IPM over-temperature protection circuit, module and system for flywheel energy storage device

Abstract

The present invention relates to the technical field of IPM protection circuits, and specifically to an IPM over-temperature protection circuit, module and system for a flywheel energy storage device. The IPM over-temperature protection system is suitable for 1500V subway tracks and 200KW flywheel energy storage devices. The IPM over-temperature protection system includes: an IPM over-temperature protection module, a signal generating module, an IPM module and a line driving module. The line driving module is respectively connected to the IPM module, the signal generating module and the IPM over-temperature protection module. The signal generating module generates and outputs a first pulse signal and a second pulse signal. The line driving module controls whether the first pulse signal and the second pulse signal are transmitted to the IPM module according to the over-temperature protection signal output by the IPM over-temperature protection module. In the above manner, when the IPM module is overheated, the pulse signal is blocked from continuing to be transmitted, so that it cannot be transmitted to the IPM module, thereby achieving the purpose of protecting the IPM module. Compared with the use of an MCU controller, the device structure is simplified, and the safety and accuracy of the system are improved.

Description

Technical Field

[0001] The present invention relates to the technical field of IPM protection circuits, and in particular to an IPM over-temperature protection circuit, module and system for a flywheel energy storage device. Background Art

[0002] IPM (Intelligent Power Module) is an advanced new power switching device, which has the advantages of high current density, low saturation voltage and high voltage resistance of GTR (high power transistor), and the advantages of high input impedance, high switching frequency and low driving power of MOSFET (field effect transistor). IPM integrates logic, control, detection and protection circuits, is easy to use and has a wide range of applications. It not only reduces the size and development time of the system, but also greatly enhances the reliability of the system. It adapts to the development direction of today's power devices, such as modularization, compounding and power integrated circuits (PIC), and has received more and more attention in the field of power electronics.

[0003] As an important part of the control system, IPM should pay special attention to the handling and protection of abnormal working status of IPM during use. However, the current protection circuit practices are to sample the DC bus voltage, temperature and current signals inside the IPM module and transmit them to the main controller MCU. By programming the MCU, the sampled data is compared and analyzed to determine whether the circuit has overcurrent and overtemperature. If overcurrent and overtemperature occur, the MCU sends a blocking signal. This method requires a combination of software and hardware, which increases the difficulty and workload of development, and the price of MCU is higher than that of other electronic components, which increases the cost.

[0004] In view of this, overcoming the above defects in the prior art and providing a new IPM over-temperature protection circuit, module and system for a flywheel energy storage device has become a technical problem to be solved urgently in the art. Summary of the invention

[0005] The object of the present invention is to provide an IPM over-temperature protection circuit, module and system for a flywheel energy storage device in view of the above-mentioned defects in the prior art.

[0006] The purpose of the present invention can be achieved by the following technical measures:

[0007] An embodiment of the present invention provides an IPM over-temperature protection circuit for a flywheel energy storage device, wherein the IPM over-temperature protection circuit is connected to an IPM module, wherein a first IGBT component and a second IGBT component are provided in the IPM module, wherein a first temperature sensor is provided on the first IGBT component, wherein a second temperature sensor is provided on the second IGBT component, wherein the first temperature sensor is used to collect the temperature of the first IGBT component, wherein the second temperature sensor is used to collect the temperature of the second IGBT component, wherein the IPM over-temperature protection circuit comprises: a signal input circuit module, a signal comparison circuit module, and a signal output circuit module connected in sequence;

[0008] The signal input circuit module includes a first comparison chip, a first voltage divider circuit and a second voltage divider circuit, one end of the first voltage divider circuit is connected to the first temperature sensor, the other end of the first voltage divider circuit is connected to the negative input end of the first comparison chip, one end of the second voltage divider circuit is connected to the second temperature sensor, the other end of the second voltage divider circuit is connected to the positive input end of the first comparison chip, the output end of the first comparison chip is connected to the signal comparison circuit module, the first voltage divider circuit outputs a first voltage value corresponding to the temperature of the first IGBT component, the second voltage divider circuit outputs a second voltage value corresponding to the temperature of the second IGBT component, the first comparison chip collects and compares the first voltage value and the second voltage value, takes the smaller voltage value of the first voltage value and the second voltage value as the input voltage value, and transmits it to the signal comparison circuit module;

[0009] The signal comparison circuit module compares the input voltage value with a preset voltage value, and the signal output circuit module outputs an over-temperature protection signal according to the comparison result of the signal comparison circuit module.

