 28 for rinsing treatment.

[0091] Thereafter, the etching processing apparatus 23 raises the substrate elevating mechanism 30 to remove the batch from the processing tank 28 , and transfers the batch from the substrate elevating mechanism 30 to the substrate holding body 22 of the batch transport mechanism 19 .

[0092] The cleaning processing device 24 includes a processing tank 31 for cleaning, a processing tank 32 for rinsing, and substrate lifting mechanisms 33 and 34.

[0093] The cleaning tank 31 stores a cleaning solution (SC-1, etc.). The rinsing tank 32 stores a rinsing solution (pure water, etc.). The substrate lifting mechanisms 33 and 34 hold a plurality of substrates 8 in a batch in a vertical orientation.

[0094] The drying processing device 26 includes a processing tank 35 and a substrate lifting mechanism 36 that is lifted and lowered relative to the processing tank 35 .

[0095] A drying process gas (IPA (isopropyl alcohol) or the like) is supplied to the process tank 35. The substrate lifting mechanism 36 holds a plurality of substrates 8 corresponding to one batch in a vertical orientation in a front-to-back arrangement.

[0096] The drying processing device 26 receives a batch from the substrate holder 22 of the batch transport mechanism 19 via the substrate lifting mechanism 36, lowers the received batch via the substrate lifting mechanism 36 and transports it into the processing tank 35, where it performs a drying process on the batch using the drying process gas supplied to the processing tank 35. The drying processing device 26 then raises the batch via the substrate lifting mechanism 36 and transfers the dried batch from the substrate lifting mechanism 36 to the substrate holder 22 of the batch transport mechanism 19.

[0097] The substrate holder cleaning processing device 25 has a processing tank 37, which can supply a processing liquid and a dry gas for cleaning to the processing tank 37. After supplying the processing liquid for cleaning to the substrate holder 22 of the batch transport mechanism 19, the substrate holder 22 is cleaned by supplying a dry gas.

[0098] The control unit 100 controls the operation of each unit of the substrate processing apparatus 1 (carrier loading and unloading unit 2, batch forming unit 3, batch loading unit 4, batch transport unit 5, and batch processing unit 6). The control unit 100 controls the operation of each unit of the substrate processing apparatus 1 based on signals from switches and the like.

[0099] The control unit 100 is constituted by, for example, a computer and includes a computer-readable storage medium 38. The storage medium 38 stores a program for controlling various processes executed in the substrate liquid processing apparatus 1.

[0100] The control unit 100 controls the operation of the substrate liquid processing apparatus 1 by reading and executing the program stored in the storage medium 38. The program is stored in the computer-readable storage medium 38 and can be installed from other storage media into the storage medium 38 of the control unit 100.

[0101] Examples of the computer-readable storage medium 38 include a hard disk (HD), a floppy disk (FD), a compact disk (CD), a magneto-optical disk (MO), and a memory card.

[0102] Next, refer to Figure 2 The etching treatment tank 27 will be described. Figure 2 This is a schematic block diagram showing the structure of the etching treatment tank 27 according to the first embodiment. Here, the description is made with the direction of the horizontal direction in which the plurality of substrates 8 are arranged in the treatment tank 27, that is, the direction perpendicular to the substrates 8, being referred to as the front-to-back direction, and the direction perpendicular to the front-to-back direction being referred to as the left-to-right direction.

[0103] In this embodiment, the etching solution used is a solution obtained by mixing a silicon solution with an aqueous solution of a chemical (phosphoric acid (H3PO4)) of a predetermined concentration (hereinafter referred to as "phosphoric acid aqueous solution"). The etching solution is not limited to a phosphoric acid treatment solution.

[0104] The etching treatment tank 27 includes a phosphoric acid aqueous solution supply unit 40 , a phosphoric acid aqueous solution discharge unit 41 , a pure water supply unit 42 , a silicon supply unit 43 , a nitrogen gas supply unit 44 , an inner tank 45 , an outer tank 46 , a pressure regulating plate 47 , and a rectifying plate 48 .

