Light emitting diode package and method for manufacturing the same

Abstract

A light emitting diode (LED) package includes: an LED having a polygonal shape in a plan view; a light-transmitting layer that directs light from the LED in an upward direction; a wavelength conversion layer that changes the wavelength of light emitted through the light-transmitting layer; and a coating that covers the light-transmitting layer and reflects the light emitted through the light-transmitting layer in an upward direction. In a plan view of the light-transmitting layer, a length from a first point corresponding to a vertex of the LED to a second point corresponding to one end of an extension line of a diagonal line of the LED is greater than or equal to a length from the first point to a third point corresponding to one end of an extension line of a side of the LED.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to Korean Patent Application No. 10-2018-0028310 filed on March 9, 2018 and U.S. Patent Application No. 16 / 129,021 filed on September 12, 2018, the disclosures of which are incorporated herein by reference in their entirety. Technical Field

[0003] Apparatuses and methods according to example embodiments of the inventive concepts relate to a light emitting diode (LED) package having improved light extraction efficiency. Background Art

[0004] LED packages may include a light-transmitting layer and a coating layer located near the LED to improve the extraction efficiency of light emitted by the LED. In recent years, as the size of LEDs has been reduced, there is a need for an LED package including a stable light-transmitting layer and a coating layer that can effectively improve the light extraction efficiency. Summary of the invention

[0005] Example embodiments of the inventive concepts provide a chip-level light emitting diode (LED) package including a light-transmitting layer and a coating layer, which can effectively increase light extraction efficiency, and a method of manufacturing the same.

[0006] Aspects of the inventive concept should not be limited by the exemplary embodiments described herein, and other undescribed aspects will be clearly understood from these embodiments by one of ordinary skill in the art.

[0007] According to an example embodiment, there is provided an LED package, which may include: an LED having an upper surface, a lower surface, and a side surface connecting the upper surface and the lower surface, and configured to generate and emit light, the LED having a polygonal shape in a plan view of the LED package; a light-transmitting layer covering at least some portions of the upper surface and the side surface of the LED, and configured to guide the light emitted from the LED in an upward direction; a wavelength conversion layer arranged on the light-transmitting layer, and configured to change the wavelength of light emitted through the light-transmitting layer; and a coating layer covering the side surface of the light-transmitting layer, and configured to reflect the light emitted through the light-transmitting layer in an upward direction at an interface with the light-transmitting layer. Here, in a cross-sectional view of the LED package, the side surface of the light-transmitting layer may be inclined relative to the side surface of the LED, and in a plan view of the LED package, a length from a first point of the light-transmitting layer corresponding to a vertex of the LED to a second point of the light-transmitting layer corresponding to one end of an extension line of a diagonal line of the LED may be greater than or equal to a length from the first point to a third point of the light-transmitting layer corresponding to one end of an extension line of a side of the LED.

[0008] According to an example embodiment, there is provided an LED package, which may include: an LED having an upper surface, a lower surface, and a side surface connecting the upper surface and the lower surface, and configured to generate and emit light; a light-transmitting layer covering the upper surface and the side surface of the LED, and configured to direct the light emitted from the LED in an upward direction; a wavelength conversion layer arranged on the light-transmitting layer, and configured to change the wavelength of light emitted through the light-transmitting layer; and a coating layer covering the side surface of the light-transmitting layer, and configured to reflect the light emitted through the light-transmitting layer in an upward direction at an interface with the light-transmitting layer. Here, in a plan view of the LED package, the LED may have a polygonal shape, and the light-transmitting layer may have a corresponding polygonal shape, and in a cross-sectional view of the LED package, the side surface of the light-transmitting layer may be inclined relative to the side surface of the LED, and an angle formed by an edge connecting two adjacent side surfaces of the light-transmitting layer and a corresponding edge of the LED may be greater than or equal to an angle formed by the side surface of the light-transmitting layer and the corresponding side surface of the LED.

[0009] According to an example embodiment, an LED package is provided, which may include: an LED having an upper surface, a lower surface, and a side surface connecting the upper surface and the lower surface, and configured to generate and emit light; a light-transmitting layer covering the upper surface and the side surface of the LED; a wavelength conversion layer arranged on the light-transmitting layer and configured to change the wavelength of light emitted through the light-transmitting layer; and a coating covering the side surface of the light-transmitting layer and configured to reflect the light emitted through the light-transmitting layer in an upward direction. In the plan view of the LED package, the LED may have a polygonal shape, and the light-transmitting layer may have a corresponding polygonal shape, and the length from a first point of the light-transmitting layer corresponding to a vertex of the LED to a second point of the light-transmitting layer corresponding to an end of an extension line of a diagonal of the LED may be greater than or equal to the length from the first point to a third point of the light-transmitting layer corresponding to an end of an extension line of an edge of the LED, and in the cross-sectional view of the LED package, the side surface of the light-transmitting layer may be inclined relative to the side surface of the LED, and the angle formed by connecting the edges of two adjacent side surfaces of the light-transmitting layer and the corresponding edges of the LED may be greater than or equal to the angle formed by the side surface of the light-transmitting layer and the corresponding side surface of the LED. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Example embodiments of the inventive concept will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings, in which:

[0011] Figures 1A to 1G is a diagram of a light emitting diode (LED) package according to an example embodiment, including a plan view and a cross-sectional view;

[0012] FIG. 2A to FIG. 2E is a diagram of an LED package according to an example embodiment, including a plan view and a cross-sectional view;

[0013] FIG. 3A to FIG. 3C is a diagram of an LED package according to an example embodiment, including a plan view and a cross-sectional view;

[0014] Figure 4 is a plan view of an LED package according to an example embodiment;

[0015] Figure 5 is a process flow chart of a method of manufacturing an LED package according to an example embodiment;

[0016] 6A to 9B is a diagram of processing operations of a method of manufacturing an LED package according to example embodiments;

[0017] Fig. 10A and Fig. 10B is a diagram of processing operations of a method of manufacturing an LED package according to example embodiments;

[0018] Fig.11A and Fig. 11B is a diagram of processing operations of a method of manufacturing an LED package according to example embodiments;

[0019] FIG. 12A to FIG. 13B is a diagram of processing operations of a method of manufacturing an LED package according to example embodiments;

[0020] Fig.14A and Fig. 14B is a diagram of processing operations of a method of manufacturing an LED package according to example embodiments;

[0021] Fig.15 is a schematic perspective view of a backlight unit (BLU) including an LED package according to example embodiments;

[0022] Fig.16 is a diagram of a direct-type BLU including an LED package according to example embodiments;

[0023] Fig.17 is a diagram of a BLU including an LED package according to example embodiments;

[0024] Fig.18 is a diagram of a direct-type BLU including an LED package according to example embodiments;

[0025] Figures 19 to 21 is a diagram of a BLU including an LED package according to example embodiments;

[0026] Fig. 22 is a schematic exploded perspective view of a display device including an LED package according to an example embodiment;

[0027] Fig.23 is a schematic perspective view of a flat panel lighting device including an LED package according to an example embodiment;

[0028] Fig.24 is a schematic exploded perspective view of a lighting device including an LED package according to an example embodiment;

[0029] Fig.25 is a schematic exploded perspective view of a lighting device including an LED package according to example embodiments; and

[0030] Fig.26 is a schematic exploded perspective view of a pole-type lighting device including an LED package according to example embodiments. DETAILED DESCRIPTION

[0031] Various example embodiments of the inventive concept will be more fully described with reference to the accompanying drawings. However, the inventive concept may be illustrated in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this description will be thorough and complete and will fully convey the scope of the inventive concept to those skilled in the art. In the accompanying drawings, the size and relative size of layers and regions may be exaggerated for clarity.

[0032] It should be understood that when an element or layer is referred to as being "located "above" another element or layer, "located "on" another element or layer, "on" another element or layer, "connected to" or "coupled to" another element or layer, it may be directly located above, located on, on, connected to or coupled to another element or layer, or there may be intermediate elements or intermediate layers. In contrast, when an element is referred to as being "directly located "above", "directly located "on", "directly on", "directly connected to" or "directly coupled to" another element or layer, there are no intermediate elements or intermediate layers. The same reference numerals always refer to the same element. As used herein, the term "and / or" includes any and all combinations of one or more of the relevant listed items.