[0010] According to one embodiment of the present invention, the signal input circuit module also includes an analog switch arranged at the output end of the first comparison chip, and the analog switch includes a signal input end connected to the output end of the first comparison chip, a signal output end connected to the signal comparison circuit module, a first input end connected between the negative input end of the first comparison chip and the first voltage divider circuit, and a second input end connected between the positive input end of the first comparison chip and the second voltage divider circuit.

[0011] According to one embodiment of the present invention, the first voltage divider circuit includes a first resistor and a second resistor, one end of the first resistor, one end of the second resistor and the negative input end of the first comparison chip are interconnected, the other end of the first resistor is connected to the first temperature sensor, and the other end of the second resistor is connected to the reference voltage generator.

[0012] According to one embodiment of the present invention, the second voltage divider circuit includes a third resistor and a fourth resistor, one end of the third resistor, one end of the fourth resistor and the positive input terminal of the first comparison chip are interconnected, the other end of the third resistor is connected to the second temperature sensor, and the other end of the fourth resistor is connected to the reference voltage generator.

[0013] According to one embodiment of the present invention, the signal comparison circuit module includes a second comparison chip and an adjustment circuit, the positive input terminal of the second comparison chip is connected to the adjustment circuit, the negative input terminal of the second comparison chip is connected to the signal output terminal, the output terminal of the second comparison chip is connected to the signal output circuit module, and the second comparison chip compares the input voltage value with the preset voltage value output by the adjustment circuit, and outputs the comparison result to the signal output circuit module.

[0014] According to one embodiment of the present invention, the adjustment circuit includes a fifth resistor and a sixth resistor, the positive input terminal of the second comparison chip is interconnected with one end of the fifth resistor and one end of the sixth resistor, the other end of the fifth resistor is grounded, and the other end of the sixth resistor is connected to the reference voltage generator.

[0015] According to an embodiment of the present invention, the signal output circuit module includes two NOT gate chips connected in series.

[0016] An embodiment of the present invention provides an IPM over-temperature protection module for a flywheel energy storage device. The IPM over-temperature protection module includes the IPM over-temperature protection circuit.

[0017] An embodiment of the present invention provides an IPM over-temperature protection system for a flywheel energy storage device, the IPM over-temperature protection system comprising: the IPM over-temperature protection module, a signal generating module and a line driving module, the line driving module being respectively connected to the IPM module, the signal generating module and the IPM over-temperature protection module, the signal generating module being used to generate and output a first pulse signal and a second pulse signal, when the over-temperature protection signal output by the IPM over-temperature protection module is in a low level state, the line driving module controls the first pulse signal and the second pulse signal to pass through and be transmitted to the IPM module, and when the over-temperature protection signal output by the IPM over-temperature protection module is in a high level state, the line driving module controls blocking the first pulse signal and the second pulse signal from being transmitted to the IPM module.

[0018] According to one embodiment of the present invention, the line driving module includes a signal input pin, an enable pin and a signal output pin, the enable pin is connected to the IPM over-temperature protection module, the input pin is connected to the signal generating module, and the output pin is connected to the IPM module. When the over-temperature protection signal is in a low level state, the first pulse signal and the second pulse signal are transmitted to the IPM module through the enable pin. When the over-temperature protection signal is in a high level state, the enable pin blocks the first pulse signal and the second pulse signal from being transmitted to the IPM module.

[0019] The IPM over-temperature protection circuit, module and system for a flywheel energy storage device of the present invention are all composed of hardware. Compared with a system combining software and hardware, the safety and accuracy of the system are improved, and the efficiency of information processing is also significantly improved. Through the above-mentioned method, when the temperature of the IGBT component is overheated, the pulse signal is blocked from continuing to be transmitted, so that it cannot be transmitted to the IPM module, thereby achieving the purpose of protecting the IGBT component. The line drive module acts as a switch, and the over-temperature protection signal is output to the line drive module. The first pulse signal and the second pulse signal are controlled to pass / block according to the level state of the over-temperature protection signal. Compared with the use of an MCU controller, the device structure is simplified, the peripheral circuits required by the MCU controller are reduced, and no software programming is required, thereby reducing the workload and development difficulty of system development. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 It is a structural schematic diagram of an IPM over-temperature protection circuit for a flywheel energy storage device of the present invention.