[0105] The phosphoric acid aqueous solution supply unit 40 includes a phosphoric acid aqueous solution supply source 40A, a phosphoric acid aqueous solution supply line 40B, and a first flow regulator 40C.

[0106] The phosphoric acid aqueous solution supply source 40A is a tank for storing the phosphoric acid aqueous solution. The phosphoric acid aqueous solution supply line 40B connects the phosphoric acid aqueous solution supply source 40A and the outer tank 46 to supply the phosphoric acid aqueous solution from the phosphoric acid aqueous solution supply source 40A to the outer tank 46.

[0107] The first flow regulator 40C is provided in the phosphoric acid aqueous solution supply line 40B and regulates the flow rate of the phosphoric acid aqueous solution supplied to the outer tank 46. The first flow regulator 40C is composed of an on-off valve, a flow control valve, a flow meter, and the like.

[0108] The pure water supply unit 42 includes a pure water supply source 42A, a pure water supply line 42B, and a second flow regulator 42C. The pure water supply unit 42 supplies pure water (DIW) to the outer tank 46 to replenish water evaporated by heating the etching liquid.

[0109] The pure water supply line 42B connects the pure water supply source 42A and the outer tank 46 , and supplies pure water at a predetermined temperature from the pure water supply source 42A to the outer tank 46 .

[0110] The second flow rate regulator 42C is provided in the pure water supply line 42B to regulate the flow rate of the pure water supplied to the outer tank 46. The second flow rate regulator 42C is composed of an on-off valve, a flow control valve, a flow meter, and the like.

[0111] The silicon supply unit 43 includes a silicon supply source 43A, a silicon supply line 43B, and a third flow regulator 43C.

[0112] The silicon supply source 43A is a tank storing a silicon solution, for example, a solution containing dispersed colloidal silicon. The silicon supply line 43B connects the silicon supply source 43A and the outer tank 46 to supply the silicon solution from the silicon supply source 43A to the outer tank 46.

[0113] The third flow regulator 43C is provided in the silicon supply line 43B to regulate the flow rate of the silicon solution supplied to the outer tank 46. The third flow regulator 43C is composed of an on-off valve, a flow control valve, a flow meter, and the like.

[0114] The nitrogen gas supply unit 44 includes a nitrogen gas supply source 44A, a nitrogen gas supply line 44B, and a fourth flow rate regulator 44C. The nitrogen gas supply unit 44 supplies nitrogen gas as an inert gas to the etching liquid.

[0115] The nitrogen supply source 44A is a tank storing nitrogen (N2). The nitrogen supply line 44B connects the nitrogen supply source 44A and a circulation line 50 described later, and supplies nitrogen from the nitrogen supply source 44A to the etching liquid flowing in the circulation line 50.

[0116] The fourth flow regulator 44C is provided in the nitrogen supply line 44B and regulates the flow rate of the nitrogen gas supplied to the circulation line 50. The fourth flow regulator 44C is composed of an on-off valve, a flow control valve, a flow meter, and the like.

[0117] The upper portion of the inner tank 45 is open, and etching liquid is supplied to the vicinity of the upper portion. In the inner tank 45, a batch (a plurality of substrates 8) is immersed in the etching liquid by the substrate lifting mechanism 29, and the substrates 8 are etched. The inner tank 45 constitutes a substrate processing tank.

[0118] Treatment liquid supply nozzles 49 are provided along the front-rear direction below the inner tank 45. Two treatment liquid supply nozzles 49 are provided in the left-right direction. The number of treatment liquid supply nozzles 49 is not limited thereto and may be one or three or more.

[0119] The processing liquid supply nozzle 49 has a plurality of outlets 49A for discharging the etching liquid containing bubbles to the left and right. The outlets 49A are formed in a plurality along the front-back direction. Alternatively, the outlets 49A may discharge the etching liquid, for example, diagonally upward to the left or diagonally upward to the right.

