Showerheads and substrate handling equipment

Abstract

A showerhead according to an embodiment of the inventive concept includes: an upper plate having a plurality of gas supply channels, a lower plate having a plurality of supply holes and a plurality of exhaust grooves formed in a lower surface, and a plurality of partition walls between the upper plate and the lower plate, the plurality of partition walls being connected to the plurality of exhaust grooves and defining exhaust channels opened at sides of the showerhead.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims the priority of Korean Patent Application No. 10-2018-0046148 filed on April 20, 2018 in the Korean Intellectual Property Office, the disclosure of which is incorporated herein in its entirety by reference. Technical Field

[0003] The inventive concept relates to a showerhead and a substrate processing apparatus. Background Art

[0004] A substrate processing device for processing a substrate such as a semiconductor wafer using plasma is used in a semiconductor manufacturing process. In the substrate processing device, processing operations such as an etching process and a deposition process can be performed using plasma. To this end, the substrate processing device may include a showerhead for supplying a process gas. In recent semiconductor manufacturing processes, substrates such as semiconductor wafers have become larger, and the importance of process uniformity of processing operations in the substrate has increased. Summary of the invention

[0005] Example embodiments of the inventive concepts are to provide a shower head and a substrate processing apparatus in which uniformity of wafers in a processing operation is improved.

[0006] According to an exemplary embodiment of the present inventive concept, a shower head includes: an upper plate including a plurality of gas supply channels; a lower plate including a plurality of supply holes and a plurality of exhaust grooves defined or formed in a lower surface; and a plurality of partition walls between the upper plate and the lower plate, the plurality of partition walls defining exhaust channels opened at sides of the shower head.

[0007] According to an exemplary embodiment of the present inventive concept, a shower head includes: an upper plate, which includes a plurality of gas supply channels; a lower plate, which includes a plurality of supply holes and a plurality of exhaust grooves defined or formed in a lower surface of the lower plate; and a plurality of partition walls, the plurality of partition walls are located between the upper plate and the lower plate and are vertically aligned with the plurality of gas supply channels, the plurality of partition walls define exhaust channels opened at the side of the shower head; wherein the plurality of partition walls may include a plurality of vertical supply passages, the plurality of vertical supply passages are fluidly connected to the plurality of gas supply channels of the upper plate and the plurality of supply holes of the lower plate; and wherein the total area of ​​the plurality of exhaust grooves on the lower surface of the lower plate may be greater than the total area of ​​the plurality of supply holes on the lower surface of the lower plate.

[0008] According to an example embodiment of the inventive concept, a substrate processing apparatus includes: a plasma processing chamber; a susceptor located in the plasma processing chamber and configured to support a substrate; a showerhead located above the susceptor and configured to supply a process gas from a lower surface of the showerhead and to exhaust residual gas through a side of the showerhead; and a plasma confinement portion located between the susceptor and the showerhead and defining a plasma confinement region. In this case, the showerhead may include an upper plate having a plurality of gas supply channels, a lower plate having a plurality of supply holes and a plurality of exhaust grooves, and a plurality of partition walls between the upper plate and the lower plate, the plurality of partition walls defining a plurality of exhaust channels opened at a side of the showerhead and fluidly connected to the plurality of exhaust grooves; wherein each of the plurality of partition walls may include a plurality of vertical supply passages, the plurality of vertical supply passages being fluidly connected to the plurality of gas supply channels of the upper plate and the plurality of supply holes of the lower plate. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] The above and other aspects, features and advantages of the present disclosure will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings, in which:

[0010] Figure 1 is a view schematically illustrating a substrate processing apparatus according to an exemplary embodiment of the present inventive concept;

[0011] Figure 2 is a perspective view illustrating a shower head according to an exemplary embodiment of the present inventive concept;

[0012] Figure 3 and Figure 4 It is shown Figure 2 A perspective view of a portion of a sprinkler head;

[0013] Figure 5 is along Figure 4 A cross-sectional view taken along line II-II′;

[0014] Figure 6 is a view showing a lower surface of a shower head according to an exemplary embodiment of the present inventive concept;

[0015] Figure 7 is a view showing a baffle that may be mounted on a shower head according to an exemplary embodiment of the present inventive concept;

[0016] Figure 8 is a perspective view illustrating a shower head according to an exemplary embodiment of the present inventive concept;

[0017] Fig. 9 and Fig.10 It is shown Figure 8 A perspective view of a portion of a sprinkler head;

[0018] Fig.11 is a view showing an exhaust hole and a horizontal supply path of a shower head according to an exemplary embodiment of the present inventive concept;

[0019] Fig.12 is a view illustrating a supply hole and an exhaust groove of a shower head according to an exemplary embodiment of the present inventive concept; and

[0020] Fig.13 is a view illustrating a baffle that may be mounted on a shower head according to an exemplary embodiment of the present inventive concept. DETAILED DESCRIPTION

[0021] Hereinafter, exemplary embodiments of the inventive concept will be described with reference to the accompanying drawings.As used herein, the expression "and / or" includes any and all combinations of one or more of the associated listed items.