[0033] It should be understood that, although the terms first, second, third, fourth, etc. can be used herein to describe each element, component, area, layer and / or part, these elements, components, areas, layers and / or parts should not be limited by these terms. These terms are only used to distinguish an element, component, area, layer or part from another element, component, area, layer or part. Therefore, without departing from the concept of the present invention, the first element, the first component, the first area, the first layer (for example, the semiconductor layer of the first conductivity type) or the first part discussed below can be referred to as the second element, the second component, the second area, the second layer (for example, the semiconductor layer of the second conductivity type) or the second part, and vice versa.

[0034] Figure 1A is a plan view of a light emitting diode (LED) package 10 according to an embodiment. Figure 1B is along with Figure 1A The cross-sectional view corresponds to the portion of the cross-section taken along line BB. Figure 1C is along with Figure 1A The cross-sectional view corresponds to the portion of the cross-section taken along line CC. Figure 1D yes Figure 1B The light-emitting structure and its peripheral part are enlarged. Figure 1E to Figure 1G is a cross-sectional view of an LED package according to another embodiment, Figure 1B The LED package 10 has some differences.

[0035] Reference Figures 1A to 1D , the LED package 10 may include an LED 100, which may have a first main surface 101 and a second main surface 102 opposite to each other. The LED 100 may include an electrode pad 130 located on the first main surface 101. The light-transmitting layer 200 may cover at least some portions of the second main surface 102 and the side surface 103 of the LED 100, and be inclined relative to the side surface 103 of the LED 100. The wavelength conversion layer 400 may be located on the light-transmitting layer 200 on the second main surface 102. The coating layer 300 may expose the electrode pad 130 and surround the LED 100 and the light-transmitting layer 200.

[0036] Figure 1B is along with Figure 1A 1 is a schematic cross-sectional view of a portion corresponding to a cross section taken along line BB (that is, a line orthogonal to a pair of side surfaces 103 opposing each other). Figure 1C is along with Figure 1A 1 is a schematic cross-sectional view corresponding to a portion of a cross-sectional view taken along line CC of FIG. 1 (that is, a line coinciding with a diagonal line of the rectangular-shaped LED 100 ).

[0037] like Figure 1B and Figure 1CAs shown, the LED 100 may include a light-transmitting substrate 110 and a light-emitting structure 120 formed on the bottom surface of the light-transmitting substrate 110. The light-transmitting substrate 110 may have a top surface, a bottom surface opposite to the top surface, and a side surface. Here, the top surface of the light-transmitting substrate 110 may form an interface with the light-transmitting layer 200. The light emitted from the light-emitting structure 120 may be extracted to the first surface 401 of the wavelength conversion layer 400 through the light-transmitting layer 200 through the light-transmitting substrate 110. In addition, the light emitted from the side surface 103 of the light-emitting structure 120 may be reflected at the interface between the light-transmitting layer 200 and the coating layer 300, and extracted to the first surface 401 of the wavelength conversion layer 400.

[0038] The light-transmitting substrate 110 may contact the light-emitting structure 120 and support the light-emitting structure 120. The light-transmitting substrate 110 may receive heat generated by the light-emitting structure 120 through a base layer (not shown) and dissipate the received heat to the outside. In addition, the light-transmitting substrate 110 may have a light-transmitting property. The light-transmitting substrate 110 may include a light-transmitting material or include a material that can exhibit a light-transmitting property when the light-transmitting substrate 110 is formed to have a predetermined thickness or thinner.

[0039] The light-transmitting substrate 110 may include an insulating substrate, a conductive substrate, or a semiconductor substrate as required. For example, the light-transmitting substrate 110 may include sapphire (Al 2 O 3 ), gallium nitride (GaN), germanium (Ge), gallium arsenide (GaAs), zinc oxide (ZnO), silicon germanium (SiGe), silicon carbide (SiC), gallium oxide (Ga 2 O 3 ), lithium gallium oxide (LiGaO 2 ), lithium aluminum oxide (LiAlO 2 ) or magnesium aluminum oxide (MgAl 2 O 4 ).

[0040] In some embodiments, a sapphire substrate, a silicon carbide substrate, or a silicon substrate may be mainly used as the light-transmitting substrate 110. A sapphire substrate, which is much cheaper than a silicon carbide substrate, may be more often used.

[0041] The light emitting structure 120 may include a structure formed by stacking a first conductive type semiconductor layer 121, an active layer 122, and a second conductive type semiconductor layer 123 in order. The first conductive type semiconductor layer 121 and the second conductive type semiconductor layer 123 may include a semiconductor doped with a p-type impurity and a semiconductor doped with an n-type impurity, respectively. Conversely, the first conductive type semiconductor layer 121 and the second conductive type semiconductor layer 123 may include a semiconductor doped with an n-type impurity and a semiconductor doped with a p-type impurity, respectively. The first conductive type semiconductor layer 121 and the second conductive type semiconductor layer 123 may include a nitride semiconductor, for example, Al x In y Ga (1-x-y) N(0<x<1, 0<y<1, and 0<x+y<1). However, in addition to the nitride semiconductor, the first conductivity type semiconductor layer 121 and the second conductivity type semiconductor layer 123 may include a GaAs-based semiconductor or a GaP-based semiconductor. In some embodiments, each of the first conductivity type semiconductor layer 121, the active layer 122, and the second conductivity type semiconductor layer 123 may be an epitaxial layer.

[0042] The active layer 122 between the semiconductor layer 121 of the first conductivity type and the semiconductor layer 123 of the second conductivity type may emit light having a predetermined energy due to recombination between electrons and holes. In some embodiments, the active layer 122 may have a multiple quantum well (MQW) structure (e.g., an InGaN / GaN or AlGaN / GaN structure) in which quantum well layers and quantum barrier layers are alternately stacked. In other embodiments, the active layer 122 may have a single quantum well (SQW) structure. The light emitting structure 120 may emit blue light, green light, red light, or infrared (IR) light according to the material of the compound semiconductor included in the light emitting structure 120. However, the wavelength conversion layer 400 formed on the LED 100 may change the wavelength of the light generated by the light emitting structure 120 and output light of various colors.

[0043] The light emitting structure 120 may be electrically connected to the electrode pad 130. Specifically, the first conductive type semiconductor layer 121 and the second conductive type semiconductor layer 123 may be connected to the first electrode pad 131 and the second electrode pad 133, respectively.

[0044] The first electrode 125 may be formed through the second conductivity type semiconductor layer 123 and the active layer 122, and connected to the first conductivity type semiconductor layer 121. The insulating layer 124 may be formed on the outer sidewall of the first electrode 125 and the bottom surface of the second conductivity type semiconductor layer 123, and prevents direct electrical connection of the first electrode pad 131 to the active layer 122. The first electrode 125 may be electrically connected to the first electrode pad 131.

[0045] In addition, the second electrode 126 may be formed through the insulating layer 124 formed on the bottom surface of the second conductive type semiconductor layer 123 and connected to the second conductive type semiconductor layer 123. The second electrode 126 may be electrically connected to the second electrode pad 133.

[0046] Although Figure 1D An example is shown in which the light emitting structure 120 includes a first conductive type semiconductor layer 121, an active layer 122, a second conductive type semiconductor layer 123, an insulating layer 124, a first electrode 125, and a second electrode 126, but the inventive concept is not limited thereto. In addition, the structure of the electrical connection between the light emitting structure 120 and the electrode pad 130 is not limited to Figure 1D Example shown.

[0047] The electrode pad 130 may include a first electrode pad 131 and a second electrode pad 133 located on the first main surface of the LED 100 and configured to supply current to the LED 100. Each of the first electrode pad 131 and the second electrode pad 133 may have any shape. For example, when the LED package 10 is viewed from above, the first electrode pad 131 and the second electrode pad 133 may have a rectangular shape, and they may be arranged to be separated from each other in a first direction (X direction) and extend in a second direction (Y direction). In some embodiments, the first electrode pad 131 and the second electrode pad 133 may not have the same shape.

[0048] The light-transmitting layer 200 may cover at least some portions of the second main surface 102 and the side surface 103 of the LED 100, and extract light emitted through the side surface 103 of the LED 100 toward the first surface 401 of the wavelength conversion layer 400. That is, before the light reaching the side surface 103 of the LED 100 is reflected by the side surface 103 of the LED 100 and disappears in the LED 100, the light may be emitted outside the LED 100 through the light-transmitting layer 200. As described above, the LED package 10 may include the light-transmitting layer 200 that suppresses optical loss, so that the light extraction efficiency of the LED package 10 may be effectively increased.