[0120] In the inner tank 45, a pressure regulating plate 47 and a flow regulating plate 48 are provided between the processing liquid supply nozzle 49 and the substrate 8. The pressure regulating plate 47 is provided below the flow regulating plate 48. In other words, the pressure regulating plate 47 is provided between the flow regulating plate 48 and the processing liquid supply nozzle 49.

[0121] The voltage regulating plate 47 and the rectifying plate 48 are formed of a chemically resistant material such as quartz or amorphous carbon.

[0122] Here, refer to Figure 3 and Figure 4 The pressure regulating plate 47 will be described. Figure 3 It is a schematic plan view of the pressure regulating plate 47 according to the first embodiment. Figure 4 It is along Figure 3 Schematic cross-sectional view along line IV-IV.

[0123] The pressure regulating plate 47 has holes 47A formed in the vertical direction. The holes 47A are formed in the left-right direction and the front-back direction in multiple numbers to allow the etching liquid to flow. The pressure regulating plate 47 regulates the amount of liquid supplied from the processing liquid supply nozzle 49 (see Figure 2 ) regulates the inflow pressure of the etching liquid discharged from hole 47A and adjusts the inflow pressure of the etching liquid in the horizontal direction (front-back and left-right directions). In other words, pressure regulating plate 47 can even out the inflow pressure of the etching liquid flowing upward from hole 47A. While hole 47A is circular in shape, this is not limiting and may also be, for example, elliptical or rectangular.

[0124] The pressure regulating plate 47 has a ridge 47B that protrudes from a surface on the processing liquid supply nozzle 49 side (hereinafter referred to as “back surface”) toward the processing liquid supply nozzle 49 .

[0125] The ribs 47B include a first rib 47C formed along the periphery of the back surface of the pressure regulating plate 47 and a second rib 47D formed in the front-rear direction. The first rib 47C is formed along the entire periphery of the back surface of the pressure regulating plate 47.

[0126] The second ribs 47D are formed in a plurality of rows in the horizontal direction, dividing the back surface of the pressure regulating plate 47 into a plurality of regions. In other words, the back surface of the pressure regulating plate 47 is divided into a plurality of regions (hereinafter referred to as "divided regions") by the ribs 47B. The plurality of divided regions are formed in a row in the horizontal direction.

[0127] The back of the pressure regulating plate 47 is divided into a plurality of divided areas by the ridges 47B (the first ridge 47C and the second ridge 47D). Figure 5 As shown, it is possible to suppress bubbles from entering the divided areas ( Figure 5 ) moves to other divided areas. Figure 5 1 is a schematic diagram showing a state of bubbles B contained in the etching liquid discharged from the processing liquid supply nozzle 49 .

[0128] Each partitioned area is formed to include a plurality of holes 47A. Holes 47A have chamfered portions 47E formed at the openings on the side of the processing liquid supply nozzle 49. Chamfered portions 47E are formed along the entire circumference of the openings on the side of the processing liquid supply nozzle 49. This prevents bubbles contained in the etching liquid from remaining near the openings on the back side of the pressure regulating plate 47, thereby improving the flow of the etching liquid in holes 47A.

[0129] Next, refer to Figure 6 The rectifying plate 48 will be described. Figure 6 It is a schematic plan view of the flow straightening plate 48 according to the first embodiment.

[0130] Slits 48A are formed in the straightening plate 48 in the left-right direction. Slits 48A are formed in a shape different from that of holes 47A in the pressure regulating plate 47. Multiple slits 48A are arranged in the front-to-back direction. Slits 48A generate a uniform parallel flow of etching liquid relative to substrate 8 within inner tank 45. In other words, straightening plate 48 straightens the flow of etching liquid.

[0131] The opening of slit 48A on the side of processing liquid supply nozzle 49 is chamfered (not shown), similar to pressure regulating plate 47. The chamfer is formed along the entire circumference of the opening on the side of processing liquid supply nozzle 49. This prevents bubbles contained in the etching liquid from remaining near the opening of slit 48A on the side of processing liquid supply nozzle 49, thereby improving the flow of the etching liquid in slit 48A.