[0022] Figure 1 is a view schematically illustrating a substrate processing apparatus according to an exemplary embodiment of the inventive concept.

[0023] Reference Figure 1 , a substrate processing apparatus 100 according to an exemplary embodiment may include a shower head 110 , an upper heater 120 , a susceptor 133 , and an electrostatic chuck 137 , which are located in a plasma processing chamber and surrounded by a chamber wall 140 .

[0024] The electrostatic chuck 137 may be disposed on an upper portion of the susceptor 133, and the substrate W may be located on the upper portion of the electrostatic chuck 137. The substrate W may be or include a semiconductor wafer.

[0025] The shower head 110 may be disposed to face the electrostatic chuck 137 with a predetermined gap therebetween. The shower head 110 may be disposed to serve as an upper electrode, and the electrostatic chuck 137 may be disposed to serve as a lower electrode.

[0026] The C-shaped shield 115 may be disposed between the showerhead 110 and the pedestal 133, and may be connected to the showerhead 110 and the pedestal 133 to provide or define a plasma confinement region. The C-shaped shield 115 may be referred to as a plasma confinement portion.

[0027] The showerhead 110 may supply a process gas (eg, an etching gas) to the plasma confinement region and exhaust residual gas from the plasma confinement region. The residual gas may include free radicals, neutral atoms, etching byproducts, and the like.

[0028] In this exemplary embodiment, the C-shaped shield 115 may not have an opening to prevent the process gas, plasma or residual gas from being exhausted through the lower portion of the C-shaped shield 115. The C-shaped shield 115 may be grounded. Alternatively, exhaust flowing through the showerhead 110 to the plasma processing chamber may be performed. The exhausted residual gas may be finally exhausted to the outside through an exhaust port located in the lower portion of the plasma processing chamber.

[0029] The gas source 125 may be connected to the showerhead 110 by or through a gas supply line, and may supply a process gas (eg, an etching gas) to the plasma confinement region.

[0030] The bias RF source 173 , the first excitation RF source 175 , and the second excitation RF source 177 may be electrically connected to the susceptor 133 by or via the controller 160 to provide RF power.

[0031] The upper temperature controller 183 may independently control the temperature of the upper heater 120. The lower temperature controller 181 may independently control the temperature of the electrostatic chuck 137.

[0032] The vacuum pump 150 may exhaust residual gas exhausted to the side of the shower head 110 through the exhaust passage in the shower head 110 to the outside through the exhaust port located in the lower portion of the chamber wall 140. In addition, the vacuum pump 150 may control the pressure in the plasma processing chamber.

[0033] The controller 160 may be connected or operably connected to the gas source 125, the bias RF source 173, the first excitation RF source 175, the second excitation RF source 177, the lower temperature controller 181, the upper temperature controller 183, and the vacuum pump 150. The controller 160 may control the inflow of etching gas into the plasma confinement region, the generation of RF power, the temperature of the showerhead and the substrate, the pressure of the chamber, etc.

[0034] Figure 2 is a perspective view illustrating a shower head according to an exemplary embodiment of the present inventive concept.

[0035] Reference Figure 2 , the shower head 110 may include an upper plate 220 , a lower plate 240 , and a partition wall 230 . The partition wall 230 may be disposed between the upper plate 220 and the lower plate 240 , and may contact the upper plate 220 and the lower plate 240 .

[0036] The gas supply hole 210 may be formed at the center of the upper plate 220 and connected (eg, fluidly connected or communicated) to a gas supply line or pipe for supplying a process gas. Figure 2 , one gas supply hole 210 is shown, but the inventive concept is not limited thereto. A plurality of gas supply holes 210 may be formed in the upper plate 220. For example, Figure 3 The main gas supply channel 223 forms three gas supply holes 210 .