[0021] Figure 2 It is a structural schematic diagram of an IPM over-temperature protection system for a flywheel energy storage device of the present invention. DETAILED DESCRIPTION

[0022] In order to make the purpose, technical solution and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0023] Hereinafter, many aspects of the present invention will be better understood with reference to the accompanying drawings. The components in the accompanying drawings are not necessarily drawn to scale. Instead, emphasis is placed on clearly illustrating the components of the present invention. In addition, in several views of the accompanying drawings, the same reference numerals indicate corresponding parts.

[0024] As used herein, the words "exemplary" or "illustrative" mean used as an example, instance, or illustration. Any implementation described herein as "exemplary" or "illustrative" is not necessarily to be construed as preferred or advantageous over other implementations. All of the implementations described below are exemplary implementations, which are provided to enable those skilled in the art to make and use embodiments of the present disclosure and are not intended to limit the scope of the disclosure, which is defined by the claims. In other implementations, well-known features and methods are described in detail so as not to obscure the present invention. For the purposes of the description herein, the terms "upper," "lower," "left," "right," "front," "rear," "vertical," "horizontal," and their derivatives will be used interchangeably. Figure 1 The invention is directed to the invention of the present invention. Moreover, there is no intention to be bound by any express or implied theory given in the preceding technical field, background technology, summary of the invention or the detailed description below. It should also be understood that the specific devices and processes shown in the drawings and described in the following description are simple exemplary embodiments of the inventive concepts defined in the appended claims. Therefore, specific dimensions and other physical characteristics related to the embodiments disclosed herein should not be understood as limiting unless the claims explicitly state otherwise.

[0025] The present invention provides an IPM over-temperature protection circuit for a flywheel energy storage device. Figure 1 This is a schematic diagram of the IPM over-temperature protection circuit for flywheel energy storage devices. Figure 1 The IPM over-temperature protection circuit is connected to the IPM module 10. The IPM module 10 is provided with a first IGBT component (not shown in the figure) and a second IGBT component (not shown in the figure). The first IGBT component is provided with a first temperature sensor 20, and the second IGBT component is provided with a second temperature sensor 30. The first temperature sensor 20 is used to collect the temperature of the first IGBT component, and the second temperature sensor 30 is used to collect the temperature of the second IGBT component. The IPM over-temperature protection circuit includes: a signal input circuit module 40, a signal comparison circuit module 50 and a signal output circuit module 60 connected in sequence.

[0026] The signal input circuit module 40 includes a first comparison chip 401, a first voltage divider circuit 402 and a second voltage divider circuit 403. The first comparison chip 401 is grounded and connected to a reference voltage generator. One end of the first voltage divider circuit 402 is connected to the first temperature sensor 20, and the other end of the first voltage divider circuit 402 is connected to the negative input end of the first comparison chip 401. One end of the second voltage divider circuit 403 is connected to the second temperature sensor 30, and the other end of the second voltage divider circuit 403 is connected to the positive input end of the first comparison chip 401. The output end of the first comparison chip 401 is connected to the signal comparison circuit 403. The module 50 is connected, the first voltage divider circuit 402 outputs a first voltage value corresponding to the temperature of the first IGBT component, the second voltage divider circuit 403 outputs a second voltage value corresponding to the temperature of the second IGBT component, the first comparison chip 401 collects and compares the first voltage value and the second voltage value, takes the smaller voltage value of the first voltage value and the second voltage value as the input voltage value, and transmits it to the signal comparison circuit module 50; the signal comparison circuit module 50 compares the input voltage value with the preset voltage value, and the signal output circuit module 60 outputs an over-temperature protection signal according to the comparison result of the signal comparison circuit module 50.