[0132] In addition, you can also Figure 7 As shown, in the rectifying plate 48 , a reinforcing portion 48C formed in the front-rear direction is provided to suppress warping of the partitioning portion 48B that partitions the adjacent slits 48A due to the flow of the etching liquid. Figure 7 It is a schematic plan view of a flow straightening plate 48 according to a modified example.

[0133] return Figure 2The outer tank 46 is provided around the upper portion of the inner tank 45 and has an open upper portion. Etching liquid overflowing from the inner tank 45 flows into the outer tank 46. Furthermore, pure water is supplied from the pure water supply unit 42 to the outer tank 46. Furthermore, silicon solution is supplied from the silicon supply unit 43 to the outer tank 46.

[0134] An insulating plate 46A is installed in the outer tank 46. The insulating plate 46A is removably attached to the outer sidewall of the outer tank 46. The insulating plate 46A is made of a chemically resistant material such as PTFE (polytetrafluoroethylene). The insulating plate 46A keeps the etching solution in the outer tank 46 warm.

[0135] Insulation plate 46A also functions as an adjustment plate for changing the volume of outer tank 46. For example, by installing insulation plate 46A, the volume of outer tank 46 can be reduced compared to when insulation plate 46A is not installed, thereby reducing the amount of etching solution used during the etching process. Furthermore, by installing and removing insulation plates 46A of varying thicknesses from outer tank 46, the volume of outer tank 46 can be adjusted, thereby adjusting the amount of etching solution used during the etching process.

[0136] The outer tank 46 and the inner tank 45 are connected by a circulation line 50. One end of the circulation line 50 is connected to the outer tank 46, and the other end of the circulation line 50 is connected to the processing liquid supply nozzle 49 provided in the inner tank 45. The circulation line 50 constitutes a processing liquid supply path.

[0137] A pump 51, a heater 52, a filter 53, and a bubble generator 54 are provided in the circulation line 50 in this order from the outer tank 46 side. The etching liquid in the outer tank 46 is heated by the heater 52 and flows from the processing liquid supply nozzle 49 into the inner tank 45. The heater 52 heats the etching liquid supplied to the inner tank 45 to a predetermined temperature suitable for etching processing.

[0138] By driving pump 51, the etching liquid is transported from outer tank 46 to inner tank 45 via circulation line 50. Furthermore, the etching liquid overflows from inner tank 45 and flows back into outer tank 46. This forms an etching liquid circulation path 55. Specifically, circulation path 55 is formed by outer tank 46, circulation line 50, and inner tank 45. Within circulation path 55, outer tank 46 is positioned upstream of heater 52 relative to inner tank 45.

[0139] Furthermore, the circulation line 50 between the filter 53 and the bubble generating portion 54 is connected to the nitrogen gas supply line 44B, and nitrogen gas is mixed into the etching liquid flowing in the circulation line 50 .

[0140] like Figure 8As shown, the bubble generating unit 54 is a static mixer that rotates a plurality of components 54A to atomize nitrogen gas mixed into the etching solution from the nitrogen gas supply line 44B, thereby generating bubbles of reduced diameter in the circulation line 50 . Figure 8 It is a schematic configuration diagram of the bubble generating section 54 according to the first embodiment.

[0141] return Figure 2 The phosphoric acid aqueous solution discharge unit 41 discharges the etching solution when all or part of the etching solution used in the etching process is replaced. The phosphoric acid aqueous solution discharge unit 41 includes a discharge line 41A, a fifth flow regulator 41B, and a cooling tank 41C.

[0142] Discharge line 41A is connected to circulation line 50. A fifth flow regulator 41B is provided in discharge line 41A to regulate the discharge volume of the discharged etching liquid. The fifth flow regulator 41B comprises an on-off valve, a flow control valve, a flow meter, and other components. A cooling tank 41C temporarily stores and cools the etching liquid flowing through discharge line 41A.