[0037] A plurality of partition walls 230 may be arranged along a first direction and may be arranged at regular intervals (e.g., at equal intervals or constant intervals) in a second direction intersecting or perpendicular to the first direction. The space between the partition walls 230 may be provided as or define a first exhaust channel 231 along the first direction, the first exhaust channel 231 leading to the side of the shower head 110 or opening at the side of the shower head 110. Each partition wall 230 may have partition wall holes 235 spaced from each other at regular intervals or spacings (e.g., at equal intervals or constant intervals). The partition wall holes 235 of adjacent partition walls 230 may overlap or align with each other. The partition wall holes 235 may be arranged in a plurality of rows along the second direction. The overlapping partition wall holes 235 may be provided in or define a second exhaust channel 236 along the second direction, the second exhaust channel 236 leading to the side of the shower head 110 or opening at the side of the shower head 110. In one exemplary embodiment, the partition walls 230 may not have the partition wall holes 235. Since the partition walls 230 are arranged at regular intervals or pitches (eg, at equal intervals or constant intervals) in the second direction, the showerhead 110 may have high thermal uniformity.

[0038] The upper plate 220 may include a first upper plate 221 and a second upper plate 222, and the lower plate 240 may include a first lower plate 241 and a second lower plate 242. The first lower plate 241 may include an exhaust hole 244. The exhaust hole 244 may be arranged in an area between the partition walls 230 and may be connected (e.g., fluidly connected or communicated) to the first exhaust channel and the second exhaust channel. The plurality of exhaust holes 244 may be regularly arranged at a first interval or spacing along a first direction, and may be regularly arranged at a second interval or spacing along a second direction (e.g., perpendicular to the first direction).

[0039] Figure 3 and Figure 4 It is shown Figure 2 A perspective view of a portion of a sprinkler head.

[0040] Figure 3 is along Figure 2 2 is a perspective view taken along line II′ in FIG. 2 , and the second upper plate 222 is shown in a removed state. Figure 4 yes Figure 3 Perspective view of the "A" area of ​​. Figure 5 is along Figure 4 A cross-sectional view taken along line II-II′.

[0041] See together Figure 3 , 45, the upper plate 220 may include a first upper plate 221 and a second upper plate 222. The first upper plate 221 may include a main gas supply channel or a first gas supply channel 223 extending in a second direction and a sub-gas supply channel or a second gas supply channel 225 extending from the main gas supply channel 223 in a first direction, and a plurality of sub-gas supply channels or second gas supply channels 225 are regularly spaced apart from each other (e.g., at equal intervals or constant intervals) in a second direction (the first direction and the second direction may be perpendicular to each other). The sub-gas supply channel 225 may be arranged at a position overlapping or aligned with the partition wall 230. A vertical supply passage 227 extending vertically from the sub-gas supply channel 225 may be formed (e.g., in the partition wall 230). The vertical supply passage 227 may pass through the partition wall 230 and extend to the lower plate 240. The vertical supply passage 227 may be arranged between the partition wall holes 235 at regular intervals (e.g., at equal intervals or constant intervals) and may not be connected to the partition wall 230 or the partition wall holes 235.

[0042] The vertical supply passage 227 may be connected (e.g., fluidly connected or communicated) to a horizontal supply passage 246 disposed in the lower plate 240 and extending in the first direction. The horizontal supply passage 246 may be formed on a lower surface of the first lower plate 241 and may be covered or closed by the second lower plate 242. The horizontal supply passage 246 may be disposed at a position overlapping or aligned with the partition wall 230.

[0043] The horizontal supply passage 246 may be connected (e.g., fluidly connected or communicated) to the supply hole 247 through the second lower plate 242. The supply hole 247 may pass through the second lower plate 242 perpendicularly to the lower surface of the second lower plate 242. In an exemplary embodiment, the supply hole 247 may pass through the second lower plate 242 at an angle that is skewed or inclined relative to the lower surface of the second lower plate 242.

[0044] The first lower plate 241 may include an exhaust hole 244, and the second lower plate 242 may include an exhaust groove or exhaust slit 245 connected to (e.g., fluidly connected or communicated with) the exhaust hole 244. As shown, three exhaust grooves 245 may be provided for each exhaust hole 244. In other exemplary embodiments, less than three, or four, or more exhaust grooves 245 may be provided for each exhaust hole 244. In one embodiment, the exhaust hole 244 may be connected (e.g., fluidly connected or communicated) to the first exhaust channel 231 and the second exhaust channel 236 provided by the partition wall 230. The exhaust groove 245 may pass through the second lower plate 242 perpendicular to the lower surface of the second lower plate 242. In an exemplary embodiment, the exhaust groove 245 may pass through the second lower plate 242 at an angle that is deflected or inclined relative to the lower surface of the second lower plate 242.