[0049] In another embodiment, the light-transmitting layer 200 may not completely cover the side surface 103 of the LED 100, but only cover some portions of the side surface 103 of the LED 100. Therefore, in some embodiments, the side surface 103 of the LED 100 may be exposed from the light-transmitting layer 200 near the edge of the first major surface 101 of the LED 100. However, since some portions of the side surface 103 exposed through the light-transmitting layer 200 are covered by the coating layer 300, all portions of the side surface 103 of the LED 100 may not be exposed outside the LED package 10. That is, the thickness 300T of the coating layer 300 may be greater than the thickness 200T of the light-transmitting layer 200.

[0050] In some embodiments, the thickness 200T of the light-transmitting layer 200 may be about 100 μm to about 350 μm, and the thickness 300T of the coating layer 300 may be about 150 μm to about 500 μm. Since the thickness 300T of the coating layer 300 is the sum of the thickness 200T of the light-transmitting layer 200 and the thickness of the electrode pad 130, the ratio of the thickness 200T of the light-transmitting layer 200 to the thickness 300T of the coating layer 300 may be about 1:1.1 to about 1:2.

[0051] As described above, the light-transmitting layer 200 may be a member configured to emit light reaching the side surface 103 of the LED 100 to the outside of the LED 100 before the light is reflected by the side surface 103 of the LED 100 and disappears inside the LED 100. Therefore, when the area of ​​the light-transmitting layer 200 changes rapidly depending on the position on the side surface 103 of the LED 100, the optical characteristics may change at the interface between the LED 100 and the light-transmitting layer 200.

[0052] That is, a portion of the light emitted through the light emitting structure 120 and reaching the side surface 103 of the LED 100 may not be reflected at the interface between the light-transmitting layer 200 and the coating layer 300, but disappear. As a result, the intensity of the light reflected through the interface between the thin portion of the light-transmitting layer 200 and the coating layer 300 may be less than the intensity of the light reflected through the interface between the thick portion of the light-transmitting layer 200 and the coating layer 300. Therefore, the light extraction efficiency of the LED package 10 may be reduced, and the emission characteristics of the LED package 10 may be changed.

[0053] In other words, when viewed from above, that is, in a plan view, the area of ​​the light-transmitting layer 200 formed at the corner portion of the LED 100 may be greatly different from the area of ​​the other portions of the light-transmitting layer 200. In this case, when the light reaches the side surface 103 on which the light-transmitting layer 200 is formed to have a relatively small area, the extraction efficiency of the light reaching the wavelength conversion layer 400 through the light-transmitting layer 200 may be reduced.

[0054] Therefore, in the LED package 10 according to the example embodiment, when viewed from above, the light-transmitting layer 200 may be formed on the side surface 103 of the LED 100 so that the length 200C of the diagonal line of the light-transmitting layer 200 is equal to or greater than the length 200B of each side of the light-transmitting layer 200, or, in the cross-sectional view of the LED package 10, the angle θ formed by connecting the edges of two adjacent side surfaces of the light-transmitting layer 200 and the corresponding edges of the LED 100 is θ. B is greater than or equal to the angle θ formed by the side surface of the light-transmitting layer 200 and the corresponding side surface of the LED 100 A (Return to reference Figure 1B and Figure 1C). Therefore, the light-transmitting layer 200 may be prevented from being formed to have a small width at the corner portion of the LED 100. When viewed from above, the center of the LED 100 may coincide with the center of the light-transmitting layer 200, the LED 100 may have a square shape having a first area, and the light-transmitting layer 200 may have a second area greater than the first area and have the same shape as the shape of the LED 100. Therefore, the first area of ​​the LED 100 may be about 19.8% to about 82.6% of the second area of ​​the light-transmitting layer 200.

[0055] In some embodiments, the first direction (X direction) length 100X of the side of the LED 100 may be about 400 μm to about 3000 μm. The second direction (Y direction) length of the side of the LED 100 may be equal to or different from the first direction (X direction) length 100X of the side of the LED 100. In other words, when viewed from above, the LED 100 may have a square or rectangular shape.

[0056] In addition, the first direction (X direction) length 200X of the light-transmitting layer 200 from the corner of the LED 100, the second direction (Y direction) length 200Y of the light-transmitting layer 200 from the corner of the LED 100, and the diagonal length 200D of the light-transmitting layer 200 from the corner of the LED 100 will now be described. Each of the first direction (X direction) length 200X and the second direction (Y direction) length 200Y from the corner of the LED 100 may be about 100 μm to about 1500 μm. Based on the Pythagorean theorem, the diagonal length 200D may be about 140 μm to about 2100 μm. The first direction (X direction) length 200X of the light-transmitting layer 200 from the corner of the LED 100 may be equal to or different from the second direction (Y direction) length 200Y of the light-transmitting layer 200 from the corner of the LED 100. That is, the length of one side of the light transmitting layer 200 may be about 600 μm to about 6000 μm.

[0057] The coating 300 may have a single-layer or multi-layer structure formed by alternately stacking dielectric layers having different refractive indices. For example, the coating 300 may include a dielectric selected from the group consisting of SiO 2 MgF 2 、SiN、TiO 2 and Nb 2 O 5 A single layer of at least one of the group consisting of, or a multilayer structure formed by alternately stacking the above materials.

[0058] The wavelength conversion layer 400 may include a phosphor. The phosphor may be a resin containing a wavelength conversion material. For example, the wavelength conversion material may be a fluorescent material, and the resin may be a silicone resin, an epoxy resin, or a resin mixture thereof. In some embodiments, the wavelength conversion layer 400 may have electrical insulation properties.

[0059] The wavelength conversion layer 400 may include at least two materials capable of providing light having different wavelengths. In some embodiments, the wavelength conversion layer 400 may include a material containing a mixture of green phosphor powder and red phosphor powder. In other embodiments, the wavelength conversion layer 400 may have a structure in which a plurality of wavelength conversion layers are stacked. For example, the wavelength conversion layer 400 may have a structure in which a first wavelength conversion layer configured to output green light and a second wavelength conversion layer configured to output red light are stacked. Therefore, the wavelength conversion layer 400 may convert the light generated by the light emitting structure 120 into white light or light having a specific wavelength.

[0060] The side surface of the wavelength conversion layer 400 may be coplanar with the side surface of the coating layer 300 due to a manufacturing process described later. That is, when viewed from above, the LED package 10 may expose only the wavelength conversion layer 400 .

[0061] When viewed from above, the center of the light-transmitting layer 200 may coincide with the center of the wavelength conversion layer 400 , and the wavelength conversion layer 400 may have a square shape in which an area occupied by the wavelength conversion layer 400 is larger than an area occupied by the light-transmitting layer 200 .

[0062] Reference Figure 1E , the LED package 11 can be Figures 1A to 1D The LED package 10 of FIG. 1 is similar to the LED package 10 of FIG. 1 , except that a portion of the electrode pad 130 protrudes from the coating layer 300. The exposed surface of the electrode pad 130 may protrude from the coating layer 300. Some portions of the side surface of the electrode pad 130 may not be covered by the coating layer 300 but exposed. That is, the electrode pad 130 may protrude outward more than the coating layer 300.

[0063] Reference Figure 1F , the LED package 12 can be Figure 1E The LED package 11 of the embodiment of the present invention is similar to the LED package 11 of the embodiment of the present invention, except that the coating layer 300 has an inclined surface so that the thickness of the coating layer 300 can increase toward the side surface of the electrode pad 130. The inclined surface of the coating layer 300 can contact the side surface of the electrode pad 130 and have a concave curved shape along the side surface of the electrode pad 130. The portion of the coating layer 300 that contacts the side surface of the electrode pad 130 can have a meniscus shape along the side surface of the electrode pad 130.

[0064] Reference Figure 1G , the LED package 13 can be Figure 1EThe LED package 11 is similar to the LED package 11, except that the coating layer 300 has an inclined surface so that the thickness of the coating layer 300 can decrease toward the side surface of the electrode pad 130. The inclined surface of the coating layer 300 can contact the side surface of the electrode pad 130 and have a convex curved shape along the side surface of the electrode pad 130.

[0065] Figure 2A is a plan view of an LED package 20 according to example embodiments. Figure 2B is along with Figure 2A A cross-sectional view of a portion corresponding to a cross-sectional view taken along line BB. Figure 2C is along with Figure 2A A cross-sectional view of the portion corresponding to the cross-sectional view taken along line CC. Figure 2D and Figure 2E is a cross-sectional view of an LED package according to another exemplary embodiment, Figure 2B The LED package 20 has some differences.