[0143] Furthermore, the opening and closing of the on-off valves or the opening degree of the flow control valves constituting the first to fifth flow regulators 40C to 41B are changed by operating an actuator (not shown) in response to a signal from the control unit 100. In other words, the on-off valves or flow control valves constituting the first to fifth flow regulators 40C to 41B are controlled by the control unit 100.

[0144] In the substrate processing apparatus 1, the back surface of the pressure regulating plate 47 is divided into a plurality of partitioned areas by ribs 47B. This prevents the movement of bubbles between the partitioned areas, and prevents uneven distribution of bubbles flowing upward through the holes 47A of the pressure regulating plate 47. For example, when the pressure regulating plate 47 is installed with a left-right tilt, the ribs 47B prevent the movement of bubbles between the partitioned areas, making the flow of etching liquid from the holes 47A in each partitioned area uniform. Consequently, the substrate processing apparatus 1 is capable of uniformly etching the surface of the substrate 8.

[0145] Furthermore, in the substrate processing apparatus 1, nitrogen bubbles are micronized by the bubble generating unit 54, and the etching liquid containing the micronized bubbles is discharged from the processing liquid supply nozzle 49 into the inner tank 45. Thus, the substrate processing apparatus 1 can perform etching processing using the etching liquid containing the micronized bubbles, and can uniformly etch the pattern formed on the substrate 8.

[0146] Furthermore, in the substrate processing apparatus 1, a chamfered portion 47E is formed in the opening on the back side of the hole 47A formed in the pressure regulating plate 47. This prevents bubbles contained in the etching liquid from remaining near the opening on the back side of the pressure regulating plate 47. Consequently, the substrate processing apparatus 1 can improve the flowability of the etching liquid in the hole 47A.

[0147] Furthermore, in the substrate processing apparatus 1, a rectifying plate 48 is provided between the substrate 8 and the voltage regulating plate 47 to rectify the flow of the etching liquid through a slit 48A formed in the rectifying plate 48. Thus, the substrate processing apparatus 1 can perform etching processing using the rectified etching liquid.

[0148] (Second embodiment)

[0149] Next, refer to Figure 9 A substrate processing apparatus 1 according to a second embodiment will be described. Figure 9 2 is a schematic plan view of a pressure regulating plate 47 of the second embodiment. Here, the differences from the first embodiment will be mainly described, and the same components as those of the first embodiment are denoted by the same reference numerals, and detailed descriptions thereof will be omitted.

[0150] In the pressure regulating plate 47, the area of the partitioned regions decreases as it moves from the left-right center toward the left-right ends. That is, the area of the partitioned regions formed at the left-right ends is smaller than that of the other partitioned regions.

[0151] Specifically, the distance between the edges 47B (the first edge 47C and the second edge 47D) in the left and right directions is not uniform. The length L1 of the first edge 47C and the second edge 47D that form the dividing areas at both ends of the left and right directions is shorter than the lengths L2 and L3 between the second edges 47D that form other dividing areas.

[0152] The partitioned areas formed at both ends in the left-right direction are divided into two areas except for the discharge port 49A (see FIG. Figure 2 ) In addition to the etching liquid discharged from the inner tank 45 directly flowing into it, the etching liquid that collides with the side walls of the inner tank 45 in the left and right directions also flows into it.

[0153] Therefore, for example, if the divided regions formed at both ends in the horizontal direction have the same area as the other divided regions, more bubbles flow into the divided regions formed at both ends in the horizontal direction, and bubbles flow unevenly into each divided region.