[0045] Figure 6is a view illustrating a lower surface of a shower head according to an exemplary embodiment of the present inventive concept.

[0046] Reference Figure 6 , the supply holes 247 and the exhaust grooves 245 may be regularly (e.g., at equal intervals or constant intervals) arranged on the lower surface of the lower plate 240, for example, on the lower surface of the second lower plate 242. Three exhaust grooves 245 may constitute a first repeating unit, and two supply holes 247 may constitute a second repeating unit. The first repeating unit and the second repeating unit may be arranged alternately in the first direction. In the second direction, the first repeating unit may be repeatedly arranged at regular intervals (e.g., at equal intervals or constant intervals), and the second repeating unit may be repeatedly arranged at regular intervals (e.g., at equal intervals or constant intervals). In an exemplary embodiment, a single exhaust groove 245 may constitute the first repeating unit, or two exhaust grooves 245 may constitute the first repeating unit. In an exemplary embodiment, four or more exhaust grooves 245 may constitute the first repeating unit. The total area (e.g., total flow area or total cross-sectional area) of the exhaust grooves 245 may be greater than the total area (e.g., total flow area or total cross-sectional area) of the supply holes 247.

[0047] Reference Figure 6 24, the horizontal supply passage 246 may include a first horizontal supply passage 246a extending in a first direction, and a second horizontal supply passage 246b (or a plurality of second horizontal supply passages 246b) extending in a second direction from the first horizontal supply passage 246a. The second horizontal supply passage 246b may be disposed on or extend from both side surfaces of the first horizontal supply passage 246a, and may be perpendicular to the first horizontal supply passage 246a. The second horizontal supply passage 246b may extend between the exhaust holes 244. The second horizontal supply passage 246b may have a length shorter than that of the first horizontal supply passage 246a.

[0048] The three exhaust grooves 245 may be arranged to overlap or align with one exhaust hole 244. The supply hole 247 may be arranged to overlap or align with the second horizontal supply passage 246b of the horizontal supply passage 246.

[0049] When etching a layer on a substrate W using the substrate processing apparatus 100 of the present invention, an etching gas may be supplied from the lower surface of the shower head 110 to the plasma confinement region through the main gas supply channel 223, the sub-gas supply channel 225, the vertical supply passage 227, the horizontal supply passage 246, and the supply hole 247. The supplied etching gas may form plasma, and the layer on the substrate W may be etched by positive ions (etching ions) of the plasma. For example, the layer to be etched may be a stacked structure in which silicon oxide layers and silicon nitride layers are alternately stacked.

[0050] Meanwhile, residual gas including plasma radicals, neutral atoms, etching byproducts, and the like may be exhausted from the side of the shower head 110 to the plasma processing chamber through the exhaust slit 245, the exhaust hole 244, and the exhaust channel in the shower head 110. The exhausted residual gas may be exhausted through the exhaust port 145 (refer to FIG. Figure 1 ) and are discharged to the outside.

[0051] Conventionally, an opening may be formed in the lower portion of the C-shaped cover to allow residual gas to flow out through the lower portion of the C-shaped cover. In this case, the residual gas may flow horizontally in the plasma confinement region and may be exhausted through the opening. The horizontal flow of the residual gas may affect the vertical movement of the etching ions. For example, the horizontal movement component of the etching ions may be increased. Due to the horizontal flow of the residual gas, the intra-wafer uniformity of the etching process may be deteriorated.

[0052] In an exemplary embodiment of the present inventive concept, residual gas, such as radicals and neutral atoms, may not flow horizontally in the plasma confinement region but may be reintroduced into the showerhead 110 in a vertical direction and then exhausted from a side of the showerhead 110 to the plasma processing chamber.

[0053] Therefore, the shower head 110 according to example embodiments may suppress the horizontal flow of residual gas, thereby improving the in-wafer uniformity of the etching process.

[0054] Figure 7 is a view illustrating a baffle that may be mounted on a shower head according to an exemplary embodiment of the present inventive concept.

[0055] Reference Figure 7 , the shower head 110 may further include a baffle 260 having baffle holes 262 arranged at regular intervals (e.g., at equal intervals or constant intervals). The baffle 260 may be inserted between the partition walls 230, and may be arranged so that the baffle holes 262 are not aligned or aligned with the exhaust grooves 245. The baffle 260 may be inserted between the partition walls 230 while maintaining a predetermined distance from the upper surface of the first lower plate 241. The baffle 260 may have different lengths depending on the position where they are inserted. The baffle 260 may be inserted to prevent or reduce secondary discharge from occurring in the exhaust channel of the shower head 100.