[0066] Reference FIG. 2A to FIG. 2C , the LED package 20 can be Figures 1A to 1D The LED package 10 of FIG. 1 is similar to the LED package 10 of FIG. 10, except that the light-transmitting layer 200 covers the entire side surface 103 of the LED 100 and reaches the same level as the exposed surface of the electrode pad 130. The same reference numerals are used to indicate the same Figures 1A to 1C The same components as those in FIG. 1 and 1 are omitted for simplicity. Figures 1A to 1C Same description in .

[0067] The light-transmitting layer 200 may be located in the LED package 20 at the same level as the exposed surface of the electrode pad 130. That is, the thickness 200T of the light-transmitting layer 200 may be substantially equal to the thickness 300T of the coating layer 300.

[0068] In this case, the side surface of the electrode pad 130 may be surrounded by the electrode coating 305. The above structure may be obtained by forming the light-transmitting layer 200 after manufacturing the LED 100 in which the electrode coating 305 is pre-formed. In the LED package 20, since the light-transmitting layer 200 is formed on all the side surfaces 103 of the LED 100, the light extraction efficiency of the LED package 20 may be effectively increased.

[0069] Reference Figure 2D , the LED package 21 can be FIG. 2A to FIG. 2C The LED package 20 of the embodiment of the present invention is similar to the LED package 20 of the embodiment of the present invention, except that the light-transmitting layer 200 is formed to cover only a portion of the side surface of the electrode coating layer 305. Therefore, the light-transmitting layer 200 may be aligned with a level higher than the exposed surface of the electrode pad 130 by a predetermined distance. That is, the thickness 300T of the coating layer 300 may be greater than the thickness 200T of the light-transmitting layer 200.

[0070] Reference Figure 2E , the LED package 22 can be FIG. 2A to FIG. 2C The LED package 20 of the embodiment of the present invention is similar to the LED package 20 of the embodiment of the present invention, except that only some portions of the side surface of the electrode pad 130 are surrounded by the electrode coating 305. Therefore, the electrode coating 305 may be covered by the coating 300. In addition, the light-transmitting layer 200 may be aligned at a level higher than the exposed surface of the electrode pad 130 by a predetermined distance. The thickness 300T of the coating 300 may be greater than the thickness 200T of the light-transmitting layer 200.

[0071] Figure 3A is a plan view of an LED package 30 according to example embodiments. Figure 3B is along with Figure 3A A cross-sectional view of a portion corresponding to a cross-sectional view taken along line BB. Figure 3C is along with Figure 3A A cross-sectional view of the portion corresponding to the cross-sectional view taken along line CC.

[0072] Reference FIG. 3A to FIG. 3C , the LED package 30 can be Figures 1A to 1D The same reference numerals are used to indicate the same LED package 10 as the LED package 10, except that the interlayer 500 is located between the light-transmitting layer 200 and the wavelength conversion layer 400. Figures 1A to 1C For simplicity, the same components as those in Figures 1A to 1C Same description in .

[0073] Now, two functions of the interlayer 500 included in the LED package 30 according to the inventive concept will be described.

[0074] First, an LED package 30 having a gradient refractive index effect may be formed to increase the efficiency of extracting light generated by the light emitting structure 120 to outside the LED package 30. In some embodiments, the critical angle at which light can be emitted may be reduced due to the large difference in refractive index between the light-transmitting substrate 110 (e.g., a sapphire substrate having a refractive index of about 1.75) and the wavelength conversion layer 400 (having a refractive index of about 1.48), so that optical loss due to total internal reflection may occur. Therefore, in order to reduce the optical loss due to total internal reflection, an interlayer 500 including a material having an intermediate refractive index between the refractive index of the light-transmitting substrate 110 and the refractive index of the wavelength conversion layer 400 may be inserted therebetween, thereby effectively increasing the light extraction efficiency. The layer for obtaining the gradient refractive index effect may be divided into four layers including the light-transmitting layer 200. A material having a higher refractive index than the interlayer 500 may be selected as a raw material included in the light-transmitting layer 200.

[0075] That is to say, an LED package 30 with a gradient refractive index effect can be formed by selecting corresponding materials, so that the refractive index of the light-transmitting substrate 110 is higher than the refractive index of the light-transmitting layer 200, the refractive index of the light-transmitting layer 200 is higher than the refractive index of the interlayer 500, and the refractive index of the interlayer 500 is higher than the refractive index of the wavelength conversion layer 400.

[0076] Secondly, the interlayer 500 may be used as a buffer layer configured to control the shape of the light-transmitting layer 200. If the interlayer 500 is not present, the cross-sectional shape of the light-transmitting layer 200 may be determined by the surface tension between the raw material included in the light-transmitting layer 200 and the wavelength conversion layer 400, and the light-transmitting layer 200 may be formed into a concave shape according to the difference in surface tension of the material. In this case, the simulation results show that the light extraction efficiency may be reduced by up to 1.8%. Therefore, in order to overcome the above phenomenon, the interlayer 500 may be used as a buffer layer configured to prevent the light-transmitting layer 200 from being formed into a concave cross-sectional shape.

[0077] When the LED package 30 is viewed from above, the center of the LED 100, the center of the light-transmitting layer 200, and the center of the interlayer 500 may coincide with each other, the LED 100 may have a square shape (which has a first area), the interlayer 500 may have an N-gon (N is a natural number equal to or greater than 4) which has a second area greater than the first area, and the light-transmitting layer 200 may be formed to have the same area and shape as the interlayer 500.

[0078] In some embodiments, when viewed from above, the interlayer 500 may have a square shape, and corresponding corners of the LED 100 , the light-transmitting layer 200 , the interlayer 500 , and the wavelength conversion layer 400 may be arranged in a straight line.

[0079] In addition, on the second major surface 102 of the LED 100 , the thickness 500T of the interlayer 500 may be greater than the thickness 200TB of the light-transmitting layer 200 formed between the light-transmitting substrate 110 and the interlayer 500 .

[0080] Figure 4 is a plan view of an LED package 40 according to example embodiments.

[0081] Reference Figure 4 , the LED package 40 can be Figure 1A The same reference numerals are used to indicate the LED package 10 of FIG. 1 , except that the planar shape of the light-transmitting layer 200 is a hexagon. Figure 1A For simplicity, the same components as those in Figure 1A Same description in .

[0082] When the LED package 40 is viewed from above, the center of the LED 100 may coincide with the center of the light-transmitting layer 200, the LED 100 may have a square shape having a first area, and the light-transmitting layer 200 may have an N-gon (N is a natural number equal to or greater than 4) having a second area greater than the first area.

[0083] Although Figure 4 An example is shown in which the light-transmitting layer 200 has a hexagonal shape (N=6), but the inventive concept is not limited thereto. As described below, in the LED package 40, the light-transmitting layer 200 may be formed into a desired shape corresponding to the shape of the LED 100 using a screen printing process. Therefore, the LED package 40 having improved light extraction efficiency may be efficiently manufactured.

[0084] Figure 5 is a process flow chart of a method of manufacturing an LED package according to example embodiments.

[0085] Reference Figure 5 , a method for manufacturing an LED package may include the following process steps. When implementing an embodiment, a specific process step may be performed differently from the described process steps. For example, two sequentially described processes may be performed substantially simultaneously or in reverse order.

[0086] The method may include: manufacturing an LED including a first main surface and a second main surface opposite to each other and including an electrode pad located on the first main surface (S110); applying a wavelength conversion layer in an N-angular plane shape (N is a natural number equal to or greater than 4) with a liquid light-transmitting material to a predetermined thickness (S120); positioning the second main surface of the LED on the light-transmitting material to contact the light-transmitting material (S130); applying a predetermined pressure to the LED so that the light-transmitting material covers at least some portions of the second main surface and the side surface of the LED and is inclined relative to the side surface of the LED (S140); curing the light-transmitting material to form a light-transmitting layer (S150); forming a coating to expose the electrode pad and surround the LED and the light-transmitting layer (S160); and cutting the coating and the wavelength conversion layer outside the light-transmitting layer (S170).

[0087] Typically, a chip scale package (CSP) type LED package may include a light-transmitting layer and a coating around the LED to improve the extraction efficiency of light emitted by the LED. In recent years, the reduction in size of LEDs has led to a demand for LED packages including stable light-transmitting layers and coatings that can effectively improve light extraction efficiency.

[0088] Therefore, the method for manufacturing an LED package may include forming a light-transmitting layer in a shape corresponding to the shape of the LED, thereby effectively increasing the light extraction efficiency of the LED. In addition, in the method for manufacturing an LED package, the light-transmitting layer included in the LED package may be formed in a desired shape. Therefore, an LED package with improved light extraction efficiency can be effectively produced.