[0154] In the substrate processing device 1, in the pressure regulating plate 47, the area of the divided area formed at both ends in the left and right directions is smaller than the area of the other divided areas. As a result, it is possible to suppress the unevenness of the bubbles flowing into each divided area, and it is possible to suppress the unevenness of the bubbles flowing upward through the hole 47A of the pressure regulating plate 47. Therefore, the substrate processing device 1 can evenly etch the surface of the substrate 8. In addition, the unevenness of the bubbles varies depending on the configuration of the processing liquid supply nozzle 49 or the shape of the inner tank 45. Therefore, the size of the above-mentioned area is an example, and the unevenness of the bubbles can be suppressed by setting the area of the divided areas separately. For example, it can be set so that the area of each divided area is different, and it can also be set so that the area of a part of the divided area is different from that of other divided areas.

[0155] (Third embodiment)

[0156] Next, refer to Figure 10 A substrate processing apparatus 1 according to a third embodiment will be described. Figure 10 3. This is a schematic plan view of a pressure regulating plate 47 of the third embodiment. Here, the differences from the first embodiment will be mainly described, and the same components as those of the first embodiment are denoted by the same reference numerals, and detailed descriptions thereof will be omitted.

[0157] Pressure regulating plate 47 has first ridges 47C as ridges 47B, second ridges 47D formed in the front-rear direction, and third ridges 47F formed in the left-right direction. Second ridges 47D and third ridges 47F are formed to intersect each other. In other words, ridges 47B are formed in a lattice shape.

[0158] As a result, partitioned areas are formed on the back surface of the pressure regulating plate 47 , which are partitioned in the left-right direction and the front-back direction by the ridges 47B.

[0159] Furthermore, among the edges 47B, for example, third edges 47F may be formed in a direction inclined from the left-right direction. In other words, the shape of the divided areas can be any shape, as long as they are formed in a grid pattern. For example, the shape of the divided areas can be square, rectangular, parallelogram, etc., or a combination of different shapes is also possible.

[0160] In the substrate processing apparatus 1, grid-like ridges 47B are formed on the back surface of the pressure regulating plate 47. This prevents bubbles from moving in the left-right and front-back directions within each partitioned area. This further reduces unevenness in bubbles flowing upward through the holes 47A of the pressure regulating plate 47. Consequently, the substrate processing apparatus 1 can etch the surface of the substrate 8 more uniformly.

[0161] (Fourth embodiment)

[0162] Next, refer to Figure 11 A substrate processing apparatus 1 according to a fourth embodiment will be described. Figure 11This is a schematic block diagram showing the structure of an etching treatment tank 27 according to the fourth embodiment. Here, the description will focus on the differences from the first embodiment, and the same components as the first embodiment are denoted by the same reference numerals, and detailed descriptions will be omitted.

[0163] In the substrate processing apparatus 1 of the fourth embodiment, a venturi tube is used as the bubble generating unit 60. The nitrogen gas supply line 44B connects the nitrogen gas supply source 44A and the bubble generating unit 60.

[0164] like Figure 12 As shown, the bubble generating portion 60 includes a reduced diameter portion 61 , a mixing portion 62 , and an expanded diameter portion 63 . Figure 12 1 is a schematic structural diagram showing the structure of the bubble generating portion 60 according to the fourth embodiment. In the bubble generating portion 60, a reduced diameter portion 61, a mixing portion 62, and an expanded diameter portion 63 are provided in this order along the flow direction of the etching liquid.

[0165] The diameter reducing portion 61 is connected to the circulation line 50 and is formed so that the diameter of the pipe becomes smaller as it goes to the downstream side. The mixing portion 62 is provided between the diameter reducing portion 61 and the diameter expanding portion 63 and is connected to the nitrogen supply line 44B (see Figure 11 ) is connected. The mixing portion 62 is formed with a hole 62A through which nitrogen gas supplied from the nitrogen supply line 44B flows. The nitrogen gas supplied by the mixing portion 62 is mixed with the etching liquid. The expanded diameter portion 63 is formed so that the diameter of the tube increases as it goes downstream.

[0166] In the bubble generating portion 60 , when the pressure in the enlarged diameter portion 63 increases, bubbles of nitrogen gas mixed into the etching solution through the mixing portion 62 are collapsed and the bubbles are miniaturized.