[0056] Figure 8 is a perspective view illustrating a shower head according to an exemplary embodiment of the present inventive concept.

[0057] Reference Figure 8The shower head 110A may include an upper plate 220 , a lower plate 240 , and a partition wall 230 ′. The partition wall 230 ′ may be disposed between the upper plate 220 and the lower plate 240 , and may contact the upper plate 220 and the lower plate 240 .

[0058] The gas supply hole 210 may be formed at the center of the upper plate 220 and may be connected or communicated to a gas supply line or pipe for supplying process gas. The upper plate 220 may include a gas supply channel 225' arranged radially and connected (e.g., fluidly connected or communicated) to the gas supply hole 210. The gas supply channels 225' may be arranged at regular angles (e.g., at equal or constant angles). The angle between the gas supply channels 225' may be 60 degrees. In an exemplary embodiment, the angle between the gas supply channels 225' may be, for example, 15 degrees, 30 degrees, 45 degrees, 90 degrees, etc.

[0059] The partition wall 230' may include a first partition wall 230a and a second partition wall 230b, each of which is arranged radially. The partition wall 230' may extend radially outward from the central portion of each of the upper plate 220 and the lower plate 240. The second partition wall 230b may be arranged between the first partition wall 230a and may have a length shorter than the first partition wall 230a. In one embodiment, two or more second partition walls 230b may be arranged between the first partition wall 230a. The second partition wall 230b may not contact the first partition wall 230a. In an exemplary embodiment, the second partition wall 230b may have the same length as the first partition wall 230a and may contact the first partition wall 230a. The partition walls 230' may be arranged at regular angles (e.g., at equal or constant angles). The angle between the partition walls 230' may be 60 degrees. In an exemplary embodiment, the angle between the partition walls 230' may be, for example, 15 degrees, 30 degrees, 45 degrees, 90 degrees, etc. The partition walls 230' may be disposed at positions overlapping or aligned with the gas supply channels 225' Since the partition walls 230' are disposed at regular angles (eg, at equal or constant angles), the showerhead 110A may have high thermal uniformity.

[0060] The space between the partition walls 230' may be provided as an exhaust passage 231' that opens to or at the side of the shower head 110A. The lower plate 240 may include a first lower plate 241 and a second lower plate 242. The first lower plate 241 may include exhaust holes 244'. The exhaust holes 244' may be arranged in the area between the partition walls 230' and may be connected (e.g., fluidly connected or communicated) to the exhaust passage 231'. The exhaust holes 244' may be arranged at regular intervals (e.g., at equal intervals or constant intervals) on or along a plurality of concentric circles (e.g., the exhaust holes 244' may be arranged concentrically).

[0061] Fig. 9 and Fig.10 It is shown Figure 8 A perspective view of a portion of a sprinkler head.

[0062] Reference Fig. 9 and Fig.10 , the gas supply channel 225′ may be arranged at a position overlapping or aligned with the partition wall 230′. A vertical supply passage 227′ may be formed to extend vertically from the gas supply channel 225′. The vertical supply passage 227′ may pass through the partition wall 230′ and extend to the lower plate 240. The vertical supply passage 227′ may be arranged at regular intervals (e.g., at equal intervals or constant intervals) along the partition wall 230′.

[0063] The vertical supply passage 227' may be connected (e.g., fluidly connected or communicated) to a horizontal supply passage 246' disposed in the lower plate 240. The horizontal supply passage 246' may be formed on a lower surface of the first lower plate 241 and covered or closed by the second lower plate 242. The horizontal supply passage 246' may include a portion overlapping or aligned with the partition wall 230'.

[0064] The horizontal supply passage 246′ may be connected (e.g., fluidly connected or communicated) to a supply hole 247′ penetrating the second lower plate 242. The supply hole 247′ may pass through the second lower plate 242 perpendicularly to the lower surface of the second lower plate 242. In an exemplary embodiment, the supply hole 247′ may pass through the second lower plate 242 at an angle that is skewed or inclined relative to the lower surface of the second lower plate 242.