[0089] The following will refer to 6A to 9B Describe the technical characteristics of the corresponding operation in detail.

[0090] 6A to 9B are diagrams illustrating process operations of a method of manufacturing an LED package according to example embodiments.

[0091] Specifically, Figure 6B , Figure 7B , Figure 8B and Fig. 9B They are respectively along Fig. 6A , Fig. 7A , Fig. 8A and Fig.9A The cross-sectional view of the portion corresponding to the cross-sectional view taken along the line BB of FIG. 6A to 9B DETAILED DESCRIPTION OF THE REFERENCE ART Figures 1A to 1D A method of manufacturing the LED package 10 is described.

[0092] Reference Fig. 6A and Figure 6B , a second surface 402 of the wavelength conversion film 400S opposite to the first surface 401 may be coated with a plurality of light-transmitting material piles 200S (e.g., liquid resin material) having isolated planar squares. In this case, by using a relatively large wavelength conversion film 400S, the plurality of light-transmitting material piles 200S having planar squares may be arranged on a one-piece wavelength conversion film 400S. When the distance between adjacent light-transmitting material piles 200S having planar squares is too large, the number of LED packages that can be formed simultaneously may be reduced, and the production efficiency of the LED packages may be reduced. Therefore, the light-transmitting material piles 200S may be arranged at appropriate intervals.

[0093] The light-transmitting material stack 200S may be formed to have a predetermined shape on the second surface 402 of the wavelength conversion film 400S by coating using a screen printing process, an imprinting process, or a photolithography process.

[0094] Here, the light-transmitting material stack 200S can be formed into a shape corresponding to the shape of the LED, thereby effectively improving the light extraction efficiency of the LED. In addition, the light-transmitting material stack 200S can be formed into a desired shape using a screen printing process, thereby effectively producing an LED package with improved light extraction efficiency.

[0095] Reference Fig. 7A and Figure 7B , the LED 100 may be arranged on a plurality of light-transmitting material piles 200S having a flat square shape. Only by arranging the LED 100 on the plurality of light-transmitting material piles 200S having a flat square shape, or by applying pressure to the LED 100 after arranging the LED 100 on the plurality of light-transmitting material piles 200S, the light-transmitting material may rise to the side surface 103 of the LED 100, and the outer surface of the light-transmitting material pile 200S may be deformed in a downwardly expanded shape by surface tension.

[0096] The planar shape of each of the light-transmitting material stacks 200S can be deformed by arranging the LED 100 on each of the light-transmitting material stacks 200S or applying pressure to become almost equal to the shape included in the LED package (refer to Fig. 9B 10) in the light-transmitting layer (refer to Fig. 9B 200 in FIG. 200). In addition, the light-transmitting material may be provided as a film type between the wavelength conversion film 400S and the light-transmitting substrate 110 of the LED 100. The light-transmitting layer formed by curing the light-transmitting material (see FIG. 200 ) Fig. 9B 200 in FIG. 200S) may be used as an adhesive between the wavelength conversion film 400S and the LED 100. The thickness of the light-transmitting material may be determined by considering the adhesion and heat dissipation characteristics of the LED 100.

[0097] Reference Fig. 8A and Figure 8B , by curing the light-transmitting material (refer to Figure 7B After forming the light-transmitting layer 200 by forming the second surface 402 of the wavelength conversion film 400S, the coating layer 300 may be formed on the outer surface of the light-transmitting layer 200 and a portion of the second surface 402 of the wavelength conversion film 400S that is not covered with the light-transmitting layer 200. In addition, the coating layer 300 may be formed on a portion of the light-emitting structure 120 of the LED 100 that is not covered with the electrode pad 130. In this case, the thickness of the coating layer 300 may be controlled so that a portion of the electrode pad 130 is exposed by the coating layer 300. That is, the level of the uppermost surface of the coating layer 300 may be equal to or lower than the level of the top surface of the electrode pad 130 based on the second surface 402 of the wavelength conversion film 400S. In this case, a plurality of light-transmitting layers 200 formed around a plurality of LEDs 100 located on the wavelength conversion film 400S may be completely covered by one continuous coating layer 300.

[0098] Reference Fig.9A and Fig. 9BThe coating layer 300 and the wavelength conversion film 400S may be cut along the middle region (e.g., scribe line) between the adjacent LEDs 100 using a cutting process. The coating layer 300 and the wavelength conversion film 400S may be physically divided into corresponding LED packages 10 using a cutting process. In the above method, a plurality of LED packages 10, each of which includes an LED 100, a light-transmitting layer 200, a coating layer 300, and a wavelength conversion layer 400, may be manufactured simultaneously.

[0099] As a result, the LED package 10 can be manufactured in which the length of the diagonal line of the light-transmitting layer 200 is greater than the length of each side of the light-transmitting layer 200 when viewed from above and the side surface of the wavelength conversion layer 400 is coplanar with the side surface of the coating layer 300 .

[0100] Fig. 10A and Fig. 10B 1 is a diagram of processing operations of a method of manufacturing an LED package 10 according to an example embodiment. Specifically, Fig. 10B is along with Fig. 10A The cross-sectional view of the portion corresponding to the cross-sectional view taken along the line BB of FIG. Fig. 10A and Fig. 10B Describe manufacturing reference Figures 1A to 1D A method of an LED package 10 is described.

[0101] Reference Fig. 10A and Fig. 10B , a plurality of light-transmitting material stacks 200S may be formed on the second surface 402 of the wavelength conversion film 400S. When the light-transmitting material stacks 200S include a light-transmitting resin material, the border and the interior of the region where the LED 100 is to be arranged may be coated with the light-transmitting material (eg, liquid resin material) using a dispenser.

[0102] In other words, when applying the light-transmitting material, a plurality of point shapes can be formed using a distribution process so that the virtual outermost connecting line 200L has an N-angular plane shape (N is a natural number equal to or greater than 4), or a plurality of spherical light-transmitting material piles can be formed in a matrix form to correspond to each LED 100.

[0103] When the light-transmitting material is coated with a liquid resin material by a dispensing process, the light-transmitting material may be spread on the wavelength conversion film 400S while being formed into a dot shape due to surface tension. The viscosity and coating amount of the liquid resin material may be controlled so that each of the light-transmitting material piles 200S has a convex dot shape. In addition, the viscosity of the liquid resin material may be controlled by adding a filler.

[0104] Since the subsequent processing is the same as the above reference 7A to 9B The described processing is the same and a detailed description thereof is omitted here.

[0105] Fig.11A and Fig. 11B 2 is a diagram illustrating process operations of a method of manufacturing an LED package 20 according to example embodiments.

[0106] Specifically, Fig. 11B is along with Fig.11A A cross-sectional view of a portion corresponding to a cross-sectional view taken along line BB.

[0107] Will refer to Fig.11A and Fig. 11B Describing the manufacturing process according to example embodiments FIG. 2A to FIG. 2C A method of an LED package 20 is described.

[0108] The light-transmitting material stack 200S may be formed on the second surface 402 of the wavelength conversion film 400S, and the LED 100 may be arranged so that the level of the uppermost surface of the light-transmitting material stack 200S is the same as the level of the exposed surface of the electrode pad 130. In this case, the side surface of the electrode pad 130 may be surrounded by the electrode coating 305 in the LED 100. Figure 8B 300 in FIG. 1 ), the electrode coating layer 305 may not be formed, but the electrode coating layer 305 may be formed in the process of forming the LED 100.

[0109] The above structure can be obtained by forming LED 100 with electrode coating 305 and then arranging LED 100 on light-transmitting material stack 200S. Since light-transmitting material completely covers the side surface of LED 100, light extraction efficiency of LED package 20 can be effectively increased.

[0110] Since the other processes are the same as the above-described processes of the method of manufacturing the LED package 10 , a detailed description thereof is omitted here.

[0111] FIG. 12A to FIG. 13B 2 is a diagram illustrating process operations of a method of manufacturing an LED package 30 according to example embodiments.

[0112] Specifically, Fig. 12B and Fig. 13B are respectively along Fig. 12A and Fig.13A The cross-sectional view of the portion corresponding to the cross-sectional view taken along the line BB of FIG. FIG. 12A to FIG. 13B Describing the manufacturing process according to example embodiments FIG. 3A to FIG. 3C A method of an LED package 30 is described.