[0167] In the substrate processing apparatus 1 , a venturi tube is used as the bubble generating unit 60 , thereby miniaturizing bubbles of nitrogen gas mixed in the etching solution.

[0168] (Fifth embodiment)

[0169] Next, refer to Figure 13 and Figure 14 A substrate processing apparatus 1 according to a fifth embodiment will be described. Figure 13 This is a schematic front view of the bubble generating portion 70 according to the fifth embodiment as viewed from the flow direction of the etching liquid. Figure 14 yes Figure 13 Here, the differences from the fourth embodiment will be mainly described, and the same structures as those in the fourth embodiment are denoted by the same reference numerals and detailed descriptions are omitted.

[0170] In the substrate processing apparatus 1 of the fifth embodiment, a venturi tube capable of changing the flow path area is used as the bubble generating unit 70. The flow path area is the area of a surface perpendicular to the flow direction of the etching liquid.

[0171] The bubble generating section 70 includes a support section 71 and a mixing section 72. The support section 71 is formed in a tubular shape and is connected to the circulation line 50. An insertion hole 71A is formed in the support section 71, into which a portion of the mixing section 72 is inserted. The support section 71 rotatably supports the mixing section 72. The support section 71 forms a flow path for the etching liquid and rotatably supports the mixing section 72.

[0172] The mixing unit 72 and the nitrogen supply line 44B (see Figure 11 ) is connected. Mixing section 72 is formed with holes 72A through which nitrogen gas supplied from nitrogen supply line 44B flows. Mixing section 72 is provided with a plate-shaped throttle portion 72B that protrudes within support section 71, which forms a flow path for the etching liquid. Throttle portion 72B constitutes a regulating section.

[0173] When the mixing portion 72 rotates, the throttle portion 72B rotates together with the mixing portion 72, and Figures 13 to 16 As shown, the flow path area changes with rotation. Figure 13 and Figure 14 The bubble generating portion 70 is in a state where the flow path area is reduced by the throttle portion 72B. Figure 15 It means that the mixing unit 72 is Figure 13 The illustrated state is a diagram of the bubble generating portion 70 rotated 90 degrees. Figure 16 yes Figure 15 Schematic cross-sectional view of XVI-XVI.

[0174] By making the throttle portion 72B Figure 13 The state shown is rotated 90 degrees, as shown in Figure 15 As shown, the flow path area becomes larger.

[0175] The bubble generating portion 70 can change the diameter of the generated bubbles by changing the flow path area using the throttle portion 72B. Figure 13 and Figure 14 When the flow path area is small, Figure 15 and Figure 16 Compared with the state in which the flow path area is larger as shown, the bubbles can be further miniaturized and the diameter of the bubbles can be reduced.

[0176] The mixing unit 72 can be rotated by an actuator such as a motor or manually. The rotation position of the mixing unit 72, that is, the flow path area of the throttle portion 72B, can be appropriately set according to the diameter of the generated bubbles.

[0177] In the substrate processing apparatus 1, the diameter of the bubbles generated by the bubble generating section 70 can be varied by rotating the throttle section 72B to change the flow path area. This allows the diameter of the bubbles contained in the etching solution to be varied according to the specific etching process (e.g., the pattern to be formed on the substrate 8 or the type of etching solution). Consequently, the substrate processing apparatus 1 can perform etching using an etching solution containing bubbles of a diameter suitable for the etching process. Furthermore, the diameter of the bubbles can be varied by rotating the mixing section 72, making it easy for the substrate processing apparatus 1 to adjust the bubble diameter.