[0065] The first lower plate 241 may include an exhaust hole 244′, and the second lower plate 242 may include an exhaust groove 245′ connected to (or fluidly connected or communicated with) the exhaust hole 244′. As shown, two exhaust grooves 245′ may be provided for each exhaust hole 244′. In an exemplary embodiment, 1 or 3 or more exhaust grooves 245′ may be provided for each exhaust hole 244′. The exhaust hole 244′ may be connected (e.g., fluidly connected or communicated) to an exhaust channel 231′ provided by the partition wall 230′. The exhaust groove 245′ may pass through the second lower plate 242 perpendicular to the lower surface of the second lower plate 242. In one embodiment, the exhaust groove 245′ may pass through the second lower plate 242 at an angle that is deflected or inclined relative to the lower surface of the second lower plate 242.

[0066] Fig.11 is a view illustrating an exhaust hole and a horizontal supply path of a shower head according to an exemplary embodiment of the present inventive concept. Fig.11 A lower surface of a first lower plate 241 among the lower plates 240 of the shower head 110A may be shown.

[0067] Reference Fig.11 , the first lower plate 241 may include an exhaust hole 244' and a horizontal supply path 246'. The exhaust hole 244' may pass through the first lower plate 241, and the horizontal supply path 246' may be formed on the lower surface of the first lower plate 241. The horizontal supply path 246' may be a groove having a predetermined depth.

[0068] The exhaust holes 244' may be arranged at regular intervals (e.g., at equal intervals or constant intervals) on or along concentric circles, and may extend in a circumferential direction along the concentric circles (e.g., the exhaust holes 244' may be arranged concentrically). The horizontal supply passage 246' may include a radially arranged first horizontal supply passage 246a' and a second horizontal supply passage 246b' extending from the first horizontal supply passage 246a', the second horizontal supply passage 246b' being arranged at regular intervals (e.g., the second horizontal supply passage 246b' may be arranged concentrically, such as concentrically arranged at equal intervals or constant intervals) on or along concentric circles. The second horizontal supply passage 246b' may extend between the exhaust holes 244'. The horizontal supply passage 246' or the second horizontal supply passage 246b' may be connected (e.g., fluidly connected or communicated) to the first horizontal supply passage 246a'.

[0069] Fig.12 is a view illustrating a supply hole and an exhaust groove of a shower head according to an exemplary embodiment of the present inventive concept. Fig.12 A lower surface of the second lower plate 242 among the lower plates 240 of the showerhead 110A is shown.

[0070] Reference Fig.12 , the second lower plate 242 may include an exhaust slit 245 ′ and a supply hole 247 ′. The exhaust slit 245 ′ and the supply hole 247 ′ may pass through the second lower plate 242 .

[0071] The exhaust slits 245' and the supply holes 247' may be arranged at regular intervals (e.g., at equal intervals or constant intervals) on or along concentric circles, and may be arranged alternately in the radial direction (e.g., the exhaust slits 245' and the supply holes 247' may be arranged concentrically, such as concentrically at equal intervals or constant intervals).

[0072] The exhaust slits 245' may be arranged at regular intervals (e.g., at equal intervals or constant intervals) on or along the concentric circles and extend in the circumferential direction along the concentric circles. Fig.11 The exhaust holes 244' in the embodiment may overlap or align. A pair of exhaust slits 245' may be provided for each exhaust hole 244', but the inventive concept is not limited thereto.

[0073] The supply holes 247' may be arranged at regular intervals (e.g., at equal intervals or constant intervals) on or along concentric circles. The supply holes 247' may be arranged at regular intervals (e.g., at equal intervals or constant intervals) in the circumferential direction. The supply holes 247' may be arranged to Fig.11 The horizontal supply passages 246' overlap or align.

[0074] The total area (eg, total flow area or total cross-sectional area) of the exhaust slots 245' may be greater than the total area (eg, total flow area or total cross-sectional area) of the supply holes 247'.

[0075] The shower head 110A according to an embodiment may suppress the horizontal flow of residual gas, thereby improving the in-wafer uniformity of the etching process.

[0076] Fig.13 is a view illustrating a baffle that may be mounted on a shower head according to an embodiment of the inventive concept.

[0077] Reference Fig.13 , the shower head 100A may further include a baffle 260′ having baffle holes 262′, which are arranged at regular intervals or spacings (for example, at equal intervals or constant intervals) on or along concentric circles. The baffle 260′ may be inserted between the partition walls 230′ and may be arranged so that the baffle holes 262′ are inconsistent or misaligned with the exhaust grooves 245′. The baffle holes 262′ may have different lengths. The baffle 260′ may be inserted between the partition walls 230′ while maintaining a predetermined distance from the upper surface of the first lower plate 241. The baffle 260′ may have a fan-shaped shape. The baffle 260′ may be inserted between the partition walls 230′ to prevent or reduce secondary discharge from occurring in the exhaust channel of the shower head 100A.