[0027] In this embodiment, directly detecting the temperature of the IGBT component is equivalent to detecting the temperature of the IPM module 10, the first temperature sensor 20 and the second temperature sensor 30 are equivalent to thermistors, the voltage value at TP1 is a first voltage value, and the voltage value at TP2 is a second voltage value. When the temperature of the first IGBT component increases, the resistance of the first temperature sensor 20 decreases, and the voltage value at TP1 decreases as the resistance of the first temperature sensor 20 decreases, that is, the voltage value of TP1 is inversely proportional to the temperature of the first IGBT component; when the temperature of the second IGBT component increases, the resistance of the second temperature sensor 30 decreases, and the voltage value at TP2 decreases as the resistance of the second temperature sensor 30 decreases, that is, the voltage value of TP2 is inversely proportional to the temperature of the second IGBT component.

[0028] For further information, see Figure 1 The signal input circuit module 40 further includes an analog switch 404 disposed at the output end of the first comparison chip 401. The analog switch 404 includes a signal input end (i.e., Vin end) connected to the output end of the first comparison chip 401, a signal output end (i.e., OUT end) connected to the signal comparison circuit module 50, a first input end (i.e., NO end) connected between the negative input end of the first comparison chip 401 and the first voltage divider circuit 402, and a second input end (i.e., NC end) connected between the positive input end of the first comparison chip 401 and the second voltage divider circuit 403. The analog switch 404 further includes a ground end (i.e., GND end) and a power supply end (i.e., Vcc end) connected to the reference voltage generator.

[0029] In this embodiment, when the first voltage value is greater than the second voltage value, the first comparison chip 401 outputs a low level to the analog switch 404, and when the signal input end is in a low level state, the signal output end is connected to the second input end, and the second voltage value is passed as the input voltage value to the signal comparison circuit module 50; when the first voltage value is less than the second voltage value, the first comparison chip 401 outputs a high level to the analog switch 404, and when the signal input end is in a high level state, the signal output end is connected to the first input end, and the first voltage value is passed as the input voltage value to the signal comparison circuit module 50.

[0030] Furthermore, the first voltage divider circuit 402 includes a first resistor 4021 and a second resistor 4022, one end of the first resistor 4021, one end of the second resistor 4022 and the negative input end of the first comparison chip 401 are interconnected, the other end of the first resistor 4021 is connected to the first temperature sensor 20, and the other end of the second resistor 4022 is connected to the reference voltage generator.

[0031] Furthermore, the second voltage divider circuit 403 includes a third resistor 4031 and a fourth resistor 4032, one end of the third resistor 4031, one end of the fourth resistor 4032 and the positive input end of the first comparison chip 401 are interconnected, the other end of the third resistor 4031 is connected to the second temperature sensor 30, and the other end of the fourth resistor 4032 is connected to the reference voltage generator.

[0032] Further, the signal comparison circuit module 50 includes a second comparison chip 501 and an adjustment circuit 502, the second comparison chip 501 is grounded and connected to the reference voltage generator, the positive input terminal of the second comparison chip 501 is connected to the adjustment circuit 502, the negative input terminal of the second comparison chip 501 is connected to the signal output terminal, the output terminal of the second comparison chip 501 is connected to the signal output circuit module 60, and the second comparison chip 501 compares the input voltage value with the preset voltage value output by the adjustment circuit 502, and outputs the comparison result to the signal output circuit module 60. When the input voltage value is greater than or equal to the preset voltage value, the second comparison chip 501 outputs a low level to the signal output circuit module 60, and when the input voltage value is less than the preset voltage value, the second comparison chip 501 outputs a high level to the signal output circuit module 60.

[0033] Further, the adjustment circuit 502 includes a fifth resistor 5021 and a sixth resistor 5022, the positive input terminal of the second comparison chip 501 is interconnected with one end of the fifth resistor 5021 and one end of the sixth resistor 5022, the other end of the fifth resistor 5021 is grounded, and the other end of the sixth resistor 5022 is connected to the reference voltage generator. The adjustment circuit 502 adjusts the output voltage (voltage value at TP3) of the adjustment circuit 502 to the voltage value corresponding to the over-temperature (i.e., the preset voltage value) by adjusting the fifth resistor 5021 and the sixth resistor 5022.