[0113] Reference Fig. 12A and Fig. 12B, a plurality of interlayers 500 having a planar rectangular shape may be formed on the second surface 402 of the wavelength conversion film 400S. In this case, the interlayer 500 may be arranged on one wavelength conversion film 400S using a relatively large wavelength conversion film 400S. In addition, when the distance between adjacent interlayers in the interlayer 500 is too large, the number of LED packages that can be formed simultaneously is reduced, and the mass production efficiency of the LED packages is reduced. Therefore, the interlayer 500 may be arranged at appropriate intervals. As described above, the refractive index of the material included in the interlayer 500 may be selected in consideration of the relationship with other layers.

[0114] Reference Fig.13A and Fig. 13B , the interlayer 500 may be coated with the light-transmitting material stack 200S. If the interlayer 500 is not present, the cross-sectional shape of the light-transmitting material stack 200S may be determined by the surface tension between the raw material included in the light-transmitting material stack 200S and the wavelength conversion film 400S. A concave light-transmitting material stack 200S may be formed according to the difference in surface tension of the materials. In order to overcome the above phenomenon, the interlayer 500 may be used as a buffer layer, which is configured to prevent the light-transmitting material 200S from being formed into a concave cross-sectional shape.

[0115] Since the other processes are the same as the above-described processes of the method of manufacturing the LED package 10 , a detailed description thereof is omitted here.

[0116] Fig.14A and Fig. 14B 40 are diagrams illustrating process operations of a method of manufacturing an LED package 40 according to example embodiments.

[0117] Specifically, Fig. 14B is along with Fig.14A A cross-sectional view of a portion corresponding to a cross-sectional view taken along line BB.

[0118] Will refer to Fig.14A and Fig. 14B Describe manufacturing reference Figure 4 A method of an LED package 40 is described.

[0119] When viewed from above, the light-transmitting material stack 200S may be formed in an N-shaped polygon (N is a natural number equal to or greater than 4) on the second surface 402 of the wavelength conversion film 400S. Fig.14A An example is shown in which each of the light-transmitting material piles 200S has a hexagonal shape (N=6), but the inventive concept is not limited thereto. The light-transmitting material piles 200S may be formed into a desired shape corresponding to the shape of the LED 100 , and thus may effectively increase light extraction efficiency of the LED package 40 .

[0120] Since the other processes are the same as the above-described processes of the method of manufacturing the LED package 10 , a detailed description thereof is omitted here.

[0121] Fig.15 is a schematic perspective view of a backlight unit (BLU) 2100 including an LED package according to example embodiments.

[0122] Specifically, the BLU 2100 may include a light guide plate (LGP) 2140 and a light source module 2110 disposed on both side surfaces of the LGP 2140. In addition, the BLU 2100 may further include a reflective plate 2120 located below the LGP 2140. The BLU 2100 according to the current embodiment may be an edge-entry BLU. In some embodiments, the light source module 2110 may be disposed only on one side surface of the LGP 2140, or also on the other side surface thereof. The light source module 2110 may include a printed circuit board (PCB) 2101 and a plurality of light sources 2105 mounted on the top surface of the PCB 2101. The light source 2105 may be any one of the LED packages 10 to 13, 20 to 22, 30, and 40 according to the above-described embodiments.

[0123] Fig.16 is a diagram of a BLU 2200 including an LED package according to example embodiments.

[0124] Specifically, the BLU 2200 may include a light diffusion plate 2240 and a light source module 2210 arranged below the light diffusion plate 2240. In addition, the BLU 2200 may further include a bottom case 2260 that may be disposed below the light diffusion plate 2240 and include the light source module 2210. The BLU 2200 of the current embodiment may be a direct type BLU.

[0125] The light source module 2210 may include a PCB 2201 and a plurality of light sources 2205 mounted on a top surface of the PCB 2201. Each of the light sources 2205 may be any one of the LED packages 10 to 13, 20 to 22, 30, and 40 according to the above embodiments.

[0126] Fig.17 is a diagram of a BLU 2300 including an LED package according to example embodiments.

[0127] Specifically, Fig.17 An example of arrangement of a light source 2305 in a direct-type BLU 2300 is shown. The light source 2305 may be any one of the LED packages 10 to 13, 20 to 22, 30, and 40 according to the above-described embodiments.

[0128] In some embodiments, the direct-lit BLU 2300 may include a plurality of light sources 2305 arranged on a substrate 2301. The arrangement structure of the light sources 2305 may be a matrix structure in which each of the rows and columns is formed in a zigzag shape. That is, a first matrix may include a plurality of light sources 2305 arranged in a straight line in a plurality of rows and columns, and a second matrix having the same shape as the first matrix may be located inside the first matrix. Therefore, it can be understood that each of the light sources 2305 of the second matrix is ​​located within a square formed by four adjacent light sources 2305 included in the first matrix.

[0129] However, in the direct-type BLU 2300, if necessary, the arrangement structures and intervals of the first matrix and the second matrix may be different from each other to improve brightness uniformity and light efficiency. In addition to the method of arranging the plurality of light sources 2305, the distances S1 and S2 between adjacent light sources 2305 may be optimized to ensure brightness uniformity. As described above, when the rows and columns of the light sources 2305 are not arranged in a straight line but in a zigzag shape, the number of light sources 2305 of the same emission area may be reduced by about 15% to about 25%.

[0130] Fig.18 is a diagram of a direct-type BLU including an LED package according to example embodiments.

[0131] Specifically, the direct-type BLU 2400 may include a light source 2405 mounted on a circuit board 2401 and at least one optical sheet 2406 located above the light source 2405. The light source 2405 may be a white LED containing a red phosphor. In some embodiments, the direct-type BLU 2400 may be a module in which the light source 2405 is mounted on the circuit board 2401. Each of the light sources 2405 may be any one of the LED packages 10 to 13, 20 to 22, 30, and 40 according to the above-described embodiments.

[0132] The circuit board 2401 used in the current embodiment may have a first plane unit 2401a corresponding to the main area, an inclined unit 2401b that may be located around the first plane unit 2401a and at least some of its parts are bent, and a second plane unit 2401c located outside the inclined unit 2401b at the corner of the circuit board 2401. The light source 2405 may be arranged on the first plane unit 2401a and spaced apart from each other by a first distance d1. At least one light source 2405 may be arranged on the inclined unit 2401b and spaced apart from each other by a second distance d2. The first distance d1 may be equal to the second distance d2. The width (or length in one section) of the inclined unit 2401b may be less than the width of the first plane unit 2401a and greater than the width of the second plane unit 2401c. In addition, at least one light source 2405 may be arranged on the second plane unit 2401c as needed.

[0133] The inclination angle of the inclination unit 2401b may be appropriately controlled within a small range between 0° and 90° relative to the first plane unit 2401a. Since the circuit board 2401 has the above structure, even the edge portion of the optical sheet 2406 may maintain uniform brightness.

[0134] Figures 19 to 21 are diagrams of BLUs 2500 , 2600 , and 2700 including LED packages according to example embodiments.

[0135] Specifically, the wavelength conversion units 2550, 2650, and 2750 may not be located in the light sources 2505, 2605, and 2705, but may be located in the BLUs 2500, 2600, and 2700 outside the light sources 2505, 2605, and 2705 and convert light. Each of the light sources 2505, 2605, and 2705 may be any one of the LED packages 10 to 13, 20 to 22, 30, and 40 according to the above-described embodiments.

[0136] As a direct-lit BLU Fig.19 The BLU 2500 may include a wavelength conversion unit 2550, a light source module 2510 arranged below the wavelength conversion unit 2550, and a bottom case 2560 configured to contain the light source module 2510. In addition, the light source module 2510 may include a PCB 2501 and a plurality of light sources 2505 mounted on a top surface of the PCB 2501.

[0137] In the BLU 2500, the wavelength conversion unit 2550 may be located on the bottom housing 2560. Therefore, the wavelength of at least a portion of the light emitted by the light source module 2510 may be converted by the wavelength conversion unit 2550. Although the wavelength conversion unit 2550 may be prepared and applied as an additional film, the wavelength conversion unit 2550 may be integrally combined and provided with a light diffusion plate (not shown).

[0138] As a side-entry BLU Fig. 20 and Fig.21 The BLUs 2600 and 2700 may include wavelength conversion units 2650 and 2750, LGPs 2640 and 2740, reflection units 2620 and 2720 located at one of the sides of the LGPs 2640 and 2740, and light sources 2605 and 2705, respectively. Light emitted from the light sources 2605 and 2705 may be guided into the LGPs 2640 and 2740, respectively, by the reflection units 2620 and 2720. Fig. 20 In the BLU 2600, the wavelength conversion unit 2650 may be located between the LGP 2640 and the light source 2605. Fig.21In the BLU 2700 , the wavelength conversion unit 2750 may be located on a light emitting surface of the LGP 2740 .