[0078] According to embodiments of the inventive concept, a shower head and a substrate processing apparatus may be provided in which uniformity among wafers in a processing operation is improved.

[0079] Various and advantageous advantages and effects of the inventive concept are not limited to the above description, and the above advantages and effects can be more easily understood in the course of describing specific embodiments of the inventive concept.

[0080] While exemplary embodiments have been shown and described above, it will be apparent to those skilled in the art that modifications and variations may be made without departing from the scope of the inventive concept as defined by the appended claims.

Claims

1. A shower head used in a substrate processing device, the shower head include: an upper plate including a plurality of gas supply channels; a lower plate including a plurality of supply holes and a plurality of exhaust slots defined in a lower surface of the lower plate; as well as a plurality of partition walls, the plurality of partition walls being located between the upper plate and the lower plate and defining an exhaust passage opening at a side of the shower head, Each of the plurality of partition walls includes a plurality of partition wall holes arranged at regular intervals, and the plurality of partition wall holes of adjacent partition walls among the plurality of partition walls are aligned with each other. 2 . The showerhead of claim 1 , wherein the plurality of partition walls include a plurality of vertical supply passages fluidly connected to the plurality of gas supply channels of the upper plate and the plurality of supply holes of the lower plate.

3. The shower head according to claim 2, in, The lower plate includes a first lower plate and a second lower plate, the first lower plate including a plurality of first horizontal supply passages and a plurality of second horizontal supply passages connected to the plurality of first horizontal supply passages, the plurality of first horizontal supply passages are vertically aligned with the plurality of partition walls and connected to the plurality of vertical supply passages, the second lower plate covers the lower surface of the first lower plate and has the plurality of supply holes extending therethrough, wherein the plurality of supply holes are connected to the plurality of second horizontal supply passages.

4. The shower head according to claim 1, in, The plurality of partition walls extend in parallel with each other in the first direction and are spaced apart from each other at regular intervals.

5. The shower head according to claim 4, in, The plurality of supply holes and the plurality of exhaust grooves are alternately arranged on the lower plate in a first direction, and each of the plurality of supply holes and the plurality of exhaust grooves is repeatedly arranged on the lower plate in a second direction perpendicular to the first direction.

6. The shower head according to claim 1, in, A total area of ​​the plurality of exhaust slots on the lower plate is greater than a total area of ​​the plurality of supply holes on the lower plate. 7 . The showerhead of claim 1 , further comprising a plurality of baffles inserted between the plurality of partition walls and comprising a plurality of baffle holes offset from the plurality of exhaust slots.

8. A shower head used in a substrate processing device, the shower head include: an upper plate including a plurality of gas supply channels; a lower plate including a plurality of supply holes and a plurality of exhaust slots defined in a lower surface of the lower plate; as well as a plurality of partition walls, the plurality of partition walls being located between the upper plate and the lower plate and defining an exhaust passage opening at a side of the shower head, The plurality of partition walls include a plurality of first partition walls and a plurality of second partition walls extending radially outward from a central portion of each of the upper plate and the lower plate, and wherein each of the plurality of second partition walls is located between a pair of first partition walls among the plurality of first partition walls, and each of the plurality of second partition walls has a length shorter than a length of each of the plurality of first partition walls.

9. The shower head according to claim 8, in, Each of the plurality of supply holes and the plurality of exhaust grooves is arranged at regular intervals along a plurality of concentric circles on the lower plate and is alternately arranged in a radial direction on the lower plate.

10. A shower head used in a substrate processing device, the shower head include: an upper plate including a plurality of gas supply channels; a lower plate including a plurality of supply holes and a plurality of exhaust slots defined in a lower surface of the lower plate; as well as a plurality of partition walls, the plurality of partition walls being located between the upper plate and the lower plate and vertically aligned with the plurality of gas supply channels, the plurality of partition walls defining exhaust channels opening at the sides of the showerhead; wherein the plurality of partition walls include a plurality of vertical supply passages fluidly connected to the plurality of gas supply channels of the upper plate and the plurality of supply holes of the lower plate; wherein a total area of ​​the plurality of exhaust slots on the lower surface of the lower plate is greater than a total area of ​​the plurality of supply holes on the lower surface of the lower plate; and Each of the plurality of partition walls includes a plurality of partition wall holes arranged at regular intervals, and the plurality of partition wall holes of adjacent partition walls among the plurality of partition walls are aligned with each other.