[0034] Further, the signal output circuit module 60 includes two NOT gate chips 601 connected in series. The NOT gate chip 601 is used to enhance and stabilize the level signal. When the second comparison chip 501 outputs a low level to the signal output circuit module 60, the over-temperature protection signal output by the signal output circuit module 60 is an enhanced and stabilized low level, indicating that the signal is normal. When the second comparison chip 501 outputs a high level to the signal output circuit module 60, the over-temperature protection signal output by the signal output circuit module 60 is an enhanced and stabilized high level, indicating that the signal is abnormal.

[0035] An embodiment of the present invention provides an IPM over-temperature protection module for a flywheel energy storage device. The IPM over-temperature protection module includes the above-mentioned IPM over-temperature protection circuit. The IPM over-temperature protection circuit has been described in detail above and will not be repeated here.

[0036] An embodiment of the present invention provides an IPM over-temperature protection system for a flywheel energy storage device. The IPM over-temperature protection system is applicable to a 1500V subway track and a 200KW flywheel energy storage device. Figure 2 This is a schematic diagram of the IPM over-temperature protection system for flywheel energy storage devices. Figure 2 The IPM over-temperature protection system includes: the above-mentioned IPM over-temperature protection module 1, the signal generating module 2, the IPM module 3 and the line driving module 4. The line driving module 4 is respectively connected to the IPM module 3, the signal generating module 2 and the IPM over-temperature protection module 1. The signal generating module 2 is used to generate and output a first pulse signal and a second pulse signal. When the over-temperature protection signal output by the IPM over-temperature protection module 1 is in a low-level state, the line driving module 4 controls the first pulse signal and the second pulse signal to pass through and be transmitted to the IPM module 3. When the over-temperature protection signal output by the IPM over-temperature protection module 1 is in a high-level state, the line driving module 4 controls to block the first pulse signal and the second pulse signal from being transmitted to the IPM module 3.

[0037] Furthermore, the line driving module 4 includes a signal input pin, an enable pin and a signal output pin, the enable pin is connected to the IPM over-temperature protection module 1, the input pin is connected to the signal generating module 2, and the output pin is connected to the IPM module 3. When the over-temperature protection signal is in a low level state, the first pulse signal and the second pulse signal are transmitted to the IPM module 3 through the enable pin. When the over-temperature protection signal is in a high level state, the enable pin blocks the first pulse signal and the second pulse signal from being transmitted to the IPM module 3.

[0038] The IPM over-temperature protection circuit, module and system for the flywheel energy storage device of the present invention are all composed of hardware. Compared with the system combining software and hardware, the safety and accuracy of the system are improved, and the efficiency of information processing is also significantly improved. Through the above method, when the IPM module 3 is overheated, the pulse signal is blocked from continuing to be transmitted, so that it cannot be transmitted to the IPM module 3, so as to achieve the purpose of protecting the IGBT components on the IPM module 3. The line driver module 4 acts as a switch, and the over-temperature protection signal is output to the line driver module 4. The first pulse signal and the second pulse signal are controlled to pass / block according to the level state of the over-temperature protection signal. Compared with the use of an MCU controller, the device structure is simplified, the peripheral circuits required by the MCU controller are reduced, and no software programming is required, thereby reducing the workload and development difficulty of system development.

[0039] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. An IPM over-temperature protection circuit for a flywheel energy storage device, characterized in that: The IPM over-temperature protection circuit is connected to an IPM module, wherein a first IGBT component and a second IGBT component are provided in the IPM module, a first temperature sensor is provided on the first IGBT component, and a second temperature sensor is provided on the second IGBT component, wherein the first temperature sensor is used to collect the temperature of the first IGBT component, and the second temperature sensor is used to collect the temperature of the second IGBT component, and the IPM over-temperature protection circuit comprises: a signal input circuit module, a signal comparison circuit module and a signal output circuit module connected in sequence; The signal input circuit module includes a first comparison chip, a first voltage divider circuit and a second voltage divider circuit, one end of the first voltage divider circuit is connected to the first temperature sensor, the other end of the first voltage divider circuit is connected to the negative input end of the first comparison chip, one end of the second voltage divider circuit is connected to the second temperature sensor, the other end of the second voltage divider circuit is connected to the positive input end of the first comparison chip, the output end of the first comparison chip is connected to the signal comparison circuit module, the first voltage divider circuit outputs a first voltage value corresponding to the temperature of the first IGBT component, the second voltage divider circuit outputs a second voltage value corresponding to the temperature of the second IGBT component, the first comparison chip collects and compares the first voltage value and the second voltage value, takes the smaller voltage value of the first voltage value and the second voltage value as the input voltage value, and transmits it to the signal comparison circuit module; The signal comparison circuit module compares the input voltage value with a preset voltage value, and the signal output circuit module outputs an over-temperature protection signal according to the comparison result of the signal comparison circuit module.