[0139] The wavelength conversion units 2550, 2650, and 2750 may include a typical phosphor. Specifically, the wavelength conversion units 2550, 2650, and 2750 may use a quantum dot phosphor to compensate for the characteristics of the quantum dot that is susceptible to heat or moisture from the light source.

[0140] Fig. 22 is a schematic exploded perspective view of a display device 3000 including an LED package according to example embodiments.

[0141] Specifically, the display device 3000 may include a BLU 3100, an optical sheet 3200, and an image display panel (e.g., a liquid crystal (LC) panel) 3300. The BLU 3100 may include a bottom housing 3110, a reflective plate 3120, an LGP 3140, and a light source module 3130 disposed on at least one side surface of the LGP 3140. The light source module 3130 may include a PCB 3131 and a light source 3132.

[0142] Specifically, the light source 3132 may be a side-emitting LED mounted on a side surface adjacent to the light emitting surface. Each of the light sources 3132 may be any one of the LED packages 10 to 13, 20 to 22, 30, and 40 according to the above-described embodiments. Each of the light sources 3132 may include various sheets, such as a sheet, a prism sheet, or a protective sheet.

[0143] The image display panel 3300 may display an image using light emitted from the optical sheet 3200. The image display panel 3300 may include an array substrate 3320, a liquid crystal (LC) layer 3330, and a color filter substrate 3340. The array substrate 3320 may include pixel electrodes arranged in a matrix shape, thin film transistors (TFTs) configured to apply a driving voltage to the pixel electrodes, and signal lines configured to operate the TFTs.

[0144] The color filter substrate 3340 may include a transparent substrate, a color filter, and a common electrode. The color filter may include a filter configured to selectively pass light having a specific wavelength in the white light emitted by the BLU 3100. The LC layer 3330 may be rearranged due to an electric field formed between the pixel electrode and the common electrode to control the transmittance. The light whose transmittance is controlled may be transmitted through the color filter of the color filter substrate 3340 and display an image. The image display panel 3300 may also include a driver circuit unit configured to process an image signal.

[0145] Since the display device 3000 of the current embodiment uses the light source 3132 configured to emit blue, green, and red light with relatively small full width at half maximum (FWHM), blue, green, and red colors with high color purity can be achieved after the emitted light passes through the color filter substrate 3340.

[0146] Fig.23 is a schematic perspective view of a flat panel lighting device 4100 including an LED package according to example embodiments.

[0147] Specifically, the flat panel lighting device 4100 may include a light source module 4110, a power supply device 4120, and a housing 4130. The light source module 4110 may include an LED array as a light source. The light source module 4110 may include any one of the LED packages 10 to 13, 20 to 22, 30, and 40 according to the above-described embodiments as a light source. The power supply device 4120 may include an LED driver.

[0148] The light source module 4110 may include an LED array and form a substantially planar shape. The LED array may include LEDs and a controller configured to store driving information about the LEDs.

[0149] The power supply device 4120 may be configured to supply power to the light source module 4110. The housing 4130 may have an accommodation space for accommodating the light source module 4110 and the power supply device 4120 therein. Although the housing 4130 has a hexahedral shape with an open side surface, the inventive concept is not limited thereto. The light source module 4110 may be arranged to emit light toward the open side surface of the housing 4130.

[0150] Fig.24 is a schematic exploded perspective view of a lighting device 4200 including an LED package according to example embodiments.

[0151] Specifically, the lighting device 4200 may include a socket 4210, a power unit 4220, a heat dissipation unit 4230, a light source module 4240, and an optical unit 4250. The light source module 4240 may include an LED array, and the power unit 4220 may include an LED driver.

[0152] The socket 4210 may be configured to be replaceable by a lighting device of the prior art. Power may be applied to the lighting device 4200 through the socket 4210. Fig.24As shown, a first power unit 4221 and a second power unit 4222 separated from each other may be assembled in the power unit 4220. The heat dissipation unit 4230 may include an internal heat dissipation unit 4231 and an external heat dissipation unit 4232. The internal heat dissipation unit 4231 may be directly connected to the light source module 4240 and / or the power unit 4220, and transfer heat to the external heat dissipation unit 4232 through the light source module 4240 and / or the power unit 4220. The optical unit 4250 may include an internal optical unit (not shown) and an external optical unit (not shown), and is configured to uniformly disperse the light emitted by the light source module 4240.

[0153] The light source module 4240 may receive power from the power unit 4220 and emit light to the optical unit 4250. The light source module 4240 may include at least one LED package 4241, a circuit substrate 4242, and a controller 4243, and the controller 4243 may store driving information about the LED package 4241. The LED package 4241 may include any one of the LED packages 10 to 13, 20 to 22, 30, and 40 according to the above-described embodiments.

[0154] Fig.25 is a schematic exploded perspective view of a lighting device 4300 including an LED package according to example embodiments.

[0155] Specifically, in addition to the reflection plate 4310 and the communication module 4320 disposed on the reflection plate 4310, the lighting device 4300 according to the current embodiment may be connected with Fig.24 The lighting device 4200 shown is the same. The reflective plate 4310 can allow the light from the light source to be evenly distributed laterally and downwardly and reduce glare.

[0156] The communication module 4320 may be mounted on the reflective plate 4310, and home network communication may be achieved through the communication module 4320. For example, the communication module 4320 may be a wireless communication module using Zigbee, WiFi, or LiFi. The communication module 4320 may control lighting devices installed inside and outside the home (e.g., on / off and brightness control of the lighting devices) using a smart phone or a wireless controller. In addition, a LiFi communication module using a visible wavelength of lighting devices installed inside and outside the home may control electronic products and automotive systems inside and outside the home, such as TVs, refrigerators, air conditioners, door locks, and cars.

[0157] The reflective plate 4310 and the communication module 4320 may be covered by the cover unit 4330 .

[0158] Fig.26 is a schematic exploded perspective view of a pole-type lighting device 4400 including an LED package according to example embodiments.

[0159] Specifically, the pole-type lighting device 4400 may include a heat dissipation member 4401, a cover 4427, a light source module 4421, a first socket 4405, and a second socket 4423. A plurality of heat dissipation fins 4409 and 4410 may be formed in a concave-convex shape on the inner surface and / or outer surface of the heat dissipation member 4401. The heat dissipation fins 4409 and 4410 may be designed to have various shapes at various intervals. The support 4413 may be formed in a protruding shape in the heat dissipation member 4401. The light source module 4421 may be fixed to the support 4413. The fasteners 4411 may be formed at both ends of the heat dissipation member 4401.

[0160] A fastener groove 4429 may be formed at the cover 4427. The fastener 4411 of the heat dissipation member 4401 may be hooked into the fastener groove 4429. The positions of the fastener groove 4429 and the fastener 4411 may be interchanged.

[0161] The light source module 4421 may include an LED array. The light source module 4421 may include a PCB 4419, a light source 4417, and a controller 4415. The controller 4415 may store driving information about the light source 4417. A circuit interconnection portion configured to operate the light source 4417 may be formed on the PCB 4419. In addition, the light source module 4421 may include an element configured to operate the light source 4417. The light source 4417 may be any one of the LED packages 10 to 13, 20 to 22, 30, and 40 according to the above-described embodiments.

[0162] The first socket 4405 and the second socket 4423 as a pair of sockets may be coupled to both ends of a cylindrical cover unit including a heat dissipation member 4401 and a cover 4427. For example, the first socket 4405 may include an electrode terminal 4403 and a power device 4407, and a dummy terminal 4425 may be located at the second socket 4423. In addition, an optical sensor and / or a communication module may be embedded in any one of the first socket 4405 and the second socket 4423. In some embodiments, the optical sensor and / or the communication module may be embedded in the second socket 4423 where the dummy terminal 4425 is arranged. In other embodiments, the optical sensor and / or the communication module may be embedded in the first socket 4405 where the electrode terminal 4403 is arranged.

[0163] Although the exemplary embodiments of the present invention have been described with reference to the accompanying drawings, it should be understood by those skilled in the art that the present invention may be implemented in other specific forms without departing from the spirit and scope defined in the appended claims. It should be understood that the above embodiments are non-restrictive but illustrative in all aspects.