11. The shower head according to claim 10, in, The plurality of partition walls extend in parallel with each other in the first direction and are spaced apart from each other at regular intervals.

12. The shower head according to claim 11, in, The plurality of supply holes and the plurality of exhaust grooves are alternately arranged on the lower surface of the lower plate in a first direction, and each of the plurality of supply holes and the plurality of exhaust grooves is repeatedly arranged on the lower surface of the lower plate in a second direction perpendicular to the first direction.

13. A shower head used in a substrate processing device, the shower head include: an upper plate including a plurality of gas supply channels; a lower plate including a plurality of supply holes and a plurality of exhaust slots defined in a lower surface of the lower plate; as well as a plurality of partition walls, the plurality of partition walls being located between the upper plate and the lower plate and vertically aligned with the plurality of gas supply channels, the plurality of partition walls defining exhaust channels opening at the sides of the showerhead; wherein the plurality of partition walls include a plurality of vertical supply passages fluidly connected to the plurality of gas supply channels of the upper plate and the plurality of supply holes of the lower plate; wherein a total area of ​​the plurality of exhaust slots on the lower surface of the lower plate is greater than a total area of ​​the plurality of supply holes on the lower surface of the lower plate; and wherein the plurality of partition walls include a plurality of first partition walls and a plurality of second partition walls extending radially outward from a central portion of each of the upper plate and the lower plate, wherein the plurality of first partition walls and the plurality of second partition walls are alternately arranged in a circumferential direction, and wherein a length of each of the plurality of second partition walls is shorter than a length of each of the plurality of first partition walls.

14. The shower head according to claim 13, in, The plurality of supply holes and the plurality of exhaust grooves are arranged at regular intervals along a plurality of concentric circles on the lower surface of the lower plate and are alternately arranged in a radial direction on the lower surface of the lower plate.

15. A substrate processing device, include: Plasma processing chamber; a susceptor positioned in the plasma processing chamber and configured to support a substrate; a showerhead located above the susceptor and configured to supply process gas from a lower surface of the showerhead and to exhaust residual gas through a side of the showerhead; as well as a plasma confinement portion disposed between the susceptor and the showerhead and defining a plasma confinement region; The showerhead comprises an upper plate having a plurality of gas supply channels, a lower plate having a plurality of supply holes and a plurality of exhaust slots, and a plurality of partition walls between the upper plate and the lower plate, the plurality of partition walls defining a plurality of exhaust channels opening at the side of the showerhead and in fluid communication with the plurality of exhaust slots; wherein each of the plurality of partition walls comprises a plurality of vertical supply passages fluidly connected to the plurality of gas supply channels of the upper plate and the plurality of supply holes of the lower plate; Each of the plurality of partition walls includes a plurality of partition wall holes arranged at regular intervals, and the plurality of partition wall holes of adjacent partition walls among the plurality of partition walls are aligned with each other.

16. The substrate processing apparatus according to claim 15, in, The plurality of partition walls extend in parallel with each other in the first direction and are spaced apart from each other at regular intervals.

17. The substrate processing apparatus according to claim 16, in, The plurality of partition wall holes of adjacent partition walls among the plurality of partition walls are aligned with each other in a second direction perpendicular to the first direction.

18. A substrate processing device, include: Plasma processing chamber; a susceptor positioned in the plasma processing chamber and configured to support a substrate; a showerhead located above the susceptor and configured to supply process gas from a lower surface of the showerhead and to exhaust residual gas through a side of the showerhead; as well as a plasma confinement portion disposed between the susceptor and the showerhead and defining a plasma confinement region; The showerhead comprises an upper plate having a plurality of gas supply channels, a lower plate having a plurality of supply holes and a plurality of exhaust slots, and a plurality of partition walls between the upper plate and the lower plate, the plurality of partition walls defining a plurality of exhaust channels opening at the side of the showerhead and in fluid communication with the plurality of exhaust slots; wherein each of the plurality of partition walls comprises a plurality of vertical supply passages fluidly connected to the plurality of gas supply channels of the upper plate and the plurality of supply holes of the lower plate; and wherein the plurality of partition walls include a plurality of first partition walls and a plurality of second partition walls extending radially outward from a central portion of each of the upper plate and the lower plate, wherein the plurality of first partition walls and the plurality of second partition walls are alternately arranged in a circumferential direction, and wherein a length of each of the plurality of second partition walls is shorter than a length of each of the plurality of first partition walls.

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