2. The IPM over-temperature protection circuit according to claim 1, characterized in that: The signal input circuit module also includes an analog switch arranged at the output end of the first comparison chip, and the analog switch includes a signal input end connected to the output end of the first comparison chip, a signal output end connected to the signal comparison circuit module, a first input end connected between the negative input end of the first comparison chip and the first voltage divider circuit, and a second input end connected between the positive input end of the first comparison chip and the second voltage divider circuit.

3. The IPM over-temperature protection circuit according to claim 1, characterized in that: The first voltage divider circuit includes a first resistor and a second resistor, one end of the first resistor, one end of the second resistor and the negative input end of the first comparison chip are interconnected, the other end of the first resistor is connected to the first temperature sensor, and the other end of the second resistor is connected to the reference voltage generator.

4. The IPM over-temperature protection circuit according to claim 3, characterized in that: The second voltage divider circuit includes a third resistor and a fourth resistor, one end of the third resistor, one end of the fourth resistor and the positive input end of the first comparison chip are interconnected, the other end of the third resistor is connected to the second temperature sensor, and the other end of the fourth resistor is connected to the reference voltage generator.

5. The IPM over-temperature protection circuit according to claim 2, characterized in that: The signal comparison circuit module includes a second comparison chip and an adjustment circuit, the positive input terminal of the second comparison chip is connected to the adjustment circuit, the negative input terminal of the second comparison chip is connected to the signal output terminal, the output terminal of the second comparison chip is connected to the signal output circuit module, and the second comparison chip compares the input voltage value with the preset voltage value output by the adjustment circuit, and outputs the comparison result to the signal output circuit module.

6. The IPM over-temperature protection circuit according to claim 5, characterized in that: The adjustment circuit includes a fifth resistor and a sixth resistor. The positive input terminal of the second comparison chip is interconnected with one end of the fifth resistor and one end of the sixth resistor. The other end of the fifth resistor is grounded, and the other end of the sixth resistor is connected to a reference voltage generator.

7. The IPM over-temperature protection circuit according to claim 1, characterized in that: The signal output circuit module comprises two NOT gate chips connected in series.

8. An IPM over-temperature protection module for a flywheel energy storage device, characterized in that: The IPM over-temperature protection module comprises the IPM over-temperature protection circuit according to any one of claims 1 to 7.

9. An IPM over-temperature protection system for a flywheel energy storage device, characterized in that: The IPM over-temperature protection system includes: the IPM over-temperature protection module, signal generating module and line driving module as described in claim 8, the line driving module is respectively connected to the IPM module, the signal generating module and the IPM over-temperature protection module, the signal generating module is used to generate and output a first pulse signal and a second pulse signal, when the over-temperature protection signal output by the IPM over-temperature protection module is in a low-level state, the line driving module controls the first pulse signal and the second pulse signal to pass through and be transmitted to the IPM module, when the over-temperature protection signal output by the IPM over-temperature protection module is in a high-level state, the line driving module controls to block the first pulse signal and the second pulse signal from being transmitted to the IPM module.

10. The IPM over-temperature protection system according to claim 9, characterized in that: The line driving module includes a signal input pin, an enable pin and a signal output pin, the enable pin is connected to the IPM over-temperature protection module, the input pin is connected to the signal generating module, and the output pin is connected to the IPM module. When the over-temperature protection signal is in a low level state, the first pulse signal and the second pulse signal are transmitted to the IPM module through the enable pin. When the over-temperature protection signal is in a high level state, the enable pin blocks the first pulse signal and the second pulse signal from being transmitted to the IPM module.

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