[0178] In addition, you can also Figure 17 and Figure 18 As shown, the bubble generating section 70 has a rod-shaped mixing section 75 formed with a hole 75A for nitrogen gas flow protruding into the flow path. The flow path area is changed by changing the protrusion amount of the mixing section 75 into the flow path. Figure 17 This is a schematic front view of a bubble generating portion 70 according to a modified example as viewed from the flow direction of the etching liquid. Figure 18 yes Figure 17 Schematic cross-sectional view of FIG. For example, the bubble generating unit 70 changes the flow path area by moving the mixing unit 75 in the vertical direction. This allows the substrate processing apparatus 1 to change the diameter of the bubbles contained in the etching solution. The mixing unit 75 can be rotated by an actuator such as a motor or manually. The mixing unit 75 constitutes an adjustment unit.

[0179] Furthermore, in the bubble generating portion 70 of the modified example, the protrusion amount may be changed by replacing the mixing portion 75 with a different length, thereby changing the flow path area.

[0180] In addition, the above embodiments may be appropriately combined for use. For example, the substrate processing device 1 may include Figure 9 The pressure regulating plate 47 shown is Figure 13 and Figure 14 The bubble generating portion 70 is shown.

[0181] Furthermore, in the above embodiment, bubble generating units 54, 60, and 70 are provided in the circulation line 50 to discharge the etching solution containing bubbles from the processing liquid supply nozzle 49. However, the present invention is not limited thereto. For example, a bubble generating nozzle separate from the processing liquid supply nozzle 49 may be provided in the inner tank 45, and nitrogen gas may be supplied from the nitrogen supply unit 44 through the bubble generating nozzle to the inner tank 45, thereby generating bubbles within the inner tank 45.

[0182] Other effects and modifications can be easily derived by those skilled in the art. Therefore, the broader aspects of the present invention are not limited to the specific details and representative embodiments shown and described above. Therefore, various modifications are possible without departing from the spirit or scope of the general inventive concept as defined by the scope of the appended claims and their equivalents.

Claims

1. A substrate processing device, characterized in that: include: substrate processing tank; a processing liquid supply nozzle, which is arranged at the lower part of the substrate processing tank and discharges the processing liquid from a plurality of discharge ports; a pressure regulating plate, disposed between the processing liquid supply nozzle and the substrate in the substrate processing tank, having a plurality of holes for circulating the processing liquid, and regulating the inflow pressure of the processing liquid discharged from the processing liquid supply nozzle; and a bubble generating portion or a bubble generating nozzle, wherein the bubble generating portion generates bubbles in a processing liquid supply path for supplying the processing liquid to the processing liquid supply nozzle; the bubble generating nozzle is a nozzle different from the processing liquid supply nozzle and is provided in the substrate processing tank, and is capable of generating bubbles in the substrate processing tank; The pressure regulating plate has an edge protruding from the surface on the side of the processing liquid supply nozzle, which divides the surface on the side of the processing liquid supply nozzle into a plurality of divided areas. When the substrate is processed using the processing liquid mixed with bubbles, the edge suppresses the movement of bubbles between the divided areas, thereby suppressing the unevenness of the bubbles flowing upward through the plurality of holes.

2. The substrate processing device according to claim 1, wherein: The pressure regulating plate has the ribs formed in a lattice shape.

3. The substrate processing device according to claim 1 or 2, wherein: Among the plurality of divided regions, areas of some divided regions are different from areas of other divided regions.

4. The substrate processing device according to claim 1 or 2, wherein: The areas of the plurality of divided regions are different from each other.

5. The substrate processing device according to claim 1 or 2, wherein: Among the plurality of divided regions, an area of a divided region on the side wall of the substrate processing tank is smaller than areas of other divided regions.

6. The substrate processing device according to claim 1 or 2, wherein: The pressure regulating plate has a chamfered portion at an end portion of the hole on the processing liquid supply nozzle side.

7. The substrate processing device according to claim 1 or 2, wherein: It comprises a rectifying plate, which is arranged between the pressure regulating plate and the substrate and has a gap, and rectifying the flow of the processing liquid going to the substrate.

8. The substrate processing device according to claim 1, wherein: The bubble generating portion includes an adjusting portion that adjusts a diameter of the bubble.

9. The substrate processing device according to claim 8, wherein: The adjustment portion changes the flow path area.

Images