Claims

1. A light emitting diode package, comprising: a light emitting diode having an upper surface, a lower surface, and a side surface connecting the upper surface and the lower surface, and configured to generate and emit light, the light emitting diode having a polygonal shape in a plan view of the light emitting diode package; a light-transmitting layer covering an upper surface of the light-emitting diode and at least some portions of a side surface of the light-emitting diode and configured to direct light emitted from the light-emitting diode in an upward direction; a wavelength conversion layer disposed on the light-transmitting layer and configured to change the wavelength of light emitted through the light-transmitting layer; as well as a coating layer covering a side surface of the light-transmitting layer and configured to reflect light emitted through the light-transmitting layer in an upward direction at an interface with the light-transmitting layer, Wherein, in the cross-sectional view of the light emitting diode package, the side surface of the light-transmitting layer is inclined relative to the side surface of the light emitting diode, and Among them, in the plan view of the light-emitting diode package, the length from a first point of the light-transmitting layer corresponding to the vertex of the light-emitting diode to a second point of the light-transmitting layer corresponding to one end of the extension line of the diagonal of the light-emitting diode is greater than or equal to the length from the first point to a third point of the light-transmitting layer corresponding to one end of the extension line of the side of the light-emitting diode.

2. The light emitting diode package according to claim 1, wherein: In a plan view of the light emitting diode package, the light transmitting layer has a polygonal shape corresponding to a polygonal shape of the light emitting diode and having a size larger than that of the light emitting diode.

3. The light emitting diode package according to claim 1, wherein: The light emitting diode comprises a light emitting structure and a light-transmitting substrate forming an interface with the light-transmitting layer, and The light-transmitting substrate includes at least one of sapphire (Al2O3), gallium nitride (GaN), germanium (Ge), gallium arsenide (GaAs), zinc oxide (ZnO), silicon germanium (SiGe), silicon carbide (SiC), gallium oxide (Ga2O3), lithium gallium oxide (LiGaO2), lithium aluminum oxide (LiAlO2) and magnesium aluminum oxide (MgAl2O4), and Wherein, the light-transmitting layer comprises silicone resin.

4. The light emitting diode package according to claim 1, wherein: The light emitting diode includes a light emitting structure and a light-transmitting substrate having an interface formed with the light-transmitting layer, and Wherein, the refractive index of the light-transmitting substrate is greater than the refractive index of the light-transmitting layer.

5. The light emitting diode package according to claim 1, wherein: In the plan view, the size of the light-transmitting layer is larger than the size of the light-emitting diode, and Wherein, the size of the wavelength conversion layer is larger than the size of the light-transmitting layer.

6. The light emitting diode package according to claim 1, further comprising an interlayer serving as a buffer layer between the light-transmitting layer and the wavelength conversion layer. in, The refractive index of the interlayer is greater than that of the wavelength conversion layer and less than that of the light-transmitting layer.

7. The light emitting diode package according to claim 1, wherein: The thickness of the coating layer is greater than the thickness of the light-transmitting layer.

8. The light emitting diode package according to claim 7, wherein: The thickness of the light-transmitting layer is in the range of 100 μm to 350 μm, and the thickness of the coating layer is in the range of 150 μm to 500 μm.

9. The light emitting diode package according to claim 1, wherein: The coating layer includes at least one selected from the group consisting of SiO2, MgF2, SiN, TiO2 and Nb2O5.

10. The light emitting diode package according to claim 1, wherein: A side surface of the wavelength conversion layer and a side surface of the coating layer are coplanar.

11. The light emitting diode package according to claim 1, wherein: The light emitting diode comprises a light emitting structure, a light-transmitting substrate and an electrode pad arranged thereon, The light emitting structure includes a semiconductor layer of a first conductivity type, a semiconductor layer of a second conductivity type and an active layer therebetween, and The light-transmitting layer covers the entire side surface of the light-emitting structure and the light-transmitting substrate.

12. The light emitting diode package according to claim 11, wherein: The coating layer covers the entire side surface of the light-transmitting layer and at least some portions of the side surface of the electrode pad, and the entire side surface of the light-transmitting layer forms an interface between the light-transmitting layer and the coating layer.

13. The light emitting diode package according to claim 12, further comprising an electrode coating covering at least some portions of the side surface of the electrode pad, in, The light-transmitting layer covers at least some portions of the side surfaces of the electrode coating layer.

14. A light emitting diode package, comprising: a light emitting diode having an upper surface, a lower surface, and a side surface connecting the upper surface and the lower surface, and configured to generate and emit light; a light-transmitting layer covering an upper surface and a side surface of the light-emitting diode and configured to direct light emitted from the light-emitting diode in an upward direction; a wavelength conversion layer disposed on the light-transmitting layer and configured to change the wavelength of light emitted through the light-transmitting layer; as well as a coating layer covering a side surface of the light-transmitting layer and configured to reflect light emitted through the light-transmitting layer in an upward direction at an interface with the light-transmitting layer, wherein, in a plan view of the light emitting diode package, the light emitting diode has a polygonal shape, and the light-transmitting layer has a corresponding polygonal shape, and In which, in the cross-sectional view of the light-emitting diode package, the side surface of the light-transmitting layer is inclined relative to the side surface of the light-emitting diode, and the angle formed by connecting the edges of two adjacent side surfaces of the light-transmitting layer and the corresponding edges of the light-emitting diode is greater than or equal to the angle formed by the side surface of the light-transmitting layer and the corresponding side surface of the light-emitting diode.

15. The light emitting diode package according to claim 14, wherein: The light emitting diode includes a light emitting structure and a light-transmitting substrate having an interface formed with the light-transmitting layer, The light-transmitting substrate includes at least one of sapphire (Al2O3), gallium nitride (GaN), germanium (Ge), gallium arsenide (GaAs), zinc oxide (ZnO), silicon germanium (SiGe), silicon carbide (SiC), gallium oxide (Ga2O3), lithium gallium oxide (LiGaO2), lithium aluminum oxide (LiAlO2) and magnesium aluminum oxide (MgAl2O4), and Wherein, the light-transmitting layer comprises silicone resin.

16. The light emitting diode package according to claim 15, wherein: The coating layer includes at least one selected from the group consisting of SiO2, MgF2, SiN, TiO2 and Nb2O5.

17. The light emitting diode package according to claim 14, wherein: The light emitting diode includes a light emitting structure and a light-transmitting substrate having an interface formed with the light-transmitting layer, and Wherein, the refractive index of the light-transmitting substrate is greater than the refractive index of the light-transmitting layer.

18. A light emitting diode package, comprising: a light emitting diode having an upper surface, a lower surface, and a side surface connecting the upper surface and the lower surface, and configured to generate and emit light; a light-transmitting layer covering the upper surface and side surfaces of the light-emitting diode; a wavelength conversion layer disposed on the light-transmitting layer and configured to change the wavelength of light emitted through the light-transmitting layer; as well as a coating layer covering a side surface of the light-transmitting layer and configured to reflect light emitted through the light-transmitting layer in an upward direction, wherein, in a plan view of the light emitting diode package, the light emitting diode has a polygonal shape, and the light-transmitting layer has a corresponding polygonal shape, and a length from a first point of the light-transmitting layer corresponding to a vertex of the light emitting diode to a second point of the light-transmitting layer corresponding to one end of an extension line of a diagonal line of the light emitting diode is greater than or equal to a length from the first point to a third point of the light-transmitting layer corresponding to one end of an extension line of a side of the light emitting diode, and In which, in the cross-sectional view of the light-emitting diode package, the side surface of the light-transmitting layer is inclined relative to the side surface of the light-emitting diode, and the angle formed by connecting the edges of two adjacent side surfaces of the light-transmitting layer and the corresponding edges of the light-emitting diode is greater than or equal to the angle formed by the side surface of the light-transmitting layer and the corresponding side surface of the light-emitting diode.

19. The light emitting diode package according to claim 18, wherein: The light emitting diode comprises a light emitting structure, a light-transmitting substrate and an electrode pad arranged thereon, The light emitting structure includes a semiconductor layer of a first conductivity type, a semiconductor layer of a second conductivity type and an active layer therebetween, and The light-transmitting layer covers the entire side surface of the light-emitting structure and the light-transmitting substrate.

20. The light emitting diode package according to claim 19, wherein: The coating layer covers the entire side surface of the light-transmitting layer and at least some portions of the side surface of the electrode pad, and the entire side surface of the light-transmitting layer forms an interface between the light-transmitting layer and the coating layer.

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